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26th ARFTG Conference Digest最新文献

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Design of Transmission Line Filters 传输线滤波器的设计
Pub Date : 1985-12-01 DOI: 10.1109/ARFTG.1985.323640
J. Tippet
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引用次数: 0
Gunn Diode Pulse Thermal Resistance and Characterization Test System Gunn二极管脉冲热阻及特性测试系统
Pub Date : 1985-12-01 DOI: 10.1109/ARFTG.1985.323642
Y. Anand, R.P. Hoft
The thermal resistance test station provides a complete characterization of a GUNN diodes parameters. The output power, efficiency, frequency, power swept response, and thermal resistance measurements are made fast and accurately. The accuracy of present thermal resistance measurements of Ka-band GUNN diodes is ± 15%, better results are expected with the revised heating test. Measurement times of 2-3 minutes rather than 2-3 hours are required making it a production suitable method. The system expandability becomes apparent at the wafer level. The current versus voltage characteristics at ambient temperature may be able in distinguish between good and bad processed GaAs wafers. This will provide an obvious cost savings because inadequate wafers are withheld during processing or before packaging.
热阻测试站提供了GUNN二极管参数的完整表征。输出功率、效率、频率、功率扫描响应和热阻测量快速准确。目前ka波段GUNN二极管的热阻测量精度为±15%,修正后的加热测试有望获得更好的结果。测量时间为2-3分钟,而不是2-3小时,使其成为一种适合生产的方法。系统的可扩展性在晶圆级变得明显。环境温度下的电流与电压特性可以用来区分加工好的和不好的砷化镓晶圆。这将提供明显的成本节约,因为不充分的晶圆在加工过程中或包装前被扣留。
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引用次数: 0
Separation of Reflections for VSWR Measurements VSWR测量中的反射分离
Pub Date : 1985-12-01 DOI: 10.1109/ARFTG.1985.323652
W. Couper
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引用次数: 0
Programmable Microwave Toner System 可编程微波碳粉系统
Pub Date : 1985-12-01 DOI: 10.1109/ARFTG.1985.323658
J. Schepps, S. Perlow, Joseph E. Brown
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引用次数: 0
Reflection Residuals of Coaxial Connectors 同轴连接器的反射余量
Pub Date : 1900-01-01 DOI: 10.1109/arftg.1985.323645
A series of measurements were made on the coaxial connector interface using test fixtures which allow each element to be examined separately. The measurements were made in the time domain in a way that eliminated calibration subtraction of seams and other reflection causing mechanisms. Data is given on seams, slots, chamfers and pin gaps. The contribution of various sized internal chamfers of the female contact is plotted and found to cause a significant reflection as the pin gap becomes very small.
使用测试夹具对同轴连接器接口进行了一系列测量,测试夹具允许对每个元件进行单独检查。测量是在时域内进行的,消除了接缝的校准减法和其他引起反射的机制。数据给出了接缝,槽,倒角和销间隙。绘制了各种尺寸的母接触内部倒角的贡献,发现当引脚间隙变得非常小时,会引起显著的反射。
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引用次数: 0
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26th ARFTG Conference Digest
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