Pub Date : 2020-10-01DOI: 10.1109/radecs50773.2020.9857729
{"title":"The RADECS 2020 Awards","authors":"","doi":"10.1109/radecs50773.2020.9857729","DOIUrl":"https://doi.org/10.1109/radecs50773.2020.9857729","url":null,"abstract":"","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126562585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857687
F. Libano, P. Rech, J. Brunhaver
Through neutron beam experiments, we measure the radiation sensitivity of Xilinx's DPU, and discuss the trade-offs between performance, area, and reliability. Furthermore, we provide insights on the fault model of systolic arrays for matrix multiplication.
{"title":"On the Reliability of Xilinx's Deep Processing Unit and Systolic Arrays for Matrix Multiplication","authors":"F. Libano, P. Rech, J. Brunhaver","doi":"10.1109/RADECS50773.2020.9857687","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857687","url":null,"abstract":"Through neutron beam experiments, we measure the radiation sensitivity of Xilinx's DPU, and discuss the trade-offs between performance, area, and reliability. Furthermore, we provide insights on the fault model of systolic arrays for matrix multiplication.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132941257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857698
C. Weulersse, M. Mazurek, S. Morand, C. Binois, O. Crépel
The SEE radiation tolerance of power SiC devices from several manufacturers has been studied. Safe Operating Areas, as well as failure rates at aircraft altitudes, have been characterized through testing at ChipIr facility, in order to validate the common used derating value of 50%.
{"title":"Neutron sensitivity of high voltage SiC devices for avionics applications","authors":"C. Weulersse, M. Mazurek, S. Morand, C. Binois, O. Crépel","doi":"10.1109/RADECS50773.2020.9857698","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857698","url":null,"abstract":"The SEE radiation tolerance of power SiC devices from several manufacturers has been studied. Safe Operating Areas, as well as failure rates at aircraft altitudes, have been characterized through testing at ChipIr facility, in order to validate the common used derating value of 50%.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133074312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/radecs.2008.5782673
{"title":"Official Reviewers","authors":"","doi":"10.1109/radecs.2008.5782673","DOIUrl":"https://doi.org/10.1109/radecs.2008.5782673","url":null,"abstract":"","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122207617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857693
J. Devine, Eva Cano Gonzalez
This paper describes the board level testing of a linear power supply based on SiC Junction Barrier Schottky diodes and GaN Hybrid Drain embedded Gate Injection Tran-sistors in a 186 MeV proton beam to evaluate the potential sensitivity to SEEs. The GaN components of the power supply have been individually tested against cumulative radiation dam-age in passive mode (i.e. unbiased) up to a 1 MeV(Si) neutron equivalent fluence of $3.4times 10^{14}$ n/cnr2, It is planned for the lighting system to be in the off state during normal accelerator operation, however the potential consequences of accidental or inadvertent powering the lighting must also be understood. If tolerant to SEEs, the power supply can also be potentially used as a current-controlled power supply for other applications in harsh radiation environments. In this context, board level testing is used to rapidly confirm the radiation hardness and expected performance designed into the power supply. Boards were irradiated in a uniform field and no failures were observed on test devices up to the maximum fluence of $1.0times 10^{11}mathrm{p}/text{cm}^{2}$.
{"title":"Proton irradiation of GaN transistor based power supply operating in the linear region","authors":"J. Devine, Eva Cano Gonzalez","doi":"10.1109/RADECS50773.2020.9857693","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857693","url":null,"abstract":"This paper describes the board level testing of a linear power supply based on SiC Junction Barrier Schottky diodes and GaN Hybrid Drain embedded Gate Injection Tran-sistors in a 186 MeV proton beam to evaluate the potential sensitivity to SEEs. The GaN components of the power supply have been individually tested against cumulative radiation dam-age in passive mode (i.e. unbiased) up to a 1 MeV(Si) neutron equivalent fluence of $3.4times 10^{14}$ n/cnr2, It is planned for the lighting system to be in the off state during normal accelerator operation, however the potential consequences of accidental or inadvertent powering the lighting must also be understood. If tolerant to SEEs, the power supply can also be potentially used as a current-controlled power supply for other applications in harsh radiation environments. In this context, board level testing is used to rapidly confirm the radiation hardness and expected performance designed into the power supply. Boards were irradiated in a uniform field and no failures were observed on test devices up to the maximum fluence of $1.0times 10^{11}mathrm{p}/text{cm}^{2}$.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133152199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/radecs50773.2020.9857685
N. Chatry
{"title":"Technical Program Chair","authors":"N. Chatry","doi":"10.1109/radecs50773.2020.9857685","DOIUrl":"https://doi.org/10.1109/radecs50773.2020.9857685","url":null,"abstract":"","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"123 27","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131912682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857733
A. Sogoyan, A. Smolin, A. Chumakov
The paper presents an approach to single event rate calculation based on experimental data for a single LET value. This approach minimizes irradiation time while providing a conservative estimation of device's compliance with mission requirements.
{"title":"Single event rate estimation based on limited experimental data","authors":"A. Sogoyan, A. Smolin, A. Chumakov","doi":"10.1109/RADECS50773.2020.9857733","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857733","url":null,"abstract":"The paper presents an approach to single event rate calculation based on experimental data for a single LET value. This approach minimizes irradiation time while providing a conservative estimation of device's compliance with mission requirements.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131097043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857731
P. Martín-Holgado, M. Maestro-Izquierdo, M. B. González, Y. Morilla, F. Campabadal
The effect of gamma-ray irradiation on HfO2-based memristors is investigated. Extensive electrical characterization of their resistive switching performance and assessment of data retention under irradiation indicate that the devices are resilient to radiation damage.
{"title":"Total Ionizing Dose Effects on HfO2-based Memristors","authors":"P. Martín-Holgado, M. Maestro-Izquierdo, M. B. González, Y. Morilla, F. Campabadal","doi":"10.1109/RADECS50773.2020.9857731","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857731","url":null,"abstract":"The effect of gamma-ray irradiation on HfO2-based memristors is investigated. Extensive electrical characterization of their resistive switching performance and assessment of data retention under irradiation indicate that the devices are resilient to radiation damage.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121120685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857712
N. V. van Vonno, J. S. Gill, F. Ballou, H. Satterfield, L. Pearce, W. H. Newman
This paper reports the results of low and high dose rate total ionizing dose (TID) testing of the ISL 70005SEH dual output point of load converter, which combines a synchronous buck regulator and a low dropout voltage linear regulator. The test was conducted to characterise the part's total dose response and dose rate or bias sensitivity. We also performed biased high temperature anneals to evaluate time dependent effects.
{"title":"Total Dose Testing of the Renesas ISL70005SEH Hardened Dual Output Point of Load Regulator","authors":"N. V. van Vonno, J. S. Gill, F. Ballou, H. Satterfield, L. Pearce, W. H. Newman","doi":"10.1109/RADECS50773.2020.9857712","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857712","url":null,"abstract":"This paper reports the results of low and high dose rate total ionizing dose (TID) testing of the ISL 70005SEH dual output point of load converter, which combines a synchronous buck regulator and a low dropout voltage linear regulator. The test was conducted to characterise the part's total dose response and dose rate or bias sensitivity. We also performed biased high temperature anneals to evaluate time dependent effects.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124395096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857697
E. Syresin, A. Butenko, G. Filatov, A. Slivin, T. Kulevoy, Y. Titarenko, A. Titarenko, D. Bobrovsky, A. Chumakov, A. Pechenkin, A. Sogoyan, S. Soloviev, V. Saburov
Two sets of experimental equipment for IC's SEE test are under development based on NICA accelerator project. The first facility has 3.2 MeV/n energy and the second one has energy range 150…500 MeV/n. The project is being developed in collaboration with JINR, ITEP and SPELS/MEPhI.
{"title":"New Heavy Ion Facility Design Project for Single Event Effect Tests","authors":"E. Syresin, A. Butenko, G. Filatov, A. Slivin, T. Kulevoy, Y. Titarenko, A. Titarenko, D. Bobrovsky, A. Chumakov, A. Pechenkin, A. Sogoyan, S. Soloviev, V. Saburov","doi":"10.1109/RADECS50773.2020.9857697","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857697","url":null,"abstract":"Two sets of experimental equipment for IC's SEE test are under development based on NICA accelerator project. The first facility has 3.2 MeV/n energy and the second one has energy range 150…500 MeV/n. The project is being developed in collaboration with JINR, ITEP and SPELS/MEPhI.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128841023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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