Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857726
J. Guillermin, G. Augustin, N. Sukhaseum, N. Chatry, F. Bezerra, R. Ecoffet
In modern technologies, Single Event Upsets can be induced by Low Energy Protons. This phenomenon has been described in the literature for many years now, considering technology nodes lower than 90 nm. Few complete sets of data are available considering low-scale devices, to assess their sensitivity to the proton direct ionization phenomenon and determine the impact of the technology node. This study proposes to assess the in-orbit impact of the direct ionization phenomenon for devices of a technology node of 45 and 28 nm, fully SEU characterized. The importance of the mechanical environment for the prediction is also discussed, as well as the impact of the straggling effect.
{"title":"Contribution of the Proton Direct Ionization to the SEU rate for low-scale devices","authors":"J. Guillermin, G. Augustin, N. Sukhaseum, N. Chatry, F. Bezerra, R. Ecoffet","doi":"10.1109/RADECS50773.2020.9857726","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857726","url":null,"abstract":"In modern technologies, Single Event Upsets can be induced by Low Energy Protons. This phenomenon has been described in the literature for many years now, considering technology nodes lower than 90 nm. Few complete sets of data are available considering low-scale devices, to assess their sensitivity to the proton direct ionization phenomenon and determine the impact of the technology node. This study proposes to assess the in-orbit impact of the direct ionization phenomenon for devices of a technology node of 45 and 28 nm, fully SEU characterized. The importance of the mechanical environment for the prediction is also discussed, as well as the impact of the straggling effect.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116133812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857719
S. Azimi, C. De Sio, B. Du, L. Sterpone
We propose a workflow for the analysis and mitigation of 3D ICs to Single Event Transient by upsizing the sensitive transistors. The workflow is applied to a 45-nm 3D LUT and the results show a 37% reduction in failure rate.
{"title":"On the Mitigation of Single Event Transient in 3D LUT by In-Cell Layout Resizing","authors":"S. Azimi, C. De Sio, B. Du, L. Sterpone","doi":"10.1109/RADECS50773.2020.9857719","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857719","url":null,"abstract":"We propose a workflow for the analysis and mitigation of 3D ICs to Single Event Transient by upsizing the sensitive transistors. The workflow is applied to a 45-nm 3D LUT and the results show a 37% reduction in failure rate.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"296 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116411888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857715
C. Peng, Z. Lei, Zhangang Zhang, Yujuan He, Yun Huang, Y. En
A radiation hardening process of shallow trench isolation oxide is proposed for 130 nm PDSOI technology. The TID effect and high temperature annealing effect after irradiation are investigated for the PDSOI nMOSFET.
{"title":"Thermal Annealing of Total Ionizing Dose Effect for Partially-Depleted SOI MOSFET","authors":"C. Peng, Z. Lei, Zhangang Zhang, Yujuan He, Yun Huang, Y. En","doi":"10.1109/RADECS50773.2020.9857715","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857715","url":null,"abstract":"A radiation hardening process of shallow trench isolation oxide is proposed for 130 nm PDSOI technology. The TID effect and high temperature annealing effect after irradiation are investigated for the PDSOI nMOSFET.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131800217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857711
P. M. Basso, F. F. dos Santos, M. Brandalero, P. Rech
COTS GPUs include redundant resources as tensor-cores and approximate functional-units that can be leveraged for DWC. Using redundant hardware we detect an average of 74% errors with 0.1% time and 24% energy consumption overhead.
{"title":"On the Use of Redundant Resources in COTS Mixed-Precision GPUs for Efficient DWC","authors":"P. M. Basso, F. F. dos Santos, M. Brandalero, P. Rech","doi":"10.1109/RADECS50773.2020.9857711","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857711","url":null,"abstract":"COTS GPUs include redundant resources as tensor-cores and approximate functional-units that can be leveraged for DWC. Using redundant hardware we detect an average of 74% errors with 0.1% time and 24% energy consumption overhead.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115835569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857700
Jialei Wang, J. Prinzie, S. Thys, P. Leroux
This paper presents an analysis of the SEU (Single-Event Upset) cross section of a SRAM (Static Random-Access Memory) based radiation monitor under tilted irradiation angles. The monitor was processed in a 180 nm CMOS technology, and was designed as an ASIC (Application-Specified Integrated Circuit). The monitor was tested with a $mathbf{150}mathbf{GeV}/mathbf{u}$ UHE (Ultra-High Energy) Pb ions with a LET of 8.8 $mathbf{MeV}cdot mathbf{cm}^{2}/mathbf{mg}$, and standard heavy ions from 1.8-60 $mathbf{MeV}cdot mathbf{cm}^{2}/mathbf{mg}$. The comparison of SEU cross sections between UHE ions and standard heavy ions was discussed, and an analysis on different incident angles using geometry distribution was performed. A 2.5-D TCAD simulation was included to verify the geometry theory, the result showed good agreement.
{"title":"Angular dependency of SRAM SEU cross sections with Ultra-High Energy Pb beams","authors":"Jialei Wang, J. Prinzie, S. Thys, P. Leroux","doi":"10.1109/RADECS50773.2020.9857700","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857700","url":null,"abstract":"This paper presents an analysis of the SEU (Single-Event Upset) cross section of a SRAM (Static Random-Access Memory) based radiation monitor under tilted irradiation angles. The monitor was processed in a 180 nm CMOS technology, and was designed as an ASIC (Application-Specified Integrated Circuit). The monitor was tested with a $mathbf{150}mathbf{GeV}/mathbf{u}$ UHE (Ultra-High Energy) Pb ions with a LET of 8.8 $mathbf{MeV}cdot mathbf{cm}^{2}/mathbf{mg}$, and standard heavy ions from 1.8-60 $mathbf{MeV}cdot mathbf{cm}^{2}/mathbf{mg}$. The comparison of SEU cross sections between UHE ions and standard heavy ions was discussed, and an analysis on different incident angles using geometry distribution was performed. A 2.5-D TCAD simulation was included to verify the geometry theory, the result showed good agreement.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122941102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857682
Yu-Mi Kim, S. Yun, Eun-Joo Oh, Gwang-Il Jung, Han-sung Kim, H. Kwon
Korea Multi-purpose Accelerator Complex (KOMAC) has been operating a low-flux proton irradiation facility for space radiation effect testing since 2018. The low-flux irradiation facility can provide a very low-flux range from 105 to $boldsymbol{10^{8}#/text{cm}^{2}/text{pulse}}$, good uniformity within $pm 10{%}$ and a large beam area with a wide range of proton energies. In this paper, we report the components of the present diagnostics installed at KOMAC for low-flux proton beam measurement in detail.
{"title":"Diagnostics of Low-Flux Proton Beams for Radiation Effect Testing at KOMAC","authors":"Yu-Mi Kim, S. Yun, Eun-Joo Oh, Gwang-Il Jung, Han-sung Kim, H. Kwon","doi":"10.1109/RADECS50773.2020.9857682","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857682","url":null,"abstract":"Korea Multi-purpose Accelerator Complex (KOMAC) has been operating a low-flux proton irradiation facility for space radiation effect testing since 2018. The low-flux irradiation facility can provide a very low-flux range from 105 to $boldsymbol{10^{8}#/text{cm}^{2}/text{pulse}}$, good uniformity within $pm 10{%}$ and a large beam area with a wide range of proton energies. In this paper, we report the components of the present diagnostics installed at KOMAC for low-flux proton beam measurement in detail.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116736223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857732
Xu Zhang, Fanyu Liu, Bo Li, Binhong Li, Fengyuan Zhang, Yang Huang, Can Yang, Jiajun Luo, Zhengsheng Han, Xinyue Liu, K. Petrosyants
The electrostatic potential model of Silicon-on-Insulator (SOI) FinFETs is modified for total dose ionization (TID) effects in Fin-on-Insulator (FOI) FinFETs. The adapted model includes the effects of oxide trapped charges (Not) and interface traps (Nit) on the potential distributions in both gate oxide and buried oxide layers (BOX) respectively. TCAD simulations validate it. It is also experimentally demonstrated that the updated model can be employed to predict threshold voltage and its shift ΔVTH induced by various TID irradiations.
{"title":"A two-dimensional electrostatic potential model for total dose ionization effects in FOI FinFETs","authors":"Xu Zhang, Fanyu Liu, Bo Li, Binhong Li, Fengyuan Zhang, Yang Huang, Can Yang, Jiajun Luo, Zhengsheng Han, Xinyue Liu, K. Petrosyants","doi":"10.1109/RADECS50773.2020.9857732","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857732","url":null,"abstract":"The electrostatic potential model of Silicon-on-Insulator (SOI) FinFETs is modified for total dose ionization (TID) effects in Fin-on-Insulator (FOI) FinFETs. The adapted model includes the effects of oxide trapped charges (Not) and interface traps (Nit) on the potential distributions in both gate oxide and buried oxide layers (BOX) respectively. TCAD simulations validate it. It is also experimentally demonstrated that the updated model can be employed to predict threshold voltage and its shift ΔVTH induced by various TID irradiations.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126697508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857688
A. Serra, T. Vogel, G. Lefévre, S. Petzold, N. Kaiser, G. Bourgeois, M. Cyrille, L. Alff, C. Trautmann, C. Vallée, D. Sylvain, C. Charpin-Nicolle, Gemma Navarro, E. Nowak
In this work we analyze, thanks to both material and 4kb memory arrays characterization, the different effects of heavy ion radiation at high fluences on $mathbf{Ge}_{mathbf{2}}mathbf{Sb}_{mathbf{2}}mathbf{Te}_{mathbf{5},}$ and Ge-rich GeSbTe based Phase-Change Memory (PCM).
{"title":"Heavy Ions Radiation Effects on 4kb Phase-Change Memory","authors":"A. Serra, T. Vogel, G. Lefévre, S. Petzold, N. Kaiser, G. Bourgeois, M. Cyrille, L. Alff, C. Trautmann, C. Vallée, D. Sylvain, C. Charpin-Nicolle, Gemma Navarro, E. Nowak","doi":"10.1109/RADECS50773.2020.9857688","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857688","url":null,"abstract":"In this work we analyze, thanks to both material and 4kb memory arrays characterization, the different effects of heavy ion radiation at high fluences on $mathbf{Ge}_{mathbf{2}}mathbf{Sb}_{mathbf{2}}mathbf{Te}_{mathbf{5},}$ and Ge-rich GeSbTe based Phase-Change Memory (PCM).","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127323129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857721
Mohammadreza Rezaei, P. Martín-Holgado, Y. Morilla, F. J. Franco, J. Fabero, H. Mecha, H. Puchner, G. Hubert, J. A. Clemente
This abstract presents an experimental study of the impact of using a high flux in radiation ground tests on the measured cross-section of SRAMs. Experimental results obtained with 15 MeV protons will show that using a high particle flux makes the measured cross-section increase by almost 1 order of magnitude.
{"title":"Impact of High Particle Flux in Radiation Ground Tests with Protons","authors":"Mohammadreza Rezaei, P. Martín-Holgado, Y. Morilla, F. J. Franco, J. Fabero, H. Mecha, H. Puchner, G. Hubert, J. A. Clemente","doi":"10.1109/RADECS50773.2020.9857721","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857721","url":null,"abstract":"This abstract presents an experimental study of the impact of using a high flux in radiation ground tests on the measured cross-section of SRAMs. Experimental results obtained with 15 MeV protons will show that using a high particle flux makes the measured cross-section increase by almost 1 order of magnitude.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128789497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857714
N. Aksteiner, J. Budroweit, T. Firchau, J. Häseker
This paper presents the latest test results of power regulator devices under proton irradiation. Single event effects (SEE) and accumulated total ionizing dose (TID) effects are investigated, analyzed and discussed.
{"title":"Compendium of Current Proton-Induced Radiation Effect Results on Power Regulators","authors":"N. Aksteiner, J. Budroweit, T. Firchau, J. Häseker","doi":"10.1109/RADECS50773.2020.9857714","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857714","url":null,"abstract":"This paper presents the latest test results of power regulator devices under proton irradiation. Single event effects (SEE) and accumulated total ionizing dose (TID) effects are investigated, analyzed and discussed.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123046282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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