Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857707
W. H. Newman, N. V. van Vonno, K. Bernard, D. Wackley, L. Pearce, E. Thomson
We report the results of total ionizing dose (TID) and destructive and nondestructive single-event effects (SEE) testing of the Intersil ISL70100SEH and ISL70300SEH radiation hardened, current sense amplifier circuits.
{"title":"Total Dose and Single-Event Effects Test Results of the Intersil ISL 70x00SEH Current Sense Amplifier","authors":"W. H. Newman, N. V. van Vonno, K. Bernard, D. Wackley, L. Pearce, E. Thomson","doi":"10.1109/RADECS50773.2020.9857707","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857707","url":null,"abstract":"We report the results of total ionizing dose (TID) and destructive and nondestructive single-event effects (SEE) testing of the Intersil ISL70100SEH and ISL70300SEH radiation hardened, current sense amplifier circuits.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121344453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857678
A. Jain, A. Veggetti, D. Crippa, A. Benfante, S. Gerardin, M. Bagatin, C. Cazzaniga
This paper presents design, implementation, test methodology and results for radiation qualification on 90nm ST BCD CMOS technology platform. The radiation test is performed with alpha particles, heavy ions and neutron. The results obtained are analyzed and correlated with CAD data. Further the effectiveness of prominent radiation hardening techniques is also studied which can make the technology usable for very low error rate applications such as automotive, medical and space.
本文介绍了在90nm ST BCD CMOS技术平台上进行辐射鉴定的设计、实现、测试方法和结果。辐射试验用α粒子、重离子和中子进行。对所得结果进行了分析，并与CAD数据进行了对比。此外，还研究了突出的辐射硬化技术的有效性，这可以使该技术可用于非常低错误率的应用，如汽车、医疗和空间。
{"title":"Alpha, Heavy Ion and Neutron Test Results On 90nm ST BCD-CMOS technology","authors":"A. Jain, A. Veggetti, D. Crippa, A. Benfante, S. Gerardin, M. Bagatin, C. Cazzaniga","doi":"10.1109/RADECS50773.2020.9857678","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857678","url":null,"abstract":"This paper presents design, implementation, test methodology and results for radiation qualification on 90nm ST BCD CMOS technology platform. The radiation test is performed with alpha particles, heavy ions and neutron. The results obtained are analyzed and correlated with CAD data. Further the effectiveness of prominent radiation hardening techniques is also studied which can make the technology usable for very low error rate applications such as automotive, medical and space.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122586757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857691
T. Blanchet, A. Morana, E. Marin, Y. Ouerdane, A. Boukenter, C. Hnatovsky, P. Lu, S. Mihailov, S. Girard
Fiber Bragg Gratings (FBGs) present numerous advantages for strain or temperature monitoring as the multiplexing ability or the high acquisition rate of interrogators. However, one FBG of the usual types cannot discriminate between temperature and strain. The new Fiber Random Gratings (FRG) present a large spectrum as opposite to the usual Bragg peak and the whole spectrum shifts varying the temperature or strain. By separating this large spectral band into smaller domains and by monitoring the response of each domain to temperature and strain, discriminating the temperature and strain contributions becomes feasible with a unique sensor. In this abstract, we study for the first time the radiation response of a type I FRG inscribed into a Ge-doped fiber with a fs-laser. Its thermal stability was checked by performing 3 cycles between $20^{circ}mathrm{C}$ and $60^{circ}mathrm{C}$ with 2 hours lasting step of $10^{circ}mathrm{C}$. This grating was irradiated at room temperature (RT) under X-rays, at a dose rate of 1 $mathbf{Gy}(mathbf{SiO}_{2})/mathbf{s}$ up to the dose of 225 kGy. We observed a spectrum shift of approximatively 15 pm, independently of the spectral region, at the maximal dose, which represents an error of $sim 1^{circ}mathrm{C}$ if the grating is used as a temperature sensor. The responses of several other RFBGs inscribed in different conditions will be added for the conference and final paper.
{"title":"Radiation Responses of Fiber Random Gratings","authors":"T. Blanchet, A. Morana, E. Marin, Y. Ouerdane, A. Boukenter, C. Hnatovsky, P. Lu, S. Mihailov, S. Girard","doi":"10.1109/RADECS50773.2020.9857691","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857691","url":null,"abstract":"Fiber Bragg Gratings (FBGs) present numerous advantages for strain or temperature monitoring as the multiplexing ability or the high acquisition rate of interrogators. However, one FBG of the usual types cannot discriminate between temperature and strain. The new Fiber Random Gratings (FRG) present a large spectrum as opposite to the usual Bragg peak and the whole spectrum shifts varying the temperature or strain. By separating this large spectral band into smaller domains and by monitoring the response of each domain to temperature and strain, discriminating the temperature and strain contributions becomes feasible with a unique sensor. In this abstract, we study for the first time the radiation response of a type I FRG inscribed into a Ge-doped fiber with a fs-laser. Its thermal stability was checked by performing 3 cycles between $20^{circ}mathrm{C}$ and $60^{circ}mathrm{C}$ with 2 hours lasting step of $10^{circ}mathrm{C}$. This grating was irradiated at room temperature (RT) under X-rays, at a dose rate of 1 $mathbf{Gy}(mathbf{SiO}_{2})/mathbf{s}$ up to the dose of 225 kGy. We observed a spectrum shift of approximatively 15 pm, independently of the spectral region, at the maximal dose, which represents an error of $sim 1^{circ}mathrm{C}$ if the grating is used as a temperature sensor. The responses of several other RFBGs inscribed in different conditions will be added for the conference and final paper.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"300 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133170078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857704
N. Rezzak, J.J. Wang, R. Chipana, C. Lao, G. Bakker, F. Hawley, E. Hamdy
The Single-Event response of Microchip 28 nm RT PolarFire SONOS-based FPGA is characterized using heavy ion and 64 MeV proton. The SONOS configuration cell is SEU immune due to the SONOS technology and the design of the configuration cell of RT PolarFire FPGA.
{"title":"Heavy Ion and Proton Induced Single Event Effects on Microchip RT PolarFire FPGA","authors":"N. Rezzak, J.J. Wang, R. Chipana, C. Lao, G. Bakker, F. Hawley, E. Hamdy","doi":"10.1109/RADECS50773.2020.9857704","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857704","url":null,"abstract":"The Single-Event response of Microchip 28 nm RT PolarFire SONOS-based FPGA is characterized using heavy ion and 64 MeV proton. The SONOS configuration cell is SEU immune due to the SONOS technology and the design of the configuration cell of RT PolarFire FPGA.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133371023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857686
B. Du, M. Colucci, S. Francola, L. Aranci, E. Artina, N. Ratti, E. Picardi, R. Mancini, V. Piloni, S. Azimi, L. Sterpone
We present a SET generation and propagation model based on Hann-smoothing function for 65nm Flash-based FPGAs. The model has been characterized with heavy-ions radiation campaigns demonstrating its viable usage for circuit analysis and mitigation purposes.
{"title":"A Novel Propagation Model for Heavy-Ions Induced Single Event Transients on 65nm Flash-based FPGAs","authors":"B. Du, M. Colucci, S. Francola, L. Aranci, E. Artina, N. Ratti, E. Picardi, R. Mancini, V. Piloni, S. Azimi, L. Sterpone","doi":"10.1109/RADECS50773.2020.9857686","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857686","url":null,"abstract":"We present a SET generation and propagation model based on Hann-smoothing function for 65nm Flash-based FPGAs. The model has been characterized with heavy-ions radiation campaigns demonstrating its viable usage for circuit analysis and mitigation purposes.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115422727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857680
G. Cussac, L. Artola, T. Nuns, S. Ducret
This work presents electricals characteristics of primary and secondly irradiated MOSFET transistors. Secondly irradiated transistors after nominal operation recovery showed a great TID resistance betterment. This improvement is allowed by latent interface traps charge build-up during long time annealing. Latent interface traps effects on electrical degradation at STI level are physically explained with simulation and experiment comparison.
{"title":"Total Ionizing Dose Hardness Enhancement at Room Temperature in CMOS 0.25µm Technology","authors":"G. Cussac, L. Artola, T. Nuns, S. Ducret","doi":"10.1109/RADECS50773.2020.9857680","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857680","url":null,"abstract":"This work presents electricals characteristics of primary and secondly irradiated MOSFET transistors. Secondly irradiated transistors after nominal operation recovery showed a great TID resistance betterment. This improvement is allowed by latent interface traps charge build-up during long time annealing. Latent interface traps effects on electrical degradation at STI level are physically explained with simulation and experiment comparison.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121996660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857725
J. Armani, S. Blairon, Alejandro Ureña-Acuña
The response to total ionizing dose of several microcontrollers and operational amplifiers was evaluated under 60Co irradiation. The MSP430FR5994 microcontroller and the ADA4622-1 operational amplifier were fully functional after a cumulated dose of 5 kGy.
{"title":"Total Ionizing Dose Response of Commercial Off-The-Shelf Microcontrollers and Operational Amplifiers","authors":"J. Armani, S. Blairon, Alejandro Ureña-Acuña","doi":"10.1109/RADECS50773.2020.9857725","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857725","url":null,"abstract":"The response to total ionizing dose of several microcontrollers and operational amplifiers was evaluated under 60Co irradiation. The MSP430FR5994 microcontroller and the ADA4622-1 operational amplifier were fully functional after a cumulated dose of 5 kGy.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127677257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857706
P. Fernandez-Martínez, Athina Papadopoulou, S. Danzeca, G. Foucard, R. García Alía, M. Kastriotou, C. Cazzaniga, Giorgos Tsiligiannis, R. Gaillard
This work compiles the outcome of several irradiation test campaigns, carried out with the aim of studying the susceptibility to hard Single Event Effects (SEE) of various commercial power MOSFET references. Proton, neutron and heavy ion irradiation were performed on the same set of MOSFET references, allowing for a comparison of their respective Single Event Burnout (SEB) and Single Event Gate Rupture (SEGR) sensitiveness under different energy and particle irradiation conditions.
{"title":"SEE Testing on commercial power MOSFETs","authors":"P. Fernandez-Martínez, Athina Papadopoulou, S. Danzeca, G. Foucard, R. García Alía, M. Kastriotou, C. Cazzaniga, Giorgos Tsiligiannis, R. Gaillard","doi":"10.1109/RADECS50773.2020.9857706","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857706","url":null,"abstract":"This work compiles the outcome of several irradiation test campaigns, carried out with the aim of studying the susceptibility to hard Single Event Effects (SEE) of various commercial power MOSFET references. Proton, neutron and heavy ion irradiation were performed on the same set of MOSFET references, allowing for a comparison of their respective Single Event Burnout (SEB) and Single Event Gate Rupture (SEGR) sensitiveness under different energy and particle irradiation conditions.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131396224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857696
S. C. Witczak, Jeremiah J. Horner, James Hack, N.P. Goldstein, Paul Dudek, Brainton Song, S. Messenger, Glen E. Macejik, Thomas J. Knight
Test results for single event effects due to heavy-ion irradiation are reported for more than 30 part types. Event characterization includes LET thresholds, cross-sections and os-cilloscope captures for both destructive and non-destructive events. Event rates for selected parts are estimated from the cross-section data for three orbits. These results will provide systems designers information that is critical to parts selection for space applications.
{"title":"Compendium of Single Event Effects Test Results for Selected Integrated Circuits","authors":"S. C. Witczak, Jeremiah J. Horner, James Hack, N.P. Goldstein, Paul Dudek, Brainton Song, S. Messenger, Glen E. Macejik, Thomas J. Knight","doi":"10.1109/RADECS50773.2020.9857696","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857696","url":null,"abstract":"Test results for single event effects due to heavy-ion irradiation are reported for more than 30 part types. Event characterization includes LET thresholds, cross-sections and os-cilloscope captures for both destructive and non-destructive events. Event rates for selected parts are estimated from the cross-section data for three orbits. These results will provide systems designers information that is critical to parts selection for space applications.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134041067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857681
G. Augustin, M. Mauguet, N. Andrianjohany, N. Sukhaseum, N. Chatry, F. Bezerra
The electron induced SEU risk on Earth missions is usually considered as negligible, though previous works have demonstrated that electrons could trigger SEU in CMOS devices. In fact, the high energy electron fluxes are too low in Earth space environment to represent a real threat, from the SEE point of view, in currently used device technologies for space applications. Nevertheless, the increasing use of highly integrated CMOS technologies raises the question of the SEU electron sensitivity in the most recent technology nodes. Moreover, if the SEU sensitivity becomes significant in sub-28-nm devices, the system reliability may also be affected by the MBU risk. This work investigates about the electron induced SEU sensitivity of recent CMOS technologies. The related question of the MBU risk due to electrons in space environment is also studied. The devices exposed to electron beams are SRAM-based Xilinx FPGA manufactured in 20-nm planar and 16-nm FinFET technologies. Detailed 3D device circuit models were done with TRADCARE®. This tool was also used as interface to GEANT4 for forward Monte-Carlo simulations. An SRAM cell electrical layout was also implemented in TRADCARE to consider the electrical behaviour of the circuit. The TRADCARE/GEANT4 calculation outputs were used to explain and discuss the experimental sensitivities observed under 18 MeV electron beam.
{"title":"Electron induced SEU and MBU sensitivity of 20-nm planar and 16-nm FinFET SRAM-based FPGA","authors":"G. Augustin, M. Mauguet, N. Andrianjohany, N. Sukhaseum, N. Chatry, F. Bezerra","doi":"10.1109/RADECS50773.2020.9857681","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857681","url":null,"abstract":"The electron induced SEU risk on Earth missions is usually considered as negligible, though previous works have demonstrated that electrons could trigger SEU in CMOS devices. In fact, the high energy electron fluxes are too low in Earth space environment to represent a real threat, from the SEE point of view, in currently used device technologies for space applications. Nevertheless, the increasing use of highly integrated CMOS technologies raises the question of the SEU electron sensitivity in the most recent technology nodes. Moreover, if the SEU sensitivity becomes significant in sub-28-nm devices, the system reliability may also be affected by the MBU risk. This work investigates about the electron induced SEU sensitivity of recent CMOS technologies. The related question of the MBU risk due to electrons in space environment is also studied. The devices exposed to electron beams are SRAM-based Xilinx FPGA manufactured in 20-nm planar and 16-nm FinFET technologies. Detailed 3D device circuit models were done with TRADCARE®. This tool was also used as interface to GEANT4 for forward Monte-Carlo simulations. An SRAM cell electrical layout was also implemented in TRADCARE to consider the electrical behaviour of the circuit. The TRADCARE/GEANT4 calculation outputs were used to explain and discuss the experimental sensitivities observed under 18 MeV electron beam.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126712122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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