Pub Date : 2009-11-13DOI: 10.1109/INTERNANO.2009.5335638
V. Gridchin, M. A. Chebanov
The impact of singularity points on stress distribution in piezoresistive module is investigated by means of FEM simulation. Strong influence of singularities on stress distribution in silicon-glass interface is presented in this paper.
{"title":"FEM simulation of piezoresistive pressure module","authors":"V. Gridchin, M. A. Chebanov","doi":"10.1109/INTERNANO.2009.5335638","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335638","url":null,"abstract":"The impact of singularity points on stress distribution in piezoresistive module is investigated by means of FEM simulation. Strong influence of singularities on stress distribution in silicon-glass interface is presented in this paper.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"216 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128167916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-13DOI: 10.1109/INTERNANO.2009.5335625
V. Dragunov, M. N. Lyutaeva
The paper contains mathematical expressions for computation of output power for MEM transducer with electrodes produced from different materials. Dependence of transducer output power on resonance frequency and its dependence on difference between work functions of electrode materials are analyzed.
{"title":"Parameters estimation of the MEM transducer with electrodes produced from different materials","authors":"V. Dragunov, M. N. Lyutaeva","doi":"10.1109/INTERNANO.2009.5335625","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335625","url":null,"abstract":"The paper contains mathematical expressions for computation of output power for MEM transducer with electrodes produced from different materials. Dependence of transducer output power on resonance frequency and its dependence on difference between work functions of electrode materials are analyzed.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132562494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-13DOI: 10.1109/INTERNANO.2009.5335646
D. V. Nomokonov, A. Bykov
Reasons for the occurrence of resonance backscattering peaks in submicron electron ring interferometer are investigated in terms of the model of single-mode resonance trail. The suppression of resonance by magnetic field is explained qualitatively.
{"title":"Resonance backscattering and negative magnetoresistance in submicron quantum ring interferometer","authors":"D. V. Nomokonov, A. Bykov","doi":"10.1109/INTERNANO.2009.5335646","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335646","url":null,"abstract":"Reasons for the occurrence of resonance backscattering peaks in submicron electron ring interferometer are investigated in terms of the model of single-mode resonance trail. The suppression of resonance by magnetic field is explained qualitatively.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"08 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121754761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-13DOI: 10.1109/INTERNANO.2009.5335634
D. Mikhailova, D. V. Chesnokov
This paper describes the method to study the absorptivity of nanoscale layers of organometallic compounds. This method is based on frustrated total internal reflection phenomenon.
本文介绍了研究有机金属化合物纳米层吸收率的方法。该方法是基于受挫全内反射现象。
{"title":"Research methods of absorptivity of nanoscale layers of organometallic compounds in the processes of micromechanics","authors":"D. Mikhailova, D. V. Chesnokov","doi":"10.1109/INTERNANO.2009.5335634","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335634","url":null,"abstract":"This paper describes the method to study the absorptivity of nanoscale layers of organometallic compounds. This method is based on frustrated total internal reflection phenomenon.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131551214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-13DOI: 10.1109/INTERNANO.2009.5335649
A. Klimov
Giant anisotropic change of current in constant magnet field is observed in films of narrow band semiconductor PbSnTe:In. This phenomenon is considered with regard for ferroelectric properties in terms of the theory of space-charge-limited currents.
{"title":"Anisotropy of galvanomagnetic phenomena in epitaxial films of ferroelectric semiconductor PbSnTe:In","authors":"A. Klimov","doi":"10.1109/INTERNANO.2009.5335649","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335649","url":null,"abstract":"Giant anisotropic change of current in constant magnet field is observed in films of narrow band semiconductor PbSnTe:In. This phenomenon is considered with regard for ferroelectric properties in terms of the theory of space-charge-limited currents.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115800678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-13DOI: 10.1109/INTERNANO.2009.5335642
A. Kozlov, E. A. Kurdyukova
Thin films of Ga2O3-In2O3 are obtained by magnetron deposition with further thermal oxidation. Dependences of resistance variation on time under strain and on strain value are observed. The model for explaining the obtained results is developed. It is based on the barrier conductivity of polycrystalline oxide semiconductor materials.
{"title":"The influence of deformation on conductivity of Ga2O3-In2O3 thin films","authors":"A. Kozlov, E. A. Kurdyukova","doi":"10.1109/INTERNANO.2009.5335642","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335642","url":null,"abstract":"Thin films of Ga<inf>2</inf>O<inf>3</inf>-In<inf>2</inf>O<inf>3</inf> are obtained by magnetron deposition with further thermal oxidation. Dependences of resistance variation on time under strain and on strain value are observed. The model for explaining the obtained results is developed. It is based on the barrier conductivity of polycrystalline oxide semiconductor materials.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116777935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-13DOI: 10.1109/INTERNANO.2009.5335621
V. Korneyev
The being developed micromechanical device is designed for control of the optical rays position in space. The device is made in the format of the silicon chip with sizes of 1 × 2 cm and consists of 100 micro-mirrors. Each micromirror has an actuator (an engine) in the form of a magnetic dipole. The device is controlled by an external magnetic field induces a magnetic moment in the dipoles. The device works as a diffraction grating with a variable angle of light, redirecting the reflected light flux into one of the diffraction orders.
{"title":"Study of the parameters of micromechanical devices with electromagnetic control","authors":"V. Korneyev","doi":"10.1109/INTERNANO.2009.5335621","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335621","url":null,"abstract":"The being developed micromechanical device is designed for control of the optical rays position in space. The device is made in the format of the silicon chip with sizes of 1 × 2 cm and consists of 100 micro-mirrors. Each micromirror has an actuator (an engine) in the form of a magnetic dipole. The device is controlled by an external magnetic field induces a magnetic moment in the dipoles. The device works as a diffraction grating with a variable angle of light, redirecting the reflected light flux into one of the diffraction orders.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130019170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-13DOI: 10.1109/INTERNANO.2009.5335614
B. Prince
Anything that stores two states can be a memory. The challenge is to get: Required Properties and Reliability for intended application at a competitive cost.
任何存储两种状态的东西都可以是存储器。挑战在于:以具有竞争力的成本获得预期应用所需的性能和可靠性。
{"title":"Evolution of N-V memories: Flash memory trends with PCRAM/FeRAM/ReRAM","authors":"B. Prince","doi":"10.1109/INTERNANO.2009.5335614","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335614","url":null,"abstract":"Anything that stores two states can be a memory. The challenge is to get: Required Properties and Reliability for intended application at a competitive cost.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127331935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-13DOI: 10.1109/INTERNANO.2009.5335629
A. Gismatulin, G. N. Kamaev, A. Antonenko, S. Arzhannikova, V. Volodin, M. Efremov, Anna S. Gileva
Si-SiO2 multilayer nanoscale structures were obtained using а procedures of α-Si:H thin film depositions and subsequently plasma enhanced oxidation. Thus, a structure containing 6 layers of α-Si:H with thickness of 50 Å, inserted between the layers of SiO2 with thickness 150 Å has been created. The experimental setup with source of wide aperture and high-density inductively coupled RF plasma (ICP) was used. The properties of the structures were investigated through the characteristics of MOS capacitors. Electrical measurements reveal significant peculiarities connected with charge transport through prepared multilayer nanoscale structures.
{"title":"Nanoscale Si/SiO2 multilayer structures produced by plasma-chemical technology","authors":"A. Gismatulin, G. N. Kamaev, A. Antonenko, S. Arzhannikova, V. Volodin, M. Efremov, Anna S. Gileva","doi":"10.1109/INTERNANO.2009.5335629","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335629","url":null,"abstract":"Si-SiO2 multilayer nanoscale structures were obtained using а procedures of α-Si:H thin film depositions and subsequently plasma enhanced oxidation. Thus, a structure containing 6 layers of α-Si:H with thickness of 50 Å, inserted between the layers of SiO2 with thickness 150 Å has been created. The experimental setup with source of wide aperture and high-density inductively coupled RF plasma (ICP) was used. The properties of the structures were investigated through the characteristics of MOS capacitors. Electrical measurements reveal significant peculiarities connected with charge transport through prepared multilayer nanoscale structures.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133308172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-13DOI: 10.1109/INTERNANO.2009.5335626
D. Ostertak
Parameters of the capacitive mechanical-to-electrical energy MEMS converters are investigated experimentally. A comparison of the theoretical calculations performed using simplified models as well as experimental data is carried out. The analysis shows that existing differences between calculated and experimental data are probably related to the additional factors, e.g. parasitic capacity, which arise during measurements and are not taken into considerations in the simplified models.
{"title":"Experimental evaluation of parameters of the capacitive MEMS converters","authors":"D. Ostertak","doi":"10.1109/INTERNANO.2009.5335626","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335626","url":null,"abstract":"Parameters of the capacitive mechanical-to-electrical energy MEMS converters are investigated experimentally. A comparison of the theoretical calculations performed using simplified models as well as experimental data is carried out. The analysis shows that existing differences between calculated and experimental data are probably related to the additional factors, e.g. parasitic capacity, which arise during measurements and are not taken into considerations in the simplified models.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133404010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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