In essence, smart grids are electrical networks that transmit and distribute electricity in a reliable, effective manner using information and communication technology (ICT). Trust and security are of the utmost importance. False data injection (FDI) attacks are one of the most serious new security problems, and they can drastically raise the price of the energy distribution process. However, rather than smart grid infrastructures, the majority of current research focuses on FDI defenses for conventional electricity networks. By utilizing spatial-temporal correlations between grid components, we create an effective and real-time technique to identify FDI attacks in smart grids called a deep learning framework. We show that the suggested method offers an accurate and dependable solution using realistic simulations based on the smart grid compared to the benchmarked techniques.
{"title":"Detection of False Data Injection Attacks in Smart-Grid Systems: Benchmarking Deep Learning Techniques","authors":"","doi":"10.33140/jeee.02.01.05","DOIUrl":"https://doi.org/10.33140/jeee.02.01.05","url":null,"abstract":"In essence, smart grids are electrical networks that transmit and distribute electricity in a reliable, effective manner using information and communication technology (ICT). Trust and security are of the utmost importance. False data injection (FDI) attacks are one of the most serious new security problems, and they can drastically raise the price of the energy distribution process. However, rather than smart grid infrastructures, the majority of current research focuses on FDI defenses for conventional electricity networks. By utilizing spatial-temporal correlations between grid components, we create an effective and real-time technique to identify FDI attacks in smart grids called a deep learning framework. We show that the suggested method offers an accurate and dependable solution using realistic simulations based on the smart grid compared to the benchmarked techniques.","PeriodicalId":39047,"journal":{"name":"Journal of Electrical and Electronics Engineering","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135339442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Paul Dirac(1902-1984) theoretically predicted the existence of positrons for the first time in 1928, and Carl Anderson(1905-1991) found the positrons through cosmic ray observation experiments in 1932. Positrons are the antiparticle of electron, and their spin and mass are equal to electrons and they have the same electric charge but are different in sign. That is, their spin is ½ Fermion, their electric charge is base charge +e, and their mass is approximately 9.11×10−31 kg. Because positrons are the lightest particle with a positive charge, they have an infinite lifespan without collapsing into other particles. But if positron meets with another electron surrounding them, double extinction of positron and electron occurs, and positrons disappear with electrons, and then photons are generated. Because the earth has many electrons, double extinction occurs immediately in most cases even if positrons are created. There are gravity, electromagnetic force, weak interaction in the interaction of positrons, and the isotopes emitting positrons include carbon-11, nitrogen-13, oxygen-15, fluorine-18. For example, carbon11 turns into boron-11. These isotopes are used on positron emission tomography device. Electron capture is another way of decay that can occur competitively with positron emission, but the larger the difference of energy is, the higher the probability of decaying due to positron emission is. Researchers say that positrons are generated if there is collision between high energies by the interaction of positrons, but we think that this should be supplemented more. There is a hypothesis that positrons are generated when the unstable radioactive isotopes created during a supernova explosion collapse. It is inevitable that it will cost a lot of time and money when generating radioactive isotopes according to this hypothesis. This makes us try new methods about positrons emission breaking away from conventional fusion methods. Our new methods for generating positrons are to make artificially the fusion with micro/nanoparticles and isotopes emitting positrons and the interchangeability between them, and to create a great deal of heat energy by making micro/nanoparticles collide into each other with using thermal energy and waves between micro/ nanoparticles. We think that our new methods are the best way to generate high heat with a small energy source. To put our ideas into practice, we made a stainless steel rectangular plate using the combined materials of MEGA-STN, that is the new types fused with each of micro/nanoparticles and isotopes emitting positrons, and added MEGA-STN to materials of the existing stainless steel heater stick. We measured temperature changes depending on whether or not the materials are present and depending on the content of the materials, and checked even positrons emission in our study. Consequently, we found increasing to 200~300℃ compared to the general temperature when a constant temperature is created with mini
{"title":"The Relation between MEGA-STN and Positron Wave Thermal Energy","authors":"","doi":"10.33140/jeee.02.01.03","DOIUrl":"https://doi.org/10.33140/jeee.02.01.03","url":null,"abstract":"Paul Dirac(1902-1984) theoretically predicted the existence of positrons for the first time in 1928, and Carl Anderson(1905-1991) found the positrons through cosmic ray observation experiments in 1932. Positrons are the antiparticle of electron, and their spin and mass are equal to electrons and they have the same electric charge but are different in sign. That is, their spin is ½ Fermion, their electric charge is base charge +e, and their mass is approximately 9.11×10−31 kg. Because positrons are the lightest particle with a positive charge, they have an infinite lifespan without collapsing into other particles. But if positron meets with another electron surrounding them, double extinction of positron and electron occurs, and positrons disappear with electrons, and then photons are generated. Because the earth has many electrons, double extinction occurs immediately in most cases even if positrons are created. There are gravity, electromagnetic force, weak interaction in the interaction of positrons, and the isotopes emitting positrons include carbon-11, nitrogen-13, oxygen-15, fluorine-18. For example, carbon11 turns into boron-11. These isotopes are used on positron emission tomography device. Electron capture is another way of decay that can occur competitively with positron emission, but the larger the difference of energy is, the higher the probability of decaying due to positron emission is. Researchers say that positrons are generated if there is collision between high energies by the interaction of positrons, but we think that this should be supplemented more. There is a hypothesis that positrons are generated when the unstable radioactive isotopes created during a supernova explosion collapse. It is inevitable that it will cost a lot of time and money when generating radioactive isotopes according to this hypothesis. This makes us try new methods about positrons emission breaking away from conventional fusion methods. Our new methods for generating positrons are to make artificially the fusion with micro/nanoparticles and isotopes emitting positrons and the interchangeability between them, and to create a great deal of heat energy by making micro/nanoparticles collide into each other with using thermal energy and waves between micro/ nanoparticles. We think that our new methods are the best way to generate high heat with a small energy source. To put our ideas into practice, we made a stainless steel rectangular plate using the combined materials of MEGA-STN, that is the new types fused with each of micro/nanoparticles and isotopes emitting positrons, and added MEGA-STN to materials of the existing stainless steel heater stick. We measured temperature changes depending on whether or not the materials are present and depending on the content of the materials, and checked even positrons emission in our study. Consequently, we found increasing to 200~300℃ compared to the general temperature when a constant temperature is created with mini","PeriodicalId":39047,"journal":{"name":"Journal of Electrical and Electronics Engineering","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79045049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Customer satisfaction is critical for the success of any organization. This case study presents a design company and manufacturing supplier that has received customer complaints about defective temperature sensors and power supply units in maritime vessels. The research aims to identify the root cause of the issue and implement a solution to prevent its recurrence using the Lean Eight Disciplines methodology. This includes: (1) a 5 Whys analysis by a cross-functional team, (2) confirmation of the problem description, (3) containment actions, (4) root cause analysis of the occurrence, (5) permanent corrective actions, (6) implementation of the permanent corrective action, (7) actions to prevent recurrence, and (8) closure with an 8D report and congratulations to the cross-functional team from the design, engineering, and supplier production sites. This study presents the development and implementation of the Eight Disciplines (8D) investigation tool for addressing issues in the factories and improving the product life cycle in the manufacturing industry. The 8D tool is designed for the cross-functional teams to work together to identify the root cause of problems using the "five whys" method and implement corrective and preventive actions to prevent similar issues from occurring in the future. The novelty of this case study is the development of an 8D analytics template for product managers and practitioners in manufacturing and production companies to use for improving the quality of products throughout their life cycle. The case study also highlights the challenges and opportunities of using the 8D tool for problem-solving, including the high warranty cost and production failures, the unreliability of products and resources, and different scopes of issues. In one example, the 8D analytics template was used to identify a long-term fix for a circuit prone to leakage current by using a different flux chemistry that can be cleaned with a water-based solvent, rather than the traditional "no-clean" solder flux that requires specific solvents for effective cleaning
{"title":"Solving Manufacturing Problems with 8D Methodology: A Case Study of Leakage Current in a Production Company","authors":"","doi":"10.33140/jeee.02.01.04","DOIUrl":"https://doi.org/10.33140/jeee.02.01.04","url":null,"abstract":"Customer satisfaction is critical for the success of any organization. This case study presents a design company and manufacturing supplier that has received customer complaints about defective temperature sensors and power supply units in maritime vessels. The research aims to identify the root cause of the issue and implement a solution to prevent its recurrence using the Lean Eight Disciplines methodology. This includes: (1) a 5 Whys analysis by a cross-functional team, (2) confirmation of the problem description, (3) containment actions, (4) root cause analysis of the occurrence, (5) permanent corrective actions, (6) implementation of the permanent corrective action, (7) actions to prevent recurrence, and (8) closure with an 8D report and congratulations to the cross-functional team from the design, engineering, and supplier production sites. This study presents the development and implementation of the Eight Disciplines (8D) investigation tool for addressing issues in the factories and improving the product life cycle in the manufacturing industry. The 8D tool is designed for the cross-functional teams to work together to identify the root cause of problems using the \"five whys\" method and implement corrective and preventive actions to prevent similar issues from occurring in the future. The novelty of this case study is the development of an 8D analytics template for product managers and practitioners in manufacturing and production companies to use for improving the quality of products throughout their life cycle. The case study also highlights the challenges and opportunities of using the 8D tool for problem-solving, including the high warranty cost and production failures, the unreliability of products and resources, and different scopes of issues. In one example, the 8D analytics template was used to identify a long-term fix for a circuit prone to leakage current by using a different flux chemistry that can be cleaned with a water-based solvent, rather than the traditional \"no-clean\" solder flux that requires specific solvents for effective cleaning","PeriodicalId":39047,"journal":{"name":"Journal of Electrical and Electronics Engineering","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86834254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Einstein derived the Lorentz and its inverse transformations based on the principles of the relativity of the laws of physics and the constancy of light’s speed. However, only the principle of the constancy of light’s speed can induce the Lorentz and its inverse transformations, indicating that the relativity of the laws of physics arises from the constancy of light’s speed. Einstein also assumed that the relativity of inertial systems further establishes the relativity of the laws of physics. However, using light and rigid rulers together enables distinguishing between rest and constant-velocity systems (called the absoluteness of inertial systems): if the lengths measured by the rigid and light rulers are the same, it is a rest system; otherwise, it is a constant-velocity system. This study presents new interpretations of the twin paradox and Michelson–Morley experiment to explain the coexistence of the relativity between observers and the absoluteness of inertial systems.
{"title":"Coexistence of Relativity between Observers and the Absoluteness of Inertial Systems","authors":"","doi":"10.33140/jeee.02.01.01","DOIUrl":"https://doi.org/10.33140/jeee.02.01.01","url":null,"abstract":"Einstein derived the Lorentz and its inverse transformations based on the principles of the relativity of the laws of physics and the constancy of light’s speed. However, only the principle of the constancy of light’s speed can induce the Lorentz and its inverse transformations, indicating that the relativity of the laws of physics arises from the constancy of light’s speed. Einstein also assumed that the relativity of inertial systems further establishes the relativity of the laws of physics. However, using light and rigid rulers together enables distinguishing between rest and constant-velocity systems (called the absoluteness of inertial systems): if the lengths measured by the rigid and light rulers are the same, it is a rest system; otherwise, it is a constant-velocity system. This study presents new interpretations of the twin paradox and Michelson–Morley experiment to explain the coexistence of the relativity between observers and the absoluteness of inertial systems.","PeriodicalId":39047,"journal":{"name":"Journal of Electrical and Electronics Engineering","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81707452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study has reinterpreted the relativity of the laws of physics, an axiom of the special theory of relativity. Einstein interpreted that the relativity of the laws of physics is established due to the relativity of the inertial system. However, he did not consider that relativity was established despite the absoluteness of the inertial system being established. In this paper, we have assumed that relativity holds despite the absoluteness of the inertial system. This perspective is called observer relativity and is used distinguish it from the relativity of the inertial system. Relativity between the observers is expressed using the Lorentz and inverse transform since lights are used by the observers in both cases. To prove the absoluteness of the inertial system, a rigid ruler and light are used. If the observers measure the length with a rigid ruler and light, the reference system is consistent but the system of motion is different. This is defined as the absoluteness of the inertial system. To prove this absoluteness, several experiments were conducted to measure the electrostatic force between two electric charges fixed at the same distance. If the isotropy of space is satisfied, a stationary system can be defined. Conversely, it is defined as a constant velocity system. In the inertial system, the relativity between observers and absoluteness of the inertial system coexist.
{"title":"The Study of Absoluteness Overlooked by Special Relativity","authors":"","doi":"10.33140/jeee.02.01.02","DOIUrl":"https://doi.org/10.33140/jeee.02.01.02","url":null,"abstract":"This study has reinterpreted the relativity of the laws of physics, an axiom of the special theory of relativity. Einstein interpreted that the relativity of the laws of physics is established due to the relativity of the inertial system. However, he did not consider that relativity was established despite the absoluteness of the inertial system being established. In this paper, we have assumed that relativity holds despite the absoluteness of the inertial system. This perspective is called observer relativity and is used distinguish it from the relativity of the inertial system. Relativity between the observers is expressed using the Lorentz and inverse transform since lights are used by the observers in both cases. To prove the absoluteness of the inertial system, a rigid ruler and light are used. If the observers measure the length with a rigid ruler and light, the reference system is consistent but the system of motion is different. This is defined as the absoluteness of the inertial system. To prove this absoluteness, several experiments were conducted to measure the electrostatic force between two electric charges fixed at the same distance. If the isotropy of space is satisfied, a stationary system can be defined. Conversely, it is defined as a constant velocity system. In the inertial system, the relativity between observers and absoluteness of the inertial system coexist.","PeriodicalId":39047,"journal":{"name":"Journal of Electrical and Electronics Engineering","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82329519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-20DOI: 10.37256/jeee.2120232132
R. K. Kammeugne, C. Leroux, C. Theodorou, L. Vauche, M. Charles, E. Bano, G. Ghibaudo
In this study, a detailed on-wafer (or global) variability analysis of drain current characteristics of GaN MIS-HEMT devices grown on 200 mm silicon substrate is conducted. For the first time to our knowledge, the on-wafer variability sources in GaN technologies due to the manufacturing process are investigated by combining experimental data and analytical variability modeling. The key parameters which affect the variability are oxide the interface charge fluctuations, the mobility fluctuations, the gate oxide thickness and/or the gate area variations and the access resistance fluctuations in the contact as well as in the 2DEG regions (source and drain sides). Due the specificity of GaN MIS HEMT device engineering process, we show that their variability performances are not, for the time being, comparable to the state-of-the art silicon CMOS technologies, and this can be valuable for reliable improvement and optimization of GaN technology fabrication process. This study has been verified over a large range of channel gate lengths for three normally-off GaN MIS-HEMT wafers and having different gate process flows.
在本研究中，对生长在200毫米硅衬底上的GaN MIS-HEMT器件的漏极电流特性进行了详细的片上(或全局)可变性分析。据我们所知，这是第一次通过结合实验数据和分析变异性模型来研究氮化镓技术中由于制造过程而引起的晶圆上变异性来源。影响变异性的关键参数是氧化物、界面电荷波动、迁移率波动、栅极氧化物厚度和/或栅极面积变化以及接触区和2DEG区域(源侧和漏侧)的接入电阻波动。由于GaN MIS HEMT器件工程工艺的特殊性，我们表明它们的可变性性能暂时无法与最先进的硅CMOS技术相媲美，这对于GaN技术制造工艺的可靠改进和优化具有重要价值。这项研究已经在三个正常关闭的GaN mish - hemt晶圆的大范围沟道栅极长度上进行了验证，并且具有不同的栅极工艺流程。
{"title":"On-Wafer Drain Current Variability in GaN MIS-HEMT on 200-mm Silicon Substrates","authors":"R. K. Kammeugne, C. Leroux, C. Theodorou, L. Vauche, M. Charles, E. Bano, G. Ghibaudo","doi":"10.37256/jeee.2120232132","DOIUrl":"https://doi.org/10.37256/jeee.2120232132","url":null,"abstract":"In this study, a detailed on-wafer (or global) variability analysis of drain current characteristics of GaN MIS-HEMT devices grown on 200 mm silicon substrate is conducted. For the first time to our knowledge, the on-wafer variability sources in GaN technologies due to the manufacturing process are investigated by combining experimental data and analytical variability modeling. The key parameters which affect the variability are oxide the interface charge fluctuations, the mobility fluctuations, the gate oxide thickness and/or the gate area variations and the access resistance fluctuations in the contact as well as in the 2DEG regions (source and drain sides). Due the specificity of GaN MIS HEMT device engineering process, we show that their variability performances are not, for the time being, comparable to the state-of-the art silicon CMOS technologies, and this can be valuable for reliable improvement and optimization of GaN technology fabrication process. This study has been verified over a large range of channel gate lengths for three normally-off GaN MIS-HEMT wafers and having different gate process flows.","PeriodicalId":39047,"journal":{"name":"Journal of Electrical and Electronics Engineering","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81143529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-04DOI: 10.37256/jeee.2120231848
Sehtab Hossain, Md Arif Iqbal, Prerana Samant, M. Siddiki, Mostafizur Rahman
The miniaturization of the transistor sizes to keep up with Moore's Law in Integrated Circuits (ICs) is rapidly approaching the physical limits. To push the horizons of Moore's Law, among the various approaches available in the literature, single device-based computing shows promise by achieving more functionality in a smaller footprint. However, a single device-based computing approach either mainly embeds only the primitive logic hence inefficient in performance, or requires exotic devices like spin logic devices, and memristor which involve non-conventional costly manufacturing steps. Previously, we introduced the concept of embedding logic in a single device based on Crosstalk Computing, where deterministic signal interference between nano-metal lines is leveraged for logic computation. This paper elaborates upon the methodology of realizing complex Boolean functions through TCAD-based modeling and simulations, quantifying results, and compares against existing approaches. Core to our approach is a multi-gate Junctionless FET-based device, methodical placement of the independent gates, manipulation of device parameters, and dimension. This paper shows the implementation of various complex logic functions along with the primitive gates in the proposed device. Our benchmark results show 8x density benefits and 8x less power consumption on average than CMOS-based implementation. For the case of delay, elementary and complex logic devices show comparable characteristics with 14 nm PTM counterparts. Such realization of complex functions in a stand-alone device is compatible with the existing fabrication process.
{"title":"More Than a Device: Function Implementation in a Multi-Gate Junctionless FET Structure","authors":"Sehtab Hossain, Md Arif Iqbal, Prerana Samant, M. Siddiki, Mostafizur Rahman","doi":"10.37256/jeee.2120231848","DOIUrl":"https://doi.org/10.37256/jeee.2120231848","url":null,"abstract":"The miniaturization of the transistor sizes to keep up with Moore's Law in Integrated Circuits (ICs) is rapidly approaching the physical limits. To push the horizons of Moore's Law, among the various approaches available in the literature, single device-based computing shows promise by achieving more functionality in a smaller footprint. However, a single device-based computing approach either mainly embeds only the primitive logic hence inefficient in performance, or requires exotic devices like spin logic devices, and memristor which involve non-conventional costly manufacturing steps. Previously, we introduced the concept of embedding logic in a single device based on Crosstalk Computing, where deterministic signal interference between nano-metal lines is leveraged for logic computation. This paper elaborates upon the methodology of realizing complex Boolean functions through TCAD-based modeling and simulations, quantifying results, and compares against existing approaches. Core to our approach is a multi-gate Junctionless FET-based device, methodical placement of the independent gates, manipulation of device parameters, and dimension. This paper shows the implementation of various complex logic functions along with the primitive gates in the proposed device. Our benchmark results show 8x density benefits and 8x less power consumption on average than CMOS-based implementation. For the case of delay, elementary and complex logic devices show comparable characteristics with 14 nm PTM counterparts. Such realization of complex functions in a stand-alone device is compatible with the existing fabrication process.","PeriodicalId":39047,"journal":{"name":"Journal of Electrical and Electronics Engineering","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87484163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-27DOI: 10.37256/jeee.1120221926
Kriti Rai Saini, Shailesh Rajput, Yoon S. Choi
As transistors are scaled down to keep up with Moore's law, the semiconductor industry is facing several challenges due to the limitation of traditional Metal Oxide Semiconductor Field Effect Transistor (MOSFET) technology. To overcome this issue of scalability, various other technologies are being researched. Among them are Carbon Nano-Tube Field Effect Transistors (CNTFET), Ribbon Field Effect Transistors (RibbonFET), Graphene Nanoribbon Field Effect Transistor (GNRFET), and Fin shaped Field Effect Transistor (FinFET), which can substitute MOSFETs. Due to carbon nanotubes' excellent conductivity supremacy, CNTFETs are a promising new solution. However, implementing a CNTFET and making circuits from it is still challenging as CNTFETs can exhibit properties of both semiconductor and metal depending on various parameters. This paper will illustrate the characteristics of the CNTFET, compare the power consumption and propagation delay of basic logic gates made using the CNTFET and MOSFET technology. The parameter tuning is done by measuring the power and delay for all parameter values. The Simulation of CNTFET is done on the Stanford CNTFET model using H-Spice.
{"title":"Performance Optimization of Carbon Nano-Tube Field Effect Transistors by Tuning Parameters","authors":"Kriti Rai Saini, Shailesh Rajput, Yoon S. Choi","doi":"10.37256/jeee.1120221926","DOIUrl":"https://doi.org/10.37256/jeee.1120221926","url":null,"abstract":"As transistors are scaled down to keep up with Moore's law, the semiconductor industry is facing several challenges due to the limitation of traditional Metal Oxide Semiconductor Field Effect Transistor (MOSFET) technology. To overcome this issue of scalability, various other technologies are being researched. Among them are Carbon Nano-Tube Field Effect Transistors (CNTFET), Ribbon Field Effect Transistors (RibbonFET), Graphene Nanoribbon Field Effect Transistor (GNRFET), and Fin shaped Field Effect Transistor (FinFET), which can substitute MOSFETs. Due to carbon nanotubes' excellent conductivity supremacy, CNTFETs are a promising new solution. However, implementing a CNTFET and making circuits from it is still challenging as CNTFETs can exhibit properties of both semiconductor and metal depending on various parameters. This paper will illustrate the characteristics of the CNTFET, compare the power consumption and propagation delay of basic logic gates made using the CNTFET and MOSFET technology. The parameter tuning is done by measuring the power and delay for all parameter values. The Simulation of CNTFET is done on the Stanford CNTFET model using H-Spice.","PeriodicalId":39047,"journal":{"name":"Journal of Electrical and Electronics Engineering","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84608704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-19DOI: 10.37256/jeee.1120221687
M. Spohn
The Publish/Subscribe (P/S) paradigm plays an essential role in developing Internet of Things (IoT) applications. Among the most representative P/S protocols, there is Message Queuing Telemetry Transport (MQTT). Standard implementations employ a single server acting as a broker for client-to-client communication: publishers send messages to the broker, which forwards them to the subscribers. A single server is a single point of failure and a potential bottleneck. Most IoT applications require a reliable and scalable communication system. MQTT systems can evolve in such requirements through clustering or federation of brokers, resulting in more complex communication architectures. This work presents an overview of current issues and solutions for addressing MQTT scalability in the IoT context.
{"title":"On MQTT Scalability in the Internet of Things: Issues, Solutions, and Future Directions","authors":"M. Spohn","doi":"10.37256/jeee.1120221687","DOIUrl":"https://doi.org/10.37256/jeee.1120221687","url":null,"abstract":"The Publish/Subscribe (P/S) paradigm plays an essential role in developing Internet of Things (IoT) applications. Among the most representative P/S protocols, there is Message Queuing Telemetry Transport (MQTT). Standard implementations employ a single server acting as a broker for client-to-client communication: publishers send messages to the broker, which forwards them to the subscribers. A single server is a single point of failure and a potential bottleneck. Most IoT applications require a reliable and scalable communication system. MQTT systems can evolve in such requirements through clustering or federation of brokers, resulting in more complex communication architectures. This work presents an overview of current issues and solutions for addressing MQTT scalability in the IoT context.","PeriodicalId":39047,"journal":{"name":"Journal of Electrical and Electronics Engineering","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76167702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-18DOI: 10.37256/jeee.1120221681
Yahui Wu, Lukui Jin, Zhenxiong Xie
This paper presents a design of dielectric waveguide filter using dual-mode dielectric waveguide resonators (DWRs). The filter is formed by a ceramic monoblock, thus it is compact and ease of fabrication. The employed degenerate modes of DWR are TE101 and TE011 mode, which can be coupled by a slot on the dielectric block. The coupling between a dual-mode DWR and a single-mode DWR is realized by aperture and slot. The external coupling is realized by a silver-coated blind hole that aligns to the mode for excitation. Transmission zero (TZ) can be flexibly generated above or below passband, by changing the relative position of coupling slot. A sixth order bandpass filter working at 4.9 GHz is designed using dual- and single-mode DWRs. The filter is fabricated and measured, agreeing well with simulation. This filter has compact size, low insertion loss, good selectivity and wide spurious-free response, which is applicable to 5G base stations.
{"title":"Dual-Mode Dielectric Waveguide Monoblock Filter Design","authors":"Yahui Wu, Lukui Jin, Zhenxiong Xie","doi":"10.37256/jeee.1120221681","DOIUrl":"https://doi.org/10.37256/jeee.1120221681","url":null,"abstract":"This paper presents a design of dielectric waveguide filter using dual-mode dielectric waveguide resonators (DWRs). The filter is formed by a ceramic monoblock, thus it is compact and ease of fabrication. The employed degenerate modes of DWR are TE101 and TE011 mode, which can be coupled by a slot on the dielectric block. The coupling between a dual-mode DWR and a single-mode DWR is realized by aperture and slot. The external coupling is realized by a silver-coated blind hole that aligns to the mode for excitation. Transmission zero (TZ) can be flexibly generated above or below passband, by changing the relative position of coupling slot. A sixth order bandpass filter working at 4.9 GHz is designed using dual- and single-mode DWRs. The filter is fabricated and measured, agreeing well with simulation. This filter has compact size, low insertion loss, good selectivity and wide spurious-free response, which is applicable to 5G base stations.","PeriodicalId":39047,"journal":{"name":"Journal of Electrical and Electronics Engineering","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77721116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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