Pub Date : 1900-01-01DOI: 10.1016/B978-0-08-102430-0.00004-8
Takao Shimizu, H. Funakubo
{"title":"Epitaxial Growth of Doped HfO2 Ferroelectric Materials","authors":"Takao Shimizu, H. Funakubo","doi":"10.1016/B978-0-08-102430-0.00004-8","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00004-8","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133513664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1016/B978-0-08-102430-0.00013-9
M. Park, Michael J. Hoffmann, C. Hwang
{"title":"Pyroelectric and Electrocaloric Effects and Their Applications","authors":"M. Park, Michael J. Hoffmann, C. Hwang","doi":"10.1016/B978-0-08-102430-0.00013-9","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00013-9","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121912443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1016/B978-0-08-102430-0.00009-7
A. Toriumi, L. Xu, S. Shibayama, S. Migita
{"title":"Ferroelectric Films by Physical Vapor Deposition and Ion Implantation","authors":"A. Toriumi, L. Xu, S. Shibayama, S. Migita","doi":"10.1016/B978-0-08-102430-0.00009-7","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00009-7","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125939047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1016/b978-0-08-102430-0.00020-6
M. Pešić, U. Schroeder
{"title":"Antiferroelectric One Transistor/One Capacitor Memory Cell","authors":"M. Pešić, U. Schroeder","doi":"10.1016/b978-0-08-102430-0.00020-6","DOIUrl":"https://doi.org/10.1016/b978-0-08-102430-0.00020-6","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124331073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1016/B978-0-08-102430-0.00024-3
E. Breyer, S. Slesazeck
{"title":"Ferroelectric Devices for Logic in Memory","authors":"E. Breyer, S. Slesazeck","doi":"10.1016/B978-0-08-102430-0.00024-3","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00024-3","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123542731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1016/B978-0-08-102430-0.00018-8
M. Pešić, L. Larcher
{"title":"Modeling of Field Cycling Behavior of Ferroelectric Hafnia-Based Capacitors","authors":"M. Pešić, L. Larcher","doi":"10.1016/B978-0-08-102430-0.00018-8","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00018-8","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124718171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1016/B978-0-08-102430-0.00019-X
M. Pešić, U. Schroeder, T. Mikolajick
{"title":"Ferroelectric One Transistor/One Capacitor Memory Cell","authors":"M. Pešić, U. Schroeder, T. Mikolajick","doi":"10.1016/B978-0-08-102430-0.00019-X","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00019-X","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"258 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122889341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1016/B978-0-08-102430-0.00015-2
E. Grimley, J. Lebeau
{"title":"Transmission Electron Microscopy (STEM and TEM)","authors":"E. Grimley, J. Lebeau","doi":"10.1016/B978-0-08-102430-0.00015-2","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00015-2","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126343300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1016/B978-0-08-102430-0.00011-5
M. Park, T. Schenk, S. Starschich, C. Fancher, Han Joon Kim, U. Böttger, C. Hwang, A. Toriumi, X. Tian, U. Schroeder
{"title":"Effect of Surface/Interface Energy and Stress on the Ferroelectric Properties","authors":"M. Park, T. Schenk, S. Starschich, C. Fancher, Han Joon Kim, U. Böttger, C. Hwang, A. Toriumi, X. Tian, U. Schroeder","doi":"10.1016/B978-0-08-102430-0.00011-5","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00011-5","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"212 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134088673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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