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2014 IEEE Computer Society Annual Symposium on VLSI最新文献

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Network-on-Chip Design for Heterogeneous Multiprocessor System-on-Chip 异构多处理器片上系统的片上网络设计
Pub Date : 2014-07-09 DOI: 10.1109/ISVLSI.2014.96
Bharath Phanibhushana, S. Kundu
With burgeoning growth of mobile systems, multiprocessor System-on-Chip (MPSoC) connected via Network-on-Chip (NoC) has become ubiquitous. A typical MPSoC in mobile applications consists of multiple CPU cores of varying capabilities, GPU cores, DSP cores, and crypto accelerators and such cores differ widely in their physical size and their bandwidth requirements. Traditional mesh based NoC systems work well for regular structures, but do not map well to heterogeneous MPSoCs. In MPSoC programming model, an application consists of tasks, that represent a unit of work on a core which can be executed asynchronously. The communication between tasks is represented in the form of a directed acyclic graph. The temporal burstness of data which arise from programming model provide opportunity for multiplexing communication between cores, which may be advantageous in reducing network size. Often a task graph needs to meet a real-time deadline. The actual execution time may vary based on the application data. The uncertainty in the execution time may be modeled by a statistical distribution, which further complicates the NoC design. In this paper, we present a synthesis method for hierarchical design of NoC for a given task graph system deadline, that optimizes for router area. A 2-phase design flow is proposed, which consists of topology generation and statistical analysis in an iterative loop. We adopt proportion of Monte-Carlo test cases that meet the deadline as a metric for goodness. The proposed solution is compared against static design approach and simulated annealing (SA) based network generation. On an average, a performance benefit of 10% over SA, 16% over standard mesh and 30% over static design was obtained and a total router area benefit of 59% over SA, 48% over mesh and 55% over static design was observed.
随着移动系统的迅速发展,通过片上网络(NoC)连接的多处理器片上系统(MPSoC)已经变得无处不在。移动应用中典型的MPSoC由多个不同功能的CPU核心、GPU核心、DSP核心和加密加速器组成,这些核心在物理大小和带宽需求方面差异很大。传统的基于网格的NoC系统可以很好地适应规则结构,但不能很好地映射到异构mpsoc。在MPSoC编程模型中,应用程序由任务组成,这些任务代表核心上可以异步执行的工作单元。任务之间的通信以有向无环图的形式表示。由编程模型产生的数据的时间突发性为核心间的多路通信提供了机会,这可能有利于减小网络规模。任务图通常需要满足实时截止日期。实际执行时间可能根据应用程序数据而有所不同。执行时间的不确定性可以通过统计分布来建模,这进一步增加了NoC设计的复杂性。在给定任务图系统期限下,提出了一种针对路由器区域进行优化的NoC分层设计的综合方法。提出了一种由拓扑生成和统计分析组成的两阶段迭代设计流程。我们采用满足截止日期的蒙特卡罗测试用例的比例作为良度的度量。将该方法与静态设计方法和基于模拟退火(SA)的网络生成方法进行了比较。平均而言,与SA相比,性能优势为10%,与标准网状结构相比,优势为16%,与静态设计相比,优势为30%;与SA相比,总路由器面积优势为59%,与网状结构相比,优势为48%,与静态设计相比,优势为55%。
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引用次数: 5
Multi-level, Memory-Based Logic Using CMOS Technology 基于CMOS技术的多级存储器逻辑
Pub Date : 2014-07-09 DOI: 10.1109/ISVLSI.2014.91
Indira Dugganapally, S. Watkins, B. Cooper
A memory-based approach is described for performing basic logic gate functions. CMOS transistors are used in a non-traditional way for multi-level operations and memory manipulation. Sense amplifier circuits drive an array of pass amplifiers in which memory values are set by reference connections. The combination of multi-level architectures and matrix algebra principles can create flexible, modular systems using standard fabrication methods. Logic gate functions of AND, OR, NAND, and NOR are implemented in quaternary, memory-based architectures. The circuit layouts and functional simulations are given and are compared to those of similar binary circuits. Experimental performance of a hardware AND chip is also demonstrated. The approach requires more chip area for basic logic gates, but it grows increasingly efficient for more complex systems through hardware reuse. The benefits and feasibility of more complex applications are discussed.
描述了一种用于执行基本逻辑门功能的基于内存的方法。CMOS晶体管以非传统的方式用于多级操作和存储器操作。感测放大器电路驱动一组通放,其中的存储器值由参考连接设定。多层体系结构和矩阵代数原理的结合可以使用标准的制造方法创建灵活的模块化系统。与、或、NAND和NOR的逻辑门功能在基于存储器的四元结构中实现。给出了电路布局和功能仿真,并与同类二进制电路进行了比较。并对硬件与芯片的实验性能进行了验证。该方法需要更多的芯片面积用于基本逻辑门,但通过硬件重用,它在更复杂的系统中变得越来越高效。讨论了更复杂应用的好处和可行性。
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引用次数: 6
Buffering Single-Walled Carbon Nanotubes Bundle Interconnects for Timing Optimization 缓冲单壁碳纳米管束互连的时间优化
Pub Date : 2014-07-09 DOI: 10.1109/ISVLSI.2014.35
Lin Liu, Yuchen Zhou, Shiyan Hu
As prevailing copper interconnect technology advances to its fundamental physical limit, interconnect delay due to ever-increasing wire resistivity has greatly limited the circuit miniaturization. Single-walled carbon nanotubes (SWCNTs) bundle interconnects have emerged as a promising replacement material for copper interconnects due to their superior conductivity. Previous works have focused on studying device and interconnect modeling for bundled SWCNTs while none of them consider deployment of such an advanced technology into VLSI physical design. To the best of the authors' knowledge, this paper develops the first physical design technique for the interconnect optimization using carbon nanotube interconnects. We propose a timing driven buffer insertion technique for bundled SWCNTs, where the standard buffering algorithm has been enhanced to accommodate some features in the SWCNT timing modelling. Our experimental results on a set of scaled industrial nets at 22nm technology demonstrate that compared to copper buffering, CNT buffering can save over 50% buffer area with the same timing constraint. In addition, CNT buffering can effectively reduce the delay by up to 32%. Further, CNT buffering runs in time similar to copper buffering.
随着铜线互连技术发展到其基本物理极限,由于导线电阻率不断增加而导致的互连延迟极大地限制了电路的小型化。单壁碳纳米管(SWCNTs)束互连由于其优异的导电性而成为一种很有前途的铜互连替代材料。先前的工作主要集中在研究捆绑式SWCNTs的器件和互连建模,而没有一项工作考虑将这种先进技术部署到VLSI物理设计中。据作者所知,本文开发了第一个利用碳纳米管互连优化互连的物理设计技术。我们提出了一种用于捆绑SWCNTs的定时驱动缓冲器插入技术,其中对标准缓冲算法进行了改进,以适应SWCNTs定时建模中的一些特征。我们在一组22nm工业网络上的实验结果表明,与铜缓冲相比,碳纳米管缓冲在相同的时间约束下可以节省50%以上的缓冲面积。此外,碳纳米管缓冲可以有效地减少延迟高达32%。此外,碳纳米管缓冲在时间上的运行类似于铜缓冲。
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引用次数: 3
Reconfigurable Dynamic Trusted Platform Module for Control Flow Checking 控制流检查的可重构动态可信平台模块
Pub Date : 2014-07-09 DOI: 10.1109/ISVLSI.2014.84
Sanjeev Das, Wei Zhang, Yang Liu
Trusted Platform Module (TPM) has gained its popularity in computing systems as a hardware security approach. TPM provides the boot time security by verifying the platform integrity including hardware and software. However, once the software is loaded, TPM can no longer protect the software execution. In this work, we propose a dynamic TPM design, which performs control flow checking to protect the program from runtime attacks. The control flow checker is integrated at the commit stage of the processor pipeline. The control flow of program is verified to defend the attacks such as stack smashing using buffer overflow and code reuse. We implement the proposed dynamic TPM design in FPGA to achieve high performance, low cost and flexibility for easy functionality upgrade based on FPGA. In our design, neither the source code nor the Instruction Set Architecture (ISA) needs to be changed. The benchmark simulations demonstrate less than 1% of performance penalty on the processor, and an effective software protection from the attacks.
可信平台模块(TPM)作为一种硬件安全方法在计算系统中得到了广泛的应用。TPM通过验证包括硬件和软件在内的平台完整性来提供引导时安全性。但是,一旦软件被加载,TPM就不能再保护软件的执行。在这项工作中,我们提出了一个动态TPM设计,它执行控制流检查以保护程序免受运行时攻击。控制流检查器集成在处理器管道的提交阶段。验证了程序的控制流程能够抵御利用缓冲区溢出破坏栈和代码重用等攻击。我们在FPGA中实现了动态TPM设计,实现了基于FPGA的高性能、低成本和灵活的功能升级。在我们的设计中,源代码和指令集架构(ISA)都不需要更改。基准模拟表明,处理器的性能损失不到1%,并且有效地保护了软件免受攻击。
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引用次数: 8
2D to 3D Test Pattern Retargeting Using IEEE P1687 Based 3D DFT Architectures 基于IEEE P1687的3D DFT架构的2D到3D测试模式重定位
Pub Date : 2014-07-09 DOI: 10.1109/ISVLSI.2014.83
Yassine Fkih, P. Vivet, B. Rouzeyre, M. Flottes, G. D. Natale, J. Schlöffel
Design For Test (DFT) of 3D stacked integrated circuits based on Through Silicon Vias (TSVs) is one of the hot topics in the field of test of integrated circuits. This is due to the hard test accessibility (especially for upper dies) and to the high complexity where each die can embed hundreds of IPs. In this paper we propose a DFT architecture based on IEEE P1687 to enable the test of 3D stacked ICs. The proposed test architecture allows the test at all 3D fabrication levels: pre-, mid-, and postbond levels. We present a test pattern retargeting flow using IEEE P1687 languages ICL (Instrument Connectivity Language) and PDL (Procedural Description Language), which allows easy retargeting from 2D (die-level) to 3D (stack-level). Compared to IEEE 1149.1 based 3D test architecture, our proposed 3D test architecture is more flexible and enhances test concurrency without an additional area cost.
基于硅通孔(tsv)的三维堆叠集成电路测试设计(DFT)是集成电路测试领域的研究热点之一。这是由于硬测试可访问性(特别是对于上模组)以及每个模组可以嵌入数百个ip的高复杂性。本文提出了一种基于IEEE P1687的DFT架构,以实现3D堆叠集成电路的测试。提出的测试架构允许在所有3D制造级别进行测试:粘合前,粘合中和粘合后级别。我们提出了一个使用IEEE P1687语言ICL(仪器连接语言)和PDL(过程描述语言)的测试模式重定向流程,它允许从2D(模级)重定向到3D(堆栈级)。与基于IEEE 1149.1的3D测试架构相比,我们提出的3D测试架构更加灵活,并且在不增加额外面积成本的情况下增强了测试并发性。
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引用次数: 14
Toward Holistic Modeling, Margining and Tolerance of IC Variability 集成电路可变性的整体建模、边际和容忍度
Pub Date : 2014-07-09 DOI: 10.1109/ISVLSI.2014.118
A. Kahng
The 2013 edition of the International Technology Roadmap for Semiconductors [10] highlights a slowdown of traditional pitch and density scaling in leading-edge patterning technologies. Through the foundry N5/N7 nodes, the roadmap also projects unfavorable scaling of device and interconnect electrical performance (drive vs. leakage, resistivity, capacitive coupling, etc.). IC product value is also challenged by increasingly dominant variability mechanisms ranging from lithography and planarization in manufacturing, to dynamic voltage droop and aging in the field. Design teams compensate variability with margin (guardbanding), but this substantially reduces the value of designs at the next technology node. In this context, it is increasingly critical to deliver design-based equivalent scaling through novel design technologies. This paper reviews recent research directions that seek to improve modeling, margining and tolerance of IC variability. Collectively, these design methods offer new means by which product companies can extract greater value from available technologies, even as traditional scaling slows for patterning, devices and interconnects.
2013年版的国际半导体技术路线图[10]强调了在领先的图形化技术中传统的间距和密度缩放的放缓。通过代工N5/N7节点,该路线图还预测了器件和互连电气性能(驱动vs漏电、电阻率、电容耦合等)的不利扩展。IC产品价值也受到越来越多的可变性机制的挑战,从制造中的光刻和平面化,到现场的动态电压下降和老化。设计团队用边际补偿可变性,但这实质上降低了设计在下一个技术节点的价值。在这种情况下,通过新颖的设计技术提供基于设计的等效缩放变得越来越重要。本文综述了近期寻求改进集成电路变异性的建模、边际和容忍度的研究方向。总的来说,这些设计方法为产品公司提供了新的手段,通过这些方法,产品公司可以从现有技术中提取更大的价值,即使传统的扩展速度减缓了模式、设备和互连。
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引用次数: 1
Experiments with High Speed Parallel Cubing Units 高速平行立方单元实验
Pub Date : 2014-07-09 DOI: 10.1109/ISVLSI.2014.97
Son Bui, J. Stine, M. Sadeghian
This paper discusses modification to algorithms for computing within a parallel cubing unit. The algorithms discussed in this paper shows several architectures for various operand sizes ranging from 8 to 32 bits. The method proposed in this paper separates the cubing partial product matrix into smaller elements and organizes these partial products into repeatable manageable groups. Consequently, the overall partial product matrix is substantially reduced from previous methods. An algorithmic analysis is also presented that demonstrates reduction in area and delay for several operand widths as well as their implementations in a Vitex 5 Xilinx FPGAs and for IBM 65nm ASIC standard-cell library.
本文讨论了对并行立方体单元内计算算法的修改。本文讨论的算法显示了适用于从8位到32位的不同操作数大小的几种体系结构。本文提出的方法是将三次偏积矩阵分解成更小的元素,并将这些偏积组织成可重复管理的组。因此,整体偏积矩阵从以前的方法大大减少。本文还提出了一种算法分析,证明了几种操作数宽度的面积和延迟的减少,以及它们在Vitex 5 Xilinx fpga和IBM 65nm ASIC标准单元库中的实现。
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引用次数: 6
High Mobility n and p Channels on Gallium Arsenide and Silicon Substrates Using Interfacial Misfit Dislocation Arrays 基于界面错配位错阵列的砷化镓和硅衬底上的高迁移率n和p通道
Pub Date : 2014-07-09 DOI: 10.1109/ISVLSI.2014.99
D. Shima, G. Balakrishnan
We demonstrate the growth of III-Sb buffers on GaAs and Silicon substrates through the use of an epitaxial technique involving the formation of interfacial misfit dislocation arrays that is formed between the III-Sb alloy and the substrate. The interfacial misfit array results in the spontaneous relaxation of the highly mismatched III-Sb semiconductor and provides a platform for the realization of high mobility channels on GaAs and Silicon. We make use of InAs type -- II confinement structures for n-type and pseudomorphic InGaSb type -- I structures for p-type channels.
我们展示了III-Sb缓冲液在GaAs和硅衬底上的生长,通过使用涉及在III-Sb合金和衬底之间形成界面错配位错阵列的外延技术。界面失配阵列导致高度失配的III-Sb半导体的自发弛豫,为在GaAs和硅上实现高迁移率通道提供了平台。我们在n型沟道中使用InAs - II型约束结构,在p型沟道中使用伪晶InGaSb - I型结构。
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引用次数: 0
Methodical Design Approaches to Radiation Effects Analysis and Mitigation in Flip-Flop Circuits 触发器电路中辐射效应分析和缓解的方法设计方法
Pub Date : 2014-07-09 DOI: 10.1109/ISVLSI.2014.74
L. Clark, Sandeep Shambhulingaiah
With transistor dimensions shrinking due to continued scaling, integrated circuits are increasingly susceptible to radiation upset. This paper presents a systematic methodology for evaluating circuit hardness, as well as graph clustering approaches to determine effective node separation to protect against upset due to multiple node charge collection. The methodology is circuit simulation based, making it efficient and usable by circuit designers. Example designs are presented to demonstrate the analysis and clustering for real flip-flop designs. Finally, the methodology is utilized to provide critical node separation for a new hardened flip-flop design that reduces the power and area by 27% and 19.5% respectively.
随着晶体管尺寸的不断缩小,集成电路越来越容易受到辐射干扰。本文提出了一种评估电路硬度的系统方法,以及图聚类方法来确定有效的节点分离,以防止由于多节点电荷收集而造成的破坏。该方法是基于电路仿真,使其高效和可用的电路设计。通过实例设计说明了对实际触发器设计的分析和聚类。最后,利用该方法为一种新的硬化触发器设计提供关键节点分离,该设计分别将功率和面积降低27%和19.5%。
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引用次数: 6
Regulator-Gating Methodology with Distributed Switched Capacitor Voltage Converters 分布式开关电容电压变换器的调节器门控方法
Pub Date : 2014-07-09 DOI: 10.1109/ISVLSI.2014.111
Orhun Aras Uzun, Selçuk Köse
One of the primary challenges with fully integratedvoltage regulation is to maintain a high power efficiency overa wide output current range. A multiphase distributed switchedcapacitor (SC) converter with a new control method that adaptivelyturns on and off certain interleaved stages is proposed. By controlling the number of active interleaved stages basedon the load current, the proposed system achieves a higherpower efficiency for lower output currents, forcing active stagesto operate at highest possible power efficiency. By distributingthe interleaved stages, lower IR and Ldi/dt drop is achieved.
完全集成电压调节的主要挑战之一是在宽输出电流范围内保持高功率效率。提出了一种多相分布式开关电容器(SC)变换器,该变换器采用了一种新的控制方法,可以自适应地开关若干交错级。通过根据负载电流控制有源交错级的数量,所提出的系统在较低的输出电流下实现了更高的功率效率,迫使有源级以尽可能高的功率效率运行。通过分配交错级,实现了较低的IR和Ldi/dt下降。
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引用次数: 8
期刊
2014 IEEE Computer Society Annual Symposium on VLSI
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