Pub Date : 2018-10-01DOI: 10.1109/ICSENS.2018.8630281
A. A. Altahir, V. Asirvadam, N. H. Hamid, P. Sebastian, N. Saad, S. Dass
Optimizing the camera configurations impacts the performance of the video surveillance applications. Where, proper camera placement reduces the total cost and increases the surveillance efficiency. Various methods are used to optimize the coverage such as greedy search and linear programming, hence the typical cost function for optimizing the camera placement focuses on obtaining the maximum coverage regardless of the area significance or the camera capabilities. This work proposes a novel cost function for camera placement problem. The proposed approach models the camera vision capability based on the task to be performed. The model represents the significance of the monitored area by means of risk maps. Then the coverage optimization is performed based on the area significance modeling results and the sensor capability. The outcomes show the applicability of the proposed cost function in various scenarios.
{"title":"Optimizing Camera Placement Based on Task Modeling","authors":"A. A. Altahir, V. Asirvadam, N. H. Hamid, P. Sebastian, N. Saad, S. Dass","doi":"10.1109/ICSENS.2018.8630281","DOIUrl":"https://doi.org/10.1109/ICSENS.2018.8630281","url":null,"abstract":"Optimizing the camera configurations impacts the performance of the video surveillance applications. Where, proper camera placement reduces the total cost and increases the surveillance efficiency. Various methods are used to optimize the coverage such as greedy search and linear programming, hence the typical cost function for optimizing the camera placement focuses on obtaining the maximum coverage regardless of the area significance or the camera capabilities. This work proposes a novel cost function for camera placement problem. The proposed approach models the camera vision capability based on the task to be performed. The model represents the significance of the monitored area by means of risk maps. Then the coverage optimization is performed based on the area significance modeling results and the sensor capability. The outcomes show the applicability of the proposed cost function in various scenarios.","PeriodicalId":405874,"journal":{"name":"2018 IEEE SENSORS","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125063082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/ICSENS.2018.8589651
Arnab Banerjee, T. K. Bhattacharyya, S. Nag
Bioelectronic implants have advanced significantly to aid in prostheses and rehabilitation, such as for sensory and motor functions restoration. These implants mainly constitute wireless power transfer, biopotential sensing or electrical stimulation, which invite the risk of localized heating surrounding the implanted hardware. In this paper, a smart $pmb{0.18} mu mathbf{m}$ CMOS technology based implantable temperature sensor has been proposed that can be incorporated alongside an implant. The sensor instinctively responds to an unusual temperature fluctuation near the implant and can shut down the system automatically so as to passively regain normal body temperature. The sensor chip has been designed to operate in the region of $pm pmb{1} ^{circ}mathbf{C}$ from base temperature of 37°C (normal human body temperature). The system operates on the basic principle of difference in temperature coefficient between two types of resistor. The proposed sensor consumes only $pmb{10} mu mathbf{A}$ current at 2.4 V supply voltage. The sensor has shown reliable performance for simulation process corners and can operate over a wide DC supply voltage range of 2.4 V to 3.6 V.
生物电子植入物在帮助修复和康复方面取得了重大进展，例如感觉和运动功能的恢复。这些植入物主要由无线电力传输、生物电位传感或电刺激构成，这些植入物会带来植入硬件周围局部发热的风险。在本文中，提出了一种基于CMOS技术的智能$pmb{0.18} mu mathbf{m}$植入式温度传感器，可以与植入物一起集成。传感器会本能地对植入物附近的异常温度波动做出反应，并自动关闭系统，从而被动地恢复正常体温。传感器芯片被设计为在$pm pmb{1} ^{circ}mathbf{C}$区域工作，基本温度为37°C(正常人体温度)。该系统是根据两种电阻器的温度系数差的基本原理工作的。该传感器在2.4 V电源电压下仅消耗$pmb{10} mu mathbf{A}$电流。该传感器在模拟过程拐角处表现出可靠的性能，可以在2.4 V至3.6 V的宽直流电源电压范围内工作。
{"title":"A Smart Temperature Sensor and Controller for Bioelectronic Implants","authors":"Arnab Banerjee, T. K. Bhattacharyya, S. Nag","doi":"10.1109/ICSENS.2018.8589651","DOIUrl":"https://doi.org/10.1109/ICSENS.2018.8589651","url":null,"abstract":"Bioelectronic implants have advanced significantly to aid in prostheses and rehabilitation, such as for sensory and motor functions restoration. These implants mainly constitute wireless power transfer, biopotential sensing or electrical stimulation, which invite the risk of localized heating surrounding the implanted hardware. In this paper, a smart $pmb{0.18} mu mathbf{m}$ CMOS technology based implantable temperature sensor has been proposed that can be incorporated alongside an implant. The sensor instinctively responds to an unusual temperature fluctuation near the implant and can shut down the system automatically so as to passively regain normal body temperature. The sensor chip has been designed to operate in the region of $pm pmb{1} ^{circ}mathbf{C}$ from base temperature of 37°C (normal human body temperature). The system operates on the basic principle of difference in temperature coefficient between two types of resistor. The proposed sensor consumes only $pmb{10} mu mathbf{A}$ current at 2.4 V supply voltage. The sensor has shown reliable performance for simulation process corners and can operate over a wide DC supply voltage range of 2.4 V to 3.6 V.","PeriodicalId":405874,"journal":{"name":"2018 IEEE SENSORS","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114007180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/ICSENS.2018.8589809
Lisa Sarkar, J. Joseph, S. Singh, S. Vanjari
This paper reports a thorough analysis on the viability of polyvinylidene difluoride (PVDF) as a membrane material for Piezoelectric Micromachined Ultrasonic Transducers using a well developed multiphysics finite element modeling approach. Key metrics such as frequency modes, membrane displacement sensitivity, generated acoustic pressure were analyzed not only for PVDF but also for other piezoelectric materials like Zinc Oxide (ZnO) and Aluminium Nitride (AIN). Based on the affirmative conclusions, fabrication of PMUT using PVDF as membrane material was carried out. One of the major bottlenecks encountered in the process is the poor adhesion between PVDF and metal. This generic issue not limited this particular process flow was resolved using simple chemical surface modification of metal surface. This resulted in the successful demonstration of PVDF based PMUT.
{"title":"Modeling and Fabrication Aspects of PVDF as a Membrane Material for Air Borne PMUT Applications","authors":"Lisa Sarkar, J. Joseph, S. Singh, S. Vanjari","doi":"10.1109/ICSENS.2018.8589809","DOIUrl":"https://doi.org/10.1109/ICSENS.2018.8589809","url":null,"abstract":"This paper reports a thorough analysis on the viability of polyvinylidene difluoride (PVDF) as a membrane material for Piezoelectric Micromachined Ultrasonic Transducers using a well developed multiphysics finite element modeling approach. Key metrics such as frequency modes, membrane displacement sensitivity, generated acoustic pressure were analyzed not only for PVDF but also for other piezoelectric materials like Zinc Oxide (ZnO) and Aluminium Nitride (AIN). Based on the affirmative conclusions, fabrication of PMUT using PVDF as membrane material was carried out. One of the major bottlenecks encountered in the process is the poor adhesion between PVDF and metal. This generic issue not limited this particular process flow was resolved using simple chemical surface modification of metal surface. This resulted in the successful demonstration of PVDF based PMUT.","PeriodicalId":405874,"journal":{"name":"2018 IEEE SENSORS","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121857777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/ICSENS.2018.8589749
Y. Yokoshiki, T. Nakamoto
Characterization of Field Asymmetric Ion Mobility Spectrometry (FAIMS) was studied with two experiments. First, acetone and diethyl ether were used to examine the relationship between concentration and ion current. The results show FAIMS has a nonlinear dependency on gas concentration. Then, binary mixture gases made up of acetone, and diethyl ether was measured. The result shows FAIMS has a nonlinear characteristic for gas mixture analysis because the output of binary mixture gas was not equal to the summation of the outputs obtained from single gases. Moreover, it is an interesting phenomenon that one gas (diethyl ether) suppressed the response to other gas (acetone).
{"title":"Characterization of Field Asymmetric Ion Mobility Spectrometry Response to Binary Gas Mixture","authors":"Y. Yokoshiki, T. Nakamoto","doi":"10.1109/ICSENS.2018.8589749","DOIUrl":"https://doi.org/10.1109/ICSENS.2018.8589749","url":null,"abstract":"Characterization of Field Asymmetric Ion Mobility Spectrometry (FAIMS) was studied with two experiments. First, acetone and diethyl ether were used to examine the relationship between concentration and ion current. The results show FAIMS has a nonlinear dependency on gas concentration. Then, binary mixture gases made up of acetone, and diethyl ether was measured. The result shows FAIMS has a nonlinear characteristic for gas mixture analysis because the output of binary mixture gas was not equal to the summation of the outputs obtained from single gases. Moreover, it is an interesting phenomenon that one gas (diethyl ether) suppressed the response to other gas (acetone).","PeriodicalId":405874,"journal":{"name":"2018 IEEE SENSORS","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121245236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/ICSENS.2018.8589869
Milind S. Pandit, Chun Zhao, G. Sobreviela, A. Seshia
Eigenstate variations in weakly coupled MEMS resonators have been shown to exhibit common mode rejection capabilities that make them immune to environmental fluctuations to first order. In contrast to previous work on this topic, this paper shows in-depth experimental characterization of the resonator system at a range of temperatures between 35°C and 60°C using amplitude ratio as the readout metric. An analysis is conducted on the impact of the cross-sensitivity to temperature variations on the input-referred stiffness perturbation for the resonator system and this is compared to the variations in the frequency shift output metric within the same device. These results show 2 orders of magnitude improvement in temperature immunity for the amplitude ratio readout metric as compared to the conventional frequency shift method.
{"title":"Immunity to Temperature Fluctuations in Weakly Coupled MEMS Resonators","authors":"Milind S. Pandit, Chun Zhao, G. Sobreviela, A. Seshia","doi":"10.1109/ICSENS.2018.8589869","DOIUrl":"https://doi.org/10.1109/ICSENS.2018.8589869","url":null,"abstract":"Eigenstate variations in weakly coupled MEMS resonators have been shown to exhibit common mode rejection capabilities that make them immune to environmental fluctuations to first order. In contrast to previous work on this topic, this paper shows in-depth experimental characterization of the resonator system at a range of temperatures between 35°C and 60°C using amplitude ratio as the readout metric. An analysis is conducted on the impact of the cross-sensitivity to temperature variations on the input-referred stiffness perturbation for the resonator system and this is compared to the variations in the frequency shift output metric within the same device. These results show 2 orders of magnitude improvement in temperature immunity for the amplitude ratio readout metric as compared to the conventional frequency shift method.","PeriodicalId":405874,"journal":{"name":"2018 IEEE SENSORS","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128038352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/ICSENS.2018.8589641
Meining Ji, Xiaofeng Meng, J. Nie, Yaqin Wang, Liwei Lin
This work demonstrates a novel bionics-based heartbeat sensor combined with approximate entropy (ApEn) algorithm for health warning. The design of the proposed sensor was inspired by pulse-taking therapy in traditional Chinese medicine (TCM). A flexible piezoelectric film was adhered to a wooden cylinder to simulate the structure of the finger to achieve pulse-taking. The simulation of piezoelectric film under different force area and bending degree was realized by ANSYS. The results showed that the sensor structure proposed in this paper can not only simulate the characteristics of the finger to achieve the TCM pulse-taking, but also improve the sensitivity of piezoelectric film. The sensor was used to measure the pulse signal of human under different states of motion and different health conditions. Then the sample data were analyzed using the ApEn. The results showed that the ApEn value is 0.1 can be used as a threshold for judging and predicting human health status. The experiment proved that this method can avoid the requirement of the same force in the traditional pulse-taking. It not only can obtain the low distortion pulse signal, but also can obtain the heart rate accurately. Using this method can quickly achieve rapid detection and early warning of human health.
{"title":"A New Type of Bionics Based Piezoelectric Heartbeat Sensor Used in Pulse-Taking for Health Warning","authors":"Meining Ji, Xiaofeng Meng, J. Nie, Yaqin Wang, Liwei Lin","doi":"10.1109/ICSENS.2018.8589641","DOIUrl":"https://doi.org/10.1109/ICSENS.2018.8589641","url":null,"abstract":"This work demonstrates a novel bionics-based heartbeat sensor combined with approximate entropy (ApEn) algorithm for health warning. The design of the proposed sensor was inspired by pulse-taking therapy in traditional Chinese medicine (TCM). A flexible piezoelectric film was adhered to a wooden cylinder to simulate the structure of the finger to achieve pulse-taking. The simulation of piezoelectric film under different force area and bending degree was realized by ANSYS. The results showed that the sensor structure proposed in this paper can not only simulate the characteristics of the finger to achieve the TCM pulse-taking, but also improve the sensitivity of piezoelectric film. The sensor was used to measure the pulse signal of human under different states of motion and different health conditions. Then the sample data were analyzed using the ApEn. The results showed that the ApEn value is 0.1 can be used as a threshold for judging and predicting human health status. The experiment proved that this method can avoid the requirement of the same force in the traditional pulse-taking. It not only can obtain the low distortion pulse signal, but also can obtain the heart rate accurately. Using this method can quickly achieve rapid detection and early warning of human health.","PeriodicalId":405874,"journal":{"name":"2018 IEEE SENSORS","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133171883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/ICSENS.2018.8589817
Seyedfakhreddin Nabavi, Lihong Zhang
In this paper we propose a new curve-shaped anchoring scheme to improve the durability and energy conversion efficiency of the piezoelectric MEMS harvesters. In this regard, a doubly clamped curve beam with a mass at its center is considered as an anchor, while a straight beam with proof mass is integrated to the center of this anchor. To the best of our knowledge, thus far no study has been done to assess the fatigue damage, which is actually critical to the micro-sized silicon-based piezoelectric harvesters. We have utilized the Coffin-Manson method and finite element modeling (FEM) to comprehensively study the fatigue lifetime of the proposed geometry. By using a micro-fabrication process, our proposed piezoelectric harvester has been fabricated and its capability in harnessing the vibration energy has been examined experimentally. It is found that the harvested energy can be enlarged by a factor of 2.66, while this improvement is gained by the resonant frequency reduction and failure force magnitude enlargement, in comparison with the conventional geometry of the piezoelectric MEMS harvesters.
{"title":"Curve-Shaped Anchor for Durability and Efficiency Improvement of Piezoelectric MEMS Energy Harvesters","authors":"Seyedfakhreddin Nabavi, Lihong Zhang","doi":"10.1109/ICSENS.2018.8589817","DOIUrl":"https://doi.org/10.1109/ICSENS.2018.8589817","url":null,"abstract":"In this paper we propose a new curve-shaped anchoring scheme to improve the durability and energy conversion efficiency of the piezoelectric MEMS harvesters. In this regard, a doubly clamped curve beam with a mass at its center is considered as an anchor, while a straight beam with proof mass is integrated to the center of this anchor. To the best of our knowledge, thus far no study has been done to assess the fatigue damage, which is actually critical to the micro-sized silicon-based piezoelectric harvesters. We have utilized the Coffin-Manson method and finite element modeling (FEM) to comprehensively study the fatigue lifetime of the proposed geometry. By using a micro-fabrication process, our proposed piezoelectric harvester has been fabricated and its capability in harnessing the vibration energy has been examined experimentally. It is found that the harvested energy can be enlarged by a factor of 2.66, while this improvement is gained by the resonant frequency reduction and failure force magnitude enlargement, in comparison with the conventional geometry of the piezoelectric MEMS harvesters.","PeriodicalId":405874,"journal":{"name":"2018 IEEE SENSORS","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133458049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/ICSENS.2018.8589691
K. Meena, R. Mathew, A. Sankar
Finite element analysis (FEA) is an efficient method to observe the behavior of a sensor and to optimize the design to achieve high performance. In the modeling of piezoresistive sensors, typical FEA techniques simplify the doping concentration as a constant profile throughout the junction depth of a piezoresistor. This approximation overestimates or underestimates the performance of the modeled device from the actual fabricated device. In this paper, a two-step modeling of piezoresistive sensors by incorporating nonuniformly doped piezoresistor is presented using TCAD TSUPREM4® and IntelliSuite® tools to achieve lower deviation between simulation and experimental results. The two-step modeling technique illustrates the method of choosing the number of slices and the slicing strategy to effectively model the uniform doping profile of a piezoresistor. A quad-beam proof-mass aligned piezoresistive accelerometer is considered for the validation of the modeling method by comparing the simulated results with the fabrication results. From the results, it is observed that the proposed adaptive slicing method with more slices at the surface of the piezoresistor provides the least deviation error of 5.43 %.
{"title":"A Finite Element Method Based Approach of Modeling of a Piezoresistive Accelerometer by Incorporating Doping Profile of a Diffused Resistor","authors":"K. Meena, R. Mathew, A. Sankar","doi":"10.1109/ICSENS.2018.8589691","DOIUrl":"https://doi.org/10.1109/ICSENS.2018.8589691","url":null,"abstract":"Finite element analysis (FEA) is an efficient method to observe the behavior of a sensor and to optimize the design to achieve high performance. In the modeling of piezoresistive sensors, typical FEA techniques simplify the doping concentration as a constant profile throughout the junction depth of a piezoresistor. This approximation overestimates or underestimates the performance of the modeled device from the actual fabricated device. In this paper, a two-step modeling of piezoresistive sensors by incorporating nonuniformly doped piezoresistor is presented using TCAD TSUPREM4® and IntelliSuite® tools to achieve lower deviation between simulation and experimental results. The two-step modeling technique illustrates the method of choosing the number of slices and the slicing strategy to effectively model the uniform doping profile of a piezoresistor. A quad-beam proof-mass aligned piezoresistive accelerometer is considered for the validation of the modeling method by comparing the simulated results with the fabrication results. From the results, it is observed that the proposed adaptive slicing method with more slices at the surface of the piezoresistor provides the least deviation error of 5.43 %.","PeriodicalId":405874,"journal":{"name":"2018 IEEE SENSORS","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132295010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/ICSENS.2018.8589510
N. Savard, M. Dehnel, C. Hoehr
A $mathbf{200} mu mathbf{m}$ and $mathbf{600} mu mathbf{m}$ diameter Ce3+ doped silica fiber, part of the UniBEaM charged-particle beam profiler system from D-Pace, were tested with 0 – 400 MeV neutrons at the TNF facility at TRIUMF, Canada. The detector's response to neutrons as a function of fiber length exposure was found to be linear, and the fiber was used to measure this neutron beam along its horizontal axis. This demonstrates the potential of the UniBEaM to measure neutron beam profiles.
在加拿大TRIUMF的TNF设施中，对D-Pace的UniBEaM带电粒子束谱仪系统中$mathbf{200} mu mathbf{m}$和$mathbf{600} mu mathbf{m}$直径的Ce3+掺杂二氧化硅光纤进行了0 ~ 400 MeV中子的测试。发现探测器对中子的响应与光纤长度暴露成线性关系，并利用光纤沿其水平轴测量中子束。这证明了UniBEaM在测量中子束剖面方面的潜力。
{"title":"Characteristics of a Ce-Doped Silica Fiber Irradiated by a Neutron Field Up to 400 MeV","authors":"N. Savard, M. Dehnel, C. Hoehr","doi":"10.1109/ICSENS.2018.8589510","DOIUrl":"https://doi.org/10.1109/ICSENS.2018.8589510","url":null,"abstract":"A $mathbf{200} mu mathbf{m}$ and $mathbf{600} mu mathbf{m}$ diameter Ce3+ doped silica fiber, part of the UniBEaM charged-particle beam profiler system from D-Pace, were tested with 0 – 400 MeV neutrons at the TNF facility at TRIUMF, Canada. The detector's response to neutrons as a function of fiber length exposure was found to be linear, and the fiber was used to measure this neutron beam along its horizontal axis. This demonstrates the potential of the UniBEaM to measure neutron beam profiles.","PeriodicalId":405874,"journal":{"name":"2018 IEEE SENSORS","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134218420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/ICSENS.2018.8589823
Bowen Xing, Rui Li, Zhihui Lin, Qi Wei, Bin Zhou, Rong Zhang
In this paper, an effective system-level simulation approach for MEMS gyroscope is reported to analyze the effect of imperfections. This approach establishes the dynamic model of gyroscope with manufacture error by model-order reduction (MOR), and deeply the paper provides an electrical system model in Verilog-A to simulate with interface circuit. The system model can capture typical effects such as quadrature and synthetic signal, which represent the degree of structural asymmetry due to manufacture errors. With this flexible approach, the dimensional errors in supporting beams are evaluated by quadrature error signal of the outputs. The match of the practical experiments and the simulation within less than 9.22% deviation has proved the feasibility of this approach.
{"title":"A System-Level Simulation Approach for Analyzing MEMS Gyroscope Manufacture Error","authors":"Bowen Xing, Rui Li, Zhihui Lin, Qi Wei, Bin Zhou, Rong Zhang","doi":"10.1109/ICSENS.2018.8589823","DOIUrl":"https://doi.org/10.1109/ICSENS.2018.8589823","url":null,"abstract":"In this paper, an effective system-level simulation approach for MEMS gyroscope is reported to analyze the effect of imperfections. This approach establishes the dynamic model of gyroscope with manufacture error by model-order reduction (MOR), and deeply the paper provides an electrical system model in Verilog-A to simulate with interface circuit. The system model can capture typical effects such as quadrature and synthetic signal, which represent the degree of structural asymmetry due to manufacture errors. With this flexible approach, the dimensional errors in supporting beams are evaluated by quadrature error signal of the outputs. The match of the practical experiments and the simulation within less than 9.22% deviation has proved the feasibility of this approach.","PeriodicalId":405874,"journal":{"name":"2018 IEEE SENSORS","volume":"357 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133045913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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