Progress in Crystal Growth and Characterization of Materials最新文献

This review is an audit of various Carbon fibers (CF) surface modification techniques that have been attempted and which produced results with an enhancement in the interfacial characteristics of CFRP systems. An introduction to the CF surface morphology, various techniques of modifications, their results and challenges are discussed here. CFs are emerging as the most promising materials for designing many technologically significant materials for current and future generations. In order to extract all the physic-mechanical properties of CF, it is essential to modulate a suitable environment through which good interfacial relation is achieved between the CF and the matrix. The interface has the utmost significance in composites and hybrid materials since tension at the interface can result in a deterioration of the fundamental properties. This review is aimed to provide a detailed understanding of the CF structure, its possible ways of modification, and the influence of interfacial compatibility in physic-mechanical and tribological properties. Both physical and chemical modifications are illustrated with specific examples, in addition to the characterization methods. Overall, this article provides key information about the CF based composite fabrication and their many applications in aerospace and electronics- where light weight and excellent mechanical strength are required.

Solution combustion synthesis (SCS) is a worldwide used methodology for the preparation of inorganic ceramic and composite materials with controlled properties for a wide number of applications, from catalysis to photocatalysis and electrocatalysis, from heavy metal removal to sensoristics and electronics. The high versatility and efficiency of this technique have led to the introduction of many variants, which allowed important optimization to the prepared materials. Moreover, its ecofriendly nature encouraged further studies about the use of sustainable precursors for the preparation of nanomaterials for energy and environment, according to the concept of circular economy. On the other hand, the large variety of expressions to define SCS and the often-contradictory definitions of the SCS parameters witnessed a scarce consciousness of the potentiality of this methodology. In this review article, the most important findings about SCS and the selection criteria for its main parameters are critically reviewed, in order to give useful guidelines to those scientists who want to use this methodology for preparing materials with improved or new functional properties. This review aims as well (i) to bring more clarity in the SCS terminology (ii) to increase the awareness of the SCS as a convenient tool for the synthesis of materials and (iii) to propose a new perspective in the SCS, with special attention to the use of ecofriendly procedures. Part of the review is also dedicated to precautions and limitations of this powerful methodology.

The electrical, magnetic, and structural features of bismuth manganite (BM), e.g., BiMnO₃, and bismuth ferrite (BF), e.g., BiFeO₃, are reviewed. Induced multiferroicity and enhanced magnetoelectric coupling are required for various modern device applications. BM and BF were synthesized using standard high-temperature sintering and processes such as sol–gel, hydrothermal, or wet chemical methods combined with annealing. The size and morphology of the nanoscale particles were controlled, although they were usually inhomogeneous. BF exhibits structurally stable antiferromagnetic (AFM) and ferroelectric (FE) phases in wide temperature ranges. Ferromagnetic (FM) order was induced in a thick shell around the AFM core of the nanoscale BF particles, which was attributed to a size effect related to surface strains and disorder. BM exhibited both structurally stable and unstable phases. The BiMnO₃, Bi₁₂MnO₂₀, and BiMn₂O₅ structures are nonferroelectric. The perovskite BiMnO₃ form was synthesized under high hydrostatic pressure. FM order occurs in BM at low temperatures. Bi(MnFe)O₃ solid solution samples exhibited competition between AFM and FM ordering. Doping can decrease the content of unavoidable secondary phases. Doping in the Bi ion sublattice can stabilize the crystal lattice owing to local strains caused by the difference in ionic radius between Bi and the dopant. Doping in the Fe and Mn sublattices affects the electrical features. The main achievement of substitution with tetra- and pentavalent ions is compensation of the oxygen vacancies. In turn, leakage current suppression enables switching of FE domains and polarization of the samples. A significant enhancement of magnetoelectric coupling was observed in composites formed from BF and other FE materials. The leakage currents can be diminished when an insulator polymer matrix blocks percolation. The potential applicability is related to enhanced magnetoelectric coupling. The constructed devices meet the size effect limitations for FE and FM ordering. Resistive switching suggests possible use in nonvolatile memories and gaseous sensors. The sensors can be used for hydrophones and for photovoltaic and photoluminescence applications, and they can be constructed from multiphase materials. Bulk multiferroic solid solutions, composites, and nanoheterostructures have already been tested for use in sensors, transducers, and read/write devices for technical purposes.

Monolithic integration of III-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the epitaxial growth of highly mismatched III-V materials, including arsenides, phosphides, and antimonides, on (001) oriented silicon substrates. Advances in hetero-epitaxy and selective-area hetero-epitaxy from micro to nano length scales are discussed. Opportunities in emerging electronics and integrated photonics are also presented.

In the great adventure of two-dimensional (2D) materials, the characterization techniques are the lighthouse to guide the investigators across heavy mist and submerged reef. In this review, we highlight the recent achievements in the characterization of the 2D materials. Firstly, the methods to identify the fundamental properties of the 2D materials are introduced. Then, the specific characterization techniques for analyzing electric, optical and chemical properties are summarized with regards to their corresponding fields of applications. It should also be noted that a big challenge remains in the characterizations of the 2D materials in the hybrid or composite and wide acceptance of the characterization standards need to be established to further promote the industrialization of 2D materials in the near future.

The synthesis of crystals through biomineralization is a process of protection and support preserved in animals, protists, moneras, plants and fungi. The genome of every species has evolved to preserve and/or modify the formation of one or another type of crystal, which may be of the organic or inorganic type. The most common inorganic crystals identified in organisms include calcium carbonate (CaCO₃), calcium phosphate (CaP), calcium oxalate (CaOx), magnetite or greigite, and sulfides of cadmium (CdS), mercury (HgS) and lead (PbS). Organic crystals are of the protein or ice type. The formation of both types of crystals requires biomolecules such as proteins. This paper reviews the proteins involved in the synthesis of different crystals in distinct biological systems, in order to understand how each organism has adapted its genome to preserve essential mechanisms such as biomineralization, which has enabled them to survive in a changing environment for millions of years.

Lately, germanium based materials attract a lot of interest as they can overcome some limits inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red sensing applications. The quality of epitaxially grown intrinsic and doped materials is critical to reach the targeted performances. One of the main challenges in the field remains the fabrication of efficient group-IV laser sources compatible with the microelectronics industry, seen as an alternative to the complexity of integration of III-V lasers on Si. The difficulties come from the fact that the group-IV semiconductor bandgap has to be transformed from indirect to direct, using high tensile strains or by alloying germanium with tin. Here, we review recent progresses on critical germanium-based photonic components such as waveguides, photodiodes and modulators and discuss the latest advances towards germanium-based lasers. We show that novel optical germanium-On-Insulator (GeOI) substrates fabricated by the Smart Cut™ technology is a key feature for future Si - Complementary Metal Oxide Semiconductor (CMOS) - compatible laser demonstration. This review hints at a future photonics platform based on germanium and Silicon.

Knowledge of the location and concentration of impurity atoms doped into a synthesized material is of great interest to investigate the effect of doping. This would usually be investigated using X-ray or neutron diffraction methods in combination with Rietveld analysis. However, this technique requires a large-scale facility such as a synchrotron radiation source and nuclear reactor, and can sometimes fail to produce the desired results, depending on the constituent elements and the crystallographic conditions that are being analysed. Thus, it would be preferable to use an element-selective spectroscopy technique that is applicable to any combination of elements. We have established a quantitative method to deduce the occupation sites and their occupancies, as well as the site-dependent chemical states of the doped elements, using a combination of transmission electron microscopy (TEM), energy-dispersive X-ray (EDX) spectroscopy, and electron energy-loss spectroscopy (EELS). The method is based on electron channelling phenomena where the symmetries of the Bloch waves excited in a crystal are dependent on the diffraction condition or incident beam direction with respect to the crystal axes. By rocking the incident electron beam with a fixed pivot point on the sample surface, a set of EDX/EELS spectra are obtained as a function of the beam direction. This is followed by a statistical treatment to extract the atom-site-dependent spectra, thereby quantitatively enabling the estimation of the site occupancies and chemical states of the dopants. This is an extension of the ‘ALCHEMI’ (Atom Location by Channelling Enhanced Microanalysis) method or ‘HARECXS/HARECES’ (High Angular Resolution Channelled X-ray/Electron Spectroscopy), and we further extended the method to be applicable to cases where the crystal of interest contains multiple inequivalent atomic sites for a particular element, applying the precise spectral predictions based on electron elastic/inelastic dynamical scattering theory. After introduction of conceptual aspects of the method, we describe the extension of the method together with the development of the theoretical calculation method. We then demonstrate several useful applications of the method, including luminescent, ferrite, and battery materials. We discuss the advantages and drawbacks of the present method, compared with those of the recently developed atomic column-by-column analysis using aberration-corrected scanning TEM and high-efficiency X-ray detectors.

Currently there is a high level of interest in the development of ultraviolet (UV) light sources for solid-state lighting, optical sensors, surface decontamination and water purification. III-V semiconductor UV LEDs are now successfully manufactured using the AlGaN material system; however, their efficiency is still low. The majority of UV LEDs require Al_xGa_1-xN layers with compositions in the mid-range between AlN and GaN. Because there is a significant difference in the lattice parameters of GaN and AlN, Al_xGa_1-xN substrates would be preferable to those of either GaN or AlN for many ultraviolet device applications. However, the growth of Al_xGa_1-xN bulk crystals by any standard bulk growth techniques has not been developed so far.

There are very strong electric polarization fields inside the wurtzite (hexagonal) group III-nitride structures. The charge separation within quantum wells leads to a significant reduction in the efficiency of optoelectronic device structures. Therefore, the growth of non-polar and semi-polar group III-nitride structures has been the subject of considerable interest recently. A direct way to eliminate polarization effects is to use non-polar (001) zinc-blende (cubic) III-nitride layers. However, attempts to grow zinc-blende GaN bulk crystals by any standard bulk growth techniques were not successful.

Molecular beam epitaxy (MBE) is normally regarded as an epitaxial technique for the growth of very thin layers with monolayer control of their thickness. In this study we have used plasma-assisted molecular beam epitaxy (PA-MBE) and have produced for the first time free-standing layers of zinc-blende GaN up to 100 μm in thickness and up to 3-inch in diameter. We have shown that our newly developed PA-MBE process for the growth of zinc-blende GaN layers can also be used to achieve free-standing wurtzite Al_xGa_1-xN wafers. Zinc-blende and wurtzite Al_xGa_1-xN polytypes can be grown on different orientations of GaAs substrates - (001) and (111)B respectively. We have subsequently removed the GaAs using a chemical etch in order to produce free-standing GaN and Al_xGa_1-xN wafers. At a thickness of ∼30 µm, free-standing GaN and Al_xGa_1-xN wafers can easily be handled without cracking. Therefore, free-standing GaN and Al_xGa_1-xN wafers with thicknesses in the 30–100 μm range may be used as substrates for further growth of GaN and Al_xGa_1-xN-based structures and devices.

We have compared different RF nitrogen plasma sources for the growth of thick nitride Al_xGa_1-xN films including a standard HD25 source from Oxford Applied Research and a novel high efficiency source from Riber. We have investigated a wide range of the growth rates from 0.2 to 3 µm/h. The us