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Surface modification and grafting of carbon fibers: A route to better interface 碳纤维表面改性和接枝:获得更好界面的途径
IF 5.1 2区 材料科学 Q1 CRYSTALLOGRAPHY Pub Date : 2018-09-01 DOI: 10.1016/j.pcrysgrow.2018.07.001
Nischith Raphael , K. Namratha , B.N. Chandrashekar , Kishor Kumar Sadasivuni , Deepalekshmi Ponnamma , A.S. Smitha , S. Krishnaveni , Chun Cheng , K. Byrappa

This review is an audit of various Carbon fibers (CF) surface modification techniques that have been attempted and which produced results with an enhancement in the interfacial characteristics of CFRP systems. An introduction to the CF surface morphology, various techniques of modifications, their results and challenges are discussed here. CFs are emerging as the most promising materials for designing many technologically significant materials for current and future generations. In order to extract all the physic-mechanical properties of CF, it is essential to modulate a suitable environment through which good interfacial relation is achieved between the CF and the matrix. The interface has the utmost significance in composites and hybrid materials since tension at the interface can result in a deterioration of the fundamental properties. This review is aimed to provide a detailed understanding of the CF structure, its possible ways of modification, and the influence of interfacial compatibility in physic-mechanical and tribological properties. Both physical and chemical modifications are illustrated with specific examples, in addition to the characterization methods. Overall, this article provides key information about the CF based composite fabrication and their many applications in aerospace and electronics- where light weight and excellent mechanical strength are required.

这篇综述是对各种碳纤维(CF)表面改性技术的审计,这些技术已经尝试过,并产生了增强CFRP系统界面特性的结果。介绍了CF表面形貌,各种技术的修改,他们的结果和挑战进行了讨论。碳纤维正在成为最有前途的材料,为当前和未来的几代人设计许多技术上重要的材料。为了提取CF的所有物理力学性能,必须调节一个合适的环境,使CF与基体之间形成良好的界面关系。界面在复合材料和杂化材料中具有重要意义,因为界面处的张力会导致基本性能的恶化。本文旨在详细介绍碳纤维的结构、可能的改性方法以及界面相容性对其物理力学和摩擦学性能的影响。除了表征方法外,还用具体的例子说明了物理和化学修饰。总体而言,本文提供了有关CF基复合材料制造及其在航空航天和电子领域的许多应用的关键信息-这些领域需要轻质和优异的机械强度。
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引用次数: 52
Solution combustion synthesis, energy and environment: Best parameters for better materials 溶液燃烧合成,能源和环境:最佳参数为更好的材料
IF 5.1 2区 材料科学 Q1 CRYSTALLOGRAPHY Pub Date : 2018-06-01 DOI: 10.1016/j.pcrysgrow.2018.03.001
Francesca Deganello , Avesh Kumar Tyagi

Solution combustion synthesis (SCS) is a worldwide used methodology for the preparation of inorganic ceramic and composite materials with controlled properties for a wide number of applications, from catalysis to photocatalysis and electrocatalysis, from heavy metal removal to sensoristics and electronics. The high versatility and efficiency of this technique have led to the introduction of many variants, which allowed important optimization to the prepared materials. Moreover, its ecofriendly nature encouraged further studies about the use of sustainable precursors for the preparation of nanomaterials for energy and environment, according to the concept of circular economy. On the other hand, the large variety of expressions to define SCS and the often-contradictory definitions of the SCS parameters witnessed a scarce consciousness of the potentiality of this methodology. In this review article, the most important findings about SCS and the selection criteria for its main parameters are critically reviewed, in order to give useful guidelines to those scientists who want to use this methodology for preparing materials with improved or new functional properties. This review aims as well (i) to bring more clarity in the SCS terminology (ii) to increase the awareness of the SCS as a convenient tool for the synthesis of materials and (iii) to propose a new perspective in the SCS, with special attention to the use of ecofriendly procedures. Part of the review is also dedicated to precautions and limitations of this powerful methodology.

溶液燃烧合成(SCS)是一种世界范围内使用的方法,用于制备具有控制性能的无机陶瓷和复合材料,其应用范围广泛,从催化到光催化和电催化,从重金属去除到传感和电子学。该技术的高通用性和效率导致了许多变体的引入,这使得所制备的材料得到了重要的优化。此外,它的生态友好性鼓励根据循环经济的概念,进一步研究使用可持续前体制备用于能源和环境的纳米材料。另一方面,定义SCS的表达方式多种多样,对SCS参数的定义常常相互矛盾,这表明人们对该方法的潜力缺乏认识。在本文中,本文对SCS的重要研究成果及其主要参数的选择标准进行了综述,旨在为那些希望利用该方法制备具有改进或新的功能特性的材料的科学家提供有用的指导。本综述旨在(i)使SCS术语更加清晰;(ii)提高对SCS作为材料合成方便工具的认识;(iii)提出SCS的新视角,特别关注生态友好程序的使用。部分评论还专门讨论了这种强大方法的预防措施和局限性。
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引用次数: 187
Synthesis and characterization of electrical features of bismuth manganite and bismuth ferrite: effects of doping in cationic and anionic sublattice: Materials for applications 锰酸铋和铁酸铋电特性的合成和表征:掺杂对正离子和阴离子亚晶格的影响:应用材料
IF 5.1 2区 材料科学 Q1 CRYSTALLOGRAPHY Pub Date : 2018-02-01 DOI: 10.1016/j.pcrysgrow.2018.02.001
A. Molak , D.K. Mahato , A.Z. Szeremeta

The electrical, magnetic, and structural features of bismuth manganite (BM), e.g., BiMnO3, and bismuth ferrite (BF), e.g., BiFeO3, are reviewed. Induced multiferroicity and enhanced magnetoelectric coupling are required for various modern device applications. BM and BF were synthesized using standard high-temperature sintering and processes such as sol–gel, hydrothermal, or wet chemical methods combined with annealing. The size and morphology of the nanoscale particles were controlled, although they were usually inhomogeneous. BF exhibits structurally stable antiferromagnetic (AFM) and ferroelectric (FE) phases in wide temperature ranges. Ferromagnetic (FM) order was induced in a thick shell around the AFM core of the nanoscale BF particles, which was attributed to a size effect related to surface strains and disorder. BM exhibited both structurally stable and unstable phases. The BiMnO3, Bi12MnO20, and BiMn2O5 structures are nonferroelectric. The perovskite BiMnO3 form was synthesized under high hydrostatic pressure. FM order occurs in BM at low temperatures. Bi(MnFe)O3 solid solution samples exhibited competition between AFM and FM ordering. Doping can decrease the content of unavoidable secondary phases. Doping in the Bi ion sublattice can stabilize the crystal lattice owing to local strains caused by the difference in ionic radius between Bi and the dopant. Doping in the Fe and Mn sublattices affects the electrical features. The main achievement of substitution with tetra- and pentavalent ions is compensation of the oxygen vacancies. In turn, leakage current suppression enables switching of FE domains and polarization of the samples. A significant enhancement of magnetoelectric coupling was observed in composites formed from BF and other FE materials. The leakage currents can be diminished when an insulator polymer matrix blocks percolation. The potential applicability is related to enhanced magnetoelectric coupling. The constructed devices meet the size effect limitations for FE and FM ordering. Resistive switching suggests possible use in nonvolatile memories and gaseous sensors. The sensors can be used for hydrophones and for photovoltaic and photoluminescence applications, and they can be constructed from multiphase materials. Bulk multiferroic solid solutions, composites, and nanoheterostructures have already been tested for use in sensors, transducers, and read/write devices for technical purposes.

综述了铋锰酸盐(BM)(如BiMnO3)和铋铁氧体(BF)(如BiFeO3)的电、磁和结构特征。感应多铁性和增强磁电耦合是各种现代器件应用所必需的。BM和BF采用标准的高温烧结和溶胶-凝胶、水热或湿化学方法结合退火等工艺合成。纳米级颗粒的大小和形态是可控的,尽管它们通常是不均匀的。高炉在较宽的温度范围内表现出结构稳定的反铁磁相和铁电相。纳米级BF颗粒在AFM核心周围的厚壳层中产生了铁磁有序,这归因于与表面应变和无序相关的尺寸效应。BM既有结构稳定相,也有结构不稳定相。BiMnO3、Bi12MnO20和BiMn2O5为非铁电结构。在高静水压力下合成了钙钛矿型BiMnO3。在低温下BM中出现FM顺序。Bi(MnFe)O3固溶体样品表现出AFM和FM排序的竞争。掺杂可以降低不可避免的二次相的含量。在铋离子亚晶格中掺杂铋离子与掺杂物之间离子半径的差异会引起局部应变,从而使晶格稳定。Fe和Mn亚晶格的掺杂会影响其电学特性。四价和五价离子取代的主要成果是补偿氧空位。反过来,泄漏电流抑制使样品的FE域和极化开关成为可能。由BF和其他FE材料组成的复合材料的磁电耦合显著增强。当绝缘体聚合物基体阻止渗透时,泄漏电流可以减少。潜在的适用性与增强的磁电耦合有关。所构建的器件满足有限元和调频排序的尺寸效应限制。电阻开关可能用于非易失性存储器和气体传感器。该传感器可用于水听器、光伏和光致发光应用,并且可以由多相材料构建。块状多铁固溶体、复合材料和纳米异质结构已经在传感器、传感器和读写设备中进行了技术测试。
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引用次数: 18
Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics 电子与光电子用(001)硅上高度不匹配III-V材料的外延生长
IF 5.1 2区 材料科学 Q1 CRYSTALLOGRAPHY Pub Date : 2017-12-01 DOI: 10.1016/j.pcrysgrow.2017.10.001
Qiang Li , Kei May Lau

Monolithic integration of III-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the epitaxial growth of highly mismatched III-V materials, including arsenides, phosphides, and antimonides, on (001) oriented silicon substrates. Advances in hetero-epitaxy and selective-area hetero-epitaxy from micro to nano length scales are discussed. Opportunities in emerging electronics and integrated photonics are also presented.

几十年来,硅上III-V的单片集成一直是一个具有科学吸引力的概念。近年来,由于电子工业对高迁移率通道晶体管的极大兴趣和硅光子学技术的蓬勃发展,这一研究领域取得了显著进展。在这篇综述文章中,我们概述了高度不匹配的III-V材料(包括砷化物、磷化物和锑化物)在(001)取向硅衬底上外延生长的基本障碍。讨论了从微到纳米尺度上异质外延和选择性面积异质外延的研究进展。新兴电子和集成光子学领域的机会也将出现。
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引用次数: 80
Lifting the mist of flatland: The recent progress in the characterizations of two-dimensional materials 解除平原的迷雾:二维材料表征的最新进展
IF 5.1 2区 材料科学 Q1 CRYSTALLOGRAPHY Pub Date : 2017-09-01 DOI: 10.1016/j.pcrysgrow.2017.06.001
Mengjian Zhu , Kun Huang , Kai-Ge Zhou

In the great adventure of two-dimensional (2D) materials, the characterization techniques are the lighthouse to guide the investigators across heavy mist and submerged reef. In this review, we highlight the recent achievements in the characterization of the 2D materials. Firstly, the methods to identify the fundamental properties of the 2D materials are introduced. Then, the specific characterization techniques for analyzing electric, optical and chemical properties are summarized with regards to their corresponding fields of applications. It should also be noted that a big challenge remains in the characterizations of the 2D materials in the hybrid or composite and wide acceptance of the characterization standards need to be established to further promote the industrialization of 2D materials in the near future.

在二维(2D)材料的伟大冒险中,表征技术是引导研究者穿越浓雾和暗礁的灯塔。在这篇综述中,我们重点介绍了最近在二维材料表征方面取得的成就。首先,介绍了二维材料基本性质的识别方法。然后,总结了分析材料电学、光学和化学性质的具体表征技术及其相应的应用领域。需要注意的是,在混合或复合材料中,二维材料的表征仍然是一个很大的挑战,需要建立广泛接受的表征标准,以在不久的将来进一步促进二维材料的工业化。
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引用次数: 11
Synthesis of inorganic and organic crystals mediated by proteins in different biological organisms. A mechanism of biomineralization conserved throughout evolution in all living species 不同生物体内蛋白质介导的无机和有机晶体的合成。生物矿化机制在所有现存物种的进化过程中都是保守的
IF 5.1 2区 材料科学 Q1 CRYSTALLOGRAPHY Pub Date : 2017-09-01 DOI: 10.1016/j.pcrysgrow.2017.07.001
Mayra Cuéllar-Cruz

The synthesis of crystals through biomineralization is a process of protection and support preserved in animals, protists, moneras, plants and fungi. The genome of every species has evolved to preserve and/or modify the formation of one or another type of crystal, which may be of the organic or inorganic type. The most common inorganic crystals identified in organisms include calcium carbonate (CaCO3), calcium phosphate (CaP), calcium oxalate (CaOx), magnetite or greigite, and sulfides of cadmium (CdS), mercury (HgS) and lead (PbS). Organic crystals are of the protein or ice type. The formation of both types of crystals requires biomolecules such as proteins. This paper reviews the proteins involved in the synthesis of different crystals in distinct biological systems, in order to understand how each organism has adapted its genome to preserve essential mechanisms such as biomineralization, which has enabled them to survive in a changing environment for millions of years.

通过生物矿化合成晶体是一个保护和支持保存在动物、原生生物、生物、植物和真菌中的过程。每个物种的基因组都已经进化到保存和/或修改一种或另一种晶体的形成,这些晶体可能是有机的或无机的。在生物体中发现的最常见的无机晶体包括碳酸钙(CaCO3)、磷酸钙(CaP)、草酸钙(CaOx)、磁铁矿或灰长岩,以及镉(CdS)、汞(HgS)和铅(PbS)的硫化物。有机晶体是蛋白质或冰的类型。这两种晶体的形成都需要蛋白质等生物分子。本文回顾了不同生物系统中不同晶体合成所涉及的蛋白质,以了解每种生物如何适应其基因组以保存生物矿化等基本机制,这使它们能够在不断变化的环境中生存数百万年。
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引用次数: 15
Crystal growth of inorganic, organic, and biological macromolecules in gels 无机、有机和生物大分子在凝胶中的晶体生长
IF 5.1 2区 材料科学 Q1 CRYSTALLOGRAPHY Pub Date : 2017-09-01 DOI: 10.1016/j.pcrysgrow.2017.04.003
Abel Moreno , María J. Rosales-Hoz
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引用次数: 5
Germanium based photonic components toward a full silicon/germanium photonic platform 迈向全硅/锗光子平台的锗光子元件
IF 5.1 2区 材料科学 Q1 CRYSTALLOGRAPHY Pub Date : 2017-06-01 DOI: 10.1016/j.pcrysgrow.2017.04.004
V. Reboud , A. Gassenq , J.M. Hartmann , J. Widiez , L. Virot , J. Aubin , K. Guilloy , S. Tardif , J.M. Fédéli , N. Pauc , A. Chelnokov , V. Calvo

Lately, germanium based materials attract a lot of interest as they can overcome some limits inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red sensing applications. The quality of epitaxially grown intrinsic and doped materials is critical to reach the targeted performances. One of the main challenges in the field remains the fabrication of efficient group-IV laser sources compatible with the microelectronics industry, seen as an alternative to the complexity of integration of III-V lasers on Si. The difficulties come from the fact that the group-IV semiconductor bandgap has to be transformed from indirect to direct, using high tensile strains or by alloying germanium with tin. Here, we review recent progresses on critical germanium-based photonic components such as waveguides, photodiodes and modulators and discuss the latest advances towards germanium-based lasers. We show that novel optical germanium-On-Insulator (GeOI) substrates fabricated by the Smart Cut™ technology is a key feature for future Si - Complementary Metal Oxide Semiconductor (CMOS) - compatible laser demonstration. This review hints at a future photonics platform based on germanium and Silicon.

最近,锗基材料吸引了很多人的兴趣,因为它们可以克服标准硅光子器件固有的一些限制,并且可以特别用于中红外传感应用。外延生长的本征材料和掺杂材料的质量是达到目标性能的关键。该领域的主要挑战之一仍然是制造与微电子工业兼容的高效iv族激光源,这被视为在Si上集成III-V激光器的复杂性的替代方案。困难来自于iv族半导体带隙必须由间接转变为直接,使用高拉伸应变或通过将锗与锡合金化。本文综述了锗基关键光子元件如波导、光电二极管和调制器的最新进展,并讨论了锗基激光器的最新进展。我们表明,采用Smart Cut™技术制造的新型光学绝缘体上锗(GeOI)衬底是未来硅互补金属氧化物半导体(CMOS)兼容激光演示的关键特征。这一综述暗示了未来基于锗和硅的光子平台。
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引用次数: 53
High-precision quantitative atomic-site-analysis of functional dopants in crystalline materials by electron-channelling-enhanced microanalysis 基于电子通道增强微分析的晶体材料中功能掺杂剂的高精度定量原子位分析
IF 5.1 2区 材料科学 Q1 CRYSTALLOGRAPHY Pub Date : 2017-06-01 DOI: 10.1016/j.pcrysgrow.2017.02.001
Shunsuke Muto , Masahiro Ohtsuka

Knowledge of the location and concentration of impurity atoms doped into a synthesized material is of great interest to investigate the effect of doping. This would usually be investigated using X-ray or neutron diffraction methods in combination with Rietveld analysis. However, this technique requires a large-scale facility such as a synchrotron radiation source and nuclear reactor, and can sometimes fail to produce the desired results, depending on the constituent elements and the crystallographic conditions that are being analysed. Thus, it would be preferable to use an element-selective spectroscopy technique that is applicable to any combination of elements. We have established a quantitative method to deduce the occupation sites and their occupancies, as well as the site-dependent chemical states of the doped elements, using a combination of transmission electron microscopy (TEM), energy-dispersive X-ray (EDX) spectroscopy, and electron energy-loss spectroscopy (EELS). The method is based on electron channelling phenomena where the symmetries of the Bloch waves excited in a crystal are dependent on the diffraction condition or incident beam direction with respect to the crystal axes. By rocking the incident electron beam with a fixed pivot point on the sample surface, a set of EDX/EELS spectra are obtained as a function of the beam direction. This is followed by a statistical treatment to extract the atom-site-dependent spectra, thereby quantitatively enabling the estimation of the site occupancies and chemical states of the dopants. This is an extension of the ‘ALCHEMI’ (Atom Location by Channelling Enhanced Microanalysis) method or ‘HARECXS/HARECES’ (High Angular Resolution Channelled X-ray/Electron Spectroscopy), and we further extended the method to be applicable to cases where the crystal of interest contains multiple inequivalent atomic sites for a particular element, applying the precise spectral predictions based on electron elastic/inelastic dynamical scattering theory. After introduction of conceptual aspects of the method, we describe the extension of the method together with the development of the theoretical calculation method. We then demonstrate several useful applications of the method, including luminescent, ferrite, and battery materials. We discuss the advantages and drawbacks of the present method, compared with those of the recently developed atomic column-by-column analysis using aberration-corrected scanning TEM and high-efficiency X-ray detectors.

了解掺杂到合成材料中的杂质原子的位置和浓度对研究掺杂的影响具有重要意义。这通常用x射线或中子衍射法结合里特费尔德分析来研究。然而,这种技术需要大型设施,如同步加速器辐射源和核反应堆,有时可能无法产生预期的结果,这取决于所分析的组成元素和晶体学条件。因此,优选使用适用于任何元素组合的元素选择光谱学技术。我们建立了一种定量的方法来推断占据位点及其占有率,以及掺杂元素的位置依赖的化学状态,使用透射电子显微镜(TEM),能量色散x射线(EDX)光谱和电子能量损失光谱(EELS)的组合。该方法基于电子通道现象,其中晶体中激发的布洛赫波的对称性取决于衍射条件或入射光束相对于晶体轴的方向。通过使入射电子束在样品表面以固定的枢轴点摇摆,得到了一组随电子束方向变化的EDX/EELS谱。随后进行统计处理以提取原子位置相关光谱,从而定量地估计位点占用和掺杂剂的化学状态。这是“ALCHEMI”(通过通道增强微分析进行原子定位)方法或“HARECXS/HARECES”(高角分辨率通道x射线/电子能谱)的扩展,我们进一步扩展了该方法,使其适用于感兴趣的晶体包含特定元素的多个不等效原子位的情况,应用基于电子弹性/非弹性动态散射理论的精确光谱预测。在介绍了该方法的概念方面之后,我们描述了该方法的扩展以及理论计算方法的发展。然后我们演示了该方法的几个有用的应用,包括发光,铁氧体和电池材料。我们讨论了本方法的优点和缺点,并与最近发展的原子逐柱分析方法进行了比较,这些分析方法使用了像差校正扫描TEM和高效x射线探测器。
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引用次数: 4
Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa1-xN 分子束外延是制备独立锌-闪锌矿GaN和纤锌矿AlxGa1-xN的生长技术
IF 5.1 2区 材料科学 Q1 CRYSTALLOGRAPHY Pub Date : 2017-06-01 DOI: 10.1016/j.pcrysgrow.2017.04.001
S.V. Novikov, A.J. Kent, C.T. Foxon
<div><p>Currently there is a high level of interest in the development of ultraviolet (UV) light sources for solid-state lighting, optical sensors, surface decontamination and water purification. III-V semiconductor UV LEDs are now successfully manufactured using the AlGaN material system; however, their efficiency is still low. The majority of UV LEDs require Al<sub>x</sub>Ga<sub>1-x</sub>N layers with compositions in the mid-range between AlN and GaN. Because there is a significant difference in the lattice parameters of GaN and AlN, Al<sub>x</sub>Ga<sub>1-x</sub>N substrates would be preferable to those of either GaN or AlN for many ultraviolet device applications. However, the growth of Al<sub>x</sub>Ga<sub>1-x</sub>N bulk crystals by any standard bulk growth techniques has not been developed so far.</p><p>There are very strong electric polarization fields inside the wurtzite (hexagonal) group III-nitride structures. The charge separation within quantum wells leads to a significant reduction in the efficiency of optoelectronic device structures. Therefore, the growth of non-polar and semi-polar group III-nitride structures has been the subject of considerable interest recently. A direct way to eliminate polarization effects is to use non-polar (001) zinc-blende (cubic) III-nitride layers. However, attempts to grow zinc-blende GaN bulk crystals by any standard bulk growth techniques were not successful.</p><p>Molecular beam epitaxy (MBE) is normally regarded as an epitaxial technique for the growth of very thin layers with monolayer control of their thickness. In this study we have used plasma-assisted molecular beam epitaxy (PA-MBE) and have produced for the first time free-standing layers of zinc-blende GaN up to 100<!--> <!-->μm in thickness and up to 3-inch in diameter. We have shown that our newly developed PA-MBE process for the growth of zinc-blende GaN layers can also be used to achieve free-standing wurtzite Al<sub>x</sub>Ga<sub>1-x</sub>N wafers. Zinc-blende and wurtzite Al<sub>x</sub>Ga<sub>1-x</sub>N polytypes can be grown on different orientations of GaAs substrates - (001) and (111)B respectively. We have subsequently removed the GaAs using a chemical etch in order to produce free-standing GaN and Al<sub>x</sub>Ga<sub>1-x</sub>N wafers. At a thickness of ∼30<!--> <!-->µm, free-standing GaN and Al<sub>x</sub>Ga<sub>1-x</sub>N wafers can easily be handled without cracking. Therefore, free-standing GaN and Al<sub>x</sub>Ga<sub>1-x</sub>N wafers with thicknesses in the 30–100<!--> <!-->μm range may be used as substrates for further growth of GaN and Al<sub>x</sub>Ga<sub>1-x</sub>N-based structures and devices.</p><p>We have compared different RF nitrogen plasma sources for the growth of thick nitride Al<sub>x</sub>Ga<sub>1-x</sub>N films including a standard HD25 source from Oxford Applied Research and a novel high efficiency source from Riber. We have investigated a wide range of the growth rates from 0.2 to 3<!--> <!-->µm/h. The us
目前,人们对开发用于固态照明、光学传感器、表面净化和水净化的紫外光源非常感兴趣。III-V型半导体UV led现已成功使用AlGaN材料系统制造;然而,它们的效率仍然很低。大多数UV led需要AlxGa1-xN层,其成分介于AlN和GaN之间的中间范围。由于GaN和AlN的晶格参数存在显著差异,因此在许多紫外器件应用中,AlxGa1-xN衬底将优于GaN或AlN衬底。然而,目前还没有任何标准的体生长技术来生长AlxGa1-xN体晶体。纤锌矿(六方)iii族氮化物结构内部存在很强的电极化场。量子阱中的电荷分离导致光电器件结构效率的显著降低。因此,非极性和半极性iii族氮化物结构的生长已成为近年来人们非常感兴趣的课题。消除极化效应的一种直接方法是使用非极性(001)锌-闪锌矿(立方)iii型氮化物层。然而,试图通过任何标准的体生长技术生长锌掺杂氮化镓体晶体都不成功。分子束外延(MBE)通常被认为是一种生长极薄层的外延技术,其厚度由单层控制。在这项研究中,我们使用了等离子体辅助分子束外延(PA-MBE),并首次生产出了厚度达100 μm、直径达3英寸的独立锌掺杂氮化镓层。我们已经证明,我们新开发的PA-MBE工艺用于生长锌掺杂氮化镓层,也可以用于获得独立的纤锌矿AlxGa1-xN晶圆。锌闪锌矿和纤锌矿AlxGa1-xN多型可以分别生长在GaAs衬底-(001)和(111)B的不同取向上。我们随后使用化学蚀刻去除GaAs,以生产独立的GaN和AlxGa1-xN晶圆。在~ 30µm的厚度下,独立的GaN和AlxGa1-xN晶圆可以很容易地处理而不会破裂。因此,厚度在30-100 μm范围内的独立GaN和AlxGa1-xN晶圆可以用作进一步生长GaN和AlxGa1-xN基结构和器件的衬底。我们比较了用于生长厚氮化AlxGa1-xN薄膜的不同射频氮等离子体源,包括来自牛津应用研究公司的标准HD25源和来自Riber的新型高效源。我们研究了从0.2到3µm/h的生长速率范围。高效氮射频等离子体源的使用使PA-MBE成为一种潜在可行的商业工艺,因为独立薄膜可以在一天内完成。我们的研究结果表明,MBE可能在几个重要领域与其他iii族氮化物体生长技术竞争,包括生产独立的锌-铀矿(立方)(Al)GaN和独立的纤锌矿(六方)AlGaN。
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引用次数: 18
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Progress in Crystal Growth and Characterization of Materials
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