The existing separation technologies, including chemical precipitation and adsorption process, cannot quickly and selectively separate and recycle heavy metal ions of lead (II) from battery waste liquid. Due to its rich sulfur content and excellent electrical conductivity, vanadium disulfide is a potential material for effectively removing lead from wastewater. The vanadium disulfide material with selective adsorption ability was introduced into CDI technology to construct a coupling technology with both advantages. The n-doped ZIF@vanadium disulfide (ZAC@VS 2 ) composites were successfully synthesized by hydrothermal method. Electrosorption experiments show that ZAC@VS 2 material presents the remarkable saturated adsorption capacity to lead(II) ions (239.52mg/g) in the 500mg/L PbCl 2 solution. In the triplex blend system (Fe 3+ /Pb 2+ /Na + ) with each solute density of 100 mg/L, the saturated adsorption efficiency of 85.4% to Pb 2+ can still be maintained. In addition, compared with the Langmuir(R 2 =0.873) adsorption isotherm model, the Freundlich model (R 2 =0.922) can be better used to fit the adsorption process, which proves that the adsorption process is multilayered and heterogeneous. XPS tests and competitive adsorption experiments show that the electric double layer (EDL) and complexation together promote the selective adsorption of heavy metal ions by ZAC@VS 2 . ZAC@VS 2 composite electrode shows excellent performance in the removal of lead ions in battery waste liquid, indicating the potential of introducing ZAC@VS 2 into CDI to remove heavy metal ions.
{"title":"A Coupling Technology of Capacitive Deionization and Carbon-Supported Petal-Like VS2 Composite for Effective and Selective Adsorption of Lead (II) Ions","authors":"Dexi Liu, Shichang Xu, Yanmeng Cai, Yue Wang, Jiaqi Guo, Youlin Li","doi":"10.2139/ssrn.3936338","DOIUrl":"https://doi.org/10.2139/ssrn.3936338","url":null,"abstract":"The existing separation technologies, including chemical precipitation and adsorption process, cannot quickly and selectively separate and recycle heavy metal ions of lead (II) from battery waste liquid. Due to its rich sulfur content and excellent electrical conductivity, vanadium disulfide is a potential material for effectively removing lead from wastewater. The vanadium disulfide material with selective adsorption ability was introduced into CDI technology to construct a coupling technology with both advantages. The n-doped ZIF@vanadium disulfide (ZAC@VS 2 ) composites were successfully synthesized by hydrothermal method. Electrosorption experiments show that ZAC@VS 2 material presents the remarkable saturated adsorption capacity to lead(II) ions (239.52mg/g) in the 500mg/L PbCl 2 solution. In the triplex blend system (Fe 3+ /Pb 2+ /Na + ) with each solute density of 100 mg/L, the saturated adsorption efficiency of 85.4% to Pb 2+ can still be maintained. In addition, compared with the Langmuir(R 2 =0.873) adsorption isotherm model, the Freundlich model (R 2 =0.922) can be better used to fit the adsorption process, which proves that the adsorption process is multilayered and heterogeneous. XPS tests and competitive adsorption experiments show that the electric double layer (EDL) and complexation together promote the selective adsorption of heavy metal ions by ZAC@VS 2 . ZAC@VS 2 composite electrode shows excellent performance in the removal of lead ions in battery waste liquid, indicating the potential of introducing ZAC@VS 2 into CDI to remove heavy metal ions.","PeriodicalId":412570,"journal":{"name":"Electrochemistry eJournal","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130891694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jae-Hwan Kim, Young-Hwan Lee, Jun-Hyoung Park, Byeong-Joo Lee, Young-Woon Byeon, Jae‐Chul Lee
The charging process of secondary batteries is always associated with a large volume expansion of the alloying anodes, which in many cases, develops high compressive residual stresses near the propagating interface. This phenomenon causes a significant reduction in the rate performance of the anodes and is detrimental to the development of fast-charging batteries. However, for the Na-Sn battery system, the residual stresses that develop near the interface are not stored, but are relieved by the generation of high-density dislocations in crystalline Sn. Direct-contact diffusion experiments show that these dislocations facilitate the preferential transport of Na and accelerate the Na diffusion into crystalline Sn at ultrafast rates via "dislocation-pipe diffusion". Advanced analyses are performed to observe the evolution of atomic-scale structures while measuring the distribution and magnitude of residual stresses near the interface. In addition, multi-scale simulations that combined classical molecular dynamics and first-principles calculations are performed to explain the structural origins of the ultrafast diffusion rates observed in the Na-Sn system. These findings not only address the knowledge gaps regarding the relationship between pipe diffusion and the diffusivity of carrier ions but also provide guidelines for the appropriate selection of anode materials for use in fast-charging batteries.
{"title":"Ultrafast Na Transport into Crystalline Sn via Dislocation-Pipe Diffusion for Rapid Battery Charging","authors":"Jae-Hwan Kim, Young-Hwan Lee, Jun-Hyoung Park, Byeong-Joo Lee, Young-Woon Byeon, Jae‐Chul Lee","doi":"10.2139/ssrn.3866406","DOIUrl":"https://doi.org/10.2139/ssrn.3866406","url":null,"abstract":"The charging process of secondary batteries is always associated with a large volume expansion of the alloying anodes, which in many cases, develops high compressive residual stresses near the propagating interface. This phenomenon causes a significant reduction in the rate performance of the anodes and is detrimental to the development of fast-charging batteries. However, for the Na-Sn battery system, the residual stresses that develop near the interface are not stored, but are relieved by the generation of high-density dislocations in crystalline Sn. Direct-contact diffusion experiments show that these dislocations facilitate the preferential transport of Na and accelerate the Na diffusion into crystalline Sn at ultrafast rates via \"dislocation-pipe diffusion\". Advanced analyses are performed to observe the evolution of atomic-scale structures while measuring the distribution and magnitude of residual stresses near the interface. In addition, multi-scale simulations that combined classical molecular dynamics and first-principles calculations are performed to explain the structural origins of the ultrafast diffusion rates observed in the Na-Sn system. These findings not only address the knowledge gaps regarding the relationship between pipe diffusion and the diffusivity of carrier ions but also provide guidelines for the appropriate selection of anode materials for use in fast-charging batteries.","PeriodicalId":412570,"journal":{"name":"Electrochemistry eJournal","volume":"236 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132925286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. P. Praveen Kumar, Sharanakumar Tumruguddi math, Mounesh, Nandinibaby N H M, K. Reddy
The synthesis of tetra amidobenzylpiperidine substituted Co(II) phthalocyanine (TABPCoPc) from Co(II) tetra carboxylic acid phthalocyanine (CoTcPc) via amide linkage has been developed. These macrocylic compounds are high molecular weight and sparingly soluble in common organic solvents, but soluble in aprotic organic solvents. The TABPCoPc has been confirmed by FTIR, UV-Visible X-Ray Diffraction and Thermogravimtric methods. The TABPCoPc was electrochemically active in paracetamol detection. The TABPCoPc electrode was used for detection and sensitivity of paracetamol by cyclic voltammetric method. The electrochemical analysis was done by using 0.05 M H2SO4 (pH-4) with TABPCoPc electrode. The linear plot observed in the concentration range of 10 µM to 180 µM with the detection limit 0.18 µM for paracetamol on the modified electrode. The TABPCoPc electrode exhibits excellent and high stability, and sensitivity for the micro molecular detection of paracetamol.
以Co(II)四羧酸酞菁(CoTcPc)为原料，采用酰胺键法合成了四氨基苄基哌啶取代Co(II)酞菁(TABPCoPc)。这些大环化合物分子量高，在普通有机溶剂中难溶，但在非质子有机溶剂中可溶。用红外光谱、紫外-可见x射线衍射和热重法对其进行了证实。TABPCoPc在对乙酰氨基酚检测中具有电化学活性。采用TABPCoPc电极对扑热息痛进行循环伏安法检测。采用0.05 M H2SO4 (pH-4)和TABPCoPc电极进行电化学分析。在10µM ~ 180µM的浓度范围内，对乙酰氨基酚在修饰电极上的检出限为0.18µM。TABPCoPc电极对扑热息痛的微分子检测具有良好的稳定性和灵敏度。
{"title":"Tetra (Amidobenzylpiperidine) Cobalt (II) Phthalocyanine Based Electrochemical Sensor for the Detection of Paracetamol","authors":"N. P. Praveen Kumar, Sharanakumar Tumruguddi math, Mounesh, Nandinibaby N H M, K. Reddy","doi":"10.2139/ssrn.3875553","DOIUrl":"https://doi.org/10.2139/ssrn.3875553","url":null,"abstract":"The synthesis of tetra amidobenzylpiperidine substituted Co(II) phthalocyanine (TABPCoPc) from Co(II) tetra carboxylic acid phthalocyanine (CoTcPc) via amide linkage has been developed. These macrocylic compounds are high molecular weight and sparingly soluble in common organic solvents, but soluble in aprotic organic solvents. The TABPCoPc has been confirmed by FTIR, UV-Visible X-Ray Diffraction and Thermogravimtric methods. The TABPCoPc was electrochemically active in paracetamol detection. The TABPCoPc electrode was used for detection and sensitivity of paracetamol by cyclic voltammetric method. The electrochemical analysis was done by using 0.05 M H<sub>2</sub>SO<sub>4</sub> (pH-4) with TABPCoPc electrode. The linear plot observed in the concentration range of 10 µM to 180 µM with the detection limit 0.18 µM for paracetamol on the modified electrode. The TABPCoPc electrode exhibits excellent and high stability, and sensitivity for the micro molecular detection of paracetamol.","PeriodicalId":412570,"journal":{"name":"Electrochemistry eJournal","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122083829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We develop a new solution synthesis strategy for producing high ionic-conducting sulfide solid electrolyte using ethylenediamine (EDA) solvent. Here, we follow three simple steps: dissolve the precursor in ethylenediamine solvent to form the clear solution, then removing a solvent at 180 °C followed by heat treatment. The prepared Li5.5MPS4.5Cl1.5 electrolyte demonstrated the high ionic conductivity of 2.87 mS cm-1 at 25 °C. Further, fabricated solid battery using optimized electrolyte exhibited a high initial discharge capacity of 175.7 mAh g-1 at 0.1 C rate. Moreover, the synthesis technique is a convenient and quick process, thus facilitating mass production of solid electrolytes.
提出了一种以乙二胺(EDA)为溶剂制备高离子导电性硫化物固体电解质的新溶液合成策略。在这里，我们遵循三个简单的步骤:将前驱体溶解在乙二胺溶剂中形成透明溶液，然后在180°C下去除溶剂，然后进行热处理。制备的Li5.5MPS4.5Cl1.5电解质在25℃时离子电导率高达2.87 mS cm-1。此外，使用优化后的电解质制备的固体电池在0.1 C倍率下具有175.7 mAh g-1的高初始放电容量。此外，该合成工艺方便快捷，有利于固体电解质的大批量生产。
{"title":"High Ionic-Conducting Li-ion Argyrodites Synthesized Using a Simple and Economic Liquid-Phase Approach and Their Application in All Solid-State-Lithium Batteries","authors":"Y. Subramanian, R. Rajagopal, K. Ryu","doi":"10.2139/ssrn.3807765","DOIUrl":"https://doi.org/10.2139/ssrn.3807765","url":null,"abstract":"We develop a new solution synthesis strategy for producing high ionic-conducting sulfide solid electrolyte using ethylenediamine (EDA) solvent. Here, we follow three simple steps: dissolve the precursor in ethylenediamine solvent to form the clear solution, then removing a solvent at 180 °C followed by heat treatment. The prepared Li5.5MPS4.5Cl1.5 electrolyte demonstrated the high ionic conductivity of 2.87 mS cm-1 at 25 °C. Further, fabricated solid battery using optimized electrolyte exhibited a high initial discharge capacity of 175.7 mAh g-1 at 0.1 C rate. Moreover, the synthesis technique is a convenient and quick process, thus facilitating mass production of solid electrolytes.","PeriodicalId":412570,"journal":{"name":"Electrochemistry eJournal","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120981357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Joonhyung Lim, Yun Chang Choi, D. Choi, I. Chang, K. Hyeon‐Deuk, K. S. Jeong, K. Kwak, M. Cho
Summary Investigating the separate dynamics of electrons and holes has been challenging, although it is critical for the fundamental understanding of semiconducting nanomaterials. n-Type self-doped colloidal quantum dots (CQDs) with excess electrons occupying the low-lying state in the conduction band (CB) have attracted a great deal of attention because of not only their potential applications to infrared optoelectronics but also their intrinsic system that offers a platform for investigating electron dynamics without elusive contributions from holes in the valence band. Here, we show an unprecedented ultrafast intraband Auger process, electron relaxation between spin-orbit coupling states, and exciton-to-ligand vibrational energy transfer process that all occur exclusively in the CB of the self-doped β-HgS CQDs. The electron dynamics obtained by femtosecond mid-infrared spectroscopy will pave the way for further understanding of the blinking phenomenon, disproportionate charging in light-emitting diodes, and hot electron dynamics in higher quantum states coupled to surface states of CQDs.
{"title":"Ultrafast Intraband Auger Process in Self-Doped Colloidal Quantum Dots","authors":"Joonhyung Lim, Yun Chang Choi, D. Choi, I. Chang, K. Hyeon‐Deuk, K. S. Jeong, K. Kwak, M. Cho","doi":"10.2139/ssrn.3687023","DOIUrl":"https://doi.org/10.2139/ssrn.3687023","url":null,"abstract":"Summary Investigating the separate dynamics of electrons and holes has been challenging, although it is critical for the fundamental understanding of semiconducting nanomaterials. n-Type self-doped colloidal quantum dots (CQDs) with excess electrons occupying the low-lying state in the conduction band (CB) have attracted a great deal of attention because of not only their potential applications to infrared optoelectronics but also their intrinsic system that offers a platform for investigating electron dynamics without elusive contributions from holes in the valence band. Here, we show an unprecedented ultrafast intraband Auger process, electron relaxation between spin-orbit coupling states, and exciton-to-ligand vibrational energy transfer process that all occur exclusively in the CB of the self-doped β-HgS CQDs. The electron dynamics obtained by femtosecond mid-infrared spectroscopy will pave the way for further understanding of the blinking phenomenon, disproportionate charging in light-emitting diodes, and hot electron dynamics in higher quantum states coupled to surface states of CQDs.","PeriodicalId":412570,"journal":{"name":"Electrochemistry eJournal","volume":"4 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121005796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Liao, Changcheng Chen, Chien-Lung Liang, Kwang-Lung Lin, A. Wu
Abstract The literature has accumulated plenty of interesting findings of electromigration-induced phenomena in pure Sn. Most of the researches revealed the thermodynamically steady states of materials under electromigration. We presented a comprehensive study of electromigration in pure Sn at 5.5–7.5 × 103 A/cm2 for 5.5 h revealing the effects on crystallinity, microstructure, and electrical property. The present work provided a divergent explanation about the electrical property variation under electromigration by introducing the crystallinity change aspect, as evidenced by the in situ synchrotron X-ray diffraction (XRD) and high-resolution transmission electron microscope (HRTEM) investigations. The in situ XRD analysis showed an integrated intensity decline of diffraction peaks (up to a 90% reduction rate) and the buildup of lattice strain (up to 0.68% beyond the yield point) within the pure Sn strip, revealing a crystallinity degradation phenomenon under electromigration. The atomic-scale lattice appearance showed direct evidence of dislocation production under electromigration as a result of the plastic deformation. The introduction of dislocations formed sub-lattices with various crystal orientations that were responsible for the integrated intensity decline. The increase in electrical resistance after the electromigration experiment corresponded to the consequences of the observed lattice disruption and lattice strain accumulation phenomena. The thermal benchmark experiments evidenced the predominant athermal electromigration effect, rather than the thermal one, on the crystallinity and electrical resistance responses to electromigration.
文献中积累了大量关于纯锡中电迁移现象的有趣发现。大多数研究都揭示了材料在电迁移作用下的热力学稳定状态。我们对纯锡在5.5 - 7.5 × 103 a /cm2下5.5 h的电迁移进行了全面研究，揭示了对结晶度、微观结构和电学性能的影响。通过原位同步x射线衍射(XRD)和高分辨率透射电子显微镜(HRTEM)的研究，本文从结晶性变化的角度对电迁移下的电学性质变化提供了不同的解释。原位XRD分析表明，纯锡条内的衍射峰强度整体下降(还原率高达90%)，晶格应变增加(超过屈服点超过0.68%)，显示出电迁移作用下的结晶度退化现象。原子尺度的晶格形貌显示了塑性变形导致的电迁移导致位错产生的直接证据。位错的引入形成了具有不同晶体取向的亚晶格，导致了综合强度的下降。电迁移实验后电阻的增加与观察到的晶格破坏和晶格应变积累现象的结果相对应。热基准实验证明，非热电迁移效应比热电迁移效应对结晶性和电迁移电阻响应的影响更大。
{"title":"A Comprehensive Study of Electromigration in Pure Sn: Effects on Crystallinity, Microstructure, and Electrical Property","authors":"Y. Liao, Changcheng Chen, Chien-Lung Liang, Kwang-Lung Lin, A. Wu","doi":"10.2139/ssrn.3622628","DOIUrl":"https://doi.org/10.2139/ssrn.3622628","url":null,"abstract":"Abstract The literature has accumulated plenty of interesting findings of electromigration-induced phenomena in pure Sn. Most of the researches revealed the thermodynamically steady states of materials under electromigration. We presented a comprehensive study of electromigration in pure Sn at 5.5–7.5 × 103 A/cm2 for 5.5 h revealing the effects on crystallinity, microstructure, and electrical property. The present work provided a divergent explanation about the electrical property variation under electromigration by introducing the crystallinity change aspect, as evidenced by the in situ synchrotron X-ray diffraction (XRD) and high-resolution transmission electron microscope (HRTEM) investigations. The in situ XRD analysis showed an integrated intensity decline of diffraction peaks (up to a 90% reduction rate) and the buildup of lattice strain (up to 0.68% beyond the yield point) within the pure Sn strip, revealing a crystallinity degradation phenomenon under electromigration. The atomic-scale lattice appearance showed direct evidence of dislocation production under electromigration as a result of the plastic deformation. The introduction of dislocations formed sub-lattices with various crystal orientations that were responsible for the integrated intensity decline. The increase in electrical resistance after the electromigration experiment corresponded to the consequences of the observed lattice disruption and lattice strain accumulation phenomena. The thermal benchmark experiments evidenced the predominant athermal electromigration effect, rather than the thermal one, on the crystallinity and electrical resistance responses to electromigration.","PeriodicalId":412570,"journal":{"name":"Electrochemistry eJournal","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132181497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Theoretical studies and analysis of heat transfer from a rectangular extended surfaces and a pin finned plate studied to calculate the average Nusselt number in parallel, vertical direction placed along the sidewall. The total rise of the mean Nusselt number is noticed around 36% for pin finned plate with respect to a plain plate. This is examined with optimal fin spacing of Sv with L ratio equals to 0.2 and Sh with W ratio equals to 0.25, height of extended surfaces 24 mm (Height to thickness ratio 8), and 45o angle of inclination . The mean Nusselt number decreases with rise in angle of inclination and also increases with rise in aspect ratio. Present study reveals that in-line and staggered arrangements do not yield appreciably different results.The maximum average Nusselt number difference between conductive and non-conductive fins is around 5 % for Sh/W= 0.33, Sv/L =0.2 at θ = 45°, fin height of 6 mm (H/t=2).
对矩形扩展面和针翅板的传热进行理论研究和分析，计算沿侧壁平行垂直方向的平均努塞尔数。与普通板相比，针翅板平均努塞尔数的总上升约为36%。最佳翅片间距为L比为0.2的Sv和W比为0.25的Sh，延伸面高度为24 mm(高厚比为8)，倾角为45°。平均努塞尔数随倾角的增大而减小，随纵横比的增大而增大。目前的研究表明，直线排列和交错排列不会产生明显不同的结果。当θ = 45°时，Sh/W= 0.33, Sv/L =0.2，翅片高度为6 mm (H/t=2)时，导电翅片与非导电翅片的最大平均努塞尔数差约为5%。
{"title":"Enhancement of Heat Transfer From Extended Surfaces by CFD","authors":"L. Sahoo","doi":"10.2139/ssrn.3549677","DOIUrl":"https://doi.org/10.2139/ssrn.3549677","url":null,"abstract":"Theoretical studies and analysis of heat transfer from a rectangular extended surfaces and a pin finned plate studied to calculate the average Nusselt number in parallel, vertical direction placed along the sidewall. The total rise of the mean Nusselt number is noticed around 36% for pin finned plate with respect to a plain plate. This is examined with optimal fin spacing of Sv with L ratio equals to 0.2 and Sh with W ratio equals to 0.25, height of extended surfaces 24 mm (Height to thickness ratio 8), and 45o angle of inclination . The mean Nusselt number decreases with rise in angle of inclination and also increases with rise in aspect ratio. Present study reveals that in-line and staggered arrangements do not yield appreciably different results.The maximum average Nusselt number difference between conductive and non-conductive fins is around 5 % for S<sub>h</sub>/W= 0.33, S<sub>v</sub>/L =0.2 at θ = 45°, fin height of 6 mm (H/t=2).","PeriodicalId":412570,"journal":{"name":"Electrochemistry eJournal","volume":"340 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124779407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Slides: A Minimal Problem of Marginal Emissions","authors":"R. T. Trahan","doi":"10.2139/ssrn.3429810","DOIUrl":"https://doi.org/10.2139/ssrn.3429810","url":null,"abstract":"","PeriodicalId":412570,"journal":{"name":"Electrochemistry eJournal","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125101539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Electronic properties of wurtzite silicon (WZ-Si) are investigated by first-principle calculation. It is found that WZ-Si is an indirect band-gap semiconductor at ambient condition. A uniaxial strain along the c-direction can reduce the direct energy gap at Γ significantly. Calculated pressure needed to compress WZ-Si is not too high, which shows strained WZ-Si would be potential in practical use. The effective mass of electron is found strongly dependent on strain which could be used to tailor the transport properties.
{"title":"Band Gap Engineering of Wurtzite Silicon by Uniaxial Pressure","authors":"Ziwei Cui","doi":"10.2139/ssrn.3533264","DOIUrl":"https://doi.org/10.2139/ssrn.3533264","url":null,"abstract":"Electronic properties of wurtzite silicon (WZ-Si) are investigated by first-principle calculation. It is found that WZ-Si is an indirect band-gap semiconductor at ambient condition. A uniaxial strain along the c-direction can reduce the direct energy gap at Γ significantly. Calculated pressure needed to compress WZ-Si is not too high, which shows strained WZ-Si would be potential in practical use. The effective mass of electron is found strongly dependent on strain which could be used to tailor the transport properties.","PeriodicalId":412570,"journal":{"name":"Electrochemistry eJournal","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122932609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yingying Wang, Hongbo Cheng, Jielu Yan, Ning Chen, Peng Yan, J. Ouyang
A non-linearly decreasing piezoelectric coefficient with an external electric field is an intrinsic property of a fully poled ferroelectric film, which has been observed in the measured longitudinal piezoelectric responses. However, for transverse piezoelectric responses, the observed converse piezoelectric coefficients (e31,f) have displayed a different trend. Here we show that this disagreement can be rationally resolved by utilizing a small field e31,f test under a sweeping direct current bias voltage, in which the field-dependent transverse piezoelectric response is analyzed in a stepwise manner. Understanding of this nonlinear field-dependence will help improve the design of transverse piezoelectric devices.
{"title":"Nonlinear Electric Field Dependence of the Transverse Piezoelectric Response in a Ferroelectric Film","authors":"Yingying Wang, Hongbo Cheng, Jielu Yan, Ning Chen, Peng Yan, J. Ouyang","doi":"10.2139/ssrn.3603591","DOIUrl":"https://doi.org/10.2139/ssrn.3603591","url":null,"abstract":"A non-linearly decreasing piezoelectric coefficient with an external electric field is an intrinsic property of a fully poled ferroelectric film, which has been observed in the measured longitudinal piezoelectric responses. However, for transverse piezoelectric responses, the observed converse piezoelectric coefficients (<i>e31,f</i>) have displayed a different trend. Here we show that this disagreement can be rationally resolved by utilizing a small field <i>e31,f</i> test under a sweeping direct current bias voltage, in which the field-dependent transverse piezoelectric response is analyzed in a stepwise manner. Understanding of this nonlinear field-dependence will help improve the design of transverse piezoelectric devices.","PeriodicalId":412570,"journal":{"name":"Electrochemistry eJournal","volume":"351 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133352658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：