2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)最新文献
Pub Date : 2017-05-01DOI: 10.1109/ISAF.2017.8000217
J. Roscow, R. Lewis, John Taylor, C. Bowen
A finite element model is presented in which bilayer lead zirconate titanate (PZT) structures that are formed from a dense layer and a porous layer are investigated for their hydrostatic sensing properties. The model simulates the poling of the porous ferroelectric material to determine the distribution of poled material throughout the structure. The fraction of PZT successfully poled is found to be closely related to resulting piezoelectric and dielectric properties of the composite. Structures with high layer porosity (>40 vol.%) and porous layer relative thickness (>0.5) were found to have a significantly improved hydrostatic piezoelectric coefficient, dh, hydrostatic voltage coefficient, gh, and hydrostatic figure of merit, dh.gh. The highest dh.gh of 7.74 × 10−12 m2/N was observed in the structure with a porous layer relative thickness of 0.6 and porosity of 60 vol.%, which was more than 100 times higher than that for dense PZT (dh.gh = 0.067 × 10−12 m2/N) and over three times that of PZT with 60 vol.% porosity with 3-3 connectivity (dh.gh = 2.19 × 10−12 m2/N). The results demonstrate the potential for layered porous materials for use in hydrophones.
{"title":"Finite element modelling of bilayer porous PZT structures with improved hydrostatic figures of merit","authors":"J. Roscow, R. Lewis, John Taylor, C. Bowen","doi":"10.1109/ISAF.2017.8000217","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000217","url":null,"abstract":"A finite element model is presented in which bilayer lead zirconate titanate (PZT) structures that are formed from a dense layer and a porous layer are investigated for their hydrostatic sensing properties. The model simulates the poling of the porous ferroelectric material to determine the distribution of poled material throughout the structure. The fraction of PZT successfully poled is found to be closely related to resulting piezoelectric and dielectric properties of the composite. Structures with high layer porosity (>40 vol.%) and porous layer relative thickness (>0.5) were found to have a significantly improved hydrostatic piezoelectric coefficient, d<inf>h</inf>, hydrostatic voltage coefficient, g<inf>h</inf>, and hydrostatic figure of merit, d<inf>h</inf>.g<inf>h</inf>. The highest d<inf>h</inf>.g<inf>h</inf> of 7.74 × 10<sup>−12</sup> m<sup>2</sup>/N was observed in the structure with a porous layer relative thickness of 0.6 and porosity of 60 vol.%, which was more than 100 times higher than that for dense PZT (d<inf>h</inf>.g<inf>h</inf> = 0.067 × 10<sup>−12</sup> m<sup>2</sup>/N) and over three times that of PZT with 60 vol.% porosity with 3-3 connectivity (d<inf>h</inf>.g<inf>h</inf> = 2.19 × 10<sup>−12</sup> m<sup>2</sup>/N). The results demonstrate the potential for layered porous materials for use in hydrophones.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116813995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.1109/ISAF.2017.8000209
Liangxi Li, Jonathan Cook, Zhongyang Cheng, Xinyu Zhang
Peripheral nerve lesion treatments attract extensive attention. One of the most promising treatments is guidance scaffold. It promotes cell adhesion and proliferation and their axonal growth to distal stump. PVDF was chosen as the scaffolding material due to its flexibility and piezoelectric effect. Several researches showed that PVDF membrane was capable of stimulating nerve tissue regrowth. For the tissue growth, a uniform growth is needed for some case. However, PVDF based membrane promote the localized tissue growth due to the fact that charge generated by piezo effect is dependent on the stress, which is not uniform. Here, a new membrane based on core-shell structure is prepared. The core-shell structure utilized PVDF as the core and conductive polymer, PPy, as the shell. Therefore, charge generated by piezo effect at one location can redistribute through surface of membrane. Coaxial electrospinning was utilized to form two types of flexible PVDF/PPy core-shell nanofibrous membranes, random fiber (RF) and aligned fiber (AF). AF was achieved by a rotating collector. This structural anisotropy leads to conductivity in certain direction and also promotes cell regeneration along axonal direction. To achieve optimized result, different specimens were fabricated using different concentration of PPy or PVDF. Morphologies of the specimens were observed by Scanning Electron Microscope.
{"title":"PVDF/PPy nanofibrous membranes for peripheral nerve lesion treatments","authors":"Liangxi Li, Jonathan Cook, Zhongyang Cheng, Xinyu Zhang","doi":"10.1109/ISAF.2017.8000209","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000209","url":null,"abstract":"Peripheral nerve lesion treatments attract extensive attention. One of the most promising treatments is guidance scaffold. It promotes cell adhesion and proliferation and their axonal growth to distal stump. PVDF was chosen as the scaffolding material due to its flexibility and piezoelectric effect. Several researches showed that PVDF membrane was capable of stimulating nerve tissue regrowth. For the tissue growth, a uniform growth is needed for some case. However, PVDF based membrane promote the localized tissue growth due to the fact that charge generated by piezo effect is dependent on the stress, which is not uniform. Here, a new membrane based on core-shell structure is prepared. The core-shell structure utilized PVDF as the core and conductive polymer, PPy, as the shell. Therefore, charge generated by piezo effect at one location can redistribute through surface of membrane. Coaxial electrospinning was utilized to form two types of flexible PVDF/PPy core-shell nanofibrous membranes, random fiber (RF) and aligned fiber (AF). AF was achieved by a rotating collector. This structural anisotropy leads to conductivity in certain direction and also promotes cell regeneration along axonal direction. To achieve optimized result, different specimens were fabricated using different concentration of PPy or PVDF. Morphologies of the specimens were observed by Scanning Electron Microscope.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"468 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134127680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.1109/ISAF.2017.8000207
Julio Isla, F. Cegla
Electromagnetic-acoustic transducers (EMATs) consist of a magnet and a coil. They are desirable for non-destructive evaluation (NDE) because no direct contact with the specimen is required. However, most EMATs use excitation peak powers greater than 1 kW and hence the driving electronics and the EMAT coils have to be bulky. This has hindered the development of EMAT phased arrays that have functionality and dimensions similar to those of conventional piezoelectric phased arrays, which are widely used in NDE because they offer superior defect characterization in comparison with single-element transducers. In this paper, an EMAT phased array that performs similarly to conventional piezoelectric arrays, uses excitation peak powers not greater than 4.8 W (24 Vpp and 200mA) and have racetrack coils as narrow as 3 mm is reported; this is possible due to the utilisation of coded excitation. The racetrack coils are laid out overlapping 1/3 of their area in their shortest dimension to reduce the crosstalk between the coils to less than −15 dB. An 8-element prototype that operates at a central frequency of 1 MHz is shown to detect defects which have a cross-section area of 0.2×0.8mm2 and are located on the surface opposite to the array.
电磁声换能器(emat)由磁铁和线圈组成。由于不需要与试样直接接触，因此它们在无损评价(NDE)中是理想的。然而，大多数EMAT使用大于1kw的激励峰值功率，因此驱动电子设备和EMAT线圈必须体积庞大。这阻碍了EMAT相控阵的发展，这些相控阵具有与传统压电相控阵相似的功能和尺寸，传统压电相控阵被广泛用于无损检测，因为与单元件换能器相比，它们提供了更好的缺陷表征。本文报道了一种EMAT相控阵，其性能与传统压电阵列相似，激励峰值功率不大于4.8 W (24 Vpp和200mA)，赛道线圈窄至3mm;这是可能的，由于利用编码激励。赛道线圈在其最小尺寸上重叠1/3的面积，以减少线圈之间的串扰至小于- 15 dB。在1 MHz的中心频率下工作的8元素原型显示用于检测具有0.2×0.8mm2横截面面积且位于阵列对面表面的缺陷。
{"title":"EMAT phased array probe for detecting surface cracks","authors":"Julio Isla, F. Cegla","doi":"10.1109/ISAF.2017.8000207","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000207","url":null,"abstract":"Electromagnetic-acoustic transducers (EMATs) consist of a magnet and a coil. They are desirable for non-destructive evaluation (NDE) because no direct contact with the specimen is required. However, most EMATs use excitation peak powers greater than 1 kW and hence the driving electronics and the EMAT coils have to be bulky. This has hindered the development of EMAT phased arrays that have functionality and dimensions similar to those of conventional piezoelectric phased arrays, which are widely used in NDE because they offer superior defect characterization in comparison with single-element transducers. In this paper, an EMAT phased array that performs similarly to conventional piezoelectric arrays, uses excitation peak powers not greater than 4.8 W (24 Vpp and 200mA) and have racetrack coils as narrow as 3 mm is reported; this is possible due to the utilisation of coded excitation. The racetrack coils are laid out overlapping 1/3 of their area in their shortest dimension to reduce the crosstalk between the coils to less than −15 dB. An 8-element prototype that operates at a central frequency of 1 MHz is shown to detect defects which have a cross-section area of 0.2×0.8mm2 and are located on the surface opposite to the array.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"270 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123054424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.1109/ISAF.2017.8000219
D. Saya, D. Dezest, T. Leïchlé, F. Mathieu, L. Nicu, O. Thomas, A. Welsh, S. Trolier-McKinstry
We report on the fabrication and characterization of lead zirconate titanate (PZT)-coated cantilever resonators for the realization of piezoelectric nanoelectromechanical systems (NEMS) with integrated actuation and detection capabilities. PZT is deposited by microcontact printing, resulting in a relatively thin PZT film without deterioration of its piezoelectric properties induced by etching damage. The cantilever fabrication process is based on stepper ultraviolet lithography and standard micromaching. Electrical characterization was carried out with a dedicated electrical set-up enabling the devices' resonance frequency to be detected through the piezoelectric response. These characterizations validate the simultaneous actuation and detection capability of the PZT layer. Finally, modeling of the PZT cantilever results in the estimation of the piezoelectric coupling coefficient d*31. We have found excellent large signal d*31 of around 200 pm/V, even for PZT cantilevers with reduced dimensions.
{"title":"Fabrication and characterization of mechanical resonators integrating microcontact printed PZT films","authors":"D. Saya, D. Dezest, T. Leïchlé, F. Mathieu, L. Nicu, O. Thomas, A. Welsh, S. Trolier-McKinstry","doi":"10.1109/ISAF.2017.8000219","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000219","url":null,"abstract":"We report on the fabrication and characterization of lead zirconate titanate (PZT)-coated cantilever resonators for the realization of piezoelectric nanoelectromechanical systems (NEMS) with integrated actuation and detection capabilities. PZT is deposited by microcontact printing, resulting in a relatively thin PZT film without deterioration of its piezoelectric properties induced by etching damage. The cantilever fabrication process is based on stepper ultraviolet lithography and standard micromaching. Electrical characterization was carried out with a dedicated electrical set-up enabling the devices' resonance frequency to be detected through the piezoelectric response. These characterizations validate the simultaneous actuation and detection capability of the PZT layer. Finally, modeling of the PZT cantilever results in the estimation of the piezoelectric coupling coefficient d*31. We have found excellent large signal d*31 of around 200 pm/V, even for PZT cantilevers with reduced dimensions.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127348684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.1109/ISAF.2017.8000208
P. Kondekar, Bhaskar Awadhiya
In this work we have investigated the performance of UTBB FDSOI-NCFET with different dielectric and gate materials. Variation in ION/IOFF and subthreshold swing with these parameters has also been studied. Effect of varying ferroelectric properties such as coercive field and remanent polarization has been demonstrated. The basic idea here is to find out an optimum configuration for dielectric and gate materials which should be used so as to get better performance of the device. We have validated our simulation using TCAD simulator. Here, we have taken PZT (Lead zirconium titnate) as a ferroelectric material because it possesses many advantages like high dielectric constant and nano-second polarization reversal. This device is a unique amalgamation of Negative capacitance transistor and FDSOI. Negative capacitance provides low subthreshold swing and FDSOI ensures suppression of short channel effects and hence UTBB FDSOI-NCFET is a viable candidate for future low power transistors.
{"title":"Effect of parameter variation in UTBB FDSOINCFET","authors":"P. Kondekar, Bhaskar Awadhiya","doi":"10.1109/ISAF.2017.8000208","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000208","url":null,"abstract":"In this work we have investigated the performance of UTBB FDSOI-NCFET with different dielectric and gate materials. Variation in ION/IOFF and subthreshold swing with these parameters has also been studied. Effect of varying ferroelectric properties such as coercive field and remanent polarization has been demonstrated. The basic idea here is to find out an optimum configuration for dielectric and gate materials which should be used so as to get better performance of the device. We have validated our simulation using TCAD simulator. Here, we have taken PZT (Lead zirconium titnate) as a ferroelectric material because it possesses many advantages like high dielectric constant and nano-second polarization reversal. This device is a unique amalgamation of Negative capacitance transistor and FDSOI. Negative capacitance provides low subthreshold swing and FDSOI ensures suppression of short channel effects and hence UTBB FDSOI-NCFET is a viable candidate for future low power transistors.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126915438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.1109/ISAF.2017.8000223
L. Wang, S.M. Chen, X. Ning, Z. Chen, J.T. Liu, J.Y. Zhang
In this work, we report the development and realization of ultrahigh-frequency, high-performance nano interdigital transducers (n-IDTs) for generation of surface acoustic wave (SAW) on aluminum nitride (AlN)/diamond/Si substrates, where the metal fingers are embedded in the AlN film. The well-defined n-IDTs' resolution down to 200 nm were obtained using electron beam lithography, inductively coupled plasma (ICP) etching and lift-off processing. The fabricated SAW resonators exhibit response at a ultrahigh-frequency range, as high as 9.94 GHz, with stronger intensities of S11 peaks compared with normal transducer devices. The good high-frequency characteristics of the embedded n-IDTs and compatibility with existing fabrication technologies pave the way for the realization of advanced sensors and monolithic integrated MMICs on AlN/diamond/Si substrates for the high frequency and high power applications.
{"title":"Embedded nanotransducer for ultrahigh-frequency SAW utilizing AlN/diamond layered structure","authors":"L. Wang, S.M. Chen, X. Ning, Z. Chen, J.T. Liu, J.Y. Zhang","doi":"10.1109/ISAF.2017.8000223","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000223","url":null,"abstract":"In this work, we report the development and realization of ultrahigh-frequency, high-performance nano interdigital transducers (n-IDTs) for generation of surface acoustic wave (SAW) on aluminum nitride (AlN)/diamond/Si substrates, where the metal fingers are embedded in the AlN film. The well-defined n-IDTs' resolution down to 200 nm were obtained using electron beam lithography, inductively coupled plasma (ICP) etching and lift-off processing. The fabricated SAW resonators exhibit response at a ultrahigh-frequency range, as high as 9.94 GHz, with stronger intensities of S11 peaks compared with normal transducer devices. The good high-frequency characteristics of the embedded n-IDTs and compatibility with existing fabrication technologies pave the way for the realization of advanced sensors and monolithic integrated MMICs on AlN/diamond/Si substrates for the high frequency and high power applications.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126397498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.1109/ISAF.2017.8000224
G. Yesner, A. Safari
Acceptor doping is used to achieve hard piezoelectric properties by inducing oxygen vacancies. In Bi0.5Na0.5TiO3 (BNT) based ceramics, modifying the A-site stoichiometry can be used to achieve similar effect as acceptor doping, such as bismuth deficiency that induces oxygen vacancies. In this work 0.88Bi0.50−xNa0.50TiO3 - 0.08Bi0.50−xK0.50TiO3 - 0.04BaTiO3 (BNKBT88-xBi) ceramics with bismuth deficiency x≥0.02 have been prepared. The Bi-deficient ceramics have low dielectric loss, high mechanical quality factor of 1200, and coercive field of 48kV/cm. However, at elevated temperature the mobility of oxygen vacancies decreases resistivity, limiting the use of these ceramics for high power transducer application. The addition of bismuth oxide to the calcined Bi-deficient compositions improves piezoelectric, dielectric, ferroelectric, and electrical properties at elevated temperature. Mechanical quality factor over 900 was achieved for small Bi2O3 addition.
{"title":"Improved resistivity in bismuth deficient morphotropic phase boundary 0.88BNT-0.08BKT-0.04BT ceramics","authors":"G. Yesner, A. Safari","doi":"10.1109/ISAF.2017.8000224","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000224","url":null,"abstract":"Acceptor doping is used to achieve hard piezoelectric properties by inducing oxygen vacancies. In Bi<inf>0.5</inf>Na<inf>0.5</inf>TiO<inf>3</inf> (BNT) based ceramics, modifying the A-site stoichiometry can be used to achieve similar effect as acceptor doping, such as bismuth deficiency that induces oxygen vacancies. In this work 0.88Bi<inf>0.50−x</inf>Na<inf>0.50</inf>TiO<inf>3</inf> - 0.08Bi<inf>0.50−x</inf>K<inf>0.50</inf>TiO<inf>3</inf> - 0.04BaTiO<inf>3</inf> (BNKBT88-xBi) ceramics with bismuth deficiency x≥0.02 have been prepared. The Bi-deficient ceramics have low dielectric loss, high mechanical quality factor of 1200, and coercive field of 48kV/cm. However, at elevated temperature the mobility of oxygen vacancies decreases resistivity, limiting the use of these ceramics for high power transducer application. The addition of bismuth oxide to the calcined Bi-deficient compositions improves piezoelectric, dielectric, ferroelectric, and electrical properties at elevated temperature. Mechanical quality factor over 900 was achieved for small Bi<inf>2</inf>O<inf>3</inf> addition.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127880856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.1109/ISAF.2017.8000221
H. Talebinezhad, Y. Tong, X. Lu, Z. Cheng
In this study, the electrical behavior of CCTO/SiO2 composites have been analyzed. The ceramic composite was made of CaCu3Ti4O12 coated with SiO2 by sol-gel method. The composites were made of SiO2 concentration and sintered in different temperature. The effect of SiO2 concentration and sintering temperature on the microstructure and non-ohmic behavior of composites were investigated. The breakdown electrical field for composite of CCTO can improve from 1.96 KV/cm to 40 KV/cm by adding SiO2 due to the formation of a resistive layer in grainboundaries. The nonlinear coefficient of the sample is influenced by changing the Schottky barrier parameters to reach 3.8, which is predicted by conductivity behavior. It is believed that, the formation of the liquid phase caused the increase in diffusion which altered the conductivity of grainboundaries and affected the height and width of the potential barrier. The SEM pictures were conducted to illustrate the change in the microstructure of samples. The increase in the sintering temperature and emerge liquid phase results in grain growth.
{"title":"Dielectric behavior and non-ohmic behavior of CCTO/SiO2 composites","authors":"H. Talebinezhad, Y. Tong, X. Lu, Z. Cheng","doi":"10.1109/ISAF.2017.8000221","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000221","url":null,"abstract":"In this study, the electrical behavior of CCTO/SiO2 composites have been analyzed. The ceramic composite was made of CaCu3Ti4O12 coated with SiO2 by sol-gel method. The composites were made of SiO2 concentration and sintered in different temperature. The effect of SiO2 concentration and sintering temperature on the microstructure and non-ohmic behavior of composites were investigated. The breakdown electrical field for composite of CCTO can improve from 1.96 KV/cm to 40 KV/cm by adding SiO2 due to the formation of a resistive layer in grainboundaries. The nonlinear coefficient of the sample is influenced by changing the Schottky barrier parameters to reach 3.8, which is predicted by conductivity behavior. It is believed that, the formation of the liquid phase caused the increase in diffusion which altered the conductivity of grainboundaries and affected the height and width of the potential barrier. The SEM pictures were conducted to illustrate the change in the microstructure of samples. The increase in the sintering temperature and emerge liquid phase results in grain growth.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"321 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115838329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.1109/ISAF.2017.8000202
Xiukai Cai, Xiaobo Sun, Lufeng Pang
Co-fired multiplayer ceramic capacitors sintered at lower temperatures than the melting point of silver electrode, are required to have excellent reliabilities. So the interface behaviors between bismuth-based dielectrics and silver metallic electrode, have been attracted wide attentions. Now it was found that the bismuth-based dielectric ceramics show deteriorated properties towards higher silver-fired temperatures. The silver's distributions in the vicinity of the interface layer were quantitatively determined by Scanning Electron Microscopy with Energy Dispersive Spectroscopy, it is duo to the metallic electrode silver to be diffused into the dielectric layer, that go bad the dielectric properties.
{"title":"Interface diffusion of silver electrode into bismuth-based ceramics and its effects on the dielectric properties","authors":"Xiukai Cai, Xiaobo Sun, Lufeng Pang","doi":"10.1109/ISAF.2017.8000202","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000202","url":null,"abstract":"Co-fired multiplayer ceramic capacitors sintered at lower temperatures than the melting point of silver electrode, are required to have excellent reliabilities. So the interface behaviors between bismuth-based dielectrics and silver metallic electrode, have been attracted wide attentions. Now it was found that the bismuth-based dielectric ceramics show deteriorated properties towards higher silver-fired temperatures. The silver's distributions in the vicinity of the interface layer were quantitatively determined by Scanning Electron Microscopy with Energy Dispersive Spectroscopy, it is duo to the metallic electrode silver to be diffused into the dielectric layer, that go bad the dielectric properties.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116120747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.1109/ISAF.2017.8000218
Martin Safar, T. Button, Marek Zabcik
The relatively low melting point of lead oxide (approx. 900 °C) has always presented an issue in the processing of lead zirconium titanate (PZT) piezoelectric ceramics. The loss of PbO at high sintering temperatures (up to 1300 °C) can cause undesirable changes in stoichiometry, phase composition and electrical properties of the final ceramic product. In high-volume production, the PbO loss per piece is low and, with a small excess of lead oxide in the initial powder composition, it is usually sufficient to sinter samples in enclosed crucibles. Small-scale lab processing requires better atmosphere control, usually implemented by surrounding the sample in a lead oxide-containing powder bed. Such control is required in order to prepare samples for detailed composition- microstructure-property studies. In this work, a typical industrial sintering program with slow heating rate and long dwell time was used to sinter hard PZT samples (NCE40 supplied by Noliac) at 1260 °C in a laboratory furnace. It was found that conventionally used powder beds such as PZT or PbZrO3 mixed in different ratios with ZrO2 were either difficult to separate from the crucible/samples or not able to sufficiently prevent the weight loss of the samples. Excessive PbO loss was indicated by the presence of ZrO2 secondary phase in sintered samples. Weight loss of individual samples, and their resulting electrical properties, varied depending on the composition and particle size of the powder bed. An alternative powder bed consisting of ZrO2 sand reacted with PbO was found to sufficiently reduce the PbO loss in the samples (no secondary phase detected) while being easily separated from both the samples and crucible after sintering, and maintaining good piezoelectric properties in the sintered samples.
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2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)
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