2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)最新文献
Aluminum nitride (AlN) is widely used in SAW/FBAR devices, energy harvesting, biosensors, and ultrasonic transducers. The preparation of high-quality AlN film plays the key role on the process integration with CMOS circuits. Here, we report an AlN thin film prepared by RF reactive sputtering at room temperature on substrate with different treatments, which is more suitable and economical for CMOS-compatible MEMS fabrication compared with previous works. The AlN thin film was deposited on Si/SiO2/Si3N4 with different surface roughness, which were commonly employed as insulating layers or device layers in CMOS circuits. The morphological characterization by AFM and SEM showed that the AlN thin film was uniform and compact with low roughness and fine grain. The bottom Mo electrode was prepared by DC sputtering at room temperature. In addition, AlN seed layer from the same sputtering process increased the adhesion between the electrode and the substrate, thereby improving the stability of subsequent processes. In summary, we prepared uniform AlN with few defects by a simple and controllable approach. This strategy is potentially applied to CMOS-compatible optical and acoustic devices.
{"title":"RF reactive sputtering AlN thin film at room temperature for CMOS-compatible MEMS application","authors":"Wenjuan Liu, Weijiang Xu, Weizhen Wang, Leming He, Jia Zhou, K. Radhakrishnan, Hao Yu, Junyan Ren","doi":"10.1109/ISAF.2017.8000210","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000210","url":null,"abstract":"Aluminum nitride (AlN) is widely used in SAW/FBAR devices, energy harvesting, biosensors, and ultrasonic transducers. The preparation of high-quality AlN film plays the key role on the process integration with CMOS circuits. Here, we report an AlN thin film prepared by RF reactive sputtering at room temperature on substrate with different treatments, which is more suitable and economical for CMOS-compatible MEMS fabrication compared with previous works. The AlN thin film was deposited on Si/SiO2/Si3N4 with different surface roughness, which were commonly employed as insulating layers or device layers in CMOS circuits. The morphological characterization by AFM and SEM showed that the AlN thin film was uniform and compact with low roughness and fine grain. The bottom Mo electrode was prepared by DC sputtering at room temperature. In addition, AlN seed layer from the same sputtering process increased the adhesion between the electrode and the substrate, thereby improving the stability of subsequent processes. In summary, we prepared uniform AlN with few defects by a simple and controllable approach. This strategy is potentially applied to CMOS-compatible optical and acoustic devices.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127885534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.1109/ISAF.2017.8000200
Daw A. Asderah, T. Kalkur
In this paper, a finite element method and multiphysics based 3D modeling of tunable ferroelectric thin film resonator taking the advantages of electrostrictive and piezoelectric effects of Ba0.8Sr0.2TiO3 thin film. DC electrical field dependency of the dielectric permittivity and elasticity coefficients can control the resonances in the thin film. The resonator has a series resonant frequency of 4.33 GHz and parallel resonance at 4.43 GHz with applied DC voltage of 2 V. The electromechanical coupling coefficient is measured at 5.4% and increased to be 8% with the biasing voltage at 8V.
{"title":"FEM based modeling of tunable BAW resonators with Ba0.8Sr0.2TiO3","authors":"Daw A. Asderah, T. Kalkur","doi":"10.1109/ISAF.2017.8000200","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000200","url":null,"abstract":"In this paper, a finite element method and multiphysics based 3D modeling of tunable ferroelectric thin film resonator taking the advantages of electrostrictive and piezoelectric effects of Ba0.8Sr0.2TiO3 thin film. DC electrical field dependency of the dielectric permittivity and elasticity coefficients can control the resonances in the thin film. The resonator has a series resonant frequency of 4.33 GHz and parallel resonance at 4.43 GHz with applied DC voltage of 2 V. The electromechanical coupling coefficient is measured at 5.4% and increased to be 8% with the biasing voltage at 8V.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132652028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.1109/ISAF.2017.8000216
E. Politova, N. Golubko, G. Kaleva, A. Mosunov, N. Sadovskaya, D. A. Belkova, S. Stefanovich
Influence of Bi(Mg0.5Ti0.5)O3 (BMT) and KCl additives on phase formation, crystal structure, microstructure, dielectric and ferroelectric properties of ceramics with compositions close to the Morphotropic Phase Boundary in the (Na0.5Bi0.5)TiO3 - BaTiO3 (NBT-BT) system has been studied. The results obtained proved that modification of NBT-BT compositions by BMT and KCl additives promoted to improvement of dielectric properties.
{"title":"Influence of KCl additives on ferroelectric peroperties of NBT-based ceramics","authors":"E. Politova, N. Golubko, G. Kaleva, A. Mosunov, N. Sadovskaya, D. A. Belkova, S. Stefanovich","doi":"10.1109/ISAF.2017.8000216","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000216","url":null,"abstract":"Influence of Bi(Mg<inf>0.5</inf>Ti<inf>0.5</inf>)O<inf>3</inf> (BMT) and KCl additives on phase formation, crystal structure, microstructure, dielectric and ferroelectric properties of ceramics with compositions close to the Morphotropic Phase Boundary in the (Na<inf>0.5</inf>Bi<inf>0.5</inf>)TiO<inf>3</inf> - BaTiO<inf>3</inf> (NBT-BT) system has been studied. The results obtained proved that modification of NBT-BT compositions by BMT and KCl additives promoted to improvement of dielectric properties.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131329704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.1109/ISAF.2017.8000225
G. Yesner, A. Safari, A. Jasim, H. Wang, B. Basily, A. Maher
A novel piezoelectric bridge transducer was developed for an energy harvesting application from vehicle induced loading on pavement. A unique electrode design enables the PZT to be poled horizontally, enabling the d33 piezoelectric coefficient to be utilized by the transducer, enhancing energy output. The transducers were fabricated and assembled in an energy harvesting module and the output energy and power was measured under simulated vehicle loading. In this work, the effective piezoelectric coefficient of the transducer has been measured using the direct piezoelectric effect as well as the converse piezoelectric effect to evaluate the transducer for an actuator or sensor application. The effective d33 measured by the direct method is 19,000 pC/N and the g33 is 2150 × 10−3 Vm/N. The reliability and cycles to failure of the transducer design is studied and the transducers are evaluated after 50,000 loading cycles. Inconsistency in the epoxy layer thickness has been identified as the cause of premature failure.
{"title":"Evaluation of a novel piezoelectric bridge transducer","authors":"G. Yesner, A. Safari, A. Jasim, H. Wang, B. Basily, A. Maher","doi":"10.1109/ISAF.2017.8000225","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000225","url":null,"abstract":"A novel piezoelectric bridge transducer was developed for an energy harvesting application from vehicle induced loading on pavement. A unique electrode design enables the PZT to be poled horizontally, enabling the d33 piezoelectric coefficient to be utilized by the transducer, enhancing energy output. The transducers were fabricated and assembled in an energy harvesting module and the output energy and power was measured under simulated vehicle loading. In this work, the effective piezoelectric coefficient of the transducer has been measured using the direct piezoelectric effect as well as the converse piezoelectric effect to evaluate the transducer for an actuator or sensor application. The effective d33 measured by the direct method is 19,000 pC/N and the g33 is 2150 × 10−3 Vm/N. The reliability and cycles to failure of the transducer design is studied and the transducers are evaluated after 50,000 loading cycles. Inconsistency in the epoxy layer thickness has been identified as the cause of premature failure.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129257472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.1109/ISAF.2017.8000226
Tai-Ho Yu
This thesis presents a study on Lamb waves excited by the inter-digital transducers (IDT) deposited on piezoelectric ceramic plates in thickness mode and thickness shear mode. The Lamb wave response in frequency and time domains are evaluated numerically. Based on the approach provided by Engan (1969) on electric field from a surface wave inter-digital transducer with small piezoelectric coupling assumption, the electric field induced by the inter-digital transducer on piezoelectric plates is solved and expressed in a series with the coefficients containing Legendre functions. The approximate electric potential on surface is employed as the continuous boundary conditions to evaluate the Lamb wave response generated in the piezoelectric plates. Computation of the frequency response of Lamb waves from inter-digital transducer is carried out through a one- dimensional wave number integration using a modified Clenshaw-Curits numerical scheme. The time domain responses are calculated from frequency responses through the inverse fast Fourier transform. The S0 mode excited by inter-digital transducer has response as large as the A0 mode in piezoelectric plate of thickness mode. It is seldom found in the plate excited by time-variation of surface traction. The Lamb wave responses due to different numbers and widths of surface inter-digital transducers are also investigated.
{"title":"Modeling of Lamb waves excited by inter-digital transducers deposited on piezoelectric plates","authors":"Tai-Ho Yu","doi":"10.1109/ISAF.2017.8000226","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000226","url":null,"abstract":"This thesis presents a study on Lamb waves excited by the inter-digital transducers (IDT) deposited on piezoelectric ceramic plates in thickness mode and thickness shear mode. The Lamb wave response in frequency and time domains are evaluated numerically. Based on the approach provided by Engan (1969) on electric field from a surface wave inter-digital transducer with small piezoelectric coupling assumption, the electric field induced by the inter-digital transducer on piezoelectric plates is solved and expressed in a series with the coefficients containing Legendre functions. The approximate electric potential on surface is employed as the continuous boundary conditions to evaluate the Lamb wave response generated in the piezoelectric plates. Computation of the frequency response of Lamb waves from inter-digital transducer is carried out through a one- dimensional wave number integration using a modified Clenshaw-Curits numerical scheme. The time domain responses are calculated from frequency responses through the inverse fast Fourier transform. The S0 mode excited by inter-digital transducer has response as large as the A0 mode in piezoelectric plate of thickness mode. It is seldom found in the plate excited by time-variation of surface traction. The Lamb wave responses due to different numbers and widths of surface inter-digital transducers are also investigated.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123193609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.1109/ISAF.2017.8000204
Xiukai Cai, Xiaobo Sun, Lufeng Pang
Bismuth nickel niobate was prepared by conventional solid state reaction technique. Dense ceramic body was obtained at low sintering temperatures. In Bi2O3-NiO-Nb2O5 ternary oxide system, the structure and dielectric properties of several compositions along the selected NiO:Nb2O5=1∶1 composition line, have been investigated by X-ray diffraction analyses and temperature dependences of dielectric constant and loss factor. Cubic pyrochlore, tetragonal pyrochlore, and other unknown phases occur in the concerned compositions. Small negative temperature coefficient of dielectric constant has been reported. The low temperature dielectric relaxation, common to almost all compositions, has been curve fitted according to the ε-T empirical equation of ferroelectrics. The index factor is 1.4 or so, corresponding to the ferroelectric relaxation.
{"title":"Bismuth nickel niobate with small negative temperature coefficients of dielectric constant","authors":"Xiukai Cai, Xiaobo Sun, Lufeng Pang","doi":"10.1109/ISAF.2017.8000204","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000204","url":null,"abstract":"Bismuth nickel niobate was prepared by conventional solid state reaction technique. Dense ceramic body was obtained at low sintering temperatures. In Bi2O3-NiO-Nb2O5 ternary oxide system, the structure and dielectric properties of several compositions along the selected NiO:Nb2O5=1∶1 composition line, have been investigated by X-ray diffraction analyses and temperature dependences of dielectric constant and loss factor. Cubic pyrochlore, tetragonal pyrochlore, and other unknown phases occur in the concerned compositions. Small negative temperature coefficient of dielectric constant has been reported. The low temperature dielectric relaxation, common to almost all compositions, has been curve fitted according to the ε-T empirical equation of ferroelectrics. The index factor is 1.4 or so, corresponding to the ferroelectric relaxation.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134170440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.1109/ISAF.2017.8000211
Y. Tong, H. Talebinezhad, Jiachen Liu, Yancen Cai, Z.Y. Cheng, X. Lu, Liang Wang
In this paper, a series of BaTiO3-SiO2 composites were fabricated by using a combined process of SiO2 wet chemical coating and conventional ceramic process, and the effects of SiO2 coating on microstructures, dielectric and ferroelectric properties were investigated. XRD diffraction patterns illustrated a typical perovskite structure of the SiO2 coated BaTiO3 particles, which confirmed an amorphous phase of the coated SiO2 shell. A secondary phase, BaTiSiO5, was obvious in the sintered composites, which was caused by the interface reaction of BaTiO3 cores and SiO2 shells and has great effects on the properties. It was found that dielectric constant decreased with increasing content of SiO2 in composites and the dielectric constant peak associated with dielectric temperature dependence curve was suppressed accordingly. The P-E loop of composites got slimmer and polarization decreased with increasing content of SiO2, while the breakdown strength could be remarkable enhanced.
{"title":"Effects of SiO2 coating on the dielectric and ferroelectric properties of BaTiO3-SiO2 composites","authors":"Y. Tong, H. Talebinezhad, Jiachen Liu, Yancen Cai, Z.Y. Cheng, X. Lu, Liang Wang","doi":"10.1109/ISAF.2017.8000211","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000211","url":null,"abstract":"In this paper, a series of BaTiO<inf>3</inf>-SiO<inf>2</inf> composites were fabricated by using a combined process of SiO<inf>2</inf> wet chemical coating and conventional ceramic process, and the effects of SiO<inf>2</inf> coating on microstructures, dielectric and ferroelectric properties were investigated. XRD diffraction patterns illustrated a typical perovskite structure of the SiO<inf>2</inf> coated BaTiO<inf>3</inf> particles, which confirmed an amorphous phase of the coated SiO<inf>2</inf> shell. A secondary phase, BaTiSiO<inf>5</inf>, was obvious in the sintered composites, which was caused by the interface reaction of BaTiO<inf>3</inf> cores and SiO<inf>2</inf> shells and has great effects on the properties. It was found that dielectric constant decreased with increasing content of SiO<inf>2</inf> in composites and the dielectric constant peak associated with dielectric temperature dependence curve was suppressed accordingly. The P-E loop of composites got slimmer and polarization decreased with increasing content of SiO<inf>2</inf>, while the breakdown strength could be remarkable enhanced.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115519963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.1109/ISAF.2017.8000212
C. Mangeot
Multilayer piezoelectric actuators, typically used in nano-positioning applications under high electrical field excitation, are affected by hysteresis, which limits their applications in terms of open-loop positioning and stability in closed-loop systems. In this paper, a reduced Preisach model superimposed to a linear response is applied. With only 5 parameters, the model shows a good match to experimental data, with peak errors below 1%. The variation of model parameters with temperature is analyzed in the range 25–200°C. Results show that the linear term increases while the Preisach density becomes narrower at high temperature, exemplifying the higher domain wall mobility. Such a model can be used within a feed-forward control to improve positioning accuracy and reduce response time.
{"title":"Reduced hysteresis model and temperature dependency of multilayer piezo actuators","authors":"C. Mangeot","doi":"10.1109/ISAF.2017.8000212","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000212","url":null,"abstract":"Multilayer piezoelectric actuators, typically used in nano-positioning applications under high electrical field excitation, are affected by hysteresis, which limits their applications in terms of open-loop positioning and stability in closed-loop systems. In this paper, a reduced Preisach model superimposed to a linear response is applied. With only 5 parameters, the model shows a good match to experimental data, with peak errors below 1%. The variation of model parameters with temperature is analyzed in the range 25–200°C. Results show that the linear term increases while the Preisach density becomes narrower at high temperature, exemplifying the higher domain wall mobility. Such a model can be used within a feed-forward control to improve positioning accuracy and reduce response time.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"250 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131814083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-21DOI: 10.1109/ISAF.2017.8000201
S. Butler
This paper provides a qualitative study with regards to feasibility of using a negative DC biasing approach to apply a mechanical compressive stress to a transducer's piezoelectric ceramic stack instead using a stress bolt. A typical underwater Tonpilz longitudinal-type transducer is made up of four major parts, a piezoelectric ceramic drive element that is sandwiched between two masses, a tail mass, a radiating head mass and a stress bolt. The stress bolt that passes through the ceramic stack and connects the head mass to the tail mass keeps the transducer parts together and keeps the ceramic element under a constant compressional stress. The compressive stress prevents the ceramic from going into tension and fracturing when driven under high AC drive conditions that exceed its low tensile strength. The typical compressive stresses applied by the stress bolt are 3000 to 6000 psi. When the transducer element lateral dimensions are small, compared with acoustic wavelength, there is little or no room for a stress bolt. An alternative method of applying a compressive preload without the stress bolt is achieved by applying a negative DC electric field across the piezoelectric ceramic stack which in turn causes the piezoelectric ceramic element to contract, resulting in an internal compressive stress. The plausible of this method will be discussed.
{"title":"Mechanical pre-stressing a transducer through a negative DC biasing field","authors":"S. Butler","doi":"10.1109/ISAF.2017.8000201","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000201","url":null,"abstract":"This paper provides a qualitative study with regards to feasibility of using a negative DC biasing approach to apply a mechanical compressive stress to a transducer's piezoelectric ceramic stack instead using a stress bolt. A typical underwater Tonpilz longitudinal-type transducer is made up of four major parts, a piezoelectric ceramic drive element that is sandwiched between two masses, a tail mass, a radiating head mass and a stress bolt. The stress bolt that passes through the ceramic stack and connects the head mass to the tail mass keeps the transducer parts together and keeps the ceramic element under a constant compressional stress. The compressive stress prevents the ceramic from going into tension and fracturing when driven under high AC drive conditions that exceed its low tensile strength. The typical compressive stresses applied by the stress bolt are 3000 to 6000 psi. When the transducer element lateral dimensions are small, compared with acoustic wavelength, there is little or no room for a stress bolt. An alternative method of applying a compressive preload without the stress bolt is achieved by applying a negative DC electric field across the piezoelectric ceramic stack which in turn causes the piezoelectric ceramic element to contract, resulting in an internal compressive stress. The plausible of this method will be discussed.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114961861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)
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