Pub Date : 1999-05-18DOI: 10.1109/INTMAG.1999.837252
H. Iwasaki, H. Fukuzawa, Y. Kamiguchi, H. Fuke, K. Saito, K. Koi, M. Sahashi
{"title":"Spin filter spin valve heads with ultrathin CoFe free layers","authors":"H. Iwasaki, H. Fukuzawa, Y. Kamiguchi, H. Fuke, K. Saito, K. Koi, M. Sahashi","doi":"10.1109/INTMAG.1999.837252","DOIUrl":"https://doi.org/10.1109/INTMAG.1999.837252","url":null,"abstract":"","PeriodicalId":425017,"journal":{"name":"IEEE International Magnetics Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129682352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A wave soldering system has been used for more than 50 years in the process of circuit board assembly, but the needs for maintenance-free operations, high solderability, and downsizing of the solder capacity have still not been met. To meet these requirements, the authors made practical use of a wave soldering system in which a direct thrust is applied to the molten solder by means of a linear electromagnetic pump, thus realizing maintenance-free system, a 1/10 to 1/20 reduction of the defect rate, and a 57% reduction of the solder capacity.
{"title":"Linear electromagnetic pump for automatic wave soldering system","authors":"J. Onozaki, T. Masuda, H. Saitohi, K. Takahashi","doi":"10.3379/JMSJMAG.23.1701","DOIUrl":"https://doi.org/10.3379/JMSJMAG.23.1701","url":null,"abstract":"A wave soldering system has been used for more than 50 years in the process of circuit board assembly, but the needs for maintenance-free operations, high solderability, and downsizing of the solder capacity have still not been met. To meet these requirements, the authors made practical use of a wave soldering system in which a direct thrust is applied to the molten solder by means of a linear electromagnetic pump, thus realizing maintenance-free system, a 1/10 to 1/20 reduction of the defect rate, and a 57% reduction of the solder capacity.","PeriodicalId":425017,"journal":{"name":"IEEE International Magnetics Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128231706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-18DOI: 10.1109/INTMAG.1999.837339
M. Iwasaka, S. Ueno
{"title":"Photooxidation of fibrinogen molecules under magnetic fields","authors":"M. Iwasaka, S. Ueno","doi":"10.1109/INTMAG.1999.837339","DOIUrl":"https://doi.org/10.1109/INTMAG.1999.837339","url":null,"abstract":"","PeriodicalId":425017,"journal":{"name":"IEEE International Magnetics Conference","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127473178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-18DOI: 10.1109/INTMAG.1999.837583
M. Komori, H. Koboyashi, C. Shiraishi
{"title":"New displacement sensor for a hybrid magnetic rearing in liquid nitrogen","authors":"M. Komori, H. Koboyashi, C. Shiraishi","doi":"10.1109/INTMAG.1999.837583","DOIUrl":"https://doi.org/10.1109/INTMAG.1999.837583","url":null,"abstract":"","PeriodicalId":425017,"journal":{"name":"IEEE International Magnetics Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130083288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-18DOI: 10.1109/INTMAG.1999.838034
Chang-Il Yang, Y. Baek
{"title":"Design and control of the 3 D.O.F. actuator by controlling the electromagnetic force","authors":"Chang-Il Yang, Y. Baek","doi":"10.1109/INTMAG.1999.838034","DOIUrl":"https://doi.org/10.1109/INTMAG.1999.838034","url":null,"abstract":"","PeriodicalId":425017,"journal":{"name":"IEEE International Magnetics Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130144705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-18DOI: 10.1109/INTMAG.1999.837734
A. G. Banshchikov, A. Kimel, V. Pavlov, R. Pisarev, N. Sokolov, T. Rasing
Nijmegen, The Netherlands Ferromagnetic-semiconductor heterosvuctures have attracted a great interest due to their potential for new opto-electmnic devices [I]. For such kind of devices it is important to know the interface and hulk magnetic properties of the ferromagnetic films. We present results
{"title":"Linear and nonlinear magneto-optical study of ferromagnetic thin films of MnAs grown on Si[111] substrates","authors":"A. G. Banshchikov, A. Kimel, V. Pavlov, R. Pisarev, N. Sokolov, T. Rasing","doi":"10.1109/INTMAG.1999.837734","DOIUrl":"https://doi.org/10.1109/INTMAG.1999.837734","url":null,"abstract":"Nijmegen, The Netherlands Ferromagnetic-semiconductor heterosvuctures have attracted a great interest due to their potential for new opto-electmnic devices [I]. For such kind of devices it is important to know the interface and hulk magnetic properties of the ferromagnetic films. We present results","PeriodicalId":425017,"journal":{"name":"IEEE International Magnetics Conference","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128900036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-18DOI: 10.1109/INTMAG.1999.837839
H. Boeve, J. Das, L. Lagae, P. Peumans, C. Bruynseraede, K. Dessein, L. Melo, R. Sousa, P. Freitas, G. Borghs, J. De Boeck
Although MRAM circuits can be fabricated without the need for an integrated semiconductor switch in each bit, most applications will require a DRAM-like floorplan with combined magnetlsemiconductor bits. In a first approach to assess the feasibility of such integration, we have integrated spin-valve structures with semiconductor diodes [I]. Further, in an [MEC I INESC collaboration (ESPRIT #28.229 I TI-MRAM) the integration feasibility of tunnel junctions is assessed. The main issues we are tackling are the fabrication of arrays of magnetic tunneljunction I semiconductor elements and the MTI performance as a function of the parameters of the integration pmcess. In this paper we present results of our assessment of MRAM circuits with magnetlsemiconductor bits.
虽然MRAM电路可以在不需要在每个位上集成半导体开关的情况下制造，但大多数应用将需要一个类似dram的平面图，并结合磁性半导体位。在评估这种集成可行性的第一种方法中，我们将自旋阀结构与半导体二极管集成在一起[1]。此外，在MEC I INESC合作(ESPRIT #28.229 I TI-MRAM)中，对隧道交叉口的集成可行性进行了评估。我们正在解决的主要问题是磁性隧道结I半导体元件阵列的制造以及MTI性能作为集成过程参数的函数。在本文中，我们介绍了我们对磁性半导体位的MRAM电路的评估结果。
{"title":"Technology assessment for MRAM cells with magnet/semiconductor bits","authors":"H. Boeve, J. Das, L. Lagae, P. Peumans, C. Bruynseraede, K. Dessein, L. Melo, R. Sousa, P. Freitas, G. Borghs, J. De Boeck","doi":"10.1109/INTMAG.1999.837839","DOIUrl":"https://doi.org/10.1109/INTMAG.1999.837839","url":null,"abstract":"Although MRAM circuits can be fabricated without the need for an integrated semiconductor switch in each bit, most applications will require a DRAM-like floorplan with combined magnetlsemiconductor bits. In a first approach to assess the feasibility of such integration, we have integrated spin-valve structures with semiconductor diodes [I]. Further, in an [MEC I INESC collaboration (ESPRIT #28.229 I TI-MRAM) the integration feasibility of tunnel junctions is assessed. The main issues we are tackling are the fabrication of arrays of magnetic tunneljunction I semiconductor elements and the MTI performance as a function of the parameters of the integration pmcess. In this paper we present results of our assessment of MRAM circuits with magnetlsemiconductor bits.","PeriodicalId":425017,"journal":{"name":"IEEE International Magnetics Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128903322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-18DOI: 10.1109/INTMAG.1999.837729
E. Stavrou, K. Roll, T. Suzuki
{"title":"Magnetic anisotropy and spin reorientation effects in Gd/[Fe,Co] multilayers for high density magneto-optical recording","authors":"E. Stavrou, K. Roll, T. Suzuki","doi":"10.1109/INTMAG.1999.837729","DOIUrl":"https://doi.org/10.1109/INTMAG.1999.837729","url":null,"abstract":"","PeriodicalId":425017,"journal":{"name":"IEEE International Magnetics Conference","volume":"179 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130208767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-18DOI: 10.1109/INTMAG.1999.837560
H. Sawairi, T. Satō
Introduction The magnetic propenies of Fe-based amorphous alloy ribbons are greatly deteriorated by impurities such as AI and Ti [l] , [2]. which have a tendency to remain as impurities in commercial grade raw materials. The use of high-purity materials is desirable, but this is disadvantageous from an economical viewpoint. The detenoration of the magnetic properties is attnbuted to compressive stress caused by formation of crystallized thin layers on the nbbon surfacc 01, however there are few systematic investigations about thecompressive stress. This study investigates the compressive stress induced by surface crystallization.
{"title":"Influence of tension on magnetic properties of surface-crystallized Fe-based amorphous ribbons","authors":"H. Sawairi, T. Satō","doi":"10.1109/INTMAG.1999.837560","DOIUrl":"https://doi.org/10.1109/INTMAG.1999.837560","url":null,"abstract":"Introduction The magnetic propenies of Fe-based amorphous alloy ribbons are greatly deteriorated by impurities such as AI and Ti [l] , [2]. which have a tendency to remain as impurities in commercial grade raw materials. The use of high-purity materials is desirable, but this is disadvantageous from an economical viewpoint. The detenoration of the magnetic properties is attnbuted to compressive stress caused by formation of crystallized thin layers on the nbbon surfacc 01, however there are few systematic investigations about thecompressive stress. This study investigates the compressive stress induced by surface crystallization.","PeriodicalId":425017,"journal":{"name":"IEEE International Magnetics Conference","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123715575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-18DOI: 10.1109/INTMAG.1999.837868
K. Parvin, M. Varasteh, C. Boekema, A. Krupski, W. S. Giles
Iron-based alloys have a rich array of structure and magnetic properties. Among these technologically important 304 stainless steel (also known as 'nonmagnetic' stainless steel) has interesting magnetic behavior, which is strongly structure dependent. 304 stainless steel is composed of 72 w% iron, 18 w% chromium, 8 w?? nickel and 2 WO? manganese. The stable phase is FCC and it is known to be paramagnetic with Curie-Weiss behavior down to about 140 K [I]. Films of 304SS deposited by high rate magnetron sputtering grow as metastable BCC due to rapid vapor quenching achieved in the sputter process These f h show ferromagnetic behavior with a saturation magnetization of I30 emdg and coercive field of 50 Oe [2-41. We have studied magnetic properties of as-deposited Cu-304SS multilayer films grown by magnetron sputtering as a function of multilayer period. We demonstrate hy magnetization measurement and Mossbauer spectroscopy that by varying the period one may achieve the growth of metastable ferromagnetic BCC phase or stable nonmagnetic FCC phase, The mixture of these two is also possible, which is characterized by weak ferromagnetic behavior.
铁基合金具有丰富的结构和磁性能。在这些技术上重要的304不锈钢(也被称为“非磁性”不锈钢)具有有趣的磁性行为，这是强烈依赖于结构。304不锈钢由72w %铁，18w %铬，8w ?镍和2wo ?锰。稳定相为FCC，已知为顺磁性，居里-魏斯行为低至约140 K [I]。高速率磁控溅射沉积的304SS薄膜由于溅射过程中的快速气相淬火而生长为亚稳态BCC，这些薄膜在饱和磁化强度为I30 emdg和矫顽力为50 Oe时表现出铁磁性行为[2-41]。研究了磁控溅射法制备Cu-304SS多层膜的磁性能随多层膜周期的变化规律。我们证明了为什么磁化测量和穆斯堡尔谱表明，通过改变周期可以实现亚稳铁磁BCC相或稳定的非磁性FCC相的生长，这两种相也可能混合，其特征是弱铁磁行为。
{"title":"Control of magnetic properties and structure in copper-304 stainless steel multilayer films","authors":"K. Parvin, M. Varasteh, C. Boekema, A. Krupski, W. S. Giles","doi":"10.1109/INTMAG.1999.837868","DOIUrl":"https://doi.org/10.1109/INTMAG.1999.837868","url":null,"abstract":"Iron-based alloys have a rich array of structure and magnetic properties. Among these technologically important 304 stainless steel (also known as 'nonmagnetic' stainless steel) has interesting magnetic behavior, which is strongly structure dependent. 304 stainless steel is composed of 72 w% iron, 18 w% chromium, 8 w?? nickel and 2 WO? manganese. The stable phase is FCC and it is known to be paramagnetic with Curie-Weiss behavior down to about 140 K [I]. Films of 304SS deposited by high rate magnetron sputtering grow as metastable BCC due to rapid vapor quenching achieved in the sputter process These f h show ferromagnetic behavior with a saturation magnetization of I30 emdg and coercive field of 50 Oe [2-41. We have studied magnetic properties of as-deposited Cu-304SS multilayer films grown by magnetron sputtering as a function of multilayer period. We demonstrate hy magnetization measurement and Mossbauer spectroscopy that by varying the period one may achieve the growth of metastable ferromagnetic BCC phase or stable nonmagnetic FCC phase, The mixture of these two is also possible, which is characterized by weak ferromagnetic behavior.","PeriodicalId":425017,"journal":{"name":"IEEE International Magnetics Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123715883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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