Pub Date : 2023-12-02DOI: 10.26565/2312-4334-2023-4-24
M. Kukurudziak, Volodymyr M. Lipka
The paper investigates the influence of the electrophysical characteristics of silicon on the final parameters of photoelectronic elements using p-i-n photodiodes as an example. It has been found that photodiode samples made on the basis of silicon with a higher resistivity are more prone to the formation of inversion channels at the oxide-semiconductor interface. Also, the dark current and responsivity of such photodiodes reach saturation at a lower voltage. It has also been shown that silicon-based photodiodes with a longer lifetime of non-basic charge carriers have lower dark current values. It has been shown that products with crystallographic orientation [111] have a much lower density of surface dislocations after technological operations than in the case of silicon with orientation [100]. It was also found that materials with different crystallographic orientations have different phosphorus diffusion coefficients. It has been experimentally established that a silicon oxide film grows faster on the surface of crystallographic orientation silicon [111] than on the surface of crystallographic orientation silicon [100]. This is due to the difference in the surface density of silicon atoms inherent in different crystallographic planes.
{"title":"Influence of silicon characteristics on the parameters of manufactured photonics cells","authors":"M. Kukurudziak, Volodymyr M. Lipka","doi":"10.26565/2312-4334-2023-4-24","DOIUrl":"https://doi.org/10.26565/2312-4334-2023-4-24","url":null,"abstract":"The paper investigates the influence of the electrophysical characteristics of silicon on the final parameters of photoelectronic elements using p-i-n photodiodes as an example. It has been found that photodiode samples made on the basis of silicon with a higher resistivity are more prone to the formation of inversion channels at the oxide-semiconductor interface. Also, the dark current and responsivity of such photodiodes reach saturation at a lower voltage. It has also been shown that silicon-based photodiodes with a longer lifetime of non-basic charge carriers have lower dark current values. It has been shown that products with crystallographic orientation [111] have a much lower density of surface dislocations after technological operations than in the case of silicon with orientation [100]. It was also found that materials with different crystallographic orientations have different phosphorus diffusion coefficients. It has been experimentally established that a silicon oxide film grows faster on the surface of crystallographic orientation silicon [111] than on the surface of crystallographic orientation silicon [100]. This is due to the difference in the surface density of silicon atoms inherent in different crystallographic planes.","PeriodicalId":42569,"journal":{"name":"East European Journal of Physics","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139187455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-02DOI: 10.26565/2312-4334-2023-4-36
R. Chandra, Sekhar Reddy, G. Ramasekhar
The advancement of aircraft technology has presented manufacturers with new criteria and problems for the functioning of their devices. It is essential that, in order to guarantee the secure operation of aerospace machinery, the failure mechanisms be identified and the operational durability of critical structural components be improved as quickly as possible. New aviation materials have been developed in modern years. In an aviation engine, engine oil lubricates, cools, washes, maintains against rust, decreases sound, and accelerates. Most important is lubrication. All mechanical components would burn out if not maintained. The aim of this work is to minimize costs by extending the operational life of aircraft components (mechanical and motor parts) and enhancing fuel mileage and flying distance. Based on the importance of the inspiration on magnetohydrodynamic Aluminum Oxide-Cobalt hybrid nanofluid flow over a stretching surface (SS) in the existence of porous medium, and thermal radiation are investigated. In this model we used Engine oil mixed with Aluminum Oxide and Cobalt nanoparticles. By using the suitable self-similarity variables, the PDE is transformed into ODEs. After then, the dimensionless equations are solved by using the Maple built in BVP Midrich scheme. Graphs and tables explain how the operational factors affect fluid flow efficiency. Compared to nanofluids, hybrid nanofluids have a better heat transfer rate.
飞机技术的进步为制造商提出了新的设备运行标准和问题。为了保证航空航天设备的安全运行，必须尽快找出故障机理，提高关键结构部件的运行耐久性。近年来，新型航空材料不断发展。在航空发动机中，机油具有润滑、冷却、清洗、防锈、降噪和加速的作用。最重要的是润滑。如果不加以维护，所有机械部件都会烧毁。这项工作的目的是通过延长飞机部件（机械和发动机零件）的使用寿命，提高燃油里程和飞行距离，从而最大限度地降低成本。基于对存在多孔介质的拉伸表面（SS）上的氧化铝-钴混合纳米流体的磁流体动力学的重要启发，以及对热辐射的研究。在该模型中，我们使用了混合有氧化铝和钴纳米颗粒的机油。通过使用合适的自相似变量，将 PDE 转化为 ODE。然后，使用 Maple 内置的 BVP Midrich 方案求解无量纲方程。图表说明了操作因素对流体流动效率的影响。与纳米流体相比，混合纳米流体具有更好的传热率。
{"title":"Enhanced Heat Transfer Analysis on MHD Hybrid Nanofluid Flow Over a Porous Stretching Surface: An Application to Aerospace Features","authors":"R. Chandra, Sekhar Reddy, G. Ramasekhar","doi":"10.26565/2312-4334-2023-4-36","DOIUrl":"https://doi.org/10.26565/2312-4334-2023-4-36","url":null,"abstract":"The advancement of aircraft technology has presented manufacturers with new criteria and problems for the functioning of their devices. It is essential that, in order to guarantee the secure operation of aerospace machinery, the failure mechanisms be identified and the operational durability of critical structural components be improved as quickly as possible. New aviation materials have been developed in modern years. In an aviation engine, engine oil lubricates, cools, washes, maintains against rust, decreases sound, and accelerates. Most important is lubrication. All mechanical components would burn out if not maintained. The aim of this work is to minimize costs by extending the operational life of aircraft components (mechanical and motor parts) and enhancing fuel mileage and flying distance. Based on the importance of the inspiration on magnetohydrodynamic Aluminum Oxide-Cobalt hybrid nanofluid flow over a stretching surface (SS) in the existence of porous medium, and thermal radiation are investigated. In this model we used Engine oil mixed with Aluminum Oxide and Cobalt nanoparticles. By using the suitable self-similarity variables, the PDE is transformed into ODEs. After then, the dimensionless equations are solved by using the Maple built in BVP Midrich scheme. Graphs and tables explain how the operational factors affect fluid flow efficiency. Compared to nanofluids, hybrid nanofluids have a better heat transfer rate.","PeriodicalId":42569,"journal":{"name":"East European Journal of Physics","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139187477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-02DOI: 10.26565/2312-4334-2023-4-49
Zozan Y. Mohammed, Sarkawt A. Sami, J. M. Salih
The purpose of this Erratum is to correct a misprint presented in the original article.
本勘误的目的是纠正原文中的一处错别字。
{"title":"Erratum: First-Principles Calculation of Structural, Electronic, and Optical Properties of Cubic Perovskite CsPbF3 [East European Journal Of Physics. 3. 263-270 (2023)]","authors":"Zozan Y. Mohammed, Sarkawt A. Sami, J. M. Salih","doi":"10.26565/2312-4334-2023-4-49","DOIUrl":"https://doi.org/10.26565/2312-4334-2023-4-49","url":null,"abstract":"The purpose of this Erratum is to correct a misprint presented in the original article.","PeriodicalId":42569,"journal":{"name":"East European Journal of Physics","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139187489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-02DOI: 10.26565/2312-4334-2023-4-47
Kolawole M. Lawal, E. Inyang, Efiong A. Ibanga, Funmilayo Ayedun
The current work deals with indoor radon (222Rn) concentrations measurements in the Calabar Study Centre of the National Open University of Nigeria using a Corentium Arthings digital radon detector meter for seven days representing a short–term average measurement of indoor radon gas concentration level. The geographical coordinates were recorded using a hand-held geographical positioning system for the sample point. Measurement were taken for seven days and the following data where obtained 83±2.19 Bq/m3,80±3.69 Bq/m3,86±5.57 Bq/m3,84±1.59 Bq/m3,82±3.59 Bq/m3,81±4.89 Bq/m3 and 85 ±5.59 Bq/m3.The average radon(222Rn) concentration level was found to be 83 ± 3.87 Bq/m3 with a geometric mean of 82 ± 3.54 Bq/m3. It was observed that the radon concentration was below the reference level of 100 Bq/m3 recommended by the World Health Organization (WHO). Although the current exposure of members of the public to natural radiation is not critical, the situation could change abruptly when other activities commenced. The excess life time cancer risk calculated for 70 years, 60 years, 50 years, 40 years and 30 years were 1.72 × 10−3,1.65× 10−3,1.39× 10−3,1.44× 10−3 and 0.69× 10−3 respectively. The calculated values of the excess life time cancer risk are all higher than the set limit of 0.029 × 10−3 by International Commission on Radiological Protection. However, there are no observed cases of lung cancer epidemic in this Centre. Therefore, it is advised to use fans and effective ventilation techniques to reduce radon levels. Identifying the regions of the country where people are most at risk from radon exposure should be the main goal of any national radon policy.
{"title":"Assessment of Indoor Radon Gas Concentration in National Open University of Nigeria: A Case Study of Calabar Study Centre","authors":"Kolawole M. Lawal, E. Inyang, Efiong A. Ibanga, Funmilayo Ayedun","doi":"10.26565/2312-4334-2023-4-47","DOIUrl":"https://doi.org/10.26565/2312-4334-2023-4-47","url":null,"abstract":"The current work deals with indoor radon (222Rn) concentrations measurements in the Calabar Study Centre of the National Open University of Nigeria using a Corentium Arthings digital radon detector meter for seven days representing a short–term average measurement of indoor radon gas concentration level. The geographical coordinates were recorded using a hand-held geographical positioning system for the sample point. Measurement were taken for seven days and the following data where obtained 83±2.19 Bq/m3,80±3.69 Bq/m3,86±5.57 Bq/m3,84±1.59 Bq/m3,82±3.59 Bq/m3,81±4.89 Bq/m3 and 85 ±5.59 Bq/m3.The average radon(222Rn) concentration level was found to be 83 ± 3.87 Bq/m3 with a geometric mean of 82 ± 3.54 Bq/m3. It was observed that the radon concentration was below the reference level of 100 Bq/m3 recommended by the World Health Organization (WHO). Although the current exposure of members of the public to natural radiation is not critical, the situation could change abruptly when other activities commenced. The excess life time cancer risk calculated for 70 years, 60 years, 50 years, 40 years and 30 years were 1.72 × 10−3,1.65× 10−3,1.39× 10−3,1.44× 10−3 and 0.69× 10−3 respectively. The calculated values of the excess life time cancer risk are all higher than the set limit of 0.029 × 10−3 by International Commission on Radiological Protection. However, there are no observed cases of lung cancer epidemic in this Centre. Therefore, it is advised to use fans and effective ventilation techniques to reduce radon levels. Identifying the regions of the country where people are most at risk from radon exposure should be the main goal of any national radon policy.","PeriodicalId":42569,"journal":{"name":"East European Journal of Physics","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139187526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-02DOI: 10.26565/2312-4334-2023-4-23
Khodjakbar S. Daliev, Sharifa B. Utamuradova, Zavkiddin E. Bahronkulov, Alisher Kh. Khaitbaev, Jonibek J. Hamdamov
In this work, lutetium-doped silicon samples were studied using the Raman scattering method. Registration and identification of both crystalline and amorphous phase components in the samples was carried out. There is some violation in the spectra of Raman scattering of light samples of silicon doped with lutetium in comparison with the original sample. It was found that the intensity of Raman scattering of doped samples is 2-3 times higher than the scattering from silicon. The comparison is carried out for the intensities associated with the intensities of the single-phonon line of the silicon substrate. This effect of the Raman spectra in the range 930 cm‑1 – 1030 cm–1 appearing in this range is similar to the data reduction for multiphonon propagation on silicon. For the obtained images (n-Si and p-Si), the bands in the atomic range of combinatorial scattering have a mixed broad and oval background in the range from 623 cm-1 to 1400 cm-1. This background can change the shape of the observed bands.
{"title":"Structure Determination and Defect Analysis n-Si, p-Si Raman Spectrometer Methods","authors":"Khodjakbar S. Daliev, Sharifa B. Utamuradova, Zavkiddin E. Bahronkulov, Alisher Kh. Khaitbaev, Jonibek J. Hamdamov","doi":"10.26565/2312-4334-2023-4-23","DOIUrl":"https://doi.org/10.26565/2312-4334-2023-4-23","url":null,"abstract":"In this work, lutetium-doped silicon samples were studied using the Raman scattering method. Registration and identification of both crystalline and amorphous phase components in the samples was carried out. There is some violation in the spectra of Raman scattering of light samples of silicon doped with lutetium in comparison with the original sample. It was found that the intensity of Raman scattering of doped samples is 2-3 times higher than the scattering from silicon. The comparison is carried out for the intensities associated with the intensities of the single-phonon line of the silicon substrate. This effect of the Raman spectra in the range 930 cm‑1 – 1030 cm–1 appearing in this range is similar to the data reduction for multiphonon propagation on silicon. For the obtained images (n-Si and p-Si), the bands in the atomic range of combinatorial scattering have a mixed broad and oval background in the range from 623 cm-1 to 1400 cm-1. This background can change the shape of the observed bands.","PeriodicalId":42569,"journal":{"name":"East European Journal of Physics","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139187528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-02DOI: 10.26565/2312-4334-2023-4-19
D. Esbergenov, E. M. Naurzalieva, Sabirbay A. Tursinbaev
This research paper presents the findings of an investigation into the interaction between zinc (Zn) and nickel (Ni) impurity atoms within a silicon (Si) matrix, which were doped sequentially in various combinations. The characterization techniques employed for this study encompass X-ray diffraction and IR-Fourier spectrometry. It is noteworthy that the degree of crystallinity exhibited by the silicon lattice, subject to the introduction of Zn and Ni impurities, is contingent upon the methodology employed for impurity incorporation. The results of this study reveal a distinctive trend in the optical properties of these doped silicon samples. Specifically, upon the introduction of Zn atoms into silicon that was pre-doped with Ni (Si), there is a concomitant reduction in the concentration of optically active oxygen atoms. Remarkably, this alteration in the dopant composition leads to a marked enhancement in the transparency of the silicon crystal. In stark contrast, when the doping sequence is reversed (Si Ni>), an opposing effect is observed, resulting in a diminishment of crystal transparency. These findings underscore the intricate interplay between the introduced impurity atoms, the dopant sequence, and their collective impact on the optical properties of the silicon matrix. Such insights contribute to our comprehension of the nuanced behavior of doped silicon and have implications for applications requiring tailored optical characteristics in semiconductor materials.
本研究论文介绍了对硅（Si）基体中锌（Zn）和镍（Ni）杂质原子之间相互作用的研究结果。本研究采用的表征技术包括 X 射线衍射和红外-傅立叶光谱法。值得注意的是，硅晶格在引入锌和镍杂质后的结晶度取决于杂质掺入所采用的方法。本研究的结果揭示了这些掺杂硅样品光学特性的独特趋势。具体来说，在预先掺入 Ni（Si）的硅中引入 Zn 原子后，光学活性氧原子的浓度随之降低。值得注意的是，掺杂剂成分的这种变化导致硅晶体的透明度明显提高。与此形成鲜明对比的是，当掺杂顺序相反（硅镍>）时，则会产生相反的效果，导致晶体透明度降低。这些发现强调了引入的杂质原子、掺杂序列及其对硅基体光学特性的集体影响之间错综复杂的相互作用。这些见解有助于我们理解掺杂硅的细微行为，并对需要定制光学特性的半导体材料应用产生影响。
{"title":"Enhancing the Perfection of a Silicon Crystal Doped with Nickel and Zinc Impurities","authors":"D. Esbergenov, E. M. Naurzalieva, Sabirbay A. Tursinbaev","doi":"10.26565/2312-4334-2023-4-19","DOIUrl":"https://doi.org/10.26565/2312-4334-2023-4-19","url":null,"abstract":"This research paper presents the findings of an investigation into the interaction between zinc (Zn) and nickel (Ni) impurity atoms within a silicon (Si) matrix, which were doped sequentially in various combinations. The characterization techniques employed for this study encompass X-ray diffraction and IR-Fourier spectrometry. It is noteworthy that the degree of crystallinity exhibited by the silicon lattice, subject to the introduction of Zn and Ni impurities, is contingent upon the methodology employed for impurity incorporation. The results of this study reveal a distinctive trend in the optical properties of these doped silicon samples. Specifically, upon the introduction of Zn atoms into silicon that was pre-doped with Ni (Si), there is a concomitant reduction in the concentration of optically active oxygen atoms. Remarkably, this alteration in the dopant composition leads to a marked enhancement in the transparency of the silicon crystal. In stark contrast, when the doping sequence is reversed (Si Ni>), an opposing effect is observed, resulting in a diminishment of crystal transparency. These findings underscore the intricate interplay between the introduced impurity atoms, the dopant sequence, and their collective impact on the optical properties of the silicon matrix. Such insights contribute to our comprehension of the nuanced behavior of doped silicon and have implications for applications requiring tailored optical characteristics in semiconductor materials.","PeriodicalId":42569,"journal":{"name":"East European Journal of Physics","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139187594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-02DOI: 10.26565/2312-4334-2023-4-25
S. Daliev, F. A. Saparov
Capacitance spectroscopy was used to study the capacitive-voltage characteristics of multilayer structures with a Si-SiO2 transition layer in Al-SiO2-n-Si type samples fabricated by the thermal oxidation of a semiconductor. It is shown that the inhomogeneous distribution of the density of surface states is a localized electroactive center at the very semiconductor-dielectric interface, due to over-barrier charge emission or thermal ionization of impurity centers.
{"title":"On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures","authors":"S. Daliev, F. A. Saparov","doi":"10.26565/2312-4334-2023-4-25","DOIUrl":"https://doi.org/10.26565/2312-4334-2023-4-25","url":null,"abstract":"Capacitance spectroscopy was used to study the capacitive-voltage characteristics of multilayer structures with a Si-SiO2 transition layer in Al-SiO2-n-Si type samples fabricated by the thermal oxidation of a semiconductor. It is shown that the inhomogeneous distribution of the density of surface states is a localized electroactive center at the very semiconductor-dielectric interface, due to over-barrier charge emission or thermal ionization of impurity centers.","PeriodicalId":42569,"journal":{"name":"East European Journal of Physics","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139187612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-02DOI: 10.26565/2312-4334-2023-4-39
Sharifa B. Utamuradova, K. Daliev, S. Daliev, Uktam K. Erugliev
The effect of thermal treatment on the behavior of samarium atoms introduced into silicon during the growth process was studied using the method of transient capacitive deep-level spectroscopy (DLTS). It has been shown that various high-temperature treatments lead to the activation of samarium atoms in the bulk of n-Si and the formation of deep levels. The energy spectrum of deep levels arising during heat treatments has been determined. The dependence of the efficiency of formation of these levels in n‑Si on the processing temperature has been studied. It was found that the higher the content of samarium atoms in the bulk of silicon at the same high-temperature treatment temperature, the higher the concentration of the deep level EC–0.39 eV. From this, we can conclude that the EC–0.39 eV level is associated with the activation of samarium atoms in the n-Si volume.
利用瞬态电容深电平光谱法（DLTS）研究了热处理对硅生长过程中引入的钐原子行为的影响。研究表明，各种高温处理会导致正硅中的钐原子活化并形成深电平。热处理过程中产生的深层能谱已经确定。研究了在正硅中形成这些电平的效率与处理温度的关系。研究发现，在相同的高温处理温度下，硅体中钐原子的含量越高，深电平 EC-0.39 eV 的浓度就越高。由此我们可以得出结论，EC-0.39 eV 电平与正硅体积中钐原子的活化有关。
{"title":"Capacitive Spectroscopy of Deep Levels in Silicon with Samarium Impurity","authors":"Sharifa B. Utamuradova, K. Daliev, S. Daliev, Uktam K. Erugliev","doi":"10.26565/2312-4334-2023-4-39","DOIUrl":"https://doi.org/10.26565/2312-4334-2023-4-39","url":null,"abstract":"The effect of thermal treatment on the behavior of samarium atoms introduced into silicon during the growth process was studied using the method of transient capacitive deep-level spectroscopy (DLTS). It has been shown that various high-temperature treatments lead to the activation of samarium atoms in the bulk of n-Si and the formation of deep levels. The energy spectrum of deep levels arising during heat treatments has been determined. The dependence of the efficiency of formation of these levels in n‑Si on the processing temperature has been studied. It was found that the higher the content of samarium atoms in the bulk of silicon at the same high-temperature treatment temperature, the higher the concentration of the deep level EC–0.39 eV. From this, we can conclude that the EC–0.39 eV level is associated with the activation of samarium atoms in the n-Si volume.","PeriodicalId":42569,"journal":{"name":"East European Journal of Physics","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139187650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-02DOI: 10.26565/2312-4334-2023-4-48
B. K. Shukla, R. K. Tiwari, D. Sofuoğlu, A. Beesham
Available observational data regarding current cosmological characteristics suggest that the universe is, to a large extent, both isotropic and homogeneous on a large scale. In this study, our objective is to analyze the Friedmann-Lemaitre-Robertson-Walker (FLRW) space-time using a perfect fluid distribution. We specifically investigate the framework of f(R, Lm) gravity within certain constraints. To accomplish this, we concentrate on a specific nonlinear f(R, Lm) model, represented by f(R, Lm) = R/2 + Lαm. The field equations are solved using the equation of state parameter of the form of the Chevallier-Polarski-Linder (CPL) parameterization. The deceleration parameter study finds an accelerating universe at late times. The transition redshift is found to be ztr = 0.89 ± 0.25. Also, we discussed the physical and geometrical properties of the model.
{"title":"FLRW Universe in f(R,Lm) Gravity with Equation of State Parameter","authors":"B. K. Shukla, R. K. Tiwari, D. Sofuoğlu, A. Beesham","doi":"10.26565/2312-4334-2023-4-48","DOIUrl":"https://doi.org/10.26565/2312-4334-2023-4-48","url":null,"abstract":"Available observational data regarding current cosmological characteristics suggest that the universe is, to a large extent, both isotropic and homogeneous on a large scale. In this study, our objective is to analyze the Friedmann-Lemaitre-Robertson-Walker (FLRW) space-time using a perfect fluid distribution. We specifically investigate the framework of f(R, Lm) gravity within certain constraints. To accomplish this, we concentrate on a specific nonlinear f(R, Lm) model, represented by f(R, Lm) = R/2 + Lαm. The field equations are solved using the equation of state parameter of the form of the Chevallier-Polarski-Linder (CPL) parameterization. The deceleration parameter study finds an accelerating universe at late times. The transition redshift is found to be ztr = 0.89 ± 0.25. Also, we discussed the physical and geometrical properties of the model.","PeriodicalId":42569,"journal":{"name":"East European Journal of Physics","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139187659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents a comprehensive simulation study on the influence of a triple absorber layer configuration in a perovskite-based solar cell using the SCAPS-1D software, under AM1.5 illumination. The simulated structure comprises a Cesium Tin-Germanium Triiodide (CsSn0.5Ge0.5I3) absorber layer sandwiched between Indium gallium zinc oxide (IGZO) and Cu2O layers. The main objective of this study is to enhance the power conversion efficiency (PCE) by optimizing the thicknesses of each layer. To validate our simulation results, we compare them with experimental data obtained from existing literature, and we observe a satisfactory agreement between the two. Our findings reveal that the maximum PCE of 28% can be achieved by utilizing specific thickness values for each layer. Specifically, the optimal thicknesses are determined to be 20 nm for the IGZO layer, 200 nm for the Cu2O layer, and 700 nm for the perovskite layer. These optimized thickness values lead to a significant improvement in the PCE of the solar cell, reaching 29%. This achievement highlights the effectiveness of our proposed triple absorber layer configuration and demonstrates its potential to enhance the overall performance of the perovskite-based solar cell. Overall, this study provides valuable insights into the optimization of the absorber layer configuration in perovskite solar cells, leading to improved power conversion efficiency.
{"title":"Design and Simulation of a Triple Absorber Layer Perovskite Solar Cell for High Conversion Efficiency","authors":"Abderrahim Yousfi, Okba Saidani, Z. Messai, Rafik Zouache, Mohamed Meddah, Younes Belgoumri","doi":"10.26565/2312-4334-2023-4-14","DOIUrl":"https://doi.org/10.26565/2312-4334-2023-4-14","url":null,"abstract":"This paper presents a comprehensive simulation study on the influence of a triple absorber layer configuration in a perovskite-based solar cell using the SCAPS-1D software, under AM1.5 illumination. The simulated structure comprises a Cesium Tin-Germanium Triiodide (CsSn0.5Ge0.5I3) absorber layer sandwiched between Indium gallium zinc oxide (IGZO) and Cu2O layers. The main objective of this study is to enhance the power conversion efficiency (PCE) by optimizing the thicknesses of each layer. To validate our simulation results, we compare them with experimental data obtained from existing literature, and we observe a satisfactory agreement between the two. Our findings reveal that the maximum PCE of 28% can be achieved by utilizing specific thickness values for each layer. Specifically, the optimal thicknesses are determined to be 20 nm for the IGZO layer, 200 nm for the Cu2O layer, and 700 nm for the perovskite layer. These optimized thickness values lead to a significant improvement in the PCE of the solar cell, reaching 29%. This achievement highlights the effectiveness of our proposed triple absorber layer configuration and demonstrates its potential to enhance the overall performance of the perovskite-based solar cell. Overall, this study provides valuable insights into the optimization of the absorber layer configuration in perovskite solar cells, leading to improved power conversion efficiency.","PeriodicalId":42569,"journal":{"name":"East European Journal of Physics","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139187663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：