Linxiao Zhu, A. Raman, K. X. Wang, M. A. Anoma, S. Fan
Standard solar cells heat up under sunlight, and the resulting increased temperature of the solar cell has adverse consequences on both its efficiency and its reliability. We introduce a general approach to radiatively lower the operating temperature of a solar cell through sky access, while maintaining its sunlight absorption. We present first an ideal scheme for the radiative cooling of solar cells. For an example case of a bare crystalline silicon solar cell, we show that the ideal scheme can passively lower the operating temperature by 18.3 K. We then show a microphotonic design based on realistic material properties, that approaches the performance of the ideal scheme. We also show that the radiative cooling effect is substantial, even in the presence of significant non-radiative heat change, and parasitic solar absorption in the cooling layer, provided that we design the cooling layer to be sufficiently thin.
{"title":"Radiative cooling for solar cells","authors":"Linxiao Zhu, A. Raman, K. X. Wang, M. A. Anoma, S. Fan","doi":"10.1117/12.2080148","DOIUrl":"https://doi.org/10.1117/12.2080148","url":null,"abstract":"Standard solar cells heat up under sunlight, and the resulting increased temperature of the solar cell has adverse consequences on both its efficiency and its reliability. We introduce a general approach to radiatively lower the operating temperature of a solar cell through sky access, while maintaining its sunlight absorption. We present first an ideal scheme for the radiative cooling of solar cells. For an example case of a bare crystalline silicon solar cell, we show that the ideal scheme can passively lower the operating temperature by 18.3 K. We then show a microphotonic design based on realistic material properties, that approaches the performance of the ideal scheme. We also show that the radiative cooling effect is substantial, even in the presence of significant non-radiative heat change, and parasitic solar absorption in the cooling layer, provided that we design the cooling layer to be sufficiently thin.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124618332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Bouchon, P. Chevalier, S. Héron, F. Pardo, J. Pelouard, R. Haïdar
Focusing the light onto nanostructures thanks to spherical lenses is a first step to enhance the field, and is widely used in applications, in particular for enhancing non-linear effects like the second harmonic generation. Nonetheless, the electromagnetic response of such nanostructures, which have subwavelength patterns, to a focused beam can not be described by the simple ray tracing formalism. Here, we present a method to compute the response to a focused beam, based on the B-spline modal method. The simulation of a gaussian focused beam is obtained thanks to a truncated decomposition on plane waves computed on a single period, which limits the computation burden.
{"title":"Simulating the focusing of light onto 1D nanostructures with a B-spline modal method","authors":"P. Bouchon, P. Chevalier, S. Héron, F. Pardo, J. Pelouard, R. Haïdar","doi":"10.1117/12.2078342","DOIUrl":"https://doi.org/10.1117/12.2078342","url":null,"abstract":"Focusing the light onto nanostructures thanks to spherical lenses is a first step to enhance the field, and is widely used in applications, in particular for enhancing non-linear effects like the second harmonic generation. Nonetheless, the electromagnetic response of such nanostructures, which have subwavelength patterns, to a focused beam can not be described by the simple ray tracing formalism. Here, we present a method to compute the response to a focused beam, based on the B-spline modal method. The simulation of a gaussian focused beam is obtained thanks to a truncated decomposition on plane waves computed on a single period, which limits the computation burden.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"9357 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130345384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report a light-dispersing device comprised of two transmission gratings and a wave plate. The gratings split the light incident at the Bragg angle into two orthogonally polarized components. The wave plate, which is placed between the gratings, functions as a polarization converter for oblique illumination. Appropriate assembly of these optical parts results in efficient diffraction of the unpolarized light with high spectral resolution. Using coupled-wave theories and Mueller matrix analysis, we constructed a device with a grating period of 400 nm for the spectral range of 680 ± 50 nm. We verified the proposed polarization-independent light-dispersing concept from the evaluation of this device.
{"title":"Polarization-independent light-dispersing device based on diffractive optics","authors":"J. Amako, E. Fujii","doi":"10.1117/12.2074885","DOIUrl":"https://doi.org/10.1117/12.2074885","url":null,"abstract":"We report a light-dispersing device comprised of two transmission gratings and a wave plate. The gratings split the light incident at the Bragg angle into two orthogonally polarized components. The wave plate, which is placed between the gratings, functions as a polarization converter for oblique illumination. Appropriate assembly of these optical parts results in efficient diffraction of the unpolarized light with high spectral resolution. Using coupled-wave theories and Mueller matrix analysis, we constructed a device with a grating period of 400 nm for the spectral range of 680 ± 50 nm. We verified the proposed polarization-independent light-dispersing concept from the evaluation of this device.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126959880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Gerhard, A. Arndt, A. Quintilla, A. Rahimi‐Iman, U. Lemmer, M. Koch
Geminate recombination of photo-generated excitons represents a considerable loss mechanism in polymer solar cells. We apply time-resolved photoluminescence (TRPL) to study the radiative recombination which accompanies the process of charge generation. A streak camera is used, which is sensitive for both the photoluminescence (PL) from the initially excited singlet excitons and the weaker emission from charge transfer (CT) states. The latter are formed at internal interfaces when the polymer is blended with a fullerene acceptor. We draw a comparison between our results for two polymers, P3HT and PTB7, respectively, which were studied in blends with the fullerene derivative PCBM. In addition, pristine films were investigated, allowing for the identification of interfacial features in the blends. For both polymers, the PL of the singlet states was rapidly quenched in blends with PCBM. In P3HT, time constants of about 40 ps were recorded for the singlet exciton decay and related to exciton diffusion, whereas the PL of PTB7 was almost completely quenched within the first 3 ps. The decay rates of the emissive CT excitons were 2-3 orders of magnitude smaller than those of the singlet state. Yet, due to their slower dynamics (~ 500 ps), they could be separated from the superimposed singlet emission. The CT decay times in blends with P3HT exhibited no significant temperature dependence, indicating that thermally driven dissociation of emissive excitons is unlikely. For blends with PTB7, however, a faster decay of the CT emission was obtained at room temperature.
{"title":"Time-resolved spectroscopy of charge transfer phenomena in organic solar cells","authors":"M. Gerhard, A. Arndt, A. Quintilla, A. Rahimi‐Iman, U. Lemmer, M. Koch","doi":"10.1117/12.2076138","DOIUrl":"https://doi.org/10.1117/12.2076138","url":null,"abstract":"Geminate recombination of photo-generated excitons represents a considerable loss mechanism in polymer solar cells. We apply time-resolved photoluminescence (TRPL) to study the radiative recombination which accompanies the process of charge generation. A streak camera is used, which is sensitive for both the photoluminescence (PL) from the initially excited singlet excitons and the weaker emission from charge transfer (CT) states. The latter are formed at internal interfaces when the polymer is blended with a fullerene acceptor. We draw a comparison between our results for two polymers, P3HT and PTB7, respectively, which were studied in blends with the fullerene derivative PCBM. In addition, pristine films were investigated, allowing for the identification of interfacial features in the blends. For both polymers, the PL of the singlet states was rapidly quenched in blends with PCBM. In P3HT, time constants of about 40 ps were recorded for the singlet exciton decay and related to exciton diffusion, whereas the PL of PTB7 was almost completely quenched within the first 3 ps. The decay rates of the emissive CT excitons were 2-3 orders of magnitude smaller than those of the singlet state. Yet, due to their slower dynamics (~ 500 ps), they could be separated from the superimposed singlet emission. The CT decay times in blends with P3HT exhibited no significant temperature dependence, indicating that thermally driven dissociation of emissive excitons is unlikely. For blends with PTB7, however, a faster decay of the CT emission was obtained at room temperature.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123872623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Grollman, W. Shepherd, A. Robertson, Keshab Raj Paudel, J. Anthony, O. Ostroverkhova
We present photophysical properties of functionalized anthradithiophene (ADT) and pentacene (Pn) derivatives, as well as charge and energy transfer properties of donor-acceptor (D/A) pairs of these derivatives. All molecules studied were fluorescent and photostable enough to be imaged on the single-molecule level in a variety of polymeric and in a functionalized benzothiophene (BTBTB) crystalline host using room-temperature wide- field epifluorescence microscopy. Flexibility of functionalization of both guest (ADT, Pn) and host (BTBTB or polymer) molecules can be used for systematic studies of nanoscale morphology and photophysics of D/A organic semiconductor bulk heterojunctions, as well as in applications relying on FRET, using single-molecule fluorescence microscopy.
{"title":"Photophysics of organic semiconductors: from ensemble to the single-molecule level","authors":"R. Grollman, W. Shepherd, A. Robertson, Keshab Raj Paudel, J. Anthony, O. Ostroverkhova","doi":"10.1117/12.2079755","DOIUrl":"https://doi.org/10.1117/12.2079755","url":null,"abstract":"We present photophysical properties of functionalized anthradithiophene (ADT) and pentacene (Pn) derivatives, as well as charge and energy transfer properties of donor-acceptor (D/A) pairs of these derivatives. All molecules studied were fluorescent and photostable enough to be imaged on the single-molecule level in a variety of polymeric and in a functionalized benzothiophene (BTBTB) crystalline host using room-temperature wide- field epifluorescence microscopy. Flexibility of functionalization of both guest (ADT, Pn) and host (BTBTB or polymer) molecules can be used for systematic studies of nanoscale morphology and photophysics of D/A organic semiconductor bulk heterojunctions, as well as in applications relying on FRET, using single-molecule fluorescence microscopy.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"234 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123195376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Ki, Seon Hoon Kim, Doo-Gun Kim, Tae-Un Kim, Haeng-Yun Jung, Jae-Man Yoon
Dye-Sensitized solar cell (DSSC) is expected to be one of the next-generation photovoltaics because of its environment-friendly and low-cost properties. However, commercialization of DSSC is difficult because of the electrolyte leakage. We propose a new thermal curable base on silicon resin. The resin aimed at sealing of DSSC and gives a promising resolution for sealing of practical DSSC. Furthermore, the optimized resin was fabricated into solar cells, which exhibited best durability by retaining 97% of the initial photoelectric conversion efficiency after 1,000 hours tracking test at 80℃.
染料敏化太阳能电池(Dye-Sensitized solar cell, DSSC)具有环保、低成本的特点，有望成为下一代光伏电池之一。然而，由于电解液的泄漏，DSSC的商业化是困难的。提出了一种新型硅树脂热固化基材。该树脂以DSSC的密封为目的，为实际DSSC的密封提供了一种有希望的解决方案。将优化后的树脂制成太阳能电池，在80℃下进行1000小时跟踪测试后，树脂的光电转换效率仍保持97%，具有最佳的耐久性。
{"title":"The durability of the dye-sensitized solar cell with silicon resin","authors":"H. Ki, Seon Hoon Kim, Doo-Gun Kim, Tae-Un Kim, Haeng-Yun Jung, Jae-Man Yoon","doi":"10.1117/12.2080456","DOIUrl":"https://doi.org/10.1117/12.2080456","url":null,"abstract":"Dye-Sensitized solar cell (DSSC) is expected to be one of the next-generation photovoltaics because of its environment-friendly and low-cost properties. However, commercialization of DSSC is difficult because of the electrolyte leakage. We propose a new thermal curable base on silicon resin. The resin aimed at sealing of DSSC and gives a promising resolution for sealing of practical DSSC. Furthermore, the optimized resin was fabricated into solar cells, which exhibited best durability by retaining 97% of the initial photoelectric conversion efficiency after 1,000 hours tracking test at 80℃.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134258958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Sin, Z. Lingley, M. Peterson, M. Brodie, S. Moss, Tae Wan Kim, Honghyuk Kim, Y. Guan, K. Forghani, L. Mawst, T. Kuech
Among several approaches proposed to achieve high-efficiency III-V multi-junction solar cells, the most promising approach is to incorporate a bottom junction consisting of a 1 – 1.25 eV material. In particular, several research groups have studied MBE- and MOVPE-grown 1 – 1.25 eV bulk (In)GaAsN(Sb) dilute nitride lattice matched to GaAs substrates, but it is a challenge to grow dilute nitrides without introducing a number of localized states or defects. Localized states originating from random distributions of nitrogen sites in dilute nitrides behave as highly efficient traps, leading to short minority carrier lifetimes. As our group previously reported, carrier dynamics studies are indispensable in the optimization of dilute nitride materials growth to achieve improved solar cell performance. Also, bismide QW heterostructures have recently received a great deal of attention for applications in solar cells and semiconductor lasers because theoretical studies have predicted reduction in nonradiative recombination in Bicontaining materials. For the present study, we employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in MOVPE-grown bulk (In)GaAsN(Sb) materials nominally lattice matched to GaAs substrates. Compared to our previous samples, our present samples grown using different metalorganic precursors at higher growth temperatures showed a significantly less background C doping density. Carrier lifetimes were measured from such dilute nitride samples with low C doping density at various temperatures between 10K and RT. We also performed preliminary TR-PL measurements on MOVPE-grown bismide QW heterostructures at low temperatures. Carrier lifetimes were measured from as-grown and annealed bismide QW structures consisting of GaAsBi(P) wells and GaAsP barriers. Lastly, TEM cross sections were prepared from both dilute nitride and bismide samples for defect and composition analysis using a high resolution TEM.
{"title":"Time-resolved PL and TEM studies of MOVPE-grown bulk dilute nitride and bismide quantum well heterostructure","authors":"Y. Sin, Z. Lingley, M. Peterson, M. Brodie, S. Moss, Tae Wan Kim, Honghyuk Kim, Y. Guan, K. Forghani, L. Mawst, T. Kuech","doi":"10.1117/12.2076785","DOIUrl":"https://doi.org/10.1117/12.2076785","url":null,"abstract":"Among several approaches proposed to achieve high-efficiency III-V multi-junction solar cells, the most promising approach is to incorporate a bottom junction consisting of a 1 – 1.25 eV material. In particular, several research groups have studied MBE- and MOVPE-grown 1 – 1.25 eV bulk (In)GaAsN(Sb) dilute nitride lattice matched to GaAs substrates, but it is a challenge to grow dilute nitrides without introducing a number of localized states or defects. Localized states originating from random distributions of nitrogen sites in dilute nitrides behave as highly efficient traps, leading to short minority carrier lifetimes. As our group previously reported, carrier dynamics studies are indispensable in the optimization of dilute nitride materials growth to achieve improved solar cell performance. Also, bismide QW heterostructures have recently received a great deal of attention for applications in solar cells and semiconductor lasers because theoretical studies have predicted reduction in nonradiative recombination in Bicontaining materials. For the present study, we employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in MOVPE-grown bulk (In)GaAsN(Sb) materials nominally lattice matched to GaAs substrates. Compared to our previous samples, our present samples grown using different metalorganic precursors at higher growth temperatures showed a significantly less background C doping density. Carrier lifetimes were measured from such dilute nitride samples with low C doping density at various temperatures between 10K and RT. We also performed preliminary TR-PL measurements on MOVPE-grown bismide QW heterostructures at low temperatures. Carrier lifetimes were measured from as-grown and annealed bismide QW structures consisting of GaAsBi(P) wells and GaAsP barriers. Lastly, TEM cross sections were prepared from both dilute nitride and bismide samples for defect and composition analysis using a high resolution TEM.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131731115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Two multi-semiconductor-laser (SL) topologies, based on mutually coupled semiconductor lasers - representing a startype and a mesh-type network - are evaluated in terms of their synchrony potential and their sensitivity towards critical SLs' intrinsic and operational parameters. The coupling topology, the coupling conditions and the values of key SL parameters determine the type of dynamics of the emitted optical signals. The number of nodes and the detuning in their fundamental properties have been assessed to be decisive in terms of efficiency and quality of synchronized outputs, as wells as for the overall dynamical map of the network. Our investigation mainly focuses on discrepancies in SL parameter values and their effect on the efficiency of synchronized dynamics. This type of investigation will provide preliminary guidelines on building experimentally large scale networks of coupled SLs under various coupling matrices that could support optical sensing or cryptographic applications.
{"title":"Coupled semiconductor laser network topologies for efficient synchronization","authors":"M. Bourmpos, A. Argyris, D. Syvridis","doi":"10.1117/12.2078272","DOIUrl":"https://doi.org/10.1117/12.2078272","url":null,"abstract":"Two multi-semiconductor-laser (SL) topologies, based on mutually coupled semiconductor lasers - representing a startype and a mesh-type network - are evaluated in terms of their synchrony potential and their sensitivity towards critical SLs' intrinsic and operational parameters. The coupling topology, the coupling conditions and the values of key SL parameters determine the type of dynamics of the emitted optical signals. The number of nodes and the detuning in their fundamental properties have been assessed to be decisive in terms of efficiency and quality of synchronized outputs, as wells as for the overall dynamical map of the network. Our investigation mainly focuses on discrepancies in SL parameter values and their effect on the efficiency of synchronized dynamics. This type of investigation will provide preliminary guidelines on building experimentally large scale networks of coupled SLs under various coupling matrices that could support optical sensing or cryptographic applications.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133794430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Dye-sensitized solar cells (DSSCs) via ZnO/TiO2 nanocomposite photoanode with density-controlled abilities are presented in this paper. This nanocomposite photoanode is composed of TiO2 nanoparticles dispersed into densitycontrolled vertically aligned ZnO-TiO2 core-shell nanorod arrays. The density-controlled ZnO-TiO2 core-shell nanorod arrays were synthesized directly onto fluorine-doped tin oxide (FTO) substrates using an innovative two-step wet chemical route. First, the density-controlled ZnO nanorod arrays were formed by applying a ZnO hydrothermal process from a TiO2 nanocrystals template. Second, the ZnO-TiO2 core-shell nanorod arrays were formed by depositing a TiO2 shell layer from a sol-gel process. The major advantages of a density-controlled ZnO/TiO2 nanocomposite photoanode include (1) providing a better diffusion path from ZnO nanorod arrays and (2) reducing the recombination loss by introducing an energy barrier layer TiO2 conformal shell coating. To validate the advantages of a density-controlled ZnO/TiO2 nanocomposite photoanode, DSSCs based on a ZnO/TiO2 nanocomposite photoanode were fabricated, in which N719 dye was used. The average dimensions of the ZnO nanorod arrays were 20 μm and 650 nm for the length and the diameter, respectively, while the designated spacing between each nanorod was around 5 μm. The performance of the solar cell was tested by using a standard AM 1.5 solar simulator from Newport Corporation. The experimental results confirmed that an open-circuit voltage, 0.93 V, was achieved, which was much higher than the conventional TiO2 nanoparticles thin film structure for the same thickness. Thus, density-controlled ZnO/TiO2 nanocomposite photoanodes could improve the performance of DSSCs by offering a better electron diffusion path.
{"title":"Density-controlled ZnO/TiO2 nanocomposite photoanode for improving dye-sensitized solar cells performance","authors":"Jimmy Yao, Chih-min Lin, S. Yin","doi":"10.1117/12.2085268","DOIUrl":"https://doi.org/10.1117/12.2085268","url":null,"abstract":"Dye-sensitized solar cells (DSSCs) via ZnO/TiO2 nanocomposite photoanode with density-controlled abilities are presented in this paper. This nanocomposite photoanode is composed of TiO2 nanoparticles dispersed into densitycontrolled vertically aligned ZnO-TiO2 core-shell nanorod arrays. The density-controlled ZnO-TiO2 core-shell nanorod arrays were synthesized directly onto fluorine-doped tin oxide (FTO) substrates using an innovative two-step wet chemical route. First, the density-controlled ZnO nanorod arrays were formed by applying a ZnO hydrothermal process from a TiO2 nanocrystals template. Second, the ZnO-TiO2 core-shell nanorod arrays were formed by depositing a TiO2 shell layer from a sol-gel process. The major advantages of a density-controlled ZnO/TiO2 nanocomposite photoanode include (1) providing a better diffusion path from ZnO nanorod arrays and (2) reducing the recombination loss by introducing an energy barrier layer TiO2 conformal shell coating. To validate the advantages of a density-controlled ZnO/TiO2 nanocomposite photoanode, DSSCs based on a ZnO/TiO2 nanocomposite photoanode were fabricated, in which N719 dye was used. The average dimensions of the ZnO nanorod arrays were 20 μm and 650 nm for the length and the diameter, respectively, while the designated spacing between each nanorod was around 5 μm. The performance of the solar cell was tested by using a standard AM 1.5 solar simulator from Newport Corporation. The experimental results confirmed that an open-circuit voltage, 0.93 V, was achieved, which was much higher than the conventional TiO2 nanoparticles thin film structure for the same thickness. Thus, density-controlled ZnO/TiO2 nanocomposite photoanodes could improve the performance of DSSCs by offering a better electron diffusion path.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"153 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116872122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Kelleher, D. Goulding, S. Slepneva, B. O'Shaughnessy, T. Butler, S. Hegarty, A. Vladimirov, G. Huyet
We analyse the dynamical behaviour of a Fourier domain mode locked laser experimentally and theoretically. Heterodyne measurements of laser dynamics allows some insight into the frequency behaviour of the laser which coupled with theoretical arguments from previous work allow for a clear interpretation of the observations. Direct simulations using a delay differential equation model in full FDML mode display excellent agreement with the experimental results.
{"title":"Phase and frequency dynamics of Fourier domain mode locked OCT lasers","authors":"B. Kelleher, D. Goulding, S. Slepneva, B. O'Shaughnessy, T. Butler, S. Hegarty, A. Vladimirov, G. Huyet","doi":"10.1117/12.2079152","DOIUrl":"https://doi.org/10.1117/12.2079152","url":null,"abstract":"We analyse the dynamical behaviour of a Fourier domain mode locked laser experimentally and theoretically. Heterodyne measurements of laser dynamics allows some insight into the frequency behaviour of the laser which coupled with theoretical arguments from previous work allow for a clear interpretation of the observations. Direct simulations using a delay differential equation model in full FDML mode display excellent agreement with the experimental results.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"416 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117311900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：