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1985 IEEE MTT-S International Microwave Symposium Digest最新文献

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Millimeter-Wave Diplexers with Printed Circuit Elements 带有印刷电路元件的毫米波双工器
Pub Date : 1985-06-04 DOI: 10.1109/MWSYM.1985.1132041
Y. Shih, L. Bui, T. Ltoh
A novel design of W-band (75-110 GHz) non-contiguous diplexers is described. The common port of the diplexer is fed by suspended probe transitions which are suitable for wide-band applications. The circuit is printed on a single substrate and easily assembled in a split-block housing. The insertion loss at the passbands is about 1 dB.
介绍了一种w波段(75- 110ghz)非连续双工器的新设计。双工器的公共端口由悬置探头过渡馈电,适用于宽带应用。该电路印刷在单一基板上,易于在分块外壳中组装。通带处的插入损耗约为1db。
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引用次数: 22
A 4.5 to 18 GHz Phase Shifter 4.5到18 GHz移相器
Pub Date : 1985-06-04 DOI: 10.1109/MWSYM.1985.1132051
D. Boire, J. Degenford, H. Cohn
This paper describes a wideband phase shifter suitable for hybrid and monolithic phased array modules. The phase shifter employs a 180° digital bit and one or two analog sections to obtain a full 360° phase shift range. The design of the phase shifter and experimental results are presented.
本文介绍了一种适用于混合和单片相控阵模块的宽带移相器。移相器采用180°数字位和一个或两个模拟部分来获得完整的360°相移范围。给出了移相器的设计和实验结果。
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引用次数: 30
Microwave Radiometric Detection of Thermal Asymmetry of Varicocele 精索静脉曲张热不对称性的微波辐射检测
Pub Date : 1985-06-04 DOI: 10.1109/MWSYM.1985.1131905
T. Felderman, J. Shaeffer, A.M. El-Mahdj, K. Carr, J. Stecker
Varicocele, a varicose enlargement of the veins in the spermatic cord, is found in 21-39% of men being evaluated for infertility. Thermometric detection of this condition was attempted by microwave radiometry as well as by contact thermometry using thermistor probes. The inguinal and scrotal regions of 44 male subjects and inguinal regions of 11 female subjects were studied. Substantially different thermal patterns were obtained by thermistors (surface temperature) and microwave radiometry (subsurface temperature). There was a correlation between left scrotal varicocele and a temperature elevation of the left spermatic cord using microwave radiometry. This thermal defect appeared to be corrected following surgery.
精索静脉曲张是精索静脉曲张扩大的一种,在21-39%的男性中被诊断为不孕症。用微波辐射测量法和热敏电阻探头接触测温法对这种情况进行了测温。研究了44例男性受试者的腹股沟和阴囊区域以及11例女性受试者的腹股沟区域。热敏电阻(表面温度)和微波辐射测量(地下温度)获得了截然不同的热模式。左阴囊精索静脉曲张与左精索温度升高有相关性。这种热缺陷似乎在手术后得到了纠正。
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引用次数: 1
A New Slotline-Microstrip Frequency Halver 一种新型槽线微带频率减半器
Pub Date : 1985-06-04 DOI: 10.1109/MWSYM.1985.1132074
G. Kalivas, R. Harrison
A novel frequency-halving structure employs a matched pair of varactors in a configuration composed of both slotline and microstrip transmission-line sections. A planar 4th-order Marchand balun simultaneously provides both output matching and a balance-to-unbalance transition.
一种新型的半频结构采用了一组匹配的变容管,该变容管由槽线和微带传输线组成。平面四阶马尔尚平衡同时提供输出匹配和平衡到不平衡的转换。
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引用次数: 7
Quasi-Optical Slot Ring Mixer Noise Figure Measurements 准光槽环混频器噪声图测量
Pub Date : 1985-06-04 DOI: 10.1109/MWSYM.1985.1132062
K. Stephan, G. Perks
Noise-figure measurements of an X-band slot-ring mixer using quasi-optical coupling of LO and RF energy are described. The mixer noise figure varies from 5.5 to 9 dB over the IF band, and extension of this design to millimeter wavelengths should be straight-forward.
描述了利用本LO和RF能量的准光学耦合测量x波段槽环混频器的噪声图。在中频波段,混频器噪声系数从5.5到9db不等,将这种设计扩展到毫米波波长应该是直接的。
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引用次数: 2
A W-Band Monolithic Balanced Mixer w波段单片平衡混频器
Pub Date : 1985-06-04 DOI: 10.1109/MWSYM.1985.1131915
L. Yuan, P. Asher
A fully monolithic balanced mixer fabricated on a GaAs substrate for operation at W-Band (75 to 110 GHz) is described. The overall size of the mixer chip is 0.075"x 0.075"x0.004". A minimum conversion loss of 4.6 dB has been measured at 91.1 GHz for narrow band operation. For broadband operation, a conversion loss of less than 8 dB has been achieved over an RF range of 73.6 to 83.6 GHz with a corresponding IF range of 8 to 18 GHz.
描述了一种基于GaAs衬底的全单片平衡混频器,用于w波段(75至110 GHz)的工作。混频器芯片的整体尺寸为0.075"x 0.075"x0.004"。在91.1 GHz窄带工作下,最小转换损耗为4.6 dB。对于宽带操作,在73.6至83.6 GHz的射频范围内实现了小于8 dB的转换损耗,相应的中频范围为8至18 GHz。
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引用次数: 15
Development of a Coupler in Finline Technique 鳍线技术中耦合器的研制
Pub Date : 1985-06-04 DOI: 10.1109/MWSYM.1985.1131922
A. Beyer, D. Kother, I. Wolff
Among other components directional couplers are employed in millimeterwave finline circuits. The method presented here allows a simple calculation of all modes which can exist on such couplers under consideration of the thickness of the metallization. In this way a 3-dB coupler has been developed for the Ka-band. Numerical and experimental results illustrate the applicability of this method.
定向耦合器是毫米波鳍线电路中常用的器件之一。本文提出的方法允许在考虑金属化厚度的情况下,对这种耦合器上可能存在的所有模式进行简单的计算。用这种方法,为ka波段开发了3db耦合器。数值和实验结果表明了该方法的适用性。
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引用次数: 6
36.0 - 40.0 GHz HEMT Low Noise Amplifier 36.0 - 40.0 GHz HEMT低噪声放大器
Pub Date : 1985-06-04 DOI: 10.1109/MWSYM.1985.1132037
M. Shelley, J. Berenz, A. Nichols, K. Nakano, R. Sawires, J. Abell
This paper describes the design and development of a multistage low noise High Electron Mobility Transistor (HEMT) amplifier that exhibits state-of-the-art performance over the frequency range of 36-40 GHz. The amplifier utilizes a series of three single ended stages that are each designed around TRW's HEMT device. Typical performance to date has been 15-17 dB gain with an associated noise figure of 4.0 to 4.6 dB.
本文介绍了一种多级低噪声高电子迁移率晶体管(HEMT)放大器的设计和开发,该放大器在36-40 GHz频率范围内具有最先进的性能。放大器采用了一系列的三个单端级,每个都是围绕TRW的HEMT设备设计的。到目前为止,典型的性能为15-17 dB增益,相关噪声系数为4.0至4.6 dB。
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引用次数: 11
Wide-Band Limiting Amplifiers with Low Second Harmonic Distortion, Utilizing GaAs MMIC Limiters 利用GaAs MMIC限制器的低二次谐波宽带限制放大器
Pub Date : 1985-06-04 DOI: 10.1109/MWSYM.1985.1131976
E. Crescenzi, R. Besser, B. A. Tucker, T. R. Kritzer
A 2-6 GHz microwave limiting amplifier has been constructed using alternating MMIC limiters and GaAs FET amplifier stages. The function of the limiters is to restrict signal levels such that the gain stages operate in a linear region. A multistage prototype amplifier maintained second harmonic levels at least 28 dB below the fundamental output, when driven 30 dB into saturation.
采用MMIC限幅器和GaAs场效应晶体管放大器级交替构成了2- 6ghz微波限幅放大器。限制器的作用是限制信号电平,使增益级在线性区域内工作。一个多级原型放大器,当驱动到30db饱和时,其二次谐波电平至少比基波输出低28db。
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引用次数: 6
A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers 用于功率放大器输出电路设计的非线性GaAs场效应管模型
Pub Date : 1985-06-04 DOI: 10.1109/MWSYM.1985.1131996
W. Curtice, M. Ettenberg
A nonlinear equivalent circuit model for the GaAs FET has been developed based upon the small-signal device model and separate current measurements, including drain-gate avalanche current data. The harmonic balance technique is used to develop the FET rf load-pull characteristics in an amplifier configuration under large signal operation. Computed and experimental load-pull results show good agreement.
基于小信号器件模型和单独的电流测量,包括漏极雪崩电流数据,建立了GaAs场效应管的非线性等效电路模型。利用谐波平衡技术,研究了大信号下放大器结构中场效应管的负载-拉特性。计算结果与实验结果吻合较好。
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引用次数: 424
期刊
1985 IEEE MTT-S International Microwave Symposium Digest
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