Pub Date : 1985-06-04DOI: 10.1109/MWSYM.1985.1131941
S. K. Chan, K. Lau, P. White
The mobility profiles of FET channels were measured on fabricated low noise and power GaAs MESFETs, using the recently developed magnetotransconductance technique. The results are used to study the correlation between the RF performance and the material parameter.
{"title":"The Relationship of Magnetotransconductance Mobility Profiles and RF Performance of GaAs FETs","authors":"S. K. Chan, K. Lau, P. White","doi":"10.1109/MWSYM.1985.1131941","DOIUrl":"https://doi.org/10.1109/MWSYM.1985.1131941","url":null,"abstract":"The mobility profiles of FET channels were measured on fabricated low noise and power GaAs MESFETs, using the recently developed magnetotransconductance technique. The results are used to study the correlation between the RF performance and the material parameter.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133992603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-04DOI: 10.1109/MWSYM.1985.1131938
K. Fricke, H. Hartnagel
The results to be presented are obtained by an experimental investigation of the wave properties on FET structures using especially fabricated MESFETs. The use of this information for an optimization of MESFET structures and for a development of new devices is discussed. It will be demonstrated that a significant improvement of the FET gain is obtainable.
{"title":"GaAs MESFET Optimization and New Device Applications Based on Wave Property Studies","authors":"K. Fricke, H. Hartnagel","doi":"10.1109/MWSYM.1985.1131938","DOIUrl":"https://doi.org/10.1109/MWSYM.1985.1131938","url":null,"abstract":"The results to be presented are obtained by an experimental investigation of the wave properties on FET structures using especially fabricated MESFETs. The use of this information for an optimization of MESFET structures and for a development of new devices is discussed. It will be demonstrated that a significant improvement of the FET gain is obtainable.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"384 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134323777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-04DOI: 10.1109/MWSYM.1985.1132023
M. Sasaki, T. Nunotani, T. Inoue, I. Yokoshima
A high-precision power meter with a self-calibration function in the short-millimeter wave region (94GHz) has been developed. As a result of self-calibration, a high effective efficiency (99.86 %) of the built-in thin-film barretter mount has been obtained, and a reliable measurement of millimeter wave power with an overall accuracy of +-1 % has become possible. [1], [2]
{"title":"Short Millimeter Wave Region High Meter with Self-Calibration Accuracy Power Function","authors":"M. Sasaki, T. Nunotani, T. Inoue, I. Yokoshima","doi":"10.1109/MWSYM.1985.1132023","DOIUrl":"https://doi.org/10.1109/MWSYM.1985.1132023","url":null,"abstract":"A high-precision power meter with a self-calibration function in the short-millimeter wave region (94GHz) has been developed. As a result of self-calibration, a high effective efficiency (99.86 %) of the built-in thin-film barretter mount has been obtained, and a reliable measurement of millimeter wave power with an overall accuracy of +-1 % has become possible. [1], [2]","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"513 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132591956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-04DOI: 10.1109/MWSYM.1985.1132084
S. Nightingale, M. Upton, N. V. Dandekar
A new theoretical approach has been developed to analyze and design a double balanced mixer using FETs. This approach also enables single ended and single balanced mixer designs to be analyzed. Theoretical and practical results will be presented for a wideband (6-18 GHz) double balanced mixer for EW applications.
{"title":"The Design and Performance of a Double Balanced Mixer Using FETs","authors":"S. Nightingale, M. Upton, N. V. Dandekar","doi":"10.1109/MWSYM.1985.1132084","DOIUrl":"https://doi.org/10.1109/MWSYM.1985.1132084","url":null,"abstract":"A new theoretical approach has been developed to analyze and design a double balanced mixer using FETs. This approach also enables single ended and single balanced mixer designs to be analyzed. Theoretical and practical results will be presented for a wideband (6-18 GHz) double balanced mixer for EW applications.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123761820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-04DOI: 10.1109/MWSYM.1985.1131975
T. Takagi, K. Seine, A. Iida, M. Kobiki, Y. Mitsui, F. Takeda
The clustered FET operating at Ka-band, in which four FET cells with 800 µm gate width are combined by the new 4-way monolithic combiner, has been developed. The amplifier using these clustered FETs has been demonstrated with more than 1 watt power output with 6 dB associated gain over 27.6 - 29.3 GHz.
{"title":"A 1 Watt 28 GHz Band Amplifier Using Clustered FETs","authors":"T. Takagi, K. Seine, A. Iida, M. Kobiki, Y. Mitsui, F. Takeda","doi":"10.1109/MWSYM.1985.1131975","DOIUrl":"https://doi.org/10.1109/MWSYM.1985.1131975","url":null,"abstract":"The clustered FET operating at Ka-band, in which four FET cells with 800 µm gate width are combined by the new 4-way monolithic combiner, has been developed. The amplifier using these clustered FETs has been demonstrated with more than 1 watt power output with 6 dB associated gain over 27.6 - 29.3 GHz.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122173067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-04DOI: 10.1109/MWSYM.1985.1132008
M. Abouzahra, K. Gupta
This paper presents a method for designing a five-port disc microstrip circuit suitable for the six-port network analyzers. The method is based on the planar circuit approach in which the two-dimensional Green's function of a circular segment is used. It is found that a bandwidth of about 44% can be obtained (for |S/sub 11/| less than 0.2).
{"title":"Analysis and Design of Five Port Circular Disc Structures for Six-Port Analyzers","authors":"M. Abouzahra, K. Gupta","doi":"10.1109/MWSYM.1985.1132008","DOIUrl":"https://doi.org/10.1109/MWSYM.1985.1132008","url":null,"abstract":"This paper presents a method for designing a five-port disc microstrip circuit suitable for the six-port network analyzers. The method is based on the planar circuit approach in which the two-dimensional Green's function of a circular segment is used. It is found that a bandwidth of about 44% can be obtained (for |S/sub 11/| less than 0.2).","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124059700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-04DOI: 10.1109/MWSYM.1985.1131990
C. C. Leung, C. Snapp, V. Grande
An interdigitated silicon bipolar transistor with 0.5 micrometer emitter width and 2 micrometer emitter-emitter pitch has been fabricated which has a measured Fmax greater than 30 GHz. Low phase noise YIG-tuned oscillators with fundamental frequency bands of 4-18 and 8-22 GHz have been demonstrated using this transistor.
{"title":"A 0.5 µm Silicon Bipolar Transistor for Low Phase Noise Oscillator Applications Up to 20 GHz","authors":"C. C. Leung, C. Snapp, V. Grande","doi":"10.1109/MWSYM.1985.1131990","DOIUrl":"https://doi.org/10.1109/MWSYM.1985.1131990","url":null,"abstract":"An interdigitated silicon bipolar transistor with 0.5 micrometer emitter width and 2 micrometer emitter-emitter pitch has been fabricated which has a measured Fmax greater than 30 GHz. Low phase noise YIG-tuned oscillators with fundamental frequency bands of 4-18 and 8-22 GHz have been demonstrated using this transistor.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121158467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-04DOI: 10.1109/MWSYM.1985.1131907
Y. Takahashi, Y. Nikawa, T. Katsumata, S. Mori, M. Nakagawa, M. Kikuchi
A new type applicator for microwave hyperthermia operated at 433 MHz is proposed. This applicator, which is a waveguide array type, has a convergent effect of the electromagnetic field radiated from the applicator, and focal length of can be changeable. The electric field distributions in the model of human tissues from the aperture of the applicator were measured, and the simulation of temperature distributions was performed in the model heated with the applicator.
{"title":"Direct Contact Applicator with Convergent Effect of EM Field for Microwave Hypertrermia","authors":"Y. Takahashi, Y. Nikawa, T. Katsumata, S. Mori, M. Nakagawa, M. Kikuchi","doi":"10.1109/MWSYM.1985.1131907","DOIUrl":"https://doi.org/10.1109/MWSYM.1985.1131907","url":null,"abstract":"A new type applicator for microwave hyperthermia operated at 433 MHz is proposed. This applicator, which is a waveguide array type, has a convergent effect of the electromagnetic field radiated from the applicator, and focal length of can be changeable. The electric field distributions in the model of human tissues from the aperture of the applicator were measured, and the simulation of temperature distributions was performed in the model heated with the applicator.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121421795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-04DOI: 10.1109/MWSYM.1985.1132056
H. Shigesawa, M. Tsuji, K. Takiyama
A network approach is proposed for analyzing the interaction of discontinuities in open dielectric waveguides by taking account of the continuous spectrum accurately. This approach develops an unprecedented method to investigate the effect of finite length of periodic structures on their transmission characteristics. This paper discusses this effect on the radiation patterns when a finite periodic structure is operated in the leaky wave region, while in a different regime of operation, we present a new and completely theoretical accurate procedure for the design of grating filters on a dielectric image waveguide, demonstrating successful experiments.
{"title":"Microwave Network Representation of Discontinuity in Open Dielectric Waveguides and its Applications to Periodic Structures","authors":"H. Shigesawa, M. Tsuji, K. Takiyama","doi":"10.1109/MWSYM.1985.1132056","DOIUrl":"https://doi.org/10.1109/MWSYM.1985.1132056","url":null,"abstract":"A network approach is proposed for analyzing the interaction of discontinuities in open dielectric waveguides by taking account of the continuous spectrum accurately. This approach develops an unprecedented method to investigate the effect of finite length of periodic structures on their transmission characteristics. This paper discusses this effect on the radiation patterns when a finite periodic structure is operated in the leaky wave region, while in a different regime of operation, we present a new and completely theoretical accurate procedure for the design of grating filters on a dielectric image waveguide, demonstrating successful experiments.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115460798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-04DOI: 10.1109/MWSYM.1985.1131962
P. Ikalainen, G. Matthaei, D. Park, M. Wei
Techniques for the design of band-pass filters using dielectric waveguide gratings are discussed. Direct-coupled-resonator filter theory is applied to synthesize a prescribed pass band having a Chebyshev or maximally flat characteristic, and at the same time a broad, absorptive stop band is provided through the use of parallel-coupled gratings. Experimental results are also presented which show good agreement between theoretical and measured results.
{"title":"Dielectric Waveguide Band-Pass Filters with Broad Stop Bands","authors":"P. Ikalainen, G. Matthaei, D. Park, M. Wei","doi":"10.1109/MWSYM.1985.1131962","DOIUrl":"https://doi.org/10.1109/MWSYM.1985.1131962","url":null,"abstract":"Techniques for the design of band-pass filters using dielectric waveguide gratings are discussed. Direct-coupled-resonator filter theory is applied to synthesize a prescribed pass band having a Chebyshev or maximally flat characteristic, and at the same time a broad, absorptive stop band is provided through the use of parallel-coupled gratings. Experimental results are also presented which show good agreement between theoretical and measured results.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115471025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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