Pub Date : 1985-06-04DOI: 10.1109/MWSYM.1985.1132068
A. Katz, R. Sudarsanam, D. Aubert
There is an increasing interest in the use of predistortion linearizes to improve Carrier-to-Intermodulation ratios (C/I) of spacecraft power amplifiers. This paper describes a Ku band reflective diode linearizer designed to provide high reliability and to function over the changing environmental conditions required for space applications. This linearize is electrically tunable to allow its characteristics to be easily trimmed to compensate for the different non-linearities of a variety of amplifiers. When used in conjunction with a TWTA, it is is capable of providing a two-tone C/I of 30 dB or an improvement of greater than 10 dB over the critical power back-off range from -3 to -8 dB. Both two and multi-tone C/I performance are reported and the performance degradations of aging, temperature and bandwith are discussed.
{"title":"A Reflective Diode Linearize for Spacecraft Applications","authors":"A. Katz, R. Sudarsanam, D. Aubert","doi":"10.1109/MWSYM.1985.1132068","DOIUrl":"https://doi.org/10.1109/MWSYM.1985.1132068","url":null,"abstract":"There is an increasing interest in the use of predistortion linearizes to improve Carrier-to-Intermodulation ratios (C/I) of spacecraft power amplifiers. This paper describes a Ku band reflective diode linearizer designed to provide high reliability and to function over the changing environmental conditions required for space applications. This linearize is electrically tunable to allow its characteristics to be easily trimmed to compensate for the different non-linearities of a variety of amplifiers. When used in conjunction with a TWTA, it is is capable of providing a two-tone C/I of 30 dB or an improvement of greater than 10 dB over the critical power back-off range from -3 to -8 dB. Both two and multi-tone C/I performance are reported and the performance degradations of aging, temperature and bandwith are discussed.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114717894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-04DOI: 10.1109/MWSYM.1985.1131923
R. Vahldieck, W. Hoefer
The influence of metallization thickness and mounting grooves in unilateral and bilateral fin-lines is investigated with a fully hybrid mode analysis. The effect of these parameters on both the dominant mode propagation and the operating bandwidth can be significant and must be considered for accurate design.
{"title":"The Influence of Metallization Thickness and Mounting Grooves on the Characteristics of Finlines","authors":"R. Vahldieck, W. Hoefer","doi":"10.1109/MWSYM.1985.1131923","DOIUrl":"https://doi.org/10.1109/MWSYM.1985.1131923","url":null,"abstract":"The influence of metallization thickness and mounting grooves in unilateral and bilateral fin-lines is investigated with a fully hybrid mode analysis. The effect of these parameters on both the dominant mode propagation and the operating bandwidth can be significant and must be considered for accurate design.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128872780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-04DOI: 10.1109/MWSYM.1985.1132030
B. Smilowitz
A design procedure for a varactor tuned notch filter is presented. The filter provides speed and agility required for ECM applications where a large interfering signal must be suppressed. The circuit is based on varactor tuned microstrip resonator which is. edge coupled to the signal transmission line. A three stage filter is described which tunes to any frequency between 1070 and 1240 MHz in less than 5 microseconds. It has a 1 dB bandwidth of 100 MHz, a 20 dB bandwidth of 20 MHz, and an RF power capability of 10 mW.
{"title":"High Speed Varactor Tuned Notch Filter","authors":"B. Smilowitz","doi":"10.1109/MWSYM.1985.1132030","DOIUrl":"https://doi.org/10.1109/MWSYM.1985.1132030","url":null,"abstract":"A design procedure for a varactor tuned notch filter is presented. The filter provides speed and agility required for ECM applications where a large interfering signal must be suppressed. The circuit is based on varactor tuned microstrip resonator which is. edge coupled to the signal transmission line. A three stage filter is described which tunes to any frequency between 1070 and 1240 MHz in less than 5 microseconds. It has a 1 dB bandwidth of 100 MHz, a 20 dB bandwidth of 20 MHz, and an RF power capability of 10 mW.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128295328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-04DOI: 10.1109/MWSYM.1985.1132035
K. Shibata, B. Abe, H. Kawasaki, S. Hori, K. Kamei
Two types of broadband amplifiers operating over 18 to 26.5 GHz have been developed by using newly developed 0.4-µm gate HEMTs and conventional 0.25-µm gate GaAs FETs. The four-stage EEMT amplifier exhibits a noise figure of <= 7.2 d.B and a gain of 19.3 +- 1.8 dB and the five-stage GaAs FET amplifier exhibits a noise figure of <= 12 dB and a gain of 22.7 +- 2.2 dB over 18 to 26.5 GHz. The minimum noise figures in the measured frequency ranqe are 5.0 dB and 7.5 dB for the HEMT and GaAs FET amplifiers, respectively. No essential difference is found between the amplifiers in input/output VSWR, output power and temperature variation of noise figure and gain.
{"title":"Broadband HEMT and GaAs FET Amplifiers for 18 - 26.5 GHz","authors":"K. Shibata, B. Abe, H. Kawasaki, S. Hori, K. Kamei","doi":"10.1109/MWSYM.1985.1132035","DOIUrl":"https://doi.org/10.1109/MWSYM.1985.1132035","url":null,"abstract":"Two types of broadband amplifiers operating over 18 to 26.5 GHz have been developed by using newly developed 0.4-µm gate HEMTs and conventional 0.25-µm gate GaAs FETs. The four-stage EEMT amplifier exhibits a noise figure of <= 7.2 d.B and a gain of 19.3 +- 1.8 dB and the five-stage GaAs FET amplifier exhibits a noise figure of <= 12 dB and a gain of 22.7 +- 2.2 dB over 18 to 26.5 GHz. The minimum noise figures in the measured frequency ranqe are 5.0 dB and 7.5 dB for the HEMT and GaAs FET amplifiers, respectively. No essential difference is found between the amplifiers in input/output VSWR, output power and temperature variation of noise figure and gain.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121332011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-04DOI: 10.1109/MWSYM.1985.1132095
M. Pley, Wai-Cheung Tang
A Ku-band, 3-channel contiguous multiplexer has been developed using 5-pole quazi-elliptic function filters. The channel filters are realized as a cascade of dual- and triple-mode cavities operating in the higher order TE/sub 113/ and TM/sub 012/ resonant modes. Measured data from the triplexer correlates well with theory.
{"title":"A Ku-Band Contiguous Multiplexer Employing Low-Loss, Odd-Order, Mixed Dual-Triple Mode Cavity Filters","authors":"M. Pley, Wai-Cheung Tang","doi":"10.1109/MWSYM.1985.1132095","DOIUrl":"https://doi.org/10.1109/MWSYM.1985.1132095","url":null,"abstract":"A Ku-band, 3-channel contiguous multiplexer has been developed using 5-pole quazi-elliptic function filters. The channel filters are realized as a cascade of dual- and triple-mode cavities operating in the higher order TE/sub 113/ and TM/sub 012/ resonant modes. Measured data from the triplexer correlates well with theory.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116986345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-04DOI: 10.1109/MWSYM.1985.1131913
G. Molin, Hu Chuandong, Zhang Shaoshi, Gu Zhongru, Xu Qiang
This paper describes the MIC assembly for 12-GHz direct broadcast satellite(DBS) earth-station receivers. It is a compact assembly consisting of a GaAsFET amplifier, an image rejection filter, a diode mixer, a dielectric resonator oscillator and an IF amplifier. A DBS receiver incorporating this unit achieves an overall noise figure <3.0dB for frequencies from 11.7 to 12.2GHz.
{"title":"MIC Assembly for 12-GHz Direct Broadcast Satellite Receiver","authors":"G. Molin, Hu Chuandong, Zhang Shaoshi, Gu Zhongru, Xu Qiang","doi":"10.1109/MWSYM.1985.1131913","DOIUrl":"https://doi.org/10.1109/MWSYM.1985.1131913","url":null,"abstract":"This paper describes the MIC assembly for 12-GHz direct broadcast satellite(DBS) earth-station receivers. It is a compact assembly consisting of a GaAsFET amplifier, an image rejection filter, a diode mixer, a dielectric resonator oscillator and an IF amplifier. A DBS receiver incorporating this unit achieves an overall noise figure <3.0dB for frequencies from 11.7 to 12.2GHz.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125844390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-04DOI: 10.1109/MWSYM.1985.1131912
A. Ghose, M. Ravichandran, A. Chattopadhyay, N. Ahmad
A compact 6/4 GHz Up/Down converter has been developed specifically for single channel per carrier(SCPC) satellite communications . For operation at remote locations where elaborate instrumentation and skilled personnel are generally not available high reliability and low down time are the prime objectives. These are achieved through extensive use of modular construction and built-in diagnostics employing proven technology.
{"title":"Up/Down Converter for SCPC Applications","authors":"A. Ghose, M. Ravichandran, A. Chattopadhyay, N. Ahmad","doi":"10.1109/MWSYM.1985.1131912","DOIUrl":"https://doi.org/10.1109/MWSYM.1985.1131912","url":null,"abstract":"A compact 6/4 GHz Up/Down converter has been developed specifically for single channel per carrier(SCPC) satellite communications . For operation at remote locations where elaborate instrumentation and skilled personnel are generally not available high reliability and low down time are the prime objectives. These are achieved through extensive use of modular construction and built-in diagnostics employing proven technology.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"274 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126839892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-04DOI: 10.1109/MWSYM.1985.1131972
K. Benson, M. Frerking
The theoretical efficiency for frequency triplers from 300 to 900 GHz has been calculated for real GaAs Schottky diodes operating in the varister mode. The maximum efficiency is determined to be about 7%, only slightly smaller than that for ideal varisters. Guidelines for optimum bias conditions and embedding network impedances have been determined using the large signal analysis computer program of Siegel and Kerr.
{"title":"Theoretical Efficiency for Triplers Using Real Varister Diodes at Submillimeter Wavelengths","authors":"K. Benson, M. Frerking","doi":"10.1109/MWSYM.1985.1131972","DOIUrl":"https://doi.org/10.1109/MWSYM.1985.1131972","url":null,"abstract":"The theoretical efficiency for frequency triplers from 300 to 900 GHz has been calculated for real GaAs Schottky diodes operating in the varister mode. The maximum efficiency is determined to be about 7%, only slightly smaller than that for ideal varisters. Guidelines for optimum bias conditions and embedding network impedances have been determined using the large signal analysis computer program of Siegel and Kerr.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"2012 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133509042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-04DOI: 10.1109/MWSYM.1985.1131934
Chi H. Lee, Ming G. Li, C. Chang, A. Yurek, M. Rhee, E. Chauchard, R. Fischer, A. Rosen, H. Davis
Three different experiments using optoelectronic techniques are reported. They are: (1) kilovolt sequential waveform generation by picosecond optoelectronic switching, (2) Direct DC to RF conversion by impulse excitations of a resonant cavity, and (3) high speed optoelectronic modulation of millimeter-waves in a silicon-on-sapphire waveguide.
{"title":"Optoelectronic Techniques for Microwave and Millimeter-Wave Applications","authors":"Chi H. Lee, Ming G. Li, C. Chang, A. Yurek, M. Rhee, E. Chauchard, R. Fischer, A. Rosen, H. Davis","doi":"10.1109/MWSYM.1985.1131934","DOIUrl":"https://doi.org/10.1109/MWSYM.1985.1131934","url":null,"abstract":"Three different experiments using optoelectronic techniques are reported. They are: (1) kilovolt sequential waveform generation by picosecond optoelectronic switching, (2) Direct DC to RF conversion by impulse excitations of a resonant cavity, and (3) high speed optoelectronic modulation of millimeter-waves in a silicon-on-sapphire waveguide.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"498 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133536075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-06-04DOI: 10.1109/MWSYM.1985.1132024
V. Tripathi, R. J. Bucolo
The quasi-static parameters of multilayered planar structures consisting of lossy and/or anisotropic dielectric media are computed by utilizing a simple, versatile discrete network analog having complex (e.g. , RL, RC) branches. The method is applied to compute the propagation constants, impedances, and field distribution for typical single and coupled strip structures.
{"title":"A Simple Network Analog Approach for the Quasi-Static Characteristics of General Lossy, Anisotropic, Layered Structures","authors":"V. Tripathi, R. J. Bucolo","doi":"10.1109/MWSYM.1985.1132024","DOIUrl":"https://doi.org/10.1109/MWSYM.1985.1132024","url":null,"abstract":"The quasi-static parameters of multilayered planar structures consisting of lossy and/or anisotropic dielectric media are computed by utilizing a simple, versatile discrete network analog having complex (e.g. , RL, RC) branches. The method is applied to compute the propagation constants, impedances, and field distribution for typical single and coupled strip structures.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133576371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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