In this paper, we obtained the optimal structure of QLED top-emission spin-coating device. Meanwhile, we also have successfully developed quantum dots and ZnO ink materials with high stability. With the top-emission device structure and stable ink materials, we optimize the morphology of every film by controlling the drying process after ink-jet printing. The emission area of united devices prepared by using the optimized ink-jet printing process is equal to the designed area of pixels, with clear boundaries, uniform electroluminescent morphologies within a single sub-pixel, and no significant difference in luminescence between pixels. Finally, we assembled and fabricated a 55-in. 8K AMQLED display with a color gamut of 116% NTSC.
{"title":"Development of the ink-jet printing technology for 55-inch 8K AMQLED display","authors":"Yuanming Zhang, Xu Yuan, Zhuo Chen, Dong Li, Jingwen Feng, Yang Gao, Yanzhao Li, Xinguo Li, Xiaoguang Xu","doi":"10.1002/jsid.1217","DOIUrl":"10.1002/jsid.1217","url":null,"abstract":"<p>In this paper, we obtained the optimal structure of QLED top-emission spin-coating device. Meanwhile, we also have successfully developed quantum dots and ZnO ink materials with high stability. With the top-emission device structure and stable ink materials, we optimize the morphology of every film by controlling the drying process after ink-jet printing. The emission area of united devices prepared by using the optimized ink-jet printing process is equal to the designed area of pixels, with clear boundaries, uniform electroluminescent morphologies within a single sub-pixel, and no significant difference in luminescence between pixels. Finally, we assembled and fabricated a 55-in. 8K AMQLED display with a color gamut of 116% NTSC.</p>","PeriodicalId":49979,"journal":{"name":"Journal of the Society for Information Display","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2023-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49183080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jerry Jia, Tsz Tai Chan, Trisha Lian, Kevin W. Rio
The optics between display and human eye in a typical VR/AR headmounted display (HMD) can introduce a common visual defect ‐ local pupil swim (also called local ripples or “orange peel” effect), where virtual content distorts locally with head movement. Compact optical design (such as pancake optics) is increasingly sensitive in design and manufacturing tolerance to this perceptual effect. This work provides a method to root cause and quantify the impact based on perceptual modeling, optics simulation, and measurement.
{"title":"Local pupil swim in Virtual- and Augmented-Reality: Root cause and perception model","authors":"Jerry Jia, Tsz Tai Chan, Trisha Lian, Kevin W. Rio","doi":"10.1002/jsid.1210","DOIUrl":"10.1002/jsid.1210","url":null,"abstract":"The optics between display and human eye in a typical VR/AR headmounted display (HMD) can introduce a common visual defect ‐ local pupil swim (also called local ripples or “orange peel” effect), where virtual content distorts locally with head movement. Compact optical design (such as pancake optics) is increasingly sensitive in design and manufacturing tolerance to this perceptual effect. This work provides a method to root cause and quantify the impact based on perceptual modeling, optics simulation, and measurement.","PeriodicalId":49979,"journal":{"name":"Journal of the Society for Information Display","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2023-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46130259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report a method for low‐cost deposition of bubble‐free, high‐quality amorphous InGaZnO (a‐IGZO) on polyimide (PI) substrate for foldable active‐matrix organic light emitting diode (AMOLED) display by spray pyrolysis. The coplanar thin‐film transistor (TFT) with spray‐pyrolyzed (SP) a‐IGZO on PI substrate exhibits threshold voltage (VTH) of −0.8 V, saturation mobility of 40.95 cm2 V−1 s−1, and subthreshold swing of 0.18 V per decade with on/off drain current ratio of ~108. The high mobility TFT could be achieved using high substrate temperature (350°C) and low contact resistance by NF3 plasma on the SP a‐IGZO. The TFT shows a ΔVTH of −0.4 V when it is bent on a cylinder of 1‐mm radius. The TFT shows the ΔVTH of +0.05 V for positive bias temperature stress at +20 V at 60°C for 1 h. The ring oscillator made of a‐IGZO TFTs exhibits an oscillation frequency of 2.38 MHz at VDD of 10 V with a propagation delay of 9.13 ns per stage. Therefore, the a‐IGZO TFT by spray pyrolysis could be used for low‐cost, high‐performance, and flexible display TFT backplane.
本文报道了一种在聚酰亚胺(PI)衬底上低成本沉积无气泡、高质量非晶InGaZnO (a - IGZO)的方法,该方法用于可折叠有源基质有机发光二极管(AMOLED)显示器。在PI衬底上采用喷雾热解(SP) a - IGZO的共面薄膜晶体管(TFT)表现出阈值电压(VTH)为−0.8 V,饱和迁移率为40.95 cm2 V−1 s−1,亚阈值摆幅为0.18 V / 10年,通/关漏电流比为~108。利用SP - IGZO上的NF3等离子体的高衬底温度(350°C)和低接触电阻,可以实现高迁移率TFT。当TFT在半径为1 mm的圆柱体上弯曲时,其电压ΔVTH为−0.4 V。在+20 V、60℃、1小时的正偏置温度应力下,TFT的ΔVTH值为+0.05 V。由a - IGZO TFT制成的环形振荡器在VDD为10 V时的振荡频率为2.38 MHz,每级的传播延迟为9.13 ns。因此,通过喷雾热解制备的a - IGZO TFT可用于低成本、高性能、柔性的显示TFT背板。
{"title":"High-performance, coplanar amorphous InGaZnO thin-film transistors by spray pyrolysis on polyimide substrate for low-cost manufacturing of foldable active-matrix organic light emitting diode display","authors":"Jinbaek Bae, Arqum Ali, Chanju Park, Jin Jang","doi":"10.1002/jsid.1209","DOIUrl":"10.1002/jsid.1209","url":null,"abstract":"We report a method for low‐cost deposition of bubble‐free, high‐quality amorphous InGaZnO (a‐IGZO) on polyimide (PI) substrate for foldable active‐matrix organic light emitting diode (AMOLED) display by spray pyrolysis. The coplanar thin‐film transistor (TFT) with spray‐pyrolyzed (SP) a‐IGZO on PI substrate exhibits threshold voltage (VTH) of −0.8 V, saturation mobility of 40.95 cm2 V−1 s−1, and subthreshold swing of 0.18 V per decade with on/off drain current ratio of ~108. The high mobility TFT could be achieved using high substrate temperature (350°C) and low contact resistance by NF3 plasma on the SP a‐IGZO. The TFT shows a ΔVTH of −0.4 V when it is bent on a cylinder of 1‐mm radius. The TFT shows the ΔVTH of +0.05 V for positive bias temperature stress at +20 V at 60°C for 1 h. The ring oscillator made of a‐IGZO TFTs exhibits an oscillation frequency of 2.38 MHz at VDD of 10 V with a propagation delay of 9.13 ns per stage. Therefore, the a‐IGZO TFT by spray pyrolysis could be used for low‐cost, high‐performance, and flexible display TFT backplane.","PeriodicalId":49979,"journal":{"name":"Journal of the Society for Information Display","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2023-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45348915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yao Li, Haonan Jiang, Yinguo Yan, Yongzhen Liu, Ziping Zhou, Enguo Chen, Yun Ye, Sheng Xu, Qun Yan, Tailiang Guo
Pico-projection displays are the main developing direction for future projection displays, but the balance between the optical efficiency and the system size is still a big concern. This paper presents a pico-projector design based on micro-LED (μLED) light sources. Firstly, based on the analysis of the characteristics of μLED, a highly integrated microlens array is designed to improve the system efficiency by reshaping the spatial light distribution. In addition, the matching relationship between the aperture angle of projection lens and the divergence angle of μLED is studied, and on this basis, a set of four-piece spherical lens group is proposed to achieve compact size. Simulation results show that the μLED equipped with the microlens array can concentrate about 86% of the light energy within a dispersion angle of ±20°, thus increasing the light energy utilization by about 3.5 times and reducing the size of the pico-projector to 30.18 mm3. The designed pico-projector has high performance and compact size with great potential for future applications.
{"title":"Highly efficient and ultra-compact micro-LED pico-projector based on a microlens array","authors":"Yao Li, Haonan Jiang, Yinguo Yan, Yongzhen Liu, Ziping Zhou, Enguo Chen, Yun Ye, Sheng Xu, Qun Yan, Tailiang Guo","doi":"10.1002/jsid.1215","DOIUrl":"10.1002/jsid.1215","url":null,"abstract":"<p>Pico-projection displays are the main developing direction for future projection displays, but the balance between the optical efficiency and the system size is still a big concern. This paper presents a pico-projector design based on micro-LED (μLED) light sources. Firstly, based on the analysis of the characteristics of μLED, a highly integrated microlens array is designed to improve the system efficiency by reshaping the spatial light distribution. In addition, the matching relationship between the aperture angle of projection lens and the divergence angle of μLED is studied, and on this basis, a set of four-piece spherical lens group is proposed to achieve compact size. Simulation results show that the μLED equipped with the microlens array can concentrate about 86% of the light energy within a dispersion angle of ±20°, thus increasing the light energy utilization by about 3.5 times and reducing the size of the pico-projector to 30.18 mm<sup>3</sup>. The designed pico-projector has high performance and compact size with great potential for future applications.</p>","PeriodicalId":49979,"journal":{"name":"Journal of the Society for Information Display","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2023-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42718937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Aochen Du, Wenxiao Zhao, Yun Ye, Enguo Chen, Sheng Xu, Tailiang Guo
Due to the instability of perovskite quantum-dots (PQDs), their applications in optoelectronic devices, in reality, are limited. In this paper, Cs(Pb,Sb)Br3 PQDs@glasses were successfully prepared by traditional melting quenching and heat treatment methods. The optical characterization shows that Cs(Pb0.7Sb0.3)Br3 PQDs@glasses has an emission peak of 518 nm and a full width at half maximum of 20 nm, and the photoluminescence quantum yield (PLQY) is 58%. The electronic structure of Cs(Pb0.875Sb0.125)Br3 has been studied by first principles. The stable range of chemical potential of each element in CsPbBr3 is calculated by first principles. It is proved that CsPbBr3 is an excellent PQDs luminescent material. The thermal analysis and temperature-dependent photoluminescence spectra prove the stability of the PQDs@glass within 200°. The thermal distribution of the sample under laser irradiation is measured by a finite element method. In addition, Cs(Pb,Sb)Br3 PQDs@glasses are combined with AlN-(Ca,Eu)AlSiN3 ceramic phosphors to prepare phosphor wheels, which shows that these materials have potential application prospects in the field of display.
{"title":"Perovskite quantum-dots glasses with excellent stability and optical properties for laser projection","authors":"Aochen Du, Wenxiao Zhao, Yun Ye, Enguo Chen, Sheng Xu, Tailiang Guo","doi":"10.1002/jsid.1214","DOIUrl":"10.1002/jsid.1214","url":null,"abstract":"<p>Due to the instability of perovskite quantum-dots (PQDs), their applications in optoelectronic devices, in reality, are limited. In this paper, Cs(Pb,Sb)Br<sub>3</sub> PQDs@glasses were successfully prepared by traditional melting quenching and heat treatment methods. The optical characterization shows that Cs(Pb<sub>0.7</sub>Sb<sub>0.3</sub>)Br<sub>3</sub> PQDs@glasses has an emission peak of 518 nm and a full width at half maximum of 20 nm, and the photoluminescence quantum yield (PLQY) is 58%. The electronic structure of Cs(Pb<sub>0.875</sub>Sb<sub>0.125</sub>)Br<sub>3</sub> has been studied by first principles. The stable range of chemical potential of each element in CsPbBr<sub>3</sub> is calculated by first principles. It is proved that CsPbBr<sub>3</sub> is an excellent PQDs luminescent material. The thermal analysis and temperature-dependent photoluminescence spectra prove the stability of the PQDs@glass within 200°. The thermal distribution of the sample under laser irradiation is measured by a finite element method. In addition, Cs(Pb,Sb)Br<sub>3</sub> PQDs@glasses are combined with AlN-(Ca,Eu)AlSiN<sub>3</sub> ceramic phosphors to prepare phosphor wheels, which shows that these materials have potential application prospects in the field of display.</p>","PeriodicalId":49979,"journal":{"name":"Journal of the Society for Information Display","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2023-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44365739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pancake lens structure offers a promising solution to compact formfactor for near-eye displays. However, utilizing a half mirror to triple the optical path length causes a dramatic optical loss. The theoretical maximum optical efficiency is only 25%. To balance the tradeoff between compact formfactor and optical efficiency, here we propose a new folded optical structure with a doubled efficiency and doubled optical path length, using two polarization-selective cholesteric liquid crystal reflectors. Simulation results agree with the experiment reasonably well. Two display configurations are established to evaluate the imaging performances of the proposed pancake lens structure.
{"title":"High-efficiency folded optics for near-eye displays","authors":"Zhenyi Luo, Yuqiang Ding, Yi Rao, Shin-Tson Wu","doi":"10.1002/jsid.1207","DOIUrl":"10.1002/jsid.1207","url":null,"abstract":"<p>Pancake lens structure offers a promising solution to compact formfactor for near-eye displays. However, utilizing a half mirror to triple the optical path length causes a dramatic optical loss. The theoretical maximum optical efficiency is only 25%. To balance the tradeoff between compact formfactor and optical efficiency, here we propose a new folded optical structure with a doubled efficiency and doubled optical path length, using two polarization-selective cholesteric liquid crystal reflectors. Simulation results agree with the experiment reasonably well. Two display configurations are established to evaluate the imaging performances of the proposed pancake lens structure.</p>","PeriodicalId":49979,"journal":{"name":"Journal of the Society for Information Display","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2023-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47110221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Reflective polarization volume gratings (PVGs) can be used as input and output couplers in a diffractive waveguide-based augmented reality (AR). To improve the stability and wearing comfort, a thin and lightweight full-color waveguide display is needed. In this paper, we propose a single full-color waveguide AR display based on PVGs. By analyzing the optical system, we derived the field of view limit by optimizing a three-layer PVG as an in-coupler. Pairing with a single-layer, thin PVG as an out-coupler, we can achieve a relatively uniform exit pupil of 8 mm at horizontal pupil expansion direction.
{"title":"Design optimization of polarization volume gratings for full-color waveguide-based augmented reality displays","authors":"Yuqiang Ding, Yannanqi Li, Qian Yang, Shin-Tson Wu","doi":"10.1002/jsid.1206","DOIUrl":"10.1002/jsid.1206","url":null,"abstract":"<p>Reflective polarization volume gratings (PVGs) can be used as input and output couplers in a diffractive waveguide-based augmented reality (AR). To improve the stability and wearing comfort, a thin and lightweight full-color waveguide display is needed. In this paper, we propose a single full-color waveguide AR display based on PVGs. By analyzing the optical system, we derived the field of view limit by optimizing a three-layer PVG as an in-coupler. Pairing with a single-layer, thin PVG as an out-coupler, we can achieve a relatively uniform exit pupil of 8 mm at horizontal pupil expansion direction.</p>","PeriodicalId":49979,"journal":{"name":"Journal of the Society for Information Display","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2023-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45457509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We have developed novel cholesteric liquid crystal (Ch-LC) films creating angle insensitive reflective colors. The wavy alignment formed by rapid change of the helical twisting power (HTP) enables the suppression of color shift with different incident angles of light. These films open the door to create various decorative films for innovative applications.
{"title":"Novel cholesteric liquid crystal films creating angle insensitive reflective colors","authors":"Haruka Sano, Akihiro Ishii, Tomohiro Mizuno, Rie Takasago, Syunya Kato, Makoto Ishiguro, Yuichi Hayata, Michio Nagai, Yoji Ito","doi":"10.1002/jsid.1203","DOIUrl":"10.1002/jsid.1203","url":null,"abstract":"<p>We have developed novel cholesteric liquid crystal (Ch-LC) films creating angle insensitive reflective colors. The wavy alignment formed by rapid change of the helical twisting power (HTP) enables the suppression of color shift with different incident angles of light. These films open the door to create various decorative films for innovative applications.</p>","PeriodicalId":49979,"journal":{"name":"Journal of the Society for Information Display","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2023-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43334496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jing Wang, Menglan Xie, Huiqing Pang, Cuifang Zhang, Ming Sang, Qi Zhang, Wei Cai, Raymond Kwong, Sean Xia
In this work, we investigated the potential for phosphorescent emitters to achieve the BT.2020 color standard in displays, where the CIE coordinates for red and green are (0.709, 0.292) and (0.170, 0.797), respectively. Optical simulations were performed for both green and red top emission organic light emitting devices (OLEDs). For the green emitter, it is possible to reach (0.170, 0.785) using a spectrum with a peak wavelength (λmax) at 526 nm and a full width at half maximum (FWHM) less than 30 nm. For the red emitter, in order to achieve (0.708, 0.292) while maintaining a high current efficiency (CE), it is important to decrease the FWHM instead of red-shifting the spectrum. Following the guidance of these simulation results, we designed and synthesized novel deep green (DGD) and deep red phosphorescent (DRD-II) emitters. The photoluminescent (PL) spectrum of DGD shows an FWHM of 30 nm and a λmax of 523 nm. A top-emission green OLED built using DGD reached a CE of 171 cd/A at an operating voltage of 3.3 V and a lifetime of 95% of initial brightness (LT95) > 1300 h at 10 mA/cm2 with a CIE (x, y) = (0.170, 0.777). This is, to our knowledge, the best device performance ever reported for a green phosphorescent OLED at this CIE y. The PL spectrum of DRD-II has a λmax of 630 nm with an FWHM of 30 nm. A top-emission red OLED built with DRD-II achieved a CE of 59 cd/A, an operating voltage of 3.2 V and an LT95 over 20,000 h at a drive current of 10 mA/cm2 with a CIE (x, y) = (0.708, 0.292). We also studied the angular dependence of the above devices and found they were comparable to devices with commercial emitters for the Digital Cinema Initiative P3 (DCI-P3) standard that had a wider FWHM. Combining these green and red emitters with a commercial blue OLED at (0.131, 0.046), we are able to cover 97% of the BT.2020 color gamut. The results using DGD and DRD-II suggest that they have great potential to satisfy BT.2020 in an organic phosphorescent system.
{"title":"High performance red and green phosphorescent emitters suitable for the BT.2020 color gamut","authors":"Jing Wang, Menglan Xie, Huiqing Pang, Cuifang Zhang, Ming Sang, Qi Zhang, Wei Cai, Raymond Kwong, Sean Xia","doi":"10.1002/jsid.1205","DOIUrl":"10.1002/jsid.1205","url":null,"abstract":"<p>In this work, we investigated the potential for phosphorescent emitters to achieve the BT.2020 color standard in displays, where the CIE coordinates for red and green are (0.709, 0.292) and (0.170, 0.797), respectively. Optical simulations were performed for both green and red top emission organic light emitting devices (OLEDs). For the green emitter, it is possible to reach (0.170, 0.785) using a spectrum with a peak wavelength (λ<sub>max</sub>) at 526 nm and a full width at half maximum (FWHM) less than 30 nm. For the red emitter, in order to achieve (0.708, 0.292) while maintaining a high current efficiency (CE), it is important to decrease the FWHM instead of red-shifting the spectrum. Following the guidance of these simulation results, we designed and synthesized novel deep green (DGD) and deep red phosphorescent (DRD-II) emitters. The photoluminescent (PL) spectrum of DGD shows an FWHM of 30 nm and a λ<sub>max</sub> of 523 nm. A top-emission green OLED built using DGD reached a CE of 171 cd/A at an operating voltage of 3.3 V and a lifetime of 95% of initial brightness (LT<sub>95</sub>) > 1300 h at 10 mA/cm<sup>2</sup> with a CIE (x, y) = (0.170, 0.777). This is, to our knowledge, the best device performance ever reported for a green phosphorescent OLED at this CIE y. The PL spectrum of DRD-II has a λ<sub>max</sub> of 630 nm with an FWHM of 30 nm. A top-emission red OLED built with DRD-II achieved a CE of 59 cd/A, an operating voltage of 3.2 V and an LT<sub>95</sub> over 20,000 h at a drive current of 10 mA/cm<sup>2</sup> with a CIE (x, y) = (0.708, 0.292). We also studied the angular dependence of the above devices and found they were comparable to devices with commercial emitters for the Digital Cinema Initiative P3 (DCI-P3) standard that had a wider FWHM. Combining these green and red emitters with a commercial blue OLED at (0.131, 0.046), we are able to cover 97% of the BT.2020 color gamut. The results using DGD and DRD-II suggest that they have great potential to satisfy BT.2020 in an organic phosphorescent system.</p>","PeriodicalId":49979,"journal":{"name":"Journal of the Society for Information Display","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2023-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48957298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yannick Schellander, Marius Winter, Maurice Schamber, Fabian Munkes, Patrick Schalberger, Harald Kuebler, Tilman Pfau, Norbert Fruehauf
In this work, real-time ultraviolet photodetectors are realized through metal–semiconductor–metal (MSM) structures. Amorphous indium gallium zinc oxide (a-IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance amplifier (TIA) consisting of an all-enhancement a-IGZO thin-film transistor (TFT) operational amplifier and a switched capacitor (SC) as feedback resistance. The photosensor and the transimpedance amplifier are both manufactured on glass substrates. The measured photosensor possesses a high responsivity R, a low response time tRES, and a good noise equivalent power value NEP.
{"title":"Ultraviolet photodetectors and readout based on a-IGZO semiconductor technology","authors":"Yannick Schellander, Marius Winter, Maurice Schamber, Fabian Munkes, Patrick Schalberger, Harald Kuebler, Tilman Pfau, Norbert Fruehauf","doi":"10.1002/jsid.1202","DOIUrl":"10.1002/jsid.1202","url":null,"abstract":"<p>In this work, real-time ultraviolet photodetectors are realized through metal–semiconductor–metal (MSM) structures. Amorphous indium gallium zinc oxide (a-IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance amplifier (TIA) consisting of an all-enhancement a-IGZO thin-film transistor (TFT) operational amplifier and a switched capacitor (SC) as feedback resistance. The photosensor and the transimpedance amplifier are both manufactured on glass substrates. The measured photosensor possesses a high responsivity <i><b>R</b></i>, a low response time <i><b>t</b></i><sub><b>R</b><b>E</b><b>S</b></sub>, and a good noise equivalent power value <i><b>NEP</b></i>.</p>","PeriodicalId":49979,"journal":{"name":"Journal of the Society for Information Display","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2023-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jsid.1202","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41451313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}