Journal of the Society for Information Display最新文献

The Electrowetting Display (EWD) has numerous advantages making it a potential candidate for flexible displays. However, there has been limited research on the bending performance of Flexible Electrowetting Displays (FLEWD) and their feasibility in terms of flexibility has not been confirmed. To investigate the impact of bending on stability performance, FLEWD using flexible active-matrix substrate and PEN conductive substrates were fabricated. A systematic performance evaluation system for flexible devices is established. The results showed that FLEWD can display videos normally during bending. In the off state, the device can withstand a bending limit represented by a radius of 2 cm at a bending speed of 80 mm/s for 5,000 times. In the on state, the corresponding limits are 4 cm, 40 mm/s, and 100 times. Besides, the failure mode of FLEWD bending is clarified, which provides a guideline for the improvement of the flexural performance of flexible EWD in the future.

Virtual reality (VR) headsets with pancake lenses require organic light-emitting diode-on-silicon (OLEDoS) panels for higher pixel density and superior image quality. Achieving high-quality OLEDoS panels necessitates integrating pixel compensation circuits within the limited pixel area of high-resolution displays. However, reduced transistor count increases Vth variation, while smaller storage capacitors with higher parasitic capacitance degrade image quality. This study proposes a novel 7T1C pixel compensation circuit for 4032-ppi OLEDoS panels operating at 8 V. The circuit minimizes the body effect in CMOS transistors by maintaining equal voltage at the source and body nodes of the driving transistor. An area-efficient single-capacitor design and a data-driving method without toggling mitigate image quality degradation caused by capacitor coupling. The proposed 4032-ppi panel enhances short-range uniformity (SRU) from 90.4% to 97.3% and reduces horizontal cross-talk from 2.0% to 1.3%.

The latest light-field displays (LFDs) have improved greatly with head tracking but continue to be based on the approximate pinhole model, meaning that cross-talk is often visible at large viewing angles and when virtual objects are distant from the display panel. To address these problems, our real-time LFD technique evaluates a full optical model for every frame and then displays an image predistorted during ray-traced rendering at the subpixel level to the current pixel-to-eye light flow, reducing cross-talk and increasing viewing angle. A comparison to imagery produced with the pinhole model shows clear advantages for our LFD technique, and in a user study with interactive, head-tracked display of several different scenes, viewers reported a significant preference for our novel LFD technique. Our unoptimized prototype implementation is already real time, and as GPUs improve in performance and ray tracing becomes increasingly common, we expect that our LFD technique will be easy to add to a variety of 3D applications, including games.

A precise and efficient patterning method for mesh-structured electrodes is crucial for fabricating transparent and flexible quantum-dot light-emitting diodes (TF-QLEDs). In this study, we present an electrohydrodynamic (EHD) printing method to directly pattern Ag mesh electrodes on flexible QLED devices, eliminating the need for sacrificial layers or chemical etching. By investigating the printing parameters, we achieved Ag mesh electrodes with excellent optical transparency exceeding 84%T, electrical conductivity with a sheet resistance of less than 8 Ω/sq, and mechanical stability with less than 5% variation after over 2000 bending cycles. These mesh-patterned electrodes demonstrated superior characteristics compared to conventional electrodes. Additionally, the device efficiency of mesh-patterned electrodes was comparable to that of conventional planar electrodes, making them highly suitable for flexible electronic devices. This method offers significant advantages in transparency, flexibility, and cost-efficiency, presenting a promising approach for the fabrication of next-generation flexible displays.

This study aims to achieve high-yield micro-LED chip bonding and thus further advance the innovation of micro-LED interconnection technology. In this research, an electroless plating method was used to achieve the highly uniform nickel bump arrays on a thin-film transistor (TFT) driver substrate. Initially, the photoresists AZ4620 and AZ2070 are chosen for the experiments, which can cover the step structure uniformly of TFT substrate. Subsequently, the shape of bumps on the TFT substrate influenced by the plasma treatment and the deposition time was investigated. The result indicated that microbump arrays with a uniformity of less than 1% could be successfully fabricated by employing a 5-min plasma treatment and incorporating surfactant additions at concentrations of 0.02%, and the process of preparation has a high repeatability, which lays a solid foundation for the subsequent electroless plating bonding, and provides a critical reference for the breakthrough of micro-LED interconnection key technology.

Eye-tracking technology has been widely adopted in the extended reality (XR) industry, particularly in applications such as foveated rendering, eye-tracking interactions, and optical algorithm compensation, enhancing user immersion and providing smooth virtual experiences. For near-eye display systems integrated with eye-tracking capabilities, optical performance metrics such as the contrast transfer function (CTF), distortion, chromaticity uniformity (CU), and chromatic aberration (CA) vary with shifts in the user's fixation point, rendering traditional measurement methods inadequate for such systems. To address this, this paper proposes a novel approach for measuring CTF based on foveated rendering, as well as a dynamic compensation-based method for assessing distortion, CU and CA in eye-tracking near-eye display systems. Experiments are conducted to measure the CTF under both eye-tracked foveated rendering (ETFR) and fixed foveated rendering (FFR). The results demonstrate that the CTF under ETFR is higher than that under FFR, more accurately reflecting the image clarity perceived by the human eye. Additionally, CU shows marked improvement after compensation, with a noticeable reduction in green color shift. The average $�∆�u^{\prime }�v^{\prime }$ decreases from 0.0092 to 0.0042, suggesting improved CU. Moreover, dynamic distortion is effectively mitigated after compensation. However, CA exhibited no significant improvement after compensation.

In this paper, we propose an 11-bit source driver IC optimized for high-resolution OLED display driving. The proposed IC adopts a Double Capacitor Coupled Adder (DCCA) structure, which enables parallel execution of the sampling and driving stages, thereby improving temporal efficiency and response speed. Additionally, we introduce a novel Slew Rate Enhancement (SRE) structure that enables rapid response even in conditions with minimal input–output voltage differences, delivering performance well-suited for high-resolution display driving. An Offset Calibration circuit is included to minimize inter-channel voltage discrepancies, ensuring high precision and consistent output performance. Experimental results demonstrate that the proposed IC achieves a short horizontal line time(H) of 2.0 μs and a slew rate of 9.9 V/μs. The differential nonlinearity (DNL) and integral nonlinearity (INL) are 0.66 LSB and 0.98 LSB, respectively, and, after Offset Calibration, the maximum inter-channel deviation of output voltage (DVO) is reduced to 2.43 mV.

Denoising sensor-captured images on edge display devices remains challenging due to deep neural networks' (DNNs) high computational overhead and synthetic noise training limitations. This work proposes BDLUT(-D), a novel blind denoising method combining optimized lookup tables (LUTs) with hardware-centric design. While BDLUT describes the LUT-based network architecture, BDLUT-D represents BDLUT trained with a specialized noise degradation model. Designed for edge deployment, BDLUT(-D) eliminates neural processing units (NPUs) and functions as a standalone ASIC IP solution. Experimental results demonstrate BDLUT-D achieves up to 2.42 dB improvement over state-of-the-art LUT methods on mixed-noise-intensity benchmarks, requiring only 66 KB storage. FPGA implementation shows over 10$�\times$ reduction in logic resources, 75% less storage compared to DNN accelerators, while achieving 57% faster processing than traditional bilateral filtering methods. These optimizations enable practical integration into edge scenarios like low-cost webcam enhancement and real-time 4 K-to-4 K denoising without compromising resolution or latency. By enhancing silicon efficiency and removing external accelerator dependencies, BDLUT(-D) establishes a new standard for practical edge imaging denoising. Implementation is available at https://github.com/HKU-LiBoyu/BDLUT.

Color and luminance of OLED panel may shift under different ambient temperatures. To address this, raw data from touch sensors can be used to obtain local temperature information. By using this data, the proposed compensation method can be employed to solve the effects of temperature-induced color and luminance shifts. After compensation, OLED panels can provide a more stable and reliable visual experience in diverse ambient temperatures.

We propose and demonstrate the concept of hydrogen-free (H-free) amorphous oxide semiconductor thin-film transistors (AOS TFTs) to resolve hydrogen-associated instability of TFT. H-free SiO₂ and SiN_x films were successfully deposited by large-area inductively coupled plasma chemical vapor deposition (ICP-CVD) using hydrogen-free source gases. H-free SiO₂ and SiN_x films were applied as the gate insulator and passivation layers of the TFT, respectively. The H-free In–Ga–Zn–Sn–O (IGZTO) TFT exhibited field-effect mobility of 23.2 cm²V⁻¹ s⁻¹ and excellent stability under positive gate bias stresses for 7,200 s at stress temperatures in the range of 60–100°C.