In spatiotemporally modulated systems, topological states exist not only in energy gaps but also in momentum gaps. Such unconventional topological states impose challenges on topological physics. The underlying models also make the conventional Hamiltonian descriptions complicated. Here, we propose to describe such systems with space- and time-direction transfer matrices which substantially simplify the underlying theory and give direct information on the topological properties of the quasienergy and quasimomentum gaps. In particular, we find that the space- and time-direction reflection phases can serve as signatures for distinguishing various topological phases of the quasienergy and quasimomentum gaps. This approach directly reveals the topological properties of the band gap, avoiding the complexity in calculating bulk band topology in hybrid energy-moment space. By investigating two concrete models, we show that the method works well for both Hermitian and non-Hermitian systems. Furthermore, we uncover an unconventional topological state, called the anomalous Floquet quasimomentum gap, whose topological properties are invariant for different choices of the unit-cell center. This work advances the study of topological phenomena in hybrid space-time (energy-momentum) dimension that are attracting much interest due to the development of spatiotemporally modulated materials.
{"title":"Characterizing generalized Floquet topological states in hybrid space-time dimensions","authors":"Weiwei Zhu, Jian-Hua Jiang","doi":"arxiv-2409.09937","DOIUrl":"https://doi.org/arxiv-2409.09937","url":null,"abstract":"In spatiotemporally modulated systems, topological states exist not only in\u0000energy gaps but also in momentum gaps. Such unconventional topological states\u0000impose challenges on topological physics. The underlying models also make the\u0000conventional Hamiltonian descriptions complicated. Here, we propose to describe\u0000such systems with space- and time-direction transfer matrices which\u0000substantially simplify the underlying theory and give direct information on the\u0000topological properties of the quasienergy and quasimomentum gaps. In\u0000particular, we find that the space- and time-direction reflection phases can\u0000serve as signatures for distinguishing various topological phases of the\u0000quasienergy and quasimomentum gaps. This approach directly reveals the\u0000topological properties of the band gap, avoiding the complexity in calculating\u0000bulk band topology in hybrid energy-moment space. By investigating two concrete\u0000models, we show that the method works well for both Hermitian and non-Hermitian\u0000systems. Furthermore, we uncover an unconventional topological state, called\u0000the anomalous Floquet quasimomentum gap, whose topological properties are\u0000invariant for different choices of the unit-cell center. This work advances the\u0000study of topological phenomena in hybrid space-time (energy-momentum) dimension\u0000that are attracting much interest due to the development of spatiotemporally\u0000modulated materials.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142259965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Christina Vantaraki, Petter Ström, Tuan T. Tran, Matías P. Grassi, Giovanni Fevola, Michael Foerster, Jerzy T. Sadowski, Daniel Primetzhofer, Vassilios Kapaklis
We present a method for the additive fabrication of planar magnetic nanoarrays with minimal surface roughness. Synthesis is accomplished by combining electron-beam lithography, used to generate nanometric patterned masks, with ion implantation in thin films. By implanting $^{56}$Fe$^{+}$ ions, we are able to introduce magnetic functionality in a controlled manner into continuous Pd thin films, achieving 3D spatial resolution down to a few tens of nanometers. Our results demonstrate the successful application of this technique in fabricating square artificial spin ice lattices, which exhibit well-defined magnetization textures and interactions among the patterned magnetic elements.
{"title":"Magnetic metamaterials by ion-implantation","authors":"Christina Vantaraki, Petter Ström, Tuan T. Tran, Matías P. Grassi, Giovanni Fevola, Michael Foerster, Jerzy T. Sadowski, Daniel Primetzhofer, Vassilios Kapaklis","doi":"arxiv-2409.10433","DOIUrl":"https://doi.org/arxiv-2409.10433","url":null,"abstract":"We present a method for the additive fabrication of planar magnetic\u0000nanoarrays with minimal surface roughness. Synthesis is accomplished by\u0000combining electron-beam lithography, used to generate nanometric patterned\u0000masks, with ion implantation in thin films. By implanting $^{56}$Fe$^{+}$ ions,\u0000we are able to introduce magnetic functionality in a controlled manner into\u0000continuous Pd thin films, achieving 3D spatial resolution down to a few tens of\u0000nanometers. Our results demonstrate the successful application of this\u0000technique in fabricating square artificial spin ice lattices, which exhibit\u0000well-defined magnetization textures and interactions among the patterned\u0000magnetic elements.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142259964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Igor M. Braver, Pinkhos Sh. Fridberg, Khona L. Garb
Dependence on the square resistance of the linear attenuation caused by an absorbing vane in a circular waveguide is investigated. The maximal attenuation is determined to be attained at the square resistance values in the range 130-150 $Omega$. Special constructions of impedance-matched low-reflectivity absorbing vanes are proposed and production-ready structural calculation are carried out.
{"title":"Determination of the Optimum Square Resistance of Absorbing Vanes of the Rotary Vane Attenuator","authors":"Igor M. Braver, Pinkhos Sh. Fridberg, Khona L. Garb","doi":"arxiv-2409.09700","DOIUrl":"https://doi.org/arxiv-2409.09700","url":null,"abstract":"Dependence on the square resistance of the linear attenuation caused by an\u0000absorbing vane in a circular waveguide is investigated. The maximal attenuation\u0000is determined to be attained at the square resistance values in the range\u0000130-150 $Omega$. Special constructions of impedance-matched low-reflectivity\u0000absorbing vanes are proposed and production-ready structural calculation are\u0000carried out.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142259959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Priyesh Kumar, Sudip Kumar Deb, Subhananda Chakrabarti, Jhuma Saha
An experimental study of optical phonon modes, both normal and interface (IF) phonons, in bilayer strain-coupled InAs/GaAs_(1-x)Sb_x quantum dot heterostructures has been presented by means of low-temperature polarized Raman scattering. The effect of Sb-content on the frequency positions of these phonon modes has been very well correlated with the simulated strain. The Raman peaks show different frequency shifts in the heterostructure with varying Sb-content in the capping layer. This shift is attributed to the strain relaxation, bigger size of quantum dots and type-II band alignment.
通过低温偏振拉曼散射，对双层应变耦合 InAs/GaAs_(1-x)Sb_x 量子二硬质结构中的光学声子模式（包括法向声子和界面（IF）声子）进行了实验研究。Sb含量对这些声子模式频率位置的影响与模拟应变有很好的相关性。随着封盖层中 Sb 含量的变化，异质结构中的拉曼峰出现了不同的频率偏移。这种偏移可归因于应变松弛、量子点变大以及 II 型带排列。
{"title":"Polarized Raman Analysis at Low Temperature to Examine Interface Phonons in InAs/GaAs_(1-x)Sb_x Quantum Dot Heterostructures","authors":"Priyesh Kumar, Sudip Kumar Deb, Subhananda Chakrabarti, Jhuma Saha","doi":"arxiv-2409.09631","DOIUrl":"https://doi.org/arxiv-2409.09631","url":null,"abstract":"An experimental study of optical phonon modes, both normal and interface (IF)\u0000phonons, in bilayer strain-coupled InAs/GaAs_(1-x)Sb_x quantum dot\u0000heterostructures has been presented by means of low-temperature polarized Raman\u0000scattering. The effect of Sb-content on the frequency positions of these phonon\u0000modes has been very well correlated with the simulated strain. The Raman peaks\u0000show different frequency shifts in the heterostructure with varying Sb-content\u0000in the capping layer. This shift is attributed to the strain relaxation, bigger\u0000size of quantum dots and type-II band alignment.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142259967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The non-uniform current distribution arisen from either current crowding effect or hot spot effect provides a method to tailor the interaction between thermal gradient and electron transport in magnetically ordered systems. Here we apply the device structural engineering to realize an in-plane inhomogeneous temperature distribution within the conduction channel, and the resulting geometric anomalous Nernst effect (GANE) gives rise to a non-zero 2nd -harmonic resistance whose polarity corresponds to the out-of-plane magnetization of Co/Pt multi-layer thin film, and its amplitude is linearly proportional to the applied current. By optimizing the aspect ratio of convex-shaped device, the effective temperature gradient can reach up to 0.3 K/$mu$m along the y-direction, leading to a GANE signal of 28.3 $mu$V. Moreover, we demonstrate electrical write and read operations in the perpendicularly-magnetized Co/Pt-based spin-orbit torque device with a simple two-terminal structure. Our results unveil a new pathway to utilize thermoelectric effects for constructing high-density magnetic memories
{"title":"Electrical detection in two-terminal perpendicularly magnetized devices via geometric anomalous Nernst effect","authors":"Jiuming Liu, Bin Rong, Hua Bai, Xinqi Liu, Yanghui Liu, Yifan Zhang, Yujie Xiao, Yuzhen Liang, Qi Yao, Liyang Liao, Yumeng Yang, Cheng Song, Xufeng Kou","doi":"arxiv-2409.09587","DOIUrl":"https://doi.org/arxiv-2409.09587","url":null,"abstract":"The non-uniform current distribution arisen from either current crowding\u0000effect or hot spot effect provides a method to tailor the interaction between\u0000thermal gradient and electron transport in magnetically ordered systems. Here\u0000we apply the device structural engineering to realize an in-plane inhomogeneous\u0000temperature distribution within the conduction channel, and the resulting\u0000geometric anomalous Nernst effect (GANE) gives rise to a non-zero 2nd -harmonic\u0000resistance whose polarity corresponds to the out-of-plane magnetization of\u0000Co/Pt multi-layer thin film, and its amplitude is linearly proportional to the\u0000applied current. By optimizing the aspect ratio of convex-shaped device, the\u0000effective temperature gradient can reach up to 0.3 K/$mu$m along the\u0000y-direction, leading to a GANE signal of 28.3 $mu$V. Moreover, we demonstrate\u0000electrical write and read operations in the perpendicularly-magnetized\u0000Co/Pt-based spin-orbit torque device with a simple two-terminal structure. Our\u0000results unveil a new pathway to utilize thermoelectric effects for constructing\u0000high-density magnetic memories","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142259968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Léo Hervéou, Gauthier Legrand, Thibaut Divoux, Guilhem P. Baeza
The present work emphasizes the relevance of low-field NMR relaxometry to investigate colloid-polymer hydrogels by probing water dynamics across a wide range of formulations between $rm 10^{circ}C$ and $rm 80^{circ}C$. By examining the temperature dependence of the transverse relaxation time $T_2$, we demonstrate a clear link between the NMR response and the rheological behavior of the hydrogels. In particular, we show that NMR relaxometry targeting the solvent provides reliable insights into the hydrogel microstructure and allows the detection of phase transitions and aging processes. Our findings suggest that this solvent-focused technique could greatly benefit the soft matter community, complementing other experimental methods in the study of gels.
{"title":"Understanding Polymer-Colloid Gels: A Solvent Perspective Using Low-Field NMR","authors":"Léo Hervéou, Gauthier Legrand, Thibaut Divoux, Guilhem P. Baeza","doi":"arxiv-2409.09864","DOIUrl":"https://doi.org/arxiv-2409.09864","url":null,"abstract":"The present work emphasizes the relevance of low-field NMR relaxometry to\u0000investigate colloid-polymer hydrogels by probing water dynamics across a wide\u0000range of formulations between $rm 10^{circ}C$ and $rm 80^{circ}C$. By\u0000examining the temperature dependence of the transverse relaxation time $T_2$,\u0000we demonstrate a clear link between the NMR response and the rheological\u0000behavior of the hydrogels. In particular, we show that NMR relaxometry\u0000targeting the solvent provides reliable insights into the hydrogel\u0000microstructure and allows the detection of phase transitions and aging\u0000processes. Our findings suggest that this solvent-focused technique could\u0000greatly benefit the soft matter community, complementing other experimental\u0000methods in the study of gels.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142259966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Memristors have been positioned at the forefront of the purposes for carrying out neuromorphic computation. Their tuneable conductivity properties enable the imitation of synaptic behaviour. Multipore nanofluidic memristors have shown their memristic properties and are candidate devices for liquid neuromorphic systems. Such properties are visible through an inductive hysteresis in the current-voltage sweeps, which is then confirmed by the inductive characteristics in impedance spectroscopy measurements. The dynamic behaviour of memristors is largely determined by a voltage-dependent relaxation time. Here, we obtain the kinetic relaxation time of a multipore nanofluidic memristor via its impedance spectra. We show that the behaviour of this characteristic of memristors is comparable to that of natural neural systems. Hence, we open a way to study the mimic of neuron characteristics by searching for memristors with the same kinetic times.
{"title":"Relaxation Time of Multipore Nanofluidic Memristors for Neuromorphic Applications","authors":"Agustin Bou, Patricio Ramirez, Juan Bisquert","doi":"arxiv-2409.09327","DOIUrl":"https://doi.org/arxiv-2409.09327","url":null,"abstract":"Memristors have been positioned at the forefront of the purposes for carrying\u0000out neuromorphic computation. Their tuneable conductivity properties enable the\u0000imitation of synaptic behaviour. Multipore nanofluidic memristors have shown\u0000their memristic properties and are candidate devices for liquid neuromorphic\u0000systems. Such properties are visible through an inductive hysteresis in the\u0000current-voltage sweeps, which is then confirmed by the inductive\u0000characteristics in impedance spectroscopy measurements. The dynamic behaviour\u0000of memristors is largely determined by a voltage-dependent relaxation time.\u0000Here, we obtain the kinetic relaxation time of a multipore nanofluidic\u0000memristor via its impedance spectra. We show that the behaviour of this\u0000characteristic of memristors is comparable to that of natural neural systems.\u0000Hence, we open a way to study the mimic of neuron characteristics by searching\u0000for memristors with the same kinetic times.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142259960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Agustin Bou, Cedric Gonzales, Pablo P. Boix, Antonio Guerrero, Juan Bisquert
Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance equation containing a state variable that imparts a memory effect. The current-voltage cycling causes transitions of the conductance, determined by different physical mechanisms such as the formation of conducting filaments in an insulating surrounding. Here we provide a unified description of the set and reset processes, by means of a single voltage activated relaxation time of the memory variable. This approach is based on the Hodgkin-Huxley model that is widely used to describe action potentials dynamics in neurons. We focus on halide perovskite memristors and their intersection with neuroscience-inspired computing. We show that the modelling approach adeptly replicates the experimental traits of both volatile and nonvolatile memristors. Its versatility extends across various device materials and configurations, capturing nuanced behaviors such as scan rate- and upper vertex-dependence. The model also describes well the response to sequences of voltage pulses that cause synaptic potentiation effects. This model serves as a potent tool for comprehending and probing the underlying mechanisms of memristors, by indicating the relaxation properties that control observable response, which opens the way for a detailed physical interpretation.
{"title":"A biology-inspired model for the electrical response of solid state memristors","authors":"Agustin Bou, Cedric Gonzales, Pablo P. Boix, Antonio Guerrero, Juan Bisquert","doi":"arxiv-2409.09307","DOIUrl":"https://doi.org/arxiv-2409.09307","url":null,"abstract":"Memristors stand out as promising components in the landscape of memory and\u0000computing. Memristors are generally defined by a conductance equation\u0000containing a state variable that imparts a memory effect. The current-voltage\u0000cycling causes transitions of the conductance, determined by different physical\u0000mechanisms such as the formation of conducting filaments in an insulating\u0000surrounding. Here we provide a unified description of the set and reset\u0000processes, by means of a single voltage activated relaxation time of the memory\u0000variable. This approach is based on the Hodgkin-Huxley model that is widely\u0000used to describe action potentials dynamics in neurons. We focus on halide\u0000perovskite memristors and their intersection with neuroscience-inspired\u0000computing. We show that the modelling approach adeptly replicates the\u0000experimental traits of both volatile and nonvolatile memristors. Its\u0000versatility extends across various device materials and configurations,\u0000capturing nuanced behaviors such as scan rate- and upper vertex-dependence. The\u0000model also describes well the response to sequences of voltage pulses that\u0000cause synaptic potentiation effects. This model serves as a potent tool for\u0000comprehending and probing the underlying mechanisms of memristors, by\u0000indicating the relaxation properties that control observable response, which\u0000opens the way for a detailed physical interpretation.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142259961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Steven Louis, Hannah Bradley, Cody Trevillian, Andrei Slavin, Vasyl Tyberkevych
This paper proposes a novel spiking artificial neuron design based on a combined spin valve/magnetic tunnel junction (SV/MTJ). Traditional hardware used in artificial intelligence and machine learning faces significant challenges related to high power consumption and scalability. To address these challenges, spintronic neurons, which can mimic biologically inspired neural behaviors, offer a promising solution. We present a model of an SV/MTJ-based neuron which uses technologies that have been successfully integrated with CMOS in commercially available applications. The operational dynamics of the neuron are derived analytically through the Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation, demonstrating its ability to replicate key spiking characteristics of biological neurons, such as response latency and refractive behavior. Simulation results indicate that the proposed neuron design can operate on a timescale of about 1 ns, without any bias current, and with power consumption as low as 50 uW.
{"title":"Spintronic Neuron Using a Magnetic Tunnel Junction for Low-Power Neuromorphic Computing","authors":"Steven Louis, Hannah Bradley, Cody Trevillian, Andrei Slavin, Vasyl Tyberkevych","doi":"arxiv-2409.09268","DOIUrl":"https://doi.org/arxiv-2409.09268","url":null,"abstract":"This paper proposes a novel spiking artificial neuron design based on a\u0000combined spin valve/magnetic tunnel junction (SV/MTJ). Traditional hardware\u0000used in artificial intelligence and machine learning faces significant\u0000challenges related to high power consumption and scalability. To address these\u0000challenges, spintronic neurons, which can mimic biologically inspired neural\u0000behaviors, offer a promising solution. We present a model of an SV/MTJ-based\u0000neuron which uses technologies that have been successfully integrated with CMOS\u0000in commercially available applications. The operational dynamics of the neuron\u0000are derived analytically through the Landau-Lifshitz-Gilbert-Slonczewski (LLGS)\u0000equation, demonstrating its ability to replicate key spiking characteristics of\u0000biological neurons, such as response latency and refractive behavior.\u0000Simulation results indicate that the proposed neuron design can operate on a\u0000timescale of about 1 ns, without any bias current, and with power consumption\u0000as low as 50 uW.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142259962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Suk Hyun Kim, Kyeong Ho Park, Young Gie Lee, Seong Jun Kang, Yongsup Park, Young Duck Kim
Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultra-violet optoelectronics. This is primarily due to its remarkable physical properties and ultrawide bandgap (close to 6 eV, and even larger in some cases) properties. Color centers in hBN refer to intrinsic vacancies and extrinsic impurities within the 2D crystal lattice, which result in distinct optical properties in the ultraviolet (UV) to near-infrared (IR) range. Furthermore, each color center in hBN exhibits a unique emission spectrum and possesses various spin properties. These characteristics open up possibilities for the development of next-generation optoelectronics and quantum information applications, including room-temperature single-photon sources and quantum sensors. Here, we provide a comprehensive overview of the atomic configuration, optical and quantum properties, and different techniques employed for the formation of color centers in hBN. A deep understanding of color centers in hBN allows for advances in the development of next-generation UV optoelectronic applications, solid-state quantum technologies, and nanophotonics by harnessing the exceptional capabilities offered by hBN color centers.
{"title":"Color Centers in Hexagonal Boron Nitride","authors":"Suk Hyun Kim, Kyeong Ho Park, Young Gie Lee, Seong Jun Kang, Yongsup Park, Young Duck Kim","doi":"arxiv-2409.08460","DOIUrl":"https://doi.org/arxiv-2409.08460","url":null,"abstract":"Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has\u0000emerged as an essential material for the encapsulation layer in van der Waals\u0000heterostructures and efficient deep ultra-violet optoelectronics. This is\u0000primarily due to its remarkable physical properties and ultrawide bandgap\u0000(close to 6 eV, and even larger in some cases) properties. Color centers in hBN\u0000refer to intrinsic vacancies and extrinsic impurities within the 2D crystal\u0000lattice, which result in distinct optical properties in the ultraviolet (UV) to\u0000near-infrared (IR) range. Furthermore, each color center in hBN exhibits a\u0000unique emission spectrum and possesses various spin properties. These\u0000characteristics open up possibilities for the development of next-generation\u0000optoelectronics and quantum information applications, including\u0000room-temperature single-photon sources and quantum sensors. Here, we provide a\u0000comprehensive overview of the atomic configuration, optical and quantum\u0000properties, and different techniques employed for the formation of color\u0000centers in hBN. A deep understanding of color centers in hBN allows for\u0000advances in the development of next-generation UV optoelectronic applications,\u0000solid-state quantum technologies, and nanophotonics by harnessing the\u0000exceptional capabilities offered by hBN color centers.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142259970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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