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Manipulating moires by controlling heterostrain in van der Waals devices 通过控制范德瓦尔斯器件中的异应变操纵摩尔纹
Pub Date : 2024-09-11 DOI: arxiv-2409.07427
Ian Sequeira, Andrew Z. Barabas, Aaron H Barajas-Aguilar, Michaela G Bacani, Naoto Nakatsuji, Mikito Koshino, Takashi Taniguichi, Kenji Watanabe, Javier D. Sanchez-Yamagishi
Van der Waals (vdW) moires offer tunable superlattices that can stronglymanipulate electronic properties. We demonstrate the in-situ manipulation ofmoire superlattices via heterostrain control in a vdW device. By straining agraphene layer relative to its hexagonal boron nitride substrate, we modify theshape and size of the moire. Our sliding-based technique achieves uniaxialheterostrain values exceeding 1%, resulting in distorted moires that are largerthan those achievable without strain. The stretched moire is evident intransport measurements, resulting in shifted superlattice resistance peaks andLandau fans consistent with an enlarged superlattice unit cell. Electronicstructure calculations reveal how heterostrain shrinks and distorts the moireBrillouin zone, resulting in a reduced electronic bandwidth as well as theappearance of highly anisotropic and quasi-1-dimensional Fermi surfaces. Ourheterostrain control approach opens a wide parameter space of moire lattices toexplore beyond what is possible by twist angle control alone.
范德瓦耳(vdW)莫尔提供了可调谐的超晶格,能够强烈操纵电子特性。我们展示了通过在 vdW 器件中进行异应变控制来原位操纵膜超晶格的方法。通过使石墨烯层相对于六方氮化硼基底产生应变,我们改变了摩尔层的形状和大小。我们基于滑动技术的单轴应变值超过了 1%,从而产生了比无应变时更大的扭曲摩尔纹。拉伸的摩尔纹在传输测量中非常明显,导致超晶格电阻峰和朗道扇偏移,与扩大的超晶格单元尺寸相一致。电子结构计算揭示了异应变如何缩小和扭曲了摩尔布里渊区,导致电子带宽减小以及出现高度各向异性和准一维费米面。我们的异应变控制方法开辟了摩尔晶格的广阔参数空间,使我们可以超越仅靠扭转角控制所能实现的探索。
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引用次数: 0
Static quantum dot on a potential hilltop for generating and analyzing hot electrons in the quantum Hall regime 用于在量子霍尔机制下产生和分析热电子的电位山顶静态量子点
Pub Date : 2024-09-11 DOI: arxiv-2409.07061
Ryo Oishi, Yuto Hongu, Tokuro Hata, Chaojing Lin, Takafumi Akiho, Koji Muraki, Toshimasa Fujisawa
We propose and demonstrate a static quantum dot on a potential hilltop togenerate and analyze ballistic hot electrons along a quantum Hall edge channelwell above the chemical potential. High energy resolution associated withdiscrete energy levels is attractive for studying hot-electron dynamics.Particularly, the energy distribution function of hot electrons weakly coupledto cold electrons is investigated to reveal spectral diffusion with energyrelaxation. The analysis allows us to estimate the maximum energy exchange perscattering, which is an important parameter to describe interacting electronsin the edge channel.
我们提出并演示了一个位于化学势山顶上的静态量子点,用于产生和分析沿着化学势上方量子霍尔边通道井的弹道热电子。与离散能级相关的高能量分辨率对研究热电子动力学具有吸引力。特别是,我们研究了与冷电子弱耦合的热电子的能量分布函数,以揭示能量松弛的光谱扩散。通过分析,我们可以估算出最大能量交换散射,这是描述边缘通道中相互作用电子的一个重要参数。
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引用次数: 0
Topological Spin-Orbit Torque in Ferrimagnetic Weyl Semimetal 铁磁性韦尔半金属中的拓扑自旋轨道转矩
Pub Date : 2024-09-11 DOI: arxiv-2409.07106
Tomonari Meguro, Akihiro Ozawa, Koji Kobayashi, Yasufumi Araki, Kentaro Nomura
The spin-orbit torque (SOT) in a compensated ferrimagnetic Weyl semimetal,${rm Ti}_{2}{rm MnAl}$, is studied by the linear response theory. Weelucidate that the SOT driven by all the occupied electronic states is presentin magnetic Weyl semimetal, unlike in conventional metallic magnets. Around theenergy of the Weyl points, we find that such an SOT is dominant and almostindependent of the disorder. The emergence of the SOT in ${rm Ti}_{2}{rmMnAl}$ can be understood from the structure of the mixed Berry curvature aroundthe Weyl points, which is similar to that of the ordinary Berry curvature.
通过线性响应理论研究了补偿铁磁性韦尔半金属${rm Ti}_{2}{rm MnAl}$中的自旋轨道力矩(SOT)。我们发现,与传统金属磁体不同,磁性韦尔半金属中存在由所有占据的电子态驱动的 SOT。我们发现,在韦尔点能量附近,这种 SOT 占主导地位,几乎与无序无关。在 ${rm Ti}_{2}{rmMnAl}$中出现的 SOT 可以从韦尔点周围的混合贝里曲率的结构来理解,它与普通贝里曲率的结构相似。
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引用次数: 0
Development of an embedded-atom method potential of Ni-Mo alloys for electrocatalysis / surface compositional studies 开发用于电催化的 Ni-Mo 合金的嵌入原子法潜力/表面成分研究
Pub Date : 2024-09-11 DOI: arxiv-2409.07320
Ambesh Gupta, Chinmay Dahale, Soumyadipta Maiti, Sriram Goverapet Srinivasan, Beena Rai
Ni-Mo superalloys have emerged as materials of choice for a diverse array ofapplications owing to their superior mechanical properties, exceptionalcorrosion and oxidation resistance, electrocatalytic behavior, and surfacestability. Understanding and optimizing the surface composition of Ni-Mo alloysis critical for enhancing their performance in practical applications.Traditional experimental surface analysis techniques, while informative, areoften prohibitive in terms of cost and time. Likewise, theoretical approachessuch as first-principle calculations demand substantial computational resourcesand it is difficult to simulate large structures. This study introduces analternative approach utilizing hybrid Monte-Carlo / Molecular Dynamics (MC/MD)simulations to investigate the surface composition of Ni-Mo alloys. We reportthe development of an optimized Embedded-Atom Method (EAM) potentialspecifically for Ni-Mo alloys, carefully parameterized using empirical latticeconstants and formation energies of elemental and face-centered cubic (FCC)Ni-Mo solid solution alloys. The reliability of the EAM potential iscorroborated via the evaluation of equations of state, with a particular focuson reproducing structural properties. Utilizing this validated potential, MC/MDsimulations were performed to understand the depth-wise variations in thecompositions of Ni-Mo alloy nanoparticles and extended surfaces. Thesesimulations reveal a preferential segregation of nickel on surface, andmolybdenum in sub-surface layer. Due to this preferential segregation, it isimperative to consider surface segregation while tailoring the surfaceproperties for targeted applications.
镍-钼超合金因其优越的机械性能、出色的耐腐蚀性和抗氧化性、电催化行为和表面稳定性,已成为各种应用的首选材料。了解和优化镍钼合金的表面成分对提高其实际应用性能至关重要。传统的实验表面分析技术虽然信息量大,但成本和时间往往过高。同样,第一原理计算等理论方法也需要大量的计算资源,而且难以模拟大型结构。本研究介绍了利用蒙特卡洛/分子动力学(MC/MD)混合模拟研究镍钼合金表面成分的替代方法。我们报告了专为镍钼合金开发的优化嵌入式原子法(EAM)势,该势利用元素和面心立方(FCC)镍钼固溶体合金的经验晶格常数和形成能进行了精心参数化。通过对状态方程的评估,EAM 电位的可靠性得到了证实,重点是再现结构特性。利用这一经过验证的势,进行了 MC/MD 模拟,以了解镍钼合金纳米颗粒和扩展表面成分的深度变化。模拟结果表明,镍在表面优先偏析,而钼在次表层优先偏析。由于这种优先偏析,在为目标应用定制表面特性时,考虑表面偏析是非常重要的。
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引用次数: 0
Inner non-Hermitian skin effect on Bethe lattice 贝特晶格上的内部非赫米提皮肤效应
Pub Date : 2024-09-11 DOI: arxiv-2409.07117
Junsong Sun, Chang-An Li, Shiping Feng, Huaiming Guo
We investigate the non-Hermitian Su-Schrieffer-Heeger (SSH) model on Bethelattice, revealing a novel localization phenomenon coined inner non-Hermitianskin effect. This effect is featured by the localization of all eigenstateswithin the bulk of the lattice, diverging from the conventional skin effectobserved in general non-Hermitian systems. The analytical treatment of themodel demonstrates that the Hamiltonian can be decoupled into a series ofone-dimensional chains, with one end fixed at the bottom boundary while theother ends positioned at varying generations within the bulk. Thisconfiguration leads to the emergence of the inner non-Hermitian skin effect,which is further validated by performing circuit simulations. Our findingsprovide new insights into the interplay between non-Hermitian physics and theself-similar structure on Bethe lattice.
我们研究了 Bethelattice 上的非ermitian Su-Schrieffer-Heeger(SSH)模型,揭示了一种被称为内非ermitianskin 效应的新局部化现象。这种效应的特点是所有特征状态都在晶格主体内局部化,不同于在一般非ermitian 系统中观察到的传统趋肤效应。对该模型的分析表明,哈密顿可以解耦为一系列一维链,其中一端固定在底部边界,而另一端则位于晶格内部的不同世代。这种配置导致了内部非赫米提趋肤效应的出现,而电路仿真则进一步验证了这一点。我们的发现为非赫米提物理学与贝特晶格上的自相似结构之间的相互作用提供了新的见解。
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引用次数: 0
Plasmon-Phonon Hybridization in Doped Semiconductors from First Principles 从第一原理看掺杂半导体中的等离子体-虹霓杂化
Pub Date : 2024-09-11 DOI: arxiv-2409.07393
Jae-Mo Lihm, Cheol-Hwan Park
Although plasmons and phonons are the collective excitations that govern thelow-energy physics of doped semiconductors, their nonadiabatic hybridizationand mutual screening have not been studied from first principles. We achievethis goal by transforming the Dyson equation to the frequency-independentdynamical matrix of an equivalent damped oscillator. Calculations on doped GaAsand TiO2 agree well with available Raman data and await immediate experimentalconfirmation from infrared, neutron, electron-energy-loss, and angle-resolvedphotoemission spectroscopies.
虽然质子和声子是支配掺杂半导体低能物理的集体激发,但它们的非绝热杂化和相互屏蔽尚未从第一性原理得到研究。我们通过将戴森方程转换为与频率无关的等效阻尼振荡器动力学矩阵来实现这一目标。对掺杂砷化镓和二氧化钛的计算结果与现有的拉曼数据非常吻合,我们正等待红外、中子、电子能量损失和角度分辨照片发射光谱的直接实验证实。
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引用次数: 0
General Stacking Theory for Altermagnetism in Bilayer Systems 双层体系异磁性的一般堆积理论
Pub Date : 2024-09-11 DOI: arxiv-2409.06964
Baoru Pan, Pan Zhou, Pengbo Lyu, Huaping Xiao, Xuejuan Yang, Lizhong Sun
Two-dimensional (2D) altermagnetism was recently proposed to be attainable intwisted antiferromagnetic bilayers providing an experimentally feasibleapproach to realize it in 2D materials. Nevertheless, a comprehensiveunderstanding of the mechanism governing the appearance of altermagnetism inbilayer systems is still absent. In present letter, we address this gap byintroducing a general stacking theory (GST) as a key condition for theemergence of altermagnetism in bilayer systems. The GST providesstraightforward criteria to predict whether a bilayer demonstratesaltermagnetic spin splitting, solely based on the layer groups of the composingmonolayers. According to the GST, only seven point groups of bilayersfacilitate the emergence of altermagnetism. It is revealed that, beyond thepreviously proposed antiferromagnetic twisted vdW stacking, altermagnetism caneven emerge in bilayers formed through the symmetrically restricted directstacking of two monolayers. By combining the GST and first-principlescalculations, we present illustrative examples of bilayers demonstratingaltermagnetism. Our work establishes a robust framework for designing diversebilayer systems with altermagnetism, thereby opening up new avenues for bothfundamental research and practical applications in this field.
最近有人提出可以在扭曲的反铁磁性双层材料中实现二维(2D)变磁性,这为在二维材料中实现变磁性提供了一种实验上可行的方法。尽管如此,人们对双层体系中出现反铁磁性的机理仍缺乏全面的了解。在这封信中,我们引入了一般堆积理论(GST)作为双层体系中出现变磁性的关键条件,从而弥补了这一空白。GST 提供了直截了当的标准,仅根据组成单层的层基就能预测双分子层是否表现出异磁自旋分裂。根据 GST,只有 7 个双分子层的点组能促进变磁性的出现。研究发现,除了先前提出的反铁磁性扭曲 vdW 堆积之外,通过对称限制的两个单层直接堆积而形成的双层膜甚至也会出现反磁性。通过将 GST 与第一原理计算相结合,我们展示了双层膜显示出另一种磁性的实例。我们的工作为设计具有改变磁性的各种双层体系建立了一个稳健的框架,从而为这一领域的基础研究和实际应用开辟了新的途径。
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引用次数: 0
Berry curvature and shift vector effects at high-order wave mixing in biased bilayer graphene 偏压双层石墨烯高阶波混合时的贝里曲率和位移矢量效应
Pub Date : 2024-09-10 DOI: arxiv-2409.06269
H. K. Avetissian, H. H. Matevosyan, G. F. Mkrtchian
In this work, we present a microscopic quantum theory that elucidates thenonlinear-nonperturbative optical response of biased bilayer graphene subjectedto a bichromatic strong laser fields. This response is analyzed using afour-band Hamiltonian derived from ab-initio calculations. For thelaser-stimulated dynamics, we employ structure gauge-invariant evolutionaryequations to accurately describe the evolution of the single-particle densitymatrix across the entire Brillouin zone. The resonant generation ofelectron-hole pairs by the high-frequency component of the field, combined withthe induction of high-order harmonic generation (HHG) and high-order wavemixing (HWM) by the strong low-frequency field component, leads to significantalterations in the HWM and HHG spectra. These changes are driven by the effectsof Berry curvature and the shift vector, which modify the relativecontributions of interband and intraband channels, thereby fundamentallyreshaping the radiation spectra at high-order frequency multiplication.
在这项研究中,我们提出了一种微观量子理论,阐明了偏压双层石墨烯在双色强激光场作用下的非线性非微扰光学响应。这种响应是通过非线性计算得到的四带哈密顿来分析的。对于激光刺激的动力学,我们采用了结构规整不变的演化方程来精确描述整个布里渊区的单粒子密度矩阵的演化。高频场分量共振产生的电子-空穴对,加上强低频场分量诱导产生的高阶谐波(HHG)和高阶混波(HWM),导致 HWM 和 HHG 光谱发生显著变化。这些变化是由贝里曲率和位移矢量的影响驱动的,它们改变了带间和带内信道的相对贡献,从而从根本上重塑了高阶频率倍增时的辐射光谱。
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引用次数: 0
Periodic source of energy-entangled electrons in helical states coupled to a BCS superconductor 与 BCS 超导体耦合的螺旋态能量纠缠电子的周期源
Pub Date : 2024-09-10 DOI: arxiv-2409.06591
Flavio Ronetti, Bruno Bertin-Johannet, Jérôme Rech, Thibaut Jonckheere, Benoît Grémaud, Laurent Raymond, Thierry Martin
We propose a source of purely electronic energy-entangled states implementedin a solid-state system with potential applications in quantum informationprotocols based on electron flying qubits. The proposed device relies on thestandard tools of Electron Quantum Optics (EQO) and exploits entanglement ofthe Cooper pairs of a BCS superconductor. The latter is coupled via anadjustable quantum point contact to two opposite spin polarized electronwave-guides, which are driven by trains of Lorentzian pulses. This specificchoice for the drive is crucial to inject purely electronic entangled-statesdevoid of spurious electron-hole pairs. In the Andreev regime, a perturbativecalculation in the tunnel coupling confirms that entangled electrons states(EES) are generated at the output of the normal side. We introduce a quantityrelated to charge current cross-correlations which allows one to verifyexperimentally the entangled nature of the emitted state.
我们提出了一种在固态系统中实现的纯电子能量纠缠态源,有望应用于基于电子飞行量子比特的量子信息协议。所提议的设备依赖于电子量子光学(EQO)的标准工具,并利用了 BCS 超导体库珀对的纠缠。后者通过一个可调节的量子点接触耦合到两个相反的自旋极化电子波导上,由洛伦兹脉冲串驱动。这种特定的驱动选择对于注入纯电子纠缠态而避免产生虚假的电子-空穴对至关重要。在安德烈耶夫机制中,隧道耦合的微扰计算证实,纠缠电子态(EES)是在正常侧的输出端产生的。我们引入了一个与电荷电流交叉相关的量,它允许我们通过实验验证发射状态的纠缠性质。
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引用次数: 0
Giant anisotropic anomalous Hall effect in antiferromagnetic topological metal NdGaSi 反铁磁拓扑金属 NdGaSi 中的巨型各向异性反常霍尔效应
Pub Date : 2024-09-10 DOI: arxiv-2409.06250
Anyesh Saraswati, Sudipta Chatterjee, Nitesh Kumar
The interplay between magnetism and strong electron correlation in magneticmaterials discerns a variety of intriguing topological features. Here, wereport a systematic investigation of the magnetic, thermodynamic, andelectrical transport properties in NdGaSi single crystals. The magneticmeasurements reveal a magnetic ordering below T_N (11 K), with spins aligningantiferromagnetically in-plane, and it orders ferromagnetically (FM)out-of-plane. The longitudinal resistivity data and heat capacity exhibit asignificant anomaly as a consequence of the magnetic ordering at TN. Themagnetoresistance study shows significantly different behavior when measuredalong either direction, resulting from the complex nature of the magneticstructure, stemming from complete saturation of moments in one direction andsubsequent spin flop transitions in the other. Remarkably, we have also noticedan unusual anisotropic anomalous Hall response. We have observed a giantanomalous Hall conductivity (AHC) of 1730 ohm-1 cm-1 and 490 ohm-1 cm-1 at 2 K,with B // [001] and B // [100], respectively. Our scaling analysis of AHCreveals that the anomalous Hall effect in the studied compound is dominated bythe Berry phase-driven intrinsic mechanism. These astonishing findings inNdGaSi open up new possibilities for antiferromagnetic spintronics inrare-earth-based intermetallic compounds.
磁性材料中的磁性和强电子相关性之间的相互作用产生了各种有趣的拓扑特征。在此,我们对掺镓硅单晶的磁性、热力学和电传输特性进行了系统研究。磁性测量揭示了低于 T_N(11 K)的磁有序性,自旋在平面内与铁磁性(FM)排列,在平面外与铁磁性(FM)排列。纵向电阻率数据和热容量因 TN 处的磁有序而显示出明显的异常。磁阻研究表明,沿任一方向测量时都会出现明显不同的行为,这是由于磁性结构的复杂性造成的,其中一个方向的磁矩完全饱和,而另一个方向的磁矩则随之发生自旋翻转。值得注意的是,我们还注意到一种不寻常的各向异性反常霍尔响应。我们观察到,在 2 K 时,B//[001] 和 B //[100] 的巨反常霍尔电导率(AHC)分别为 1730 欧姆-1 厘米-1 和 490 欧姆-1 厘米-1。我们对 AHC 的比例分析表明,所研究化合物中的反常霍尔效应是由贝里相驱动的内在机制主导的。钕镓硅中的这些惊人发现为稀土基金属间化合物中的反铁磁自旋电子学开辟了新的可能性。
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引用次数: 0
期刊
arXiv - PHYS - Mesoscale and Nanoscale Physics
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