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Electric readout of the Néel vector in an altermagnet 变磁铁中内尔矢量的电读数
Pub Date : 2024-09-16 DOI: arxiv-2409.10088
Xian-Peng Zhang, Xiaolong Fan, Xiangrong Wang, Yugui Yao
In the field of antiferromagnetic spintronics, the significant change inelectrical resistance with the switching of the N'eel vector of anantiferromagnet plays a crucial role in electrically-readable antiferromagneticmemory with opposite N'eel vectors as binary "0" and "1". Here, we develop acomprehensive microscopic theory to explore the diverse magnetoresistanceeffects in an altermagnet. The theory demonstrates an eye-catchingantiferromagnetic anisotropic magnetoresistance, i.e., the change inmagnetoresistance with the orientation of the N'eel vector rather than netmagnetization, which is bound to become one of the most significant phenomenain spintronics. Furthermore, the interplay between the spin Hall effect andanisotropic spin splitting effect leads to a substantial electrical resistancelinear to the magnetic field-controllable N'eel vector of the altermagnet akinto the giant magnetoresistance in ferromagnetic materials and therefore iscrucial for an electrically readable antiferromagnetic memory. Our microscopictheory contributes to a deeper understanding of the fundamental physicsunderlying antiferromagnetic spintronics and provides valuable insights fordesigning novel electronic devices involving altermagnets.
在反铁磁自旋电子学领域,随着反铁磁体的磁矢量(N'eel vector)的切换,电阻的显著变化在电可读反铁磁存储器中起着至关重要的作用,这种存储器的磁矢量(N'eel vectors)与二进制 "0 "和 "1 "相反。在这里,我们建立了一个全面的微观理论来探索反铁磁体中的各种磁阻效应。该理论展示了一种引人注目的铁磁性各向异性磁阻,即磁阻随着自旋矢量的取向而变化,而不是净磁化,这必将成为自旋电子学中最重要的现象之一。此外,自旋霍尔效应和各向异性的自旋分裂效应之间的相互作用,会导致与反铁磁体的磁场可控 "鳗鱼 "矢量方向相关的巨大电阻,类似于铁磁材料中的巨磁电阻,因此对于电可读反铁磁存储器至关重要。我们的微观理论有助于加深对反铁磁自旋电子学基础物理学的理解,并为设计涉及反磁体的新型电子器件提供了宝贵的见解。
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引用次数: 0
Cavity-Enhanced Optical Manipulation of Antiferromagnetic Magnon-Pairs 反铁磁磁子对的腔增强光学操纵
Pub Date : 2024-09-16 DOI: arxiv-2409.10659
Tahereh Sadat Parvini, Anna-Luisa E. Romling, Sanchar Sharma, Silvia Viola Kusminskiy
The optical manipulation of magnon states in antiferromagnets (AFMs) holdssignificant potential for advancing AFM-based computing devices. In particular,two-magnon Raman scattering processes are known to generate entangledmagnon-pairs with opposite momenta. We propose to harness the dynamicalbackaction of a driven optical cavity coupled to these processes, to obtainsteady states of squeezed magnon-pairs, represented by squeezed Perelomovcoherent states. The system's dynamics can be controlled by the strength anddetuning of the optical drive and by the cavity losses. In the limit of a fast(or lossy) cavity, we obtain an effective equation of motion in the Perelomovrepresentation, in terms of a light-induced frequency shift and a collectiveinduced dissipation which sign can be controlled by the detuning of the drive.In the red-detuned regime, a critical power threshold defines a region wheremagnon-pair operators exhibit squeezing, a resource for quantum information,marked by distinct attractor points. Beyond this threshold, the system evolvesto limit cycles of magnon-pairs. In contrast, for resonant and blue detuningregimes, the magnon-pair dynamics exhibit limit cycles and chaotic phases,respectively, for low and high pump powers. Observing strongly squeezed states,auto-oscillating limit cycles, and chaos in this platform presents promisingopportunities for future quantum information processing, communicationdevelopments, and materials studies.
对反铁磁体(AFMs)中的磁子态进行光学操纵,对于推进基于 AFM 的计算设备具有重大潜力。特别是,已知双磁子拉曼散射过程会产生具有相反力矩的纠缠磁子对。我们建议利用与这些过程耦合的驱动光腔的动态反作用,获得以挤压佩列洛莫夫相干态为代表的挤压磁子对的稳态。系统的动态可由光驱动的强度和调谐以及腔损耗来控制。在快速(或有损耗)腔体的限制下,我们得到了一个有效的佩列洛莫夫运动方程,即光诱导的频移和集体诱导的耗散,其符号可由驱动器的失谐来控制。在红色失谐体系中,临界功率阈值定义了一个磁对算子表现出挤压的区域,这是量子信息的一种资源,以不同的吸引点为标志。超过这个临界点,系统就会演化成磁子对的极限循环。相反,在共振和蓝色失谐状态下,磁子对动力学在低泵功率和高泵功率时分别表现出极限循环和混沌阶段。在该平台中观察到强挤压态、自动振荡极限循环和混沌,为未来的量子信息处理、通信开发和材料研究提供了大有可为的机会。
{"title":"Cavity-Enhanced Optical Manipulation of Antiferromagnetic Magnon-Pairs","authors":"Tahereh Sadat Parvini, Anna-Luisa E. Romling, Sanchar Sharma, Silvia Viola Kusminskiy","doi":"arxiv-2409.10659","DOIUrl":"https://doi.org/arxiv-2409.10659","url":null,"abstract":"The optical manipulation of magnon states in antiferromagnets (AFMs) holds\u0000significant potential for advancing AFM-based computing devices. In particular,\u0000two-magnon Raman scattering processes are known to generate entangled\u0000magnon-pairs with opposite momenta. We propose to harness the dynamical\u0000backaction of a driven optical cavity coupled to these processes, to obtain\u0000steady states of squeezed magnon-pairs, represented by squeezed Perelomov\u0000coherent states. The system's dynamics can be controlled by the strength and\u0000detuning of the optical drive and by the cavity losses. In the limit of a fast\u0000(or lossy) cavity, we obtain an effective equation of motion in the Perelomov\u0000representation, in terms of a light-induced frequency shift and a collective\u0000induced dissipation which sign can be controlled by the detuning of the drive.\u0000In the red-detuned regime, a critical power threshold defines a region where\u0000magnon-pair operators exhibit squeezing, a resource for quantum information,\u0000marked by distinct attractor points. Beyond this threshold, the system evolves\u0000to limit cycles of magnon-pairs. In contrast, for resonant and blue detuning\u0000regimes, the magnon-pair dynamics exhibit limit cycles and chaotic phases,\u0000respectively, for low and high pump powers. Observing strongly squeezed states,\u0000auto-oscillating limit cycles, and chaos in this platform presents promising\u0000opportunities for future quantum information processing, communication\u0000developments, and materials studies.","PeriodicalId":501137,"journal":{"name":"arXiv - PHYS - Mesoscale and Nanoscale Physics","volume":"106 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142269066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bloch oscillations of Fibonacci anyons 斐波那契任子的布洛赫振荡
Pub Date : 2024-09-16 DOI: arxiv-2409.09922
Xiaoqi Zhou, Weixuan Zhang, Hao Yuan, Xiangdong Zhang
Non-Abelian anyons, which correspond to collective excitations possessingmultiple fusion channels and noncommuting braiding statistics, serve as thefundamental constituents for topological quantum computation. Here, we revealthe exotic Bloch oscillations (BOs) induced by non-Abelian fusion of Fibonaccianyons. It is shown that the interplay between fusion-dependent internal energylevels and external forces can induce BOs and Bloch-Zener oscillations (BZOs)of coupled fusion degrees with varying periods. In this case, the golden ratioof the fusion matrix can be determined by the period of BOs or BZOs inconjunction with external forces, giving rise to an effective way to unravelnon-Abelian fusion. Furthermore, we experimentally simulate nonAbelian fusionBOs by mapping Schrodinger equation of two Fibonacci anyons onto dynamicalequation of electric circuits. Through the measurement of impedance spectra andvoltage evolution, both fusion-dependent BZOs and BOs are simulated. Ourfindings establish a connection between BOs and non-Abelian fusion, providing aversatile platform for simulating numerous intriguing phenomena associated withnon-Abelian physics.
非阿贝尔任子对应于具有多个融合通道和非交换编织统计量的集体激发,是拓扑量子计算的基本成分。在这里,我们揭示了由斐波那契子的非阿贝尔融合诱发的奇异布洛赫振荡(BOs)。研究表明,与聚变相关的内部能级和外力之间的相互作用可以诱发不同周期的布洛赫振荡和耦合聚变度的布洛赫-齐纳振荡(BZOs)。在这种情况下,核聚变矩阵的黄金比率可以由BOs或BZOs与外力作用的周期来决定,从而提供了一种解除非阿贝尔核聚变的有效方法。此外,我们还通过将两个斐波那契任子的薛定谔方程映射到电路的动力学方程上,在实验中模拟了非阿贝尔聚变BO。通过测量阻抗谱和电压演化,我们模拟了依赖聚变的 BZO 和 BO。我们的发现建立了 BO 与非阿贝尔聚变之间的联系,为模拟与非阿贝尔物理学相关的众多有趣现象提供了一个通用平台。
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引用次数: 0
Intrinsic Dynamic Generation of Spin Polarization by Time-Varying Electric Field 时变电场动态产生自旋极化的内在机制
Pub Date : 2024-09-15 DOI: arxiv-2409.09669
Xukun Feng, Jin Cao, Zhi-Fan Zhang, Lay Kee Ang, Shen Lai, Hua Jiang, Cong Xiao, Shengyuan A. Yang
Electric control of spin in insulators is desired for low-consumption andultrafast spintronics, but the underlying mechanism remains largely unexplored.Here, we propose an intrinsic effect of dynamic spin generation driven bytime-varying electric field. In the intraband response regime, it can be nicelyformulated as a Berry curvature effect and leads to two phenomena that areforbidden in the $dc$ limit: linear spin generation in nonmagnetic insulatorsand intrinsic N{'e}el spin-orbit torque in $mathcal{PT}$-symmetricantiferromagnetic insulators. These phenomena are driven by the time derivativeof field rather than the field itself, and have a quantum origin in thefirst-order dynamic anomalous spin polarizability. Combined withfirst-principles calculations, we predict sizable effects driven by terahertzfield in nonmagnetic monolayer Bi and in antiferromagnetic even-layerMnBi$_2$Te$_4$, which can be detected in experiment.
绝缘体中的自旋电控制是低消耗和超快自旋电子学所需要的,但其基本机制在很大程度上仍未被探索。在这里,我们提出了一种由时变电场驱动的动态自旋生成的内在效应。在带内响应机制中,它可以被很好地表述为贝里曲率效应,并导致两种在$dc$极限中被禁止的现象:非磁性绝缘体中的线性自旋生成和$mathcal{PT}$对称非磁性绝缘体中的本征N{'e}el自旋轨道力矩。这些现象是由场的时间导数而不是场本身驱动的,并且在一阶动态反常自旋极化性中具有量子起源。结合第一性原理计算,我们预测了在非磁性单层铋和反铁磁性偶层锰铋_2_Te_4$中由太赫兹场驱动的可观效应,这些效应可以在实验中检测到。
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引用次数: 0
Selective Switching Between Two Band-Edge Alignments in Ternary Pentagonal CdSeTe Monolayer: Atom-Valley Locking 三元五边形碲化镉单层中两种带边排列的选择性切换:原子沟谷锁定
Pub Date : 2024-09-15 DOI: arxiv-2409.09625
Zhi-Qiang Wen, Qiu Yang, Shu-Hao Cao, Zhao-Yi Zeng, Hua-Yun Geng, Xiang-Rong Chen
In the field of photocatalytic water splitting, no current studies haveexplicitly investigated the coexistence of multiple band-edge alignments intwo-dimensional (2D) materials with intrinsic electric fields. In this Letter,we designed the ternary pentagonal CdSeTe monolayer, and proposed a novelconcept called atom-valley locking, which could provide multiple band-edgepositions. In the CdSeTe monolayer, two distinct valleys emerge in theelectronic structure, one contributed by Se atoms and the other by Te atoms,with a spontaneous polarization of 187 meV between them. This phenomenon can beattributed to the localization of valley electrons and the breaking offour-fold rotational reflection symmetry, yet it does not rely on the breakingof time-reversal symmetry. Due to the atom-dependent valley distribution, twotypes of band-edge alignments can be identified. Moreover, selective switchingbetween them can be achieved by strain engineering, thereby enabling precisecontrol over the site of the hydrogen evolution reaction. Our findings open upnew opportunities for exploring valley polarization and provide unique insightsinto the photocatalytic applications of 2D materials with intrinsic electricfields.
在光催化水分离领域,目前还没有研究明确探讨过二维(2D)材料在固有电场作用下多种带边排列共存的问题。在这封信中,我们设计了三元五边形碲化镉(CdSeTe)单层,并提出了一种称为 "原子谷锁定"(atom-valley locking)的新概念,它可以提供多个带边排列。在 CdSeTe 单层中,电子结构中出现了两个不同的谷,一个由 Se 原子产生,另一个由 Te 原子产生,它们之间的自发极化为 187 meV。这一现象可归因于谷电子的局域化和折叠旋转反射对称性的破坏,但它并不依赖于时间反转对称性的破坏。由于谷电子分布与原子有关,因此可以识别出两种带边排列方式。此外,还可以通过应变工程实现它们之间的选择性切换,从而实现对氢进化反应场所的精确控制。我们的发现为探索谷极化开辟了新的机遇,并为具有内在电场的二维材料的光催化应用提供了独特的见解。
{"title":"Selective Switching Between Two Band-Edge Alignments in Ternary Pentagonal CdSeTe Monolayer: Atom-Valley Locking","authors":"Zhi-Qiang Wen, Qiu Yang, Shu-Hao Cao, Zhao-Yi Zeng, Hua-Yun Geng, Xiang-Rong Chen","doi":"arxiv-2409.09625","DOIUrl":"https://doi.org/arxiv-2409.09625","url":null,"abstract":"In the field of photocatalytic water splitting, no current studies have\u0000explicitly investigated the coexistence of multiple band-edge alignments in\u0000two-dimensional (2D) materials with intrinsic electric fields. In this Letter,\u0000we designed the ternary pentagonal CdSeTe monolayer, and proposed a novel\u0000concept called atom-valley locking, which could provide multiple band-edge\u0000positions. In the CdSeTe monolayer, two distinct valleys emerge in the\u0000electronic structure, one contributed by Se atoms and the other by Te atoms,\u0000with a spontaneous polarization of 187 meV between them. This phenomenon can be\u0000attributed to the localization of valley electrons and the breaking of\u0000four-fold rotational reflection symmetry, yet it does not rely on the breaking\u0000of time-reversal symmetry. Due to the atom-dependent valley distribution, two\u0000types of band-edge alignments can be identified. Moreover, selective switching\u0000between them can be achieved by strain engineering, thereby enabling precise\u0000control over the site of the hydrogen evolution reaction. Our findings open up\u0000new opportunities for exploring valley polarization and provide unique insights\u0000into the photocatalytic applications of 2D materials with intrinsic electric\u0000fields.","PeriodicalId":501137,"journal":{"name":"arXiv - PHYS - Mesoscale and Nanoscale Physics","volume":"14 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142253604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Topological Nodal Chains and Transverse Transports in Ferromagnetic Centrosymmetric Semimetal FeIn2S4 铁磁性中心对称半金属 FeIn2S4 中的拓扑节点链和横向传输
Pub Date : 2024-09-15 DOI: arxiv-2409.09712
Junyan Liu, Yibo Wang, Xuebin Dong, Jinying Yang, Shen Zhang, Meng Lyu, Binbin Wang, Hongxiang Wei, Shouguo Wang, Enke Liu, Baogen Shen
Nodal chain semimetals protected by nonsymmorphic symmetries are distinctfrom Dirac and Weyl semimetals, featuring unconventional topological surfacestates and resulting in anomalous magnetotransport properties. Here, we revealthat the ferromagnetic FeIn2S4 is a suitable nodal chain candidate in theory.Centrosymmetric FeIn2S4 with nonsymmorphic symmetries shows half-metallicityand clean band-crossings with hourglass-type dispersion tracing out nodallines. Owing to glide mirror symmetries, the nontrivial nodal loops form nodalchain, which is associated with the perpendicular glide mirror planes. Thesenodal chains are robust against spin-orbital interaction, giving rise to thecoexistence of drumhead-type surface states and closed surface Fermi arcs.Moreover, the nodal loops protected by nonsymmorphic symmetry contribute tolarge anomalous Hall conductivity and the anomalous Nernst conductivity. Ourresults provide a platform to explore the intriguing topological state andtransverse transport properties in magnetic system.
受非非晶对称性保护的节点链半金属不同于狄拉克半金属和韦尔半金属,它们具有非常规的拓扑表面状态,并导致反常的磁传输特性。具有非非晶态对称性的中心对称 FeIn2S4 显示出半金属性和干净的带交叉,并以沙漏型色散追踪出节点线。由于滑动镜对称性,非三维结环形成结环链,结环链与垂直的滑动镜平面相关联。此外,受非非晶对称性保护的节点环有助于提高反常霍尔电导率和反常诺尔电导率。我们的研究结果为探索磁性系统中有趣的拓扑态和反向传输特性提供了一个平台。
{"title":"Topological Nodal Chains and Transverse Transports in Ferromagnetic Centrosymmetric Semimetal FeIn2S4","authors":"Junyan Liu, Yibo Wang, Xuebin Dong, Jinying Yang, Shen Zhang, Meng Lyu, Binbin Wang, Hongxiang Wei, Shouguo Wang, Enke Liu, Baogen Shen","doi":"arxiv-2409.09712","DOIUrl":"https://doi.org/arxiv-2409.09712","url":null,"abstract":"Nodal chain semimetals protected by nonsymmorphic symmetries are distinct\u0000from Dirac and Weyl semimetals, featuring unconventional topological surface\u0000states and resulting in anomalous magnetotransport properties. Here, we reveal\u0000that the ferromagnetic FeIn2S4 is a suitable nodal chain candidate in theory.\u0000Centrosymmetric FeIn2S4 with nonsymmorphic symmetries shows half-metallicity\u0000and clean band-crossings with hourglass-type dispersion tracing out nodal\u0000lines. Owing to glide mirror symmetries, the nontrivial nodal loops form nodal\u0000chain, which is associated with the perpendicular glide mirror planes. These\u0000nodal chains are robust against spin-orbital interaction, giving rise to the\u0000coexistence of drumhead-type surface states and closed surface Fermi arcs.\u0000Moreover, the nodal loops protected by nonsymmorphic symmetry contribute to\u0000large anomalous Hall conductivity and the anomalous Nernst conductivity. Our\u0000results provide a platform to explore the intriguing topological state and\u0000transverse transport properties in magnetic system.","PeriodicalId":501137,"journal":{"name":"arXiv - PHYS - Mesoscale and Nanoscale Physics","volume":"19 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142253603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Giant light emission enhancement in strain-engineered InSe/MS$_2$ (M=Mo,W) van der Waals heterostructures 应变工程 InSe/MS$_2$(M=Mo,W)范德华异质结构中的巨型光发射增强效应
Pub Date : 2024-09-15 DOI: arxiv-2409.09799
Elena Blundo, Marzia Cuccu, Federico Tuzi, Michele Re Fiorentin, Giorgio Pettinari, Atanu Patra, Salvatore Cianci, Zakhar Kudrynskyi, Marco Felici, Takashi Taniguchi, Kenji Watanabe, Amalia Patanè, Maurizia Palummo, Antonio Polimeni
Two-dimensional crystals stack together through weak van der Waals (vdW)forces, offering unlimited possibilities to play with layer number, order andtwist angle in vdW heterostructures (HSs). The realisation of high-performanceoptoelectronic devices, however, requires the achievement of specific bandalignments, $k$-space matching between conduction band minima and valence bandmaxima, as well as efficient charge transfer between the constituent layers.Fine tuning mechanisms to design ideal HSs are lacking. Here, we show thatlayer-selective strain engineering can be exploited as an extra degree offreedom in vdW HSs to tailor their band alignment and optical properties. Tothat end, strain is selectively applied to MS$_2$ (M=Mo,W) monolayers inInSe/MS$_2$ HSs. This triggers a giant PL enhancement of the highly tuneablebut weakly emitting InSe by one to three orders of magnitude. Resonant PLexcitation measurements, supported by first-principle calculations, provideevidence of a strain-activated direct charge transfer from the MS$_2$ MLstoward InSe. This significant emission enhancement achieved for InSe widens itsrange of applications for optoelectronics.
二维晶体通过微弱的范德华力(vdW)堆叠在一起,为在vdW异质结构(HS)中利用层数、阶次和扭曲角度提供了无限可能。然而,要实现高性能光电器件,需要实现特定的带排列、导带最小值和价带最大值之间的k$空间匹配,以及组成层之间有效的电荷转移。在这里,我们展示了在 vdW HS 中可以利用层选择性应变工程作为额外的自由度来定制它们的能带排列和光学特性。为此,我们选择性地将应变施加到 InSe/MS$_2$ HS 中的 MS$_2$ (M=Mo,W)单层上。这引发了高度可调但发射微弱的 InSe 的巨大 PL 增强,增强幅度达到一到三个数量级。在第一原理计算的支持下,共振聚光激发测量提供了应变激活直接电荷转移从 MS$_2$ ML 向 InSe 转移的证据。InSe 的这种显著的发射增强拓宽了其在光电子学方面的应用范围。
{"title":"Giant light emission enhancement in strain-engineered InSe/MS$_2$ (M=Mo,W) van der Waals heterostructures","authors":"Elena Blundo, Marzia Cuccu, Federico Tuzi, Michele Re Fiorentin, Giorgio Pettinari, Atanu Patra, Salvatore Cianci, Zakhar Kudrynskyi, Marco Felici, Takashi Taniguchi, Kenji Watanabe, Amalia Patanè, Maurizia Palummo, Antonio Polimeni","doi":"arxiv-2409.09799","DOIUrl":"https://doi.org/arxiv-2409.09799","url":null,"abstract":"Two-dimensional crystals stack together through weak van der Waals (vdW)\u0000forces, offering unlimited possibilities to play with layer number, order and\u0000twist angle in vdW heterostructures (HSs). The realisation of high-performance\u0000optoelectronic devices, however, requires the achievement of specific band\u0000alignments, $k$-space matching between conduction band minima and valence band\u0000maxima, as well as efficient charge transfer between the constituent layers.\u0000Fine tuning mechanisms to design ideal HSs are lacking. Here, we show that\u0000layer-selective strain engineering can be exploited as an extra degree of\u0000freedom in vdW HSs to tailor their band alignment and optical properties. To\u0000that end, strain is selectively applied to MS$_2$ (M=Mo,W) monolayers in\u0000InSe/MS$_2$ HSs. This triggers a giant PL enhancement of the highly tuneable\u0000but weakly emitting InSe by one to three orders of magnitude. Resonant PL\u0000excitation measurements, supported by first-principle calculations, provide\u0000evidence of a strain-activated direct charge transfer from the MS$_2$ MLs\u0000toward InSe. This significant emission enhancement achieved for InSe widens its\u0000range of applications for optoelectronics.","PeriodicalId":501137,"journal":{"name":"arXiv - PHYS - Mesoscale and Nanoscale Physics","volume":"17 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142269074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Robust Coulomb Gap and Varied-temperature Study of Epitaxial 1T'-WSe$_2$ Monolayers 外延 1T'-WSe$_2$ 单层的稳健库仑间隙和变温研究
Pub Date : 2024-09-15 DOI: arxiv-2409.09698
Wang Chen, Mengli Hu, Junyu Zong, Xuedong Xie, Wei Ren, Qinghao Meng, Fan Yu, Qichao Tian, Shaoen Jin, Xiaodong Qiu, Kaili Wang, Can Wang, Junwei Liu, Fang-Sen Li, Li Wang, Yi Zhang
The transition metal dichalcogenides (TMDCs) with a 1T' structural phase arepredicted to be two-dimensional topological insulators at zero temperature.Although the quantized edge conductance of 1T'-WTe$_2$ has been confirmed tosurvive up to 100 K, this temperature is still relatively low for industrialapplications. Addressing the limited studies on temperature effects in1T'-TMDCs, our research focuses on the electronic and crystal properties of theepitaxial 1T'-WSe$_2$ monolayers grown on bilayer graphene (BLG) andSrTiO$_3$(100) substrates at various temperatures. For the 1T'-WSe$_2$ grown onBLG, we observed a significant thermal expansion effect on its band structureswith a thermal expansion coefficient of $sim$60$times$10$^{-6}$ K$^{-1}$. Incontrast, the 1T'-WSe$_2$ grown on SrTiO$_3$(100) exhibits minimal changes withvaried temperatures due to the enhanced strain exerted by the substrate.Besides, A significant Coulomb gap (CG) was observed pinned at the Fermi levelin the angle-resolved photoemission spectroscopy (ARPES) and scanning tunnelingspectroscopy (STS). The CG was founded to decrease with increasingtemperatures, and can persist up to 200 K for 1T'-WSe$_2$/BLG, consistent withour Monte Carlo simulations. The robustness of the CG and the positivefundamental gap endow the epitaxial 1T'-WSe$_2$ monolayers with huge potentialfor realizing the quantum spin Hall devices.
虽然 1T'-WTe$_2$ 的量子化边缘电导已被证实可存活到 100 K,但对于工业应用来说,这个温度仍然相对较低。针对 1T'-TMDC 中温度效应研究有限的问题,我们的研究重点是在不同温度下生长在双层石墨烯(BLG)和硒钛氧化物(SrTiO$_3$(100) )基底上的外延 1T'-WSe$_2$ 单层的电子和晶体特性。对于生长在双层石墨烯(BLG)上的 1T'-WSe$_2$,我们观察到其带状结构受到显著的热膨胀影响,热膨胀系数为 $sim$60$times$10$^{-6}$K$^{-1}$。相比之下,生长在 SrTiO$_3$(100) 上的 1T'-WSe$_2$ 在不同温度下的变化极小,这是由于衬底施加的应变增强所致。此外,在角度分辨光发射光谱(ARPES)和扫描隧道光谱(STS)中观察到,费米级存在明显的库仑间隙(CG)。研究发现,CG 会随着温度的升高而减小,1T'-WSe$_2$/BLG 的 CG 可持续到 200 K,这与我们的蒙特卡罗模拟结果一致。CG 的稳健性和正基本间隙赋予了外延 1T'-WSe$_2$ 单层实现量子自旋霍尔器件的巨大潜力。
{"title":"Robust Coulomb Gap and Varied-temperature Study of Epitaxial 1T'-WSe$_2$ Monolayers","authors":"Wang Chen, Mengli Hu, Junyu Zong, Xuedong Xie, Wei Ren, Qinghao Meng, Fan Yu, Qichao Tian, Shaoen Jin, Xiaodong Qiu, Kaili Wang, Can Wang, Junwei Liu, Fang-Sen Li, Li Wang, Yi Zhang","doi":"arxiv-2409.09698","DOIUrl":"https://doi.org/arxiv-2409.09698","url":null,"abstract":"The transition metal dichalcogenides (TMDCs) with a 1T' structural phase are\u0000predicted to be two-dimensional topological insulators at zero temperature.\u0000Although the quantized edge conductance of 1T'-WTe$_2$ has been confirmed to\u0000survive up to 100 K, this temperature is still relatively low for industrial\u0000applications. Addressing the limited studies on temperature effects in\u00001T'-TMDCs, our research focuses on the electronic and crystal properties of the\u0000epitaxial 1T'-WSe$_2$ monolayers grown on bilayer graphene (BLG) and\u0000SrTiO$_3$(100) substrates at various temperatures. For the 1T'-WSe$_2$ grown on\u0000BLG, we observed a significant thermal expansion effect on its band structures\u0000with a thermal expansion coefficient of $sim$60$times$10$^{-6}$ K$^{-1}$. In\u0000contrast, the 1T'-WSe$_2$ grown on SrTiO$_3$(100) exhibits minimal changes with\u0000varied temperatures due to the enhanced strain exerted by the substrate.\u0000Besides, A significant Coulomb gap (CG) was observed pinned at the Fermi level\u0000in the angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling\u0000spectroscopy (STS). The CG was founded to decrease with increasing\u0000temperatures, and can persist up to 200 K for 1T'-WSe$_2$/BLG, consistent with\u0000our Monte Carlo simulations. The robustness of the CG and the positive\u0000fundamental gap endow the epitaxial 1T'-WSe$_2$ monolayers with huge potential\u0000for realizing the quantum spin Hall devices.","PeriodicalId":501137,"journal":{"name":"arXiv - PHYS - Mesoscale and Nanoscale Physics","volume":"31 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142253562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Scaling the topological transport based on an effective Weyl model 基于有效韦尔模型的拓扑输运缩放
Pub Date : 2024-09-15 DOI: arxiv-2409.09709
Shen Zhang, Jinying Yang, Meng Lyu, Junyan Liu, Binbin Wang, Hongxiang Wei, Claudia Felser, Wenqing Zhang, Enke Liu, Baogen Shen
Magnetic topological semimetals are increasingly fueling interests in exoticelectronic-thermal physics including thermoelectrics and spintronics. Tocontrol the transports of topological carriers in such materials becomes acentral issue. However, the topological bands in real materials are normallyintricate, leaving obstacles to understand the transports in a physically clearway. Parallel to the renowned effective two-band model in magnetic field scalefor semiconductors, here, an effective Weyl-band model in temperature scale wasdeveloped with pure Weyl state and a few meaningful parameters for topologicalsemimetals. Based on the model, a universal scaling was established andsubsequently verified by reported experimental transports. The essential signregularity of anomalous Hall and Nernst transports was revealed with connectionto chiralities of Weyl nodes and carrier types. Upon a double-Weyl model, aconcept of Berry-curvature ferrimagnetic structure, as an analogy to thereal-space magnetic structure, was further proposed and well described theemerging sign reversal of Nernst thermoelectric transports in temperaturescale. Our study offers a convenient tool for scaling the Weyl-fermion-relatedtransport physics, and promotes the modulations and applications of magnetictopological materials in future topological quantum devices.
磁性拓扑半金属正日益激发人们对外电子热物理学(包括热电和自旋电子学)的兴趣。如何控制此类材料中拓扑载流子的传输成为一个核心问题。然而,真实材料中的拓扑带通常是错综复杂的,这就为理解物理上的转运留下了障碍。与著名的半导体磁场尺度有效双带模型类似,本文针对拓扑金属,利用纯韦尔态和一些有意义的参数,建立了温度尺度的有效韦尔带模型。在该模型的基础上,建立了一个通用的比例尺,并随后通过报告的实验转运进行了验证。研究揭示了反常霍尔和内斯特转运的基本符号规律与韦尔节点和载流子类型的手性之间的关系。在双韦尔模型的基础上,进一步提出了贝里曲率铁磁性结构的概念,并将其与等空间磁性结构相类比,很好地描述了在温度尺度上出现的诺尔热电传输的符号反转。我们的研究为扩展与韦尔-费米子相关的传输物理学提供了便捷的工具,并促进了磁拓扑材料在未来拓扑量子器件中的调制和应用。
{"title":"Scaling the topological transport based on an effective Weyl model","authors":"Shen Zhang, Jinying Yang, Meng Lyu, Junyan Liu, Binbin Wang, Hongxiang Wei, Claudia Felser, Wenqing Zhang, Enke Liu, Baogen Shen","doi":"arxiv-2409.09709","DOIUrl":"https://doi.org/arxiv-2409.09709","url":null,"abstract":"Magnetic topological semimetals are increasingly fueling interests in exotic\u0000electronic-thermal physics including thermoelectrics and spintronics. To\u0000control the transports of topological carriers in such materials becomes a\u0000central issue. However, the topological bands in real materials are normally\u0000intricate, leaving obstacles to understand the transports in a physically clear\u0000way. Parallel to the renowned effective two-band model in magnetic field scale\u0000for semiconductors, here, an effective Weyl-band model in temperature scale was\u0000developed with pure Weyl state and a few meaningful parameters for topological\u0000semimetals. Based on the model, a universal scaling was established and\u0000subsequently verified by reported experimental transports. The essential sign\u0000regularity of anomalous Hall and Nernst transports was revealed with connection\u0000to chiralities of Weyl nodes and carrier types. Upon a double-Weyl model, a\u0000concept of Berry-curvature ferrimagnetic structure, as an analogy to the\u0000real-space magnetic structure, was further proposed and well described the\u0000emerging sign reversal of Nernst thermoelectric transports in temperature\u0000scale. Our study offers a convenient tool for scaling the Weyl-fermion-related\u0000transport physics, and promotes the modulations and applications of magnetic\u0000topological materials in future topological quantum devices.","PeriodicalId":501137,"journal":{"name":"arXiv - PHYS - Mesoscale and Nanoscale Physics","volume":"114 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142253560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Strong and tunable coupling between antiferromagnetic magnons and surface plasmons 反铁磁磁子与表面质子之间的强可调耦合
Pub Date : 2024-09-15 DOI: arxiv-2409.09710
H. Y. Yuan, Yaroslav M. Blanter, H. Q. Lin
Surface plasmons are the collective electron excitations in metallic systemsand the associated electromagnetic wave usually has the transverse magnetic(TM) polarization. On the other hand, spin waves are the spin excitationsperpendicular to the equilibrium magnetization and are usually circularlypolarized in a ferromagnet. The direct coupling of these two modes is difficultdue to the difficulty of matching electromagnetic boundary conditions at theinterface of magnetic and non-magnetic materials. Here, we overcome thischallenge by utilizing the linearly polarized spin waves in antiferromagnets(AFM) and show that a strong coupling between AFM magnons and surface plasmonscan be realized in a hybrid 2D material/AFM structure, featuring a clearanticrossing spectrum at resonance. The coupling strength, characterized by thegap of anticrossing at resonance, can be tuned by electric gating on 2Dmaterials and be probed by measuring the two reflection minima in thereflection spectrum. Further, as a potential application, we show thatplasmonic modes can assist the coupling of two well-separated AFMs over severalmicrometers, featuring symmetric and antisymmetric hybrid modes. Our resultsmay open a new platform to study antiferromagnetic spintronics and itsinterplay with plasmonic photonics.
表面等离子体是金属系统中电子的集体激发,相关电磁波通常具有横向磁(TM)极化。另一方面,自旋波是垂直于平衡磁化的自旋激发,在铁磁体中通常是圆极化的。由于磁性材料和非磁性材料界面的电磁边界条件难以匹配,这两种模式的直接耦合十分困难。在这里,我们利用反铁磁体(AFM)中的线性极化自旋波克服了这一难题,并证明在二维材料/AFM 混合结构中可以实现 AFM 磁子与表面等离子体之间的强耦合,其特点是共振时具有清晰的交叉谱。耦合强度以共振时的反交间隙为特征,可通过二维材料上的电门控进行调整,并通过测量反射谱中的两个反射极小值进行探测。此外,作为一种潜在的应用,我们还展示了plasmonic 模式可以帮助两个分离良好的原子力显微镜在几微米范围内耦合,具有对称和非对称混合模式的特点。我们的研究成果为研究反铁磁自旋电子学及其与等离子光子学的相互作用开辟了一个新平台。
{"title":"Strong and tunable coupling between antiferromagnetic magnons and surface plasmons","authors":"H. Y. Yuan, Yaroslav M. Blanter, H. Q. Lin","doi":"arxiv-2409.09710","DOIUrl":"https://doi.org/arxiv-2409.09710","url":null,"abstract":"Surface plasmons are the collective electron excitations in metallic systems\u0000and the associated electromagnetic wave usually has the transverse magnetic\u0000(TM) polarization. On the other hand, spin waves are the spin excitations\u0000perpendicular to the equilibrium magnetization and are usually circularly\u0000polarized in a ferromagnet. The direct coupling of these two modes is difficult\u0000due to the difficulty of matching electromagnetic boundary conditions at the\u0000interface of magnetic and non-magnetic materials. Here, we overcome this\u0000challenge by utilizing the linearly polarized spin waves in antiferromagnets\u0000(AFM) and show that a strong coupling between AFM magnons and surface plasmons\u0000can be realized in a hybrid 2D material/AFM structure, featuring a clear\u0000anticrossing spectrum at resonance. The coupling strength, characterized by the\u0000gap of anticrossing at resonance, can be tuned by electric gating on 2D\u0000materials and be probed by measuring the two reflection minima in the\u0000reflection spectrum. Further, as a potential application, we show that\u0000plasmonic modes can assist the coupling of two well-separated AFMs over several\u0000micrometers, featuring symmetric and antisymmetric hybrid modes. Our results\u0000may open a new platform to study antiferromagnetic spintronics and its\u0000interplay with plasmonic photonics.","PeriodicalId":501137,"journal":{"name":"arXiv - PHYS - Mesoscale and Nanoscale Physics","volume":"10 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142253599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
arXiv - PHYS - Mesoscale and Nanoscale Physics
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