Pub Date : 2024-01-02DOI: 10.1134/s1064226923100121
V. I. Parfenov, A. A. Kalininskii
Abstract
An optimal complex algorithm for the joint detection and classification of objects with a radial structure of wireless sensor networks has been developed. This algorithm is based on the processing of decisions about the belonging of an object to a particular class by individual sensors with their own weight, depending on the characteristics of the sensor. The choice of the number and types of sensors used can be carried out on the basis of solving the optimization problem presented in the work.
{"title":"Joint Detection and Classification of Objects in Complexing Decisions Made by Sensors in Wireless Sensor Networks","authors":"V. I. Parfenov, A. A. Kalininskii","doi":"10.1134/s1064226923100121","DOIUrl":"https://doi.org/10.1134/s1064226923100121","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>An optimal complex algorithm for the joint detection and classification of objects with a radial structure of wireless sensor networks has been developed. This algorithm is based on the processing of decisions about the belonging of an object to a particular class by individual sensors with their own weight, depending on the characteristics of the sensor. The choice of the number and types of sensors used can be carried out on the basis of solving the optimization problem presented in the work.</p>","PeriodicalId":50229,"journal":{"name":"Journal of Communications Technology and Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2024-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139078946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-02DOI: 10.1134/s1064226923100042
Yu. V. Andreyev, M. M. Petrosyan
Abstract
To study the propagation of an indoor ultrawideband wave, a model with paired reflections from surfaces located opposite each other is proposed. It is shown that, in contrast to open areas, the multipath environment of premises is close to free space in terms of the character of wave attenuation with distance. Due to this, the energy reserve of an ultra-wideband communication line in a room should be higher than outdoors.
{"title":"Indoor Power Attenuation Model of Ultrawideband Waves","authors":"Yu. V. Andreyev, M. M. Petrosyan","doi":"10.1134/s1064226923100042","DOIUrl":"https://doi.org/10.1134/s1064226923100042","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>To study the propagation of an indoor ultrawideband wave, a model with paired reflections from surfaces located opposite each other is proposed. It is shown that, in contrast to open areas, the multipath environment of premises is close to free space in terms of the character of wave attenuation with distance. Due to this, the energy reserve of an ultra-wideband communication line in a room should be higher than outdoors.</p>","PeriodicalId":50229,"journal":{"name":"Journal of Communications Technology and Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2024-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139078992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-02DOI: 10.1134/s1064226923100030
Yu. V. Andreyev, M. M. Petrosyan
Abstract
The features of propagation of an ultrawideband (UWB) wave over Earth’s surface in a two-ray model are studied. It is shown that there is a limiting distance (break point) up to which the UWB wave attenuates approximately as in free space with pathloss exponent n = 2 without experiencing fading due to the extremely short UWB autocorrelation time; beyond the break point, the wave attenuation exponent becomes equal to n = 4.
摘要 在双射线模型中研究了超宽带（UWB）波在地球表面的传播特征。研究表明，由于超宽带波的自相关时间极短，因此存在一个极限距离（断点），在此距离之前，超宽带波的衰减近似于自由空间中的路径损耗指数 n = 2，而不会出现衰减；在断点之后，波的衰减指数变为 n = 4。
{"title":"Investigation of the Attenuation Rate of a Ultrawideband Wave Outdoors in a Two-Ray Model","authors":"Yu. V. Andreyev, M. M. Petrosyan","doi":"10.1134/s1064226923100030","DOIUrl":"https://doi.org/10.1134/s1064226923100030","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The features of propagation of an ultrawideband (UWB) wave over Earth’s surface in a two-ray model are studied. It is shown that there is a limiting distance (break point) up to which the UWB wave attenuates approximately as in free space with pathloss exponent <i>n</i> = 2 without experiencing fading due to the extremely short UWB autocorrelation time; beyond the break point, the wave attenuation exponent becomes equal to <i>n</i> = 4.</p>","PeriodicalId":50229,"journal":{"name":"Journal of Communications Technology and Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2024-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139078994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-02DOI: 10.1134/s1064226923070070
V. Yu. Lisenkov, M. M. Kharkov, D. V. Kolodko, A. V. Tumarkin, A. V. Kaziev
Abstract
The modes of maintaining a pulsed magnetron discharge with a hot thermally insulated silicon target during operation in oxygen-containing gas mixtures (Ar + O2) have been studied. The range of the average power density at the target was 60–120 W/cm2 at a pulse duration of 100–300 µs and a repetition rate of 0.5–2 kHz. Maps of stable operating modes of the sputtering system have been determined. SixOy coatings were prepared on single-crystal silicon substrates at different values of the oxygen fraction in the gas flow and various parameters of the magnetron pulsed power supply and diagnosed.
{"title":"Preparation of Silicon Oxide Films by a Hot-Target Impulse Magnetron Deposition in a Reactive Mixture","authors":"V. Yu. Lisenkov, M. M. Kharkov, D. V. Kolodko, A. V. Tumarkin, A. V. Kaziev","doi":"10.1134/s1064226923070070","DOIUrl":"https://doi.org/10.1134/s1064226923070070","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The modes of maintaining a pulsed magnetron discharge with a hot thermally insulated silicon target during operation in oxygen-containing gas mixtures (Ar + O<sub>2</sub>) have been studied. The range of the average power density at the target was 60–120 W/cm<sup>2</sup> at a pulse duration of 100–300 µs and a repetition rate of 0.5–2 kHz. Maps of stable operating modes of the sputtering system have been determined. Si<sub><i>x</i></sub>O<sub><i>y</i></sub> coatings were prepared on single-crystal silicon substrates at different values of the oxygen fraction in the gas flow and various parameters of the magnetron pulsed power supply and diagnosed.</p>","PeriodicalId":50229,"journal":{"name":"Journal of Communications Technology and Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2024-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139080178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-02DOI: 10.1134/s1064226923110013
A. H. M. Almawgani, K. Srilatha, B. T. P. Madhav, B. Venkatesh, C. V. S. A. Sravan, M. C. Rao, A. R. H. Alhawari
Abstract
A slotted loop structured metasurface absorber has been designed with an independent angle of incidence and absorption useful for S and C band applications. The metasurface unit cell consists of square slots with an internally attached loop structure. The proposed absorber supports an insensitive angle of polarization. Metasurface absorber shows impedance matching at two resonating frequencies with the highest percentage of absorptivity. The proposed metasurface exhibits dual band characteristics which are at 3.2 and 7.6 GHz. For the transverse magnetic (TM) and transverse electric (TE) modes the absorptivity is obtained at 90 and 80% above values. The metasurface absorber is designed using a polyimide substrate having a thickness of 0.1 mm. The phenomenon of absorption is obtained in terms of E-field and surface current distribution patterns. Also, permittivity and permeability have been explained to analyze the metasurface’s properties. The metasurface absorber was prototyped and the results are measured for the simulated one and shows that both the results are in a good record.
摘要 设计了一种具有独立入射角和吸收角的槽环结构元面吸收器，适用于 S 波段和 C 波段应用。元表面单元单元由内部连接环形结构的方形槽组成。所提出的吸收器支持不敏感的极化角。元表面吸收器在两个共振频率上显示出阻抗匹配，吸收率百分比最高。拟议的元表面具有双频特性，频率分别为 3.2 和 7.6 千兆赫。对于横向磁（TM）和横向电（TE）模式，吸收率分别达到 90% 和 80% 以上。元表面吸收器的设计使用了厚度为 0.1 毫米的聚酰亚胺衬底。从电场和表面电流分布图可以看出吸收现象。此外，还解释了介电常数和磁导率，以分析元表面的特性。对元表面吸收器进行了原型设计，并对模拟吸收器的结果进行了测量，结果表明两者的记录都很好。
{"title":"Dual Band Metasurface Absorber with Insensitive Polarization and Incidence Angle for S and C Band Applications","authors":"A. H. M. Almawgani, K. Srilatha, B. T. P. Madhav, B. Venkatesh, C. V. S. A. Sravan, M. C. Rao, A. R. H. Alhawari","doi":"10.1134/s1064226923110013","DOIUrl":"https://doi.org/10.1134/s1064226923110013","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A slotted loop structured metasurface absorber has been designed with an independent angle of incidence and absorption useful for S and C band applications. The metasurface unit cell consists of square slots with an internally attached loop structure. The proposed absorber supports an insensitive angle of polarization. Metasurface absorber shows impedance matching at two resonating frequencies with the highest percentage of absorptivity. The proposed metasurface exhibits dual band characteristics which are at 3.2 and 7.6 GHz. For the transverse magnetic (TM) and transverse electric (TE) modes the absorptivity is obtained at 90 and 80% above values. The metasurface absorber is designed using a polyimide substrate having a thickness of 0.1 mm. The phenomenon of absorption is obtained in terms of E-field and surface current distribution patterns. Also, permittivity and permeability have been explained to analyze the metasurface’s properties. The metasurface absorber was prototyped and the results are measured for the simulated one and shows that both the results are in a good record.</p>","PeriodicalId":50229,"journal":{"name":"Journal of Communications Technology and Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2024-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139078947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-02DOI: 10.1134/s1064226923110025
M. H. Baqir
Abstract
In this study, an inverter was designed with high power, very low loss, and high accuracy with a steady power factor. Due to the use of ultrasonic pulse width modulation (PWM) with frequencies 20–500 kHz, com-pound splicing (CS), and connection to a three-phase dynamic load, this work is considered an innovation. The use of an oscillator circuit with a high frequency of 4 GHz as a microcontroller is a novelty; in addition, a designed ADC is utilized to increase accuracy and reduce losses by controlling the input of the voltage, as well as contributing to the reduction of loss brought on by the characteristics of the voltage source inverters (VSIs), such as dead time determined by the excess voltage or voltage drop in the inverter and abnormal circumstances for the load current, such as short-circuit current in the production phase. The innovation relates to the inverter’s load sensing circuit, current smoothing during operation, reaction spontaneous power factor enhancement with the inverter, and compensation of active and reactive power of passive devices. This invention contributes to the advancement of DC-to-AC power converters through the achievement of extremely low losses, high precision, and lightweight construction. An accuracy of 99% was obtained, and the total harmonic distortion (THD) of the voltage and current was 0.1% → 0.8%. A power MOSFET (IXFX120N65X) was used along with an FPGA to improve control over the creation of ultrasonic PWM signals with the programmable peripheral interface (PPI) 8255A for regulatory work. The results serve as proof of this.
{"title":"Low-Loss Inverter Design Using Ultrasonic Pulse Width Modulation","authors":"M. H. Baqir","doi":"10.1134/s1064226923110025","DOIUrl":"https://doi.org/10.1134/s1064226923110025","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>In this study, an inverter was designed with high power, very low loss, and high accuracy with a steady power factor. Due to the use of ultrasonic pulse width modulation (PWM) with frequencies 20–500 kHz, com-pound splicing (CS), and connection to a three-phase dynamic load, this work is considered an innovation. The use of an oscillator circuit with a high frequency of 4 GHz as a microcontroller is a novelty; in addition, a designed ADC is utilized to increase accuracy and reduce losses by controlling the input of the voltage, as well as contributing to the reduction of loss brought on by the characteristics of the voltage source inverters (VSIs), such as dead time determined by the excess voltage or voltage drop in the inverter and abnormal circumstances for the load current, such as short-circuit current in the production phase. The innovation relates to the inverter’s load sensing circuit, current smoothing during operation, reaction spontaneous power factor enhancement with the inverter, and compensation of active and reactive power of passive devices. This invention contributes to the advancement of DC-to-AC power converters through the achievement of extremely low losses, high precision, and lightweight construction. An accuracy of 99% was obtained, and the total harmonic distortion (THD) of the voltage and current was 0.1% → 0.8%. A power MOSFET (IXFX120N65X) was used along with an FPGA to improve control over the creation of ultrasonic PWM signals with the programmable peripheral interface (PPI) 8255A for regulatory work. The results serve as proof of this.</p>","PeriodicalId":50229,"journal":{"name":"Journal of Communications Technology and Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2024-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139078949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-02DOI: 10.1134/s1064226923100170
I. A. Surazhevsky, V. V. Rylkov, V. A. Demin
Abstract
We suggested a compact behavioral model of a nanocomposite memristor (Co40Fe40B20)x(LiNbO3)100 – x, which quantitatively describes the dynamics of changes in the conductivity of laboratory samples, and also implements the mechanisms of the finite storage time of resistive states and the spread in switching voltages from cycle to cycle and from device to device. The possibility of implementing a pulsed neural network with synaptic memristor connections based on this model is shown.
{"title":"Compact Behavioral Model of a Nanocomposit Memristor","authors":"I. A. Surazhevsky, V. V. Rylkov, V. A. Demin","doi":"10.1134/s1064226923100170","DOIUrl":"https://doi.org/10.1134/s1064226923100170","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>We suggested a compact behavioral model of a nanocomposite memristor (Co<sub>40</sub>Fe<sub>40</sub>B<sub>20</sub>)<sub><i>x</i></sub>(LiNbO<sub>3</sub>)<sub>100 – <i>x</i></sub>, which quantitatively describes the dynamics of changes in the conductivity of laboratory samples, and also implements the mechanisms of the finite storage time of resistive states and the spread in switching voltages from cycle to cycle and from device to device. The possibility of implementing a pulsed neural network with synaptic memristor connections based on this model is shown.</p>","PeriodicalId":50229,"journal":{"name":"Journal of Communications Technology and Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2024-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139078956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-13DOI: 10.1134/s1064226923100017
M. S. Afanasyev, D. A. Belorusov, D. A. Kiselev, V. A. Luzanov, G. V. Chucheva
Abstract
Hafnium oxide (HfO2) films are synthesized on silicon substrates using magnetron sputtering under various technological conditions. The results on the structural composition of HfO2 films and the electrical properties of metal–insulator–semiconductor heterostructures (Ni– HfO2–Si) based on them are presented.
{"title":"Effect of Formation Conditions for Hafnium Oxide Films on Structural and Electrophysical Properties of Heterostructures","authors":"M. S. Afanasyev, D. A. Belorusov, D. A. Kiselev, V. A. Luzanov, G. V. Chucheva","doi":"10.1134/s1064226923100017","DOIUrl":"https://doi.org/10.1134/s1064226923100017","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Hafnium oxide (HfO<sub>2</sub>) films are synthesized on silicon substrates using magnetron sputtering under various technological conditions. The results on the structural composition of HfO<sub>2</sub> films and the electrical properties of metal–insulator–semiconductor heterostructures (Ni– HfO<sub>2</sub>–Si) based on them are presented.</p>","PeriodicalId":50229,"journal":{"name":"Journal of Communications Technology and Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2023-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138628328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-13DOI: 10.1134/s1064226923070021
V. V. Davydov, S. E. Logunov, D. S. Provodin, R. V. Davydov
Abstract
A mechanism of formation of the nutation line in a flowing liquid is discussed. New equations of motion of the longitudinal and transverse components of the magnetization vector in a nutation coil are derived, which take into account magnetic field inhomogeneity ΔН0 in the area of impact of RF field Н1 on the flowing fluid. In addition, the equations make allowance for the nature of magnetic field inhomogeneity change ΔН0 during motion of the liquid along the nutation coil. The results of experimental investigations of the nutation line shape are reported. The theoretical calculation is compared with experimental data.
{"title":"Features of the Formation of the Nutation Line in Nuclear Magnetic Resonance Magnetometers and Liquid Flow Meters","authors":"V. V. Davydov, S. E. Logunov, D. S. Provodin, R. V. Davydov","doi":"10.1134/s1064226923070021","DOIUrl":"https://doi.org/10.1134/s1064226923070021","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A mechanism of formation of the nutation line in a flowing liquid is discussed. New equations of motion of the longitudinal and transverse components of the magnetization vector in a nutation coil are derived, which take into account magnetic field inhomogeneity Δ<i>Н</i><sub>0</sub> in the area of impact of RF field <i>Н</i><sub>1</sub> on the flowing fluid. In addition, the equations make allowance for the nature of magnetic field inhomogeneity change Δ<i>Н</i><sub>0</sub> during motion of the liquid along the nutation coil. The results of experimental investigations of the nutation line shape are reported. The theoretical calculation is compared with experimental data.</p>","PeriodicalId":50229,"journal":{"name":"Journal of Communications Technology and Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2023-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138628336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-13DOI: 10.1134/s1064226923100091
K. V. Lopukhin, V. V. Balashov, S. M. Kozlova, A. Yu. Kanaev, A. A. Efimov, P. P. Faikov
Abstract
Samples of Cr4+:LuAG ceramics have been synthesized using commercial and reprecipitated Lu2O3 powders. The optimum conditions for the synthesis of the reprecipitated Lu2O3 powder have been established, a dilatometric analysis of the ceramics has been carried out, and the effect of the initial Lu2O3 powder on the optical properties of the ceramics has been studied.
{"title":"Effect of Raw Material on the Properties of LuAG:Cr4+ Ceramics","authors":"K. V. Lopukhin, V. V. Balashov, S. M. Kozlova, A. Yu. Kanaev, A. A. Efimov, P. P. Faikov","doi":"10.1134/s1064226923100091","DOIUrl":"https://doi.org/10.1134/s1064226923100091","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Samples of Cr<sup>4+</sup>:LuAG ceramics have been synthesized using commercial and reprecipitated Lu<sub>2</sub>O<sub>3</sub> powders. The optimum conditions for the synthesis of the reprecipitated Lu<sub>2</sub>O<sub>3</sub> powder have been established, a dilatometric analysis of the ceramics has been carried out, and the effect of the initial Lu<sub>2</sub>O<sub>3</sub> powder on the optical properties of the ceramics has been studied.</p>","PeriodicalId":50229,"journal":{"name":"Journal of Communications Technology and Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2023-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138628500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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