Yuki Ogawa, R. Akaike, Jiei Hayama, K. Uesugi, K. Shojiki, Toru Akiyama, Takao Nakamura, Hideto Miyake
Face-to-face annealed and sputter-deposited aluminum nitride (FFA Sp-AlN) has potential in deep-ultraviolet light-emitting devices. Herein, the effects of the substrate off-cut angle (θsub) from an r-plane sapphire toward the c-axis projection direction and sputtering temperature (Tsp) on the crystallinity and surface morphology of a-plane AlN films are investigated. Increasing θsub in the minus-off direction, which occurs when the substrate surface approaches the sapphire c-plane, and lowering Tsp suppress the mixing of anomalous non-a-direction oriented domains. This reduced mixing enhances the surface flatness and crystallinity of a-plane FFA Sp-AlN. Moreover, the c-axis direction of the a-plane AlN film is inverted depending on the substrate off-cut angle. Ab initio calculations indicate that the interface stability between the r-plane sapphire substrate and the a-plane AlN film can explain the dependence of the crystallinity and c-axis orientation of FFA Sp-AlN on the surface off-cut of the r-plane sapphire.
面对面退火和溅射沉积氮化铝（FFA Sp-AlN）在深紫外发光器件中具有潜力。本文研究了从 r 面蓝宝石向 c 轴投影方向的基片偏离切割角 (θsub)和溅射温度 (Tsp) 对 a 面氮化铝薄膜的结晶度和表面形貌的影响。增加负偏离方向上的θsub（当衬底表面接近蓝宝石 c 轴平面时发生）和降低 Tsp 可抑制非 a 轴取向异常畴的混合。这种混合的减少提高了 a 平面 FFA Sp-AlN 的表面平整度和结晶度。此外，a 面 AlN 薄膜的 c 轴方向随基底偏切角度的变化而倒转。Ab initio 计算表明，r 面蓝宝石衬底和 a 面 AlN 薄膜之间的界面稳定性可以解释 FFA Sp-AlN 的结晶度和 c 轴方向对 r 面蓝宝石表面偏切的依赖性。
{"title":"Crystal orientation control of a-plane AlN films on r-plane sapphire fabricated by sputtering and high-temperature annealing","authors":"Yuki Ogawa, R. Akaike, Jiei Hayama, K. Uesugi, K. Shojiki, Toru Akiyama, Takao Nakamura, Hideto Miyake","doi":"10.1063/5.0202824","DOIUrl":"https://doi.org/10.1063/5.0202824","url":null,"abstract":"Face-to-face annealed and sputter-deposited aluminum nitride (FFA Sp-AlN) has potential in deep-ultraviolet light-emitting devices. Herein, the effects of the substrate off-cut angle (θsub) from an r-plane sapphire toward the c-axis projection direction and sputtering temperature (Tsp) on the crystallinity and surface morphology of a-plane AlN films are investigated. Increasing θsub in the minus-off direction, which occurs when the substrate surface approaches the sapphire c-plane, and lowering Tsp suppress the mixing of anomalous non-a-direction oriented domains. This reduced mixing enhances the surface flatness and crystallinity of a-plane FFA Sp-AlN. Moreover, the c-axis direction of the a-plane AlN film is inverted depending on the substrate off-cut angle. Ab initio calculations indicate that the interface stability between the r-plane sapphire substrate and the a-plane AlN film can explain the dependence of the crystallinity and c-axis orientation of FFA Sp-AlN on the surface off-cut of the r-plane sapphire.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140975688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The Ising model, initially proposed about 100 years ago to explain ferromagnetism and phase transitions, has become a central pillar of statistical physics and a powerful tool for diverse applications in other fields including environmental studies. In this paper, we introduce continuous spin values between −1 and +1 to a two-dimensional Ising model and utilize the generalized Ising lattice to simulate the dynamics of sea ice/water transition for a large area of 1500 km by 1500 km in the Arctic region. The simulation process follows the Metropolis-Hastings algorithm and incorporates an innovative factor to account for the inertia of spin value changes. Using the sea ice concentration data collected by the National Snow and Ice Data Center, our results exhibit striking similarity between the simulated and the observed ice melting and freezing dynamics, and two numerical measures from the simulation—the ice coverage percentage and the ice extent—match closely with the data statistics. Moreover, the model's best-fit parameters demonstrate the substantial impact of the external forces, which can be further enriched and linked to the environmental factors in other climate change research.
{"title":"A study on Arctic sea ice dynamics using the continuous spin Ising model","authors":"Ellen Wang","doi":"10.1063/5.0202612","DOIUrl":"https://doi.org/10.1063/5.0202612","url":null,"abstract":"The Ising model, initially proposed about 100 years ago to explain ferromagnetism and phase transitions, has become a central pillar of statistical physics and a powerful tool for diverse applications in other fields including environmental studies. In this paper, we introduce continuous spin values between −1 and +1 to a two-dimensional Ising model and utilize the generalized Ising lattice to simulate the dynamics of sea ice/water transition for a large area of 1500 km by 1500 km in the Arctic region. The simulation process follows the Metropolis-Hastings algorithm and incorporates an innovative factor to account for the inertia of spin value changes. Using the sea ice concentration data collected by the National Snow and Ice Data Center, our results exhibit striking similarity between the simulated and the observed ice melting and freezing dynamics, and two numerical measures from the simulation—the ice coverage percentage and the ice extent—match closely with the data statistics. Moreover, the model's best-fit parameters demonstrate the substantial impact of the external forces, which can be further enriched and linked to the environmental factors in other climate change research.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140975051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Gyergyek, L. Kos, M. Dimitrova, S. Costea, J. Kovačič
The plasma-wall transition is investigated by a one-dimensional steady-state multifluid model, which was presented in detail in Part I [T. Gyergyek et al., AIP Adv. 14, 045201 (2024)]. In this work, the plasma-wall transition is analyzed for the case where the plasma consists of singly charged positive ions, electrons, and singly charged negative ions. When the temperature and initial density of the negative ions are varied, a transition between two types of solutions of the model is observed. We call them the low and high solution, with respect to the absolute value of the potential drop. When the density and temperature of the negative ions are above a critical value, the low solution is observed. As the mass of the positive ions increases, these critical values also increase, but only until the ion mass is below about 1000 electron masses. With larger ion masses, the critical density of the negative ions and the temperature no longer change. In the low solution, the potential drop in front of the sheath is determined by the negative ions and is smaller in absolute terms than in the case of the high solution, where the potential drop in front of the sheath is determined by the electrons. If the problem is analyzed on the pre-sheath scale, the transition between the low and high solution is very sharp. However, when the neutrality condition is replaced by the Poisson equation, this transition becomes blurred and the solutions of the model equations exhibit oscillations. The role of the smallness parameter is highlighted. It is shown how the initial electric field is determined. Deviation of the negative ion density profile from the Boltzmann relation is discussed.
{"title":"One-dimensional, multi-fluid model of the plasma-wall transition. II. Negative ions","authors":"T. Gyergyek, L. Kos, M. Dimitrova, S. Costea, J. Kovačič","doi":"10.1063/5.0200381","DOIUrl":"https://doi.org/10.1063/5.0200381","url":null,"abstract":"The plasma-wall transition is investigated by a one-dimensional steady-state multifluid model, which was presented in detail in Part I [T. Gyergyek et al., AIP Adv. 14, 045201 (2024)]. In this work, the plasma-wall transition is analyzed for the case where the plasma consists of singly charged positive ions, electrons, and singly charged negative ions. When the temperature and initial density of the negative ions are varied, a transition between two types of solutions of the model is observed. We call them the low and high solution, with respect to the absolute value of the potential drop. When the density and temperature of the negative ions are above a critical value, the low solution is observed. As the mass of the positive ions increases, these critical values also increase, but only until the ion mass is below about 1000 electron masses. With larger ion masses, the critical density of the negative ions and the temperature no longer change. In the low solution, the potential drop in front of the sheath is determined by the negative ions and is smaller in absolute terms than in the case of the high solution, where the potential drop in front of the sheath is determined by the electrons. If the problem is analyzed on the pre-sheath scale, the transition between the low and high solution is very sharp. However, when the neutrality condition is replaced by the Poisson equation, this transition becomes blurred and the solutions of the model equations exhibit oscillations. The role of the smallness parameter is highlighted. It is shown how the initial electric field is determined. Deviation of the negative ion density profile from the Boltzmann relation is discussed.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140975650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Ajithkumar, R. Meenakumari, G. Sucharitha, M. Vinodkumar Reddy, Khurram Javid, P. Lakshminarayana
The main target of this article is to analyze the role of activation energy and thermal radiation effects on the bioconvective peristaltic transport of Sutterby nanofluid in a two-dimensional flexible porous channel with heat and mass transfer. Also, the consequences of Hall current, heat source, and complaint wall properties along with an inclined magnetic field are taken into consideration. The proposed system of governing equations is simplified by using lubrication approximation and solved numerically using MATLAB's bvp5c solver. Further, numerical observations are analyzed to figure out the consequence of different physical parameters on the flow characteristics. According to the observations, it is identified that the Sutterby nanofluid velocity declines with the climb in the damping force parameter, while it enhances with the upsurge in the Darcy number. The Sutterby fluid temperature profile strengthens when the influence of the heat generation and Brinkman number increase, while it depicts the reverse effect with the elevation in the fluid parameter and radiation parameter. The temperature ratio and activation energy parameters were found to have a significant impact on the fluid concentration. The volume of the trapped fluid bolus is an enhancing function of the channel's non-uniformity parameter. Moreover, current work reveals its applicability to recognize the hemodynamic flow analysis and other biofluid movements in the human body and industrial sectors.
{"title":"Bioconvective peristaltic transport of hydromagnetic Sutterby nanofluid through a chemically activated porous channel with gyrotactic microorganisms","authors":"M. Ajithkumar, R. Meenakumari, G. Sucharitha, M. Vinodkumar Reddy, Khurram Javid, P. Lakshminarayana","doi":"10.1063/5.0203027","DOIUrl":"https://doi.org/10.1063/5.0203027","url":null,"abstract":"The main target of this article is to analyze the role of activation energy and thermal radiation effects on the bioconvective peristaltic transport of Sutterby nanofluid in a two-dimensional flexible porous channel with heat and mass transfer. Also, the consequences of Hall current, heat source, and complaint wall properties along with an inclined magnetic field are taken into consideration. The proposed system of governing equations is simplified by using lubrication approximation and solved numerically using MATLAB's bvp5c solver. Further, numerical observations are analyzed to figure out the consequence of different physical parameters on the flow characteristics. According to the observations, it is identified that the Sutterby nanofluid velocity declines with the climb in the damping force parameter, while it enhances with the upsurge in the Darcy number. The Sutterby fluid temperature profile strengthens when the influence of the heat generation and Brinkman number increase, while it depicts the reverse effect with the elevation in the fluid parameter and radiation parameter. The temperature ratio and activation energy parameters were found to have a significant impact on the fluid concentration. The volume of the trapped fluid bolus is an enhancing function of the channel's non-uniformity parameter. Moreover, current work reveals its applicability to recognize the hemodynamic flow analysis and other biofluid movements in the human body and industrial sectors.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140975590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The anomalous-Hall current injection is studied in a Hall device contacted to a lateral load circuit. This anomalous-Hall current is generated inside a Co75Gd25 ferrimagnetic Hall bar and injected into a lateral load circuit contacted at the edges. The current, the voltage, and the power are measured as a function of the magnetization states, the load resistance Rl, and the temperature. It is shown that (1) the resistance associated with the anomalous-Hall current flowing inside the Hall bar is that of the portion of the ferrimagnet located between the lateral contacts, (2) the role of the non-uniformity of the current due to the lateral contacts is small, (3) the maximum power efficiency of the current injection into the load circuit corresponds to the condition of the resistance matching of the two sub-circuits, and (4) this maximum power efficiency is of the order of the square of the anomalous-Hall angle. These observations are in agreement with recent predictions based on a non-equilibrium variational approach.
{"title":"Injection of anomalous-Hall current into a load circuit","authors":"D. Lacour, M. Hehn, Min Xu, J.-E. Wegrowe","doi":"10.1063/5.0205911","DOIUrl":"https://doi.org/10.1063/5.0205911","url":null,"abstract":"The anomalous-Hall current injection is studied in a Hall device contacted to a lateral load circuit. This anomalous-Hall current is generated inside a Co75Gd25 ferrimagnetic Hall bar and injected into a lateral load circuit contacted at the edges. The current, the voltage, and the power are measured as a function of the magnetization states, the load resistance Rl, and the temperature. It is shown that (1) the resistance associated with the anomalous-Hall current flowing inside the Hall bar is that of the portion of the ferrimagnet located between the lateral contacts, (2) the role of the non-uniformity of the current due to the lateral contacts is small, (3) the maximum power efficiency of the current injection into the load circuit corresponds to the condition of the resistance matching of the two sub-circuits, and (4) this maximum power efficiency is of the order of the square of the anomalous-Hall angle. These observations are in agreement with recent predictions based on a non-equilibrium variational approach.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140975971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We investigate the effects of the circularly polarized light (CPL) and the electric field (EF) on the nonlocal transport in a silicene-based antiferromagnet/superconductor/ferromagnet (AF/S/F) asymmetrical junction. For case I (II), the CPL and the EF are applied simultaneously in the antiferromagnetic (ferromagnetic) region, whereas in the ferromagnetic (antiferromagnetic) region, only a constant EF is considered. The spin-valley-resolved conductance can be turned on or off by adjusting the CPL or the EF. The AF/S/F junction can be manipulated as a spin-locked valley filter for case I, while for case II, it can be used not only as a valley-locked spin filter but also as a nonlocal switch between two pure nonlocal processes. Such interesting nonlocal switch effect can be effectively controlled by reversing the direction of the incident energy axis, the handedness of the CPL, or the direction of the EF. These findings may open an avenue to the design and manufacture of the spintronic and valleytronic devices based on the asymmetrical silicene magnetic superconducting heterostructure.
我们研究了圆偏振光（CPL）和电场（EF）对硅基反铁磁体/超导体/铁磁体（AF/S/F）非对称结的非局部传输的影响。在情况 I（II）中，CPL 和 EF 同时作用于反铁磁（铁磁）区域，而在铁磁（反铁磁）区域，只考虑恒定的 EF。通过调节 CPL 或 EF 可以打开或关闭自旋电压分辨电导。在情况 I 中，AF/S/F 结可以作为自旋锁谷滤波器来操纵，而在情况 II 中，它不仅可以作为自旋锁谷滤波器，还可以作为两个纯非局部过程之间的非局部开关。这种有趣的非局部开关效应可以通过扭转入射能量轴的方向、CPL 的手性或 EF 的方向来有效控制。这些发现可能会为设计和制造基于非对称硅烯磁性超导异质结构的自旋电子和谷电子器件开辟一条道路。
{"title":"Optoelectronically controlled spin-valley filter and nonlocal switch based on an asymmetrical silicene magnetic superconducting heterostructure","authors":"Shuo Ma, Hongmei Zhang, Jianjun Liu, De Liu","doi":"10.1063/5.0207076","DOIUrl":"https://doi.org/10.1063/5.0207076","url":null,"abstract":"We investigate the effects of the circularly polarized light (CPL) and the electric field (EF) on the nonlocal transport in a silicene-based antiferromagnet/superconductor/ferromagnet (AF/S/F) asymmetrical junction. For case I (II), the CPL and the EF are applied simultaneously in the antiferromagnetic (ferromagnetic) region, whereas in the ferromagnetic (antiferromagnetic) region, only a constant EF is considered. The spin-valley-resolved conductance can be turned on or off by adjusting the CPL or the EF. The AF/S/F junction can be manipulated as a spin-locked valley filter for case I, while for case II, it can be used not only as a valley-locked spin filter but also as a nonlocal switch between two pure nonlocal processes. Such interesting nonlocal switch effect can be effectively controlled by reversing the direction of the incident energy axis, the handedness of the CPL, or the direction of the EF. These findings may open an avenue to the design and manufacture of the spintronic and valleytronic devices based on the asymmetrical silicene magnetic superconducting heterostructure.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140972358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Metal oxide transistors have garnered substantial attention for their potential in low-power electronics, yet challenges remain in achieving both high performance and low operating voltages through solution-based fabrication methods. Optimizing interfacial engineering at the dielectric/semiconductor interface is of utmost importance in the fabrication of high-performance thin film transistors (TFTs). In the present article, a bilayer Ti3C2Tx-MXene/SnO2–semiconductor (Tx stands for surface termination) configuration is used to fabricate a high-performance n-type thin film transistor by using an ion-conducting Li-Al2O3 gate dielectric on a p+-Si substrate, where electrical charges are formed and modulated at the Li-Al2O3/SnO2 interface, and Ti3C2Tx-MXene nanosheets serve as the primary electrical charge channel due to their long lateral size and high mobility. A comparative characterization of two distinct TFTs is conducted, one featuring Ti3C2Tx MXene and SnO2 semiconductor layer and the other with SnO2 only. Notably, the TFT with the Ti3C2Tx MXene layer has shown a significant boost in the carrier mobility (10.6 cm2/V s), leading to remarkable improvements in the on/off ratio (1.3 × 105) and subthreshold swing (194 mV/decade), whereas the SnO2 TFT without the Ti3C2Tx MXene layer shows a mobility of 1.17 cm2/V s with 8.1 × 102 on/off ratio and 387 mV/decade subthreshold swing. This investigation provides a possible way toward the development of high-performance, low-voltage TFT fabrication with the MXene/semiconductor combination.
{"title":"Role of ultrathin Ti3C2Tx MXene layer for developing solution-processed high-performance low voltage metal oxide transistors","authors":"Ankita Rawat, Utkarsh Pandey, Ritesh Kumar Chourasia, Gaurav Rajput, Bhola Nath Pal, Nitesh K. Chourasia, Pawan Kumar Kulriya","doi":"10.1063/5.0189641","DOIUrl":"https://doi.org/10.1063/5.0189641","url":null,"abstract":"Metal oxide transistors have garnered substantial attention for their potential in low-power electronics, yet challenges remain in achieving both high performance and low operating voltages through solution-based fabrication methods. Optimizing interfacial engineering at the dielectric/semiconductor interface is of utmost importance in the fabrication of high-performance thin film transistors (TFTs). In the present article, a bilayer Ti3C2Tx-MXene/SnO2–semiconductor (Tx stands for surface termination) configuration is used to fabricate a high-performance n-type thin film transistor by using an ion-conducting Li-Al2O3 gate dielectric on a p+-Si substrate, where electrical charges are formed and modulated at the Li-Al2O3/SnO2 interface, and Ti3C2Tx-MXene nanosheets serve as the primary electrical charge channel due to their long lateral size and high mobility. A comparative characterization of two distinct TFTs is conducted, one featuring Ti3C2Tx MXene and SnO2 semiconductor layer and the other with SnO2 only. Notably, the TFT with the Ti3C2Tx MXene layer has shown a significant boost in the carrier mobility (10.6 cm2/V s), leading to remarkable improvements in the on/off ratio (1.3 × 105) and subthreshold swing (194 mV/decade), whereas the SnO2 TFT without the Ti3C2Tx MXene layer shows a mobility of 1.17 cm2/V s with 8.1 × 102 on/off ratio and 387 mV/decade subthreshold swing. This investigation provides a possible way toward the development of high-performance, low-voltage TFT fabrication with the MXene/semiconductor combination.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140976057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A gradient nano-grained (GNG) structure demonstrates satisfactory surface strength. However, the underlying mechanism responsible for its strengthening lacks sufficient research. To explain how gradient nano-grained structures improve surface strength in detail, large-scale parallel molecular dynamics simulations are utilized in this study to investigate the mechanical deformation behavior of BCC tungsten with varying grain sizes during spherical nanoindentation. The findings suggest that a well-designed gradient structure can promote rational plasticity and an appropriate distribution of internal atomic stress. The critical point of maximum stress and hardness is observed when the initial grain size is 4.5 nm, with an average grain size of 7.1 nm. The interaction between grain boundary slip and migration in small grains, along with the enhanced activity of grain boundary dislocations in large grains, collectively contributes to the enhancement of the strength and hardness of the GNG structure. Compared with a homogeneous nano-grained structure, the gradient nano-grained structure exhibits a more rational distribution of dislocations and stress relaxation effects to enhance strength. The present work utilizes the molecular dynamics nanoindentation method to study GNG materials, providing a methodology for investigating the surface strengthening effects of GNG structures at the atomic scale and effectively revealing potential mechanisms for resisting surface deformation in GNG structures.
{"title":"Enhancing surface strength of tungsten by gradient nano-grained structure","authors":"Daqian Xu, Zhifeng Huang, Like Xu, Guanchao Yin, Yaojun Lin, Qiang Shen, Fei Chen","doi":"10.1063/5.0191162","DOIUrl":"https://doi.org/10.1063/5.0191162","url":null,"abstract":"A gradient nano-grained (GNG) structure demonstrates satisfactory surface strength. However, the underlying mechanism responsible for its strengthening lacks sufficient research. To explain how gradient nano-grained structures improve surface strength in detail, large-scale parallel molecular dynamics simulations are utilized in this study to investigate the mechanical deformation behavior of BCC tungsten with varying grain sizes during spherical nanoindentation. The findings suggest that a well-designed gradient structure can promote rational plasticity and an appropriate distribution of internal atomic stress. The critical point of maximum stress and hardness is observed when the initial grain size is 4.5 nm, with an average grain size of 7.1 nm. The interaction between grain boundary slip and migration in small grains, along with the enhanced activity of grain boundary dislocations in large grains, collectively contributes to the enhancement of the strength and hardness of the GNG structure. Compared with a homogeneous nano-grained structure, the gradient nano-grained structure exhibits a more rational distribution of dislocations and stress relaxation effects to enhance strength. The present work utilizes the molecular dynamics nanoindentation method to study GNG materials, providing a methodology for investigating the surface strengthening effects of GNG structures at the atomic scale and effectively revealing potential mechanisms for resisting surface deformation in GNG structures.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140974789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Gautam, V. K. Maurya, V. Aggarwal, Rahul Kumar, Bheem Singh, V. P. S. Awana, B. S. Yadav, S. Ojha, R. Ganesan, S. S. Kushvaha
In the present study, we have investigated the effect of magnetic Cr doping on the transport properties of a sputtered Bi2Se3 thin film on the SrTiO3 (110) substrate. The high-resolution x-ray diffraction and Raman spectroscopy measurements revealed the growth of rhombohedral Bi2Se3 thin films. Further electronic and compositional analysis was done by x-ray photoemission spectroscopy and Rutherford backscattering spectroscopy, and the x-value was estimated to be 0.18 in the Bi2−xCrxSe3 thin film. The variation in the resistivity with temperature (2–300 K) revealed the metallic nature in undoped Bi2Se3 up to 30 K and upturn resistivity below 30 K. The Cr-doped Bi2Se3 resistivity data show a traditional semiconducting nature up to 25 K and take an abrupt upturn resistivity below 25 K. The resistivity behavior of both samples was explained by adopting a model that consists of the total resistance, a combination of bulk and surface resistance in parallel. The bulk bandgap value determined by this method is obtained to be 256 meV in an undoped Bi2Se3 thin film. Magnetoconductance data of the undoped thin film revealed a weak anti-localization (WAL) effect, while the Cr-doped thin film showed a weak localization (WL) effect at low temperatures (<50 K). At low magnetic field and low temperature, a competing nature of WAL and WL effects was prominent in the Cr-doped film. A drastic increase in the electrical resistance suggests that Cr doping can significantly modify the electrical properties of Bi2Se3 thin films, which could have potential applications in futuristic devices.
在本研究中，我们研究了磁性 Cr 掺杂对 SrTiO3 (110) 基质上溅射 Bi2Se3 薄膜传输特性的影响。高分辨率 X 射线衍射和拉曼光谱测量结果表明，生长的是斜方体 Bi2Se3 薄膜。通过 X 射线光发射光谱和卢瑟福背散射光谱进行了进一步的电子和成分分析，Bi2-xCrxSe3 薄膜的 x 值估计为 0.18。电阻率随温度（2-300 K）的变化显示，未掺杂的 Bi2Se3 在 30 K 以下具有金属性质，在 30 K 以下电阻率急剧上升。通过这种方法确定的未掺杂 Bi2Se3 薄膜的体带隙值为 256 meV。未掺杂薄膜的磁导数据显示出弱反局域（WAL）效应，而掺杂铬的薄膜在低温（<50 K）下显示出弱局域（WL）效应。在低磁场和低温条件下，掺铬薄膜的 WAL 效应和 WL 效应的竞争性质非常突出。电阻的急剧增加表明，掺杂铬可以显著改变 Bi2Se3 薄膜的电学特性，这可能会在未来设备中得到应用。
{"title":"Competitive nature of weak anti-localization and weak localization effect in Cr-doped sputtered topological insulator Bi2Se3 thin film","authors":"S. Gautam, V. K. Maurya, V. Aggarwal, Rahul Kumar, Bheem Singh, V. P. S. Awana, B. S. Yadav, S. Ojha, R. Ganesan, S. S. Kushvaha","doi":"10.1063/5.0206345","DOIUrl":"https://doi.org/10.1063/5.0206345","url":null,"abstract":"In the present study, we have investigated the effect of magnetic Cr doping on the transport properties of a sputtered Bi2Se3 thin film on the SrTiO3 (110) substrate. The high-resolution x-ray diffraction and Raman spectroscopy measurements revealed the growth of rhombohedral Bi2Se3 thin films. Further electronic and compositional analysis was done by x-ray photoemission spectroscopy and Rutherford backscattering spectroscopy, and the x-value was estimated to be 0.18 in the Bi2−xCrxSe3 thin film. The variation in the resistivity with temperature (2–300 K) revealed the metallic nature in undoped Bi2Se3 up to 30 K and upturn resistivity below 30 K. The Cr-doped Bi2Se3 resistivity data show a traditional semiconducting nature up to 25 K and take an abrupt upturn resistivity below 25 K. The resistivity behavior of both samples was explained by adopting a model that consists of the total resistance, a combination of bulk and surface resistance in parallel. The bulk bandgap value determined by this method is obtained to be 256 meV in an undoped Bi2Se3 thin film. Magnetoconductance data of the undoped thin film revealed a weak anti-localization (WAL) effect, while the Cr-doped thin film showed a weak localization (WL) effect at low temperatures (<50 K). At low magnetic field and low temperature, a competing nature of WAL and WL effects was prominent in the Cr-doped film. A drastic increase in the electrical resistance suggests that Cr doping can significantly modify the electrical properties of Bi2Se3 thin films, which could have potential applications in futuristic devices.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140972017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Dub, P. Sai, Y. Ivonyak, D. B. But, J. Kacperski, P. Prystawko, R. Kucharski, M. Słowikowski, G. Cywiński, W. Knap, S. Rumyantsev
Unscreened (ungated) plasmons in large-area grating-gate AlGaN/GaN heterostructures were studied experimentally by Fourier-transform spectroscopy. Special attention was paid to the recently discovered THz plasmonic crystal modes observed at totally depleted gated regions when plasma oscillations were localized only in ungated parts of the grating-gate structures. The frequency of these modes is still gate voltage-dependent in the limited range due to the depletion of the ungated parts located close to the gate edges. Double gate structures with an additional bottom gate were fabricated and studied to improve the gate voltage tunability of the unscreened plasmons. Since this gate is located deep below the channel, the plasmons behaved as ungated ones, but their frequency still could be tuned by this bottom gate. We show that the combined effect of the top and bottom gates allows the efficient tuning of terahertz frequencies of unscreened modes in the grating-gate AlGaN/GaN plasmonic crystals.
{"title":"Control of the unscreened modes in AlGaN/GaN terahertz plasmonic crystals","authors":"M. Dub, P. Sai, Y. Ivonyak, D. B. But, J. Kacperski, P. Prystawko, R. Kucharski, M. Słowikowski, G. Cywiński, W. Knap, S. Rumyantsev","doi":"10.1063/5.0190483","DOIUrl":"https://doi.org/10.1063/5.0190483","url":null,"abstract":"Unscreened (ungated) plasmons in large-area grating-gate AlGaN/GaN heterostructures were studied experimentally by Fourier-transform spectroscopy. Special attention was paid to the recently discovered THz plasmonic crystal modes observed at totally depleted gated regions when plasma oscillations were localized only in ungated parts of the grating-gate structures. The frequency of these modes is still gate voltage-dependent in the limited range due to the depletion of the ungated parts located close to the gate edges. Double gate structures with an additional bottom gate were fabricated and studied to improve the gate voltage tunability of the unscreened plasmons. Since this gate is located deep below the channel, the plasmons behaved as ungated ones, but their frequency still could be tuned by this bottom gate. We show that the combined effect of the top and bottom gates allows the efficient tuning of terahertz frequencies of unscreened modes in the grating-gate AlGaN/GaN plasmonic crystals.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140973756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：