Yu Gu, Nicolas Suas-David, Jordy Bouwman, Yongdong Li, Harold Linnartz
Pulsed discharge nozzles (PDNs) have been successfully used for decades to produce rotationally cold (Trot ∼ 20 K) radicals and ions of astrophysical interest and to characterize these species spectroscopically. In this work, an evolution of the PDN, the piezostack pulsed discharge nozzle (P2DN), is used for the first time to investigate the characteristics of the still poorly understood supersonic plasma expansion. The P2DN allows for a better control of the reservoir pressure of which an accurate measurement is required to characterize the plasma expansion. This new source, thus, gives the opportunity to further optimize the plasma conditions and extend its use to new target species. The spatial distribution of an argon plasma and the effect of the supersonic flow for different pressures are studied by combining a two-dimensional extended fluid model (extFM) and a direct simulation Monte Carlo (DSMC) method. The combined simulation is validated with experimental results obtained through emission spectroscopy associated with a group-code collisional-radiative model to retrieve the plasma parameters. The validated numerical approach (DSMC-extFM) allows for an accurate characterization of the plasma structure in our typical experimental conditions (a reservoir pressure ranging from 90 to 905 mbar). Thus, this simulation will be used in future studies to improve the plasma conditions to favor the synthesis of (transient) hydrocarbon species as found in space, by seeding the argon gas with a suitable precursor, such as acetylene.
{"title":"Numerical and experimental study of supersonically expanding argon plasma using a micrometer hollow cathode discharge","authors":"Yu Gu, Nicolas Suas-David, Jordy Bouwman, Yongdong Li, Harold Linnartz","doi":"10.1063/5.0207234","DOIUrl":"https://doi.org/10.1063/5.0207234","url":null,"abstract":"Pulsed discharge nozzles (PDNs) have been successfully used for decades to produce rotationally cold (Trot ∼ 20 K) radicals and ions of astrophysical interest and to characterize these species spectroscopically. In this work, an evolution of the PDN, the piezostack pulsed discharge nozzle (P2DN), is used for the first time to investigate the characteristics of the still poorly understood supersonic plasma expansion. The P2DN allows for a better control of the reservoir pressure of which an accurate measurement is required to characterize the plasma expansion. This new source, thus, gives the opportunity to further optimize the plasma conditions and extend its use to new target species. The spatial distribution of an argon plasma and the effect of the supersonic flow for different pressures are studied by combining a two-dimensional extended fluid model (extFM) and a direct simulation Monte Carlo (DSMC) method. The combined simulation is validated with experimental results obtained through emission spectroscopy associated with a group-code collisional-radiative model to retrieve the plasma parameters. The validated numerical approach (DSMC-extFM) allows for an accurate characterization of the plasma structure in our typical experimental conditions (a reservoir pressure ranging from 90 to 905 mbar). Thus, this simulation will be used in future studies to improve the plasma conditions to favor the synthesis of (transient) hydrocarbon species as found in space, by seeding the argon gas with a suitable precursor, such as acetylene.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140965512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. R. Dzhikirba, D. A. Khudaiberdiev, A. Shuvaev, A. S. Astrakhantseva, I. V. Kukushkin, V. M. Muravev
We experimentally investigate phase shift gained by electromagnetic radiation transmitted through a two-dimensional electron system (2DES) on a dielectric substrate. We systematically examined the dependence of the phase shift on the radiation frequency and 2DES electron density for the GaAs semiconductor substrate. A theoretical approach was developed that found good agreement with experimental results. We demonstrate a practically achievable phase shift of 105°. Obtained findings pave the way for the design of terahertz devices that can manipulate the radiation phase in a controlled and precise manner.
{"title":"Phase shifter based on two-dimensional electron system on a dielectric substrate","authors":"K. R. Dzhikirba, D. A. Khudaiberdiev, A. Shuvaev, A. S. Astrakhantseva, I. V. Kukushkin, V. M. Muravev","doi":"10.1063/5.0205254","DOIUrl":"https://doi.org/10.1063/5.0205254","url":null,"abstract":"We experimentally investigate phase shift gained by electromagnetic radiation transmitted through a two-dimensional electron system (2DES) on a dielectric substrate. We systematically examined the dependence of the phase shift on the radiation frequency and 2DES electron density for the GaAs semiconductor substrate. A theoretical approach was developed that found good agreement with experimental results. We demonstrate a practically achievable phase shift of 105°. Obtained findings pave the way for the design of terahertz devices that can manipulate the radiation phase in a controlled and precise manner.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140966446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Maneesha, Koyel Samantaray, Suresh Chandra Baral, R. Mittal, Mayanak K. Gupta, Somaditya Sen
Crystal structure, bandgap, and the changes in the charge conduction mechanisms in ceramics are interrelated, and the underlying physics unifies all these different phenomena. The experimental and theoretical evaluation of the electronic properties of the solid solution of (1 − x)BaTiO3–(x)LaFeO3 (x = 0, 0.015, 0.031, 0.062) is attempted in this work. Bandgap was observed to be tunable with La/Fe doping from 3.2 eV (x = 0) to 2.6 eV (x = 0.06), while the lattice disorder was found to increase. A theoretical assessment confirms a considerable shift of valence band maxima and conduction band minima with an introduction of additional defect states within the bandgap. Electron localization was also confirmed theoretically with doping. Such changes in the electronic properties were experimentally confirmed from dielectric/AC - conductivity/impedance spectroscopy studies. From different transportation models, hopping is a preferred mechanism in the less distorted BaTiO3. However, a large polaron tunneling process can be justified for the doped samples at lower temperatures. Only at higher temperatures, a small polaron tunneling can be justified for the doped samples. The transportation is affected by the grain boundaries as much as the grains themselves. A complete analysis using Nyquist plots reveals the competing contributions of these regions to the transportation mechanism and is correlated to the disorder/distortions in the lattice in terms of the formation of oxygen vacancies.
{"title":"Defect/disorder correlated modification of transport properties from hopping to tunneling processes in BaTiO3–LaFeO3 solid solution","authors":"P. Maneesha, Koyel Samantaray, Suresh Chandra Baral, R. Mittal, Mayanak K. Gupta, Somaditya Sen","doi":"10.1063/5.0195109","DOIUrl":"https://doi.org/10.1063/5.0195109","url":null,"abstract":"Crystal structure, bandgap, and the changes in the charge conduction mechanisms in ceramics are interrelated, and the underlying physics unifies all these different phenomena. The experimental and theoretical evaluation of the electronic properties of the solid solution of (1 − x)BaTiO3–(x)LaFeO3 (x = 0, 0.015, 0.031, 0.062) is attempted in this work. Bandgap was observed to be tunable with La/Fe doping from 3.2 eV (x = 0) to 2.6 eV (x = 0.06), while the lattice disorder was found to increase. A theoretical assessment confirms a considerable shift of valence band maxima and conduction band minima with an introduction of additional defect states within the bandgap. Electron localization was also confirmed theoretically with doping. Such changes in the electronic properties were experimentally confirmed from dielectric/AC - conductivity/impedance spectroscopy studies. From different transportation models, hopping is a preferred mechanism in the less distorted BaTiO3. However, a large polaron tunneling process can be justified for the doped samples at lower temperatures. Only at higher temperatures, a small polaron tunneling can be justified for the doped samples. The transportation is affected by the grain boundaries as much as the grains themselves. A complete analysis using Nyquist plots reveals the competing contributions of these regions to the transportation mechanism and is correlated to the disorder/distortions in the lattice in terms of the formation of oxygen vacancies.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140964320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zhonghua Zhao, Shuo Zhang, Mingru Li, Yang Feng, Liuqing Yang, Shengtao Li
Polymer dielectrics with excellent capacitive performance are urgently needed in advanced electrical and electronic systems. However, due to the dramatic increase in the conduction loss, the energy density and efficiency of polymers degrade severely at elevated temperatures, limiting their application in harsh environments up to 150 °C. Herein, an all-organic polyurea (PU)/polyetherimide (PEI) blend film is designed to prepare high-temperature polymer dielectric. It is found that carrier traps can be introduced by blending, and the hydrogen bond between PU and PEI increases the trap depth, leading to suppressed leakage current and enhanced breakdown strength, thus improving the energy storage performance. PU/30%PEI exhibits a high discharged energy density of ∼3.74 J/cm3 with an efficiency higher than 90% at 150 °C, which is 78% and 70% higher than pristine PU and PEI, respectively. This work provides a facile strategy to improve the energy storage performance of polymer dielectrics by introducing deep traps through blending.
先进的电气和电子系统迫切需要具有优异电容性能的聚合物电介质。然而，由于传导损耗急剧增加，聚合物的能量密度和效率在高温下严重下降，限制了它们在高达 150 °C 的恶劣环境中的应用。本文设计了一种全有机聚脲（PU）/聚醚酰亚胺（PEI）共混膜来制备高温聚合物电介质。研究发现，通过共混可以引入载流子陷阱，聚氨酯和聚醚酰亚胺之间的氢键增加了陷阱深度，从而抑制了泄漏电流，增强了击穿强度，提高了储能性能。PU/30%PEI 在 150 °C 时的放电能量密度高达 3.74 J/cm3，效率高于 90%，分别比原始 PU 和 PEI 高出 78% 和 70%。这项研究为通过共混引入深阱来提高聚合物电介质的储能性能提供了一种简便的策略。
{"title":"High-temperature dielectric with excellent capacitive performance enabled by rationally designed traps in blends","authors":"Zhonghua Zhao, Shuo Zhang, Mingru Li, Yang Feng, Liuqing Yang, Shengtao Li","doi":"10.1063/5.0208131","DOIUrl":"https://doi.org/10.1063/5.0208131","url":null,"abstract":"Polymer dielectrics with excellent capacitive performance are urgently needed in advanced electrical and electronic systems. However, due to the dramatic increase in the conduction loss, the energy density and efficiency of polymers degrade severely at elevated temperatures, limiting their application in harsh environments up to 150 °C. Herein, an all-organic polyurea (PU)/polyetherimide (PEI) blend film is designed to prepare high-temperature polymer dielectric. It is found that carrier traps can be introduced by blending, and the hydrogen bond between PU and PEI increases the trap depth, leading to suppressed leakage current and enhanced breakdown strength, thus improving the energy storage performance. PU/30%PEI exhibits a high discharged energy density of ∼3.74 J/cm3 with an efficiency higher than 90% at 150 °C, which is 78% and 70% higher than pristine PU and PEI, respectively. This work provides a facile strategy to improve the energy storage performance of polymer dielectrics by introducing deep traps through blending.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140965330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The analytical expressions for the cross-spectral density matrix elements of the partially coherent elegant Laguerre–Gaussian (eLG) vortex beam propagating through anisotropic turbulent plasma were derived based on the extended Huygens-Fresnel principle and used to study the changes in the polarization degree and the coherence degree of the partially coherent eLG vortex beam in the turbulent plasma. The numerical results show that the polarization degree of a partially coherent eLG vortex beam reaches a specific value (which is equal to the degree of polarization in the source plane) after a long propagation distance in the turbulent plasma. Moreover, this value is independent of the beam order, topological charge, correlation coefficient, wavelength of the source plane, anisotropy parameter, refractive index fluctuation variance, and outer and inner scales of the turbulent plasma. The results also show that with increasing distance, the coherence degree first decreases from unity and then oscillates around zero. However, this oscillation gradually disappears after traveling a long distance. Our results intuitively present the beam polarization and coherence properties through anisotropic hypersonic turbulence, which can be useful for optical communication in hypersonic turbulent environments.
{"title":"Polarization and coherence properties of a partially coherent elegant Laguerre–Gaussian vortex beam in turbulent plasma","authors":"Labiba F. Hassan, A. Alkelly, M. Khaled","doi":"10.1063/5.0206079","DOIUrl":"https://doi.org/10.1063/5.0206079","url":null,"abstract":"The analytical expressions for the cross-spectral density matrix elements of the partially coherent elegant Laguerre–Gaussian (eLG) vortex beam propagating through anisotropic turbulent plasma were derived based on the extended Huygens-Fresnel principle and used to study the changes in the polarization degree and the coherence degree of the partially coherent eLG vortex beam in the turbulent plasma. The numerical results show that the polarization degree of a partially coherent eLG vortex beam reaches a specific value (which is equal to the degree of polarization in the source plane) after a long propagation distance in the turbulent plasma. Moreover, this value is independent of the beam order, topological charge, correlation coefficient, wavelength of the source plane, anisotropy parameter, refractive index fluctuation variance, and outer and inner scales of the turbulent plasma. The results also show that with increasing distance, the coherence degree first decreases from unity and then oscillates around zero. However, this oscillation gradually disappears after traveling a long distance. Our results intuitively present the beam polarization and coherence properties through anisotropic hypersonic turbulence, which can be useful for optical communication in hypersonic turbulent environments.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140963006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chenyang Huangfu, Yufei Zhang, Jinchen Hao, G. Jia, Haitao Wu, Xujie Wang, Wei Wang, Kaiyue Wang
In this work, nitrogen vacancy (NV) centers of high nitrogen diamond implanted with arsenic ions were investigated by photoluminescence spectroscopy. The transition of the NV center charge state was discussed by the regularly changing laser excitation power and measurement temperature following high-temperature annealing. After high-temperature annealing, the amorphous layer generated by arsenic ion implantation is transformed into a graphitization layer, resulting in a decrease in the NV yield. The electric neutral NV (NV0) center and negatively charged NV (NV−) center are affected by both radiation recombination and Auger recombination with increasing laser power. Accompanied by the increasing measurement temperature, the intensities of NV centers gradually decreased and eventually quenched. In addition, the charge states of NV− and NV0 centers were undergoing a transition. The zero phonon line positions of NV centers were also red shift, it was attributed to the dominant role of electron–phonon interaction in the temperature-dependent displacement of diamond energy gaps. The full width at half maxima of NV center were broadened significantly at higher temperatures.
{"title":"Photoluminescence studies of the charge states of nitrogen vacancy centers in diamond after arsenic ion implantation and subsequent annealing","authors":"Chenyang Huangfu, Yufei Zhang, Jinchen Hao, G. Jia, Haitao Wu, Xujie Wang, Wei Wang, Kaiyue Wang","doi":"10.1063/5.0189911","DOIUrl":"https://doi.org/10.1063/5.0189911","url":null,"abstract":"In this work, nitrogen vacancy (NV) centers of high nitrogen diamond implanted with arsenic ions were investigated by photoluminescence spectroscopy. The transition of the NV center charge state was discussed by the regularly changing laser excitation power and measurement temperature following high-temperature annealing. After high-temperature annealing, the amorphous layer generated by arsenic ion implantation is transformed into a graphitization layer, resulting in a decrease in the NV yield. The electric neutral NV (NV0) center and negatively charged NV (NV−) center are affected by both radiation recombination and Auger recombination with increasing laser power. Accompanied by the increasing measurement temperature, the intensities of NV centers gradually decreased and eventually quenched. In addition, the charge states of NV− and NV0 centers were undergoing a transition. The zero phonon line positions of NV centers were also red shift, it was attributed to the dominant role of electron–phonon interaction in the temperature-dependent displacement of diamond energy gaps. The full width at half maxima of NV center were broadened significantly at higher temperatures.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140965789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Valloire, P. Quéméré, N. Vaxelaire, H. Kuentz, G. Le Rhun, Ł. Borowik
Switching Spectroscopy Piezoresponse Force Microscopy (SSPFM) stands out as a powerful method for probing ferroelectric properties within materials subjected to incremental polarization induced by an external electric field. However, the dense data processing linked to this technique is a critical factor influencing the quality of obtained results. Furthermore, meticulous exploration of various artifacts, such as electrostatics, which may considerably influence the signal, is a key factor in obtaining quantitative results. In this paper, we present a global methodology for SSPFM data processing, accessible in open-source with a user-friendly Python application called PySSPFM. A ferroelectric thin film sample of potassium sodium niobate has been probed to illustrate the different aspects of our methodology. Our approach enables the reconstruction of hysteresis nano-loops by determining the PR as a function of applied electric field. These hysteresis loops are then fitted to extract characteristic parameters that serve as measures of the ferroelectric properties of the sample. Various artifact decorrelation methods are employed to enhance measurement accuracy, and additional material properties can be assessed. Performing this procedure on a grid of points across the surface of the sample enables the creation of spatial maps. Furthermore, different techniques have been proposed to facilitate post-treatment analysis, incorporating algorithms for machine learning (K-means), phase separation, and mapping cross correlation, among others. Additionally, PySSPFM enables a more in-depth investigation of the material by studying the nanomechanical properties during poling, through the measurement of the resonance properties of the cantilever–tip–sample surface system.
{"title":"Enhancing ferroelectric characterization at nanoscale: A comprehensive approach for data processing in spectroscopic piezoresponse force microscopy","authors":"H. Valloire, P. Quéméré, N. Vaxelaire, H. Kuentz, G. Le Rhun, Ł. Borowik","doi":"10.1063/5.0197226","DOIUrl":"https://doi.org/10.1063/5.0197226","url":null,"abstract":"Switching Spectroscopy Piezoresponse Force Microscopy (SSPFM) stands out as a powerful method for probing ferroelectric properties within materials subjected to incremental polarization induced by an external electric field. However, the dense data processing linked to this technique is a critical factor influencing the quality of obtained results. Furthermore, meticulous exploration of various artifacts, such as electrostatics, which may considerably influence the signal, is a key factor in obtaining quantitative results. In this paper, we present a global methodology for SSPFM data processing, accessible in open-source with a user-friendly Python application called PySSPFM. A ferroelectric thin film sample of potassium sodium niobate has been probed to illustrate the different aspects of our methodology. Our approach enables the reconstruction of hysteresis nano-loops by determining the PR as a function of applied electric field. These hysteresis loops are then fitted to extract characteristic parameters that serve as measures of the ferroelectric properties of the sample. Various artifact decorrelation methods are employed to enhance measurement accuracy, and additional material properties can be assessed. Performing this procedure on a grid of points across the surface of the sample enables the creation of spatial maps. Furthermore, different techniques have been proposed to facilitate post-treatment analysis, incorporating algorithms for machine learning (K-means), phase separation, and mapping cross correlation, among others. Additionally, PySSPFM enables a more in-depth investigation of the material by studying the nanomechanical properties during poling, through the measurement of the resonance properties of the cantilever–tip–sample surface system.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140965782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Aditya K. Bhat, Hyun-Seop Kim, Abhishek Mishra, Matthew D. Smith, Michael J. Uren, Martin Kuball
A ledge feature in the capacitance–voltage (CV) profiles of Ga2O3 MOS (metal–oxide–semiconductor) capacitors is investigated using UV-assisted CV measurements. A model is presented whereby the capacitance ledge is associated with carrier trapping in deep-level states at the Al2O3/Ga2O3 interface. Following UV assisted emptying of interface traps at a constant bias, a voltage ramp toward flatband results in a CV ledge when the trap recombination current becomes equal to the quasi-static sweep charging current. The ledge continues until all the traps below the corresponding pinned surface potential have been filled. Varying the UV energy varies the ledge voltage range and allows a density of states to be determined as a function of energy. A broad interface state peak with maximum density ∼8 × 1012 cm−2 eV−1 for deep trap energies lying between 2.4 and 4.1 eV below the conduction band (CB) edge is extracted. Using the conductance method, the interface trap density is also found to rise toward the CB edge in the range 0.25–0.45 eV below the CB edge, reaching a maximum density of ∼1 × 1012 cm−2 eV−1. Combining these two techniques, an interface trap distribution is estimated for almost the entirety of the bandgap of Ga2O3. This novel technique probes deep interface states where standard methods fail to quantify interface states reliably.
{"title":"Analysis of interface trap induced ledge in β-Ga2O3 based MOS structures using UV-assisted capacitance–voltage measurements","authors":"Aditya K. Bhat, Hyun-Seop Kim, Abhishek Mishra, Matthew D. Smith, Michael J. Uren, Martin Kuball","doi":"10.1063/5.0203022","DOIUrl":"https://doi.org/10.1063/5.0203022","url":null,"abstract":"A ledge feature in the capacitance–voltage (CV) profiles of Ga2O3 MOS (metal–oxide–semiconductor) capacitors is investigated using UV-assisted CV measurements. A model is presented whereby the capacitance ledge is associated with carrier trapping in deep-level states at the Al2O3/Ga2O3 interface. Following UV assisted emptying of interface traps at a constant bias, a voltage ramp toward flatband results in a CV ledge when the trap recombination current becomes equal to the quasi-static sweep charging current. The ledge continues until all the traps below the corresponding pinned surface potential have been filled. Varying the UV energy varies the ledge voltage range and allows a density of states to be determined as a function of energy. A broad interface state peak with maximum density ∼8 × 1012 cm−2 eV−1 for deep trap energies lying between 2.4 and 4.1 eV below the conduction band (CB) edge is extracted. Using the conductance method, the interface trap density is also found to rise toward the CB edge in the range 0.25–0.45 eV below the CB edge, reaching a maximum density of ∼1 × 1012 cm−2 eV−1. Combining these two techniques, an interface trap distribution is estimated for almost the entirety of the bandgap of Ga2O3. This novel technique probes deep interface states where standard methods fail to quantify interface states reliably.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140963091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The integration of Au nanorods in tip-enhanced Raman spectroscopy (TERS) presents a significant increase in the enhancement factor, primarily due to the gap-mode effect. By aligning Au nanorods in parallel, we construct an Au nanorod lattice, referred to as the Au nanolattice, which further amplifies the advantages of TERS imaging due to the induced inter-nanorod surface plasmon resonance. A critical aspect in this research involves investigating the distribution of hotspots within the nanolattice during TERS measurements. Additionally, we demonstrate that the tip–lattice nanocavity is a predominant factor in determining both the intensity and spatial distribution of these hotspots. Employing the experimental and simulation results, we illustrate the enhancement effect of the tip–lattice cavity and elucidate the connection between the hotspot intensity and cavity size. This comprehensive approach contributes to our understanding of the nano-lattice’s role in TERS and offers valuable insights for optimizing nanophotonic applications.
在尖端增强拉曼光谱（TERS）中集成金纳米棒可显著提高增强因子，这主要是由于间隙模式效应。通过平行排列金纳米棒，我们构建了一个金纳米棒晶格（称为金纳米晶格），由于金纳米棒之间的表面等离子体共振，它进一步放大了 TERS 成像的优势。这项研究的一个重要方面是调查 TERS 测量过程中纳米晶格内的热点分布。此外，我们还证明了尖端晶格纳米腔体是决定这些热点的强度和空间分布的主要因素。利用实验和模拟结果，我们说明了尖端晶格空腔的增强效应，并阐明了热点强度与空腔尺寸之间的联系。这种综合方法有助于我们理解纳米晶格在 TERS 中的作用，并为优化纳米光子应用提供了宝贵的见解。
{"title":"Imaging spatial plasmon mode of nanocavity formed by Au tip and Au nanorod lattice in tip-enhanced Raman spectroscopy","authors":"Zhe He, Jue Wang, Rui Wang, Dmitry Kurouski","doi":"10.1063/5.0199473","DOIUrl":"https://doi.org/10.1063/5.0199473","url":null,"abstract":"The integration of Au nanorods in tip-enhanced Raman spectroscopy (TERS) presents a significant increase in the enhancement factor, primarily due to the gap-mode effect. By aligning Au nanorods in parallel, we construct an Au nanorod lattice, referred to as the Au nanolattice, which further amplifies the advantages of TERS imaging due to the induced inter-nanorod surface plasmon resonance. A critical aspect in this research involves investigating the distribution of hotspots within the nanolattice during TERS measurements. Additionally, we demonstrate that the tip–lattice nanocavity is a predominant factor in determining both the intensity and spatial distribution of these hotspots. Employing the experimental and simulation results, we illustrate the enhancement effect of the tip–lattice cavity and elucidate the connection between the hotspot intensity and cavity size. This comprehensive approach contributes to our understanding of the nano-lattice’s role in TERS and offers valuable insights for optimizing nanophotonic applications.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140962414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Gautam, M. Pan, Y. Chen, T. Rotter, G. Balakrishnan, W. Zhou
We propose and investigate a novel coherent laser array design based on laterally coupled photonic crystal surface-emitting lasers (PCSELs). As a new type of semiconductor laser technology, PCSELs have field confinement in a planar cavity and laser beam emission in the surface normal direction. By engineering lateral couplings between PCSELs with heterostructure photonic crystal designs, we can achieve coherent operations from an array of PCSELs. In this paper, we demonstrate coherent operation from a passively coupled PCSEL array design. We fabricated PCSEL array devices on a GaAs-based quantum well heterostructure at a target wavelength of 1040 nm. Experimental results show that the 2-by-2 PCSEL arrays have spectral linewidth of 0.14–0.22 nm. Beam combining performance was characterized by self-interference experiments. Similar coherency between the PCSEL array and single PCSEL device was observed. Our compact PCSEL array designs by passive lateral coupling have potential applications in fields of on-chip photonic computing, quantum, and information processing.
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