Andrew O’Hara, Ronald D. Schrimpf, Daniel M. Fleetwood, Sokrates T. Pantelides
Irradiation of semiconductors by energetic beams generates excess electrons and holes and may cause device degradation or failure. Both gradual degradation by total ionizing radiation (TID) and sudden degradation/failure (soft/hard breakdown) by a combination of energetic heavy ions and high voltages (typically single-event effects or SEEs) are mediated by excess carriers. The role of defect dynamics in TID degradation has been adequately understood by a combination of experiments and density-functional-theory (DFT) quantum calculations, but little has been done so far to document a role for ion-induced defects in SEE. Here, we report proof-of-principle DFT calculations in a model cubic GaN system for two defect-related excess-carrier phenomena that can play a role in various forms of device degradation and failure. The first phenomenon is the existence, dynamics, and potential roles of defect-induced quasi-localized “resonant states” in the energy-band continua. These states can enhance TID-excess-carrier and hot-carrier degradation. Furthermore, they evolve and multiply during energetic-ion-induced atom recoils and defect creation (displacement damage) and can potentially serve as excess-carrier conduction paths in SEE. The second phenomenon is the conversion of isolated vacancies into nanovoids that can participate in the formation of conducting defect “nanowires” dressed by resonances or in explosive SEE hard breakdowns.
高能束辐照半导体会产生过量电子和空穴，并可能导致器件降解或失效。无论是全电离辐射（TID）导致的渐进降解，还是高能重离子和高电压组合导致的突然降解/失效（软/硬击穿）（典型的单次事件效应或 SEE），都是由过剩载流子介导的。缺陷动力学在 TID 降解中的作用已通过实验和密度泛函理论（DFT）量子计算得到充分理解，但迄今为止，在记录离子诱导缺陷在 SEE 中的作用方面所做的工作还很少。在此，我们报告了在一个模型立方氮化镓系统中对两种与缺陷相关的过剩载流子现象进行的原理性 DFT 计算，这两种现象可能在各种形式的器件降解和失效中发挥作用。第一种现象是能带连续体中缺陷诱导的准局域 "共振态 "的存在、动力学和潜在作用。这些态会增强 TID 超载流子和热载流子降解。此外，在高能离子诱导的原子反冲和缺陷产生（位移损伤）过程中，这些态会发生演变和增殖，并有可能成为 SEE 中的过剩载流子传导路径。第二种现象是孤立空位转化为纳米空位，它们可参与形成由共振或爆炸性 SEE 硬击穿穿戴的导电缺陷 "纳米线"。
{"title":"Defect dynamics in the presence of excess energetic carriers and high electric fields in wide-gap semiconductors","authors":"Andrew O’Hara, Ronald D. Schrimpf, Daniel M. Fleetwood, Sokrates T. Pantelides","doi":"10.1063/5.0203047","DOIUrl":"https://doi.org/10.1063/5.0203047","url":null,"abstract":"Irradiation of semiconductors by energetic beams generates excess electrons and holes and may cause device degradation or failure. Both gradual degradation by total ionizing radiation (TID) and sudden degradation/failure (soft/hard breakdown) by a combination of energetic heavy ions and high voltages (typically single-event effects or SEEs) are mediated by excess carriers. The role of defect dynamics in TID degradation has been adequately understood by a combination of experiments and density-functional-theory (DFT) quantum calculations, but little has been done so far to document a role for ion-induced defects in SEE. Here, we report proof-of-principle DFT calculations in a model cubic GaN system for two defect-related excess-carrier phenomena that can play a role in various forms of device degradation and failure. The first phenomenon is the existence, dynamics, and potential roles of defect-induced quasi-localized “resonant states” in the energy-band continua. These states can enhance TID-excess-carrier and hot-carrier degradation. Furthermore, they evolve and multiply during energetic-ion-induced atom recoils and defect creation (displacement damage) and can potentially serve as excess-carrier conduction paths in SEE. The second phenomenon is the conversion of isolated vacancies into nanovoids that can participate in the formation of conducting defect “nanowires” dressed by resonances or in explosive SEE hard breakdowns.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":"9 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140970129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Amanda Langørgen, Lasse Vines, Y. Kalmann Frodason
The ultra-wide bandgap of gallium oxide provides a rich plethora of electrically active defects. Understanding and controlling such defects is of crucial importance in mature device processing. Deep-level transient spectroscopy is one of the most sensitive techniques for measuring electrically active defects in semiconductors and, hence, a key technique for progress toward gallium oxide-based components, including Schottky barrier diodes and field-effect transistors. However, deep-level transient spectroscopy does not provide chemical or configurational information about the defect signature and must, therefore, be combined with other experimental techniques or theoretical modeling to gain a deeper understanding of the defect physics. Here, we discuss the current status regarding the identification of electrically active defects in beta-phase gallium oxide, as observed by deep-level transient spectroscopy and supported by first-principles defect calculations based on the density functional theory. We also discuss the coordinated use of the experiment and theory as a powerful approach for studying electrically active defects and highlight some of the interesting but challenging issues related to the characterization and control of defects in this fascinating material.
{"title":"Perspective on electrically active defects in β-Ga2O3 from deep-level transient spectroscopy and first-principles calculations","authors":"Amanda Langørgen, Lasse Vines, Y. Kalmann Frodason","doi":"10.1063/5.0205950","DOIUrl":"https://doi.org/10.1063/5.0205950","url":null,"abstract":"The ultra-wide bandgap of gallium oxide provides a rich plethora of electrically active defects. Understanding and controlling such defects is of crucial importance in mature device processing. Deep-level transient spectroscopy is one of the most sensitive techniques for measuring electrically active defects in semiconductors and, hence, a key technique for progress toward gallium oxide-based components, including Schottky barrier diodes and field-effect transistors. However, deep-level transient spectroscopy does not provide chemical or configurational information about the defect signature and must, therefore, be combined with other experimental techniques or theoretical modeling to gain a deeper understanding of the defect physics. Here, we discuss the current status regarding the identification of electrically active defects in beta-phase gallium oxide, as observed by deep-level transient spectroscopy and supported by first-principles defect calculations based on the density functional theory. We also discuss the coordinated use of the experiment and theory as a powerful approach for studying electrically active defects and highlight some of the interesting but challenging issues related to the characterization and control of defects in this fascinating material.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":"15 7","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140967714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thermal transport plays a pivotal role across diverse disciplines, yet the intricate relationship between amorphous network structures and thermal conductance properties remains elusive due to the absence of a reliable and comprehensive network’s dataset to be investigated. In this study, we have created a dataset comprising multiple amorphous network structures of varying sizes, generated through a combination of the node disturbance method and Delaunay triangulation, to fine-tune an initially random network toward both increased and decreased thermal conductance C. The tuning process is guided by the simulated annealing algorithm. Our findings unveil that C is inversely dependent on the normalized average shortest distance Lnorm connecting heat source nodes and sink nodes, which is determined by the network topological structure. Intuitively, the amorphous network with increased C is associated with an increased number of bonds oriented along the thermal transport direction, which shortens the heat transfer distance from the source to sink node. Conversely, thermal transport encounters impedance with an augmented number of bonds oriented perpendicular to the thermal transport direction, which is demonstrated by the increased Lnorm. This relationship can be described by a power law C=Lnormα, applicable to the diverse-sized amorphous networks we have investigated.
{"title":"Machine learning aided understanding and manipulating thermal transport in amorphous networks","authors":"Changliang Zhu, Tianlin Luo, Baowen Li, Xiangying Shen, Guimei Zhu","doi":"10.1063/5.0200779","DOIUrl":"https://doi.org/10.1063/5.0200779","url":null,"abstract":"Thermal transport plays a pivotal role across diverse disciplines, yet the intricate relationship between amorphous network structures and thermal conductance properties remains elusive due to the absence of a reliable and comprehensive network’s dataset to be investigated. In this study, we have created a dataset comprising multiple amorphous network structures of varying sizes, generated through a combination of the node disturbance method and Delaunay triangulation, to fine-tune an initially random network toward both increased and decreased thermal conductance C. The tuning process is guided by the simulated annealing algorithm. Our findings unveil that C is inversely dependent on the normalized average shortest distance Lnorm connecting heat source nodes and sink nodes, which is determined by the network topological structure. Intuitively, the amorphous network with increased C is associated with an increased number of bonds oriented along the thermal transport direction, which shortens the heat transfer distance from the source to sink node. Conversely, thermal transport encounters impedance with an augmented number of bonds oriented perpendicular to the thermal transport direction, which is demonstrated by the increased Lnorm. This relationship can be described by a power law C=Lnormα, applicable to the diverse-sized amorphous networks we have investigated.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":"29 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140967367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuto Fujita, Norihiko Hayazawa, Maria Vanessa Balois-Oguchi, Takuo Tanaka, Tomoko K. Shimizu
We observed a modification of transition pathways in polarized resonance Raman spectroscopy during tip-enhanced Raman spectroscopy (TERS) analysis of metallic carbon nanotubes (CNTs). At a spatial resolution reaching up to the sub-nanometer regime, the signal intensity of the typical D-band is observed to be even higher than the intensity of the G-band all over the probed CNTs in TERS imaging. The measured D-band is attributed to the non-vertical transitions of electrons in k-space that are facilitated by highly confined near-field light at the tip–sample junction of our scanning tunneling microscope based TERS system. The D-band signal was observed even when the CNTs were excited by light polarized perpendicular to the tube axis that corresponds to electronic excitations between different cutting line numbers of a CNT. By combining the electron pathways brought about by both the near-field light and its polarization, we found a unique optical transition of electrons of CNTs in near-field Raman spectroscopy.
在对金属碳纳米管（CNTs）进行针尖增强拉曼光谱（TERS）分析时，我们观察到偏振共振拉曼光谱的转变路径发生了变化。在空间分辨率达到亚纳米级的情况下，在 TERS 成像中观察到典型的 D 波段信号强度甚至高于整个探测 CNT 的 G 波段信号强度。测量到的 D 波段归因于电子在 k 空间的非垂直跃迁，这种跃迁在我们基于扫描隧道显微镜的 TERS 系统的尖端-样品交界处的高度约束近场光中得到了促进。即使 CNT 被垂直于管轴的偏振光激发，也能观察到 D 波段信号，这与 CNT 不同切割线数之间的电子激发相对应。通过结合近场光及其偏振带来的电子路径，我们发现了近场拉曼光谱中独特的 CNT 电子光学转变。
{"title":"Modification of transition pathways in polarized resonance Raman spectroscopy for carbon nanotubes by highly confined near-field light","authors":"Yuto Fujita, Norihiko Hayazawa, Maria Vanessa Balois-Oguchi, Takuo Tanaka, Tomoko K. Shimizu","doi":"10.1063/5.0204121","DOIUrl":"https://doi.org/10.1063/5.0204121","url":null,"abstract":"We observed a modification of transition pathways in polarized resonance Raman spectroscopy during tip-enhanced Raman spectroscopy (TERS) analysis of metallic carbon nanotubes (CNTs). At a spatial resolution reaching up to the sub-nanometer regime, the signal intensity of the typical D-band is observed to be even higher than the intensity of the G-band all over the probed CNTs in TERS imaging. The measured D-band is attributed to the non-vertical transitions of electrons in k-space that are facilitated by highly confined near-field light at the tip–sample junction of our scanning tunneling microscope based TERS system. The D-band signal was observed even when the CNTs were excited by light polarized perpendicular to the tube axis that corresponds to electronic excitations between different cutting line numbers of a CNT. By combining the electron pathways brought about by both the near-field light and its polarization, we found a unique optical transition of electrons of CNTs in near-field Raman spectroscopy.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":"127 47","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140977479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kaixin Deng, Libin Zeng, Yao Pan, Yonglei Jia, Yiming Luo, Yunfeng Tao, Jie Yuan
The hemispherical shell resonator (HSR) is the core element of the hemispherical resonator gyroscope (HRG), and its frequency mismatch is a key property influencing gyroscope accuracy. Investigating the mechanism of frequency mismatch is vital for improving the quality of HSRs and performance of HRGs. Midsurface radius imperfections and thickness imperfections are two principal causes of frequency mismatch, but their combined effects have rarely been discussed. This paper develops a model to comprehensively analyze the frequency mismatch of HSRs with both radius and thickness imperfections. The model derives a quantitative relation between the frequency mismatch and the two imperfections, and provides principles for evaluating dominant imperfections. To validate the model, we conduct experiments on a batch of 12 HSRs with random geometric imperfections. We apply the model in calculating the theoretical frequency mismatches of these HSRs, and the results agree well with the experimental data. The experiment also confirms that for macro-HSRs, thickness imperfections have a larger impact than radius imperfections, and the frequency mismatch is approximately linear to the fourth thickness harmonic. Our research can be a useful reference for the design and fabrication of HSRs and may open new possibilities for high-precision manufacture of HRGs.
{"title":"Frequency mismatch analysis of hemispherical shell resonators with both radius and thickness imperfections","authors":"Kaixin Deng, Libin Zeng, Yao Pan, Yonglei Jia, Yiming Luo, Yunfeng Tao, Jie Yuan","doi":"10.1063/5.0202421","DOIUrl":"https://doi.org/10.1063/5.0202421","url":null,"abstract":"The hemispherical shell resonator (HSR) is the core element of the hemispherical resonator gyroscope (HRG), and its frequency mismatch is a key property influencing gyroscope accuracy. Investigating the mechanism of frequency mismatch is vital for improving the quality of HSRs and performance of HRGs. Midsurface radius imperfections and thickness imperfections are two principal causes of frequency mismatch, but their combined effects have rarely been discussed. This paper develops a model to comprehensively analyze the frequency mismatch of HSRs with both radius and thickness imperfections. The model derives a quantitative relation between the frequency mismatch and the two imperfections, and provides principles for evaluating dominant imperfections. To validate the model, we conduct experiments on a batch of 12 HSRs with random geometric imperfections. We apply the model in calculating the theoretical frequency mismatches of these HSRs, and the results agree well with the experimental data. The experiment also confirms that for macro-HSRs, thickness imperfections have a larger impact than radius imperfections, and the frequency mismatch is approximately linear to the fourth thickness harmonic. Our research can be a useful reference for the design and fabrication of HSRs and may open new possibilities for high-precision manufacture of HRGs.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":"21 7","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140975479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper reports on the application of a near-infrared (NIR) imaging system for visualizing heat transfer dynamics from a bulk gadolinium (Gd) sample to the surrounding water during the magnetization/demagnetization process of the magnetocaloric effect (MCE). The suggested approach relied on the spectral variation in water absorption band at 1150 nm wavelength within the NIR spectrum. An experimental setup integrated a telecentric uniform-illumination system, a halogen lamp, and an NIR camera to enable real-time monitoring of a single magnetization and demagnetization cycle induced by an external magnetic field, which was generated by a permanent-magnet-based magnetic circuit. Two-dimensional absorbance images captured during this cycle clearly depicted the thermal energy generated by the MCE in water. Furthermore, an analysis of the thermal boundary layer and the quantification of heat transfer from Gd to water provided insights into the dynamics over time. These results indicated the potential of our NIR imaging techniques in optimizing thermal–fluid interactions within MCE systems, thereby improving the design and efficiency of magnetic refrigeration systems.
{"title":"Near-infrared imaging of heat transfer behavior between gadolinium and fluid during magnetization/demagnetization process of magnetocaloric effect","authors":"T. Nguyen, Naoto Kakuta, K. Uchida, Hosei Nagano","doi":"10.1063/5.0207290","DOIUrl":"https://doi.org/10.1063/5.0207290","url":null,"abstract":"This paper reports on the application of a near-infrared (NIR) imaging system for visualizing heat transfer dynamics from a bulk gadolinium (Gd) sample to the surrounding water during the magnetization/demagnetization process of the magnetocaloric effect (MCE). The suggested approach relied on the spectral variation in water absorption band at 1150 nm wavelength within the NIR spectrum. An experimental setup integrated a telecentric uniform-illumination system, a halogen lamp, and an NIR camera to enable real-time monitoring of a single magnetization and demagnetization cycle induced by an external magnetic field, which was generated by a permanent-magnet-based magnetic circuit. Two-dimensional absorbance images captured during this cycle clearly depicted the thermal energy generated by the MCE in water. Furthermore, an analysis of the thermal boundary layer and the quantification of heat transfer from Gd to water provided insights into the dynamics over time. These results indicated the potential of our NIR imaging techniques in optimizing thermal–fluid interactions within MCE systems, thereby improving the design and efficiency of magnetic refrigeration systems.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":"26 10","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140975515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wenting Lu, Bo Huang, Shansi Liao, Penghua Liu, Hui Lv, Jiayi Wu, Jun Yi, Qing Wang, Gang Wang
Metallic glasses (MGs) are of high strength but limited plasticity at room temperature (RT) due to localized shear in the intrinsically heterogeneous structure. Here, we investigate the variation of structural heterogeneity and plasticity of a Zr-based MG after high-temperature (T) tension under different stresses (σ) at 579 K (0.9Tg, where Tg is the glass transition temperature). The correlation length (ξ) of the heterogeneous structure and the average Young's modulus (E¯) increase with σ when σ is below 160 MPa; when σ exceeds 160 MPa, both ξ and E¯ decrease with σ, leading to the improvement of the plasticity. This research could be enlightening for improving the plasticity of MGs at RT through tuning their structural heterogeneity with high-T deformation.
{"title":"Structural heterogeneity and plasticity of a Zr-based metallic glass modulated by high-temperature deformation","authors":"Wenting Lu, Bo Huang, Shansi Liao, Penghua Liu, Hui Lv, Jiayi Wu, Jun Yi, Qing Wang, Gang Wang","doi":"10.1063/5.0204346","DOIUrl":"https://doi.org/10.1063/5.0204346","url":null,"abstract":"Metallic glasses (MGs) are of high strength but limited plasticity at room temperature (RT) due to localized shear in the intrinsically heterogeneous structure. Here, we investigate the variation of structural heterogeneity and plasticity of a Zr-based MG after high-temperature (T) tension under different stresses (σ) at 579 K (0.9Tg, where Tg is the glass transition temperature). The correlation length (ξ) of the heterogeneous structure and the average Young's modulus (E¯) increase with σ when σ is below 160 MPa; when σ exceeds 160 MPa, both ξ and E¯ decrease with σ, leading to the improvement of the plasticity. This research could be enlightening for improving the plasticity of MGs at RT through tuning their structural heterogeneity with high-T deformation.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":"50 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140975222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shizuka Suzuki, Takuro Dazai, T. Tokunaga, Takahisa Yamamoto, Ryuzi Katoh, M. Lippmaa, Ryota Takahashi
We have investigated the He buffer gas process of moderating the kinetic energy of the pulsed laser deposition (PLD) plume during EuxY2−xO3 phosphor film growth. When using a neodymium yttrium aluminum garnet laser for PLD thin film growth, the kinetic energy of the ablation plumes can be high enough to cause the formation of point defects in the film. The buffer gas pressure is an important process parameter in PLD film growth. We find that the presence of the He buffer gas reduces the kinetic energy of the laser deposition plume through many low-angle collisions in the gas phase by a factor of 7 without reducing the deposition rate. This is because He is much lighter than any of the elements in the plume and it does not affect the composition of the oxide films. Consequently, the resputtering of the Y2O3 film surface by the plume was significantly suppressed in the presence of the He gas moderator, leading to a decrease of the defect density in the Y2O3 films. The improvement of the film quality was verified by a systematic analysis of time-resolved photoluminescence (PL) data for EuxY2−xO3 composition–gradient films. The PL lifetime and intensity of Eu0.2Y1.8O3, which shows the highest PL intensity, increased by 13.3% and 36.4%, respectively, when the He gas moderation process was used. The He buffer gas process is applicable to the PLD growth of the other oxide materials as well, where the reduction of the kinetic energy of the plume would bring the PLD process closer to the molecular beam epitaxy growth condition.
{"title":"The use of He buffer gas for moderating the plume kinetic energy during Nd:YAG-PLD growth of EuxY2−xO3 phosphor films","authors":"Shizuka Suzuki, Takuro Dazai, T. Tokunaga, Takahisa Yamamoto, Ryuzi Katoh, M. Lippmaa, Ryota Takahashi","doi":"10.1063/5.0196987","DOIUrl":"https://doi.org/10.1063/5.0196987","url":null,"abstract":"We have investigated the He buffer gas process of moderating the kinetic energy of the pulsed laser deposition (PLD) plume during EuxY2−xO3 phosphor film growth. When using a neodymium yttrium aluminum garnet laser for PLD thin film growth, the kinetic energy of the ablation plumes can be high enough to cause the formation of point defects in the film. The buffer gas pressure is an important process parameter in PLD film growth. We find that the presence of the He buffer gas reduces the kinetic energy of the laser deposition plume through many low-angle collisions in the gas phase by a factor of 7 without reducing the deposition rate. This is because He is much lighter than any of the elements in the plume and it does not affect the composition of the oxide films. Consequently, the resputtering of the Y2O3 film surface by the plume was significantly suppressed in the presence of the He gas moderator, leading to a decrease of the defect density in the Y2O3 films. The improvement of the film quality was verified by a systematic analysis of time-resolved photoluminescence (PL) data for EuxY2−xO3 composition–gradient films. The PL lifetime and intensity of Eu0.2Y1.8O3, which shows the highest PL intensity, increased by 13.3% and 36.4%, respectively, when the He gas moderation process was used. The He buffer gas process is applicable to the PLD growth of the other oxide materials as well, where the reduction of the kinetic energy of the plume would bring the PLD process closer to the molecular beam epitaxy growth condition.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":"51 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140973771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiaoteng Sun, Lili Gui, Hailun Xie, Yiwen Liu, Kun Xu
Optical metasurfaces, artificial planar nanostructures composed of subwavelength meta-atoms, have attracted significant attention due to their ability to tailor optical nanoscale properties, making them a versatile platform for shaping light in both linear and nonlinear regimes. This paper reports on the realization of second harmonic generation (SHG) enhancement based on a dolmen-type gold metasurface containing two resonances. Nonlinear scattering theory is employed to numerically investigate the SHG enhancement phenomenon in the resonant metasurface. The periodic dolmen-type gold metasurface introduces a diffraction coupling effect between Fano resonance and surface lattice resonance (SLR), providing strong local-field enhancement and significantly enhancing the nonlinear effect. We analyze the influence of the coupling between Fano resonance and SLR on the SHG intensity and achieve a 230-fold enhancement in SHG intensity compared to the single resonance case by adjusting the periodicity of the metasurface. The SHG-enhanced gold metasurface may find applications in sensing, imaging, optical computing, and integrated nonlinear optics.
{"title":"230-fold Enhancement of second-harmonic generation by coupled double resonances in a dolmen-type gold metasurface","authors":"Xiaoteng Sun, Lili Gui, Hailun Xie, Yiwen Liu, Kun Xu","doi":"10.1063/5.0205205","DOIUrl":"https://doi.org/10.1063/5.0205205","url":null,"abstract":"Optical metasurfaces, artificial planar nanostructures composed of subwavelength meta-atoms, have attracted significant attention due to their ability to tailor optical nanoscale properties, making them a versatile platform for shaping light in both linear and nonlinear regimes. This paper reports on the realization of second harmonic generation (SHG) enhancement based on a dolmen-type gold metasurface containing two resonances. Nonlinear scattering theory is employed to numerically investigate the SHG enhancement phenomenon in the resonant metasurface. The periodic dolmen-type gold metasurface introduces a diffraction coupling effect between Fano resonance and surface lattice resonance (SLR), providing strong local-field enhancement and significantly enhancing the nonlinear effect. We analyze the influence of the coupling between Fano resonance and SLR on the SHG intensity and achieve a 230-fold enhancement in SHG intensity compared to the single resonance case by adjusting the periodicity of the metasurface. The SHG-enhanced gold metasurface may find applications in sensing, imaging, optical computing, and integrated nonlinear optics.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":"13 12","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140974935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Stephen T. Schaefer, Zheng Ju, Xiaoyang Liu, Xin Qi, Jacob B. Khurgin, Yong-Hang Zhang
Asymmetric quantum wells (AQWs) utilizing interband transitions enhance second-order susceptibility over a wide wavelength range compared to natural crystals. The nonlinear susceptibility is further enhanced in AQWs with type-II band alignment as compared to type-I band alignment, a result of the larger interband charge shift. This enhancement is demonstrated in this work by analyzing three type-I and type-II AQW designs based on the lattice-matched InP/AlGaInAs materials systems using the envelope wavefunction approximation. The calculated interband second-order susceptibility tensor elements in type-II structures range between 20 and 1.60 × 103 pm/V for nearly resonant optical rectification and difference frequency generation applications at near-infrared and terahertz wavelengths, an improvement of nearly 1 order of magnitude over the type-I structures and 1–2 orders of magnitude over natural crystals such as LiNbO3, KTiOPO4 (KTP), or GaAs. A factor of 2–3 further enhancement of the tensor elements is achieved by optimizing the well widths and band offsets of the type-II asymmetric quantum wells. The type-II structure can be implemented in other material systems spanning the longwave infrared to visible wavelengths, enhancing nonlinear susceptibility for various applications, including photonic integrated circuits.
与天然晶体相比，利用带间跃迁的不对称量子阱（AQWs）可在很宽的波长范围内提高二阶电感。与 I 型带排列相比，具有 II 型带排列的非对称量子阱的非线性电感进一步增强，这是由于带间电荷转移更大的结果。本研究利用包络波函数近似法分析了基于晶格匹配的 InP/AlGaInAs 材料系统的三种 I 型和 II 型 AQW 设计，证明了这种增强。计算得出的 II 型结构带间二阶感性张量元素在 20 到 1.60 × 103 pm/V 之间，适用于近红外和太赫兹波长的近谐振光整流和差频发生应用，比 I 型结构提高了近 1 个数量级，比 LiNbO3、KTiOPO4 (KTP) 或 GaAs 等天然晶体提高了 1-2 个数量级。通过优化 II 型非对称量子阱的阱宽和带偏移，张量元素可进一步提高 2-3 倍。这种 II 型结构可应用于从长波红外到可见光波长的其他材料系统中，从而增强非线性感性，以满足包括光子集成电路在内的各种应用。
{"title":"Enhanced second-order nonlinear susceptibility in type-II asymmetric quantum well structures","authors":"Stephen T. Schaefer, Zheng Ju, Xiaoyang Liu, Xin Qi, Jacob B. Khurgin, Yong-Hang Zhang","doi":"10.1063/5.0174179","DOIUrl":"https://doi.org/10.1063/5.0174179","url":null,"abstract":"Asymmetric quantum wells (AQWs) utilizing interband transitions enhance second-order susceptibility over a wide wavelength range compared to natural crystals. The nonlinear susceptibility is further enhanced in AQWs with type-II band alignment as compared to type-I band alignment, a result of the larger interband charge shift. This enhancement is demonstrated in this work by analyzing three type-I and type-II AQW designs based on the lattice-matched InP/AlGaInAs materials systems using the envelope wavefunction approximation. The calculated interband second-order susceptibility tensor elements in type-II structures range between 20 and 1.60 × 103 pm/V for nearly resonant optical rectification and difference frequency generation applications at near-infrared and terahertz wavelengths, an improvement of nearly 1 order of magnitude over the type-I structures and 1–2 orders of magnitude over natural crystals such as LiNbO3, KTiOPO4 (KTP), or GaAs. A factor of 2–3 further enhancement of the tensor elements is achieved by optimizing the well widths and band offsets of the type-II asymmetric quantum wells. The type-II structure can be implemented in other material systems spanning the longwave infrared to visible wavelengths, enhancing nonlinear susceptibility for various applications, including photonic integrated circuits.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":"43 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140974577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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