T. T. Le, Zhuangyi Zhou, Alan Chen, Zhongshu Yang, F. Rougieux, D. Macdonald, A. Liu
In this work, we present a comprehensive re-evaluation of the iron–gallium (FeGa) recombination parameters in silicon using injection-dependent lifetime spectroscopy (IDLS). Ga-doped silicon wafers (of varying resistivities) with precise concentrations of intentional iron contamination in the silicon wafer bulk, through ion implantation and distribution, were used. The presence of interstitial Fei and FeGa, and their lifetime-limiting effects in these silicon wafers, were confirmed through measuring the effective minority carrier lifetime changes during the conditions that are known to cause FeGa dissociation and association. The presence of Fe was also confirmed by deep-level transient spectroscopy. To ensure accurate IDLS analysis of the FeGa defect in silicon, a lifetime linearization scheme was employed to effectively filter out interference by other defects. Error analysis was employed to find the combination of defect parameters that best fit the experimental data and to ascertain the range of uncertainty associated with the IDLS best-fit results. The optimal fitting of the experimental IDLS by Shockley–Read–Hall statistics produced an electron capture cross section σn=2.3×10−14cm2, hole capture cross section σp=1.1×10−14cm2, and a trap energy level Et=EV+0.2−0.01+0.02eV for the FeGa defect in silicon. The extracted defect parameters are also verified by experimentally measuring the crossover point of Fei and FeGa lifetime curves.
{"title":"Reassessing iron–gallium recombination activity in silicon","authors":"T. T. Le, Zhuangyi Zhou, Alan Chen, Zhongshu Yang, F. Rougieux, D. Macdonald, A. Liu","doi":"10.1063/5.0198737","DOIUrl":"https://doi.org/10.1063/5.0198737","url":null,"abstract":"In this work, we present a comprehensive re-evaluation of the iron–gallium (FeGa) recombination parameters in silicon using injection-dependent lifetime spectroscopy (IDLS). Ga-doped silicon wafers (of varying resistivities) with precise concentrations of intentional iron contamination in the silicon wafer bulk, through ion implantation and distribution, were used. The presence of interstitial Fei and FeGa, and their lifetime-limiting effects in these silicon wafers, were confirmed through measuring the effective minority carrier lifetime changes during the conditions that are known to cause FeGa dissociation and association. The presence of Fe was also confirmed by deep-level transient spectroscopy. To ensure accurate IDLS analysis of the FeGa defect in silicon, a lifetime linearization scheme was employed to effectively filter out interference by other defects. Error analysis was employed to find the combination of defect parameters that best fit the experimental data and to ascertain the range of uncertainty associated with the IDLS best-fit results. The optimal fitting of the experimental IDLS by Shockley–Read–Hall statistics produced an electron capture cross section σn=2.3×10−14cm2, hole capture cross section σp=1.1×10−14cm2, and a trap energy level Et=EV+0.2−0.01+0.02eV for the FeGa defect in silicon. The extracted defect parameters are also verified by experimentally measuring the crossover point of Fei and FeGa lifetime curves.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":"87 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140746842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A theoretical study of the mechanism of magnon transfer through a ferromagnetic chain (F) has been carried out from magnetically ordered contact A to similar contact B (AFB system). The regime of spin excitation transport is considered, when the inner section of the chain with identical paramagnetic units acts as a bridge for magnon transfer and thereby is poorly populated by magnons. In this case, the magnon transfer can be carried out by sequential hopping the localized magnon across all units of the chain or/and tunneling the magnon between the terminal units of the chain by a “superexchange” mechanism. The latter involves in the tunneling route the virtual delocalized magnons. The analytical dependence of the corresponding transfer rates on the number of paramagnetic bridge units is found and the magnon analog of the Seebeck and Peltier effects is predicted.
我们对从磁有序触点 A 到类似触点 B（AFB 系统）的磁子通过铁磁链（F）传输的机制进行了理论研究。研究考虑了自旋激发传输机制，即具有相同顺磁单元的链内部分作为磁子传输的桥梁，因此磁子填充较少。在这种情况下，磁子传输可以通过局部磁子在链的所有单元间的顺序跳跃或/和通过 "超交换 "机制在链的终端单元间的隧道传输来实现。后者在隧穿过程中涉及虚拟脱局域磁子。研究发现了相应传输速率对顺磁桥单元数量的分析依赖性，并预测了塞贝克效应和珀尔帖效应的磁子类似物。
{"title":"Long-range magnon transfer across a bridging ferromagnetic chain via sequential and tunnel routes","authors":"Elmar Petrov","doi":"10.1063/5.0189726","DOIUrl":"https://doi.org/10.1063/5.0189726","url":null,"abstract":"A theoretical study of the mechanism of magnon transfer through a ferromagnetic chain (F) has been carried out from magnetically ordered contact A to similar contact B (AFB system). The regime of spin excitation transport is considered, when the inner section of the chain with identical paramagnetic units acts as a bridge for magnon transfer and thereby is poorly populated by magnons. In this case, the magnon transfer can be carried out by sequential hopping the localized magnon across all units of the chain or/and tunneling the magnon between the terminal units of the chain by a “superexchange” mechanism. The latter involves in the tunneling route the virtual delocalized magnons. The analytical dependence of the corresponding transfer rates on the number of paramagnetic bridge units is found and the magnon analog of the Seebeck and Peltier effects is predicted.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":"113 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140748628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chengxiang Wang, Dianjun Lu, Fuyao Tian, Weixin Yao
With the development of science and technology and the appearance of various special conditions that cause signers to be unable to sign, proxy signature is gradually becoming a hot spot in cryptography research. This paper combines proxy signature, quantum teleportation, and multi-party verification and proposes a multi-party verifiable quantum proxy signature scheme based on quantum teleportation. This scheme has the following characteristics: The authentication method based on the Hash function can effectively solve the problem of identity identification among members; in order for the proxy signer to be able to verify the correctness of the proxy authorization, a form of proxy signature authorization that concatenates the identity information of the original signer is used. The security analysis shows that our scheme is unforgeable and undeniable and can resist intercept-resend attacks and cheating attacks.
{"title":"A multi-party verifiable quantum proxy signature scheme based on quantum teleportation","authors":"Chengxiang Wang, Dianjun Lu, Fuyao Tian, Weixin Yao","doi":"10.1063/5.0201618","DOIUrl":"https://doi.org/10.1063/5.0201618","url":null,"abstract":"With the development of science and technology and the appearance of various special conditions that cause signers to be unable to sign, proxy signature is gradually becoming a hot spot in cryptography research. This paper combines proxy signature, quantum teleportation, and multi-party verification and proposes a multi-party verifiable quantum proxy signature scheme based on quantum teleportation. This scheme has the following characteristics: The authentication method based on the Hash function can effectively solve the problem of identity identification among members; in order for the proxy signer to be able to verify the correctness of the proxy authorization, a form of proxy signature authorization that concatenates the identity information of the original signer is used. The security analysis shows that our scheme is unforgeable and undeniable and can resist intercept-resend attacks and cheating attacks.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":"40 31","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140752321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A method is proposed to measure the in-plane thermal diffusivity of anisotropic solids along an arbitrary direction using laser-line lock-in thermography. In this method, the sample is heated by an intensity-modulated laser beam, which impinges on the sample surface with the shape of a narrow strip. The resulting temperature oscillations are recorded by a thermographic camera and a phase thermogram is obtained by lock-in processing the image sequence. The thermal diffusivity along the direction perpendicular to the laser line can be determined from the linear dependence of phase lag with the distance to the heating line using the slope method. Unlike laser-spot lock-in thermography, in which the slope method only provides the thermal diffusivity along the principal directions, in this configuration, the thermal diffusivity can be measured experimentally along any direction, just selecting the relative orientation of the sample with respect to the laser line. Moreover, this configuration allows averaging several parallel phase profiles leading to more reliable thermal diffusivity values. The experimental results are presented for a highly anisotropic material, namely, a unidirectional carbon fiber-reinforced polymer plate.
{"title":"Measuring the in-plane thermal diffusivity of anisotropic solids by lock-in infrared thermography: Laser-spot vs laser-line heating","authors":"A. Bedoya, A. Salazar, A. Mendioroz, E. Marín","doi":"10.1063/5.0198882","DOIUrl":"https://doi.org/10.1063/5.0198882","url":null,"abstract":"A method is proposed to measure the in-plane thermal diffusivity of anisotropic solids along an arbitrary direction using laser-line lock-in thermography. In this method, the sample is heated by an intensity-modulated laser beam, which impinges on the sample surface with the shape of a narrow strip. The resulting temperature oscillations are recorded by a thermographic camera and a phase thermogram is obtained by lock-in processing the image sequence. The thermal diffusivity along the direction perpendicular to the laser line can be determined from the linear dependence of phase lag with the distance to the heating line using the slope method. Unlike laser-spot lock-in thermography, in which the slope method only provides the thermal diffusivity along the principal directions, in this configuration, the thermal diffusivity can be measured experimentally along any direction, just selecting the relative orientation of the sample with respect to the laser line. Moreover, this configuration allows averaging several parallel phase profiles leading to more reliable thermal diffusivity values. The experimental results are presented for a highly anisotropic material, namely, a unidirectional carbon fiber-reinforced polymer plate.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":"38 10","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140752041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Fein, E. Harding, William E. Lewis, M. Weis, M. Schaeuble
The ability to visualize x-ray and neutron emission from fusion plasmas in 3D is critical to understand the origin of the complex shapes of the plasmas in experiments. Unfortunately, this remains challenging in experiments that study a fusion concept known as Magnetized Liner Inertial Fusion (MagLIF) due to a small number of available diagnostic views. Here, we present a basis function-expansion approach to reconstruct MagLIF stagnation plasmas from a sparse set of x-ray emission images. A set of natural basis functions is “learned” from training volumes containing quasi-helical structures whose projections are qualitatively similar to those observed in experimental images. Tests on several known volumes demonstrate that the learned basis outperforms both a cylindrical harmonic basis and a simple voxel basis with additional regularization, according to several metrics. Two-view reconstructions with the learned basis can estimate emission volumes to within 11% and those with three views recover morphology to a high degree of accuracy. The technique is applied to experimental data, producing the first 3D reconstruction of a MagLIF stagnation column from multiple views, providing additional indications of liner instabilities imprinting onto the emitting plasma.
三维可视化聚变等离子体的 X 射线和中子发射的能力对于了解实验中等离子体复杂形状的起源至关重要。遗憾的是，由于可用的诊断视图数量较少，这在研究磁化衬垫惯性聚变（MagLIF）这一聚变概念的实验中仍然具有挑战性。在这里，我们提出了一种基函数展开方法，用于从一组稀疏的 X 射线发射图像中重建 MagLIF 的停滞等离子体。我们从包含准螺旋结构的训练体积中 "学习 "了一组自然基函数，这些准螺旋结构的投影与实验图像中观察到的投影在性质上非常相似。在几个已知体积上进行的测试表明，根据几个指标，学习到的基函数优于圆柱谐波基函数和附加正则化的简单体素基函数。使用所学基础进行的两视角重建对发射体积的估计在 11% 以内，而三视角重建对形态的恢复也非常准确。该技术应用于实验数据，首次从多个视角对 MagLIF 停滞柱进行了三维重建，提供了衬垫不稳定性印记到发射等离子体的更多迹象。
{"title":"Three-dimensional reconstruction of x-ray emission volumes in magnetized liner inertial fusion from sparse projection data using a learned basis","authors":"J. Fein, E. Harding, William E. Lewis, M. Weis, M. Schaeuble","doi":"10.1063/5.0198839","DOIUrl":"https://doi.org/10.1063/5.0198839","url":null,"abstract":"The ability to visualize x-ray and neutron emission from fusion plasmas in 3D is critical to understand the origin of the complex shapes of the plasmas in experiments. Unfortunately, this remains challenging in experiments that study a fusion concept known as Magnetized Liner Inertial Fusion (MagLIF) due to a small number of available diagnostic views. Here, we present a basis function-expansion approach to reconstruct MagLIF stagnation plasmas from a sparse set of x-ray emission images. A set of natural basis functions is “learned” from training volumes containing quasi-helical structures whose projections are qualitatively similar to those observed in experimental images. Tests on several known volumes demonstrate that the learned basis outperforms both a cylindrical harmonic basis and a simple voxel basis with additional regularization, according to several metrics. Two-view reconstructions with the learned basis can estimate emission volumes to within 11% and those with three views recover morphology to a high degree of accuracy. The technique is applied to experimental data, producing the first 3D reconstruction of a MagLIF stagnation column from multiple views, providing additional indications of liner instabilities imprinting onto the emitting plasma.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":"35 37","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140753123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuanchao Huang, Xuanyu Jiang, Tianqi Deng, Deren Yang, X. Pi
4H Silicon carbide (4H-SiC) is widely recognized as a highly promising material for high-voltage and high-power electronic applications due to its exceptional properties. The performance of devices based on 4H-SiC is often weakened by the presence of carbon-related point defects, particularly carbon vacancies (VC). The defects of VC introduce deep-level traps (e.g., Z1/2 and EH6/7) that deteriorate device functionality. Experimental and theoretical studies on VC have led to some conflicting results about the charge states of VC, especially for the charge state ordering of EH6/7. We now employ ab initio metadynamics (META) to systematically investigate configuration space including the direction and magnitude of bond distortion and identify the most stable structures of VC. Eventually, the charge states of VC in 4H-SiC are identified. The Z1 (EH6) and Z2 (EH7) indicate transitions from acceptor (donor) levels of VC, located on the h and k sublattice sites, respectively. Z1 and Z2 demonstrate negative-U ordering, characterized by U values of −0.16 and −0.37 eV, respectively. Conversely, EH6 and EH7 display positive-U ordering, with U values of 0.16 and 0.08 eV, respectively. The current results provide insights into the properties of VC in 4H-SiC, highlighting the effectiveness of META in the exploration of complex potential energy surfaces associated with point defects in solids.
4H 碳化硅（4H-SiC）因其优异的性能，被广泛认为是一种极具潜力的高压和大功率电子应用材料。由于存在与碳相关的点缺陷，特别是碳空位（VC），基于 4H-SiC 的器件的性能往往会被削弱。VC 缺陷会引入深层陷阱（如 Z1/2 和 EH6/7），从而降低器件的功能。关于 VC 的实验和理论研究导致了一些关于 VC 电荷状态的相互矛盾的结果，尤其是 EH6/7 的电荷状态排序。现在，我们采用 ab initio 元动力学（META）来系统地研究构型空间，包括键变形的方向和幅度，并确定 VC 最稳定的结构。最终，我们确定了 4H-SiC 中 VC 的电荷状态。Z1 (EH6) 和 Z2 (EH7) 表示 VC 从受体（供体）水平的跃迁，分别位于 h 和 k 亚晶格位点上。Z1 和 Z2 显示出负 U 排序，U 值分别为 -0.16 和 -0.37 eV。相反，EH6 和 EH7 则显示出正 U 排序，U 值分别为 0.16 和 0.08 eV。目前的研究结果提供了对 4H-SiC 中 VC 特性的深入了解，凸显了 META 在探索与固体点缺陷相关的复杂势能面方面的有效性。
{"title":"Identifying the charge states of carbon vacancies in 4H-SiC by ab initio metadynamics","authors":"Yuanchao Huang, Xuanyu Jiang, Tianqi Deng, Deren Yang, X. Pi","doi":"10.1063/5.0195321","DOIUrl":"https://doi.org/10.1063/5.0195321","url":null,"abstract":"4H Silicon carbide (4H-SiC) is widely recognized as a highly promising material for high-voltage and high-power electronic applications due to its exceptional properties. The performance of devices based on 4H-SiC is often weakened by the presence of carbon-related point defects, particularly carbon vacancies (VC). The defects of VC introduce deep-level traps (e.g., Z1/2 and EH6/7) that deteriorate device functionality. Experimental and theoretical studies on VC have led to some conflicting results about the charge states of VC, especially for the charge state ordering of EH6/7. We now employ ab initio metadynamics (META) to systematically investigate configuration space including the direction and magnitude of bond distortion and identify the most stable structures of VC. Eventually, the charge states of VC in 4H-SiC are identified. The Z1 (EH6) and Z2 (EH7) indicate transitions from acceptor (donor) levels of VC, located on the h and k sublattice sites, respectively. Z1 and Z2 demonstrate negative-U ordering, characterized by U values of −0.16 and −0.37 eV, respectively. Conversely, EH6 and EH7 display positive-U ordering, with U values of 0.16 and 0.08 eV, respectively. The current results provide insights into the properties of VC in 4H-SiC, highlighting the effectiveness of META in the exploration of complex potential energy surfaces associated with point defects in solids.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":"100 17","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140754415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
While SnF2 is reported as an effective additive for improving the efficiency of lead-free tin-based perovskite solar cells, the mechanism is still unclear and requires further studies. Upon incorporating SnF2 into MASnI3, SnF2 reduces the intrinsic carrier density from 1018 to 1012 cm–3 and produces a longer carrier diffusion length as confirmed by the Hall measurements. The femtosecond transient absorption spectroscopy shows that SnF2 doping enhances the hot-phonon bottleneck effect of MASnI3. The slow cooling process of hot carriers may help to reduce non-radiative recombination, increase the fluorescence lifetime, and, therefore, improve the utilization rate of carriers. Finally, lead-free low bandgap perovskite MASnI3 is utilized as a light absorbing layer in solar cells, achieving high optical current and high voltage in tin-based perovskite solar cells. The final power conversion efficiency is 10.2%, while the power conversion efficiency for the control unit is 6.69%.
{"title":"A hot phonon bottleneck observed upon incorporation of SnF2 to MASnI3 films and its possible role in increasing photocarrier diffusion length","authors":"F. Xu, Haoming Wei, Bingqiang Cao","doi":"10.1063/5.0194851","DOIUrl":"https://doi.org/10.1063/5.0194851","url":null,"abstract":"While SnF2 is reported as an effective additive for improving the efficiency of lead-free tin-based perovskite solar cells, the mechanism is still unclear and requires further studies. Upon incorporating SnF2 into MASnI3, SnF2 reduces the intrinsic carrier density from 1018 to 1012 cm–3 and produces a longer carrier diffusion length as confirmed by the Hall measurements. The femtosecond transient absorption spectroscopy shows that SnF2 doping enhances the hot-phonon bottleneck effect of MASnI3. The slow cooling process of hot carriers may help to reduce non-radiative recombination, increase the fluorescence lifetime, and, therefore, improve the utilization rate of carriers. Finally, lead-free low bandgap perovskite MASnI3 is utilized as a light absorbing layer in solar cells, achieving high optical current and high voltage in tin-based perovskite solar cells. The final power conversion efficiency is 10.2%, while the power conversion efficiency for the control unit is 6.69%.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":"18 14","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140775074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The degree of microstructural non-uniformity and the lifetime extension of multilayer ceramic capacitors (MLCCs) were evaluated by repeating the fabrication of “prebreakdown” MLCCs through highly accelerated life tests (HALTs), the removal of the insulation resistance-degraded layer, and the reformation of the terminal electrode. The total mean time to failure (MTTF) tended to extend and converge as HALTs were repeated. Microstructural analysis in the degraded local area revealed a clear correlation between the shorter lifetime and the minimum number of grains per unit dielectric layer. After HALTs were repeated, the number of grains came close to and converged as much as undegraded areas over a longer lifetime. These results imply that degradation occurs in order from the greatest degree of microstructural non-uniformity and that the weakest-link model can be understood by treating the lifetime as MTTF.
通过高度加速寿命试验（HALT）、去除绝缘电阻劣化层和终端电极改造，重复制造 "失效前 "的多层陶瓷电容器（MLCC），评估了多层陶瓷电容器（MLCC）的微观结构不均匀程度和寿命延长情况。随着 HALT 的重复进行，总平均失效时间（MTTF）趋于延长和收敛。降解局部区域的微观结构分析表明，较短的寿命与单位介电层的最小晶粒数之间存在明显的相关性。在重复进行 HALT 之后，晶粒数量在较长的寿命期间接近并趋近于未降解区域的数量。这些结果表明，降解是按微观结构不均匀程度从大到小的顺序发生的，而且可以通过将寿命视为 MTTF 来理解弱链接模型。
{"title":"A study on the reduction of microstructural non-uniformity in Ni-multilayer ceramic capacitors via repeated highly accelerated life tests and analyses of degraded local areas","authors":"M. Nagayoshi, Ryosuke Sakata","doi":"10.1063/5.0182651","DOIUrl":"https://doi.org/10.1063/5.0182651","url":null,"abstract":"The degree of microstructural non-uniformity and the lifetime extension of multilayer ceramic capacitors (MLCCs) were evaluated by repeating the fabrication of “prebreakdown” MLCCs through highly accelerated life tests (HALTs), the removal of the insulation resistance-degraded layer, and the reformation of the terminal electrode. The total mean time to failure (MTTF) tended to extend and converge as HALTs were repeated. Microstructural analysis in the degraded local area revealed a clear correlation between the shorter lifetime and the minimum number of grains per unit dielectric layer. After HALTs were repeated, the number of grains came close to and converged as much as undegraded areas over a longer lifetime. These results imply that degradation occurs in order from the greatest degree of microstructural non-uniformity and that the weakest-link model can be understood by treating the lifetime as MTTF.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":"40 22","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140771493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The time-modulated active medium with linear independent frequency conversion method has been demonstrated to enable wave orientation and reconstruction. However, due to the symmetric scattering field, this technique requires intricate microcircuit designs. To overcome this limitation, this paper proposes a tunable piezoelectric metasurface based on acoustic black holes (ABHs) to redirect flexural wave reflections. The system can convert an incident flexural wave into a reflected wave of any direction and frequency. This is accomplished through the linear time modulation of the sensing signal, which breaks the constraints of Snell’s law inherent in traditional designs and is insensitive to the incident amplitude. The coupling of the ABH damping system with a linear independent frequency conversion mechanism allows for the conversion of an incident flexural wave into a reflected wave in any direction and frequency while also eliminating the influence of second harmonic reflection on the wave field and simplifying the time modulation circuit. In addition, this paper demonstrates arbitrary angle reflection, focusing, beam splitting, and frequency conversion of the incident wave. By improving the flexibility of elastic wave manipulation, this paper introduces a new approach for active control of elastic waves and provides a design method that can be employed in a variety of applications ranging from vibration protection of engineering structures to vibration sensing and evaluation.
{"title":"A programmable metasurface based on acoustic black hole for real-time control of flexural waves","authors":"Kun Su, Lixia Li","doi":"10.1063/5.0187726","DOIUrl":"https://doi.org/10.1063/5.0187726","url":null,"abstract":"The time-modulated active medium with linear independent frequency conversion method has been demonstrated to enable wave orientation and reconstruction. However, due to the symmetric scattering field, this technique requires intricate microcircuit designs. To overcome this limitation, this paper proposes a tunable piezoelectric metasurface based on acoustic black holes (ABHs) to redirect flexural wave reflections. The system can convert an incident flexural wave into a reflected wave of any direction and frequency. This is accomplished through the linear time modulation of the sensing signal, which breaks the constraints of Snell’s law inherent in traditional designs and is insensitive to the incident amplitude. The coupling of the ABH damping system with a linear independent frequency conversion mechanism allows for the conversion of an incident flexural wave into a reflected wave in any direction and frequency while also eliminating the influence of second harmonic reflection on the wave field and simplifying the time modulation circuit. In addition, this paper demonstrates arbitrary angle reflection, focusing, beam splitting, and frequency conversion of the incident wave. By improving the flexibility of elastic wave manipulation, this paper introduces a new approach for active control of elastic waves and provides a design method that can be employed in a variety of applications ranging from vibration protection of engineering structures to vibration sensing and evaluation.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":"1218 11","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140774174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Higher-order topological states, as emergent topological phases of matter, originating from condensed matter physics, have sparked a vibrant exploration of topological insulators. Their topologically protected multidimensional localized states are typically associated with nontrivial bulk band topology, and the significant impact of lattice geometry is unconsciously overlooked. Here, we construct coupled acoustic cavities on a two-dimensional honeycomb lattice to investigate the sensitivity of higher-order topological modes to the variations of edge contour. Fractional charge is utilized to accurately predict topological modes with distinct topological orders, in spite of the minimal bulk bandgaps inherent in the honeycomb lattice and bound states in the continuum. It is found that the presence and absence of the first-order and higher-order topological modes in the same topological phase are tightly linked to the sample boundaries, which can be demonstrated by both theoretical analysis and numerical calculation. Our study also discusses potential physical realization of geometry-dependent topological states across different platforms, providing inspiration for the prospective application of topological devices in acoustics.
{"title":"Geometry-dependent acoustic higher-order topological phases on a two-dimensional honeycomb lattice","authors":"Shi-Qiao Wu, Zhi-Kang Lin, Yongyao Li, Jianing Xie","doi":"10.1063/5.0202383","DOIUrl":"https://doi.org/10.1063/5.0202383","url":null,"abstract":"Higher-order topological states, as emergent topological phases of matter, originating from condensed matter physics, have sparked a vibrant exploration of topological insulators. Their topologically protected multidimensional localized states are typically associated with nontrivial bulk band topology, and the significant impact of lattice geometry is unconsciously overlooked. Here, we construct coupled acoustic cavities on a two-dimensional honeycomb lattice to investigate the sensitivity of higher-order topological modes to the variations of edge contour. Fractional charge is utilized to accurately predict topological modes with distinct topological orders, in spite of the minimal bulk bandgaps inherent in the honeycomb lattice and bound states in the continuum. It is found that the presence and absence of the first-order and higher-order topological modes in the same topological phase are tightly linked to the sample boundaries, which can be demonstrated by both theoretical analysis and numerical calculation. Our study also discusses potential physical realization of geometry-dependent topological states across different platforms, providing inspiration for the prospective application of topological devices in acoustics.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":"90 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140755982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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