Pub Date : 2023-01-01DOI: 10.1587/transele.2022fup0003
Joong‐Won Shin, Masakazu Tanuma, S. Ohmi
{"title":"Kr-Plasma Sputtering for Pt Gate Electrode Deposition on MFSFET with 5 nm-Thick Ferroelectric Nondoped HfO2 Gate Insulator for Analog Memory Application","authors":"Joong‐Won Shin, Masakazu Tanuma, S. Ohmi","doi":"10.1587/transele.2022fup0003","DOIUrl":"https://doi.org/10.1587/transele.2022fup0003","url":null,"abstract":"","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":"30 1","pages":"581-587"},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.1587/transele.2022ecp5057
Pengfei Gao, Xiaoying Tian, Yannan Shi
{"title":"A Method for Researching the Influence of Relay Coil Location on the Transmission Efficiency of Wireless Power Transfer System","authors":"Pengfei Gao, Xiaoying Tian, Yannan Shi","doi":"10.1587/transele.2022ecp5057","DOIUrl":"https://doi.org/10.1587/transele.2022ecp5057","url":null,"abstract":"","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":"106 1","pages":"597-604"},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.1587/transele.2022ecp5065
A. Hirata, Tubasa Saijo, Yuma Kawamoto, T. Nagatsuma, I. Watanabe, N. Sekine, A. Kasamatsu
{"title":"Evaluation of Transmission Characteristics of 120-GHz-Band Close-Proximity Wireless Links Using Split-Ring-Resonator Absorber Integrated Planar Slot Antenna","authors":"A. Hirata, Tubasa Saijo, Yuma Kawamoto, T. Nagatsuma, I. Watanabe, N. Sekine, A. Kasamatsu","doi":"10.1587/transele.2022ecp5065","DOIUrl":"https://doi.org/10.1587/transele.2022ecp5065","url":null,"abstract":"","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":"10 1","pages":"458-465"},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.1587/transele.2022oci0001
Y. Atsumi, Tomoya Yoshida, R. Matsumoto, R. Konoike, Y. Sakakibara, Takashi Inoue, Keijiro Suzuki
SUMMARY Indoor free space optical (FSO) communication technology that provides high-speed connectivity to edge users is expected to be introduced in the near future mobile communication system, where the silicon photonics solid-state beam scanning device is a promising tool because of its low cost, long-term reliability, and other beneficial properties. However, the current two-dimensional beam scanning devices using grating coupler arrays have di ffi culty in increasing the transmission capacity because of bandwidth regulation. To solve the problem, we have introduced a broadband surface optical coupler, “elephant coupler,” which has great potential for combining wavelength and spatial division multiplexing technologies into the beam scanning device, as an alternative to grating couplers. The prototype port-selective silicon beam scanning device fabricated using a 300 mm CMOS pilot line achieved broadband optical beam emission with a 1 dB-loss bandwidth of 40 nm and demonstrated beam scanning using an imaging lens. The device has also exhibited free-space signal transmission of non-return-to-zero on-o ff -keying signals at 10 Gbps over a wide wavelength range of 60 nm. In this paper, we present an overview of the developed beam scanning device. Furthermore, the theoretical design guidelines for indoor mobile FSO communication are discussed.
为边缘用户提供高速连接的室内自由空间光学(FSO)通信技术有望在不久的将来被引入移动通信系统，其中硅光子固态光束扫描设备因其低成本、长期可靠性和其他有益特性而成为一种有前途的工具。然而，目前使用光栅耦合器阵列的二维光束扫描设备由于带宽的限制，在提高传输容量方面存在困难。为了解决这个问题，我们引入了一种宽带表面光耦合器，“大象耦合器”，它具有将波长和空分复用技术结合到波束扫描设备中的巨大潜力，作为光栅耦合器的替代品。采用300 mm CMOS导频线制作的端口选择性硅光束扫描装置原型实现了1 db损耗带宽为40 nm的宽带光束发射，并演示了使用成像透镜进行光束扫描。该器件还展示了在60 nm宽波长范围内以10 Gbps的速度传输不归零开关信号的自由空间信号。本文对研制的波束扫描装置进行了综述。在此基础上，讨论了室内移动FSO通信的理论设计准则。
{"title":"Broadband port-selective silicon beam scanning device for free-space optical communication","authors":"Y. Atsumi, Tomoya Yoshida, R. Matsumoto, R. Konoike, Y. Sakakibara, Takashi Inoue, Keijiro Suzuki","doi":"10.1587/transele.2022oci0001","DOIUrl":"https://doi.org/10.1587/transele.2022oci0001","url":null,"abstract":"SUMMARY Indoor free space optical (FSO) communication technology that provides high-speed connectivity to edge users is expected to be introduced in the near future mobile communication system, where the silicon photonics solid-state beam scanning device is a promising tool because of its low cost, long-term reliability, and other beneficial properties. However, the current two-dimensional beam scanning devices using grating coupler arrays have di ffi culty in increasing the transmission capacity because of bandwidth regulation. To solve the problem, we have introduced a broadband surface optical coupler, “elephant coupler,” which has great potential for combining wavelength and spatial division multiplexing technologies into the beam scanning device, as an alternative to grating couplers. The prototype port-selective silicon beam scanning device fabricated using a 300 mm CMOS pilot line achieved broadband optical beam emission with a 1 dB-loss bandwidth of 40 nm and demonstrated beam scanning using an imaging lens. The device has also exhibited free-space signal transmission of non-return-to-zero on-o ff -keying signals at 10 Gbps over a wide wavelength range of 60 nm. In this paper, we present an overview of the developed beam scanning device. Furthermore, the theoretical design guidelines for indoor mobile FSO communication are discussed.","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":"1 1","pages":"739-747"},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.1587/transele.2022oci0002
W. Kobayashi, S. Kanazawa, T. Shindo, M. Mitsuhara, F. Nakajima
SUMMARY We evaluated the energy efficiency per 1-bit transmission of an optical light source on InP substrate to achieve optical interconnection. A semiconductor optical amplifier (SOA) assisted extended reach EADFB laser (AXEL) was utilized as the optical light source to enhance the energy efficiency compared to the conventional electro-absorption modulator integrated with a DFB laser (EML). The AXEL has frequency bandwidth extendibility for operation of over 100 Gbit/s, which is difficult when using a vertical cavity surface emitting laser (VCSEL) without an equalizer. By designing the AXEL for low power consumption, we were able to achieve 64-Gbit/s, 1.0 pJ/bit and 128-Gbit/s, 1.5 pJ/bit operation at 50 °C with the transmitter dispersion and eye closure quaternary of 1.1 dB.
{"title":"128 Gbit/s operation of AXEL with energy efficiency of 1.5 pJ/bit for optical interconnection","authors":"W. Kobayashi, S. Kanazawa, T. Shindo, M. Mitsuhara, F. Nakajima","doi":"10.1587/transele.2022oci0002","DOIUrl":"https://doi.org/10.1587/transele.2022oci0002","url":null,"abstract":"SUMMARY We evaluated the energy efficiency per 1-bit transmission of an optical light source on InP substrate to achieve optical interconnection. A semiconductor optical amplifier (SOA) assisted extended reach EADFB laser (AXEL) was utilized as the optical light source to enhance the energy efficiency compared to the conventional electro-absorption modulator integrated with a DFB laser (EML). The AXEL has frequency bandwidth extendibility for operation of over 100 Gbit/s, which is difficult when using a vertical cavity surface emitting laser (VCSEL) without an equalizer. By designing the AXEL for low power consumption, we were able to achieve 64-Gbit/s, 1.0 pJ/bit and 128-Gbit/s, 1.5 pJ/bit operation at 50 °C with the transmitter dispersion and eye closure quaternary of 1.1 dB.","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":"646 1","pages":"732-738"},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.1587/transele.2023mms0006
Yuma Kawamoto, Toki Yoshioka, Norihiko Shibata, D. Headland, Masayuki Fujita, Ryo Koma, Ryo Igarashi, K. Hara, J. Kani, T. Nagatsuma
SUMMARY We propose a novel silicon diplexer integrated with filters for frequency-division multiplexing in the 300-GHz band. The diplexer consists of a directional coupler formed of unclad silicon wires, a photonic bandgap-based low-pass filter, and a high-pass filter based on frequency-dependent bending loss. These integrated filters are capable of suppressing crosstalk and providing >15 dB isolation over 40 GHz, which is highly beneficial for terahertz-range wireless communications applications. We have used this diplexer in a simultaneous error-free wireless transmission of 300-GHz and 335-GHz channels at the aggregate data rate of 36 Gbit/s.
{"title":"300-GHz-band diplexer for frequency-division multiplexed wireless communication","authors":"Yuma Kawamoto, Toki Yoshioka, Norihiko Shibata, D. Headland, Masayuki Fujita, Ryo Koma, Ryo Igarashi, K. Hara, J. Kani, T. Nagatsuma","doi":"10.1587/transele.2023mms0006","DOIUrl":"https://doi.org/10.1587/transele.2023mms0006","url":null,"abstract":"SUMMARY We propose a novel silicon diplexer integrated with filters for frequency-division multiplexing in the 300-GHz band. The diplexer consists of a directional coupler formed of unclad silicon wires, a photonic bandgap-based low-pass filter, and a high-pass filter based on frequency-dependent bending loss. These integrated filters are capable of suppressing crosstalk and providing >15 dB isolation over 40 GHz, which is highly beneficial for terahertz-range wireless communications applications. We have used this diplexer in a simultaneous error-free wireless transmission of 300-GHz and 335-GHz channels at the aggregate data rate of 36 Gbit/s.","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":"1 1","pages":"722-726"},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.1587/transele.2022fus0001
Kaito Tomari, J. Yoneda, T. Kodera
SUMMARY Reducing on-chip microwave crosstalk is crucial for semiconductor spin qubit integration. Toward crosstalk reduction and qubit integration, we investigate on-chip microwave crosstalk for gate electrode pad designs with (i) etched trenches between contact pads or (ii) contact pads with reduced sizes. We conclude that the design with feature (ii) is advantageous for high-density integration of semiconductor qubits with small crosstalk (below -25 dB at 6 GHz), favoring the introduction of flip- chip bonding.
{"title":"Contact Pad Design Considerations for Semiconductor Qubit Devices for Reducing On-Chip Microwave Crosstalk","authors":"Kaito Tomari, J. Yoneda, T. Kodera","doi":"10.1587/transele.2022fus0001","DOIUrl":"https://doi.org/10.1587/transele.2022fus0001","url":null,"abstract":"SUMMARY Reducing on-chip microwave crosstalk is crucial for semiconductor spin qubit integration. Toward crosstalk reduction and qubit integration, we investigate on-chip microwave crosstalk for gate electrode pad designs with (i) etched trenches between contact pads or (ii) contact pads with reduced sizes. We conclude that the design with feature (ii) is advantageous for high-density integration of semiconductor qubits with small crosstalk (below -25 dB at 6 GHz), favoring the introduction of flip- chip bonding.","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":"106 1","pages":"588-591"},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.1587/transele.2022ecp5053
T. Enomoto, Nobuaki Kobayashi
SUMMARY We developed a self-controllable voltage level (SVL) circuit and applied this circuit to a single-power-supply, six-transistor complementary metal-oxide-semiconductor static random-access memory (SRAM) to not only improve both write and read performances but also to achieve low standby power and data retention (holding) capability. The SVL circuit comprises only three MOSFETs (i.e., pull-up, pull-down and bypass MOSFETs). The SVL circuit is able to adaptively generate both optimal memory cell voltages and word line voltages depending on which mode of operation (i.e., write, read or hold operation) was used. The write margin ( V WM ) and read margin ( V RM ) of the developed (dvlp) SRAM at a supply voltage ( V DD ) of 1 V were 0.470 and 0.1923 V, respectively. These values were 1.309 and 2.093 times V WM and V RM of the conventional (conv) SRAM, respectively. At a large threshold voltage ( V t ) variability (= +6 σ ), the minimum power supply voltage ( V Min ) for the write operation of the conv SRAM was 0.37 V, whereas it decreased to 0.22 V for the dvlp SRAM. V Min for the read operation of the conv SRAM was 1.05 V when the V t variability (= -6 σ ) was large, but the dvlp SRAM lowered it to 0.41 V. These results show that the SVL circuit expands the operating voltage range for both write and read operations to lower voltages. The dvlp SRAM reduces the standby power consumption ( P ST ) while retaining data. The measured P ST of the 2k-bit, 90-nm dvlp SRAM was only 0.957 μ W at V DD = 1.0 V, which was 9.46% of P ST of the conv SRAM (10.12 μ W). The Si area overhead of the SVL circuits was only 1.383% of the dvlp SRAM.
{"title":"Single-Power-Supply Six-Transistor CMOS SRAM Enabling Low-Voltage Writing, Low-Voltage Reading, and Low Standby Power Consumption","authors":"T. Enomoto, Nobuaki Kobayashi","doi":"10.1587/transele.2022ecp5053","DOIUrl":"https://doi.org/10.1587/transele.2022ecp5053","url":null,"abstract":"SUMMARY We developed a self-controllable voltage level (SVL) circuit and applied this circuit to a single-power-supply, six-transistor complementary metal-oxide-semiconductor static random-access memory (SRAM) to not only improve both write and read performances but also to achieve low standby power and data retention (holding) capability. The SVL circuit comprises only three MOSFETs (i.e., pull-up, pull-down and bypass MOSFETs). The SVL circuit is able to adaptively generate both optimal memory cell voltages and word line voltages depending on which mode of operation (i.e., write, read or hold operation) was used. The write margin ( V WM ) and read margin ( V RM ) of the developed (dvlp) SRAM at a supply voltage ( V DD ) of 1 V were 0.470 and 0.1923 V, respectively. These values were 1.309 and 2.093 times V WM and V RM of the conventional (conv) SRAM, respectively. At a large threshold voltage ( V t ) variability (= +6 σ ), the minimum power supply voltage ( V Min ) for the write operation of the conv SRAM was 0.37 V, whereas it decreased to 0.22 V for the dvlp SRAM. V Min for the read operation of the conv SRAM was 1.05 V when the V t variability (= -6 σ ) was large, but the dvlp SRAM lowered it to 0.41 V. These results show that the SVL circuit expands the operating voltage range for both write and read operations to lower voltages. The dvlp SRAM reduces the standby power consumption ( P ST ) while retaining data. The measured P ST of the 2k-bit, 90-nm dvlp SRAM was only 0.957 μ W at V DD = 1.0 V, which was 9.46% of P ST of the conv SRAM (10.12 μ W). The Si area overhead of the SVL circuits was only 1.383% of the dvlp SRAM.","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":"106 1","pages":"466-476"},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.1587/transele.2022ecp5054
Xiaofang Li, B. Deng, Qiang Fu, Hongqiang Wang
SUMMARY The ideal point scattering model requires that each scattering center is isotropic, the position of the scattering center corresponding to the target remains unchanged, and the backscattering amplitude and phase of the target do not change with the incident frequency and incident azimuth. In fact, these conditions of the ideal point scattering model are difficult to meet, and the scattering models are not ideal in most cases. In order to understand the difference between non-ideal scattering center and ideal scattering center, this paper takes a metal plate as the research object, carries out two-dimensional imaging of the metal plate, compares the difference between the imaging position and the theoretical target position, and compares the shape of the scattering center obtained from two-dimensional imaging of the plate from different angles. From the experimental results, the offset between the scattering center position and the theoretical target position corresponding to the two-dimensional imaging of the plate under the non-ideal point scattering model is less than the range resolution and azimuth resolution. The deviation between the small angle two-dimensional imaging position and the theoretical target position using the ideal point scattering model is small, and the ideal point scattering model is still suitable for the two-dimensional imaging of the plate. In the imaging process, the ratio of range resolution and azimuth resolution affects the shape of the scattering center. The range resolution is equal to the azimuth resolution, the shape of the scattering center is circular; the range resolution is not equal to the azimuth resolution, and the shape of the scattering center is elliptic. In order to obtain more accurate two-dimensional image, the appropriate range resolution and azimuth resolution can be considered when using the ideal point scattering model for two-dimensional imaging. The two-dimensional imaging results of the plate at different azimuth and angle can be used as a reference for the study of non-ideal point scattering model.
{"title":"Fine feature analysis of metal plate based on two-dimensional imaging under non-ideal scattering","authors":"Xiaofang Li, B. Deng, Qiang Fu, Hongqiang Wang","doi":"10.1587/transele.2022ecp5054","DOIUrl":"https://doi.org/10.1587/transele.2022ecp5054","url":null,"abstract":"SUMMARY The ideal point scattering model requires that each scattering center is isotropic, the position of the scattering center corresponding to the target remains unchanged, and the backscattering amplitude and phase of the target do not change with the incident frequency and incident azimuth. In fact, these conditions of the ideal point scattering model are difficult to meet, and the scattering models are not ideal in most cases. In order to understand the difference between non-ideal scattering center and ideal scattering center, this paper takes a metal plate as the research object, carries out two-dimensional imaging of the metal plate, compares the difference between the imaging position and the theoretical target position, and compares the shape of the scattering center obtained from two-dimensional imaging of the plate from different angles. From the experimental results, the offset between the scattering center position and the theoretical target position corresponding to the two-dimensional imaging of the plate under the non-ideal point scattering model is less than the range resolution and azimuth resolution. The deviation between the small angle two-dimensional imaging position and the theoretical target position using the ideal point scattering model is small, and the ideal point scattering model is still suitable for the two-dimensional imaging of the plate. In the imaging process, the ratio of range resolution and azimuth resolution affects the shape of the scattering center. The range resolution is equal to the azimuth resolution, the shape of the scattering center is circular; the range resolution is not equal to the azimuth resolution, and the shape of the scattering center is elliptic. In order to obtain more accurate two-dimensional image, the appropriate range resolution and azimuth resolution can be considered when using the ideal point scattering model for two-dimensional imaging. The two-dimensional imaging results of the plate at different azimuth and angle can be used as a reference for the study of non-ideal point scattering model.","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":"1 1","pages":"789-798"},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.1587/transele.2022ecp5046
Masaru Sato, Y. Kumazaki, N. Okamoto, T. Ohki, N. Kurahashi, M. Nishimori, A. Yamada, J. Kotani, N. Hara, Keiji Watanabe
{"title":"Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier","authors":"Masaru Sato, Y. Kumazaki, N. Okamoto, T. Ohki, N. Kurahashi, M. Nishimori, A. Yamada, J. Kotani, N. Hara, Keiji Watanabe","doi":"10.1587/transele.2022ecp5046","DOIUrl":"https://doi.org/10.1587/transele.2022ecp5046","url":null,"abstract":"","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":"106 1","pages":"605-613"},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67305948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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