Pub Date : 2014-01-01DOI: 10.2478/nanofab-2014-0001
G. Rius, F. Pérez-Murano, M. Yoshimura
Abstract Recently, relevant advances on graphene as a building block of integrated circuits (ICs) have been demonstrated. Graphene growth and device fabrication related processing has been steadily and intensively powered due to commercial interest; however, there are many challenges associated with the incorporation of graphene into commercial applications which includes challenges associated with the synthesis of this material. Specifically, the controlled deposition of single layer large single crystal graphene on arbitrary supports, is particularly challenging. Previously, we have reported the first demonstration of the transformation of focused ion beam induced deposition of carbon (FIBID-C) into patterned graphitic layers by metal-assisted thermal treatment (Ni foils). In this present work, we continue exploiting the FIBID-C approach as a route for graphene deposition. Here, thin patterned Fe layers are used for the catalysis of graphenization and graphitization. We demonstrate the formation of high quality single and few layer graphene, which evidences, the possibility of using Fe as a catalyst for graphene deposition. The mechanism is understood as the minute precipitation of atomic carbon after supersaturation of some iron carbides formed under a high temperature treatment. As a consequence of the complete wetting of FIBID-C and patterned Fe layers, which enable graphene growth, the as-deposited patterns do not preserve their original shape after the thermal treatment
{"title":"Graphene crystal growth by thermal precipitation of focused ion beam induced deposition of carbon precursor via patterned-iron thin layers","authors":"G. Rius, F. Pérez-Murano, M. Yoshimura","doi":"10.2478/nanofab-2014-0001","DOIUrl":"https://doi.org/10.2478/nanofab-2014-0001","url":null,"abstract":"Abstract Recently, relevant advances on graphene as a building block of integrated circuits (ICs) have been demonstrated. Graphene growth and device fabrication related processing has been steadily and intensively powered due to commercial interest; however, there are many challenges associated with the incorporation of graphene into commercial applications which includes challenges associated with the synthesis of this material. Specifically, the controlled deposition of single layer large single crystal graphene on arbitrary supports, is particularly challenging. Previously, we have reported the first demonstration of the transformation of focused ion beam induced deposition of carbon (FIBID-C) into patterned graphitic layers by metal-assisted thermal treatment (Ni foils). In this present work, we continue exploiting the FIBID-C approach as a route for graphene deposition. Here, thin patterned Fe layers are used for the catalysis of graphenization and graphitization. We demonstrate the formation of high quality single and few layer graphene, which evidences, the possibility of using Fe as a catalyst for graphene deposition. The mechanism is understood as the minute precipitation of atomic carbon after supersaturation of some iron carbides formed under a high temperature treatment. As a consequence of the complete wetting of FIBID-C and patterned Fe layers, which enable graphene growth, the as-deposited patterns do not preserve their original shape after the thermal treatment","PeriodicalId":51992,"journal":{"name":"Nanofabrication","volume":"1 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.2478/nanofab-2014-0001","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"69237527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-01-01DOI: 10.2478/nanofab-2014-0004
J. Giérak
Abstract In this article we review some fundamentals of the Focused Ion Beam (FIB) technique based on scanning finely focused beams of gallium ions over a sample to perform direct writing. We analyse the main limitations of this technique in terms of damage generation or local contamination and through selected examples we discuss the potential of this technique in the light of the most sensitive analysis techniques. In particular we analyse the limits of Ga-FIB irradiation for the patterning of III-V heterostructures, thin magnetic layers, artificial defects fabricated onto graphite or graphene and atomically thin suspended membranes. We show that many of these earlypointed “limitations” with appropriate attention and analysis can be valuable for FIB instrument development, avoided, or even turned into decisive advantages. Such new methods transferable to the fabrication of devices or surface functionalities are urgently required in the emerging nanosciences applications and markets.
{"title":"Focused Ion Beam nano-patterning from traditional applications to single ion implantation perspectives","authors":"J. Giérak","doi":"10.2478/nanofab-2014-0004","DOIUrl":"https://doi.org/10.2478/nanofab-2014-0004","url":null,"abstract":"Abstract In this article we review some fundamentals of the Focused Ion Beam (FIB) technique based on scanning finely focused beams of gallium ions over a sample to perform direct writing. We analyse the main limitations of this technique in terms of damage generation or local contamination and through selected examples we discuss the potential of this technique in the light of the most sensitive analysis techniques. In particular we analyse the limits of Ga-FIB irradiation for the patterning of III-V heterostructures, thin magnetic layers, artificial defects fabricated onto graphite or graphene and atomically thin suspended membranes. We show that many of these earlypointed “limitations” with appropriate attention and analysis can be valuable for FIB instrument development, avoided, or even turned into decisive advantages. Such new methods transferable to the fabrication of devices or surface functionalities are urgently required in the emerging nanosciences applications and markets.","PeriodicalId":51992,"journal":{"name":"Nanofabrication","volume":"1 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.2478/nanofab-2014-0004","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"69237554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-01-01DOI: 10.2478/nanofab-2014-0002
S. Wachter, M. Gavagnin, H. Wanzenboeck, Mostafa M. Shawrav, D. Belić, E. Bertagnolli
Abstract This work reports on focused electron beam induced deposition (FEBID) using a custom built gas injection system (GIS) equipped with nitrogen as a gas carrier. We have deposited cobalt from Co2(CO)8, which is usually achieved by a heated GIS. In contrast to a heated GIS, our strategy allows avoiding problems caused by eventual temperature gradients along the GIS. Moreover, the use of the gas carrier enables a high control over process conditions and consequently the properties of the synthesized nanostructures. Chemical composition and growth rate are investigated by energy dispersive X-ray spectroscopy (EDX) and atomic force microscopy (AFM), respectively. We demonstrate that the N2 flux is strongly affecting the deposit growth rate without the need of heating the precursor in order to increase its vapour pressure. Particularly, AFM volume estimation of the deposited structures showed that increasing the nitrogen resulted in an enhanced deposition rate. The wide range of achievable precursor fluxes allowed to clearly distinguish between precursor- and electron-limited regime. With the carrier-based GIS an optimized deposition procedure with regards to the desired deposition regime has been enabled
{"title":"Nitrogen as a carrier gas for regime control in focused electron beam induced deposition","authors":"S. Wachter, M. Gavagnin, H. Wanzenboeck, Mostafa M. Shawrav, D. Belić, E. Bertagnolli","doi":"10.2478/nanofab-2014-0002","DOIUrl":"https://doi.org/10.2478/nanofab-2014-0002","url":null,"abstract":"Abstract This work reports on focused electron beam induced deposition (FEBID) using a custom built gas injection system (GIS) equipped with nitrogen as a gas carrier. We have deposited cobalt from Co2(CO)8, which is usually achieved by a heated GIS. In contrast to a heated GIS, our strategy allows avoiding problems caused by eventual temperature gradients along the GIS. Moreover, the use of the gas carrier enables a high control over process conditions and consequently the properties of the synthesized nanostructures. Chemical composition and growth rate are investigated by energy dispersive X-ray spectroscopy (EDX) and atomic force microscopy (AFM), respectively. We demonstrate that the N2 flux is strongly affecting the deposit growth rate without the need of heating the precursor in order to increase its vapour pressure. Particularly, AFM volume estimation of the deposited structures showed that increasing the nitrogen resulted in an enhanced deposition rate. The wide range of achievable precursor fluxes allowed to clearly distinguish between precursor- and electron-limited regime. With the carrier-based GIS an optimized deposition procedure with regards to the desired deposition regime has been enabled","PeriodicalId":51992,"journal":{"name":"Nanofabrication","volume":"1 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.2478/nanofab-2014-0002","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"69237540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-10DOI: 10.2478/NANOFAB-2013-0001
E. Ruiz-Gomes, C. Herrier, A. Gouyé, A. Benkouider, P. Sudraud, A. Delobbe, A. Ronda, I. Berbezier
Abstract Nanopatterns of gold clusters on a large surface of oriented Si(111) substrates, from the galvanic displacement of gold salt (via the spontaneous reduction of AuCl4-), are demonstrated in this work. The Si substrate is patterned by Focused Ion Beam (FIB) prior to being dipped in a gold solution. Here, we show that these patterns lead to successful control of the position and size of gold clusters. Sequential patterning reveals a powerful maskless alternative to surface preparation prior to Si nanowire growth.
{"title":"Electroless selective deposition of gold nano-array for silicon nanowires growth","authors":"E. Ruiz-Gomes, C. Herrier, A. Gouyé, A. Benkouider, P. Sudraud, A. Delobbe, A. Ronda, I. Berbezier","doi":"10.2478/NANOFAB-2013-0001","DOIUrl":"https://doi.org/10.2478/NANOFAB-2013-0001","url":null,"abstract":"Abstract Nanopatterns of gold clusters on a large surface of oriented Si(111) substrates, from the galvanic displacement of gold salt (via the spontaneous reduction of AuCl4-), are demonstrated in this work. The Si substrate is patterned by Focused Ion Beam (FIB) prior to being dipped in a gold solution. Here, we show that these patterns lead to successful control of the position and size of gold clusters. Sequential patterning reveals a powerful maskless alternative to surface preparation prior to Si nanowire growth.","PeriodicalId":51992,"journal":{"name":"Nanofabrication","volume":"67 1","pages":"1 - 7"},"PeriodicalIF":2.9,"publicationDate":"2013-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.2478/NANOFAB-2013-0001","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"69237513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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