Optical Materials: X最新文献_第2页

Special issue on selected papers from the international symposium on optical materials conference, ISOM9: Current research in optical materials 国际光学材料研讨会论文精选特刊，ISOM9：光学材料的研究现状

Q2 Engineering

Optical Materials: X

Pub Date : 2025-05-01 DOI: 10.1016/j.omx.2025.100412

Prof. Xavier Mateos (Guest Editors), Prof. Akira Yoshikawa (Guest Editors), Prof. Francesc Díaz (Guest Editors)

引用次数: 0

Withdrawal notice to: “Methane sensors based on ZnGa2O4 ceramics with addition of Er for combustion monitoring systems” [Opt. Mater. X 26C 100409] 撤销通知：“燃烧监测系统中基于ZnGa2O4陶瓷添加Er的甲烷传感器”[Opt. Mater.][26c100409]

Q2 Engineering

Optical Materials: X

Pub Date : 2025-05-01 DOI: 10.1016/j.omx.2025.100413

Аleksei V. Almaev , Zhakyp T. Karipbayev , Ernar B. Zhurkin , Nikita N. Yakovlev , Olzhas I. Kukenov , Alexandr O. Korchemagin , Gulzhanat A. Akmetova-Abdik , Kuat K. Kumarbekov , Amangeldy M. Zhunusbekov , Leonid A. Mochalov , Ekaterina A. Slapovskaya , Anatoli I. Popov

引用次数: 0

Study of the effect of phase formation processes on the change in optical and thermal properties of Nd2Zr2O7 ceramics with a pyrochlore structure 研究相形成过程对具有热核结构的 Nd2Zr2O7 陶瓷的光学和热学特性变化的影响

Q2 Engineering

Optical Materials: X

Pub Date : 2025-03-07 DOI: 10.1016/j.omx.2025.100410

Artem L. Kozlovskiy , Dmitriy I. Shlimas , Natalya Volodina , Gulnaz ZhMoldabayeva , Mussa Kabiyev , Marina Konuhova

The paper presents the results of studies of the influence of phase formation processes with variations in annealing temperature on the processes of stabilization of the crystal structure, optical and thermal properties of Nd₂Zr₂O₇ ceramics, which have great potential for use in optoelectronic applications due to the transitions of Nd³ ions, as well as high stability to external factors with the possibility of creating transparent ceramics. During the conducted studies it was established that the stabilization temperature of the Nd₂Zr₂O₇ phase is 1100–1250 °C, at which the throughput is maximum, and the thermal conductivity coefficient is about 2.1–2.2 W/m × K. The assessment of phase transformations and changes in optical properties revealed that an elevation in the annealing temperature, leading to stabilization of the Nd₂Zr₂O₇ phase, leads to a decrease in the concentration of oxygen vacancies in the structure of ceramics; however, at temperatures above 1200 °C, the observed growth in oxygen vacancies is due to the effects of substitution of Zr⁴⁺ cations by Nd³⁺ cations, which results in formation of additional oxygen vacancies in the structure, alongside impurity inclusions in the form of a cubic phase of Zr(Nd)O₂, which is a product of phase polymorphic transformations during high-temperature annealing. Alterations in the thermophysical properties of Nd₂Zr₂O₇ ceramics are directly dependent on phase formation processes and associated changes in the concentration of oxygen vacancies, which are the determining factor influencing the heat transfer rate.

本文介绍了不同退火温度下相形成过程对Nd2Zr2O7陶瓷晶体结构、光学和热性能稳定过程的影响的研究结果。Nd2Zr2O7陶瓷由于Nd3离子的跃迁在光电应用中具有很大的潜力，并且对外界因素具有很高的稳定性，有可能制成透明陶瓷。研究结果表明，Nd2Zr2O7相的稳定温度为1100 ~ 1250℃，在此温度下通量最大，导热系数约为2.1 ~ 2.2 W/m × k。相变和光学性质的变化表明，退火温度的升高导致Nd2Zr2O7相的稳定，导致陶瓷结构中氧空位浓度的降低；然而，在1200°C以上的温度下，观察到的氧空位的增长是由于Nd3+阳离子取代Zr4+阳离子的影响，这导致结构中形成额外的氧空位，以及在高温退火过程中形成的立方相Zr(Nd)O2杂质夹杂物，这是相多晶化转变的产物。Nd2Zr2O7陶瓷的热物理性质的变化直接取决于相形成过程和相关的氧空位浓度的变化，这是影响传热速率的决定性因素。

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引用次数: 0

Methane sensors based on ZnGa2O4 ceramics with addition of Er for combustion monitoring systems 燃烧监测系统中基于ZnGa2O4陶瓷添加Er的甲烷传感器

Q2 Engineering

Optical Materials: X

Pub Date : 2025-03-07 DOI: 10.1016/j.omx.2025.100409

Аleksei V. Almaev , Zhakyp T. Karipbayev , Ernar B. Zhurkin , Nikita N. Yakovlev , Olzhas I. Kukenov , Alexandr O. Korchemagin , Gulzhanat A. Akmetova-Abdik , Kuat K. Kumarbekov , Amangeldy M. Zhunusbekov , Leonid A. Mochalov , Ekaterina A. Slapovskaya , Anatoli I. Popov

Ceramic pellets of pure ZnGa₂O₄ and ZnGa₂O₄ with Er-addition are synthesized and their structural and gas-sensitive properties are investigated. The addition of Er leads to the formation of a second Er₃Ga₅O₁₂ phase in the ZnGa₂O₄ matrix and a larger active surface which allows an 11.1-fold increase in the response of ZnGa₂O₄ to 10⁴ ppm of CH₄. At the maximum response temperature corresponding to 650 °C, the responses to 100 and 10⁴ ppm of CH₄ for ZnGa₂O₄ with Er addition were 2.91 a.u. and 20.74 a.u., respectively. ZnGa₂O₄ with Er addition is characterized by a wide dynamic range of CH₄ concentrations, from 100 ppm to 20000 ppm, weak dependence of gas-sensitive characteristics on humidity in the relative humidity range of 30–70 %, weak changes of gas-sensitive characteristics under cyclic gas exposure. The samples also demonstrate high responses to NO₂ and H₂, which at a gas concentration of 100 ppm and a temperature of 650 °C are 3.37 a.u. and 4.77 a.u., respectively. A plausible mechanism of the sensing effect of ZnGa₂O₄ with Er addition is proposed and prospects for the development of high-temperature CH₄ sensors based on the studied samples for combustion monitoring systems and determination of the ideal fuel/air mixture are discussed.

合成了纯ZnGa2O4和掺铒ZnGa2O4陶瓷球团，并对其结构和气敏性能进行了研究。添加Er后，ZnGa2O4基体中形成了第二个Er3Ga5O12相，活性表面增大，使得ZnGa2O4对104ppm CH4的响应提高了11.1倍。在最高响应温度为650℃时，添加Er的ZnGa2O4对CH4浓度为100和104 ppm时的响应分别为2.91 a.u.和20.74 a.u.。掺铒ZnGa2O4的CH4浓度动态范围为100 ~ 20000 ppm，相对湿度在30 ~ 70%范围内气敏特性对湿度的依赖性较弱，循环气体暴露下气敏特性变化较弱。样品对NO2和H2也有较高的响应，在气体浓度为100 ppm和温度为650℃时，NO2和H2分别为3.37 a.u.和4.77 a.u.。提出了添加Er的ZnGa2O4传感效果的合理机理，并讨论了基于所研究样品的高温CH4传感器的发展前景，用于燃烧监测系统和理想燃料/空气混合物的测定。

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引用次数: 0

Spatial mapping of optical constants and thickness variations in ITO films and SiO2 buffer layers ITO薄膜和SiO2缓冲层光学常数和厚度变化的空间映射

Q2 Engineering

Optical Materials: X

Pub Date : 2025-03-07 DOI: 10.1016/j.omx.2025.100408

I. Aulika, P. Paulsone, E. Laizane, J. Butikova, A. Vembris

In this work, we present detailed spectroscopic ellipsometry (SE) measurements across thirty indium tin oxide In₂O₃–SnO₂ (ITO) substrates, providing insights into variations in the complex refractive index

\tilde{N}

for the same commercial ITO material. This study includes an analysis of the distribution of ITO surface roughness, ITO thickness, SiO₂ buffer layer thickness, and the complex refractive index of ITO including electrical resistivity and its gradient. The SE mapping, conducted over a (1.5 × 1.5) cm scan area on multiple substrates of (2.5 × 2.5) cm size, reveals uniformity in above parameters within single ITO substrate. However, substantial thickness variations in the SiO₂ buffer layer along with fluctuations in the

\tilde{N}

of ITO are observed across the set of substrates. Our findings underscore the importance of individually assessing each ITO substrate's optical properties prior to additional layer deposition, as this precision is essential for reliable investigations of other materials, such as organic compounds in OLEDs, in both ex-situ and in-situ studies. Additionally, this article provides comprehensive optical property data for ITO substrates consisting of soda lime float glass coated with a thin SiO₂ buffer layer.

在这项工作中，我们提出了30个氧化铟锡In2O3-SnO2 （ITO）衬底的详细光谱椭偏（SE）测量，提供了对相同商业ITO材料的复折射率N ~变化的见解。本研究分析了ITO表面粗糙度、ITO厚度、SiO2缓冲层厚度的分布，以及ITO的复折射率（包括电阻率及其梯度）。在（2.5 × 2.5） cm尺寸的多个基板上进行（1.5 × 1.5） cm扫描区域的SE映射，揭示了单个ITO基板内上述参数的均匀性。然而，在整个衬底上观察到SiO2缓冲层的大量厚度变化以及ITO Ñ的波动。我们的研究结果强调了在附加层沉积之前单独评估每个ITO衬底光学特性的重要性，因为这种精度对于在非原位和原位研究中可靠地研究其他材料（例如oled中的有机化合物）至关重要。此外，本文还提供了由涂有薄SiO2缓冲层的钠石灰浮法玻璃组成的ITO基板的综合光学性能数据。

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引用次数: 0

La doped Lu2O3 scintillator doed Lu2O3闪烁器

Q2 Engineering

Optical Materials: X

Pub Date : 2025-02-23 DOI: 10.1016/j.omx.2025.100405

Jarek Glodo, Yimin Wang, Urmila Shirwadkar, Lakshmi Soundara Pandian

Lu₂O₃ has emerged as a highly attractive host material for gamma-ray detection, primarily due to its high density (9.4 g/cm³) and effective atomic number (68). Various dopants have been explored to enhance its scintillation properties, with notable examples including Eu³⁺ and Yb³⁺. While Eu³⁺ doping results in high luminosity, it suffers from a prolonged decay time in the millisecond range. On the other hand, Yb³⁺ produces a fast scintillation response in the nanosecond range, but at the cost of a significantly lower light yield. Both dopants present limitations for gamma-ray spectroscopy.

Recently, we developed a novel variant of Lu₂O₃ doped with La³⁺. Given the high melting point of the host material (2490 °C), ceramic consolidation techniques were employed during synthesis, leveraging the optically isotropic cubic structure of the material. This composition offers a balanced set of properties, exhibiting a light yield as high as 20,000 photons/MeV and two dominant decay time components at 530 ns and 1230 ns. Additionally, the energy resolution at 662 keV was measured to be 5.3 %, which can be attributed to the material's highly proportional response.

Optimization of La³⁺ concentration revealed that the best results were achieved at a doping level of around 5 %. The material demonstrated excellent timing properties, with a fast rise time, <600 ps, and a single-channel timing resolution measured at 511 keV is 307ps. This composition is highly suited for radiation detection applications where intrinsic background noise is not a concern, such as in radiography. Furthermore, its superior timing characteristics and high stopping power make it attractive for Positron Emission Tomography (PET).

由于其高密度（9.4 g/cm3）和有效原子序数（68），Lu2O3已成为一种极具吸引力的伽马射线探测主体材料。人们已经探索了各种掺杂剂来增强其闪烁性能，其中著名的例子包括Eu3+和Yb3+。虽然Eu3+掺杂导致高亮度，但它的衰减时间在毫秒范围内延长。另一方面，Yb3+在纳秒范围内产生快速的闪烁响应，但代价是光产率明显降低。这两种掺杂剂对伽马射线光谱学都有限制。最近，我们开发了一种新型的掺La3+的Lu2O3。考虑到主体材料的高熔点（2490°C），在合成过程中采用了陶瓷固结技术，利用材料的光学各向同性立方结构。该组合物提供了一组平衡的特性，显示出高达20,000光子/MeV的光产率和530 ns和1230 ns的两个主要衰变时间分量。此外，662 keV时的能量分辨率测量为5.3%，这可归因于材料的高度比例响应。对La3+的浓度进行优化，结果表明，当La3+的掺杂浓度为5%左右时，效果最好。该材料表现出优异的时序特性，具有快速的上升时间，<600 ps，在511 keV下测量的单通道时序分辨率为307ps。这种组合物非常适合于辐射检测应用，在这些应用中，固有的背景噪声是不受关注的，例如在放射照相中。此外，其优越的时序特性和高阻挡能力使其成为正电子发射断层扫描（PET）的理想选择。

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引用次数: 0

CsPbCl3:Yb3+ nanocrystals: Adverse effects of colloidally stable ytterbium-rich reaction by-products on luminescent down-conversion performance CsPbCl3:Yb3+纳米晶体：胶体稳定富镱反应副产物对发光下转换性能的不利影响

Q2 Engineering

Optical Materials: X

Pub Date : 2025-02-22 DOI: 10.1016/j.omx.2025.100407

Mathis Van de Voorde , Damien Hudry , Dmitry Busko , Bryce S. Richards , Rebecca Saive

The development of near infra-red (NIR) emitting down-converters is a promising route for improving photovoltaic output through efficient light management. Quantum-cutting Yb³⁺-doped CsPbCl₃ nanocrystals (NCs) are interesting for this application due to their high photoluminescence quantum yields (PLQY >100 %) and attractive NIR spectral properties which include high absorption cross section and minimal overlap between absorption and emission spectra. In this work, we fabricated CsPbCl₃:Yb³⁺ NCs with the hot-injection method and studied them using structural/optical characterization methods such as x-ray diffraction, scanning transmission electron microscopy, energy-dispersive x-ray spectroscopy, fluorescence lifetime and quantum yield measurements. We found that the hot-injection method is susceptible to the formation of colloidally stable Yb-rich reaction by-products. After separating these by-products from the NCs, NIR PLQY increased by a relative 46 %. Although the PLQY values recorded in this study are 4–7 times lower than in other studies, these findings may explain some discrepancies in photoluminescence efficiency reported with this material.

近红外（NIR）发射下变换器的发展是通过有效的光管理来提高光伏输出的一条有前途的途径。量子切割Yb3+掺杂CsPbCl3纳米晶体（nc）由于其高光致发光量子产率（PLQY > 100%）和吸引人的近红外光谱特性（包括高吸收横截面和吸收和发射光谱之间最小重叠）而对该应用很感兴趣。本文采用热注射法制备了CsPbCl3:Yb3+ NCs，并利用x射线衍射、扫描透射电子显微镜、能量色散x射线光谱、荧光寿命和量子产率等结构/光学表征方法对其进行了研究。我们发现热注入法容易形成胶体稳定的富镱反应副产物。将这些副产物与nc分离后，NIR PLQY相对增加了46%。虽然本研究记录的PLQY值比其他研究低4-7倍，但这些发现可能解释了该材料报道的光致发光效率的一些差异。

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引用次数: 0

Radiation-induced degradation effects of optical properties of MgO ceramics caused by heavy ion irradiation 重离子辐照对MgO陶瓷光学性能的辐射降解效应

Q2 Engineering

Optical Materials: X

Pub Date : 2025-02-20 DOI: 10.1016/j.omx.2025.100406

Maxim V. Zdorovets , Artem A. Kozlovskiy , Gulnaz ZhMoldabayeva , Igor A. Ivanov , Marina Konuhova

The paper presents the results of a study of the connection between structural changes caused by irradiation with heavy Xe²²⁺ ions in MgO ceramics, which are characteristic of the damage accumulation caused by exposure to nuclear fuel fission fragments. Interest in this type of ceramics, as one of the promising classes of dielectrics, is due to the potential for using them as materials for creating a matrix that holds fissile nuclear fuel, and in the case of consideration of these ceramics as dopants used to enhance the resistance of inert matrices to destruction caused by irradiation. The obtained assessment results of the alterations in the transmittance coefficient for irradiated ceramics contingent upon the irradiation fluence indicate the transmittance degradation of irradiated ceramics in the UV range, caused by the accumulation of structural distortions caused by irradiation, alongside a growth in the concentration of absorbing centers and oxygen vacancies. It has been established that the dominant type of defects in the damaged layer are oxygen vacancies, the accumulation of which occurs due to deformation distortions and the rupture of chemical bonds. At the same time, the observed change in the crystal structure volume is due to the formation of complex defects of the Mg + V_O type, the formation of which results in deformation broadening of the crystal lattice parameters.

本文研究了重Xe22+离子辐照引起的MgO陶瓷结构变化与核燃料裂变碎片损伤积累之间的联系。对这种陶瓷的兴趣，作为一种有前途的介电材料，是由于有可能使用它们作为材料来制造容纳可裂变核燃料的基质，在这种情况下，考虑这些陶瓷作为掺杂剂，用于增强惰性基质对辐射造成的破坏的抵抗力。所获得的辐照陶瓷透光系数随辐照影响变化的评估结果表明，辐照陶瓷在紫外范围内的透光率下降是由于辐照引起的结构畸变的积累，同时吸收中心和氧空位的浓度也在增加。已经确定，损伤层中的主要缺陷类型是氧空位，其积累是由于变形变形和化学键断裂造成的。同时，观察到的晶体结构体积的变化是由于Mg + VO型复杂缺陷的形成，其形成导致晶格参数的变形加宽。

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引用次数: 0

Charge trapping in SiO2 substrate during electron beam deposition of CaF2 thin films of different thicknesses 电子束沉积不同厚度CaF2薄膜时SiO2衬底中的电荷捕获

Q2 Engineering

Optical Materials: X

Pub Date : 2025-02-01 DOI: 10.1016/j.omx.2025.100400

Marina Romanova , Sergii Chertopalov , Yuri Dekhtyar , Ladislav Fekete , Ján Lančok , Michal Novotný , Petr Pokorný , Anatoli I. Popov , Hermanis Sorokins , Aleksandr Vilken

The charge trapping phenomenon in the SiO₂ layer of Si/SiO₂ substrates during the electron beam deposition of CaF₂ thin films of varying thicknesses (50–277 nm) was studied. Photoelectron emission (PE) spectroscopy was employed to analyze electron trapping mechanisms induced by the deposition process. Distinct peaks corresponding to electron traps in the SiO₂ layer were identified in the PE spectra of CaF₂ films. The intensity of these peaks varied with the film thickness and the accumulated electron irradiation dose. The study also investigated the relaxation of the PE spectra in both vacuum and air environments. In a vacuum, the PE peaks and integrated PE intensity remained stable for at least 24 h for CaF₂ films of all thicknesses. When exposed to air, the PE peaks persisted for several days in films 125 nm thick or thinner but relaxed within several hours in 277 nm films. This rapid relaxation was attributed to a relatively high irradiation dose (about 2.5 mC) obtained during the fabrication of the 277 nm film, leading to an increased concentration of ionized F centers at the SiO₂–CaF₂ interface and the formation of (O^2–-V_A) centers upon air exposure. The relaxation of the PE spectrum intensity was attributed to electron transfer from SiO₂ traps to (O^2–-V_A) centers. Furthermore, the possibility of a 260 nm electron escape depth for CaF₂ material was confirmed.

研究了电子束沉积不同厚度CaF2薄膜（50 ~ 277 nm）时Si/SiO2衬底SiO2层中的电荷俘获现象。利用光电子发射光谱（PE）分析了沉积过程中引起的电子捕获机制。在CaF2薄膜的PE光谱中发现了与SiO2层中电子阱对应的明显峰。这些峰的强度随薄膜厚度和累积电子辐照剂量的变化而变化。研究了真空和空气环境下PE谱的弛豫。在真空条件下，所有厚度的CaF2薄膜的PE峰和PE综合强度至少在24 h内保持稳定。当暴露于空气中时，在125 nm厚或更薄的薄膜中，PE峰持续数天，而在277 nm薄膜中，PE峰在数小时内松弛。这种快速弛豫归因于277 nm薄膜制备过程中获得的相对较高的辐照剂量（约2.5 mC），导致在SiO2-CaF2界面处电离F中心浓度增加，并在空气暴露时形成（O2—VA）中心。PE谱强度的弛豫是由于电子从SiO2陷阱转移到（O2—VA）中心。此外，还证实了CaF2材料的电子逃逸深度为260 nm的可能性。

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引用次数: 0

Evaluation of the optical, structural, morphological and electronic properties of Rb3Bi2I9 Perovskites films prepared by Sequential Evaporation 对顺序蒸发法制备的 Rb3Bi2I9 Perovskites 薄膜的光学、结构、形态和电子特性的评估

Q2 Engineering

Optical Materials: X

Pub Date : 2025-02-01 DOI: 10.1016/j.omx.2024.100397

G. Gordillo , O.G. Torres , C.A. Celis , M. Reinoso , J I Clavijo

Toxicity and poor stability remain major barriers to large-scale production of hybrid organic-inorganic lead halide perovskite solar cells. Considering the isoelectronic nature of lead (II) and bismuth (III) ions, stable and non-toxic alternatives for developing photovoltaic devices could potentially be found. Rb₃Bi₂I₉ perovskite films inherently suffer from unavoidable pinhole defects and poor surface morphology, which limit device performance. In this work we explored a dual-source thermal sequential evaporation approach to growth uniform and pinhole-free morphology of Rb₃Bi₂I₉ polycrystalline thin films. The influence of post-deposition annealing in a high-pressure N2 atmosphere on the structural, optical, morphological, and electronic properties of the resulting films was studied experimentally using X-ray diffraction (XRD), optical spectrophotometry, scanning electron microscopy (SEM), and computationally via Density Functional Theory (DFT) calculations. The results revealed that post deposition annealing significantly improves both the morphology and degradation processes of Rb₃Bi₂I₉ films, when they are exposed to environmental conditions for long periods of time.

毒性和稳定性差仍然是阻碍有机-无机卤化铅钙钛矿混合太阳能电池大规模生产的主要障碍。考虑到铅（II）和铋（III）离子的等电子性质，可能会找到稳定且无毒的光伏器件替代品。Rb3Bi2I9钙钛矿薄膜本身存在不可避免的针孔缺陷和较差的表面形貌，这限制了器件的性能。在这项工作中，我们探索了双源热顺序蒸发方法来生长均匀和无针孔的Rb3Bi2I9多晶薄膜。利用x射线衍射（XRD）、光学分光光度法、扫描电镜（SEM）和密度泛函理论（DFT）计算，研究了高压N2气氛下沉积后退火对薄膜结构、光学、形态和电子性能的影响。结果表明，当Rb3Bi2I9薄膜长时间暴露在环境条件下时，沉积后退火显著改善了薄膜的形貌和降解过程。

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引用次数: 0