Silicon Carbide 4H Polytype (4H-SiC) and Diamond wide bandgap semiconductors are promising detector materials for fusion environments. Threshold energy nuclear reactions provide information on the energy of impinging fast neutrons and the combination of low intrinsic carrier concentration with high thermal conductivity makes these semiconductors suitable for high-temperature applications, especially for neutron monitoring in tritium production through ITER breeding blankets. While the carrier properties of SiC and Diamond offer interesting charge collection dynamics from room temperature up to 200 °C, the stability of their detection performance at high temperatures above 200 °C remains to be confirmed. To investigate this, we conducted a measurement campaign in a fast neutron field representative of fusion reactors at the GENESIS (Generator of Neutrons for Science and IrradiationS) research platform of LPSC (Laboratoire de Physique Subatomique et de Cosmologie) laboratory in Grenoble, France. Both 4H-SiC and Diamond sensors were irradiated with 14 MeV fast neutrons from a D-T neutron generator while encapsulated in a heating device, recording current signals from room temperature up to 500 °C. Using a direct measurement method of charge carrier collection dynamics as a function of applied bias voltage and temperature by pulse shape analysis provided information on velocity drift and collected charge. The results offer a first representative study of charge carrier mobility behavior with increasing temperature up to 500 °C. The stability of performance in terms of CCE (charge collection efficiency) has been demonstrated for SiC from room temperature up to 500 °C, while Diamond experiences a CCE drop of 60% between 200 °C and 300 °C.
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