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Effect of Eu and Mn co-doping on temperature dependent dielectric relaxation behaviour and electric conduction mechanisms of bismuth ferrite 掺杂 Eu 和 Mn 对铋铁氧体随温度变化的介电弛豫行为和导电机制的影响
IF 1.7 4区 材料科学 Q3 Engineering Pub Date : 2024-05-10 DOI: 10.1007/s10832-024-00346-0
Amod Kumar, Aliva Panigrahi, Mukesh Shekhar, Lawrence Kumar, Pawan Kumar

The temperature dependent microscopic conduction processes and dielectric relaxations in Eu and Mn co-doped multiferroic bismuth ferrite have been examined using complex frequency-dependent ac conductivity, electric modulus and complex impedance examinations. The modified Debye’s function was used to explore the dispersion behaviour of the dielectric constant. The correlated barrier hopping concept is supported by the frequency variation in ac conductivity at various temperatures, which follows Jonscher’s power law. It was observed that when the co-doping concentration is low, the thermally assisted correlated barrier hopping (CBH) conduction model is better suited for the present samples whereas the overlapping large polaron tunnelling (OLPT) conduction model is better suited for higher co-doping concentrations. By looking at scaling curves for imaginary impedance (Z'') and modulus (M''), thermally induced relaxation processes have been demonstrated. It can be shown from a comparison of the Z'' and M'' spectra that charge carrier motion, particularly the dominance of short-range charge carriers which is effective at low temperatures while long-range charge carriers which is effective at high temperatures, leads to dielectric relaxation. By looking at semi-circular arcs on the Nyquist plot, it can be shown that at high temperature the electrical conduction process for the nanocrystalline sample is influenced by both grain and grain boundaries contributions. According to the study of ac conductivity under different temperatures, all compounds transport electricity with the help of electronic hopping, oxygen vacancy movement, or/and the production of the defects.

利用随频率变化的复合交流电导率、电模量和复合阻抗检测,研究了Eu和Mn共掺杂多铁素体铋铁氧体中随温度变化的微观传导过程和介电弛豫。修正的德拜函数被用来探索介电常数的分散行为。在不同温度下,交流电导率的频率变化遵循 Jonscher 的幂律,这支持了相关势垒跳变的概念。据观察,当共掺杂浓度较低时,热辅助相关势垒跳变(CBH)传导模型更适合当前的样品,而重叠大极子隧道(OLPT)传导模型则更适合较高的共掺杂浓度。通过观察假想阻抗(Z'')和模量(M'')的缩放曲线,证明了热诱导的弛豫过程。通过比较 Z''和 M''光谱可以看出,电荷载流子运动,特别是短程电荷载流子在低温下的主导作用,以及长程电荷载流子在高温下的主导作用,导致了介电弛豫。通过观察奈奎斯特图上的半圆弧,可以发现在高温下,纳米晶样品的导电过程受到晶粒和晶界的双重影响。根据对不同温度下交流导电性的研究,所有化合物都是在电子跳变、氧空位移动或/和缺陷产生的帮助下导电的。
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引用次数: 0
On the mass action law and the power law response in tin dioxide gas sensors 论二氧化锡气体传感器的质量作用定律和幂律响应
IF 1.7 4区 材料科学 Q3 Engineering Pub Date : 2024-05-08 DOI: 10.1007/s10832-024-00351-3
Daniel A. Mirabella, Paula M. Desimone, Celso M. Aldao

The electrical resistance of gas sensors, based on polycrystalline metal-oxide semiconductors, obeys a power-law response with the pressure of different gases (R ~ pγ). The exponent γ can be derived resorting to the mass action law and its value depends on chemical reactions that take place at the surface of the grains. To explain the gas sensitivity, we revisit two conceptual models, regularly used in the literature: the ionosorption and the vacancy models. We show that they predict different values for the exponent γ. Also, the consequences of considering the bulk oxygen vacancies as deep levels are analyzed. Comparison of γ values obtained from both conceptual models with those found in experiments can indicate what mechanisms are possible to occur.

基于多晶金属氧化物半导体的气体传感器的电阻与不同气体的压力(R ~ pγ)呈幂律响应关系。指数 γ 可根据质量作用定律推导得出,其值取决于晶粒表面发生的化学反应。为了解释气体敏感性,我们重新审视了文献中经常使用的两个概念模型:离子吸附模型和空位模型。此外,我们还分析了将块状氧空位视为深层的后果。将这两种概念模型得出的 γ 值与实验中发现的值进行比较,可以指出可能发生的机制。
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引用次数: 0
Influence of lithium on Cu-doped ZnO thin films fabricated via sol-gel spin coating technique for improved NO2 gas sensing applications 锂对通过溶胶-凝胶旋涂技术制备的掺铜氧化锌薄膜的影响,用于改进二氧化氮气体传感应用
IF 1.7 4区 材料科学 Q3 Engineering Pub Date : 2024-04-19 DOI: 10.1007/s10832-024-00350-4
K. K. Jasmi, T. Anto Johny, V. S. Siril, K. N. Madhusoodanan

We demonstrate the influence of lithium on copper-doped ZnO-based thin films for improved NO2 gas sensing applications fabricated via the sol-gel spin coating technique. Structure studies confirmed hexagonal wurtzite structure and morphological analysis showed evenly dispersed, agglomerated spherical particles with an average grain size ranging from 25.94 to 30.79 nm. Lithium-doped Cu-ZnO with more surface oxygen vacancies and a higher carrier density demonstrated outstanding NO2 gas sensitivity, excellent repeatability, excellent stability, and high selectivity at 210 °C. A possible gas-sensing mechanism is also discussed and correlated with structural, morphological, spectral, and electrical parameters.

我们展示了锂对铜掺杂氧化锌薄膜的影响,该薄膜是通过溶胶-凝胶旋涂技术制造的,用于改进二氧化氮气体传感应用。结构研究证实其为六方菱锰矿结构,形态分析表明其为均匀分散的团聚球形颗粒,平均粒径为 25.94 至 30.79 nm。锂掺杂的 Cu-ZnO 具有更多的表面氧空位和更高的载流子密度,在 210 ℃ 下具有出色的二氧化氮气体灵敏度、卓越的重复性、出色的稳定性和高选择性。此外,还讨论了可能的气体传感机制,并将其与结构、形态、光谱和电学参数联系起来。
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引用次数: 0
Effect of annealing temperature on the structure and dielectric characterization of ITO thin films on a boro-float substrate prepared by radio frequency sputtering 退火温度对射频溅射法制备的浮法基底上的 ITO 薄膜的结构和介电特性的影响
IF 1.7 4区 材料科学 Q3 Engineering Pub Date : 2024-03-26 DOI: 10.1007/s10832-024-00348-y
A. Hakamy, A. M. Mebed, A. Sedky, Alaa M. Abd-Elnaiem

The effect of annealing temperature (Ta= 200, 250, and 300 °C) on the structural properties, ac conductivity, and complex dielectric constants (({epsilon }^{{prime }}) and ({epsilon }^{{prime }{prime }})) of indium-doped tin oxide (ITO) thin films (~ 90 nm thick)/0.5 mm boro-float substrates (BFS) synthesized by radio frequency (RF) sputtering is investigated. The X-ray diffraction (XRD) examination demonstrated that indium was successfully substituted with tin atoms to form ITO films and the crystallite size for the cubic phase, as well as particle size, were impacted by Ta. The real part of complex dielectric constants (({epsilon }^{{prime }})) was significantly reduced for all ITO/BFS from the range of 2.7 × 104–5.1 × 104 to 5.3–19 as the frequency (f) was increased to 0.25 Hz, while it remained constant for further increases in f. The value of ({epsilon }^{{prime }}) for the as-prepared ITO/BFS was increased as Ta increased up to 250 °C, then was decreased at Ta=300 °C. A similar finding was detected for the loss factor with no observation of any relaxation peaks. The Q-factor was increased for all ITO/BFS as f increased to 100 Hz and then was reduced with increasing f up to 20 MHz, while steadily increasing with Ta. The deduced frequency exponent is greater than 0.5 for the ITO/BFS, indicating their electronic conduction nature. The density of the localized states and hopping frequency of the ITO/BFS were increased by annealing at 200 °C, meanwhile was decreased for Ta = 300 °C. The binding energy was decreased from 0.647 eV for the as-prepared ITO/BFS to 0.518 eV by annealing at 200 °C, meanwhile was increased to 0.74 and 0.863 eV for Ta equals 250, and 300 °C, respectively. The Cole-Cole plots revealed a single semicircular arc for all films, and their corresponding equivalent circuit was analyzed. The equivalent bulk resistance was gradually decreased by annealing in the range of 200–300 °C, whereas the equivalent capacitance was increased. The resistance of grains and resistance of grain boundaries of the as-prepared ITO/BFS was gradually decreased by increasing Ta to 250 °C, while it was increased for Ta = 300 °C. These outcomes recommended the RF sputtered ITO/BFS for high-frequency devices, integrated circuits, and supercapacitors.

研究了退火温度(Ta= 200、250 和 300 °C)对通过射频溅射合成的掺铟氧化锡(ITO)薄膜(~ 90 nm 厚)/0.5 mm boro-float 衬底(BFS)的结构特性、交流电导率和复合介电常数(({epsilon }^{prime }}) 和({epsilon }^{prime }}) 的影响。5 mm 的溴化浮法基片 (BFS) 进行了研究。X 射线衍射 (XRD) 测试表明,铟成功地被锡原子取代,形成了 ITO 薄膜,立方相的结晶尺寸和颗粒大小受到 Ta 的影响。当频率(f)增加到 0.25 Hz 时,所有 ITO/BFS 的复介电常数({epsilon }^{prime }}/)的实部都从 2.7 × 104-5.1 × 104 的范围显著降低到 5.3-19 的范围。制备的 ITO/BFS 的 ({/epsilon}^{/prime}}/)值随着 Ta 升高到 250 °C而增大,然后在 Ta=300 °C 时减小。损耗因子也有类似的发现,但没有观察到任何弛豫峰。当 f 增大到 100 Hz 时,所有 ITO/BFS 的 Q 因子都增大了,然后随着 f 的增大而减小,直到 20 MHz,同时随着 Ta 的增大而稳步增大。推导出的 ITO/BFS 频率指数大于 0.5,表明它们具有电子传导性质。在 200 °C 退火时,ITO/BFS 的局部态密度和跳频增加,而在 Ta = 300 °C 时则降低。在 200 ℃ 退火时,ITO/BFS 的结合能从制备前的 0.647 eV 降至 0.518 eV,而在 Ta = 250 和 300 ℃ 时,结合能分别升至 0.74 和 0.863 eV。科尔-科尔图显示所有薄膜都有一个半圆弧,并分析了其相应的等效电路。在 200-300 °C 的退火温度范围内,等效体电阻逐渐减小,而等效电容则增大。将 Ta 升高到 250 ℃ 时,制备的 ITO/BFS 的晶粒电阻和晶界电阻逐渐减小,而当 Ta = 300 ℃ 时,晶粒电阻和晶界电阻增大。这些结果建议将射频溅射 ITO/BFS 用于高频器件、集成电路和超级电容器。
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引用次数: 0
Multi-phase structure and optimal properties of (Ba1-xCax)(Ti0.93Zr0.01Sn0.06)O3 ceramics in the MPB range MPB 范围内 (Ba1-xCax)(Ti0.93Zr0.01Sn0.06)O3 陶瓷的多相结构和最佳性能
IF 1.7 4区 材料科学 Q3 Engineering Pub Date : 2024-03-25 DOI: 10.1007/s10832-024-00345-1
Gambheer Singh Kathait, Vishal Rohilla, Surita Maini

(0.93 − x)BT − 0.01BZ − 0.06BS − xCT or (Ba1-xCax)(Ti0.93Zr0.01Sn0.06)O3 (abbreviated as BCZTS) ceramics were produced using the standard solid-state reaction for 0.045 ≤ x ≤ 0.07. For the samples, it was found that orthorhombic (Amm2), rhombohedral (R3m) and tetragonal (P4mm) structures coexisted in two phases as well as three phases with distinct phase fractions. The largest size of crystalline grains was achieved after doping with 0.055 mol% and 0.065 mol% Ca. The optimal properties (Pmax = 12.05 μC/cm2, Pr = 5.61 μC/cm2, Ec = 230 V/mm, d*33 = 404 pm/V, Qc = 6.44 µC/cm2, Tc = 102 °C) were obtained for x = 0.07 where it has been found that orthorhombic, rhombohedral, and tetragonal phases all occurred at the same time. For compositions in the MPB range, the energy storage characteristics indicate high energy storage efficiency for low value of Ca doping. Given all the developments, it is obvious that Ca, Zr and Sn-doped BCZTS ceramics would be a good choice for lead-free electronics.

(0.93 - x)BT - 0.01BZ - 0.06BS - xCT 或 (Ba1-xCax)(Ti0.93Zr0.01Sn0.06)O3 (简称 BCZTS)陶瓷。研究发现,这些样品的正方体(Amm2)、斜方体(R3m)和四方体(P4mm)结构共存于两相和三相中,且具有不同的相分数。在掺入 0.055 摩尔%和 0.065 摩尔%的钙后,结晶晶粒的尺寸最大。x = 0.07 时获得了最佳特性(Pmax = 12.05 μC/cm2,Pr = 5.61 μC/cm2,Ec = 230 V/mm,d*33 = 404 pm/V,Qc = 6.44 µC/cm2,Tc = 102 °C),发现正方体相、斜方体相和四方体相同时出现。对于 MPB 范围内的成分,储能特性表明在低掺杂钙值的情况下具有较高的储能效率。鉴于所有这些发展,掺杂钙、锆和锡的 BCZTS 陶瓷显然是无铅电子产品的良好选择。
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引用次数: 0
Effects of radius and electronegativity of donors on the microstructure and mechanical, thermal, and electrical properties of ZnO varistors 供体半径和电负性对氧化锌压敏电阻微观结构以及机械、热和电特性的影响
IF 1.7 4区 材料科学 Q2 MATERIALS SCIENCE, CERAMICS Pub Date : 2024-03-22 DOI: 10.1007/s10832-024-00349-x
Bo-wen Wang, Jia-zheng Lu, Peng-zhao Gao, Zhi-yao Fu, Zheng-long Jiang, Wei-wei Gong

In this paper, influence of radius and electronegativities of seven kinds of donors on the composition, microstructure, mechanical, thermal and electrical properties of ZnO varistors were investigated via XRD, SEM, XPS, mechanical, thermal and electrical properties tests. Results showed that when sintered at 1100 °C for 2 h, the obtained varistors exhibited a dense microstructure, where radius of donors played an important role on the grain size and size distribution of varistors; Mechanical properties and coefficient of thermal expansion of varistors were mainly affected by the radius of donors, with specimen 6# possessing the highest values of 123.46 MPa (σf), 80.47 GPa (Ef), and 6.58 × 10−6 °C−1 (λc), respectively; Values of E1mA and α initially increased and then decreased with the increase of donors’ radius, whereas those of JL and K exhibited opposite trends. E1mA and α had maximum values of 569.94 V mm–1 and 26.70, whereas JL and K possessed the lowest values of 2.31 μA⋅cm−2 and 1.35, respectively, when Co2+ worked as the donor (specimen 6#). The DC aging process of ZnO varistors obeyed the ion migration mechanism, the radius of donors can affect the number of it entering the ZnO lattice, which can limit the migration of zinc gaps via the formation of substitution and filling defects in the ZnO lattice. The electronegativity of donors can reduce the ion migration speed via the stronger electrostatic force, and specimen 6# possessed the lowest DC aging properties (KT = 1.68).

本文通过XRD、SEM、XPS、力学、热学和电学性能测试,研究了七种供体的半径和电负性对氧化锌压敏电阻的组成、微观结构、力学、热学和电学性能的影响。结果表明,在 1100 °C 下烧结 2 小时后,得到的变阻器呈现出致密的微观结构,其中供体半径对变阻器的晶粒大小和粒度分布起着重要作用;变阻器的力学性能和热膨胀系数主要受供体半径的影响,其中试样 6# 的热膨胀系数最高,为 123.46 MPa (σf)、80.47 GPa (Ef) 和 6.58 × 10-6 °C-1 (λc);E1mA 和 α 的值随着供体半径的增大先增大后减小,而 JL 和 K 的值则呈现相反的趋势。当 Co2+ 作为供体时(试样 6#),E1mA 和 α 的最大值分别为 569.94 V mm-1 和 26.70,而 JL 和 K 的最低值分别为 2.31 μA⋅cm-2 和 1.35。ZnO 变阻器的直流老化过程遵循离子迁移机制,供体的半径会影响其进入 ZnO 晶格的数量,从而通过在 ZnO 晶格中形成置换和填充缺陷来限制锌隙的迁移。供体的电负性可通过更强的静电力降低离子迁移速度,试样 6# 的直流老化性能最低(KT = 1.68)。
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引用次数: 0
Structural, electrical and optical investigation of half doped YTi0.5Mn0.5O3 perovskite compounds for optoelectronic devices 用于光电设备的半掺杂 YTi0.5Mn0.5O3 包晶化合物的结构、电学和光学研究
IF 1.7 4区 材料科学 Q2 MATERIALS SCIENCE, CERAMICS Pub Date : 2024-03-04 DOI: 10.1007/s10832-024-00344-2
Ghada Raddaoui, Omar Rejaiba, M. Nasri, Omayma Amorri, Kamel Khirouni, E. K. Hlil, J. Khelifi

The YTi0.5Mn0.5O3 (YTMO) perovskite was synthesized by the conventional solid-state method. The structural, electrical, dielectric and optical properties were investigated. The X-ray diffraction analysis and Rietveld refinements indicates that sample under study crystallizes in the orthorhombic structure with the Pmmm space group. The impedance spectroscopy studies show a relaxation phenomenon with non-Debye nature. The Nyquist plot confirms the presence of semicircles which, in turn, indicate the existence of both grain and grain boundary effect in the prepared ceramic. The study of AC conductivity has been discussed in detail and designated on the basis of the NSPT conduction mechanism. Activation energy was determined from DC conductivity as well as modulus spectra. The very equal values of the activation energies suggest that the process of the conduction mechanism and the relaxation behavior are similar. The behavior of dielectric constants was interpreted based on the Maxwell–Wagner’s theory of interfacial polarization. Thermodynamic parameters such as enthalpy, entropy have been calculated. From UV–Vis absorption spectrometry, the reflectance spectrum and the Kubelka-Munk model, reveal a direct and wide optical band gap evaluated at 4.69 eV. Moreover, the obtained Urbach energy (0.240 eV) confirms the presence of localized states in the YTMO structure. The extinction coefficient (k) was used to estimate the evolution of the refractive index n with the wavelength. Additionally, the refractive index (n) obeys to Cauchy relation. Furthermore, the dispersion coefficients were analyzed in the bases of Wemple and Di-Domenico model. The optical constants such as the skin depth and the optical conductivity were calculated and the results are discussed.

采用传统固态方法合成了 YTi0.5Mn0.5O3(YTMO)包晶石。对其结构、电学、介电和光学特性进行了研究。X 射线衍射分析和里特维尔德细化分析表明,所研究的样品结晶为 Pmmm 空间群的正交菱形结构。阻抗光谱研究显示了非戴贝性质的弛豫现象。奈奎斯特图证实了半圆形的存在,这反过来又表明制备的陶瓷中存在晶粒和晶界效应。在 NSPT 传导机制的基础上,详细讨论并指定了交流导电性的研究。活化能是根据直流导电率和模量光谱确定的。非常相等的活化能值表明传导机制过程和弛豫行为是相似的。介电常数的行为是根据麦克斯韦-瓦格纳的界面极化理论解释的。还计算了热力学参数,如焓、熵。紫外-可见吸收光谱、反射光谱和 Kubelka-Munk 模型显示,直接和宽的光带隙为 4.69 eV。此外,所获得的厄巴赫能(0.240 eV)证实了 YTMO 结构中存在局部态。消光系数(k)用于估算折射率 n 随波长的变化。此外,折射率(n)服从考奇关系。此外,还根据 Wemple 和 Di-Domenico 模型分析了色散系数。计算了光学常数,如皮层深度和光导率,并对结果进行了讨论。
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引用次数: 0
Electrocaloric and energy storage properties of Pb-free 1-x(0.6Ba(Zr0.2Ti0.8)O3 - 0.4(Ba0.7Ca0.3)TiO3)-x(BiTa0.5La0.5)O3 relaxor ferroelectric ceramics 无铅 1-x(0.6Ba(Zr0.2Ti0.8)O3-0.4(Ba0.7Ca0.3)TiO3)-x(BiTa0.5La0.5)O3弛豫铁电陶瓷的电致性和储能特性
IF 1.7 4区 材料科学 Q2 MATERIALS SCIENCE, CERAMICS Pub Date : 2024-01-16 DOI: 10.1007/s10832-023-00343-9
Nagarajan Sreekala Kiran Kumar, Pilikudlu Madhushree, Koppole Chandra Sekhar

This work highlights the electrocaloric (EC) and energy storage (ES) properties of 1-x(0.6Ba(Zr0.2Ti0.8)O3-0.4(Ba0.7Ca0.3)TiO3)-x(BiTa0.5La0.5)O3 (1-xBZCT-xBTL) ceramics with x = 0 to 0.05. The XRD studies revealed that inclusion of BTL content in BZCT does not induce any impurity phase. The peak splitting of BZCT near 2θ = 45(^circ) and 66(^circ) confirms the presence of morphotropic phase boundary corresponding to tetragonal and rhombohedral phases. Further, the solid solution formation of BZCT-BTL has suppressed its morphotropic phase boundary behaviour. The XRD, Raman and temperature dependent dielectric studies suggest the presence of pseudocubic phase in 1-xBZCT-xBTL at higher values of x = 0.025 and 0.05. Moreover, the inclusion of BTL boosts the diffused phase transition behaviour of BZCT ceramics. Further, BTL strengthened its relaxor nature due to a reduction in grain size as evidenced from SEM analysis. It is observed that the 0.99BZCT-0.01BTL ceramics show 95% efficiency and a maximum recoverable energy density of 479 mJ/cm3 at 100 kV/cm. Moreover, the electrocaloric temperature change and responsivity are found to be 1.06 K and 0.01 Kcm/kV near the transition temperature.

这项工作重点研究了 1-x(0.6Ba(Zr0.2Ti0.8)O3-0.4(Ba0.7Ca0.3)TiO3)-x(BiTa0.5La0.5)O3(1-xBZCT-xBTL)陶瓷(x = 0 至 0.05)的电致发光(EC)和储能(ES)特性。XRD 研究表明,在 BZCT 中加入 BTL 不会引起任何杂质相。BZCT 在 2θ = 45(^circ) 和 66(^circ)附近的峰分裂证实了与四方和斜方体相相对应的形态相边界的存在。此外,BZCT-BTL 的固溶体形成抑制了其各向异性相界行为。XRD、拉曼和随温度变化的介电研究表明,在 x = 0.025 和 0.05 的较高值时,1-xBZCT-xBTL 中存在假立方相。此外,BTL 的加入促进了 BZCT 陶瓷的扩散相变行为。此外,扫描电镜分析表明,由于晶粒尺寸减小,BTL 增强了其弛豫性。据观察,0.99BZCT-0.01BTL 陶瓷的效率为 95%,在 100 kV/cm 时的最大可回收能量密度为 479 mJ/cm3。此外,在过渡温度附近,电致冷温度变化和响应率分别为 1.06 K 和 0.01 Kcm/kV。
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引用次数: 0
Enhanced structure and microwave dielectric properties of low-temperature sintering Li2Mg1 − xCaxSiO4 ceramics by Ca2+ ion substitution 钙离子取代增强低温烧结Li2Mg1−xCaxSiO4陶瓷的结构和微波介电性能
IF 1.7 4区 材料科学 Q2 MATERIALS SCIENCE, CERAMICS Pub Date : 2023-12-05 DOI: 10.1007/s10832-023-00342-w
Wei Li, Jie Li, Yixin Chen, Kai Sun, Shuai Wang, Yingli Liu, Zhaoyun Duan

In this paper, the Ca2+ ion was chosen to substitute the Mg2+ ion of Li2MgSiO4 ceramics. Li2Mg1 − xCaxSiO4 (x = 0.0, 0.03, 0.06, 0.09, 0.12) ceramics materials were prepared by solid state reaction at low temperature (925 °C) with 2.5wt% Bi2O3 sintering aid. X-ray diffraction (XRD) results showed the ceramics presented the standard Lithium Magnesium Silicate phase formation, and no secondary phases appeared. Scanning electron microscopy (SEM) suggested that Ca2+ ions affected the densification of the prepared ceramics. Ca2+ ion substitution resulted in increasing relative density, enhancing microwave properties. Ca2+ ion substituted Mg2+ ion and formed a CaO4 structure, which affected microwave dielectric properties. With the substituted amount increase, the values of dielectric constant ε’ and quality factor Q×f gradually increased, and τf values increased from negative to positive values. When x = 0.09 and sintered at 925 °C, Ca2+ ion substitution gave ceramics excellent microwave properties: bulk density ρ = 2.479 g/cm3, relative density was 98.68%, dielectric constant ε’=6.59, dielectric loss tanδε = 0.0018, quality factor Q×f = 8976.9 GHz and temperature coefficient τf = 1.9 ppm/°C. This ceramic material has excellent microwave dielectric properties and holds a potential for use in integrated antenna and other electronic devices.

本文选择Ca2+离子代替Li2MgSiO4陶瓷中的Mg2+离子。采用低温(925℃)固相反应制备Li2Mg1−xCaxSiO4 (x = 0.0, 0.03, 0.06, 0.09, 0.12)陶瓷材料,助烧剂为2.5wt% Bi2O3。x射线衍射(XRD)结果表明,该陶瓷呈现标准的硅酸锂镁相形成,未出现二次相。扫描电镜(SEM)结果表明,Ca2+离子影响了制备的陶瓷的致密性。Ca2+离子取代增加了相对密度,提高了微波性能。Ca2+离子取代Mg2+离子形成CaO4结构,影响微波介电性能。随着取代量的增加,介电常数ε′和品质因子Q×f逐渐增大,τf值由负向正增大。当x = 0.09,在925℃下烧结时,Ca2+离子取代使陶瓷具有优异的微波性能:体积密度ρ = 2.479 g/cm3,相对密度为98.68%,介电常数ε′=6.59,介电损耗ε δ = 0.0018,品质因子Q×f = 8976.9 GHz,温度系数τf = 1.9 ppm/℃。这种陶瓷材料具有优异的微波介电性能,在集成天线和其他电子器件中具有潜在的应用前景。
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引用次数: 0
Comparative study of Mn2+ and Zr4+ co-substituted Zn-Co spinel ferrites as microwave absorbing materials in Ku (12.4–18 GHz) and K (18-26.5 GHz) frequency bands Mn2+和Zr4+共取代Zn-Co尖晶石铁氧体作为Ku (12.4-18 GHz)和K (18-26.5 GHz)频段吸波材料的比较研究
IF 1.7 4区 材料科学 Q2 MATERIALS SCIENCE, CERAMICS Pub Date : 2023-11-30 DOI: 10.1007/s10832-023-00341-x
Mandeep Kaur, Shalini Bahel

The present research work aims to address the rising demand for microwave-absorbing materials (MAMs) due to the relentless growth of detrimental electromagnetic wave pollution. Herein, the absorption behavior of manganese-zirconium co-substituted zinc-cobalt spinel ferrites with chemical composition Zn0.25Co0.75(MnZr)xFe2−2xO4 (0.05 ≤ x ≤ 0.25, ∆x = 0.05) were investigated in the Ku (12.4–18 GHz) and K (18-26.5 GHz) frequency bands. Samples of Mn-Zr-Zn-Co ferrites were successfully synthesized via the sol-gel citrate route with sintering at a temperature of 1000 °C for 6 h. Fourier transform infrared spectroscopy (FT-IR) confirmed the presence of two vibrational peaks in the spinel lattice structure. The complex dielectric permittivity and complex magnetic permeability were measured using a vector network analyzer (VNA). The composition MZ 0.15 outperformed all the prepared compositions by exhibiting a minimum reflection loss of -34.55 dB at a matching frequency of 15.09 GHz and a matching thickness of 2.7 mm in Ku-band and a reflection loss as low as -30.40 dB at a matching frequency of 25.48 GHz and a matching thickness of 1.5 mm in K-band. The obtained results indicate that the fabricated specimens have the potential for designing efficient microwave-absorbing materials in the Ku and K frequency bands.

目前的研究工作旨在解决由于有害电磁波污染的持续增长而对微波吸收材料(MAMs)的需求不断增加的问题。本文研究了化学成分为Zn0.25Co0.75(MnZr)xFe2−2xO4(0.05≤x≤0.25,∆x = 0.05)的锰锆共取代锌钴尖晶石铁氧体在Ku (12.4-18 GHz)和K (18-26.5 GHz)频段的吸收行为。采用溶胶-凝胶柠檬酸法制备了Mn-Zr-Zn-Co铁氧体样品,在1000℃下烧结6 h,傅里叶变换红外光谱(FT-IR)证实了尖晶石晶格结构中存在两个振动峰。采用矢量网络分析仪(VNA)测量复介电常数和复磁导率。组合物mz0.15优于所有制备的组合物,在匹配频率为15.09 GHz,匹配厚度为2.7 mm的ku波段,最小反射损耗为-34.55 dB,在匹配频率为25.48 GHz,匹配厚度为1.5 mm的k波段,反射损耗低至-30.40 dB。结果表明,制备的样品具有设计Ku和K波段高效吸波材料的潜力。
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Journal of Electroceramics
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