Pub Date : 2024-10-28DOI: 10.1007/s10832-024-00362-0
Sanjay Mathur
{"title":"Honoring a Legacy – Heartfelt Thanks to Our Former Editor-in-Chief!","authors":"Sanjay Mathur","doi":"10.1007/s10832-024-00362-0","DOIUrl":"10.1007/s10832-024-00362-0","url":null,"abstract":"","PeriodicalId":625,"journal":{"name":"Journal of Electroceramics","volume":"52 1","pages":"1 - 2"},"PeriodicalIF":1.7,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10832-024-00362-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142600717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ternary of PZN-xPZT relaxation ferroelectric ceramics were successfully prepared by conventional solid-phase reaction. With the increase of Pb(Zr, Ti)O3 (PZT) content, XRD analysis shows a gradual decrease of the inclusion crystal phase and a decrease in the formation of secondary phases such as Zn(NbO3)2, leading to a more homogeneous phase structure, which is conducive to the improvement of piezoelectric properties. SEM images and densitometric measurements show a decrease in grain size and an increase in the degree of densification of the ceramics, which contributes to the enhancement of the ability of reorientation of electrical domains and thus the improvement of piezoelectric response. The 0.4PZN-0.6PZT ceramic samples demonstrate favorable grain sizes and exhibit the following optimal properties: Tc = 272 ℃, d33 = 570 pC/N, kp = 0.67, εr = 2175, and tanδ = 1.6%. However, the ceramic sample of 0.45PZN-0.55PZT has better comprehensive properties (Tc = 261 ℃, d33 = 443 pC/N, kp = 0.59, εr = 1908, tanδ = 1.7%, Pr = 37.3 µC/cm2, Ps = 30.2 µC/cm2, Ec = 1.08 kV/mm). PZN-xPZT ceramics are well known for their excellent dielectric, Curie temperature, phase boundary modulation, piezoelectric and ferroelectric properties and are widely used in sensors and transducers.
{"title":"Phase boundary modulation and dielectric, piezoelectric and ferroelectric properties of PZN-xPZT ternary ceramics","authors":"Jianzhou Du, Haohao Yang, Zichen Mu, Cong Yang, Jingyi Yan, Yuansheng Chen","doi":"10.1007/s10832-024-00373-x","DOIUrl":"10.1007/s10832-024-00373-x","url":null,"abstract":"<div><p>Ternary of PZN-<i>x</i>PZT relaxation ferroelectric ceramics were successfully prepared by conventional solid-phase reaction. With the increase of Pb(Zr, Ti)O<sub>3</sub> (PZT) content, XRD analysis shows a gradual decrease of the inclusion crystal phase and a decrease in the formation of secondary phases such as Zn(NbO<sub>3</sub>)<sub>2</sub>, leading to a more homogeneous phase structure, which is conducive to the improvement of piezoelectric properties. SEM images and densitometric measurements show a decrease in grain size and an increase in the degree of densification of the ceramics, which contributes to the enhancement of the ability of reorientation of electrical domains and thus the improvement of piezoelectric response. The 0.4PZN-0.6PZT ceramic samples demonstrate favorable grain sizes and exhibit the following optimal properties: <i>T</i><sub>c</sub> = 272 ℃, <i>d</i><sub>33</sub> = 570 pC/N, <i>k</i><sub>p</sub> = 0.67, <i>ε</i><sub>r</sub> = 2175, and <i>tan</i>δ = 1.6%. However, the ceramic sample of 0.45PZN-0.55PZT has better comprehensive properties (<i>T</i><sub>c</sub> = 261 ℃, <i>d</i><sub>33</sub> = 443 pC/N, <i>k</i><sub>p</sub> = 0.59, <i>ε</i><sub>r</sub> = 1908, <i>tan</i>δ = 1.7%, <i>P</i><sub>r</sub> = 37.3 µC/cm<sup>2</sup>, <i>P</i><sub>s</sub> = 30.2 µC/cm<sup>2</sup>, <i>E</i><sub>c</sub> = 1.08 kV/mm). PZN-<i>x</i>PZT ceramics are well known for their excellent dielectric, Curie temperature, phase boundary modulation, piezoelectric and ferroelectric properties and are widely used in sensors and transducers.</p></div>","PeriodicalId":625,"journal":{"name":"Journal of Electroceramics","volume":"53 1","pages":"45 - 54"},"PeriodicalIF":1.7,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143919135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Researchers are actively prioritizing the development of ecologically friendly and energy-efficient materials for renewable energy devices, such as thermoelectric generators, to tackle the upcoming energy concerns. We have performed an extensive examination of the structural, phonon, electronic, thermoelectric, and thermodynamic properties of Cu-based chalcogenides TMCu3S4 (TM = V/Nb/Ta) for their prospective application in renewable energy technologies. The use of the GGA method within the framework of density functional theory (DFT) enables a thorough examination of exchange and correlation energy potentials using first-principles computations. Based on the computed structural parameters, it is evident that TaCu3S4 is the most stable compound among TMCu3S4 (TM = V/Nb/Ta) due to its lowest ground state energy. TB-mBJ produced improved energy bandgaps of VCu3S4, NbCu3S4, and TaCu3S4 are 0.575, 0.725, and 0.824 eV, respectively. The figure of merit (ZT) values for VCu3S4, NbCu3S4, and TaCu3S4 are 0.997, 0.946, and 0.943, respectively, at 50 K for constant chemical potential. These values render them exceedingly suitable for utilization in thermoelectric (TE) devices. The thermoelectric properties of Cu-based chalcogenides TMCu3S4 (TM = V/Nb/Ta) indicate that these materials have great promise for energy-related applications. The thermodynamic analysis reveals that the TMCu3S4 (TM = V/Nb/Ta) chalcogenide materials are thermally stabile.
{"title":"Density functional quantum screening of the structural, electronic, phonon, and thermophysical properties of Cu-based chalcogenides for interface thermal performance and energy applications","authors":"Zeesham Abbas, Kisa Fatima, Shafaat Hussain Mirza, Amna Parveen, Shabbir Muhammad","doi":"10.1007/s10832-024-00369-7","DOIUrl":"10.1007/s10832-024-00369-7","url":null,"abstract":"<div><p>Researchers are actively prioritizing the development of ecologically friendly and energy-efficient materials for renewable energy devices, such as thermoelectric generators, to tackle the upcoming energy concerns. We have performed an extensive examination of the structural, phonon, electronic, thermoelectric, and thermodynamic properties of Cu-based chalcogenides TMCu<sub>3</sub>S<sub>4</sub> (TM = V/Nb/Ta) for their prospective application in renewable energy technologies. The use of the GGA method within the framework of density functional theory (DFT) enables a thorough examination of exchange and correlation energy potentials using first-principles computations. Based on the computed structural parameters, it is evident that TaCu<sub>3</sub>S<sub>4</sub> is the most stable compound among TMCu<sub>3</sub>S<sub>4</sub> (TM = V/Nb/Ta) due to its lowest ground state energy. TB-mBJ produced improved energy bandgaps of VCu<sub>3</sub>S<sub>4</sub>, NbCu<sub>3</sub>S<sub>4</sub>, and TaCu<sub>3</sub>S<sub>4</sub> are 0.575, 0.725, and 0.824 eV, respectively. The figure of merit (ZT) values for VCu<sub>3</sub>S<sub>4</sub>, NbCu<sub>3</sub>S<sub>4</sub>, and TaCu<sub>3</sub>S<sub>4</sub> are 0.997, 0.946, and 0.943, respectively, at 50 K for constant chemical potential. These values render them exceedingly suitable for utilization in thermoelectric (TE) devices. The thermoelectric properties of Cu-based chalcogenides TMCu<sub>3</sub>S<sub>4</sub> (TM = V/Nb/Ta) indicate that these materials have great promise for energy-related applications. The thermodynamic analysis reveals that the TMCu<sub>3</sub>S<sub>4</sub> (TM = V/Nb/Ta) chalcogenide materials are thermally stabile.</p></div>","PeriodicalId":625,"journal":{"name":"Journal of Electroceramics","volume":"53 1","pages":"29 - 44"},"PeriodicalIF":1.7,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143919281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The need for microwave dielectric ceramics is steadily growing along with the rapid advancement of wireless communication technology. The preparation of Li3Mg2NbO6-xwt% LiF-TiO2-CaF2 (LMN-LTC, x = 4, 6, 8, 10) ceramics was carried out using the solid-state reaction method. The two-phase structure of the LMN-LTC ceramics was shown by XRD investigation, with the main phase being LMN and the second phase Ca(TiO3). Due to the influence of additive LTC, the microwave dielectric properties of the LMN ceramics, especially the temperature stability were successfully regulated to near zero. The LMN ceramic with the addition of 6wt% LTC sintered at 1050 °C for 6 h exhibits outstanding microwave dielectric properties: εr = 13.0, Q × f = 42,000 GHz, τf = 1.76 ppm/°C. It is shown that LMN-6wt% LTC ceramic is promising for wireless communication applications.
{"title":"Enhanced temperature stability of Li3Mg2NbO6-based ceramics by using LTC composite additives","authors":"Jingru Xie, Zhifen Fu, Qing Cheng, Chen Chen, Yubin She, Xiangyi Li","doi":"10.1007/s10832-024-00368-8","DOIUrl":"10.1007/s10832-024-00368-8","url":null,"abstract":"<div><p>The need for microwave dielectric ceramics is steadily growing along with the rapid advancement of wireless communication technology. The preparation of Li<sub>3</sub>Mg<sub>2</sub>NbO<sub>6</sub>-<i>x</i>wt% LiF-TiO<sub>2</sub>-CaF<sub>2</sub> (LMN-LTC, <i>x</i> = 4, 6, 8, 10) ceramics was carried out using the solid-state reaction method. The two-phase structure of the LMN-LTC ceramics was shown by XRD investigation, with the main phase being LMN and the second phase Ca(TiO<sub>3</sub>). Due to the influence of additive LTC, the microwave dielectric properties of the LMN ceramics, especially the temperature stability were successfully regulated to near zero. The LMN ceramic with the addition of 6wt% LTC sintered at 1050 °C for 6 h exhibits outstanding microwave dielectric properties: <i>ε</i><sub><i>r</i></sub> = 13.0, <i>Q</i> × <i>f</i> = 42,000 GHz, <i>τ</i><sub><i>f</i></sub> = 1.76 ppm/°C. It is shown that LMN-6wt% LTC ceramic is promising for wireless communication applications.</p></div>","PeriodicalId":625,"journal":{"name":"Journal of Electroceramics","volume":"53 1","pages":"1 - 9"},"PeriodicalIF":1.7,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143919231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study examines how controlled doping of trivalent cations (Cr3+) at manganese (Mn3+) sites influences the structural, microstructural, vibrational, magnetic, and dielectric properties of LuMn1 − xCrxO3 (0 ≤ x ≤ 0.08) compounds. These compounds were synthesized using conventional solid-state reaction techniques. Rietveld-fitted X-ray diffraction reveals hexagonal crystal symmetry (P63cm space group) with reduced lattice parameters and volume due to Cr doping and ionic size mismatch. Room temperature Raman spectra show phonon peak shifts and reduced mode intensity, indicating structural disorder or internal stress in all samples. The magnetization outcomes reveal a weak ferromagnetic property across all samples, which can be enhanced with higher concentrations of Cr ions. The frequency-dependent dielectric properties and loss tangent (tan δ) at 300 K in all examined compounds demonstrate a decrease in dielectric constant and an increase in loss tangent. These changes are attributed to the double exchange interaction between Mn3+-O-Cr3+ cations, supported by the metallic character’s emergence. Our findings on improved magnetization and adjusted dielectric parameters represent progress in understanding multiferroic compounds.
{"title":"Structural, vibrational, magnetic, and dielectric properties of hexagonally ordered Cr-doped LuMn1 − xCrxO3 (0 ≤ x ≤ 0.08) manganite","authors":"Aadish Kumar Jain, Anchit Modi, Pradeep Kumar Sharma, Shubha Dubey, Ashutosh Mishra","doi":"10.1007/s10832-024-00371-z","DOIUrl":"10.1007/s10832-024-00371-z","url":null,"abstract":"<div><p>This study examines how controlled doping of trivalent cations (Cr<sup>3+</sup>) at manganese (Mn<sup>3+</sup>) sites influences the structural, microstructural, vibrational, magnetic, and dielectric properties of LuMn<sub>1 − x</sub>Cr<sub>x</sub>O<sub>3</sub> (0 ≤ x ≤ 0.08) compounds. These compounds were synthesized using conventional solid-state reaction techniques. Rietveld-fitted X-ray diffraction reveals hexagonal crystal symmetry (P<sub>63</sub>cm space group) with reduced lattice parameters and volume due to Cr doping and ionic size mismatch. Room temperature Raman spectra show phonon peak shifts and reduced mode intensity, indicating structural disorder or internal stress in all samples. The magnetization outcomes reveal a weak ferromagnetic property across all samples, which can be enhanced with higher concentrations of Cr ions. The frequency-dependent dielectric properties and loss tangent (tan δ) at 300 K in all examined compounds demonstrate a decrease in dielectric constant and an increase in loss tangent. These changes are attributed to the double exchange interaction between Mn<sup>3+</sup>-O-Cr<sup>3+</sup> cations, supported by the metallic character’s emergence. Our findings on improved magnetization and adjusted dielectric parameters represent progress in understanding multiferroic compounds.</p></div>","PeriodicalId":625,"journal":{"name":"Journal of Electroceramics","volume":"53 1","pages":"10 - 17"},"PeriodicalIF":1.7,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143919232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-08DOI: 10.1007/s10832-024-00370-0
Rajesh K. Mishra, E. B. Araújo, Rohit R. Shahi
Entropy-stabilized ceramics have attracted researchers significantly due to their potential vast multi-functional applications in various engineering fields. The present study emphasizes the synthesis, sintering temperature, Raman, and electrical behavior of a spinel (CoAlFeNTi)3O4 high entropy oxide (HEO). The HEO is synthesized through the modified solid-state reaction method at two different sintering temperatures (1100 °C and 1250 °C) and characterized further with the XRD, Raman, and SEM for structural and microstructural behavior. XRD analysis confirmed the formation of a single cubic spinel phase with the Fd-3 m space group. In addition, Raman analysis also confirmed that the synthesized HEOs have a spinel structure with an inverse spinel nature. With the enhancement of the sintering temperature, XRD analysis indicates that the crystallinity and crystallite size of the HEO enhanced. The current density (J) versus applied electric field (E) characteristics displayed that both 1100 °C and 1250 °C sintered HEOs possessed leakage current density at zero applied electric field and an ohmic conductance of (:4.59times:{10}^{-10}) mhos/cm and (:3.43times:{10}^{-10}) mhos/cm respectively. Moreover, J - E characteristics also showed that the enhancement of sintering temperature enhanced the resistive switching behavior of the different temperature sintered spinel HEOs. This improved resistive switching behavior in the J-E curve indicates that the synthesized spinel HEO can find potential application in resistive switching memory devices.
{"title":"Studies on synthesis, Raman, and electrical properties of novel spinel high entropy ceramics","authors":"Rajesh K. Mishra, E. B. Araújo, Rohit R. Shahi","doi":"10.1007/s10832-024-00370-0","DOIUrl":"10.1007/s10832-024-00370-0","url":null,"abstract":"<div><p>Entropy-stabilized ceramics have attracted researchers significantly due to their potential vast multi-functional applications in various engineering fields. The present study emphasizes the synthesis, sintering temperature, Raman, and electrical behavior of a spinel (CoAlFeNTi)<sub>3</sub>O<sub>4</sub> high entropy oxide (HEO). The HEO is synthesized through the modified solid-state reaction method at two different sintering temperatures (1100 °C and 1250 °C) and characterized further with the XRD, Raman, and SEM for structural and microstructural behavior. XRD analysis confirmed the formation of a single cubic spinel phase with the Fd-3 m space group. In addition, Raman analysis also confirmed that the synthesized HEOs have a spinel structure with an inverse spinel nature. With the enhancement of the sintering temperature, XRD analysis indicates that the crystallinity and crystallite size of the HEO enhanced. The current density (J) versus applied electric field (E) characteristics displayed that both 1100 °C and 1250 °C sintered HEOs possessed leakage current density at zero applied electric field and an ohmic conductance of <span>(:4.59times:{10}^{-10})</span> mhos/cm and <span>(:3.43times:{10}^{-10})</span> mhos/cm respectively. Moreover, J - E characteristics also showed that the enhancement of sintering temperature enhanced the resistive switching behavior of the different temperature sintered spinel HEOs. This improved resistive switching behavior in the J-E curve indicates that the synthesized spinel HEO can find potential application in resistive switching memory devices.</p></div>","PeriodicalId":625,"journal":{"name":"Journal of Electroceramics","volume":"53 1","pages":"18 - 28"},"PeriodicalIF":1.7,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143918921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-05DOI: 10.1007/s10832-024-00367-9
Jiyeon Lee, Hyojung Kim, Muhammad Hilal, Zhicheng Cai
We introduce a high surface area sensor composed of Co3O4 nanoparticles (NPs) embedded within porous ZnO nanofibers (NFs), exhibiting a notable response to acetone. Initially, we synthesized polyvinylpyrrolidone (PVP) NFs containing zinc and cobalt salts via a simple electrospinning method. Subsequently, the calcination of the PVP NFs resulted in the formation of Co3O4 NPs embedded within the porous ZnO NFs. The heterostructure material demonstrated a significant response to 100 ppm acetone detection, with a ratio of electrical resistance in air (Ra) to that in the presence of gas (Rg) reaching 111 at its optimal operating temperature of 275 °C. Furthermore, it exhibited stable performance under high relative humidity conditions.
{"title":"Efficient acetone sensing utilizing Co3O4-Embedded porous ZnO nanofibers","authors":"Jiyeon Lee, Hyojung Kim, Muhammad Hilal, Zhicheng Cai","doi":"10.1007/s10832-024-00367-9","DOIUrl":"10.1007/s10832-024-00367-9","url":null,"abstract":"<div><p>We introduce a high surface area sensor composed of Co<sub>3</sub>O<sub>4</sub> nanoparticles (NPs) embedded within porous ZnO nanofibers (NFs), exhibiting a notable response to acetone. Initially, we synthesized polyvinylpyrrolidone (PVP) NFs containing zinc and cobalt salts via a simple electrospinning method. Subsequently, the calcination of the PVP NFs resulted in the formation of Co<sub>3</sub>O<sub>4</sub> NPs embedded within the porous ZnO NFs. The heterostructure material demonstrated a significant response to 100 ppm acetone detection, with a ratio of electrical resistance in air (R<sub>a</sub>) to that in the presence of gas (R<sub>g</sub>) reaching 111 at its optimal operating temperature of 275 °C. Furthermore, it exhibited stable performance under high relative humidity conditions.</p></div>","PeriodicalId":625,"journal":{"name":"Journal of Electroceramics","volume":"52 4","pages":"283 - 296"},"PeriodicalIF":1.7,"publicationDate":"2024-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-05DOI: 10.1007/s10832-024-00372-y
Jasdeep Singh, Shalini Bahel
This study investigates the microwave dielectric and shielding properties of MgTiO3-based solid solutions across the K (18–26.5 GHz) and Ka (26.5–40 GHz) frequency bands. Synthesized via a conventional solid-state mixed oxide route using MgO and Mg(OH)2 as raw materials, the dielectric properties of MgTiO3 and Mg(Ti0.95Sn0.05)O3 solid solutions varied with composition and raw material. Results showed that MgO-based materials exhibited higher relative permittivity (ɛr) and loss tangent (tan δ) compared to Mg(OH)2-based materials. Furthermore, the ɛr of the prepared samples decreased with Sn4+ substitution, attributed to the lower dielectric polarizability of Sn4+ cations compared to Ti4+ cations. Results also indicated a decrease in tan δ with Sn4+ substitution, resulting from a reduction in octahedral tilting upon partial replacement of Ti4+ cations with Sn4+ cations in MgTiO3. Shielding property characterization revealed that all samples exhibited frequency-selective and tunable shielding capabilities, with tuning achievable through variations in composition or shield thickness. Notably, in the K frequency band, MgO-based MgTiO3 exhibited superior dielectric properties, with a sample thickness of 2.9 mm achieving a shielding effectiveness (SE) of up to 35.62 dB at 22.30 GHz, effectively suppressing over 99.97% of incoming radiation. Similarly, in the Ka frequency band, MgO-based Mg(Ti0.95Sn0.05)O3 demonstrated remarkable SE, with a sample thickness of 1.8 mm reaching SE of 38.62 dB at 31.60 GHz, attenuating over 99.98% of incoming radiation. These findings suggest potential for frequency-selective and adjustable EMI shielding in next-gen technologies.
{"title":"MgTiO3-based ceramics for enhanced EMI shielding solutions in K and Ka frequency bands","authors":"Jasdeep Singh, Shalini Bahel","doi":"10.1007/s10832-024-00372-y","DOIUrl":"10.1007/s10832-024-00372-y","url":null,"abstract":"<div><p>This study investigates the microwave dielectric and shielding properties of MgTiO<sub>3</sub>-based solid solutions across the <i>K</i> (18–26.5 GHz) and <i>Ka</i> (26.5–40 GHz) frequency bands. Synthesized via a conventional solid-state mixed oxide route using MgO and Mg(OH)<sub>2</sub> as raw materials, the dielectric properties of MgTiO<sub>3</sub> and Mg(Ti<sub>0.95</sub>Sn<sub>0.05</sub>)O<sub>3</sub> solid solutions varied with composition and raw material. Results showed that MgO-based materials exhibited higher relative permittivity (<i>ɛ</i><sub><i>r</i></sub>) and loss tangent (<i>tan δ</i>) compared to Mg(OH)<sub>2</sub>-based materials. Furthermore, the <i>ɛ</i><sub><i>r</i></sub> of the prepared samples decreased with Sn<sup>4+</sup> substitution, attributed to the lower dielectric polarizability of Sn<sup>4+</sup> cations compared to Ti<sup>4+</sup> cations. Results also indicated a decrease in <i>tan δ</i> with Sn<sup>4+</sup> substitution, resulting from a reduction in octahedral tilting upon partial replacement of Ti<sup>4+</sup> cations with Sn<sup>4+</sup> cations in MgTiO<sub>3</sub>. Shielding property characterization revealed that all samples exhibited frequency-selective and tunable shielding capabilities, with tuning achievable through variations in composition or shield thickness. Notably, in the <i>K</i> frequency band, MgO-based MgTiO<sub>3</sub> exhibited superior dielectric properties, with a sample thickness of 2.9 mm achieving a shielding effectiveness (SE) of up to 35.62 dB at 22.30 GHz, effectively suppressing over 99.97% of incoming radiation. Similarly, in the Ka frequency band, MgO-based Mg(Ti<sub>0.95</sub>Sn<sub>0.05</sub>)O<sub>3</sub> demonstrated remarkable SE, with a sample thickness of 1.8 mm reaching SE of 38.62 dB at 31.60 GHz, attenuating over 99.98% of incoming radiation. These findings suggest potential for frequency-selective and adjustable EMI shielding in next-gen technologies.</p></div>","PeriodicalId":625,"journal":{"name":"Journal of Electroceramics","volume":"52 4","pages":"338 - 357"},"PeriodicalIF":1.7,"publicationDate":"2024-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Raw materials were etched by nitric acid to release utterly carbon dioxide. An excess of citric acid was then employed as fuel to prime the combustion reaction for the synthesis of Sr0.95Ba0.05Bi2−xSmxNb2O9 (x = 0 (SrBi2Nb2O9), 0.1, and 0.2) compounds. X-ray diffraction, Fourier-transformed infrared, and Raman techniques revealed quite certain that there is a link between dopant amounts and structural changes. One is that the cell volume was smoothly reduced. Second, the bond force constant decreased slightly when the dopant was introduced into the lattice. Even though the SrBi2Nb2O9 compound is not only doped by samarium but also by barium, samarium is the only dopant that affects dielectric and electrical properties. Doping with samarium enhances the dielectric constant at room temperature by reducing the Curie temperature, and it turns ferroelectric normal into relaxor behavior. The results of AC conductivity and electrical modulus laid out that one extreme defect was that a significant amount of cation exchange occurs in Sr0.95Ba0.05Bi2−xSmxNb2O9 samples and a large amount of oxygen vacancies were released. Overlapping large polaron tunneling model (OLPT) mechanisms was the adequate model for these compounds.
{"title":"Structural, dielectric, and electrical studies of Sm-doped Sr0.95Ba0.05Bi2Nb2O9 lead-free relaxor ceramics","authors":"Mohamed Afqir, Didier Fasquelle, Amina Tachafine, Yingzhi Meng, Mohamed Elaatmani, Abdelhamid Oufakir, Mohamed Daoud","doi":"10.1007/s10832-024-00361-1","DOIUrl":"10.1007/s10832-024-00361-1","url":null,"abstract":"<div><p>Raw materials were etched by nitric acid to release utterly carbon dioxide. An excess of citric acid was then employed as fuel to prime the combustion reaction for the synthesis of Sr<sub>0.95</sub>Ba<sub>0.05</sub>Bi<sub>2−x</sub>Sm<sub>x</sub>Nb<sub>2</sub>O<sub>9</sub> (x = 0 (SrBi<sub>2</sub>Nb<sub>2</sub>O<sub>9</sub>), 0.1, and 0.2) compounds. X-ray diffraction, Fourier-transformed infrared, and Raman techniques revealed quite certain that there is a link between dopant amounts and structural changes. One is that the cell volume was smoothly reduced. Second, the bond force constant decreased slightly when the dopant was introduced into the lattice. Even though the SrBi<sub>2</sub>Nb<sub>2</sub>O<sub>9</sub> compound is not only doped by samarium but also by barium, samarium is the only dopant that affects dielectric and electrical properties. Doping with samarium enhances the dielectric constant at room temperature by reducing the Curie temperature, and it turns ferroelectric normal into relaxor behavior. The results of AC conductivity and electrical modulus laid out that one extreme defect was that a significant amount of cation exchange occurs in Sr<sub>0.95</sub>Ba<sub>0.05</sub>Bi<sub>2−x</sub>Sm<sub>x</sub>Nb<sub>2</sub>O<sub>9</sub> samples and a large amount of oxygen vacancies were released. Overlapping large polaron tunneling model (OLPT) mechanisms was the adequate model for these compounds.</p></div>","PeriodicalId":625,"journal":{"name":"Journal of Electroceramics","volume":"52 4","pages":"326 - 337"},"PeriodicalIF":1.7,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-01DOI: 10.1007/s10832-024-00363-z
Anil Prasad, Linu Malakkal, Lukas Bichler, Jerzy Szpunar
Cerium dioxide (CeO2) finds extensive utility in electro ceramics applications, including solid oxide fuel cells, oxygen sensors, and catalysts. However, Spark Plasma Sintering (SPS) of CeO2 presents challenges due to the increased mobility of O2− ions in the presence of an electric field, as well as its reactivity with graphite tooling. Traditionally, CeO2 is sintered in an oxidative environment to prevent it from reducing to CeO2−δ or Ce2O3. Nevertheless, oxidative atmospheres are detrimental to the graphite and steel tooling used in SPS processing. In this study, we investigated CeO2 SPS in a CO2 atmosphere and observed slight increase in the relative density (RD) of the as-sintered samples in comparison to those sintered in an Ar atmosphere. The improved densification is attributed to reduced formation of oxygen vacancies in the CO2 atmosphere. Furthermore, the reaction between CeO2 and graphite generates COx gases, and that reaction can be reversed in a CO2 atmosphere. In summary, CeO2 SPS in a CO2 environment demonstrates superior densification, effectively mitigating the challenges associated with ionic mobility and graphite reactivity.
{"title":"Spark plasma sintering of cerium (IV) oxide under a carbon dioxide atmosphere","authors":"Anil Prasad, Linu Malakkal, Lukas Bichler, Jerzy Szpunar","doi":"10.1007/s10832-024-00363-z","DOIUrl":"10.1007/s10832-024-00363-z","url":null,"abstract":"<div><p>Cerium dioxide (CeO<sub>2</sub>) finds extensive utility in electro ceramics applications, including solid oxide fuel cells, oxygen sensors, and catalysts. However, Spark Plasma Sintering (SPS) of CeO<sub>2</sub> presents challenges due to the increased mobility of O<sup>2−</sup> ions in the presence of an electric field, as well as its reactivity with graphite tooling. Traditionally, CeO<sub>2</sub> is sintered in an oxidative environment to prevent it from reducing to CeO<sub>2−δ</sub> or Ce<sub>2</sub>O<sub>3</sub>. Nevertheless, oxidative atmospheres are detrimental to the graphite and steel tooling used in SPS processing. In this study, we investigated CeO<sub>2</sub> SPS in a CO<sub>2</sub> atmosphere and observed slight increase in the relative density (RD) of the as-sintered samples in comparison to those sintered in an Ar atmosphere. The improved densification is attributed to reduced formation of oxygen vacancies in the CO<sub>2</sub> atmosphere. Furthermore, the reaction between CeO<sub>2</sub> and graphite generates CO<sub>x</sub> gases, and that reaction can be reversed in a CO<sub>2</sub> atmosphere. In summary, CeO<sub>2</sub> SPS in a CO<sub>2</sub> environment demonstrates superior densification, effectively mitigating the challenges associated with ionic mobility and graphite reactivity.</p></div>","PeriodicalId":625,"journal":{"name":"Journal of Electroceramics","volume":"52 4","pages":"273 - 282"},"PeriodicalIF":1.7,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}