Pub Date : 2013-06-16DOI: 10.1109/PLASMA.2013.6633327
S. Plimpton, M. Gołkowski, Chad M. Austin, M. Voskuil, Deborah G. Mitchell, S. Eaton, G. Eaton, C. Golkowski
Summary form only given. Interest in the use of non-thermal plasmas in the biomedical setting is rapidly growing. Potential applications of such devices range from instrument sterilization to clinical therapy. One of the largest hurdles to the implementation of nonthermal plasmas, specifically in regard to patient exposure, is the relatively poor understanding of the chemical processes taking place. Recent research has focused intensely on the dynamic chemical cocktail associated with specific discharge configurations. Our group recently detailed the ability to control chemical species created by our device through modifying operating parameters, namely humidity1. Specifically, we demonstrated our device's capability to deliver the short-lived hydroxyl radical to treatment sites at a distance of over a meter from the plasma discharge. This recent development of our remote design allows for potential user-defined specificity in both concentration and flavor of chemical exposure to the treatment environment. Introduction of non-thermal plasma devices to the clinical setting, specifically in the United States, will inevitably require a certain degree of therapeutic control. We report on the in vitro “plasma dosimetry” related to the application of our device. Control of the device effluent's chemical makeup allows for parameterization of treatment-related variables like the ratio of inactivation or DNA oxidation between prokaryotic and eukaryotic species. Building on previous work using electron spin resonance spectroscopy to enumerate free radicals delivered to our treatment site, we demonstrate the potential for a therapeutic window of operation. Such regulation provides the potential to tune non-thermal plasma based devices with regard to the contamination or infection being treated.
{"title":"Chemical dosimetry of an indirect exposure non-thermal plasma device","authors":"S. Plimpton, M. Gołkowski, Chad M. Austin, M. Voskuil, Deborah G. Mitchell, S. Eaton, G. Eaton, C. Golkowski","doi":"10.1109/PLASMA.2013.6633327","DOIUrl":"https://doi.org/10.1109/PLASMA.2013.6633327","url":null,"abstract":"Summary form only given. Interest in the use of non-thermal plasmas in the biomedical setting is rapidly growing. Potential applications of such devices range from instrument sterilization to clinical therapy. One of the largest hurdles to the implementation of nonthermal plasmas, specifically in regard to patient exposure, is the relatively poor understanding of the chemical processes taking place. Recent research has focused intensely on the dynamic chemical cocktail associated with specific discharge configurations. Our group recently detailed the ability to control chemical species created by our device through modifying operating parameters, namely humidity1. Specifically, we demonstrated our device's capability to deliver the short-lived hydroxyl radical to treatment sites at a distance of over a meter from the plasma discharge. This recent development of our remote design allows for potential user-defined specificity in both concentration and flavor of chemical exposure to the treatment environment. Introduction of non-thermal plasma devices to the clinical setting, specifically in the United States, will inevitably require a certain degree of therapeutic control. We report on the in vitro “plasma dosimetry” related to the application of our device. Control of the device effluent's chemical makeup allows for parameterization of treatment-related variables like the ratio of inactivation or DNA oxidation between prokaryotic and eukaryotic species. Building on previous work using electron spin resonance spectroscopy to enumerate free radicals delivered to our treatment site, we demonstrate the potential for a therapeutic window of operation. Such regulation provides the potential to tune non-thermal plasma based devices with regard to the contamination or infection being treated.","PeriodicalId":6313,"journal":{"name":"2013 Abstracts IEEE International Conference on Plasma Science (ICOPS)","volume":"14 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79646658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PLASMA.2013.6633511
J. Scharer, X. Xiang, B. Kupczyk, J. Booske
Observations of rapidly formed (<;50-400 ns) distributed plasma discharges using X-band microwaves in Neon with 1 mTorr residual air are presented. A stainless steel cylindrical discharge test chamber is used to observe microwave breakdown at 10 to 760 torr pressures. The chamber is enclosed with polycarbonate windows on both ends and has two side ports. The magnetron illuminates the chamber using 25 kW, 9.382 GHz and 0.8 μs pulse-width power through an X-band waveguide pressed against the polycarbonate window. Microwave diodes are used to measure incident, reflected, and transmitted microwave power to a moveable monopole antenna located beyond the discharge chamber. They provide information to determine the discharge reflection and attenuation characteristics as the pressure is varied. Observations of localized transmission power reduction measurements of -20 dB that occur within 50-400 ns caused by the plasma under different conditions have been made. Optical emission spectra experiments allow one to determine the gas temperature of the plasma at different pressures. Microwave mixers are used to compare both the amplitude and phase of the reflected signals in phase and in quadrature (90 degrees) relative to a fixed phase reference signal. Together with a six region 1-D plasma modeling code, the effective plasma density, collision frequency and electron temperature are estimated. An ICCD provides fast (<;50 ns) time-scale optical images to estimate the plasma size, also revealing the plasma formation and decay processes.
{"title":"Rapid X-band microwave breakdown in Ne","authors":"J. Scharer, X. Xiang, B. Kupczyk, J. Booske","doi":"10.1109/PLASMA.2013.6633511","DOIUrl":"https://doi.org/10.1109/PLASMA.2013.6633511","url":null,"abstract":"Observations of rapidly formed (<;50-400 ns) distributed plasma discharges using X-band microwaves in Neon with 1 mTorr residual air are presented. A stainless steel cylindrical discharge test chamber is used to observe microwave breakdown at 10 to 760 torr pressures. The chamber is enclosed with polycarbonate windows on both ends and has two side ports. The magnetron illuminates the chamber using 25 kW, 9.382 GHz and 0.8 μs pulse-width power through an X-band waveguide pressed against the polycarbonate window. Microwave diodes are used to measure incident, reflected, and transmitted microwave power to a moveable monopole antenna located beyond the discharge chamber. They provide information to determine the discharge reflection and attenuation characteristics as the pressure is varied. Observations of localized transmission power reduction measurements of -20 dB that occur within 50-400 ns caused by the plasma under different conditions have been made. Optical emission spectra experiments allow one to determine the gas temperature of the plasma at different pressures. Microwave mixers are used to compare both the amplitude and phase of the reflected signals in phase and in quadrature (90 degrees) relative to a fixed phase reference signal. Together with a six region 1-D plasma modeling code, the effective plasma density, collision frequency and electron temperature are estimated. An ICCD provides fast (<;50 ns) time-scale optical images to estimate the plasma size, also revealing the plasma formation and decay processes.","PeriodicalId":6313,"journal":{"name":"2013 Abstracts IEEE International Conference on Plasma Science (ICOPS)","volume":"17 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85390637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PLASMA.2013.6633189
R. Brandenburg, H. Hoft, T. Hoder, A. Pipa, R. Basner, M. Schmidt, M. Kettlitz
Summary form only given. The application of atmospheric pressure discharges in new fields like environmental protection, surface treatment or life-sciences requires a profound knowledge on the plasma parameters and properties. This includes (1) the characterization of the breakdown processes triggering plasma chemistry, (2) the proper determination of the electrical parameters and (3) the description of the dominant chemical pathways. The contribution aims to present new approaches regarding these three topics for pulsed driven Dielectric Barrier Discharges in particular. It will be shown by fast electrical, optical and spectroscopic methods that the ignition, breakdown statistics and spatio-temporally resolved development of pulsed DBD microdischarges is controlled by the properties of the power supply (duty cycle, frequency, amplitude varied) as well as the composition of the gas1. In particular the starting point of the microdischarge ignition can be changed which is a new effect in DBDs caused by electric field rearrangement in the gap due to positive ion development. Surface processes at the dielectric barriers influencing this behavior will be discussed, too. The determination of electrical parameters such as discharge current, gas gap voltage, instantaneous power and energy as well as the charge transferred through the gas gap based on a simple equivalent circuit will be presented. The proposed approach accurately accounts the displacement current and key capacitance values, which inexactly determination are a source of experimental errors in particular in case of pulsed driven DBDs. The presented approach is consistent with sinusoidal-voltage driven or miniature pulsed driven DBDs. We believe that these new insights on electrical characterization are an important input for those who are working with DBDs, since the electrical parameters are mandatory information. The characterization of the dominant chemical pathways of advanced plasma processes is usually focused on the volume processes only. This contribution will discuss several examples which shall emphasize, that secondary effects must be considered, too. These shall cover the topics of adsorption-enhanced VOC conversion by DBD plasma treatment, NOx conversion and indirect plasma treatment of liquids for antimicrobial and chemical decontamination.
{"title":"PPPS-2013: This is a sample abstract submission dielectric barrier discharges: Pulsed breakdown, electrical characterization and Chemistry","authors":"R. Brandenburg, H. Hoft, T. Hoder, A. Pipa, R. Basner, M. Schmidt, M. Kettlitz","doi":"10.1109/PLASMA.2013.6633189","DOIUrl":"https://doi.org/10.1109/PLASMA.2013.6633189","url":null,"abstract":"Summary form only given. The application of atmospheric pressure discharges in new fields like environmental protection, surface treatment or life-sciences requires a profound knowledge on the plasma parameters and properties. This includes (1) the characterization of the breakdown processes triggering plasma chemistry, (2) the proper determination of the electrical parameters and (3) the description of the dominant chemical pathways. The contribution aims to present new approaches regarding these three topics for pulsed driven Dielectric Barrier Discharges in particular. It will be shown by fast electrical, optical and spectroscopic methods that the ignition, breakdown statistics and spatio-temporally resolved development of pulsed DBD microdischarges is controlled by the properties of the power supply (duty cycle, frequency, amplitude varied) as well as the composition of the gas1. In particular the starting point of the microdischarge ignition can be changed which is a new effect in DBDs caused by electric field rearrangement in the gap due to positive ion development. Surface processes at the dielectric barriers influencing this behavior will be discussed, too. The determination of electrical parameters such as discharge current, gas gap voltage, instantaneous power and energy as well as the charge transferred through the gas gap based on a simple equivalent circuit will be presented. The proposed approach accurately accounts the displacement current and key capacitance values, which inexactly determination are a source of experimental errors in particular in case of pulsed driven DBDs. The presented approach is consistent with sinusoidal-voltage driven or miniature pulsed driven DBDs. We believe that these new insights on electrical characterization are an important input for those who are working with DBDs, since the electrical parameters are mandatory information. The characterization of the dominant chemical pathways of advanced plasma processes is usually focused on the volume processes only. This contribution will discuss several examples which shall emphasize, that secondary effects must be considered, too. These shall cover the topics of adsorption-enhanced VOC conversion by DBD plasma treatment, NOx conversion and indirect plasma treatment of liquids for antimicrobial and chemical decontamination.","PeriodicalId":6313,"journal":{"name":"2013 Abstracts IEEE International Conference on Plasma Science (ICOPS)","volume":"108 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81706583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PLASMA.2013.6635139
Nobuyuki Anzai, Fumitaka Tachinami, D. Takewaki, T. Sasaki, T. Kikuchi, T. Aso, N. Harada
Summary form only given. For observing interior of dense plasmas, intense, point-spot X-ray source is generated by X-pinch technique1. Required parameter of the pulse generator is the rate of current rise 1012 A/s, i.e. 100 kA of current and 100 ns of current rising time2.To generate X-ray source by using X-pinch system, PFN module3 was used, having the advantages of holding high peak current, simple fabrication, and so on. The circuit topology of the PFN module through circuit simulations has been optimized, and three-stage LC-ladder of PFN is suitable for the table-top power supply for X-pinch. The inductance component included in the generator is strongly affected to the rate of current rise. In order to reduce the inductance of the X-pinch system, we evaluate the inductance and the rate of rise, experimentally. The PFN modules were coaxially arranged in octagon plates, and 48 PFN modules can be connected to drive the X-pinch. The PFN module consists of a three-stage LC-ladder circuit, which 73 nH of the inductance and 2700 pF of the capacitance. The discharge device has a coaxial configuration to reduce the inductance. The load current flowing through the inductance measured using a Rogowski coil, contained in the device was determined by comparison between the calculated results with Alternative Transients Program-Electromagnetic Transients Program (ATP-EMTP)4. The rate of current rise obtained was 1.7 x 1011 A/s. From these experiments, the electrode inductance of 65 nH was estimated from the results calculated by the ATP-EMTP. The charging voltage to achieve the target rate of current rise is evaluated to be about 60 - 80 kV.
{"title":"Study on pulse power supply by using pulse forming network modules toward intense X-ray source","authors":"Nobuyuki Anzai, Fumitaka Tachinami, D. Takewaki, T. Sasaki, T. Kikuchi, T. Aso, N. Harada","doi":"10.1109/PLASMA.2013.6635139","DOIUrl":"https://doi.org/10.1109/PLASMA.2013.6635139","url":null,"abstract":"Summary form only given. For observing interior of dense plasmas, intense, point-spot X-ray source is generated by X-pinch technique1. Required parameter of the pulse generator is the rate of current rise 1012 A/s, i.e. 100 kA of current and 100 ns of current rising time2.To generate X-ray source by using X-pinch system, PFN module3 was used, having the advantages of holding high peak current, simple fabrication, and so on. The circuit topology of the PFN module through circuit simulations has been optimized, and three-stage LC-ladder of PFN is suitable for the table-top power supply for X-pinch. The inductance component included in the generator is strongly affected to the rate of current rise. In order to reduce the inductance of the X-pinch system, we evaluate the inductance and the rate of rise, experimentally. The PFN modules were coaxially arranged in octagon plates, and 48 PFN modules can be connected to drive the X-pinch. The PFN module consists of a three-stage LC-ladder circuit, which 73 nH of the inductance and 2700 pF of the capacitance. The discharge device has a coaxial configuration to reduce the inductance. The load current flowing through the inductance measured using a Rogowski coil, contained in the device was determined by comparison between the calculated results with Alternative Transients Program-Electromagnetic Transients Program (ATP-EMTP)4. The rate of current rise obtained was 1.7 x 1011 A/s. From these experiments, the electrode inductance of 65 nH was estimated from the results calculated by the ATP-EMTP. The charging voltage to achieve the target rate of current rise is evaluated to be about 60 - 80 kV.","PeriodicalId":6313,"journal":{"name":"2013 Abstracts IEEE International Conference on Plasma Science (ICOPS)","volume":"21 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82273385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PLASMA.2013.6635138
I. N. Tilikin, A. S. Dimitriev, A. R. Mingaleev, S. N. Mishin, V. Romanova, A. E. Ter-Oganesyan, T. Shelkovenko, S. Pikuz, C. Hoyt, P. Gourdain, A. Cahill, J. Greenly, D. Hammer
Summary form only given. The initial stage a hybrid X pinch (HXP) plasma formation has been studied using laser probing x-ray radiography and electrical measurements. This stage is especially interesting in HXPs in comparison with standard X-pinches because of the strong influence of the electrode plasmas on the process of neck development. Electrode material evaporated by strong UV radiation from the exploding wire can shorten the electrode gap before hot spot formation. The interaction of electrodes plasmas and the exploding wire plasma determines the discharge parameters required for proper HXP operation. The experiments in this work were performed on different pulsers with output current from 4 kA to 1.2 MA and current rise time from 50 ns to 340 ns. The low inductance super small pulse generator Micro based on ceramic capacitors and a flashover vacuum optically triggered switch was specially designed to study the initial phase of the HXP. This pulser with a peak current of 5 kA and current rise rate 100 A/ns reproduced very well the processes in HXPs on more powerful devices in first tenths nanoseconds of the discharge and enables us to study the details of plasma formation without powering big machines. The results obtained on the Micro pulser were compared with the results obtained in experiments on our older pulsers GVP (10 kA, 350 ns) and BIN (250 kA, 100 ns) at the Lebedev Institute, and XP (400 kA, 100 ns) and COBRA (1 MA, 100 ns) at Cornell University. It was shown that in HXPs from materials with low melting temperature and high core expansion rate (Al, Cu, Ag, Au) the wire core expands and fills inter-electrode gap and prevents fast diode shortening by the electrode plasma. That makes possible using relatively long pulse drivers for HXP.
只提供摘要形式。利用激光探测X射线摄影和电测量技术研究了混合X捏缩(HXP)等离子体形成的初始阶段。由于电极等离子体对颈部发育过程的强烈影响，与标准x -夹钳相比，hxp的这一阶段特别有趣。由爆炸导线产生的强紫外辐射蒸发的电极材料可以在热点形成之前缩短电极间隙。电极等离子体和爆炸导线等离子体的相互作用决定了适当的HXP操作所需的放电参数。实验在不同的脉冲上进行，输出电流从4 kA到1.2 MA，电流上升时间从50 ns到340 ns。基于陶瓷电容器和闪络真空光触发开关的低电感超小型脉冲发生器Micro，专门用于研究HXP的初始相位。该脉冲发生器的峰值电流为5 kA，电流上升速率为100 a /ns，在放电的前十分之一纳秒内就能在更强大的设备上很好地再现hxp中的过程，使我们能够在不为大型机器供电的情况下研究等离子体形成的细节。并与列别捷夫研究所的GVP (10 kA, 350 ns)和BIN (250 kA, 100 ns)以及康奈尔大学的XP (400 kA, 100 ns)和COBRA (1 MA, 100 ns)上的实验结果进行了比较。结果表明，在熔点低、芯膨胀率高的材料(Al、Cu、Ag、Au)中，芯膨胀填充电极间隙，阻止了电极等离子体对二极管的快速缩短。这使得在HXP中使用相对较长的脉冲驱动成为可能。
{"title":"Investigation of initial stage of hybrid X pinches","authors":"I. N. Tilikin, A. S. Dimitriev, A. R. Mingaleev, S. N. Mishin, V. Romanova, A. E. Ter-Oganesyan, T. Shelkovenko, S. Pikuz, C. Hoyt, P. Gourdain, A. Cahill, J. Greenly, D. Hammer","doi":"10.1109/PLASMA.2013.6635138","DOIUrl":"https://doi.org/10.1109/PLASMA.2013.6635138","url":null,"abstract":"Summary form only given. The initial stage a hybrid X pinch (HXP) plasma formation has been studied using laser probing x-ray radiography and electrical measurements. This stage is especially interesting in HXPs in comparison with standard X-pinches because of the strong influence of the electrode plasmas on the process of neck development. Electrode material evaporated by strong UV radiation from the exploding wire can shorten the electrode gap before hot spot formation. The interaction of electrodes plasmas and the exploding wire plasma determines the discharge parameters required for proper HXP operation. The experiments in this work were performed on different pulsers with output current from 4 kA to 1.2 MA and current rise time from 50 ns to 340 ns. The low inductance super small pulse generator Micro based on ceramic capacitors and a flashover vacuum optically triggered switch was specially designed to study the initial phase of the HXP. This pulser with a peak current of 5 kA and current rise rate 100 A/ns reproduced very well the processes in HXPs on more powerful devices in first tenths nanoseconds of the discharge and enables us to study the details of plasma formation without powering big machines. The results obtained on the Micro pulser were compared with the results obtained in experiments on our older pulsers GVP (10 kA, 350 ns) and BIN (250 kA, 100 ns) at the Lebedev Institute, and XP (400 kA, 100 ns) and COBRA (1 MA, 100 ns) at Cornell University. It was shown that in HXPs from materials with low melting temperature and high core expansion rate (Al, Cu, Ag, Au) the wire core expands and fills inter-electrode gap and prevents fast diode shortening by the electrode plasma. That makes possible using relatively long pulse drivers for HXP.","PeriodicalId":6313,"journal":{"name":"2013 Abstracts IEEE International Conference on Plasma Science (ICOPS)","volume":"39 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82590107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PLASMA.2013.6634962
D. Eremin, S. Bienholz, D. Szeremley, T. Hemke, P. Awakowicz, R. Brinkmann, T. Mussenbrock
Summary form only given. A novel concept of a sputtering source based on a CCP multifrequency large-sized discharge is currently under experimental investigation [1]. The physics of such a discharge is quite complex and includes phenomena taking place on several time and spatial scales. In particular, because of the size and the high frequency harmonics in the driving voltage of such a discharge, the electromagnetic effects may play a significant role. Moreover, use of the electrical asymmetry effect (EAE) to create a self-consistent bias complicates the problem even more. In the present work we report results of our studying such a discharge with a recently developed self-consistent kinetic 2d3c PIC/MCC GPU-parallelized code which uses Darwin approximation [2] for description of the electromagnetic field components. The simulations are made in a geometry close to that of the sputtering source used in the experiments. We discuss interesting features of the discharges arising in the main and the side chambers and compare the simulation results and the experimental data.
{"title":"Kinetic simulations of a large-sized multifrequency CCP-based sputtering source with a PIC/MCC darwin code","authors":"D. Eremin, S. Bienholz, D. Szeremley, T. Hemke, P. Awakowicz, R. Brinkmann, T. Mussenbrock","doi":"10.1109/PLASMA.2013.6634962","DOIUrl":"https://doi.org/10.1109/PLASMA.2013.6634962","url":null,"abstract":"Summary form only given. A novel concept of a sputtering source based on a CCP multifrequency large-sized discharge is currently under experimental investigation [1]. The physics of such a discharge is quite complex and includes phenomena taking place on several time and spatial scales. In particular, because of the size and the high frequency harmonics in the driving voltage of such a discharge, the electromagnetic effects may play a significant role. Moreover, use of the electrical asymmetry effect (EAE) to create a self-consistent bias complicates the problem even more. In the present work we report results of our studying such a discharge with a recently developed self-consistent kinetic 2d3c PIC/MCC GPU-parallelized code which uses Darwin approximation [2] for description of the electromagnetic field components. The simulations are made in a geometry close to that of the sputtering source used in the experiments. We discuss interesting features of the discharges arising in the main and the side chambers and compare the simulation results and the experimental data.","PeriodicalId":6313,"journal":{"name":"2013 Abstracts IEEE International Conference on Plasma Science (ICOPS)","volume":"56 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83974264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PPC.2013.6627710
J. Jelonnek, G. Gantenbein, K. Hesch, J. Jin, I. Pagonakis, B. Piosczyk, T. Rzesnicki, M. Thumm, S. Alberti, J. Hogge, M. Tran, V. Erckmann, H. Laqua, G. Michel, P. Bénin, F. Legrand, Y. Rozier, K. Avramidis, J. Vomvoridis, Z. Ioannidis, G. Latsas, I. Tigelis, F. Albajar, T. Bonicelli, F. Cismondi
Summary form only given. Europe is spending joint efforts to develop and to manufacture MW-level gyrotrons for electron cyclotron heating and current drive (ECRH&ECCD) of future plasma experiments. The two most important are the stellarator Wendelstein W7-X at Greifswald and the tokamak ITER at Cadarache. The construction of the 140 GHz, 1 MW CW gyrotrons for the 10 MW ECRH system of W7-X is proceeding well. It is expected that the next series tube will have finished final acceptance tests well in spring 2013. According to plan, production of the gyrotrons for W7-X will be finalized by 2014. This report will summarize the actual status. In parallel to the production and testing of the W7-X gyrotrons, the European GYrotron Consortium (EGYC) is presently developing the EU-1 MW, 170 GHz gyrotron for ITER. That design had been initiated in 2007 already, as a risk mitigation measure during the development of the advanced EU ITER-2 MW coaxial-cavity gyrotron. The basic idea of the EU ITER-1 MW design is to benefit from the experiences made during development and series production of the W7-X gyrotrons and of the experiences gained from the 2 MW coaxial-cavity gyrotron design. Preliminary designs of the cavity and the magnetron injection gun have been presented earlier. During 2012, the scientific design of the EU ITER-1 MW gyrotron components has been finalized. In collaboration with the industrial partner Thales Electron Devices, the industrial design of the technological parts of the gyrotron is being completed. A short pulse prototype gyrotron is under development to support the design of the CW prototype tube. The technological path towards the EU ITER-1MW gyrotron and the final design will be presented.
{"title":"From series production of gyrotrons for W7-X towards EU-1 MW gyrotrons for ITER","authors":"J. Jelonnek, G. Gantenbein, K. Hesch, J. Jin, I. Pagonakis, B. Piosczyk, T. Rzesnicki, M. Thumm, S. Alberti, J. Hogge, M. Tran, V. Erckmann, H. Laqua, G. Michel, P. Bénin, F. Legrand, Y. Rozier, K. Avramidis, J. Vomvoridis, Z. Ioannidis, G. Latsas, I. Tigelis, F. Albajar, T. Bonicelli, F. Cismondi","doi":"10.1109/PPC.2013.6627710","DOIUrl":"https://doi.org/10.1109/PPC.2013.6627710","url":null,"abstract":"Summary form only given. Europe is spending joint efforts to develop and to manufacture MW-level gyrotrons for electron cyclotron heating and current drive (ECRH&ECCD) of future plasma experiments. The two most important are the stellarator Wendelstein W7-X at Greifswald and the tokamak ITER at Cadarache. The construction of the 140 GHz, 1 MW CW gyrotrons for the 10 MW ECRH system of W7-X is proceeding well. It is expected that the next series tube will have finished final acceptance tests well in spring 2013. According to plan, production of the gyrotrons for W7-X will be finalized by 2014. This report will summarize the actual status. In parallel to the production and testing of the W7-X gyrotrons, the European GYrotron Consortium (EGYC) is presently developing the EU-1 MW, 170 GHz gyrotron for ITER. That design had been initiated in 2007 already, as a risk mitigation measure during the development of the advanced EU ITER-2 MW coaxial-cavity gyrotron. The basic idea of the EU ITER-1 MW design is to benefit from the experiences made during development and series production of the W7-X gyrotrons and of the experiences gained from the 2 MW coaxial-cavity gyrotron design. Preliminary designs of the cavity and the magnetron injection gun have been presented earlier. During 2012, the scientific design of the EU ITER-1 MW gyrotron components has been finalized. In collaboration with the industrial partner Thales Electron Devices, the industrial design of the technological parts of the gyrotron is being completed. A short pulse prototype gyrotron is under development to support the design of the CW prototype tube. The technological path towards the EU ITER-1MW gyrotron and the final design will be presented.","PeriodicalId":6313,"journal":{"name":"2013 Abstracts IEEE International Conference on Plasma Science (ICOPS)","volume":"51 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80394887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PLASMA.2013.6634842
B. Denis, N. Bibinov, P. Awakowicz, M. Raguse, R. Moeller
Low-pressure plasmas offer a rapid and efficient option for sterilization of pharmaceutical and medical objects. First commercial plasma sterilization reactors are approved by European Medicines Agency (EMA).1 On short time scales UV/VUV radiation was shown to be the main sterilization mechanism. In order to inactive heterogeneous contamination of microorganisms (i.e., multilayer arrangements of vegetative cells and bacterial endospores) sufficient etching is needed for plasma sterilization.
{"title":"Etching of bacterial endospores of Bacillus subtilis in an inductively coupled low-pressure plasma","authors":"B. Denis, N. Bibinov, P. Awakowicz, M. Raguse, R. Moeller","doi":"10.1109/PLASMA.2013.6634842","DOIUrl":"https://doi.org/10.1109/PLASMA.2013.6634842","url":null,"abstract":"Low-pressure plasmas offer a rapid and efficient option for sterilization of pharmaceutical and medical objects. First commercial plasma sterilization reactors are approved by European Medicines Agency (EMA).1 On short time scales UV/VUV radiation was shown to be the main sterilization mechanism. In order to inactive heterogeneous contamination of microorganisms (i.e., multilayer arrangements of vegetative cells and bacterial endospores) sufficient etching is needed for plasma sterilization.","PeriodicalId":6313,"journal":{"name":"2013 Abstracts IEEE International Conference on Plasma Science (ICOPS)","volume":"58 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80446660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PLASMA.2013.6634989
C. Shin, S. Park, J. Eden
Summary form only given. This presentation describes the fabrication and operation of microdischarge devices which can sustain stable air plasma inside the microcavity and efficiently produce desired gas species from a gas flow. A DC-discharge type microcavity device has been fabricated on nanoporous Al2O3 dielectrics, a robust dielectric produced by wet chemical processing.Production of nitric oxide (NO) from air discharge is one of key interests in this presentation with a potential application of biomedical therapeutics. By controlling the microdischarge device characteristics designed to have optimized condition for NO generation, it can produce NO species selectively at voltages, at least a order lower compared to other conventional techniques. Quantitative measurement of gas species out of the air microplasmas will be discussed.
{"title":"Microcavity plasma devices operating in air: Optimization of the device structure for efficient nitric oxide generation","authors":"C. Shin, S. Park, J. Eden","doi":"10.1109/PLASMA.2013.6634989","DOIUrl":"https://doi.org/10.1109/PLASMA.2013.6634989","url":null,"abstract":"Summary form only given. This presentation describes the fabrication and operation of microdischarge devices which can sustain stable air plasma inside the microcavity and efficiently produce desired gas species from a gas flow. A DC-discharge type microcavity device has been fabricated on nanoporous Al2O3 dielectrics, a robust dielectric produced by wet chemical processing.Production of nitric oxide (NO) from air discharge is one of key interests in this presentation with a potential application of biomedical therapeutics. By controlling the microdischarge device characteristics designed to have optimized condition for NO generation, it can produce NO species selectively at voltages, at least a order lower compared to other conventional techniques. Quantitative measurement of gas species out of the air microplasmas will be discussed.","PeriodicalId":6313,"journal":{"name":"2013 Abstracts IEEE International Conference on Plasma Science (ICOPS)","volume":"10 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77758514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PPC.2013.6627403
Lin Cheng, A. Agarwal, C. Capell, M. O'loughlin, E. van Brunt, K. Lam, J. Richmond, A. Burk, J. Palmour, H. O’Brien, A. Ogunniyi, C. Scozzie
The development of high-voltage power devices based on wide bandgap semiconductor such as silicon carbide (SiC) has attracted great attention due to its superior material properties over silicon for high-temperature applications. Among the high-voltage SiC power devices, the 4H-SiC gate turn-off thyristor (GTO) offers excellent current handling, very high voltage blocking, and fast turn-off capabilities. The 4H-SiC GTO also exhibits lower forward voltage drop than the IGBT-based switches, resulting in lower losses during normal operation. It is an ideal switch for pulsed power applications that require high turn-on di/dt. In order to achieve a blocking capability of or greater than 20 kV in SiC, a thick drift epi-layer (> 160 μm) with an improved carrier lifetime (5 ~ 10 μs) is necessary to obtain a full conductivity modulation. In this paper, for the first time to our knowledge, we report our recently developed 1×2 cm2, 20 kV, 4H-SiC p-GTO using a 160 μm, 2×1014/cm3 doped, p-type drift layer. The active conducting area of the device is 0.53 cm2. Due to the limitations of the high-voltage test set-up, the 4H-SiC p-GTO showed an on-wafer gate-to-anode blocking voltage of 19.9 kV at a leakage current of 1 μA, which corresponds to a one-dimensional (1D) maximum electrical field of ~ 1.5 MV/cm at room-temperature. To measure this large area, 4H-SiC, p-GTO at high current levels (> 100 A/cm2), the forward characteristics of the device were evaluated using a Tektronix 371 curve tracer in pulse mode. A differential specific on-resistance of 11 MΩ-cm2 was obtained at a gate current of 0.35 A and a high current of 300 A/cm2 ~ 400 A/cm2. More results and discussion will be presented at the conference.
{"title":"20 kV, 2 cm2, 4H-SiC gate turn-off thyristors for advanced pulsed power applications","authors":"Lin Cheng, A. Agarwal, C. Capell, M. O'loughlin, E. van Brunt, K. Lam, J. Richmond, A. Burk, J. Palmour, H. O’Brien, A. Ogunniyi, C. Scozzie","doi":"10.1109/PPC.2013.6627403","DOIUrl":"https://doi.org/10.1109/PPC.2013.6627403","url":null,"abstract":"The development of high-voltage power devices based on wide bandgap semiconductor such as silicon carbide (SiC) has attracted great attention due to its superior material properties over silicon for high-temperature applications. Among the high-voltage SiC power devices, the 4H-SiC gate turn-off thyristor (GTO) offers excellent current handling, very high voltage blocking, and fast turn-off capabilities. The 4H-SiC GTO also exhibits lower forward voltage drop than the IGBT-based switches, resulting in lower losses during normal operation. It is an ideal switch for pulsed power applications that require high turn-on di/dt. In order to achieve a blocking capability of or greater than 20 kV in SiC, a thick drift epi-layer (> 160 μm) with an improved carrier lifetime (5 ~ 10 μs) is necessary to obtain a full conductivity modulation. In this paper, for the first time to our knowledge, we report our recently developed 1×2 cm2, 20 kV, 4H-SiC p-GTO using a 160 μm, 2×1014/cm3 doped, p-type drift layer. The active conducting area of the device is 0.53 cm2. Due to the limitations of the high-voltage test set-up, the 4H-SiC p-GTO showed an on-wafer gate-to-anode blocking voltage of 19.9 kV at a leakage current of 1 μA, which corresponds to a one-dimensional (1D) maximum electrical field of ~ 1.5 MV/cm at room-temperature. To measure this large area, 4H-SiC, p-GTO at high current levels (> 100 A/cm2), the forward characteristics of the device were evaluated using a Tektronix 371 curve tracer in pulse mode. A differential specific on-resistance of 11 MΩ-cm2 was obtained at a gate current of 0.35 A and a high current of 300 A/cm2 ~ 400 A/cm2. More results and discussion will be presented at the conference.","PeriodicalId":6313,"journal":{"name":"2013 Abstracts IEEE International Conference on Plasma Science (ICOPS)","volume":"56 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81325671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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