Pub Date : 2019-01-01DOI: 10.1016/b978-0-12-813353-8.00045-2
J. Ajayan, S. Chaudhury, Suprem R. Das, Prabhati Dubey, R. D’Esposito, S. Frégonèse, Navdeep Goyal, R. Hegde, R. Jaiswal, Saumyakanti Khatua, R. Kotnala, Yaochuan Mei, Sachin Mishra, Sparsh Mittal, D. Nirmal, Nidhi Pandit, N. Pathak, Shibnath Pathak, Bhargav Raval, B. Sensale‐Rodriguez, Vaishali Shukla, Man Singh, S. K. Sinha, K. Verma, Xinbo Wang, T. Zimmer
{"title":"List of Contributors","authors":"J. Ajayan, S. Chaudhury, Suprem R. Das, Prabhati Dubey, R. D’Esposito, S. Frégonèse, Navdeep Goyal, R. Hegde, R. Jaiswal, Saumyakanti Khatua, R. Kotnala, Yaochuan Mei, Sachin Mishra, Sparsh Mittal, D. Nirmal, Nidhi Pandit, N. Pathak, Shibnath Pathak, Bhargav Raval, B. Sensale‐Rodriguez, Vaishali Shukla, Man Singh, S. K. Sinha, K. Verma, Xinbo Wang, T. Zimmer","doi":"10.1016/b978-0-12-813353-8.00045-2","DOIUrl":"https://doi.org/10.1016/b978-0-12-813353-8.00045-2","url":null,"abstract":"","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90098481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-01-01DOI: 10.1016/B978-0-12-813353-8.00005-1
Suprem R. Das
{"title":"Advances in InSb and InAs Nanowire Based Nanoelectronic Field Effect Transistors","authors":"Suprem R. Das","doi":"10.1016/B978-0-12-813353-8.00005-1","DOIUrl":"https://doi.org/10.1016/B978-0-12-813353-8.00005-1","url":null,"abstract":"","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83234653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-01-01DOI: 10.1016/B978-0-12-813353-8.00011-7
Vaishali Shukla, Bhargav Raval, Sachin Mishra, Man Singh
{"title":"Role of Nanocomposites in Future Nanoelectronic Information Storage Devices","authors":"Vaishali Shukla, Bhargav Raval, Sachin Mishra, Man Singh","doi":"10.1016/B978-0-12-813353-8.00011-7","DOIUrl":"https://doi.org/10.1016/B978-0-12-813353-8.00011-7","url":null,"abstract":"","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80195478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-01-01DOI: 10.1016/B978-0-12-813353-8.00004-X
K. Verma, R. Kotnala, N. Goyal
{"title":"Multi-Functionality of Spintronic Materials","authors":"K. Verma, R. Kotnala, N. Goyal","doi":"10.1016/B978-0-12-813353-8.00004-X","DOIUrl":"https://doi.org/10.1016/B978-0-12-813353-8.00004-X","url":null,"abstract":"","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90259230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-01-30DOI: 10.1515/9783035617795-002
Mervyn Hartwig
{"title":"How to Use the Book","authors":"Mervyn Hartwig","doi":"10.1515/9783035617795-002","DOIUrl":"https://doi.org/10.1515/9783035617795-002","url":null,"abstract":"","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78030009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-13DOI: 10.1109/SNW.2010.5562577
Dejin Gao, Lijie Zhang, Ru Huang, Runsheng Wang, Dongmei Wu, Y. Kuang, Yu Tang, Zhe Yu, Albert Z. Wang, Yangyuan Wang
In summary, a novel RRAM with the structure of Cu/SixOyNz/W was first fabricated and its characteristics are thoroughly investigated. The new device exhibited low switching voltages and low reset currents, demonstrating its potential for low-power applications. Repeatable unipolar resistive switching characteristics in terms of high off/on resistance ratio and good retention capability were observed. The switching mechanism of the device was analyzed and can be explained by the formation and rupture of vacancy-filaments.
{"title":"A novel nitrogen-doped SiOx resistive switching memory with low switching voltages","authors":"Dejin Gao, Lijie Zhang, Ru Huang, Runsheng Wang, Dongmei Wu, Y. Kuang, Yu Tang, Zhe Yu, Albert Z. Wang, Yangyuan Wang","doi":"10.1109/SNW.2010.5562577","DOIUrl":"https://doi.org/10.1109/SNW.2010.5562577","url":null,"abstract":"In summary, a novel RRAM with the structure of Cu/SixOyNz/W was first fabricated and its characteristics are thoroughly investigated. The new device exhibited low switching voltages and low reset currents, demonstrating its potential for low-power applications. Repeatable unipolar resistive switching characteristics in terms of high off/on resistance ratio and good retention capability were observed. The switching mechanism of the device was analyzed and can be explained by the formation and rupture of vacancy-filaments.","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75582416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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