Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541694
Shinichi Tanaxa, T. Oda, Kento Saiki
The next generation mobile communication systems impose challenging performance, size and cost requirements on the power amplifiers. This paper presents novel DC-biasing circuits, which are compact and yet can control the harmonics almost arbitrarily, thereby allowing to save the space for additional harmonic tuning circuit. The proposed circuit consists of a composite right-/left-handed (CRLH) transmission line (TL) stub, of which the size and harmonic-control function can be tuned by modifying the dispersion diagram of the stub line. As a proof of concept, a compact 2-GHz 5-W GaN HEMT class-F PA using the versatile CRLH-TL stubs was fabricated, demonstrating 85% drain efficiency and 76% Dower-added efficiency.
下一代移动通信系统对功率放大器提出了具有挑战性的性能、尺寸和成本要求。本文提出了一种新颖的直流偏置电路，该电路结构紧凑，几乎可以任意控制谐波，从而节省了额外谐波调谐电路的空间。该电路由一根复合的左/右传输线(CRLH)短线组成，通过修改短线的色散图可以调节短线的大小和谐波控制功能。作为概念验证，使用多功能CRLH-TL stub制造了紧凑型2 ghz 5 w GaN HEMT类f级PA，其漏极效率为85%，功耗增加效率为76%。
{"title":"Novel DC-Biasing Circuits With Arbitrary Harmonic-Control Capability for Compact High-Efficiency Power Amplifiers","authors":"Shinichi Tanaxa, T. Oda, Kento Saiki","doi":"10.23919/EUMC.2018.8541694","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541694","url":null,"abstract":"The next generation mobile communication systems impose challenging performance, size and cost requirements on the power amplifiers. This paper presents novel DC-biasing circuits, which are compact and yet can control the harmonics almost arbitrarily, thereby allowing to save the space for additional harmonic tuning circuit. The proposed circuit consists of a composite right-/left-handed (CRLH) transmission line (TL) stub, of which the size and harmonic-control function can be tuned by modifying the dispersion diagram of the stub line. As a proof of concept, a compact 2-GHz 5-W GaN HEMT class-F PA using the versatile CRLH-TL stubs was fabricated, demonstrating 85% drain efficiency and 76% Dower-added efficiency.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"8 1","pages":"13-16"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80463398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541759
Yi-Hsien Lin, Yu-Ci Li, Wen-Jie Lin, Jeng‐Han Tsai, A. Alshehri, M. Almalki, A. Sayed, Tian-Wei Huang
This paper presents a Ka-band high linearity resistive up-conversion mixer using $0.18-mu mathrm{m}$ standard CMOS technology. A LO boosting linearization technique is introduced to improve the linearity and conversion gain of the up-conversion mixer. From the experimental results, the resistive up-conversion mixer demonstrates a peak conversion gain of −8.5 dB at RF frequency of 28.1 GHz and IF signal of 100 MHz with zero dc power consumption. After adding the LO boosting linearization technique, the up-conversion mixer achieves an output 1-dB compression point $(OP_{mathit{1}dB})$ of −2.7 dBm via LO drive power of 10 dBm at 28.1 GHz. In addition, the up-conversion mixer features an IF bandwidth of 5 GHz which is suitable for high-speed wireless communication applications.
{"title":"A Ka-band High Linearity Up-Conversion Mixer with LO Boosting Linearization Technique","authors":"Yi-Hsien Lin, Yu-Ci Li, Wen-Jie Lin, Jeng‐Han Tsai, A. Alshehri, M. Almalki, A. Sayed, Tian-Wei Huang","doi":"10.23919/EUMC.2018.8541759","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541759","url":null,"abstract":"This paper presents a Ka-band high linearity resistive up-conversion mixer using $0.18-mu mathrm{m}$ standard CMOS technology. A LO boosting linearization technique is introduced to improve the linearity and conversion gain of the up-conversion mixer. From the experimental results, the resistive up-conversion mixer demonstrates a peak conversion gain of −8.5 dB at RF frequency of 28.1 GHz and IF signal of 100 MHz with zero dc power consumption. After adding the LO boosting linearization technique, the up-conversion mixer achieves an output 1-dB compression point $(OP_{mathit{1}dB})$ of −2.7 dBm via LO drive power of 10 dBm at 28.1 GHz. In addition, the up-conversion mixer features an IF bandwidth of 5 GHz which is suitable for high-speed wireless communication applications.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"48 1","pages":"259-262"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84543792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541782
Kohei Fujiwara, A. Kanno, Koichi Tokita
In order to realize a high-speed wireless link for a high-speed vehicle, such as a bullet train, we propose a radio over fiber (RoF) technique with a single-sideband optical modulator. The system is compliant with the IEEE 802.11ad standard and operation in the W-band is successful. The optical modulator is driven by an automatic bias controller. In this paper, we report a demonstration of the RoF system, which has archived an error vector magnitude of 4.8% on 16-QAM.
{"title":"IEEE 802.11ad Packet Transmission Based SSB Optical Modulation on Radio-Over-Fiber in the 90-GHz Band","authors":"Kohei Fujiwara, A. Kanno, Koichi Tokita","doi":"10.23919/EUMC.2018.8541782","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541782","url":null,"abstract":"In order to realize a high-speed wireless link for a high-speed vehicle, such as a bullet train, we propose a radio over fiber (RoF) technique with a single-sideband optical modulator. The system is compliant with the IEEE 802.11ad standard and operation in the W-band is successful. The optical modulator is driven by an automatic bias controller. In this paper, we report a demonstration of the RoF system, which has archived an error vector magnitude of 4.8% on 16-QAM.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"135 1","pages":"712-715"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85247260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541628
K. Abdalmalak, G. Santamaría-Botello, C. S. Lee, A. Rivera-Lavado, L. García-Castillo, D. Segovia-Vargas, L. García-Muñoz
In this paper, a scheme for a direct coupling of the microwave radiation into a nonlinear whispering-gallery mode (WGM) receiver is presented. This nonlinear receiver can be used for the detection of the weak radiation for radio astronomy applications at room temperature. It depends on the upconverting of the microwave signal into the optical domain through a nonlinear material. The proposed scheme is able to provide a very high theoretical photonic efficiency with an enhancement around 2–3 orders of magnitude in comparison to the state-of-the-art photonic efficiency of this concept, to the best of the authors knowledge. It consists of two main parts, a metallic ring resonator, and a Dielectric Resonator Antenna (DRA).
{"title":"Microwave Radiation Coupling into a WGM Resonator for a High-Photonic-Efficiency Nonlinear Receiver","authors":"K. Abdalmalak, G. Santamaría-Botello, C. S. Lee, A. Rivera-Lavado, L. García-Castillo, D. Segovia-Vargas, L. García-Muñoz","doi":"10.23919/EUMC.2018.8541628","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541628","url":null,"abstract":"In this paper, a scheme for a direct coupling of the microwave radiation into a nonlinear whispering-gallery mode (WGM) receiver is presented. This nonlinear receiver can be used for the detection of the weak radiation for radio astronomy applications at room temperature. It depends on the upconverting of the microwave signal into the optical domain through a nonlinear material. The proposed scheme is able to provide a very high theoretical photonic efficiency with an enhancement around 2–3 orders of magnitude in comparison to the state-of-the-art photonic efficiency of this concept, to the best of the authors knowledge. It consists of two main parts, a metallic ring resonator, and a Dielectric Resonator Antenna (DRA).","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"62 1","pages":"781-784"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85640276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541599
Maruf Hossain, N. Weimann, W. Heinrich, V. Krozer
Local oscillator signal generation with low phase-noise is an important topic for future communications systems operating in D-band and beyond. This paper presents a D-band fundamental reflection-type source with high DC-to-RF efficiency and low phase-noise properties, realized using a transferred-substrate (TS) $mathbf{0.8} mu mathbf{m}$ InP-DHBT process. It delivers 9.5 dBm peak output power, with 2 GHz tuning range. The DC consumption is only 43.5 mW from a single 2.5 volts power supply, which corresponds to 20 % peak DC-to-RF efficiency. The measured single side band (SSB) phase noise reaches −94 dBc/Hz and −115 dBc/Hz at 1 MHz and 10 MHz offset frequency, respectively. To the knowledge of the authors, this is the highest DC-to-RF efficiency reported so far in this frequency range with excellent phase noise performance and state-of-the-art output power.
{"title":"Highly Efficient D-Band Fundamental Frequency Source Based on InP-DHBT Technology","authors":"Maruf Hossain, N. Weimann, W. Heinrich, V. Krozer","doi":"10.23919/EUMC.2018.8541599","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541599","url":null,"abstract":"Local oscillator signal generation with low phase-noise is an important topic for future communications systems operating in D-band and beyond. This paper presents a D-band fundamental reflection-type source with high DC-to-RF efficiency and low phase-noise properties, realized using a transferred-substrate (TS) $mathbf{0.8} mu mathbf{m}$ InP-DHBT process. It delivers 9.5 dBm peak output power, with 2 GHz tuning range. The DC consumption is only 43.5 mW from a single 2.5 volts power supply, which corresponds to 20 % peak DC-to-RF efficiency. The measured single side band (SSB) phase noise reaches −94 dBc/Hz and −115 dBc/Hz at 1 MHz and 10 MHz offset frequency, respectively. To the knowledge of the authors, this is the highest DC-to-RF efficiency reported so far in this frequency range with excellent phase noise performance and state-of-the-art output power.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"26 1","pages":"1005-1008"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85872838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EURAD.2018.8546551
P. Deo, D. Mirshekar-Syahkal, G. Zheng
A full-duplex system is realised using dual EBG isolated rectangular spiral antennas and its performance is compared with the same full-duplex system using a circulator and a single spiral antenna element. The new antenna system consists of two antennas one with RHCP and the another one with LHCP implemented on a single substrate. Two columns of EBG is placed between the two antennas to improve the isolation. At the operating frequency of 3.2 GHz, the antenna configuration has nearly 31 dB isolation. For the identical baseband input power, the full-duplex system utilising dual spiral antenna configuration exhibits 9 dB higher isolation than the circulator based full-duplex system.
{"title":"EBG Enhanced Broadband Dual Antenna Configuration for Passive Self-Interference Suppression in Full-Duplex Communications","authors":"P. Deo, D. Mirshekar-Syahkal, G. Zheng","doi":"10.23919/EURAD.2018.8546551","DOIUrl":"https://doi.org/10.23919/EURAD.2018.8546551","url":null,"abstract":"A full-duplex system is realised using dual EBG isolated rectangular spiral antennas and its performance is compared with the same full-duplex system using a circulator and a single spiral antenna element. The new antenna system consists of two antennas one with RHCP and the another one with LHCP implemented on a single substrate. Two columns of EBG is placed between the two antennas to improve the isolation. At the operating frequency of 3.2 GHz, the antenna configuration has nearly 31 dB isolation. For the identical baseband input power, the full-duplex system utilising dual spiral antenna configuration exhibits 9 dB higher isolation than the circulator based full-duplex system.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"66 1","pages":"1481-1484"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85971202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541565
S. Moscato, M. Oldoni, G. Parisi
Next generation mm-wave communications foresee to heavily rely on higher frequency bands, such as the E- and D-bands. At these frequencies, novel transmission line technologies can emerge and the confinement properties of a cylindrical dielectric rod look indeed attractive to realize short mm-wave junctions or moveable joints. This paper investigates the possibility of a Plexiglas-based radio fiber for the aforementioned purposes. The described design flow is based on the well-known optical fiber theory to assess the guided modes, their cut-off frequency and their shapes. This manuscript reports also the experimental results of three E-band radio fiber junctions and their propagation characteristics.
{"title":"E-band Radio Fiber as Low-Cost mm- Wave Waveguide Junction","authors":"S. Moscato, M. Oldoni, G. Parisi","doi":"10.23919/EUMC.2018.8541565","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541565","url":null,"abstract":"Next generation mm-wave communications foresee to heavily rely on higher frequency bands, such as the E- and D-bands. At these frequencies, novel transmission line technologies can emerge and the confinement properties of a cylindrical dielectric rod look indeed attractive to realize short mm-wave junctions or moveable joints. This paper investigates the possibility of a Plexiglas-based radio fiber for the aforementioned purposes. The described design flow is based on the well-known optical fiber theory to assess the guided modes, their cut-off frequency and their shapes. This manuscript reports also the experimental results of three E-band radio fiber junctions and their propagation characteristics.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"1 1","pages":"404-407"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79508451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541403
M. Ćwikliński, C. Friesicke, F. van Raay, Hermann Maβler, R. Quay, O. Ambacher
We report on a new type of broadband radial stub. It consists of two inclined half-stubs, which are separated by a small gap at their vertices. This radial stub can provide −15 dB rejection over almost 29% fractional bandwidth, which is an 86% improvement over the conventional radial stub. Using this stub in a double-sided (butterfly) configuration results in a −15 dB rejection bandwidth of about 61%, higher by a factor of two than in the case of a conventional butterfly stub. This stub was utilized in the DC-bias paths of a GaN power amplifier, which can provide more than 10 dB of gain between 60 and 110 GHz, resulting in the first-ever GaN power amplifier able to cover the whole W-band (75–110 GHz).
{"title":"A Novel Type of Broadband Radial Stub","authors":"M. Ćwikliński, C. Friesicke, F. van Raay, Hermann Maβler, R. Quay, O. Ambacher","doi":"10.23919/EUMC.2018.8541403","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541403","url":null,"abstract":"We report on a new type of broadband radial stub. It consists of two inclined half-stubs, which are separated by a small gap at their vertices. This radial stub can provide −15 dB rejection over almost 29% fractional bandwidth, which is an 86% improvement over the conventional radial stub. Using this stub in a double-sided (butterfly) configuration results in a −15 dB rejection bandwidth of about 61%, higher by a factor of two than in the case of a conventional butterfly stub. This stub was utilized in the DC-bias paths of a GaN power amplifier, which can provide more than 10 dB of gain between 60 and 110 GHz, resulting in the first-ever GaN power amplifier able to cover the whole W-band (75–110 GHz).","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"1 1","pages":"1093-1096"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85528548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539877
T. Shivan, M. Hossain, I. D. Stoppel, N. Weimann, S. Schulz, R. Doerner, V. Krozer, W. Heinrich
This paper reports an ultra-wideband low-noise amplifier in a transferred-substrate InP DHBT technology. The wideband characteristics are obtained by using a distributed topology with cascode unit cells. Each unit cell consists of two cascode-connected transistors with 500 nm emitter length and an $f_{t/}f_{max}$ of ∼ 350/400 GHz respectively. Due to optimum line-impedance matching, low common-base transistor's capacitance, and low collector-current operation, the circuit also exhibits a low noise figure. The measured circuit shows a bandwidth of 40 … 185 GHz with a noise figure of 8 dB in the frequency range 75 … 105 GHz. Moreover, this circuit demonstrates the widest 3-dB bandwidth operation among all reported single stage amplifiers with cascode configuration.
{"title":"An Ultra-broadband Low-Noise Distributed Amplifier in InP DHBT Technology","authors":"T. Shivan, M. Hossain, I. D. Stoppel, N. Weimann, S. Schulz, R. Doerner, V. Krozer, W. Heinrich","doi":"10.23919/EUMIC.2018.8539877","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539877","url":null,"abstract":"This paper reports an ultra-wideband low-noise amplifier in a transferred-substrate InP DHBT technology. The wideband characteristics are obtained by using a distributed topology with cascode unit cells. Each unit cell consists of two cascode-connected transistors with 500 nm emitter length and an $f_{t/}f_{max}$ of ∼ 350/400 GHz respectively. Due to optimum line-impedance matching, low common-base transistor's capacitance, and low collector-current operation, the circuit also exhibits a low noise figure. The measured circuit shows a bandwidth of 40 … 185 GHz with a noise figure of 8 dB in the frequency range 75 … 105 GHz. Moreover, this circuit demonstrates the widest 3-dB bandwidth operation among all reported single stage amplifiers with cascode configuration.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"17 1","pages":"1209-1212"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76655108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541607
K. Daffé, F. Mubarak, V. Mascolo, H. Votsi, N. Ridler, G. Dambrine, I. Roch, K. Haddadi
On-wafer microwave characterization and uncertainty evaluation of two-port coplanar waveguide (CPW) high impedance nanodevices are proposed. The test devices are manufactured with resistive metallic nano-films integrated in tapered CPW structures. Microwave conductance in the range 100–500 $mu mathbf{S}$ associated to parallel capacitances in the order of hundreds aF are exemplary shown up to 20 GHz. The uncertainty corresponding to the post-calibration residual errors-terms is provided. In addition, a sensitivity analysis investigating technological process variability using FEM-based EM modelling is considered.
{"title":"On-Wafer Broadband Microwave Measurement of High Impedance Devices-CPW Test Structures with Integrated Metallic Nano-Resistances","authors":"K. Daffé, F. Mubarak, V. Mascolo, H. Votsi, N. Ridler, G. Dambrine, I. Roch, K. Haddadi","doi":"10.23919/EUMC.2018.8541607","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541607","url":null,"abstract":"On-wafer microwave characterization and uncertainty evaluation of two-port coplanar waveguide (CPW) high impedance nanodevices are proposed. The test devices are manufactured with resistive metallic nano-films integrated in tapered CPW structures. Microwave conductance in the range 100–500 $mu mathbf{S}$ associated to parallel capacitances in the order of hundreds aF are exemplary shown up to 20 GHz. The uncertainty corresponding to the post-calibration residual errors-terms is provided. In addition, a sensitivity analysis investigating technological process variability using FEM-based EM modelling is considered.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"9 1","pages":"25-28"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82124038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：