Pub Date : 2018-03-01DOI: 10.1109/EDCT.2018.8405077
Soma Boral, A. K. Mondai
Ad hoc network has the potentiality to connect different wireless devices to enable more powerful application and mobile computing capabilities. MIMO provides significantly higher data rate and support diversity during the channel degredation in Ad hoc networks. In this paper we exploit the cooperative relay transmission to cope with the channel harsh condition. The MIMO in ad hoc network gives the multiple path for data transmission through multiple antenna. Using this concept, the secret sharing scheme is incorporated to avoid the data loss due to certain breakage of links or paths failure. The important measure of the capacity of a MIMO channel is the outage capacity. We have simulated the networks and shown the performance of the networks in terms of outage capacity and throughput with different SNR values.
{"title":"Outage capacity in MIMO Ad hoc network using co-operative relay and secret sharing scheme","authors":"Soma Boral, A. K. Mondai","doi":"10.1109/EDCT.2018.8405077","DOIUrl":"https://doi.org/10.1109/EDCT.2018.8405077","url":null,"abstract":"Ad hoc network has the potentiality to connect different wireless devices to enable more powerful application and mobile computing capabilities. MIMO provides significantly higher data rate and support diversity during the channel degredation in Ad hoc networks. In this paper we exploit the cooperative relay transmission to cope with the channel harsh condition. The MIMO in ad hoc network gives the multiple path for data transmission through multiple antenna. Using this concept, the secret sharing scheme is incorporated to avoid the data loss due to certain breakage of links or paths failure. The important measure of the capacity of a MIMO channel is the outage capacity. We have simulated the networks and shown the performance of the networks in terms of outage capacity and throughput with different SNR values.","PeriodicalId":6507,"journal":{"name":"2018 Emerging Trends in Electronic Devices and Computational Techniques (EDCT)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75969855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-03-01DOI: 10.1109/EDCT.2018.8405079
P. Chowdhury, Kuheli Dutta, Sunipa Roy
As down-scaling of transistors and up-scaling of technology creating an overwhelming inversely proportional scenario in today's VLSI era, three major components taking into account while designing of CMOS memory cells. As the technology shrinks down, the power dissipation widely impacts to SRAM cells. Along with the power consumption, delay and stability of SRAM cell is also becoming a challenging issue day by day. In this paper, a low power designing approach is being introduced taking advantages of combination architectures of Transmission Gate logic and Gated ground sleep logic. The Transmission Gate invokes a leakage free sub-threshold scenario when Gated ground sleep logic provides a swiftly stacking effect which jointly can induce lowering down power consumption in SRAM cell. This new approach can significantly reduce power consumption upto 75% compared to conventional 6T-SRAM cell. All the experimental works are done by tSPICE 16 with 0.25μm technology.
{"title":"A new Gated -ground- sleep architecture for ultra low leakage of SRAM cell","authors":"P. Chowdhury, Kuheli Dutta, Sunipa Roy","doi":"10.1109/EDCT.2018.8405079","DOIUrl":"https://doi.org/10.1109/EDCT.2018.8405079","url":null,"abstract":"As down-scaling of transistors and up-scaling of technology creating an overwhelming inversely proportional scenario in today's VLSI era, three major components taking into account while designing of CMOS memory cells. As the technology shrinks down, the power dissipation widely impacts to SRAM cells. Along with the power consumption, delay and stability of SRAM cell is also becoming a challenging issue day by day. In this paper, a low power designing approach is being introduced taking advantages of combination architectures of Transmission Gate logic and Gated ground sleep logic. The Transmission Gate invokes a leakage free sub-threshold scenario when Gated ground sleep logic provides a swiftly stacking effect which jointly can induce lowering down power consumption in SRAM cell. This new approach can significantly reduce power consumption upto 75% compared to conventional 6T-SRAM cell. All the experimental works are done by tSPICE 16 with 0.25μm technology.","PeriodicalId":6507,"journal":{"name":"2018 Emerging Trends in Electronic Devices and Computational Techniques (EDCT)","volume":"11 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88698802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-03-01DOI: 10.1109/EDCT.2018.8405080
N. Banerjee, Sunipa Roy
A comparative study on alcohol sensing performance of ZnO nano-flowers is reported in this paper. Chemical bath deposition technique was employed to develop the nanostructure on a sol-gel grown seed layer deposited on SiO2 substrate using Zinc Acetate Dihydrate and Hexamethylenetetramine (HMT) precursors in DI water in the mass ratio of 1:3. After structural (XRD, FESEM) characterizations, the sensor was tested for sensing alcohol (methanol and ethanol) vapor at 250°C in dynamic range of 100 to 700 ppm. The sensor showed high response magnitude ~85.45% with ~9.6 sec response time at methanol vapor but while obtaining ~54.90% response magnitude at ethanol vapor with very low response time 2.83 sec in 700 ppm at a temperature of 250°C.
{"title":"Alcohol sensing performance of ZnO nano-flower based resistive sensor: Comparative study","authors":"N. Banerjee, Sunipa Roy","doi":"10.1109/EDCT.2018.8405080","DOIUrl":"https://doi.org/10.1109/EDCT.2018.8405080","url":null,"abstract":"A comparative study on alcohol sensing performance of ZnO nano-flowers is reported in this paper. Chemical bath deposition technique was employed to develop the nanostructure on a sol-gel grown seed layer deposited on SiO2 substrate using Zinc Acetate Dihydrate and Hexamethylenetetramine (HMT) precursors in DI water in the mass ratio of 1:3. After structural (XRD, FESEM) characterizations, the sensor was tested for sensing alcohol (methanol and ethanol) vapor at 250°C in dynamic range of 100 to 700 ppm. The sensor showed high response magnitude ~85.45% with ~9.6 sec response time at methanol vapor but while obtaining ~54.90% response magnitude at ethanol vapor with very low response time 2.83 sec in 700 ppm at a temperature of 250°C.","PeriodicalId":6507,"journal":{"name":"2018 Emerging Trends in Electronic Devices and Computational Techniques (EDCT)","volume":"41 12","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72625790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-03-01DOI: 10.1109/EDCT.2018.8405084
Moumita Pal, Swapan Bhattacharyya, Tresata Sarkar
Offline Signature is an exceptional feature which makes any human as unique from other persons, and by their own handwritten signature one person can be identified . Gender identification may be considered as one of the key features for human identification. In this paper, gender discrimination has been proposed by feature extraction method . The proposed framework considers handwritten hindi signature of each individuals as an input for gender detection . Afterwards, several features are extracted from those images. The extracted features and their values are stored as data, which is further classified using Support vector Machine(SVM) & Back Propagation Neural Network (BPNN), seeking to improve performance on the task. The proposed system is divided into two parts. In the first part, several features such as roundness, skewness, kurtosis, mean, standard deviation, area, Euler number, distribution density of black pixel, entropy, equi-diameter, connected component (cc) and perimeter were taken as feature. Then obtained features are divided into two categories. In the first category experimental feature set contains Euler number, whereas in the second category the obtained feature set excludes the same. In this proposed work, exploring a range of architectures, and obtaining a large improvement in state-of-the- art performance on the training dataset, the largest publicly available dataset on the task. In the training dataset, we obtained reports an improvement of 4.7% in gender classification system by the inclusion of Euler number as a feature, instead of usig only BPNN classifier.
{"title":"Euler number based feature extraction technique for gender discrimination from offline Hindi signature using SVM & BPNN classifier","authors":"Moumita Pal, Swapan Bhattacharyya, Tresata Sarkar","doi":"10.1109/EDCT.2018.8405084","DOIUrl":"https://doi.org/10.1109/EDCT.2018.8405084","url":null,"abstract":"Offline Signature is an exceptional feature which makes any human as unique from other persons, and by their own handwritten signature one person can be identified . Gender identification may be considered as one of the key features for human identification. In this paper, gender discrimination has been proposed by feature extraction method . The proposed framework considers handwritten hindi signature of each individuals as an input for gender detection . Afterwards, several features are extracted from those images. The extracted features and their values are stored as data, which is further classified using Support vector Machine(SVM) & Back Propagation Neural Network (BPNN), seeking to improve performance on the task. The proposed system is divided into two parts. In the first part, several features such as roundness, skewness, kurtosis, mean, standard deviation, area, Euler number, distribution density of black pixel, entropy, equi-diameter, connected component (cc) and perimeter were taken as feature. Then obtained features are divided into two categories. In the first category experimental feature set contains Euler number, whereas in the second category the obtained feature set excludes the same. In this proposed work, exploring a range of architectures, and obtaining a large improvement in state-of-the- art performance on the training dataset, the largest publicly available dataset on the task. In the training dataset, we obtained reports an improvement of 4.7% in gender classification system by the inclusion of Euler number as a feature, instead of usig only BPNN classifier.","PeriodicalId":6507,"journal":{"name":"2018 Emerging Trends in Electronic Devices and Computational Techniques (EDCT)","volume":"1993 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89804648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-03-01DOI: 10.1109/EDCT.2018.8405086
Rikta Majumder, S. Dolui, Debasis Agasti, Surajit Biswas
This project is to design IDMT (Inverse Definite Minimum Time) Over current Relay using Arduino. The relay can be used to sense faults in transmission line based on analog to digital conversion of the 3-phase current and when a current in a part of a power system exceeds a pre-set value either due to a fault or a large overload, the relay will isolate the part through sending trip signal to a circuit breaker. The main features which have encouraged the design and development of Arduino based protective relays are their economy, compactness, reliability, flexibility and improved performance over conventional relays.
{"title":"Micro-controller based over current relay using Hall Effect current sensor","authors":"Rikta Majumder, S. Dolui, Debasis Agasti, Surajit Biswas","doi":"10.1109/EDCT.2018.8405086","DOIUrl":"https://doi.org/10.1109/EDCT.2018.8405086","url":null,"abstract":"This project is to design IDMT (Inverse Definite Minimum Time) Over current Relay using Arduino. The relay can be used to sense faults in transmission line based on analog to digital conversion of the 3-phase current and when a current in a part of a power system exceeds a pre-set value either due to a fault or a large overload, the relay will isolate the part through sending trip signal to a circuit breaker. The main features which have encouraged the design and development of Arduino based protective relays are their economy, compactness, reliability, flexibility and improved performance over conventional relays.","PeriodicalId":6507,"journal":{"name":"2018 Emerging Trends in Electronic Devices and Computational Techniques (EDCT)","volume":"5 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79787960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-03-01DOI: 10.1109/EDCT.2018.8405082
Ritika Sharma, A. Senapati, J. S. Roy
One of the important technologies used in present day cellular network is adaptive smart antenna where cell site is able to communicate in desired direction only and by minimizing undesired interferences. This paper presents a modified least mean square algorithm known as leaky least mean square (LLMS) algorithm for beamforming in smart antenna. Analysis of beamforming using leaky LMS is done based on main beam direction, null direction, maximum side lobe level (SLLmax) and convergence by varying parameters such as the step size and leak factor for different number of antenna array elements.
{"title":"Beamforming of smart antenna in cellular network using leaky LMS algorithm","authors":"Ritika Sharma, A. Senapati, J. S. Roy","doi":"10.1109/EDCT.2018.8405082","DOIUrl":"https://doi.org/10.1109/EDCT.2018.8405082","url":null,"abstract":"One of the important technologies used in present day cellular network is adaptive smart antenna where cell site is able to communicate in desired direction only and by minimizing undesired interferences. This paper presents a modified least mean square algorithm known as leaky least mean square (LLMS) algorithm for beamforming in smart antenna. Analysis of beamforming using leaky LMS is done based on main beam direction, null direction, maximum side lobe level (SLLmax) and convergence by varying parameters such as the step size and leak factor for different number of antenna array elements.","PeriodicalId":6507,"journal":{"name":"2018 Emerging Trends in Electronic Devices and Computational Techniques (EDCT)","volume":"66 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77224099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-03-01DOI: 10.1109/EDCT.2018.8405089
S. Dey, B. Dey, S. Bhattacherjee
In this paper, we report for the first time the effect of composition fraction on the subthreshold behaviour for an n- channel InAsxSb1-x UTB MOSFET in nanoscale regime. Our model is based on numerical simulation technique using ATLAS, the 2-D device simulator. We have used ATLAS to obtain the drain current ID, transconductance gM, threshold voltage and subthreshold slope taking into account the effect of composition fraction (x). The drain current model is calibrated with reported experimental data. The transfer characteristic curves are utilized to find the threshold voltage and subthreshold slope as a function of composition fraction of InAsxSb1-x channel UTB MOSFETS. Our investigation reveals that composition fraction has a strong impact on the drain current and transconductance in subthreshold and weak inversion region. ON - OFF current ratio as well as subthreshold slope can be improved by changing the composition fraction of InAsxSb1-x alloy. Also threshold voltage can be shifted by changing the same.
{"title":"Effects of composition fraction on subthreshold behavior of InAsxSb(1-x) channel UTB MOSFETs","authors":"S. Dey, B. Dey, S. Bhattacherjee","doi":"10.1109/EDCT.2018.8405089","DOIUrl":"https://doi.org/10.1109/EDCT.2018.8405089","url":null,"abstract":"In this paper, we report for the first time the effect of composition fraction on the subthreshold behaviour for an n- channel InAsxSb1-x UTB MOSFET in nanoscale regime. Our model is based on numerical simulation technique using ATLAS, the 2-D device simulator. We have used ATLAS to obtain the drain current ID, transconductance gM, threshold voltage and subthreshold slope taking into account the effect of composition fraction (x). The drain current model is calibrated with reported experimental data. The transfer characteristic curves are utilized to find the threshold voltage and subthreshold slope as a function of composition fraction of InAsxSb1-x channel UTB MOSFETS. Our investigation reveals that composition fraction has a strong impact on the drain current and transconductance in subthreshold and weak inversion region. ON - OFF current ratio as well as subthreshold slope can be improved by changing the composition fraction of InAsxSb1-x alloy. Also threshold voltage can be shifted by changing the same.","PeriodicalId":6507,"journal":{"name":"2018 Emerging Trends in Electronic Devices and Computational Techniques (EDCT)","volume":"5 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76757374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-03-01DOI: 10.1109/EDCT.2018.8405099
Arpan Kumar Lahiri, K. Saha, Debasis Agasti, Bapita Roy
Electricity crisis is a very common fact in today's world. Conventional lighting system requires huge electricity consumption. So some smart systems are used for illumination purposes which can maximize the utilization of available natural resources. One of the smart options which can replace the conventional lighting system using electricity is the use of natural resources for illumination where sunlight can't reach in the day time. The sunlight harvesting system is that smart lighting system which can save electricity in subways, offices, malls, etc where daytime lighting is very much required. This smart system consists of optical fibers, focusing lens assembly, photo sensor and microcontroller. After transmission through the optical fiber the ambient light is focused on the lens assembly for illumination in all the places where the sunlight cannot be accessed directly. By using the Photo sensor assembly the proper position of the sun can be tracked which maximizes the light input into the optical fiber system. This assembly is also required to measure the intensity of sunlight to avoid the unfavorable lighting condition (cloudy days, etc.). According to the measured value the electric light intensity will be controlled automatically which results less energy consumption.
{"title":"Optical fibre based smart illumination system","authors":"Arpan Kumar Lahiri, K. Saha, Debasis Agasti, Bapita Roy","doi":"10.1109/EDCT.2018.8405099","DOIUrl":"https://doi.org/10.1109/EDCT.2018.8405099","url":null,"abstract":"Electricity crisis is a very common fact in today's world. Conventional lighting system requires huge electricity consumption. So some smart systems are used for illumination purposes which can maximize the utilization of available natural resources. One of the smart options which can replace the conventional lighting system using electricity is the use of natural resources for illumination where sunlight can't reach in the day time. The sunlight harvesting system is that smart lighting system which can save electricity in subways, offices, malls, etc where daytime lighting is very much required. This smart system consists of optical fibers, focusing lens assembly, photo sensor and microcontroller. After transmission through the optical fiber the ambient light is focused on the lens assembly for illumination in all the places where the sunlight cannot be accessed directly. By using the Photo sensor assembly the proper position of the sun can be tracked which maximizes the light input into the optical fiber system. This assembly is also required to measure the intensity of sunlight to avoid the unfavorable lighting condition (cloudy days, etc.). According to the measured value the electric light intensity will be controlled automatically which results less energy consumption.","PeriodicalId":6507,"journal":{"name":"2018 Emerging Trends in Electronic Devices and Computational Techniques (EDCT)","volume":"77 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79291323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-03-01DOI: 10.1109/EDCT.2018.8405096
Palasri Dhar, A. Ghosal
In this paper, the authors have calculated the two dimensional mobility in ZnS, ZnSe and ZnTe as a function of temperature taking into account the different lattice scattering mechanisms, namely Ionised Impurity scattering and Acoustic phonon scattering. A comparative study of two dimensional mobility of ZnS,ZnSe and ZnTe has been made.
{"title":"Two dimensional mobility in Zinc Sulpide (ZnS) single quantum well, Zinc Selenide (ZnSe) and Zinc telluride(ZnTe) single quantum well : A comparative study","authors":"Palasri Dhar, A. Ghosal","doi":"10.1109/EDCT.2018.8405096","DOIUrl":"https://doi.org/10.1109/EDCT.2018.8405096","url":null,"abstract":"In this paper, the authors have calculated the two dimensional mobility in ZnS, ZnSe and ZnTe as a function of temperature taking into account the different lattice scattering mechanisms, namely Ionised Impurity scattering and Acoustic phonon scattering. A comparative study of two dimensional mobility of ZnS,ZnSe and ZnTe has been made.","PeriodicalId":6507,"journal":{"name":"2018 Emerging Trends in Electronic Devices and Computational Techniques (EDCT)","volume":"60 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83030892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-03-01DOI: 10.1109/EDCT.2018.8405056
S. Haldar, S. Chakraborty
This paper presents a novel method for defining, analyzing and implementing a ternary based configurable digital modulator to realize amplitude, phase and frequency shift keying techniques. The proposed modulator is developed by ternary logic based combinational circuits such as ternary multiplexers, ternary decoders, standard ternary inverters for switching of three types of carrier signal .Ternary multiplexers are used as a basic building block for configurable modulator with the help of control logic. The architecture has been validated using standard EDA tool. The power dissipation of entire modulator for various modulation schemes, modulated waveforms and transient delay analysis for different carrier frequencies have been presented in detail.
{"title":"Implementation and study of high speed multimode digital modulator using ternary logic","authors":"S. Haldar, S. Chakraborty","doi":"10.1109/EDCT.2018.8405056","DOIUrl":"https://doi.org/10.1109/EDCT.2018.8405056","url":null,"abstract":"This paper presents a novel method for defining, analyzing and implementing a ternary based configurable digital modulator to realize amplitude, phase and frequency shift keying techniques. The proposed modulator is developed by ternary logic based combinational circuits such as ternary multiplexers, ternary decoders, standard ternary inverters for switching of three types of carrier signal .Ternary multiplexers are used as a basic building block for configurable modulator with the help of control logic. The architecture has been validated using standard EDA tool. The power dissipation of entire modulator for various modulation schemes, modulated waveforms and transient delay analysis for different carrier frequencies have been presented in detail.","PeriodicalId":6507,"journal":{"name":"2018 Emerging Trends in Electronic Devices and Computational Techniques (EDCT)","volume":"4 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75383601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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