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Transformation of the Band Structure of Nanostructured Films ZnO:Al During Photocatalysis in Ultraviolet Radiation 紫外光催化下ZnO:Al纳米膜带结构的转变
IF 0.4 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-11-15 DOI: 10.1134/S1027451025701472
N. D. Yakushova, I. A. Gubich, I. A. Pronin, A. A. Karmanov, V. A. Moshnikov

A simple one-stage sol–gel technique for the synthesis of nanostructured ZnO films modified with Al has been developed. A comparative study of the effect of zinc oxide modification with aluminum, as well as the simultaneous action of methyl orange and ultraviolet radiation on their optical band gap, has been carried out. The contribution of each factor to the transformation of the band structure of the samples has been estimated. It has been shown that for all considered aluminum concentrations, the role of dye adsorption is predominant. A nonmonotonic dependence of the optical band gap of the material on the modifier content has been demonstrated, as well as its significant decrease upon dye adsorption and exposure to ultraviolet radiation. It has been suggested that the growth of the considered value in ZnO with an increase in the Al concentration to 2 at % is associated with the manifestation of the Burstein–Moss effect due to the filling of the lower levels of the conduction band with electrons. The results of the study of the samples by spectroscopy in the visible and ultraviolet wavelength ranges are supplemented by experimental data obtained using scanning electron microscopy. It was found that at all considered aluminum concentrations, the ZnO films are characterized by a nanostructured surface formed by intertwined “branches” of different sizes. A model is proposed that describes the fixation of methyl orange on the surface of the studied samples.

提出了一种简单的单阶段溶胶-凝胶法制备Al修饰ZnO纳米薄膜的方法。对比研究了氧化锌与铝的改性效果,以及甲基橙和紫外辐射对其光学带隙的同时作用。估计了各因素对样品带结构转变的贡献。研究表明,对于所有考虑的铝浓度,染料吸附的作用是主要的。材料的光学带隙对改性剂含量的非单调依赖性已被证明,以及其在染料吸附和暴露于紫外线辐射后的显着降低。当Al浓度增加到2 at %时,ZnO中考虑值的增长与由于电子填充导电带的较低水平而引起的Burstein-Moss效应的表现有关。在可见光和紫外光谱范围内对样品的研究结果补充了扫描电子显微镜获得的实验数据。研究发现,在所有考虑铝浓度的情况下,ZnO薄膜的特征是由不同大小的“分支”相互缠绕形成的纳米结构表面。提出了一个模型来描述甲基橙在研究样品表面的固定。
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引用次数: 0
Influence of the Nickel Cluster Size at the α-Al2O3(0001) Surface on the Adsorption of Nitric Oxide Molecules α-Al2O3(0001)表面镍簇尺寸对一氧化氮分子吸附的影响
IF 0.4 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-11-15 DOI: 10.1134/S1027451025701381
T. T. Magkoev, Y. Men, R. Behjatmanesh-Ardakani, M. Elahifard, O. G. Ashkhotov

A combination of surface analysis methods and density functional theory calculations showed that the electronic and adsorption properties of nickel nanoclusters on the α-Al2O3(0001) film surface toward nitric oxide (NO) molecules strongly depend on the cluster size. The properties of Ni clusters with an effective size not exceeding 2 nm are mainly determined by the formation of a Ni–Al2O3 chemisorption bond polarized toward the oxide substrate. As a result, Ni nanoparticles acquire a positive charge, which strengthens the intramolecular bond of NO molecules adsorbed on their surface compared with adsorption on the surface of bulk Ni. With an increase in cluster size, the chemisorption bond is depolarized due to stronger lateral Ni–Ni interactions, and at a coverage thickness exceeding 0.25 equivalent monolayers, the adsorption properties become similar to those of bulk Ni. This size dependence of properties provides a means of controlling the electronic and adsorption characteristics of the metal cluster and the metal–oxide system as a whole.

结合表面分析方法和密度泛函理论计算表明,α-Al2O3(0001)薄膜表面镍纳米团簇对一氧化氮(NO)分子的电子和吸附性能强烈依赖于团簇大小。有效尺寸不超过2 nm的Ni簇的性质主要取决于Ni - al2o3向氧化物衬底极化的化学吸附键的形成。结果,Ni纳米颗粒获得了正电荷,与大块Ni表面的吸附相比,这加强了NO分子在其表面的分子内键。随着簇大小的增加,化学吸附键由于更强的横向Ni - Ni相互作用而去极化,当覆盖厚度超过0.25等效单层时,吸附性能与体Ni相似。这种性质的大小依赖性提供了一种控制金属簇和金属氧化物系统作为一个整体的电子和吸附特性的方法。
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引用次数: 0
Study of the Initiation of Nuclear Reactions in Boron-Containing Targets by a Beam of Deuterium Ions with an Energy of <50 keV at the HELIS Ion Accelerator HELIS离子加速器中能量< 50kev的氘离子束引发含硼靶核反应的研究
IF 0.4 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-11-15 DOI: 10.1134/S1027451025701265
M. A. Negodaev, A. S. Rusetskii, A. V. Oginov, A. F. Popovich, K. V. Shpakov, G. E. Sedov, M. A. Kirsanov, S. G. Klimanov, D. E. Karmanov, V. N. Amosov, S. A. Meshchaninov, N. B. Rodionov

Experimental data on the yield of nuclear-reaction products from boron-containing crystalline targets irradiated with a deuterium ion beam with an energy of <50 keV at the HELIS ion accelerator (Lebedev Physical Institute) are presented. Natural boron and boron carbide (B4C) are used as targets. For comparison, experiments on the same setup to measure the yield of nuclear reaction products during the irradiation of boron-containing targets with a neutron flux from a Ti (99.99%) converter target are carried out. Semiconductor detectors, CR-39 track detectors, and neutron scintillation spectrometers are used to record the nuclear-reaction products (charged particles and neutrons). The possibility of initiating nuclear reactions of 10B + n7Li + α and p + 11B → 3α with a deuterium ion beam with an energy of <50 keV is demonstrated. However, the high background from the main products of nuclear reactions (D + D) (protons and neutrons) do not allow quantitative estimates of the yield of alpha particles of nuclear-reaction products from proton and neutron capture by boron. The obtained results may be important in the field of radiation medicine for the proton- and neutron-capture therapy of oncological diseases.

本文介绍了在HELIS离子加速器(列别捷夫物理研究所)用能量为50 keV的氘离子束辐照含硼晶体靶的核反应产物产率的实验数据。以天然硼和碳化硼(B4C)为靶材。为了比较,在相同的装置上进行了用Ti(99.99%)转炉靶的中子通量辐照含硼靶时的核反应生成量的测量实验。利用半导体探测器、CR-39径迹探测器和中子闪烁光谱仪记录核反应产物(带电粒子和中子)。证明了在能量为50 keV的氘离子束下引发10B + n→7Li + α和p + 11B→3α核反应的可能性。然而,核反应的主要产物(D + D)(质子和中子)的高本底不能定量估计硼捕获质子和中子的核反应产物的α粒子的产率。所得结果在放射医学领域对肿瘤疾病的质子和中子俘获治疗具有重要意义。
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引用次数: 0
Structural Characterization of Copper Centers in Mordenite-Type Zeolite at the Oxygen Activation Stage 氧活化阶段丝光沸石中铜中心的结构表征
IF 0.4 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-11-15 DOI: 10.1134/S1027451025701162
A. M. Ermakova, G. B. Sukharina, Ya. N. Gladchenko-Djevelekis, K. D. Kulaev, V. V. Pryadchenko, E. E. Lysenko, A. S. Babayants, L. A. Avakyan, L. A. Bugaev

Copper-containing zeolites are promising catalysts for the reaction of direct oxidation of methane to methanol. In this work, the structure of copper active centers in mordenite-type zeolites prepared by aqueous ion exchange was investigated using X-ray absorption near edge structure (XANES) spectroscopy and computer modeling. Calculations of theoretical Cu K-edge XANES spectra were performed for a set of models of active copper centers containing one, two, or three copper atoms. The main problem is the difficulty in defining the local atomic structure of copper centers, which are unevenly distributed in the zeolite framework and largely determine the catalytic properties of the material. In order to describe the experimental Cu K-edge XANES spectra corresponding to the oxygen activation stage at a temperature of 200°C, it is necessary to take into account the superposition of models of copper and copper oxide centers. The most probable local atomic environment of copper in the studied material at the considered stage of the catalytic cycle was determined. The results obtained are important for establishing the relationship between the structure and catalytic properties of mordenite-type zeolites, as well as for the development of new efficient catalysts.

在甲烷直接氧化制甲醇反应中,含铜沸石是很有前景的催化剂。利用x射线吸收近边结构(XANES)光谱和计算机模拟研究了水离子交换法制备的丝光沸石型沸石中铜活性中心的结构。对一组含有一个、两个或三个铜原子的活性铜中心模型进行了理论Cu k边XANES光谱的计算。主要问题是难以确定铜中心的局部原子结构,铜中心在沸石骨架中分布不均匀,在很大程度上决定了材料的催化性能。为了描述200℃下氧活化阶段对应的实验Cu K-edge XANES光谱,需要考虑铜和铜氧化物中心模型的叠加。在催化循环的考虑阶段,确定了所研究材料中铜最可能的局部原子环境。所得结果对于建立丝光沸石型分子筛的结构与催化性能之间的关系,以及开发新型高效催化剂具有重要意义。
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引用次数: 0
Potential of High-Frequency Cathode Sputtering Method for Synthesis of Lead-Containing Antiferroelectric Films 高频阴极溅射法合成含铅反铁电薄膜的潜力
IF 0.4 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-11-15 DOI: 10.1134/S1027451025701332
N. S. Zhukova, A. E. Ganzha, M. A. Kniazeva, A. V. Filimonov, A. S. Goltaev, A. V. Pavlenko, R. G. Burkovsky

The potential of using the method of high-frequency cathode sputtering in an oxygen atmosphere for the synthesis of thin-film lead-containing antiferroelectric materials is investigated. Two films with the chemical composition of the PbHfO3 target were synthesized on Si(001) and SrRuO3/SrTiO3/MgO(001) substrates. The formed films were characterized by single-crystal X-ray diffraction, including reciprocal space mapping, and energy dispersive spectroscopy. It has been demonstrated that this synthesis method makes it possible to grow polycrystalline films based on materials with a perovskite structure. In this case, an epitaxial film with rhombic syngony and a new crystal lattice different from that known for PbHfO3 was obtained on a heterophase substrate. The revealed ratio of the parameters of the film cells and the intermediate layer is 7 to 6; that is, the coincidence of the nodes of the film and substrate structure occurs when 7 unit cells of the film and 6 unit cells of the SrRuO3 layer are superimposed. This indicates the complex nature of the orientation. The morphology analysis showed significant differences between the samples in terms of grain size and distribution. The data obtained confirm the high sensitivity of the phase composition to the type of substrate and demonstrate the promise of the high-frequency cathode sputtering method for creating new functional oxide films suitable for use in microelectronics, sensors, and energy-efficient devices.

研究了用高频阴极溅射法制备含铅反铁电薄膜材料的潜力。在Si(001)和SrRuO3/SrTiO3/MgO(001)衬底上合成了两种具有phbhfo3靶化学成分的薄膜。通过单晶x射线衍射、互易空间映射和能量色散光谱对所形成的薄膜进行了表征。研究表明,这种合成方法可以在具有钙钛矿结构的材料上生长多晶薄膜。在这种情况下,在异相衬底上获得了具有菱形共形和不同于phbhfo3的新晶格的外延膜。所述膜单元与中间层参数的显示比为7∶6;即当薄膜的7个单元格与SrRuO3层的6个单元格叠加时,薄膜和衬底结构的节点发生重合。这表明了取向的复杂性。形貌分析表明,样品在晶粒大小和分布上存在显著差异。所获得的数据证实了相组成对衬底类型的高灵敏度,并展示了高频阴极溅射方法在创建适合用于微电子,传感器和节能设备的新型功能氧化膜方面的前景。
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引用次数: 0
Measurement of Quantum Efficiency of Photocathodes in the Photon Energy Range 40–100 keV 光子能量40-100 keV范围内光电阴极量子效率的测量
IF 0.4 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-11-15 DOI: 10.1134/S1027451025701174
N. S. Vorobiev, O. I. Meshkov, N. I. Razumov, S. V. Reva, B. P. Tolochko, E. V. Shashkov

The results of a study on the quantum yield of various photocathodes designed to detect X-ray radiation with an energy above 40 keV are presented. Experiments have been conducted with photocathode samples made of CsI, LaB6, CdWO4, and ZnWO4 using synchrotron radiation from the wiggler at the VEPP-4M accelerator. These materials have been chosen due to their high atomic numbers Z, which ensures effective interaction with X-rays through the photoelectric effect. The study has been carried out in the energy range 40–100 keV, which corresponds to the conditions of experiments on fast-flowing physical processes requiring high temporal and spatial resolution. The data obtained allow us to determine the most suitable materials for creating effective photocathodes in electron-optical converters for recording fast physical processes.

本文介绍了用于探测能量在40kev以上的x射线辐射的各种光电阴极的量子产率的研究结果。在VEPP-4M加速器上,利用摆动器的同步辐射对由CsI、LaB6、CdWO4和ZnWO4制成的光电阴极样品进行了实验。选择这些材料是因为它们的高原子序数Z,这确保了通过光电效应与x射线的有效相互作用。该研究在40-100 keV的能量范围内进行,对应于需要高时空分辨率的快速流动物理过程的实验条件。获得的数据使我们能够确定最合适的材料,用于在电子-光学转换器中创建有效的光电阴极,以记录快速物理过程。
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引用次数: 0
Soft X-ray Imaging Spectroscopy Based on Commercial Uncooled CMOS Detectors 基于商用非冷却CMOS探测器的软x射线成像光谱学
IF 0.4 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-11-15 DOI: 10.1134/S1027451025701356
S. V. Kuzin, A. S. Kirichenko, A. A. Pertsov, V. I. Chervinsky, D. A. Zolotov, A. A. Rusakov, N. I. Chkhalo, S. A. Garakhin, D. G. Reunov, S. A. Bogachev, I. P. Loboda, A. A. Reva

Detectors based on CMOS (CMOS is a complementary metal–oxide–semiconductor structure) matrices are widely used to solve a wide range of problems that require imaging. In addition to their widespread use in conventional cameras, including mobile phones, today they are increasingly used in various fields of science and technology: dosimetry and imaging neutron and X-ray spectroscopy. On the basis of such devices both X-ray microscopy devices and X-ray telescopes can be built, for example, for studying various astrophysical objects. The possibility of using two CMOS matrices from Sony IMX265LLR-C and IMX226CLJ-C for simultaneous imaging and spectral acquisition in the soft X-ray range is considered. It is shown that in the range from 1 to 22 keV, the detectors have a high energy resolution. A comparison of two matrices is carried out, and their features for use in recording radiation in various energy ranges are considered.

基于CMOS (CMOS是一种互补金属-氧化物-半导体结构)矩阵的探测器被广泛用于解决各种需要成像的问题。除了在包括手机在内的传统相机中广泛使用外,如今它们越来越多地用于各种科学和技术领域:剂量学和成像中子和x射线光谱学。在这种设备的基础上,可以建造x射线显微镜设备和x射线望远镜,例如,用于研究各种天体物理物体。考虑了使用索尼IMX265LLR-C和IMX226CLJ-C两种CMOS矩阵在软x射线范围内同时成像和光谱采集的可能性。结果表明,在1 ~ 22 keV范围内,探测器具有较高的能量分辨率。对两种矩阵进行了比较,并考虑了它们在不同能量范围内记录辐射的特点。
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引用次数: 0
Features of High-Intensity Implantation of Chromium into Zr1%Nb Alloy Using a High-Power Density Repetitively-Pulsed Ion Beam 高功率密度重复脉冲离子束高强度注入Zr1%Nb合金铬的特性
IF 0.4 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-11-15 DOI: 10.1134/S1027451025701320
A. I. Ryabchikov, A. V. Gurulev, I. A. Bozhko, S. V. Dektyarev, O. S. Korneva

The features of the synergy of high-intensity implantation of chromium ions into Zr1%Nb alloy with simultaneous repetitively-pulsed energy impact of a high-power density beam on the irradiated surface have been studied. The possibility of deep ion alloying (up to 7 µm) with a maximum concentration of implanted atoms at the surface of up to 60 at % has been demonstrated for the first time. It has been revealed that chromium distribution in Zr1%Nb alloy over both the surface and the depth of the target is inhomogeneous. The possibility of providing conditions for deep radiation-enhanced diffusion in the surface layer while preserving the microstructure of the material outside the ion-alloyed region has been experimentally confirmed. The effect of refining the crystal structure in an ion-doped layer under conditions of multiple repetitively-pulsed energy impact of a high-power density ion beam on the alloy surface has been discovered.

研究了高强度铬离子注入Zr1%Nb合金与高功率密度光束同时在辐照表面上的重复脉冲能量冲击协同作用的特点。深离子合金化的可能性(高达7 μ m),在表面注入原子的最大浓度高达60% at %已首次被证明。结果表明,zr1 - nb合金中铬在靶材表面和深度上的分布是不均匀的。实验证实了为表面深层辐射增强扩散提供条件的可能性,同时保留了离子合金区域外材料的微观结构。发现了在高功率密度离子束多次重复脉冲能量撞击合金表面的条件下,离子掺杂层中细化晶体结构的作用。
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引用次数: 0
Experimental Observation of Transition from Two-Dimensional Turbulent Vortex Flow of Water to Three-Dimensional 二维湍流涡旋水流向三维过渡的实验观察
IF 0.4 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-09-25 DOI: 10.1134/S1027451025700909
A. V. Poplevin, A. A. Levchenko, A. M. Likhter, S. V. Filatov, L. P. Mezhov-Deglin

It has been experimentally shown that an increase in the water depth from 2 to 4 cm leads to the transition from two-dimensional to three-dimensional turbulence. Waves with a frequency of 6 Hz (wavelength λ = 5.6 cm) propagating on the water surface generate vortex flows penetrating into the water volume. The experiments show that in “shallow” water with a depth of h = 2 cm, the vortex flow is homogeneous and quasi-two-dimensional: the vertical velocity component of tracer particles is zero, and the vorticity vector is oriented vertically. In “deep” water (h = 4 cm), there is a developed three-dimensional chaotic liquid motion: the water layers are mixed due to solenoidal flows with both vertical and horizontal velocity components. Vortices in the liquid interact with surface flows, leading to an increase in their energy. As a result of this interaction, the energy of surface vortices, E(t), after turning off the pumping demonstrates a nonmonotonic dependence on time, which differs from the exponential decay characteristic of shallow water.

实验表明,水深从2 cm增加到4 cm会导致二维湍流向三维湍流的转变。频率为6hz(波长λ = 5.6 cm)的波浪在水面上传播时,会产生穿透水体的涡流。实验表明,在水深为h = 2 cm的“浅”水中,涡旋流动是均匀的准二维流动,示踪粒子的垂直速度分量为零,涡量矢量为垂直取向。在“深”水(h = 4 cm)中,存在发达的三维混沌液体运动:水层由于具有垂直和水平速度分量的螺线形流动而混合。液体中的涡旋与表面流动相互作用,导致其能量增加。由于这种相互作用,在关闭泵送后,表面涡的能量E(t)表现出对时间的非单调依赖,这与浅水的指数衰减特征不同。
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引用次数: 0
Properties of Interface Structures Based on Oxidized Lead Selenide 氧化硒化铅的界面结构性质
IF 0.4 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-09-25 DOI: 10.1134/S1027451025700910
N. A. Tulina, A. N. Rossolenko, I. M. Shmytko, I. Y. Borisenko, D. N. Borisenko, N. N. Kolesnikov

In this work, single-phase monocrystalline and thin-film samples of lead selenide have been synthesized. Methods have been developed for the creation of surface oxidized lead selenide with a conductivity different from that of the base PbSe. Using oxidized lead selenide as an interface, Ag/Pb3OSeO3/PbSe heterostructures were made, demonstrating stable memristive characteristics. The obtained heterojunctions were investigated for the detection of resistive switching, and the volt -ampere characteristics and the temperature dependence of the resistance of the structures were measured. By changing the external parameters—frequency and magnitude of the electric field voltage applied to the heterocontact—different metastable states were realized. Dynamic effects were studied, and the transition times from one to another metastable state were determined. Single crystal-based memristors were more stable than film structures: reproducible characteristics in single crystal-based memristors were observed for several months.

本文合成了硒化铅的单相单晶和薄膜样品。已经开发了制造具有不同于碱性硒化铅电导率的表面氧化硒化铅的方法。以氧化硒化铅为界面,制备出具有稳定记忆电阻特性的Ag/Pb3OSeO3/PbSe异质结构。对所得异质结进行了电阻开关检测,并测量了结构的伏安特性和电阻对温度的依赖关系。通过改变外加电场电压的频率和大小等外部参数,可以实现不同的亚稳态。研究了动态效应,确定了从一个亚稳态到另一个亚稳态的跃迁时间。单晶基忆阻器比薄膜结构更稳定:在几个月的时间里,我们观察到了单晶基忆阻器的可重复特性。
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引用次数: 0
期刊
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
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