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Determination of the Phase Composition of Vanadium Oxide Nanofibers 氧化钒纳米纤维相组成的测定
IF 0.4 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-11-15 DOI: 10.1134/S1027451025701423
A. S. Sharlaev, O. Ya. Berezina, D. V. Loginov, D. N. Larionov, N. A. Praslov

Using the electrospinning method nanofibers consisting of vanadium oxide phase mixture were obtained. Their phase and quantitative compositions were determined by X-ray phase and full-profile analysis methods. It has been shown that the calculation of relative concentrations during the analysis of the phase composition using the Qualitative Analysis program gives results with a high error. For the accurate determination of the phase concentration of vanadium oxide multiphase samples, it is necessary to use a full-profile analysis or a quantitative analysis method (if possible).

采用静电纺丝法制备了由氧化钒相混合物组成的纳米纤维。采用x射线相分析和全剖面分析方法测定了它们的物相和定量组成。结果表明,在分析相组成时,用定性分析程序计算相对浓度的结果误差较大。为了准确测定氧化钒多相样品的相浓度,必须采用全剖面分析或定量分析方法(如果可能的话)。
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引用次数: 0
Surface Modification of Commercially Pure Titanium by Combining Plasma-Electrolytic Carburizing, Polishing, and Microarc Oxidation 等离子-电解渗碳、抛光和微弧氧化相结合的工业纯钛表面改性研究
IF 0.4 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-11-15 DOI: 10.1134/S1027451025701368
I. V. Tambovskiy, I. A. Kusmanova, S. A. Kusmanov, T. L. Mukhacheva, A. O. Komarov, M. V. Ilyinskaya, M. I. Tambovskaya, Ya. R. Meleshkin, V. A. Gaponov, V. I. Morozov, A. E. Tkachenko, S. N. Grigoriev

The possibility of combining plasma-electrolytic carburizing, polishing, and microarc oxidation of commercially pure titanium to increase microhardness, wear resistance, and quality of the modified surface has been demonstrated. Using X-ray structural analysis methods, structural and phase changes on the surface and in surface layers after processing were studied, solid titanium carbides TiC and Ti8C5 were detected in the modified layer, and the diffusion depth of carbon and oxygen was determined. The influence of each of the plasma-electrolytic treatment methods on the tribological behavior in a friction pair with structural bearing steel was studied. The lowest surface friction coefficient was observed after carburizing at 900°C, polishing at 250 V, and microarc oxidation at a current density of 12 A/dm2. It was shown that an increase in the loss of mass during friction and the volume of removed material after combined treatment is associated with an increase in the contact area in the tribocoupling, which is confirmed by an increase in the wear of the counterbody. The quality of the modified surface was assessed based on the geometry data on the surface of wear marks, the complex Kragelsky–Kombalov criterion was calculated, and the type of wear was determined. The Kragelsky–Kombalov criterion after plasma-electrolytic treatment decreases by 1.2–1.4 times, which indicates an increase in the bearing capacity of the rough profile of modified samples. The wear mechanism is fatigue wear during plastic deformation of the tribological conjugation.

将商业纯钛的等离子电解渗碳、抛光和微弧氧化相结合,以提高显微硬度、耐磨性和改性表面质量的可能性已经得到证明。采用x射线结构分析方法,研究了加工后表面和表层的结构和相变化,在改性层中检测到固体碳化钛TiC和Ti8C5,并测定了碳和氧的扩散深度。研究了等离子体电解处理对结构轴承钢摩擦副摩擦学性能的影响。900℃渗碳、250 V抛光、12 a /dm2微弧氧化后,表面摩擦系数最低。结果表明,摩擦过程中质量损失的增加和复合处理后去除的材料体积的增加与摩擦联轴器接触面积的增加有关,这一点被副体磨损的增加所证实。根据磨损痕迹表面的几何数据,对改进后的表面质量进行评价,计算复合Kragelsky-Kombalov准则,确定磨损类型。等离子体电解处理后的Kragelsky-Kombalov准则降低了1.2 ~ 1.4倍,表明改性后试样粗剖面的承载能力有所提高。磨损机理为摩擦共轭塑性变形过程中的疲劳磨损。
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引用次数: 0
Numerical Calculation of the Intensity of Small-Angle Neutron Scattering on Volume Fractals 体积分形上小角中子散射强度的数值计算
IF 0.4 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-11-15 DOI: 10.1134/S1027451025701460
D. V. Lvov

An analytical and numerical study of multiple small-angle neutron scattering on volume fractals is carried out. The dependence of the intensity of multiple small-angle scattering on the scattering vector is determined for different Hausdorff dimensions and scattering multiplicities. It is shown that the graph of this dependence in double-logarithmic coordinates has a linear section at a small scattering multiplicity, and when the fractal dimension changes, the slope and length of this section change. Calculations have shown that with an increase in the scattering multiplicity, the slope of the linear section first decreases, and then the linear section practically disappears.

对体积分形上的多次小角中子散射进行了分析和数值研究。在不同的豪斯多夫维数和散射倍数下,确定了多次小角散射强度对散射矢量的依赖关系。结果表明,在双对数坐标下,这种依赖关系的图在散射多重度较小时具有线性截面,当分形维数发生变化时,该截面的斜率和长度也会发生变化。计算表明,随着散射倍数的增加,直线段的斜率先减小,然后直线段实际上消失。
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引用次数: 0
Influence of Annealing Parameters on the Structure and Properties of Copper-Carbon Coatings for Electrical Applications 退火参数对电气用铜碳涂层结构和性能的影响
IF 0.4 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-11-15 DOI: 10.1134/S1027451025701502
A. N. Kupo, A. S. Rudenkov, D. G. Piliptsou, Zhubo Liu

The paper shows that the structural and phase composition of copper-carbon coatings can be controlled not only by the annealing temperature, but also by the conditions of heat treatment: the presence of a chemically active atmosphere, its pressure and composition. Heat treatment at reduced pressure or in vacuum is promising, which allows eliminating the influence of thermal destruction processes, as well as establishing the mechanisms of the effect of temperature on the activation of phase transformations. In the work, heat treatment of the deposited carbon and copper coatings was carried out at various temperatures both in vacuum (8 Pa) and in air. The choice of the annealing temperature was determined by the thermal stability of the carbon component of the coating (up to 350°C). Composite coatings were deposited using various vacuum methods characterized by the energy of carbon ions, as well as the ion current density. Using Raman spectroscopy, the size of C clusters and the ratio of sp3-hybridized bonds in the carbon matrix were analyzed. It is shown that the minimum sizes of clusters, the fusion of which forms carbon particles, are characteristic of coatings applied by the pulse evaporation method of a composite copper-carbon cathode, with the cluster size being 2.5 nm. The maximum sizes of carbon clusters for the high-pulse magnetron sputtering method at a frequency of 5 kHz are found to be 7.8 nm. It is established that the physical and mechanical properties of the coatings depend on the modes and conditions of heat treatment.

本文表明,铜碳涂层的结构和相组成不仅可以由退火温度控制,还可以由热处理条件控制:化学活性气氛的存在、压力和成分。减压或真空热处理是很有前途的,它可以消除热破坏过程的影响,并建立温度对相变激活的影响机制。在工作中,对沉积的碳和铜涂层在真空(8pa)和空气中不同温度下进行热处理。退火温度的选择取决于涂层碳组分的热稳定性(高达350℃)。利用碳离子能量和离子电流密度等不同的真空方法制备复合涂层。利用拉曼光谱分析了碳基体中C簇的大小和sp3杂化键的比例。结果表明,脉冲蒸发法制备的铜碳复合阴极涂层的簇尺寸最小,簇尺寸为2.5 nm,簇的熔合形成碳颗粒。高脉冲磁控溅射法在5 kHz频率下的最大碳簇尺寸为7.8 nm。结果表明,涂层的物理力学性能与热处理方式和热处理条件有关。
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引用次数: 0
Electronic Structure and Substructure of Epitaxial Tin Nanolayers on Silicon According to Synchrotron Studies 基于同步加速器研究的硅外延锡纳米层的电子结构和亚结构
IF 0.4 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-11-15 DOI: 10.1134/S1027451025701459
N. I. Boikov, O. A. Chuvenkova, E. V. Parinova, M. D. Manyakin, S. I. Kurganskii, A. A. Makarova, D. A. Smirnov, R. G. Chumakov, A. M. Lebedev, K. A. Fateev, S. S. Titova, S. Yu. Turishchev

The specificity of the local atomic surrounding, the physicochemical state, and the electronic structure of five tin monolayers on a thin buffer layer of silicon formed epitaxially and their transformation as a result of thermal annealing are studied in situ in the present work. Using radiation from three synchrotron sources high-resolution surface-sensitive experimental methods, X-ray absorption near edge structure spectroscopy and X-ray photoelectron spectroscopy, were used as well as computer modeling. The possibility of oxygen atoms diffusion from tin to a buffer layer of silicon during storage of structures in laboratory conditions is shown. It is shown that during the formation of Sn/Si epitaxial nanolayers, there are no interatomic interactions at the heterogeneous boundaries of the structure, up to the possible formation of a tin-silicon solid solution, and, as a consequence, noticeable distortions of the electronic spectrum. However, high-temperature ultrahigh-vacuum annealing causes a phase rearrangement of the surface layers of such a structure accompanied by the redistribution of oxygen atoms from tin atoms to silicon of the epitaxial buffer with the formation of a thin layer of SiO2. Within the thin tin-silicon transition layer of the studied structures and along its boundaries complex bonds can be formed between tin, oxygen, and carbon atoms.

本文研究了外延形成的薄硅缓冲层上5层锡单分子层的局部原子周围的特异性、物理化学状态和电子结构,以及它们在原位热退火后的转变。利用三个同步加速器源的辐射,采用高分辨率表面敏感实验方法,x射线吸收近边结构能谱和x射线光电子能谱,并进行计算机模拟。在实验室条件下,显示了氧原子从锡扩散到硅缓冲层的可能性。结果表明,在Sn/Si外延纳米层的形成过程中,在结构的异质边界上没有原子间的相互作用,直到可能形成锡硅固溶体,并且,作为结果,电子光谱明显扭曲。然而,高温超高真空退火导致这种结构的表面层的相重排,并伴随着外延缓冲层的氧原子从锡原子重新分布到硅原子,形成一层薄薄的SiO2。在所研究结构的薄锡硅过渡层内及其边界可以在锡、氧和碳原子之间形成复杂的键。
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引用次数: 0
Referencing the XPS Binding Energies on Oxidized Surfaces of SiC 参考SiC氧化表面的XPS结合能
IF 0.4 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-11-15 DOI: 10.1134/S1027451025701307
P. V. Krasovskii

This study addresses one major uncertainty concerning referencing the XPS binding energies (BEs) on oxidized surfaces of silicon carbide (SiC). Based on the extensive catalogue of SiC powder spectra, two spectral features are compared as potential BE references, namely, the C1s photopeak from adventitious carbon and the O1s photopeak from the native oxidized overlayer. Referencing to adventitious carbon produces a systematic shift in the BEs of all species depending upon the degree of surface oxidation. In contrast, referencing to O1s yields SiC BEs that are reproducible to ±0.2 eV across a wide range of SiO2 surface concentrations. Stability in referencing to O1s is attributed to the prominent Si‒O‒Si coordination of oxygen over a wide range of SiCxOy surface compositions. When referenced to O1s, the BE values reported for different types of oxidized SiC substrates (crystal faces, films) compare favorably with those of the powders. Using the O1s reference and a few constraints to stabilize the curve fitting of the Si2p and C1s spectral envelopes, a broad range of SiC powder surface chemistries can be described in a consistent manner and in line with knowledge on other types of SiC substrates.

本研究解决了参考碳化硅(SiC)氧化表面XPS结合能(BEs)的一个主要不确定性。基于广泛的SiC粉末光谱目录,比较了两种光谱特征作为潜在的BE参考,即来自外来碳的C1s光峰和来自天然氧化覆盖层的O1s光峰。参考外来碳产生系统的转变,在所有物种的生物化学能取决于表面氧化的程度。相比之下,参考O1s得到的SiC BEs在很宽的SiO2表面浓度范围内可重现到±0.2 eV。参考O1s的稳定性归因于氧在广泛的SiCxOy表面组成中突出的Si-O-Si配位。当参考O1s时,不同类型氧化SiC衬底(晶面,薄膜)的BE值与粉末的BE值比较有利。使用O1s参考和一些约束来稳定Si2p和C1s光谱包络的曲线拟合,可以以一致的方式描述广泛的SiC粉末表面化学性质,并且与其他类型的SiC衬底的知识一致。
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引用次数: 0
Electrical Discharge Machining of Molybdenum Surface 钼表面电火花加工
IF 0.4 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-11-15 DOI: 10.1134/S1027451025701137
D. N. Borisenko

Electrical discharge machining of molybdenum surfaces used to increase hardness, heat resistance, and corrosion resistance of machine parts, units, and assemblies has been studied. It has been found that electrical discharge machining of molybdenum surfaces allows obtaining durable functional coatings of parts by using a high-voltage electric arc in a hydrogen atmosphere at a pressure of 0.1 MPa and a fixed gap between anode made of graphite and the processed surface of the part, cathode, at a rigid current–voltage characteristic of a pulsed current source with a voltage of 2000 V. The pulse duty cycle has been varied depending on required roughness of the molybdenum carbide Mo2C coating. Depending on the supplied power two carbide phases in different percentage ratio α-Mo2C : β-Mo2C were formed on the surface.

电火花加工钼表面用于提高硬度,耐热性和耐腐蚀性的机器零件,单元和组件已经研究。已经发现,在电压为2000 V的脉冲电流源的刚性电流-电压特性下,在氢气气氛中使用压力为0.1 MPa的高压电弧,在石墨制成的阳极和零件的加工表面(阴极)之间有固定的间隙,对钼表面进行电火花加工,可以获得零件的耐用功能涂层。脉冲占空比根据碳化钼Mo2C涂层所需的粗糙度而变化。根据供电功率的不同,表面形成α-Mo2C: β-Mo2C两种不同比例的碳化物相。
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引用次数: 0
Effect of Electron Irradiation on the Parameters of Gallium Nitride in a Wide Temperature Range 宽温度范围内电子辐照对氮化镓参数的影响
IF 0.4 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-11-15 DOI: 10.1134/S1027451025701241
A. A. Lebedev, A. V. Sakharov, G. A. Oganesyan, V. V. Kozlovski, D. A. Malevsky, M. E. Levinshtein, A. E. Nikolaev

When irradiating n-GaN obtained by the method of metal organic vapor phase epitaxy (MOVPE) with electrons with an energy of 0.9 MeV, the values of the carrier removal rate ηe for room temperature were established for the first time within the framework of the Van der Pauw method. At an initial (before irradiation) electron concentration of 1.87 × 1017 cm–3, the values of ηe were 0.023 and 0.054 cm–1 at room temperature (293 K) for doses Φn = 1.7 × 1017 and 3.7 × 1017 cm–2, respectively. With temperature decrease, the ηe value increases: at T = –55°C, the ηe values are 0.064 and 0.086 cm–1 for doses of 1.7 × 1017 and 3.7 × 1017 cm–2, respectively. The maximum mobility value in nonirradiated samples is 650 cm2/Vs. After irradiation with a dose of Φn = 3.7 × 1017 cm–2, the maximum mobility value decreases to 530 cm2/Vs. The change in mobility under the influence of irradiation is reliably traced at temperatures of T ≤ 260 K (1000/T ≈ 3.85).

用能量为0.9 MeV的电子辐照金属有机气相外延法(MOVPE)得到的n-GaN,首次在Van der Pauw方法的框架内建立了室温下载流子去除率ηe的值。当初始(辐照前)电子浓度为1.87 × 1017 cm-3时,在室温(293 K)下,当剂量Φn = 1.7 × 1017和3.7 × 1017 cm-2时,ηe分别为0.023和0.054 cm-1。随着温度的降低,ηe值增大,在T = -55℃时,1.7 × 1017和3.7 × 1017 cm-2的ηe值分别为0.064和0.086 cm-1。未辐照样品的最大迁移率值为650 cm2/Vs。在Φn = 3.7 × 1017 cm-2剂量照射后,最大迁移率降至530 cm2/Vs。在T≤260 K (1000/T≈3.85)的温度下,辐照影响下迁移率的变化可以可靠地追踪到。
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引用次数: 0
Numerical Modeling of Thermal Processes and the Effect of Heating of Near-Surface Silicon Layers on the Titanium Accumulation and Diffusion during High-Intensity Pulsed Ion Implantation 高强度脉冲离子注入过程中热过程的数值模拟及近表面硅层加热对钛积累和扩散的影响
IF 0.4 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-11-15 DOI: 10.1134/S1027451025701277
A. I. Ivanova, G. A. Bleykher, D. D. Zaitsev

Currently, industrialized countries are paying more and more attention to ion plasma technologies. That is because local doping of a certain zone or the entire surface instead of changing the properties of the sample’s entire volume is possible with the help of beam ion-plasma technologies. Ion bombardment changes almost all properties of the solid surface and the surface layer. The physical and mechanical properties of surface and near-surface layers of materials are the most important factors determining the durability and reliability of processed products. The article has considered the features of thermal processes and the effect of pulsed heating of near-surface silicon layers on diffusion transfer under conditions of synergy of high-intensity titanium ion implantation and the energy impact of a repetitively-pulsed beam of high power density on the surface in order to increase the ion alloying depth due to radiation-stimulated diffusion when heating of the entire sample is limited. The article presents the results of calculating the space-time distribution of temperature fields in silicon and the diffusion transfer of the implanted dopant under the action of submillisecond titanium ion beams.

目前,工业发达国家越来越重视离子等离子体技术。这是因为在束离子等离子体技术的帮助下,局部掺杂某一区域或整个表面而不是改变样品的整个体积的性质是可能的。离子轰击几乎改变了固体表面和表层的所有性质。材料表层和近表层的物理机械性能是决定加工产品耐久性和可靠性的最重要因素。本文考虑了在高强度钛离子注入和高功率密度重复脉冲光束对表面的能量冲击协同作用下,热过程的特点和近表面硅层脉冲加热对扩散传递的影响,以便在整个样品加热有限的情况下,通过辐射刺激扩散增加离子合金化深度。本文给出了在亚毫秒级钛离子束作用下硅中温度场的时空分布和注入掺杂剂的扩散传递的计算结果。
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引用次数: 0
Manufacturing of Atomically Smooth High-Precision Substrates for X-ray Mirrors from Single-Crystal Silicon by Chemical-Mechanical Polishing 用化学-机械抛光技术制备原子光滑的高精度x射线反射镜衬底
IF 0.4 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-11-15 DOI: 10.1134/S1027451025701149
N. I. Chkhalo, A. A. Akhsakhalyan, M. V. Zorina, I. V. Malyshev, M. S. Mikhailenko, S. N. Belyaev, O. A. Mal’shakova

A developed technology for chemical-mechanical polishing of large-sized single-crystal silicon substrates for X-ray optical applications is reported. Compared to the standard technology of chemical-mechanical polishing of silicon wafers for microelectronics, which emphasizes the atomic smoothness of substrates and a small damaged layer, high accuracy of the surface shape is demanded, which can be either flat or curved. Materials for polishing pads and suspensions for mechanical lapping and chemical-mechanical polishing, as well as the main parameters of the processing, were found that ensured an effective surface roughness of 0.17 nm in the spatial frequency range 0.025–65 μm–1 and a root-mean-square error of 8.86 nm of the surface shape deviating from the plane. The surface obtained using the developed technology is not inferior in roughness to the results of the world leading manufacturers of silicon wafers for microelectronics and significantly surpasses it in shape accuracy.

报道了一种用于x射线光学的大尺寸单晶硅衬底的化学机械抛光技术。与微电子硅片化学机械抛光的标准工艺相比,强调衬底的原子光洁度和小损伤层,对表面形状的精度要求很高,可以是平面的,也可以是弯曲的。在0.025 ~ 65 μm-1空间频率范围内,机械研磨和化学-机械抛光用抛光垫和悬浮液的有效表面粗糙度为0.17 nm,表面形状偏离平面的均方根误差为8.86 nm。利用所开发的技术获得的表面在粗糙度方面不低于世界领先的微电子硅片制造商的结果,并且在形状精度方面大大超过了它。
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引用次数: 0
期刊
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
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