Pub Date : 2025-11-28DOI: 10.1007/s40243-025-00342-6
Soni Prayogi, A. Muhammad
Enhancing the energy conversion efficiency of hydrogenated amorphous silicon (a-Si: H) solar cells remains a key objective in advancing thin-film photovoltaic technology. This study presents a comprehensive numerical optimization of a-Si: H p-i-n solar cells using the OghmaNano simulation platform under standard AM1.5G illumination (100 mW/cm2). The modeling accounts for Shockley–Read–Hall (SRH) recombination, carrier mobility, and field-dependent generation to ensure physical accuracy. The investigation focused on simultaneous optimization of the intrinsic layer thickness (100–600 nm) and bandgap tuning (1.6–1.95 eV) to determine their combined influence on device performance. Results revealed that the trade-off between open-circuit voltage (Voc) and short-circuit current (Jsc) is governed by the balance between enhanced light absorption and increased carrier recombination. An intrinsic layer thickness of 200 nm and bandgap of 1.95 eV yielded the optimal configuration, achieving a simulated efficiency of 11.27%. This value aligns with experimental benchmarks when idealized conditions are considered. The findings confirm that dual-parameter optimization combining geometrical and electronic tuning can substantially improve carrier collection and energy conversion efficiency. Compared with previous studies, the proposed design demonstrates superior performance and provides clear guidelines for the structural engineering of high-efficiency a-Si: H solar cells.
{"title":"Comprehensive optimization of a-Si: H p-i-n structures for enhanced energy harvesting","authors":"Soni Prayogi, A. Muhammad","doi":"10.1007/s40243-025-00342-6","DOIUrl":"10.1007/s40243-025-00342-6","url":null,"abstract":"<div><p>Enhancing the energy conversion efficiency of <i>hydrogenated amorphous silicon</i> (a-Si: H) solar cells remains a key objective in advancing thin-film photovoltaic technology. This study presents a comprehensive numerical optimization of a-Si: H p-i-n solar cells using the OghmaNano simulation platform under standard AM1.5G illumination (100 mW/cm<sup>2</sup>). The modeling accounts for <i>Shockley–Read–Hall</i> (SRH) recombination, carrier mobility, and field-dependent generation to ensure physical accuracy. The investigation focused on simultaneous optimization of the intrinsic layer thickness (100–600 nm) and bandgap tuning (1.6–1.95 eV) to determine their combined influence on device performance. Results revealed that the trade-off between <i>open-circuit voltage</i> (Voc) and <i>short-circuit current</i> (Jsc) is governed by the balance between enhanced light absorption and increased carrier recombination. An intrinsic layer thickness of 200 nm and bandgap of 1.95 eV yielded the optimal configuration, achieving a simulated efficiency of 11.27%. This value aligns with experimental benchmarks when idealized conditions are considered. The findings confirm that dual-parameter optimization combining geometrical and electronic tuning can substantially improve carrier collection and energy conversion efficiency. Compared with previous studies, the proposed design demonstrates superior performance and provides clear guidelines for the structural engineering of high-efficiency a-Si: H solar cells.</p></div>","PeriodicalId":692,"journal":{"name":"Materials for Renewable and Sustainable Energy","volume":"15 1","pages":""},"PeriodicalIF":5.5,"publicationDate":"2025-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s40243-025-00342-6.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145847853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-26DOI: 10.1007/s40243-025-00339-1
Ranjeet Kumar Mishra, D. Jaya Prasanna Kumar, Sampath Chinnam, Ravi Sankannavar, Abhishek Sharma, Kaustubha Mohanty
The escalating demand for efficient and sustainable energy storage solutions has spotlighted post-modified biochar materials as promising candidates for supercapacitor electrodes due to their high power density, rapid charge/discharge rates, and long-term stability. This review provides a comprehensive analysis of recent advancements in the synthesis, activation, and functionalization of biochar for supercapacitor applications. Various biomass sources, including agricultural and industrial wastes, have been pyrolysed or hydrothermally carbonised and further activated using agents such as KOH, NaOH, ZnCl₂, and H₃PO₄, achieving specific surface areas (SSA) as high as 3577 m²/g and pore volumes up to 2.3 cm³/g. The electrochemical performance is significantly enhanced through heteroatom doping (N, O, S, P) and metal oxide composite formation, leading to specific capacitances ranging from 252 F/g to 550 F/g and energy densities up to 45.69 Wh/kg. Further, surface modification improves wettability and electron transport while mesopore/hierarchical structures facilitate ion diffusion. The nitrogen-doped biochar demonstrated a specific capacitance of 420 F g− 1 at 1 A g− 1.m, whereas KOH-activated walnut shell-derived biochar exhibited 3577 m²/g SSA and 81% capacitance retention over 5000 cycles. Also, surface oxidation techniques have improved wettability and charge transfer, leading to excellent long-term cycling stability, with capacitance retention above 95% after 10,000 cycles. Owing to increased attention towards eco-friendly, viable, and scalable energy solutions, this article presents a thorough overview of the advanced techniques to treat biochar as supercapacitors. Challenges such as scalability, performance, and cost-effectiveness are presented, and a discussion of the future outlook for integrating biochar for sustainable energy storage is provided.
{"title":"Recent progress in post-modified biochar-based material for supercapacitor applications: a review","authors":"Ranjeet Kumar Mishra, D. Jaya Prasanna Kumar, Sampath Chinnam, Ravi Sankannavar, Abhishek Sharma, Kaustubha Mohanty","doi":"10.1007/s40243-025-00339-1","DOIUrl":"10.1007/s40243-025-00339-1","url":null,"abstract":"<div><p>The escalating demand for efficient and sustainable energy storage solutions has spotlighted post-modified biochar materials as promising candidates for supercapacitor electrodes due to their high power density, rapid charge/discharge rates, and long-term stability. This review provides a comprehensive analysis of recent advancements in the synthesis, activation, and functionalization of biochar for supercapacitor applications. Various biomass sources, including agricultural and industrial wastes, have been pyrolysed or hydrothermally carbonised and further activated using agents such as KOH, NaOH, ZnCl₂, and H₃PO₄, achieving specific surface areas (SSA) as high as 3577 m²/g and pore volumes up to 2.3 cm³/g. The electrochemical performance is significantly enhanced through heteroatom doping (N, O, S, P) and metal oxide composite formation, leading to specific capacitances ranging from 252 F/g to 550 F/g and energy densities up to 45.69 Wh/kg. Further, surface modification improves wettability and electron transport while mesopore/hierarchical structures facilitate ion diffusion. The nitrogen-doped biochar demonstrated a specific capacitance of 420 F g<sup>− 1</sup> at 1 A g<sup>− 1</sup>.m, whereas KOH-activated walnut shell-derived biochar exhibited 3577 m²/g SSA and 81% capacitance retention over 5000 cycles. Also, surface oxidation techniques have improved wettability and charge transfer, leading to excellent long-term cycling stability, with capacitance retention above 95% after 10,000 cycles. Owing to increased attention towards eco-friendly, viable, and scalable energy solutions, this article presents a thorough overview of the advanced techniques to treat biochar as supercapacitors. Challenges such as scalability, performance, and cost-effectiveness are presented, and a discussion of the future outlook for integrating biochar for sustainable energy storage is provided.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":692,"journal":{"name":"Materials for Renewable and Sustainable Energy","volume":"14 3","pages":""},"PeriodicalIF":5.5,"publicationDate":"2025-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s40243-025-00339-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145612999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-26DOI: 10.1007/s40243-025-00337-3
Muhammad Zulqarnain Abbasi, Shayan Tariq Jan, Haseeb Ahmad Khan, Muhammad Sheraz, Anees Ur Rehman, Wajahat Ullah Khan Tareen, Muhammad Abid Saeed, Teong Chee Chuah, Obaid Ur Rehman, Waleed Jan
Perovskite solar cells (PSCs) have gained immense interest as next-generation photovoltaics due to their impressive power conversion efficiencies (PCEs), ease of fabrication, and low production costs. Despite their potential, practical implementation is hindered by challenges such as interfacial recombination, suboptimal energy band alignment, and stability issues. This study addresses these challenges by investigating a novel perovskite-derived absorber material, Sr3AsI3, in combination with advanced charge transport layers (CTLs) to enhance device performance. Six distinct PSC configurations were systematically analyzed using polyethyleneimine ethoxylated (PEIE) and tungsten disulfide (WS2) as electron transport layers (ETLs), and copper-based oxides (Cu2O, SrCu2O2) and molybdenum disulfide (MoS2) as hole transport layers (HTLs). Initial configurations with 300-nm absorbers yielded PCEs in the range of 15.7–24.2%, depending on the CTL combination. A stepwise optimization was conducted by varying absorber thickness, absorber/CTL doping concentrations, and incorporating a reflective back surface. The most significant improvement resulted from increasing absorber thickness to 1200–1250 nm, which enhanced photocurrent collection. Optimized structures with absorber doping concentrations of 1 × 1017–1 × 1018 cm−3 delivered substantially improved efficiencies. Among all cases, the PEIE/Sr3AsI3/Cu2O and WS2/Sr3AsI3/Cu2O configurations achieved peak PCEs of 28.52% and 28.50%, with Voc of 0.91 V, Jsc of 35.7 mA/cm2, and FF of 87%. These findings demonstrate the effectiveness of absorber thickness and controlled doping optimization in Sr3AsI3-based PSCs, providing a robust framework for designing stable, high-efficiency perovskite photovoltaics for practical energy applications.
{"title":"Strategic integration of charge transport layers in novel Sr3AsI3 perovskite solar cells for enhanced photovoltaic performance","authors":"Muhammad Zulqarnain Abbasi, Shayan Tariq Jan, Haseeb Ahmad Khan, Muhammad Sheraz, Anees Ur Rehman, Wajahat Ullah Khan Tareen, Muhammad Abid Saeed, Teong Chee Chuah, Obaid Ur Rehman, Waleed Jan","doi":"10.1007/s40243-025-00337-3","DOIUrl":"10.1007/s40243-025-00337-3","url":null,"abstract":"<div><p>Perovskite solar cells (PSCs) have gained immense interest as next-generation photovoltaics due to their impressive power conversion efficiencies (PCEs), ease of fabrication, and low production costs. Despite their potential, practical implementation is hindered by challenges such as interfacial recombination, suboptimal energy band alignment, and stability issues. This study addresses these challenges by investigating a novel perovskite-derived absorber material, Sr<sub>3</sub>AsI<sub>3</sub>, in combination with advanced charge transport layers (CTLs) to enhance device performance. Six distinct PSC configurations were systematically analyzed using polyethyleneimine ethoxylated (PEIE) and tungsten disulfide (WS<sub>2</sub>) as electron transport layers (ETLs), and copper-based oxides (Cu<sub>2</sub>O, SrCu<sub>2</sub>O<sub>2</sub>) and molybdenum disulfide (MoS<sub>2</sub>) as hole transport layers (HTLs). Initial configurations with 300-nm absorbers yielded PCEs in the range of 15.7–24.2%, depending on the CTL combination. A stepwise optimization was conducted by varying absorber thickness, absorber/CTL doping concentrations, and incorporating a reflective back surface. The most significant improvement resulted from increasing absorber thickness to 1200–1250 nm, which enhanced photocurrent collection. Optimized structures with absorber doping concentrations of 1 × 10<sup>17</sup>–1 × 10<sup>18</sup> cm<sup>−3</sup> delivered substantially improved efficiencies. Among all cases, the PEIE/Sr<sub>3</sub>AsI<sub>3</sub>/Cu<sub>2</sub>O and WS<sub>2</sub>/Sr<sub>3</sub>AsI<sub>3</sub>/Cu<sub>2</sub>O configurations achieved peak PCEs of 28.52% and 28.50%, with Voc of 0.91 V, Jsc of 35.7 mA/cm<sup>2</sup>, and FF of 87%. These findings demonstrate the effectiveness of absorber thickness and controlled doping optimization in Sr<sub>3</sub>AsI<sub>3</sub>-based PSCs, providing a robust framework for designing stable, high-efficiency perovskite photovoltaics for practical energy applications.</p></div>","PeriodicalId":692,"journal":{"name":"Materials for Renewable and Sustainable Energy","volume":"14 3","pages":""},"PeriodicalIF":5.5,"publicationDate":"2025-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s40243-025-00337-3.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145613000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-26DOI: 10.1007/s40243-025-00336-4
Atta Ullah, Ibrar Ahmad, Adnan Sadiq, Muhammad Usman, Haris Haider, Muhammad Afzal, Khizar Hayat, Abdullah Shah, Zahir Shah, Narcisa Vrinceanu, Said Karim Shah
This work presents a comprehensive computational investigation of lead (Pb)-free CsSbCl4 Dion–Jacobson (DJ)-based perovskite solar cells (PSCs), combining density functional theory (DFT) and Solar Cell Capacitance Simulator (SCAPS 1-D) device simulations. The electronic and optical properties of CsSbCl4 were evaluated using two different exchange–correlation functionals, PBE-GGA and TB-mBJ. Notably, the band structure displays a direct bandgap of 1.395 eV with TB-mBJ, closely aligned with the Shockley–Queisser (SQ) limit, indicating the material’s suitability for high-performance photovoltaics. Projected density of states (PDOS) analysis revealed Sb s-states dominate the valence band (VB), and Sb 5p-states dominate the conduction band (CB), highlighting the central role of antimony in governing electronic transitions, while absorption spans the electromagnetic spectrum from UV to near IR, with a high absorption coefficient around 105 cm−1, ensuring efficient light harvesting. To optimize the solar cell architecture, key parameters were systematically tuned using SCAPS 1-D, including the selection of electron transport layer (ETL) and hole transport layer (HTL), absorber layer (AL) thickness, doping concentration (NA), and defect density (Nt) were varied to enhance device output. Further, the influence of external conditions like series resistance (Rs), shunt resistance (Rsh), operating temperatures (300–400 K), and solar irradiance on photovoltaic performance was rigorously investigated. After careful optimization, the simulated device achieved a high short-circuit current density (JSC) of 30.34 mA/cm2, an open-circuit voltage (VOC) of 1.04 V, a fill factor (FF) of 85.17%, and a power conversion efficiency (PCE) of 26.95%. Altogether, these findings not only underscore the potential of CsSbCl4 perovskite as a promising non-toxic Pb-free alternative but also provide a viable route toward the realization of high-efficiency next-generation photovoltaics.
{"title":"Exploring the photovoltaic potential of CsSbCl4 Dion Jacobson Perovskites through first-principle calculations and SCAPS simulations","authors":"Atta Ullah, Ibrar Ahmad, Adnan Sadiq, Muhammad Usman, Haris Haider, Muhammad Afzal, Khizar Hayat, Abdullah Shah, Zahir Shah, Narcisa Vrinceanu, Said Karim Shah","doi":"10.1007/s40243-025-00336-4","DOIUrl":"10.1007/s40243-025-00336-4","url":null,"abstract":"<div><p>This work presents a comprehensive computational investigation of lead (Pb)-free CsSbCl<sub>4</sub> Dion–Jacobson (DJ)-based perovskite solar cells (PSCs), combining density functional theory (DFT) and Solar Cell Capacitance Simulator (SCAPS 1-D) device simulations. The electronic and optical properties of CsSbCl<sub>4</sub> were evaluated using two different exchange–correlation functionals, PBE-GGA and TB-mBJ. Notably, the band structure displays a direct bandgap of 1.395 eV with TB-mBJ, closely aligned with the Shockley–Queisser (SQ) limit, indicating the material’s suitability for high-performance photovoltaics. Projected density of states (PDOS) analysis revealed Sb s-states dominate the valence band (VB), and Sb 5p-states dominate the conduction band (CB), highlighting the central role of antimony in governing electronic transitions, while absorption spans the electromagnetic spectrum from UV to near IR, with a high absorption coefficient around 10<sup>5</sup> cm<sup>−1</sup>, ensuring efficient light harvesting. To optimize the solar cell architecture, key parameters were systematically tuned using SCAPS 1-D, including the selection of electron transport layer (ETL) and hole transport layer (HTL), absorber layer (AL) thickness, doping concentration (N<sub>A</sub>), and defect density (Nt) were varied to enhance device output. Further, the influence of external conditions like series resistance (Rs), shunt resistance (Rsh), operating temperatures (300–400 K), and solar irradiance on photovoltaic performance was rigorously investigated. After careful optimization, the simulated device achieved a high short-circuit current density (J<sub>SC</sub>) of 30.34 mA/cm<sup>2</sup>, an open-circuit voltage (V<sub>OC</sub>) of 1.04 V, a fill factor (FF) of 85.17%, and a power conversion efficiency (PCE) of 26.95%. Altogether, these findings not only underscore the potential of CsSbCl<sub>4</sub> perovskite as a promising non-toxic Pb-free alternative but also provide a viable route toward the realization of high-efficiency next-generation photovoltaics.</p></div>","PeriodicalId":692,"journal":{"name":"Materials for Renewable and Sustainable Energy","volume":"14 3","pages":""},"PeriodicalIF":5.5,"publicationDate":"2025-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s40243-025-00336-4.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145613003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}