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Electrical characterization and dielectric behavior of PbO·Bi2O3·Ga2O3 glasses PbO·Bi2O3·Ga2O3玻璃的电学特性和介电行为
Pub Date : 2019-08-29 DOI: 10.1063/1.5122424
R. Bala, A. Agarwal, S. Sanghi, Sanjay
In the present work, PbO·Bi2O3·Ga2O3 glasses were synthesized using standard melt-quench technique. The temperature dependent conductivity data of the glasses have been obtained using impedance spectroscopy in the frequency range from 10Hz to 7MHz and in the temperature range from 473K to 703 K. Complex Impedance plots suggest the non-Debye nature of relaxing ions. The dc conductivity follows Arrhenius behavior and decreased with increase in PbO content because of increase of network forming PbO4 units, increases the network dimensionality and blocking the migration of mobile ions.
本文采用标准熔融淬火工艺合成了PbO·Bi2O3·Ga2O3玻璃。在10Hz ~ 7MHz的频率范围和473K ~ 703k的温度范围内,利用阻抗谱法获得了玻璃的温度相关电导率数据。复阻抗图显示了弛豫离子的非德拜性质。直流电导率遵循Arrhenius行为,随着PbO含量的增加而降低,这是由于形成网络的PbO4单元的增加,增加了网络的维数,阻碍了移动离子的迁移。
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引用次数: 3
Measurements of third-order optical nonlinearity using Z-scan technique: A review 用z扫描技术测量三阶光学非线性:综述
Pub Date : 2019-08-29 DOI: 10.1063/1.5122548
Vijender Singh, P. kharangarh, Parveen Kumar, D. Singh, Sanjay, A. Ghosh, Sanjay Kumar
Optical materials exhibiting a large third-order optical nonlinearity are in great demands because of their functional applications in optical limiting, optical switching, optical data storage etc. A well-known single Z-scan technique is employed to determine third-order nonlinear optical properties of nonlinear optical materials. Z-scan is a simple experimental technique to measure intensity dependent nonlinear susceptibilities of third-order nonlinear optical materials. It was originally introduced by Sheik Bahae et.al. In this technique, the sample is translated in the z-direction along the axis of a focused Gaussian beam, and the far field intensity is measured as function of sample position. Consequently, increases and decreases in the maximum intensity incident on the sample produce wavefront distortions created by nonlinear optical effects. This is a simple and sensitive single beam technique to measure the sign and magnitude of both real and imaginary part of the third order nonlinear susceptibility χ(3) of nonlinear optical materials.Optical materials exhibiting a large third-order optical nonlinearity are in great demands because of their functional applications in optical limiting, optical switching, optical data storage etc. A well-known single Z-scan technique is employed to determine third-order nonlinear optical properties of nonlinear optical materials. Z-scan is a simple experimental technique to measure intensity dependent nonlinear susceptibilities of third-order nonlinear optical materials. It was originally introduced by Sheik Bahae et.al. In this technique, the sample is translated in the z-direction along the axis of a focused Gaussian beam, and the far field intensity is measured as function of sample position. Consequently, increases and decreases in the maximum intensity incident on the sample produce wavefront distortions created by nonlinear optical effects. This is a simple and sensitive single beam technique to measure the sign and magnitude of both real and imaginary part of the third order nonlinear susceptibili...
具有较大三阶光非线性的光学材料在光限幅、光开关、光数据存储等方面的应用越来越受到人们的重视。采用一种著名的单z扫描技术来测定非线性光学材料的三阶非线性光学性质。z扫描是一种测量三阶非线性光学材料强度相关非线性磁化率的简单实验技术。它最初是由Sheik Bahae等人介绍的。在这种技术中,样品沿着聚焦高斯光束的轴线在z方向上平移,远场强度作为样品位置的函数被测量。因此,入射到样品上的最大强度的增加和减少会产生非线性光学效应造成的波前畸变。这是一种简单而灵敏的单光束技术,用于测量非线性光学材料的三阶非线性磁化率χ(3)的实部和虚部的符号和大小。具有较大三阶光非线性的光学材料在光限幅、光开关、光数据存储等方面的应用越来越受到人们的重视。采用一种著名的单z扫描技术来测定非线性光学材料的三阶非线性光学性质。z扫描是一种测量三阶非线性光学材料强度相关非线性磁化率的简单实验技术。它最初是由Sheik Bahae等人介绍的。在这种技术中,样品沿着聚焦高斯光束的轴线在z方向上平移,远场强度作为样品位置的函数被测量。因此,入射到样品上的最大强度的增加和减少会产生非线性光学效应造成的波前畸变。这是一种简单而灵敏的单光束技术,用于测量三阶非线性磁化率的实部和虚部的符号和幅度。
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引用次数: 2
Hexaflumuron_β-cyclodextrin inclusion complex as improved pesticide formulation: A NMR case study 六氟脲- β-环糊精包合物改进农药配方:核磁共振案例研究
Pub Date : 2019-08-29 DOI: 10.1063/1.5122626
Bhawna Chaubey, Samanwita Pal
In the present study, we have tried to characterize the inclusion complex of Hexaflumuron (HFM) with β-cyclodextrin (β-CD) using 1H & 19F NMR experiments. HFM is a pesticide (anti-termite) belonging to benzoylphenylurea family that contains three classes of fluorine. Its’ very low aqueous solubility can lead to facile accumulation in water or soil causing rapid poisoning of the environment. Therefore, elimination of HFM requires scavenging agents such as β-CD that can encapsulate HFM resulting in better aqueous solubility. A significant change in 19F and 1H NMR chemical shift, 1H & 19F longitudinal (T1) and 19F transverse relaxation (T2) time was observed for HFM in the presence of CD that confirms HFM-CD association. Jobs Plot demonstrated that β-CD was found to form 2:1 inclusion complex with HFM. Association constant was determined from chemical shift titration method using modified Benesi-Hildebrand plot. The present study for the first time provides an insight in understanding formulation of HFM in β-CD enhancingthe solubility giving rise to a possible soil remediation method.In the present study, we have tried to characterize the inclusion complex of Hexaflumuron (HFM) with β-cyclodextrin (β-CD) using 1H & 19F NMR experiments. HFM is a pesticide (anti-termite) belonging to benzoylphenylurea family that contains three classes of fluorine. Its’ very low aqueous solubility can lead to facile accumulation in water or soil causing rapid poisoning of the environment. Therefore, elimination of HFM requires scavenging agents such as β-CD that can encapsulate HFM resulting in better aqueous solubility. A significant change in 19F and 1H NMR chemical shift, 1H & 19F longitudinal (T1) and 19F transverse relaxation (T2) time was observed for HFM in the presence of CD that confirms HFM-CD association. Jobs Plot demonstrated that β-CD was found to form 2:1 inclusion complex with HFM. Association constant was determined from chemical shift titration method using modified Benesi-Hildebrand plot. The present study for the first time provides an insight in understanding formulation of HFM in β...
在本研究中,我们试图用1H和19F NMR实验来表征六氟脲(HFM)与β-环糊精(β-CD)的包合物。HFM是一种苯甲酰苯脲类杀虫剂(除白蚁),含有三类氟。它的水溶性很低,容易积聚在水或土壤中,导致环境迅速中毒。因此,消除HFM需要清除剂,如β-CD,可以包封HFM,从而获得更好的水溶性。在CD存在的情况下,HFM的19F和1H NMR化学位移、1H和19F纵向(T1)和19F横向弛豫(T2)时间发生了显著变化,证实了HFM与CD的关联。Jobs图表明β-CD与HFM形成2:1的包合物。采用改进的Benesi-Hildebrand图,用化学位移滴定法测定了关联常数。本研究首次提供了对HFM在β-CD中增强溶解度的理解,从而产生了一种可能的土壤修复方法。在本研究中,我们试图用1H和19F NMR实验来表征六氟脲(HFM)与β-环糊精(β-CD)的包合物。HFM是一种苯甲酰苯脲类杀虫剂(除白蚁),含有三类氟。它的水溶性很低,容易积聚在水或土壤中,导致环境迅速中毒。因此,消除HFM需要清除剂,如β-CD,可以包封HFM,从而获得更好的水溶性。在CD存在的情况下,HFM的19F和1H NMR化学位移、1H和19F纵向(T1)和19F横向弛豫(T2)时间发生了显著变化,证实了HFM与CD的关联。Jobs图表明β-CD与HFM形成2:1的包合物。采用改进的Benesi-Hildebrand图,用化学位移滴定法测定了关联常数。本研究首次为理解HFM在β细胞中的形成提供了新的思路。
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引用次数: 1
Assigning effective atomic number and electron density for some lanthanide oxides over wide gamma-rays energies 确定某些镧系氧化物在宽伽马射线能量上的有效原子序数和电子密度
Pub Date : 2019-08-29 DOI: 10.1063/1.5122501
Baljeet Kaur, N. Rani, Yogesh K Vermani, T. Singh
In the present work, we study the interaction of gamma-rays with oxides of lanthanides, namely lanthanum oxide (La2O3) and europium oxide (Eu2O3). Variation of mass attenuation coefficient values with gamma-ray photon energy is calculated using WinXcom software package in the energy range 1 keV to 103 MeV. The total mass attenuation coefficient values are further used to assign the effective atomic number Zeff and the electron density Ne for these lanthanide oxides. The results obtained for effective atomic number are also compared with the experimental data.In the present work, we study the interaction of gamma-rays with oxides of lanthanides, namely lanthanum oxide (La2O3) and europium oxide (Eu2O3). Variation of mass attenuation coefficient values with gamma-ray photon energy is calculated using WinXcom software package in the energy range 1 keV to 103 MeV. The total mass attenuation coefficient values are further used to assign the effective atomic number Zeff and the electron density Ne for these lanthanide oxides. The results obtained for effective atomic number are also compared with the experimental data.
在本工作中,我们研究了伽马射线与镧系元素的氧化物,即氧化镧(La2O3)和氧化铕(Eu2O3)的相互作用。在1 keV ~ 103 MeV能量范围内,利用WinXcom软件包计算了质量衰减系数值随伽玛射线光子能量的变化。利用总质量衰减系数值进一步确定了这些镧系氧化物的有效原子序数Zeff和电子密度Ne。并将所得的有效原子序数与实验数据进行了比较。在本工作中,我们研究了伽马射线与镧系元素的氧化物,即氧化镧(La2O3)和氧化铕(Eu2O3)的相互作用。在1 keV ~ 103 MeV能量范围内,利用WinXcom软件包计算了质量衰减系数值随伽玛射线光子能量的变化。利用总质量衰减系数值进一步确定了这些镧系氧化物的有效原子序数Zeff和电子密度Ne。并将所得的有效原子序数与实验数据进行了比较。
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引用次数: 2
Transport properties of Er3+Ions doped lithium boro bismuth tellurite glasses Er3+离子掺杂硼化铋碲酸锂玻璃的输运性质
Pub Date : 2019-08-29 DOI: 10.1063/1.5122418
B. Eraiah, K. Keshavamurthy
Lithium boro bismuth tellurite glasses doped with Er3+ ions were successfully prepared by conventional melt quenching method and investigated their temperature dependent AC conductivity through impedance analyzer. The frequency dependent AC conductivity has been analyzed using Almond-West type of power law. The conductivity increases with increase of both frequency and temperature. The obtained conductivity values lie in the range of 4.092x10−5 to 3.024x10−5 S/cm. The AC conductivity mechanism can be reasonably inference in terms of correlated barrier hopping (CBH) model.Lithium boro bismuth tellurite glasses doped with Er3+ ions were successfully prepared by conventional melt quenching method and investigated their temperature dependent AC conductivity through impedance analyzer. The frequency dependent AC conductivity has been analyzed using Almond-West type of power law. The conductivity increases with increase of both frequency and temperature. The obtained conductivity values lie in the range of 4.092x10−5 to 3.024x10−5 S/cm. The AC conductivity mechanism can be reasonably inference in terms of correlated barrier hopping (CBH) model.
采用常规熔融淬火法制备了掺Er3+的碲酸锂玻纤玻璃,并通过阻抗分析仪研究了其随温度变化的交流电导率。利用Almond-West型幂律分析了频率相关的交流电导率。电导率随频率和温度的增加而增加。得到的电导率值范围为4.092 × 10−5 ~ 3.024 × 10−5 S/cm。用相关势垒跳变(CBH)模型可以合理地推断交流电导率的机理。采用常规熔融淬火法制备了掺Er3+的碲酸锂玻纤玻璃,并通过阻抗分析仪研究了其随温度变化的交流电导率。利用Almond-West型幂律分析了频率相关的交流电导率。电导率随频率和温度的增加而增加。得到的电导率值范围为4.092 × 10−5 ~ 3.024 × 10−5 S/cm。用相关势垒跳变(CBH)模型可以合理地推断交流电导率的机理。
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引用次数: 0
Investigation of structural, optical and photocatalytic properties of W(0.99)Pd(0.01)O3 nanoparticles W(0.99)Pd(0.01)O3纳米粒子结构、光学和光催化性能研究
Pub Date : 2019-08-29 DOI: 10.1063/1.5122345
Vijay Luxmi, Ashavani Kumar
In the present work, the effective degradation of a commonly used textile dyemethylene blue (MB) in the presence of photocatalyst was investigated under visible light irradation. For this, pd-doped WO3 nanoparticles were synthesized via rapid co-precipitation method. The obtained sample was characterized via powder X-Ray diffractometry for crystallinity analysis and phase structure, SEM for morphological analysis,UV-vis spectroscopy for optical studies. The diffraction peaks obtained from XRD pattern are highly intense that shows crystallinity of the sample (average crystallite size of NPs are ∼33 nm). The efficiency of degradation of the MB dye in the presence of W(0.99) Pd(0.01)O3 photocatalyst was (∼97% in 140 min) with rate constant (∼0.021831 min-1). This shows Pd-doped WO3 has high sensitivity to absorb visible light due to its small band gap (Eg∼2.45 eV).In the present work, the effective degradation of a commonly used textile dyemethylene blue (MB) in the presence of photocatalyst was investigated under visible light irradation. For this, pd-doped WO3 nanoparticles were synthesized via rapid co-precipitation method. The obtained sample was characterized via powder X-Ray diffractometry for crystallinity analysis and phase structure, SEM for morphological analysis,UV-vis spectroscopy for optical studies. The diffraction peaks obtained from XRD pattern are highly intense that shows crystallinity of the sample (average crystallite size of NPs are ∼33 nm). The efficiency of degradation of the MB dye in the presence of W(0.99) Pd(0.01)O3 photocatalyst was (∼97% in 140 min) with rate constant (∼0.021831 min-1). This shows Pd-doped WO3 has high sensitivity to absorb visible light due to its small band gap (Eg∼2.45 eV).
在可见光照射下,研究了在光催化剂的作用下对一种常用的纺织用乙烯蓝(MB)的有效降解。为此,采用快速共沉淀法合成了掺杂pd的WO3纳米颗粒。通过粉末x射线衍射进行结晶度分析和相结构分析,扫描电镜进行形态分析,紫外可见光谱进行光学研究。XRD衍射峰强度高,显示了样品的结晶度(NPs的平均晶粒尺寸为~ 33 nm)。W(0.99) Pd(0.01)O3光催化剂对MB染料的降解效率为(~ 97% in 140 min),速率常数为(~ 0.021831 min-1)。这表明,由于其小带隙(Eg ~ 2.45 eV),掺pd的WO3具有高的可见光吸收灵敏度。在可见光照射下,研究了在光催化剂的作用下对一种常用的纺织用乙烯蓝(MB)的有效降解。为此,采用快速共沉淀法合成了掺杂pd的WO3纳米颗粒。通过粉末x射线衍射进行结晶度分析和相结构分析,扫描电镜进行形态分析,紫外可见光谱进行光学研究。XRD衍射峰强度高,显示了样品的结晶度(NPs的平均晶粒尺寸为~ 33 nm)。W(0.99) Pd(0.01)O3光催化剂对MB染料的降解效率为(~ 97% in 140 min),速率常数为(~ 0.021831 min-1)。这表明,由于其小带隙(Eg ~ 2.45 eV),掺pd的WO3具有高的可见光吸收灵敏度。
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引用次数: 0
Theoretical evaluation of the bioactivity of a plant-derived natural molecule-D-Pinitol and other derived structure 植物源性天然分子-d -蒎醇及其衍生物结构生物活性的理论评价
Pub Date : 2019-08-29 DOI: 10.1063/1.5122568
A. Mishra, S. Tewari
D-Pinitol (C6H12O6) is reportedly a bioactive naturally occurring molecule isolated from the leaves of Anthocephalus chinensis plant whose electronic structure parameters, vibrational and electroni...
D-Pinitol (C6H12O6)是一种从anthocphalus chinensis植物叶片中分离得到的具有生物活性的天然分子。
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引用次数: 2
Estimation of physical and nonlinear optical parameters of vanadate glasses 钒酸盐玻璃物理及非线性光学参数的估计
Pub Date : 2019-08-29 DOI: 10.1063/1.5122378
S. Yadav, S. Kumari, Monika Barala, D. Mohan, R. Dhar, S. Chaudhary
Semiconducting Vanadate (V2O5 based) glass has plentiful application in the field of electrochemical batteries and optical switches. Theoretical investigation for density and molar volume are done for semiconducting glass with composition 60V2O5.(40-x) ZnO.xMoO3 (x=10,13,16,19,22). The density decreases from 4.168-4.057g/cm3 with increasing MoO3 content and an opposite behavior is observed for Molar volume. Using Lorentz- Lorenz equation index of refraction is calculated and found to be very high (4.103 to 3.920) and Oxide ion polarizability varies little in the range 2.6935- 2.6908A3. Using generalized Miller’s rule, third order nonlinear optical susceptibility found to be very high 2.39x10−6 to 1.61x10−6 esu. and Nonlinear Index of Refraction varies from 2.194x10−5 to 1.555x10−5esu.Semiconducting Vanadate (V2O5 based) glass has plentiful application in the field of electrochemical batteries and optical switches. Theoretical investigation for density and molar volume are done for semiconducting glass with composition 60V2O5.(40-x) ZnO.xMoO3 (x=10,13,16,19,22). The density decreases from 4.168-4.057g/cm3 with increasing MoO3 content and an opposite behavior is observed for Molar volume. Using Lorentz- Lorenz equation index of refraction is calculated and found to be very high (4.103 to 3.920) and Oxide ion polarizability varies little in the range 2.6935- 2.6908A3. Using generalized Miller’s rule, third order nonlinear optical susceptibility found to be very high 2.39x10−6 to 1.61x10−6 esu. and Nonlinear Index of Refraction varies from 2.194x10−5 to 1.555x10−5esu.
半导体钒酸盐(V2O5)玻璃在电化学电池和光开关领域有着广泛的应用。对60V2O5.(40-x) ZnO半导体玻璃的密度和摩尔体积进行了理论研究。xMoO3 (x = 10、13、16、19、22)。随着MoO3含量的增加,密度从4.168 ~ 4.057g/cm3下降,而摩尔体积则相反。利用洛伦兹-洛伦兹方程计算了氧化离子的折射率(4.103 ~ 3.920),在2.6935 ~ 2.6908A3范围内,氧化离子的极化率变化不大。利用广义米勒规则,发现三阶非线性光学磁化率非常高,为2.39x10−6 ~ 1.61x10−6 esu。非线性折射率变化范围为2.194x10−5 ~ 1.555x10−5esu。半导体钒酸盐(V2O5)玻璃在电化学电池和光开关领域有着广泛的应用。对60V2O5.(40-x) ZnO半导体玻璃的密度和摩尔体积进行了理论研究。xMoO3 (x = 10、13、16、19、22)。随着MoO3含量的增加,密度从4.168 ~ 4.057g/cm3下降,而摩尔体积则相反。利用洛伦兹-洛伦兹方程计算了氧化离子的折射率(4.103 ~ 3.920),在2.6935 ~ 2.6908A3范围内,氧化离子的极化率变化不大。利用广义米勒规则,发现三阶非线性光学磁化率非常高,为2.39x10−6 ~ 1.61x10−6 esu。非线性折射率变化范围为2.194x10−5 ~ 1.555x10−5esu。
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引用次数: 1
Optical band gap and crystallite size investigations of anticancer drug loaded ZnO nanoparticles 抗癌药物负载ZnO纳米粒子的光学带隙和晶体尺寸研究
Pub Date : 2019-08-29 DOI: 10.1063/1.5122627
Deepak Kumar, Samanwita Pal
The present study aims at the development and characterization of zinc oxide (ZnO) nanoparticles as a carrier for various anti-cancerous drugs viz. 5-Fluorouracil (5-FU), Doxorubicin (DOX) and Daunorubicin (DNR). ZnO nanoparticles were prepared by standard precipitation method. The measurement of optical band gap using UV-Visible Diffuse Reflectance Spectroscopy (DRS) analysis reveals the lowering of ZnO band gap after the drug loading. Crystallite size of free and drug loaded ZnO nanoparticles were determined using X-ray Diffraction (XRD) analysis. The crystallite size of ZnO nanoparticles increases after the drug loading. Both the techniques confirm the adsorption of drug molecules on ZnO surface.The present study aims at the development and characterization of zinc oxide (ZnO) nanoparticles as a carrier for various anti-cancerous drugs viz. 5-Fluorouracil (5-FU), Doxorubicin (DOX) and Daunorubicin (DNR). ZnO nanoparticles were prepared by standard precipitation method. The measurement of optical band gap using UV-Visible Diffuse Reflectance Spectroscopy (DRS) analysis reveals the lowering of ZnO band gap after the drug loading. Crystallite size of free and drug loaded ZnO nanoparticles were determined using X-ray Diffraction (XRD) analysis. The crystallite size of ZnO nanoparticles increases after the drug loading. Both the techniques confirm the adsorption of drug molecules on ZnO surface.
本研究旨在开发和表征氧化锌纳米颗粒作为各种抗癌药物的载体,即5-氟尿嘧啶(5-FU),阿霉素(DOX)和柔红霉素(DNR)。采用标准沉淀法制备ZnO纳米颗粒。利用紫外-可见漫反射光谱(DRS)分析测量了ZnO的带隙,结果表明载药后ZnO的带隙减小。利用x射线衍射(XRD)分析了负载ZnO纳米粒子的晶粒尺寸。载药后ZnO纳米颗粒的晶粒尺寸增大。两种方法都证实了药物分子在ZnO表面的吸附。本研究旨在开发和表征氧化锌纳米颗粒作为各种抗癌药物的载体,即5-氟尿嘧啶(5-FU),阿霉素(DOX)和柔红霉素(DNR)。采用标准沉淀法制备ZnO纳米颗粒。利用紫外-可见漫反射光谱(DRS)分析测量了ZnO的带隙,结果表明载药后ZnO的带隙减小。利用x射线衍射(XRD)分析了负载ZnO纳米粒子的晶粒尺寸。载药后ZnO纳米颗粒的晶粒尺寸增大。两种方法都证实了药物分子在ZnO表面的吸附。
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引用次数: 2
Effect of annealing on the structural and opto-electrical properties of as-grown ZnO thin films by successive ionic layer adsorption and reaction (SILAR) technique 退火对连续离子层吸附和反应(SILAR)技术生长ZnO薄膜结构和光电性能的影响
Pub Date : 2019-08-29 DOI: 10.1063/1.5122337
Kiran, Poonam, A. Ghosh, Sanjay, Vijender Singh
The Zinc oxide thin films were grown on the amorphous glass substrate using Successive Ionic Layer Adsorption and Reaction (SILAR) technique at room temperature. The various preparative parameters were optimized to obtain good quality films. The as-grown films were annealed at 350° C for 2 h in air. The comparative study of the annealed and the as-grown thin films of ZnO were done for structural, optical and electrical studies. Polycrystalline nature was depicted from the x-ray diffraction (XRD) patterns. The peak intensity of as-grown ZnO thin films enhances after annealing. The average grain size calculated from XRD patterns was 17.66 nm for as-grown, while it increased to 24.66 nm after annealing. The band gap of as-grown ZnO thin films was relatively higher and was found to be 3.80 eV. After air annealing, the band gap decrease to 3.58 eV. The current-voltage characteristics show nearly ohmic behavior with decrease in the film resistance, after annealing in air. N-type conductivity was confirmed from the TEP measurements.The Zinc oxide thin films were grown on the amorphous glass substrate using Successive Ionic Layer Adsorption and Reaction (SILAR) technique at room temperature. The various preparative parameters were optimized to obtain good quality films. The as-grown films were annealed at 350° C for 2 h in air. The comparative study of the annealed and the as-grown thin films of ZnO were done for structural, optical and electrical studies. Polycrystalline nature was depicted from the x-ray diffraction (XRD) patterns. The peak intensity of as-grown ZnO thin films enhances after annealing. The average grain size calculated from XRD patterns was 17.66 nm for as-grown, while it increased to 24.66 nm after annealing. The band gap of as-grown ZnO thin films was relatively higher and was found to be 3.80 eV. After air annealing, the band gap decrease to 3.58 eV. The current-voltage characteristics show nearly ohmic behavior with decrease in the film resistance, after annealing in air. N-type conductivity was confirmed from ...
采用连续离子层吸附反应(SILAR)技术,在室温下在非晶玻璃基板上生长氧化锌薄膜。对各种制备参数进行了优化,得到了高质量的薄膜。将生长膜在空气中350℃退火2 h。对ZnO退火薄膜和生长薄膜进行了结构、光学和电学研究。从x射线衍射(XRD)图中描绘了多晶性质。退火后生长ZnO薄膜的峰值强度增强。XRD谱图计算出的平均晶粒尺寸为17.66 nm,退火后增大到24.66 nm。生长ZnO薄膜的带隙相对较高,为3.80 eV。空气退火后,带隙减小到3.58 eV。在空气中退火后,随着薄膜电阻的减小,薄膜的电流-电压特性呈现出接近欧姆的特性。通过TEP的测量证实了n型电导率。采用连续离子层吸附反应(SILAR)技术,在室温下在非晶玻璃基板上生长氧化锌薄膜。对各种制备参数进行了优化,得到了高质量的薄膜。将生长膜在空气中350℃退火2 h。对ZnO退火薄膜和生长薄膜进行了结构、光学和电学研究。从x射线衍射(XRD)图中描绘了多晶性质。退火后生长ZnO薄膜的峰值强度增强。XRD谱图计算出的平均晶粒尺寸为17.66 nm,退火后增大到24.66 nm。生长ZnO薄膜的带隙相对较高,为3.80 eV。空气退火后,带隙减小到3.58 eV。在空气中退火后,随着薄膜电阻的减小,薄膜的电流-电压特性呈现出接近欧姆的特性。n型电导率由…
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引用次数: 0
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ADVANCES IN BASIC SCIENCE (ICABS 2019)
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