Physiological temperature sensors are essential for accurately tracking body temperature, yet human body temperature sensors with both high precision and linearity have not been widely reported. In this work, a solution-processed, low-voltage TFT-based temperature sensor is developed using LiInSnO4 ionic gate dielectric with ZnO (or SnO2) as semiconductors. Alongside excellent TFT performance, the devices exhibit high precision and sensitivity of 0.7 µA °C−1 during heating and 0.6 µA °C−1 during cooling for ZnO-based TFT, while SnO2-based TFT shows slightly higher sensitivity with 1.1 µA °C−1 in heating and 1.2 µA °C−1 in cooling. Additionally, the voltage sensitivity remains consistent at 0.01 V °C−1 for both TFTs under all conditions. Furthermore, the devices demonstrate high linearity in temperature coefficient of current (TCC) and temperature coefficient of voltage (TCV) curves, confirming their capability for accurate temperature measurement.
{"title":"Low Operating Voltage Metal-Oxide Thin-Film Transistor for Portable Physiological Temperature Sensing","authors":"Rajarshi Chakraborty, Chetan Singh, Subarna Pramanik, Pushpendra Prakash Maurya, Sobhan Hazra, Harendra Singh Chauhan, Bhola Nath Pal","doi":"10.1002/admt.202501636","DOIUrl":"https://doi.org/10.1002/admt.202501636","url":null,"abstract":"<p>Physiological temperature sensors are essential for accurately tracking body temperature, yet human body temperature sensors with both high precision and linearity have not been widely reported. In this work, a solution-processed, low-voltage TFT-based temperature sensor is developed using LiInSnO<sub>4</sub> ionic gate dielectric with ZnO (or SnO<sub>2</sub>) as semiconductors. Alongside excellent TFT performance, the devices exhibit high precision and sensitivity of 0.7 µA °C<sup>−1</sup> during heating and 0.6 µA °C<sup>−1</sup> during cooling for ZnO-based TFT, while SnO<sub>2</sub>-based TFT shows slightly higher sensitivity with 1.1 µA °C<sup>−1</sup> in heating and 1.2 µA °C<sup>−1</sup> in cooling. Additionally, the voltage sensitivity remains consistent at 0.01 V °C<sup>−1</sup> for both TFTs under all conditions. Furthermore, the devices demonstrate high linearity in temperature coefficient of current (TCC) and temperature coefficient of voltage (TCV) curves, confirming their capability for accurate temperature measurement.</p>","PeriodicalId":7292,"journal":{"name":"Advanced Materials Technologies","volume":"11 2","pages":""},"PeriodicalIF":6.4,"publicationDate":"2025-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146083252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Physiological temperature sensors are essential for accurately tracking body temperature, yet human body temperature sensors with both high precision and linearity have not been widely reported. In this work, a solution-processed, low-voltage TFT-based temperature sensor is developed using LiInSnO4 ionic gate dielectric with ZnO (or SnO2) as semiconductors. Alongside excellent TFT performance, the devices exhibit high precision and sensitivity of 0.7 µA °C−1 during heating and 0.6 µA °C−1 during cooling for ZnO-based TFT, while SnO2-based TFT shows slightly higher sensitivity with 1.1 µA °C−1 in heating and 1.2 µA °C−1 in cooling. Additionally, the voltage sensitivity remains consistent at 0.01 V °C−1 for both TFTs under all conditions. Furthermore, the devices demonstrate high linearity in temperature coefficient of current (TCC) and temperature coefficient of voltage (TCV) curves, confirming their capability for accurate temperature measurement.
{"title":"Low Operating Voltage Metal-Oxide Thin-Film Transistor for Portable Physiological Temperature Sensing","authors":"Rajarshi Chakraborty, Chetan Singh, Subarna Pramanik, Pushpendra Prakash Maurya, Sobhan Hazra, Harendra Singh Chauhan, Bhola Nath Pal","doi":"10.1002/admt.202501636","DOIUrl":"10.1002/admt.202501636","url":null,"abstract":"<p>Physiological temperature sensors are essential for accurately tracking body temperature, yet human body temperature sensors with both high precision and linearity have not been widely reported. In this work, a solution-processed, low-voltage TFT-based temperature sensor is developed using LiInSnO<sub>4</sub> ionic gate dielectric with ZnO (or SnO<sub>2</sub>) as semiconductors. Alongside excellent TFT performance, the devices exhibit high precision and sensitivity of 0.7 µA °C<sup>−1</sup> during heating and 0.6 µA °C<sup>−1</sup> during cooling for ZnO-based TFT, while SnO<sub>2</sub>-based TFT shows slightly higher sensitivity with 1.1 µA °C<sup>−1</sup> in heating and 1.2 µA °C<sup>−1</sup> in cooling. Additionally, the voltage sensitivity remains consistent at 0.01 V °C<sup>−1</sup> for both TFTs under all conditions. Furthermore, the devices demonstrate high linearity in temperature coefficient of current (TCC) and temperature coefficient of voltage (TCV) curves, confirming their capability for accurate temperature measurement.</p>","PeriodicalId":7292,"journal":{"name":"Advanced Materials Technologies","volume":"11 2","pages":""},"PeriodicalIF":6.4,"publicationDate":"2025-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146083313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Inorganic oxide-based perovskites are recognized as efficient switching materials due to their oxygen anionic conduction, high dielectric constant, and ambient stability. However, their rigid crystal structure limits use in flexible electronics. This study presents a fully flexible crossbar memristor array using hybrid ink of inorganic BaTiO3 (BTO) nanoparticles and organic polymer polyvinyl alcohol (PVA) in a 1:15 wt% ratio. The 6 × 6 memristor array was fabricated on indium tin oxide (ITO)-coated polyethylene terephthalate substrate, where the ITO bottom electrode was patterned by photolithography, followed by screen printing of the BTO–PVA layer and nickel top electrode deposition via sputtering. The devices showed stable bipolar resistive switching with low SET/RESET voltages (1.70 V/–1.75 V), high ON/OFF ratio (~10⁴), excellent endurance (〉10⁶ s), and minimal variability. Mechanical robustness was tested by bending to radii of 19.1 mm, 9.5 mm, and 6.4 mm; ON/OFF ratio stayed ~10⁴, SET/RESET voltages shifted ≤26%, with slight current-noise increase (maximum standard deviation of 1.29 at 〈0.3 V). Switching was trap-controlled: BTO provided traps, PVA enabled hopping transport, flexibility, and high resistance states. Conductance-based color mapping of a bent 6 × 6 array confirmed reliable switching, supporting BTO–PVA hybrid ink as a robust, flexible memory platform.
{"title":"Fully Flexible Crossbar Memristor Arrays Using BaTiO3–Polyvinyl Alcohol Hybrid Ink","authors":"Anita Khichar, Arnab Hazra","doi":"10.1002/admt.202501465","DOIUrl":"10.1002/admt.202501465","url":null,"abstract":"<p>Inorganic oxide-based perovskites are recognized as efficient switching materials due to their oxygen anionic conduction, high dielectric constant, and ambient stability. However, their rigid crystal structure limits use in flexible electronics. This study presents a fully flexible crossbar memristor array using hybrid ink of inorganic BaTiO<sub>3</sub> (BTO) nanoparticles and organic polymer polyvinyl alcohol (PVA) in a 1:15 wt% ratio. The 6 × 6 memristor array was fabricated on indium tin oxide (ITO)-coated polyethylene terephthalate substrate, where the ITO bottom electrode was patterned by photolithography, followed by screen printing of the BTO–PVA layer and nickel top electrode deposition via sputtering. The devices showed stable bipolar resistive switching with low SET/RESET voltages (1.70 V/–1.75 V), high ON/OFF ratio (~10⁴), excellent endurance (〉10⁶ s), and minimal variability. Mechanical robustness was tested by bending to radii of 19.1 mm, 9.5 mm, and 6.4 mm; ON/OFF ratio stayed ~10⁴, SET/RESET voltages shifted ≤26%, with slight current-noise increase (maximum standard deviation of 1.29 at 〈0.3 V). Switching was trap-controlled: BTO provided traps, PVA enabled hopping transport, flexibility, and high resistance states. Conductance-based color mapping of a bent 6 × 6 array confirmed reliable switching, supporting BTO–PVA hybrid ink as a robust, flexible memory platform.</p>","PeriodicalId":7292,"journal":{"name":"Advanced Materials Technologies","volume":"11 2","pages":""},"PeriodicalIF":6.4,"publicationDate":"2025-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146057761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The geometric appearance of weld is very important for the evaluations of welded joint performance and weld quality during oscillating laser welding (OLW). To represent the characteristics of weld appearance more accurately, the surface reconstruction method is often adopted to obtain the complete geometric appearance of weld. The efficiency of surface reconstruction method is crucial for practical application, especially for processing large-scale point cloud. An improved octree-based surface reconstruction method is proposed to enhance the computational efficiency for complex weld appearance based on the point cloud. The large-scale point cloud of weld which is transformed from numerical simulation of OLW is preprocessed by octree structure to reduce the number of points and the Poisson surface reconstruction (PSR) method is utilized to reconstruct the three-dimensional profile of weld appearance. The reconstruction accuracy is quantified by contrasting the cloud-to-mesh distances between the raw point cloud and the reconstructed mesh model. Furthermore, the reconstruction efficiency and accuracy of the proposed method are compared with those of PSR method and the reconstruction quality of proposed method with octree structure is compared with those of methods with other sampling strategies. The results demonstrate that the reconstruction efficiency of the proposed method is significantly increased with excellent reconstruction accuracy. The improved octree-based surface reconstruction method is of great importance for analyzing weld appearance characteristics and evaluating weld quality.
{"title":"An Improved Octree-Based Surface Reconstruction Method for Weld Appearance with High Efficiency During Oscillating Laser Welding","authors":"Yuewei Ai, Ning Sun, Shibo Han, Ming Zhou","doi":"10.1002/admt.202501090","DOIUrl":"https://doi.org/10.1002/admt.202501090","url":null,"abstract":"<p>The geometric appearance of weld is very important for the evaluations of welded joint performance and weld quality during oscillating laser welding (OLW). To represent the characteristics of weld appearance more accurately, the surface reconstruction method is often adopted to obtain the complete geometric appearance of weld. The efficiency of surface reconstruction method is crucial for practical application, especially for processing large-scale point cloud. An improved octree-based surface reconstruction method is proposed to enhance the computational efficiency for complex weld appearance based on the point cloud. The large-scale point cloud of weld which is transformed from numerical simulation of OLW is preprocessed by octree structure to reduce the number of points and the Poisson surface reconstruction (PSR) method is utilized to reconstruct the three-dimensional profile of weld appearance. The reconstruction accuracy is quantified by contrasting the cloud-to-mesh distances between the raw point cloud and the reconstructed mesh model. Furthermore, the reconstruction efficiency and accuracy of the proposed method are compared with those of PSR method and the reconstruction quality of proposed method with octree structure is compared with those of methods with other sampling strategies. The results demonstrate that the reconstruction efficiency of the proposed method is significantly increased with excellent reconstruction accuracy. The improved octree-based surface reconstruction method is of great importance for analyzing weld appearance characteristics and evaluating weld quality.</p>","PeriodicalId":7292,"journal":{"name":"Advanced Materials Technologies","volume":"11 2","pages":""},"PeriodicalIF":6.4,"publicationDate":"2025-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146057760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In their Research Article (10.1002/admt.202501316), Hamed Arami, Layla Khalifehzadeh, and co-workers report an ultrasensitive wireless capacitive pressure sensor for health monitoring. Using ZnO nanocomposite microstructures, the device achieves a 4.3-fold sensitivity enhancement. A novel wireless setup enables long-range pressure monitoring. In vivo studies demonstrate reliable detection of subtle brain pressure variations.