The interest in zinc oxide (ZnO) has reached saturation; however, some issues remain overlooked. Specifically, activities in spintronics and optoelectronics involving doped ZnO are of particular interest, and the lack of consensus in the results obtained draws attention. Doping with Cu is unique because it has no vacancies in its 3d orbitals, but the presence of a single unoccupied state in the 4 s orbital offers intriguing properties. ZnO is known for its characteristic blue–green emission, but over the decades, there has been a significant shift towards more intense yellow–orange bands. Typically, ZnO emits blue–green spectra due to its large bandgap; however, a clear shift towards more intense spectral features requires explanation. The deconvoluted spectra of photoluminescence (PL) clearly reveal this characteristic, highlighting Cu's effect on the local electronic environment of Zn. To investigate the impact of Cu doping on the local electronic structures, X-ray absorption near-edge spectroscopy (XANES) was performed at the K-edge for both the transition element in the nanocrystalline powdered samples of Cu-doped ZnO (ZCO). The local electronic structures were modelled theoretically using Fourier-transformed extended X-ray absorption fine structures (FT-EXAFS) based on the XANES data. The EXAFS simulation achieved excellent agreement up to two shells of the Brillouin zone, confirming the substitutional effect of Cu and providing deeper insight into the local coordination geometry of ligand formation. Defects play a crucial role in determining and shifting emission bands in the visible spectrum, explicitly observed through oxygen vacancies (VO). The correlation between different oxidation states of Cu significantly influences the percolation of defect formation, which could be crucial for understanding the desired emission bands.