Pub Date : 2024-03-14DOI: 10.1134/s1063785023900790
V. V. Lebedev, V. M. Petrov, I. V. Ilichev, P. M. Agruzov, A. V. Shamrai
Abstract
A broadband quantum noise source based on detection of shot noise of a balanced photodetector is demonstrated. Precise electro-optical tuning of the balanced photodetector circuit was carried out by an integrated optical beam splitter constructed in the form of the dual output Mach–Zehnder interferometer on a lithium niobate substrate. The classical component of the detected noise related to the relative intensity noise of a laser diode was suppressed by more than 15 dB. At the maximum laser power of 100 mW, the power spectral density of detected shot noise was 12 dB higher than the level of technical noise of the measuring system in the frequency band above 3 GHz.
{"title":"Quantum Noise Source Based on Shot Noise of a Balanced Photodetector with a Tunable Integrated Optical Beam Splitter","authors":"V. V. Lebedev, V. M. Petrov, I. V. Ilichev, P. M. Agruzov, A. V. Shamrai","doi":"10.1134/s1063785023900790","DOIUrl":"https://doi.org/10.1134/s1063785023900790","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A broadband quantum noise source based on detection of shot noise of a balanced photodetector is demonstrated. Precise electro-optical tuning of the balanced photodetector circuit was carried out by an integrated optical beam splitter constructed in the form of the dual output Mach–Zehnder interferometer on a lithium niobate substrate. The classical component of the detected noise related to the relative intensity noise of a laser diode was suppressed by more than 15 dB. At the maximum laser power of 100 mW, the power spectral density of detected shot noise was 12 dB higher than the level of technical noise of the measuring system in the frequency band above 3 GHz.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140155536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s1063785023900820
A. V. Marchenko, E. I. Terukov, F. S. Nasredinov, Yu. A. Petrushin, P. P. Seregin
Abstract
Using Messbauer spectroscopy on 119Sn impurity atoms, it was demonstrated that in amorphous (GeTe)x(Sb2Te3) films (where x = 0.5, 1, 2, 3) tin atoms replace atoms of tetravalent germanium, which forms a tetrahedral system of chemical bonds with atoms in its local environment. In crystalline films, tin replaces divalent six-coordinated germanium in positions 4b of the NaCl-type crystal lattice.
{"title":"Nature of the Local Environment of Germany Atoms in Amorphous Films (GeTe)x(Sb2Te3)","authors":"A. V. Marchenko, E. I. Terukov, F. S. Nasredinov, Yu. A. Petrushin, P. P. Seregin","doi":"10.1134/s1063785023900820","DOIUrl":"https://doi.org/10.1134/s1063785023900820","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Using Messbauer spectroscopy on <sup>119</sup>Sn impurity atoms, it was demonstrated that in amorphous (GeTe)<sub><i>x</i></sub>(Sb<sub>2</sub>Te<sub>3</sub>) films (where <i>x</i> = 0.5, 1, 2, 3) tin atoms replace atoms of tetravalent germanium, which forms a tetrahedral system of chemical bonds with atoms in its local environment. In crystalline films, tin replaces divalent six-coordinated germanium in positions 4<i>b</i> of the NaCl-type crystal lattice.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140155539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s1063785023010121
P. A. Dementev, E. V. Dementeva, M. N. Lapushkin, D. A. Smirnov, S. N. Timoshnev
Abstract
The electronic structure of a gold film deposited on W was studied during the adsorption of sodium atoms. An analysis of the photoemission spectra from the valence band and core levels of Au 4f and Na 2p upon synchrotron excitation in the photon energy range of 80–600 eV showed that Na adsorption leads to the formation of NaxAuy intermetallic compounds of various stoichiometry under the Na monolayer.
摘要 研究了沉积在 W 上的金薄膜在吸附钠原子时的电子结构。在 80-600 eV 的光子能量范围内，通过分析同步辐射激发下 Au 4f 和 Na 2p 的价带和核级的光发射光谱，发现 Na 的吸附导致在 Na 单层下形成了不同化学计量的 NaxAuy 金属间化合物。
{"title":"Effect of Sodium Atom Adsorption on the Electronic Structure of a Gold Film","authors":"P. A. Dementev, E. V. Dementeva, M. N. Lapushkin, D. A. Smirnov, S. N. Timoshnev","doi":"10.1134/s1063785023010121","DOIUrl":"https://doi.org/10.1134/s1063785023010121","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The electronic structure of a gold film deposited on W was studied during the adsorption of sodium atoms. An analysis of the photoemission spectra from the valence band and core levels of Au 4<i>f</i> and Na 2<i>p</i> upon synchrotron excitation in the photon energy range of 80–600 eV showed that Na adsorption leads to the formation of Na<sub><i>x</i></sub>Au<sub><i>y</i></sub> intermetallic compounds of various stoichiometry under the Na monolayer.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140155541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s1063785023010297
G. G. Savenkov, A. I. Kozachuk, U. M. Poberezhnaya, V. M. Freiman, G. G. Zegrya
Abstract
The method of determination combustion rate of powdered porous silicon with limited space is presented. The values of the combustion rates of porous silicon are close to the values of the rates of explosives.
摘要 介绍了在有限空间内测定粉末多孔硅燃烧率的方法。多孔硅的燃烧速率值接近炸药的燃烧速率值。
{"title":"Combustion Rate of Powdered Porous Silicon with Limited Space","authors":"G. G. Savenkov, A. I. Kozachuk, U. M. Poberezhnaya, V. M. Freiman, G. G. Zegrya","doi":"10.1134/s1063785023010297","DOIUrl":"https://doi.org/10.1134/s1063785023010297","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The method of determination combustion rate of powdered porous silicon with limited space is presented. The values of the combustion rates of porous silicon are close to the values of the rates of explosives.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140155544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s1063785023900571
G. Yu. Sotnikova, G. A. Gavrilov, A. A. Kapralov, R. S. Passet, E. P. Smirnova
Abstract
Temperature response of a material to an external electric field is the main method for electrocaloric effect study in ferroelectrics. In this work, for 0.65PbFe2/3W1/3O3–0.35PbTiO3 solid solution as a model object, it is shown that with an increase in the electric field strength, current fomentation effect can occur. It leads to formation of local regions of increased conductivity in the sample. The associated thermal effect have short characteristic times, due to the small volume of the filament. They are comparable to the times of the electrocaloric response of the material, and can lead to significant errors in the detection of the electrocaloric effect.
{"title":"Temperature Response Features of Ferroelectric Ceramics in Electrocaloric Effect Study","authors":"G. Yu. Sotnikova, G. A. Gavrilov, A. A. Kapralov, R. S. Passet, E. P. Smirnova","doi":"10.1134/s1063785023900571","DOIUrl":"https://doi.org/10.1134/s1063785023900571","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Temperature response of a material to an external electric field is the main method for electrocaloric effect study in ferroelectrics. In this work, for 0.65PbFe<sub>2/3</sub>W<sub>1/3</sub>O<sub>3</sub>–0.35PbTiO<sub>3</sub> solid solution as a model object, it is shown that with an increase in the electric field strength, current fomentation effect can occur. It leads to formation of local regions of increased conductivity in the sample. The associated thermal effect have short characteristic times, due to the small volume of the filament. They are comparable to the times of the electrocaloric response of the material, and can lead to significant errors in the detection of the electrocaloric effect.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s1063785023900583
S. I. Stepanov, A. I. Pechnikov, M. P. Scheglov, A. V. Chikiryaka, V. I. Nikolaev
Abstract
High crystalline quality epitaxial films of orthorhombic gallium oxide ε(κ)-Ga2O3 with a thickness of more 20 μm have been grown for the first time using halide vapor phase epitaxy. Sapphire wafers with preliminarily deposited GaN layers were used as substrates. The properties of the produced films are studied by X-ray diffraction and electron microscopy. The results are considered an important step towards obtaining thick layers and quasi-bulk ε(κ)-Ga2O3 crystals for practical applications in electronics and sensor technology.
摘要 利用卤化物气相外延技术首次生长出厚度超过 20 μm 的正交氧化镓ε(κ)-Ga2O3 高结晶质量外延薄膜。基片使用了初步沉积了 GaN 层的蓝宝石晶片。通过 X 射线衍射和电子显微镜研究了所制备薄膜的特性。这些结果被认为是获得厚层和准大体积ε(κ)-Ga2O3晶体的重要一步，可用于电子和传感器技术的实际应用。
{"title":"Growth of Thick ε(κ)-Ga2O3 Films by Halide Vapor Phase Epitaxy","authors":"S. I. Stepanov, A. I. Pechnikov, M. P. Scheglov, A. V. Chikiryaka, V. I. Nikolaev","doi":"10.1134/s1063785023900583","DOIUrl":"https://doi.org/10.1134/s1063785023900583","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">\u0000<b>Abstract</b>\u0000</h3><p>High crystalline quality epitaxial films of orthorhombic gallium oxide ε(κ)-Ga<sub>2</sub>O<sub>3</sub> with a thickness of more 20 μm have been grown for the first time using halide vapor phase epitaxy. Sapphire wafers with preliminarily deposited GaN layers were used as substrates. The properties of the produced films are studied by X-ray diffraction and electron microscopy. The results are considered an important step towards obtaining thick layers and quasi-bulk ε<b>(</b>κ)-Ga<sub>2</sub>O<sub>3</sub> crystals for practical applications in electronics and sensor technology.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s1063785023010091
F. G. Baksht, V. F. Lapshin
Abstract
Simulation of the pulse-periodic high pressure cesium discharge is performed on the basis of equations of radiative gas dynamics. It is shown that in the discharge it is possible to implement two different types of structure of the plasma channel. At the beginning of the current pulse, the plasma discharge channel has a centered structure. At the same time, most of the plasma is concentrated near the discharge axis. The concentration of charged particles decreases along the radius. Then, if the current amplitude is large enough, during the plasma heating process, a transformation from the centered to the shell structure of the channel occurs. In this case, most of the plasma is concentrated on the periphery of the discharge and its concentration increases along the radius from the axis to the walls of the tube. It is shown that the transition from one channel structure to another occurs at a time when the specific heat capacity of the plasma near the axis reaches a deep minimum corresponding to a completely single ionized e–i-plasma.
{"title":"Two Types of Plasma Channel Structure in High Pressure Pulse Discharge in Cesium","authors":"F. G. Baksht, V. F. Lapshin","doi":"10.1134/s1063785023010091","DOIUrl":"https://doi.org/10.1134/s1063785023010091","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Simulation of the pulse-periodic high pressure cesium discharge is performed on the basis of equations of radiative gas dynamics. It is shown that in the discharge it is possible to implement two different types of structure of the plasma channel. At the beginning of the current pulse, the plasma discharge channel has a centered structure. At the same time, most of the plasma is concentrated near the discharge axis. The concentration of charged particles decreases along the radius. Then, if the current amplitude is large enough, during the plasma heating process, a transformation from the centered to the shell structure of the channel occurs. In this case, most of the plasma is concentrated on the periphery of the discharge and its concentration increases along the radius from the axis to the walls of the tube. It is shown that the transition from one channel structure to another occurs at a time when the specific heat capacity of the plasma near the axis reaches a deep minimum corresponding to a completely single ionized <i>e</i>–<i>i</i>-plasma.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140155538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s1063785023010285
A. S. Payusov, M. I. Mitrofanov, G. O. Kornyshov, A. A. Serin, G. V. Voznyuk, M. M. Kulagina, V. P. Evtikhiev, N. Yu. Gordeev, M. V. Maximov, S. Breuer
Abstract
We studied the influence of the focused ion beam milling of ridge waveguides on lasing parameters of edge-emitting lasers, based on a separate confinement double heterostructure. It is shown that there are three degrees of influence, according to the etching depth: modification of the waveguide properties only, a decrease in efficiency without changing the threshold current, and a simultaneous deterioration in the threshold current and efficiency with significant modification of the optical characteristics of the laser.
{"title":"Focused Ion Beam Milling of Ridge Waveguides of Edge-Emitting Semiconductor Lasers","authors":"A. S. Payusov, M. I. Mitrofanov, G. O. Kornyshov, A. A. Serin, G. V. Voznyuk, M. M. Kulagina, V. P. Evtikhiev, N. Yu. Gordeev, M. V. Maximov, S. Breuer","doi":"10.1134/s1063785023010285","DOIUrl":"https://doi.org/10.1134/s1063785023010285","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>We studied the influence of the focused ion beam milling of ridge waveguides on lasing parameters of edge-emitting lasers, based on a separate confinement double heterostructure. It is shown that there are three degrees of influence, according to the etching depth: modification of the waveguide properties only, a decrease in efficiency without changing the threshold current, and a simultaneous deterioration in the threshold current and efficiency with significant modification of the optical characteristics of the laser.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s106378502390087x
S. O. Slipchenko, A. A. Podoskin, P. S. Gavrina, Yu. K. Kirichenko, N. V. Shuvalova, N. A. Rudova, V. A. Kapitonov, A. Yu. Leshko, I. V. Shushkanov, V. V. Zolotarev, V. A. Kryuchkov, N. A. Pikhtin, T. A. Bagaev, I. V. Yarotskaya, V. N. Svetogorov, Yu. L. Ryaboshtan, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov
Abstract
Current switches based on low-voltage InP heterothyristors with a maximum blocking voltage of 20 V were developed and studied. In current pulse generation mode, the efficient operation of InP heterothyristors with a low-resistance load in the form of a capacitor was demonstrated. It has been shown that the minimum turn-on delay time is about 6 ns at a control current amplitude of 60 mA. The possibility of generating current pulses with a duration of 53–154 ns and amplitudes of 38–130 A was demonstrated when the capacitor values were changed in the range of 56–1000 nF.
摘要 开发并研究了基于低压 InP 异型晶闸管的电流开关，其最大阻断电压为 20 V。在电流脉冲发生模式下，InP 异型晶闸管与电容器形式的低电阻负载一起高效运行。研究表明，在控制电流振幅为 60 mA 时，最短接通延迟时间约为 6 ns。当电容值在 56-1000 nF 范围内变化时，可以产生持续时间为 53-154 ns、振幅为 38-130 A 的电流脉冲。
{"title":"Low-Voltage InP Heterostyristors for 50–150 ns Current Pulses Generation","authors":"S. O. Slipchenko, A. A. Podoskin, P. S. Gavrina, Yu. K. Kirichenko, N. V. Shuvalova, N. A. Rudova, V. A. Kapitonov, A. Yu. Leshko, I. V. Shushkanov, V. V. Zolotarev, V. A. Kryuchkov, N. A. Pikhtin, T. A. Bagaev, I. V. Yarotskaya, V. N. Svetogorov, Yu. L. Ryaboshtan, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov","doi":"10.1134/s106378502390087x","DOIUrl":"https://doi.org/10.1134/s106378502390087x","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Current switches based on low-voltage InP heterothyristors with a maximum blocking voltage of 20 V were developed and studied. In current pulse generation mode, the efficient operation of InP heterothyristors with a low-resistance load in the form of a capacitor was demonstrated. It has been shown that the minimum turn-on delay time is about 6 ns at a control current amplitude of 60 mA. The possibility of generating current pulses with a duration of 53–154 ns and amplitudes of 38–130 A was demonstrated when the capacitor values were changed in the range of 56–1000 nF.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s1063785023900832
M. V. Maximov, Yu. M. Shernyakov, N. Yu. Gordeev, A. M. Nadtochiy, A. E. Zhukov
Abstract
We propose an approach for encoding and transmitting information based on the use of a quantum dot laser, which, depending on the injection current, emits either one of two or simultaneously two spectral components, with different wavelengths. When the laser is modulated by current, each lasing line is detected by an independent photodiode, and thus the information is encoded by both the intensity of each line and its wavelength.
{"title":"Information Encoding Using Two-Level Generation in a Quantum Dot Laser","authors":"M. V. Maximov, Yu. M. Shernyakov, N. Yu. Gordeev, A. M. Nadtochiy, A. E. Zhukov","doi":"10.1134/s1063785023900832","DOIUrl":"https://doi.org/10.1134/s1063785023900832","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>We propose an approach for encoding and transmitting information based on the use of a quantum dot laser, which, depending on the injection current, emits either one of two or simultaneously two spectral components, with different wavelengths. When the laser is modulated by current, each lasing line is detected by an independent photodiode, and thus the information is encoded by both the intensity of each line and its wavelength.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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