Pub Date : 2024-08-29DOI: 10.1134/s1063785023170133
A. A. Koryakin, Yu. A. Eremeev, S. V. Fedina, V. V. Fedorov
Abstract—The growth mechanism of monolayer on the top facet of Ga-catalyzed GaAs and GaP nanowires is investigated. Within the framework of a theoretical model, the maximal monolayer coverage due to the material in the catalyst droplet, the nanowire growth rate and the content of group V atoms in the droplet are found depending on the growth conditions. The estimates of the phosphorus re-evaporation coefficient from neighboring nanowires and substrate are obtained by comparing the theoretical and experimental growth rate of Ga-catalyzed GaP nanowires.
摘要 研究了镓催化砷化镓和磷化镓纳米线顶面单层的生长机理。在理论模型的框架内,发现了催化剂液滴中材料导致的最大单层覆盖率、纳米线生长速率以及液滴中 V 族原子的含量取决于生长条件。通过比较镓催化 GaP 纳米线的理论生长率和实验生长率,得到了邻近纳米线和基底磷再蒸发系数的估计值。
{"title":"Growth Mechanism of Monolayer on the Top Facet of Ga-Catalyzed GaAs and GaP Nanowires","authors":"A. A. Koryakin, Yu. A. Eremeev, S. V. Fedina, V. V. Fedorov","doi":"10.1134/s1063785023170133","DOIUrl":"https://doi.org/10.1134/s1063785023170133","url":null,"abstract":"<p><b>Abstract</b>—The growth mechanism of monolayer on the top facet of Ga-catalyzed GaAs and GaP nanowires is investigated. Within the framework of a theoretical model, the maximal monolayer coverage due to the material in the catalyst droplet, the nanowire growth rate and the content of group V atoms in the droplet are found depending on the growth conditions. The estimates of the phosphorus re-evaporation coefficient from neighboring nanowires and substrate are obtained by comparing the theoretical and experimental growth rate of Ga-catalyzed GaP nanowires.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"154 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142179540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-29DOI: 10.1134/s1063785023180037
V. V. Bolotov, E. V. Knyazev, S. N. Nesov
Abstract
The functionalization of multi-walled carbon nanotubes in He:O plasma is investigated. It is shown that plasma treatment leads to the removal of defective outer graphene layers and their fragments due to oxidation. It is established that the surface of functionalized multi-walled carbon nanotubes contains numerous uncoordinated carbon atoms and oxygen-containing functional groups. The preservation of the structure of the internal graphene layers of nanotubes and the formation of broken chemical bonds ensure a decrease in electrical resistance. At the same time, there is a narrowing of the distribution of electrical resistance values of nanotube ensembles.
{"title":"The Effect of He:O Plasma Treatment on the Structure of Multi-Walled Carbon Nanotubes","authors":"V. V. Bolotov, E. V. Knyazev, S. N. Nesov","doi":"10.1134/s1063785023180037","DOIUrl":"https://doi.org/10.1134/s1063785023180037","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The functionalization of multi-walled carbon nanotubes in He:O plasma is investigated. It is shown that plasma treatment leads to the removal of defective outer graphene layers and their fragments due to oxidation. It is established that the surface of functionalized multi-walled carbon nanotubes contains numerous uncoordinated carbon atoms and oxygen-containing functional groups. The preservation of the structure of the internal graphene layers of nanotubes and the formation of broken chemical bonds ensure a decrease in electrical resistance. At the same time, there is a narrowing of the distribution of electrical resistance values of nanotube ensembles.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"72 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142179513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-29DOI: 10.1134/s1063785023180050
D. A. Kiselev, A. V. Pavlenko, S. P. Zinchenko
Abstract
The properties of c-oriented thin films of Sr0.5Ba0.5Nb2O6 grown on a Si(001) (p-type) substrate with a pre-deposited Ba0.2Sr0.8TiO3 layer were studied using scanning probe microscopy and dielectric spectroscopy. It is established that the Sr0.5Ba0.5Nb2O6 films are characterized by low surface roughness (less than 6 nm) and average crystallite size of ~93 nm. It is shown that there is spontaneous polarization in the film directed from its surface to the substrate, which causes the manifestation of the field effect for the case of the Si substrate with p-type conductivity without the external field effect. Differences in the magnitudes of the surface potential signal for regions polarized by an external electric field of different polarities (+10 and –10 V), as well as in their relaxation to the initial state, are revealed. The reasons for the established patterns are discussed.
摘要 使用扫描探针显微镜和介电光谱法研究了在带有预沉积 Ba0.2Sr0.8TiO3 层的 Si(001)(p 型)基底上生长的 Sr0.5Ba0.5Nb2O6 c 型薄膜的特性。结果表明,Sr0.5Ba0.5Nb2O6 薄膜表面粗糙度低(小于 6 纳米),平均结晶尺寸约为 93 纳米。研究表明,薄膜中存在从其表面指向基底的自发极化,这导致了在硅基底具有 p 型导电性而没有外部场效应的情况下的场效应。在不同极性(+10 V 和 -10 V)的外部电场作用下,极化区域的表面电势信号大小不同,其弛豫到初始状态的过程也不同。本文讨论了形成这些模式的原因。
{"title":"Ferroelectric Properties of Heterostructure Sr0.5Ba0.5Nb2O6/Ba0.2Sr0.8TiO3/Si(001)","authors":"D. A. Kiselev, A. V. Pavlenko, S. P. Zinchenko","doi":"10.1134/s1063785023180050","DOIUrl":"https://doi.org/10.1134/s1063785023180050","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The properties of <b><i>c</i></b>-oriented thin films of Sr<sub>0.5</sub>Ba<sub>0.5</sub>Nb<sub>2</sub>O<sub>6</sub> grown on a Si(001) (<i>p</i>-type) substrate with a pre-deposited Ba<sub>0.2</sub>Sr<sub>0.8</sub>TiO<sub>3</sub> layer were studied using scanning probe microscopy and dielectric spectroscopy. It is established that the Sr<sub>0.5</sub>Ba<sub>0.5</sub>Nb<sub>2</sub>O<sub>6</sub> films are characterized by low surface roughness (less than 6 nm) and average crystallite size of ~93 nm. It is shown that there is spontaneous polarization in the film directed from its surface to the substrate, which causes the manifestation of the field effect for the case of the Si substrate with <i>p</i>-type conductivity without the external field effect. Differences in the magnitudes of the surface potential signal for regions polarized by an external electric field of different polarities (+10 and –10 V), as well as in their relaxation to the initial state, are revealed. The reasons for the established patterns are discussed.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"48 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142179515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-29DOI: 10.1134/s106378502317011x
N. S. Knyazev, A. I. Malkin, V. A. Chechetkin
Abstract—An experimental method was developed to determine losses in microstrip and coplanar transmission lines for devices operating in the frequency range of 77–81 GHz. The parameters of the scattering matrices are obtained using a vector network analyzer and frequency upconverters. The calculation of losses in waveguide-coplanar and coplanar-microstrip adapters is made.
{"title":"Losses Measurement Method for Transmission Lines at mmWave","authors":"N. S. Knyazev, A. I. Malkin, V. A. Chechetkin","doi":"10.1134/s106378502317011x","DOIUrl":"https://doi.org/10.1134/s106378502317011x","url":null,"abstract":"<p><b>Abstract</b>—An experimental method was developed to determine losses in microstrip and coplanar transmission lines for devices operating in the frequency range of 77–81 GHz. The parameters of the scattering matrices are obtained using a vector network analyzer and frequency upconverters. The calculation of losses in waveguide-coplanar and coplanar-microstrip adapters is made.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"16 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142179566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-29DOI: 10.1134/s1063785023180104
A. S. Lobasov, A. V. Minakov
Abstract
The results of numerical investigation of the hydrodynamic drag of a slit microchannel with a textured wall surface, as well as of the pressure drop in such a channel and the effective slip length on the wall for various Reynolds numbers, are presented. The channel height was 10 μm, and the length varied from 25 to 500 μm. It was found that the pressure drop in the textured microchannel was less than in a conventional one at any length. The dependences of the relative pressure drop, friction factor, and effective slip length on the Reynolds number were obtained for various channel lengths. A correlation that describes the dependence of the relative pressure drop on the Reynolds number for small channel lengths was proposed. The friction factor was described by a correlation expressed as 20/Re.
{"title":"The Investigation of the Hydrodynamic Drag of a Slit Microchannel with a Textured Wall","authors":"A. S. Lobasov, A. V. Minakov","doi":"10.1134/s1063785023180104","DOIUrl":"https://doi.org/10.1134/s1063785023180104","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The results of numerical investigation of the hydrodynamic drag of a slit microchannel with a textured wall surface, as well as of the pressure drop in such a channel and the effective slip length on the wall for various Reynolds numbers, are presented. The channel height was 10 μm, and the length varied from 25 to 500 μm. It was found that the pressure drop in the textured microchannel was less than in a conventional one at any length. The dependences of the relative pressure drop, friction factor, and effective slip length on the Reynolds number were obtained for various channel lengths. A correlation that describes the dependence of the relative pressure drop on the Reynolds number for small channel lengths was proposed. The friction factor was described by a correlation expressed as 20/Re.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"5 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-29DOI: 10.1134/s1063785023170212
I. P. Shcherbakov, A. G. Kadomtsev, A. E. Chmel
Abstract—Temporal characteristics of the localized damage development initiated by a short-time impact pointed loading of SiC ceramics which is widely applied as a protective material against the shock action upon engineering constructions and people were investigated. The statistics of crack nucleation and relaxation was studied with the methods of acoustic emission and electromagnetic emission, correspondingly. It was shown that the length of intervals between microcrack nucleations follows a power law specific to cooperative phenomena. The time distribution of decaying electric charges which appear on impact-induced crack edges and annihilate after the passage of impact wave was, in contrast, linear. The temporal pattern of the crack relaxation permitted identifying two sets of newly formed damages that are the tiny cracks localized in the grain bulk and those that interconnect grains.
摘要-SiC 陶瓷是一种广泛应用于工程建筑和人体的抗冲击保护材料,本文研究了 SiC 陶瓷在短时间冲击尖角加载下局部损伤发展的时间特征。相应地,采用声发射和电磁发射方法研究了裂纹成核和松弛的统计数据。结果表明,微裂纹成核之间的间隔长度遵循合作现象特有的幂律。相反,冲击引起的裂纹边缘出现的衰减电荷在冲击波通过后湮灭的时间分布是线性的。裂纹弛豫的时间模式允许识别两组新形成的损伤,即晶粒体中的局部微小裂纹和晶粒之间的连接裂纹。
{"title":"Temporal Pattern of Microcracking in Impact–Damaged Porous SiC Ceramics","authors":"I. P. Shcherbakov, A. G. Kadomtsev, A. E. Chmel","doi":"10.1134/s1063785023170212","DOIUrl":"https://doi.org/10.1134/s1063785023170212","url":null,"abstract":"<p><b>Abstract</b>—Temporal characteristics of the localized damage development initiated by a short-time impact pointed loading of SiC ceramics which is widely applied as a protective material against the shock action upon engineering constructions and people were investigated. The statistics of crack nucleation and relaxation was studied with the methods of acoustic emission and electromagnetic emission, correspondingly. It was shown that the length of intervals between microcrack nucleations follows a power law specific to cooperative phenomena. The time distribution of decaying electric charges which appear on impact-induced crack edges and annihilate after the passage of impact wave was, in contrast, linear. The temporal pattern of the crack relaxation permitted identifying two sets of newly formed damages that are the tiny cracks localized in the grain bulk and those that interconnect grains.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"7 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142179497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-29DOI: 10.1134/s1063785023170236
K. V. Zaichenko, B. S. Gurevich
Abstract—Wavelet analysis is one of the most efficient methods of the informative signals characteristics investigation. First shown the possibility of informative signals wavelet processing by means of the acousto-optic processor with time integration. The possibility of the realization of both power spectrum calculation and performance of wavelet transform of bioelectric signals in the real time mode has been proved. The analysis is listed which describes its operation in different modes.
{"title":"Acousto-Optic Wavelet Processing of Bioelectric Signals","authors":"K. V. Zaichenko, B. S. Gurevich","doi":"10.1134/s1063785023170236","DOIUrl":"https://doi.org/10.1134/s1063785023170236","url":null,"abstract":"<p><b>Abstract</b>—Wavelet analysis is one of the most efficient methods of the informative signals characteristics investigation. First shown the possibility of informative signals wavelet processing by means of the acousto-optic processor with time integration. The possibility of the realization of both power spectrum calculation and performance of wavelet transform of bioelectric signals in the real time mode has been proved. The analysis is listed which describes its operation in different modes.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"30 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142179501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-29DOI: 10.1134/s1063785023180025
A. S. Aref’ev
Abstract
The problem of synthesis of the three-link stepped Chebyshev’s microwave filter is reduced to two independent fourth-degree equations, including a single link wave impedance as unknown. The solution of Descartes—Euler is applied to these equations. It is proved that, in case wave impedances of extreme links are equal, the problem of the filter synthesis has two solutions. Identical phase-frequency responses correspond to these solutions. It is proved that for each link a product of the wave impedances relating to these solutions is equal to a square of the wave impedance of the transmission line including the filter.
{"title":"Analytical Solution of the Problem of Synthesis of Three-Link Stepped Chebyshev’s Microwave Filter","authors":"A. S. Aref’ev","doi":"10.1134/s1063785023180025","DOIUrl":"https://doi.org/10.1134/s1063785023180025","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The problem of synthesis of the three-link stepped Chebyshev’s microwave filter is reduced to two independent fourth-degree equations, including a single link wave impedance as unknown. The solution of Descartes—Euler is applied to these equations. It is proved that, in case wave impedances of extreme links are equal, the problem of the filter synthesis has two solutions. Identical phase-frequency responses correspond to these solutions. It is proved that for each link a product of the wave impedances relating to these solutions is equal to a square of the wave impedance of the transmission line including the filter.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"20 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142179514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-29DOI: 10.1134/s1063785023180116
O. I. Moskalenko, A. A. Koronovskii, A. O. Selskii, E. V. Evstifeev
Abstract
A method to define the characteristic phases in the behavior of unidirectionally coupled systems located near the boundary of the generalized chaotic synchronization regime onset based on calculating the probability of the synchronous regime observation in an ensemble of coupled systems is proposed. Using the example of unidirectionally coupled Rössler systems in the band chaos regime, we have shown its efficiency in comparison with other known methods for detecting the characteristics of intermittent generalized synchronization.
{"title":"A Method to Detect the Characteristics of Intermittent Generalized Synchronization Based on Calculation of Probability of the Synchronous Regime Observation","authors":"O. I. Moskalenko, A. A. Koronovskii, A. O. Selskii, E. V. Evstifeev","doi":"10.1134/s1063785023180116","DOIUrl":"https://doi.org/10.1134/s1063785023180116","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A method to define the characteristic phases in the behavior of unidirectionally coupled systems located near the boundary of the generalized chaotic synchronization regime onset based on calculating the probability of the synchronous regime observation in an ensemble of coupled systems is proposed. Using the example of unidirectionally coupled Rössler systems in the band chaos regime, we have shown its efficiency in comparison with other known methods for detecting the characteristics of intermittent generalized synchronization.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"30 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142179520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-29DOI: 10.1134/s1063785023180207
R. R. Zinnatullin, L. A. Kovaleva
Abstract
The degree of influence of the electromagnetic field on oil dispersed systems depends on the dielectric properties of these systems, in particular oil. Dielectric properties of oil depend on the content of high molecular weight polar components: asphaltenes and resins. In this regard, a study was carried out of the dielectric properties of oil in the radio-frequency range, depending on the content of asphalt–resinous substances in it. The obtained results of experimental studies show the correlation of dielectric parameters with the ratio of the content of resins and asphaltenes in oil.
{"title":"Research of Dielectric Properties of Oil Dispersed Systems Depending on the Ratio of Asphalt–Resinous Substances","authors":"R. R. Zinnatullin, L. A. Kovaleva","doi":"10.1134/s1063785023180207","DOIUrl":"https://doi.org/10.1134/s1063785023180207","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The degree of influence of the electromagnetic field on oil dispersed systems depends on the dielectric properties of these systems, in particular oil. Dielectric properties of oil depend on the content of high molecular weight polar components: asphaltenes and resins. In this regard, a study was carried out of the dielectric properties of oil in the radio-frequency range, depending on the content of asphalt–resinous substances in it. The obtained results of experimental studies show the correlation of dielectric parameters with the ratio of the content of resins and asphaltenes in oil.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"16 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142179529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}