Pub Date : 2024-06-03DOI: 10.1134/s1063785024700342
A. A. Serebryakova, V. V. Shlyarov, D. V. Zaguliaev, V. E. Gromov
Abstract
Mechanical tests of commercially pure lead grade C2 were carried out, cylindrical samples of lead were destroyed in the process of creep with a constant tensile force. The tests were carried out initially without the inclusion of a magnetic field during deformation, then with the inclusion of a magnetic field with an induction of 0.5 T. Based on the data obtained, characteristic curves of the creep process were constructed. A change in the nature of the curve is revealed. At the discovered linear stage of the process, the creep rate was calculated. A decrease in the creep rate is shown compared to the process without the action of an external magnetic field. The duration of the creep process is analyzed depending on the induction and the percentage of residual relative elongation of the samples. Analysis of the fractograms showed a difference in the morphology of fractures in the studied samples. With the use of a magnetic field during the destruction of the sample, the number of pits on the surface decreased, the fibrous zone increased, and the fracture morphology changed.
摘要 对商业纯铅 C2 级进行了力学试验，圆柱形铅样品在恒定拉力的蠕变过程中被破坏。试验开始时在变形过程中不加入磁场，然后加入感应为 0.5 T 的磁场。曲线的性质发生了变化。在发现的线性过程阶段，计算了蠕变速率。与没有外部磁场作用的过程相比，蠕变速率有所下降。蠕变过程的持续时间分析取决于磁感应强度和样品的残余相对伸长率。对断裂图的分析表明，所研究样品的断裂形态存在差异。在样品破坏过程中使用磁场，表面凹坑数量减少，纤维区增加，断口形态发生变化。
{"title":"Destruction of Commercially Pure Lead in Process Creep in a Constant Magnetic Field","authors":"A. A. Serebryakova, V. V. Shlyarov, D. V. Zaguliaev, V. E. Gromov","doi":"10.1134/s1063785024700342","DOIUrl":"https://doi.org/10.1134/s1063785024700342","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Mechanical tests of commercially pure lead grade C2 were carried out, cylindrical samples of lead were destroyed in the process of creep with a constant tensile force. The tests were carried out initially without the inclusion of a magnetic field during deformation, then with the inclusion of a magnetic field with an induction of 0.5 T. Based on the data obtained, characteristic curves of the creep process were constructed. A change in the nature of the curve is revealed. At the discovered linear stage of the process, the creep rate was calculated. A decrease in the creep rate is shown compared to the process without the action of an external magnetic field. The duration of the creep process is analyzed depending on the induction and the percentage of residual relative elongation of the samples. Analysis of the fractograms showed a difference in the morphology of fractures in the studied samples. With the use of a magnetic field during the destruction of the sample, the number of pits on the surface decreased, the fibrous zone increased, and the fracture morphology changed.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141252433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-03DOI: 10.1134/s1063785024700330
A. A. Atepalikhin, F. V. Khan, L. V. Filippenko, V. P. Koshelets
Abstract
At present, microwave transmission lines are characterized by a strong frequency dependence of loss in the subterahertz range. This work is aimed at development, research, and optimization of superconducting integrated circuits designed for matching the impedances of a long Josephson junction oscillator (a so-called “flux-flow oscillator”) and a superconductor–insulator–superconductor (SIS) detector in the subterahertz frequency range. The goal of this study is to improve and approve the numerical calculation methods, which make it possible to describe correctly experimental superconducting structures in a wide frequency range. Numerical calculations of integrated circuits have been performed in order to optimize the topology and parameters of transmission lines. The main parameters of the transmission lines and their influence on the signal propagation are determined. The results of optimization of integrated matching circuits in the range of 450–700 GHz have been experimentally confirmed. Optimization and improvement of transmission lines allow one to design new-generation integrated superconducting detectors and investigate tunnel SIS junctions more thoroughly (including shunted ones) and the properties of heterodyne oscillators based on long Josephson junctions.
{"title":"Superconducting Matching Circuits for an Oscillator and an SIS Mixer in the Subterahertz Frequency Range","authors":"A. A. Atepalikhin, F. V. Khan, L. V. Filippenko, V. P. Koshelets","doi":"10.1134/s1063785024700330","DOIUrl":"https://doi.org/10.1134/s1063785024700330","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>At present, microwave transmission lines are characterized by a strong frequency dependence of loss in the subterahertz range. This work is aimed at development, research, and optimization of superconducting integrated circuits designed for matching the impedances of a long Josephson junction oscillator (a so-called “flux-flow oscillator”) and a superconductor–insulator–superconductor (SIS) detector in the subterahertz frequency range. The goal of this study is to improve and approve the numerical calculation methods, which make it possible to describe correctly experimental superconducting structures in a wide frequency range. Numerical calculations of integrated circuits have been performed in order to optimize the topology and parameters of transmission lines. The main parameters of the transmission lines and their influence on the signal propagation are determined. The results of optimization of integrated matching circuits in the range of 450–700 GHz have been experimentally confirmed. Optimization and improvement of transmission lines allow one to design new-generation integrated superconducting detectors and investigate tunnel SIS junctions more thoroughly (including shunted ones) and the properties of heterodyne oscillators based on long Josephson junctions.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141252477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-28DOI: 10.1134/s1063785024700184
V. I. Lad’yanov, M. S. Konovalov, M. I. Mokrushina, A. I. Shilyaev, D. P. Ardasheva
Abstract
Fast-quenched ribbons with thicknesses of 200, 50, 30, and 20 μm have been obtained by melt spinning at hardening disk rotation speeds of 500, 1500, 2500, and 3500 rpm, respectively. The chemical composition of the ribbons has been determined by atomic emission spectroscopy on a Spectroflame Modula S spectrometer. X-ray diffraction patterns of the ribbons have obtained on a DRON-6 diffractometer (CuKα radiation) with a graphite monochromator. The effect of the melt cooling rate on the structural state of the contact and free sides of the Fe77Ni1Si9B13 alloy ribbons has been examined. It has been established that, by increasing the melt cooling rate, one can obtain fast-quenched Fe77Ni1Si9B13 alloy ribbons with different structures: X-ray amorphous at 3500, 2500, and 1500 rpm and crystalline at 500 rpm. Cooling of the melt at a quenching disk rotation speed of 500 rpm makes it possible to obtain Fe77Ni1Si9B13 alloy ribbons with crystallographic structures of three types: A2, C16, and D03 (A2 corresponds to the α-Fe(Si) phase; C16, to the Fe2B phase; and D03, to the Fe3Si phase). In the surface layers on the ribbon free side, texturing of the Fe3Si phase has been detected. It is noted that the crystal structure of the ribbons obtained by melt cooling on a quenching disk at a rotation speed of 500 rpm differs from the structure of the ribbons of this alloy crystallized from the amorphous state by annealing.
{"title":"On the Effect of the Melt Cooling Rate upon Spinning on the Structure of the Surface Layers of Fe77Ni1Si9B13 Alloy Ribbons","authors":"V. I. Lad’yanov, M. S. Konovalov, M. I. Mokrushina, A. I. Shilyaev, D. P. Ardasheva","doi":"10.1134/s1063785024700184","DOIUrl":"https://doi.org/10.1134/s1063785024700184","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Fast-quenched ribbons with thicknesses of 200, 50, 30, and 20 μm have been obtained by melt spinning at hardening disk rotation speeds of 500, 1500, 2500, and 3500 rpm, respectively. The chemical composition of the ribbons has been determined by atomic emission spectroscopy on a Spectroflame Modula S spectrometer. X-ray diffraction patterns of the ribbons have obtained on a DRON-6 diffractometer (Cu<i>K</i>α radiation) with a graphite monochromator. The effect of the melt cooling rate on the structural state of the contact and free sides of the Fe<sub>77</sub>Ni<sub>1</sub>Si<sub>9</sub>B<sub>13</sub> alloy ribbons has been examined. It has been established that, by increasing the melt cooling rate, one can obtain fast-quenched Fe<sub>77</sub>Ni<sub>1</sub>Si<sub>9</sub>B<sub>13</sub> alloy ribbons with different structures: X-ray amorphous at 3500, 2500, and 1500 rpm and crystalline at 500 rpm. Cooling of the melt at a quenching disk rotation speed of 500 rpm makes it possible to obtain Fe<sub>77</sub>Ni<sub>1</sub>Si<sub>9</sub>B<sub>13</sub> alloy ribbons with crystallographic structures of three types: <i>A</i>2, <i>C</i>16, and <i>D</i>0<sub>3</sub> (<i>A</i>2 corresponds to the α-Fe(Si) phase; <i>C</i>16, to the Fe<sub>2</sub>B phase; and <i>D</i>0<sub>3</sub>, to the Fe<sub>3</sub>Si phase). In the surface layers on the ribbon free side, texturing of the Fe<sub>3</sub>Si phase has been detected. It is noted that the crystal structure of the ribbons obtained by melt cooling on a quenching disk at a rotation speed of 500 rpm differs from the structure of the ribbons of this alloy crystallized from the amorphous state by annealing.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140323756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s106378502390056x
E. A. Smirnova, I. A. Chepurnaya
Abstract
For the first time, polymeric forms of the complexes N,N'-bis(salicylidene)ethylenediaminonickel (II) and N,N'-bis(3-methoxysalicylidene)ethylenediaminonickel (II) have been investigated as functional materials for the conducting channels of organic electrochemical transistors. The dependence of the electrical conductivity of the polymers on the electrolyte anion-doping level has been established. The polymer film conductance versus gate voltage curve parameters have been shown to depend on the molecular structure of the complex and the nature of the electrolyte solvent.
{"title":"Gate-Source Voltage Dependence of the Electrical Conductivity of Nickel-Salen Polymers in the Electrochemical Transistor","authors":"E. A. Smirnova, I. A. Chepurnaya","doi":"10.1134/s106378502390056x","DOIUrl":"https://doi.org/10.1134/s106378502390056x","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>For the first time, polymeric forms of the complexes N,N'-bis(salicylidene)ethylenediaminonickel (II) and N,N'-bis(3-methoxysalicylidene)ethylenediaminonickel (II) have been investigated as functional materials for the conducting channels of organic electrochemical transistors. The dependence of the electrical conductivity of the polymers on the electrolyte anion-doping level has been established. The polymer film conductance versus gate voltage curve parameters have been shown to depend on the molecular structure of the complex and the nature of the electrolyte solvent.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s1063785023900741
V. S. Kalinovskii, E. I. Terukov, K. K. Prudchenko, A. A. Bazeley, E. V. Kontrosh, I. A. Tolkachev, A. A. Titov
Abstract
The radiation resistance of different types of heterostructural silicon solar cells under irradiation with 1 MeV electrons in the fluence range 2.5 × 1014–1 × 1015 cm–2 has been studied. Studies have shown that the smallest degradation of the “saturation” currents of the diffusion current flow mechanism from J0d ≤ 5 × 10–13 to J0d ≤ 3 × 10–12 A/cm2 and efficiency from 19.2 to 13.6% (AM0, 1367 W/m2) were n-α-Si:H/c-p(Ga)/p-α-Si:H and n-c-Si:H/c-p(Ga)/p-α-Si:H. The results obtained make it possible to evaluate the prospects for the use of heterostructure silicon solar cells for low-orbit spacecraft.
{"title":"Investigation of Radiation Resistance of Heterostructure Silicon Solar Cells","authors":"V. S. Kalinovskii, E. I. Terukov, K. K. Prudchenko, A. A. Bazeley, E. V. Kontrosh, I. A. Tolkachev, A. A. Titov","doi":"10.1134/s1063785023900741","DOIUrl":"https://doi.org/10.1134/s1063785023900741","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The radiation resistance of different types of heterostructural silicon solar cells under irradiation with 1 MeV electrons in the fluence range 2.5 × 10<sup>14</sup>–1 × 10<sup>15</sup> cm<sup>–2</sup> has been studied. Studies have shown that the smallest degradation of the “saturation” currents of the diffusion current flow mechanism from <i>J</i><sub>0<i>d</i></sub> ≤ 5 × 10<sup>–13</sup> to <i>J</i><sub>0<i>d</i></sub> ≤ 3 × 10<sup>–12</sup> A/cm<sup>2</sup> and efficiency from 19.2 to 13.6% (AM0, 1367 W/m<sup>2</sup>) were <i>n</i>-α-Si:H/<i>c</i>-<i>p</i>(Ga)/<i>p</i>-α-Si:H and <i>n</i>-<i>c-</i>Si:H/<i>c</i>-<i>p</i>(Ga)/<i>p</i>-α-Si:H. The results obtained make it possible to evaluate the prospects for the use of heterostructure silicon solar cells for low-orbit spacecraft.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140155545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s1063785023010339
G. V. Voznyuk, I. N. Grigorenko, M. I. Mitrofanov, V. V. Nikolaev, V. P. Evtikhiev
Abstract
The paper presents a procedure for creating on GaAs(100) substrates textured surfaces by ion-beam etching with a focused beam. The possibility of flexibly controlling the shape and profile of the formed submicron elements of textured media is shown; this will later allow formation of textured surfaces of almost any complexity for realizing the surface radiation coupling from the waveguide. Original lithographic masks were developed, and 3D lithography was accomplished. The obtained lithographic patterns were controlled by the methods of optical, electron and atomic force microscopy.
{"title":"Subwave Textured Surfaces for the Radiation Coupling from the Waveguide","authors":"G. V. Voznyuk, I. N. Grigorenko, M. I. Mitrofanov, V. V. Nikolaev, V. P. Evtikhiev","doi":"10.1134/s1063785023010339","DOIUrl":"https://doi.org/10.1134/s1063785023010339","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The paper presents a procedure for creating on GaAs(100) substrates textured surfaces by ion-beam etching with a focused beam. The possibility of flexibly controlling the shape and profile of the formed submicron elements of textured media is shown; this will later allow formation of textured surfaces of almost any complexity for realizing the surface radiation coupling from the waveguide. Original lithographic masks were developed, and 3D lithography was accomplished. The obtained lithographic patterns were controlled by the methods of optical, electron and atomic force microscopy.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140155398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s1063785023900601
A. K. Vershovskii, M. V. Petrenko
Abstract
A new implementation of the method of optical pumping of alkaline atoms in the scheme of a highly sensitive compact single-beam sensor of a nonzero magnetic field is proposed, which allows it to be used as part of a magnetoencephalographic complex with a remote laser pumping source. The proposed method makes it possible, in particular, to pump an array of sensors with a single source of polarization-modulated resonant radiation connected to sensors by means of polarization-supporting optical fibers. A model experiment has been carried out confirming the principle feasibility and effectiveness of the method.
{"title":"Optical Magnetometric Sensor for Magnetoencephalographic Complexes","authors":"A. K. Vershovskii, M. V. Petrenko","doi":"10.1134/s1063785023900601","DOIUrl":"https://doi.org/10.1134/s1063785023900601","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A new implementation of the method of optical pumping of alkaline atoms in the scheme of a highly sensitive compact single-beam sensor of a nonzero magnetic field is proposed, which allows it to be used as part of a magnetoencephalographic complex with a remote laser pumping source. The proposed method makes it possible, in particular, to pump an array of sensors with a single source of polarization-modulated resonant radiation connected to sensors by means of polarization-supporting optical fibers. A model experiment has been carried out confirming the principle feasibility and effectiveness of the method.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s1063785023900856
A. V. Osipov, Sh. Sh. Sharofidinov, A. V. Kremleva, E. V. Osipova, A. M. Smirnov, S. A. Kukushkin
Abstract
The three main crystalline modifications of Ga2O3, namely α-phase, ε-phase, and β-phase were grown on sapphire substrates using the hydride vapour phase epitaxy (HVPE) method. The temperatures of the substrates and the values of the precursor fluxes required to obtain each phase exclusively were determined. It was observed that the metastable ε-phase easily transforms into a stable β-phase during annealing. However, the metastable α-phase undergoes an intermediate amorphous phase during annealing, leading to flaking and collapse. This behavior arises from the excessively large increase in density (~10%) during the transformation from α-phase to β-phase, which results in significant elastic stresses and an increase in the height of the phase transition barrier.
{"title":"Phase Transformations in Gallium Oxide Layers","authors":"A. V. Osipov, Sh. Sh. Sharofidinov, A. V. Kremleva, E. V. Osipova, A. M. Smirnov, S. A. Kukushkin","doi":"10.1134/s1063785023900856","DOIUrl":"https://doi.org/10.1134/s1063785023900856","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The three main crystalline modifications of Ga<sub>2</sub>O<sub>3</sub>, namely α-phase, ε-phase, and β-phase were grown on sapphire substrates using the hydride vapour phase epitaxy (HVPE) method. The temperatures of the substrates and the values of the precursor fluxes required to obtain each phase exclusively were determined. It was observed that the metastable ε-phase easily transforms into a stable β-phase during annealing. However, the metastable α-phase undergoes an intermediate amorphous phase during annealing, leading to flaking and collapse. This behavior arises from the excessively large increase in density (~10%) during the transformation from α-phase to β-phase, which results in significant elastic stresses and an increase in the height of the phase transition barrier.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s1063785023010078
A. V. Ankudinov, M. M. Khalisov
Abstract
Consoles and bridges of MgNi2Si2O5(OH)4 nanoscrolls were tested for bending in atomic force microscope. Using test data, we analyze how the consoles or bridges were fixed, and took this information into account when calculating the Young’s modulus of the nanoscrolls. The results on the consoles are in good agreement with the results on the bridges when modeling the latter as three-span beams, and the former as beams on an elastic foundation with a suspended console.
{"title":"Bending Test of Nanoscale Consoles in Atomic Force Microscope","authors":"A. V. Ankudinov, M. M. Khalisov","doi":"10.1134/s1063785023010078","DOIUrl":"https://doi.org/10.1134/s1063785023010078","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Consoles and bridges of MgNi<sub>2</sub>Si<sub>2</sub>O<sub>5</sub>(OH)<sub>4</sub> nanoscrolls were tested for bending in atomic force microscope. Using test data, we analyze how the consoles or bridges were fixed, and took this information into account when calculating the Young’s modulus of the nanoscrolls. The results on the consoles are in good agreement with the results on the bridges when modeling the latter as three-span beams, and the former as beams on an elastic foundation with a suspended console.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s1063785023900819
N. A. Maleev, A. G. Kuzmenkov, M. M. Kulagina, A. P. Vasyl’ev, S. A. Blokhin, S. I. Troshkov, A. V. Nashchekin, M. A. Bobrov, A. A. Blokhin, K. O. Voropaev, V. E. Bugrov, V. M. Ustinov
Abstract
Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes (APD) was proposed and investigated. APD heterostructrures were grown by molecular-beam epitaxy. Fabricated APDs with the sensitive area diameter of about 30 micron were passivated by SiN deposition and demonstrated avalanche breakdown voltage Vbr 70–80 V. At the applied bias of 0.9 Vbr, the dark current was 75–200 nA. The single-mode coupled APDs demonstrated responsivity at a gain of unity higher than 0.5 A/W at 1550 nm.
{"title":"Mushroom Mesa Structure for InAlAs–InGaAs Avalanche Photodiodes","authors":"N. A. Maleev, A. G. Kuzmenkov, M. M. Kulagina, A. P. Vasyl’ev, S. A. Blokhin, S. I. Troshkov, A. V. Nashchekin, M. A. Bobrov, A. A. Blokhin, K. O. Voropaev, V. E. Bugrov, V. M. Ustinov","doi":"10.1134/s1063785023900819","DOIUrl":"https://doi.org/10.1134/s1063785023900819","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes (APD) was proposed and investigated. APD heterostructrures were grown by molecular-beam epitaxy. Fabricated APDs with the sensitive area diameter of about 30 micron were passivated by SiN deposition and demonstrated avalanche breakdown voltage <i>V</i><sub>br</sub> 70–80 V. At the applied bias of 0.9 <i>V</i><sub>br</sub>, the dark current was 75–200 nA. The single-mode coupled APDs demonstrated responsivity at a gain of unity higher than 0.5 A/W at 1550 nm.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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