Pub Date : 2020-11-06DOI: 10.1007/978-3-030-37790-8_10
C. Kumarasinghe, N. Neophytou
{"title":"Thermoelectric Power Factor Under Strain-Induced Band-Alignment in the Half-Heuslers NbCoSn and TiCoSb","authors":"C. Kumarasinghe, N. Neophytou","doi":"10.1007/978-3-030-37790-8_10","DOIUrl":"https://doi.org/10.1007/978-3-030-37790-8_10","url":null,"abstract":"","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91381906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-11-06DOI: 10.1103/physrevb.102.195410
B. Mendoza, Benjamin M. Fregoso
We compute the jerk current tensor of GaAs, Si, and ferroelectric single-layer GeS, GeSe, SnS, and SnSe. We find peak values of the order of $10^{14}$ mA/V$^3$s$^2$ in GaAs and Si within the visible energy spectrum and an order of magnitude larger in single-layer GeS, GeSe, SnSe and SnS. We show that the detailed knowledge of this tensor and its large value in single-layer GeS, GeSe, SnSe and SnS make it possible to predict the magnitude and angle of rotation of polarization of intense terahertz pulses generated in photoconductive switches and point to alternative functionalities of these devices.
{"title":"Terahertz radiation of jerk photocurrent","authors":"B. Mendoza, Benjamin M. Fregoso","doi":"10.1103/physrevb.102.195410","DOIUrl":"https://doi.org/10.1103/physrevb.102.195410","url":null,"abstract":"We compute the jerk current tensor of GaAs, Si, and ferroelectric single-layer GeS, GeSe, SnS, and SnSe. We find peak values of the order of $10^{14}$ mA/V$^3$s$^2$ in GaAs and Si within the visible energy spectrum and an order of magnitude larger in single-layer GeS, GeSe, SnSe and SnS. We show that the detailed knowledge of this tensor and its large value in single-layer GeS, GeSe, SnSe and SnS make it possible to predict the magnitude and angle of rotation of polarization of intense terahertz pulses generated in photoconductive switches and point to alternative functionalities of these devices.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84771609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-11-04DOI: 10.1103/physrevb.102.195207
A. Karjalainen, V. Prozheeva, K. Simula, I. Makkonen, V. Callewaert, J. Varley, F. Tuomisto
We report a systematic first principles study on positron annihilation parameters in the $beta$-Ga$_2$O$_3$ lattice and Ga mono-vacancy defects complemented with orientation-dependent experiments of the Doppler broadening of the positron-electron annihilation. We find that both the $beta$-Ga$_2$O$_3$ lattice and the considered defects exhibit unusually strong anisotropy in their Doppler broadening signals. This anisotropy is associated with low symmetry of the $beta$-Ga$_2$O$_3$ crystal structure that leads to unusual kind of one-dimensional confinement of positrons even in the delocalized state in the lattice. In particular, the split Ga vacancies recently observed by scanning transmission electron microscopy produce unusually anisotropic positron annihilation signals. We show that in experiments, the positron annihilation signals in $beta$-Ga$_2$O$_3$ samples seem to be often dominated by split Ga vacancies.
{"title":"Split Ga vacancies and the unusually strong anisotropy of positron annihilation spectra in \u0000β−Ga2O3","authors":"A. Karjalainen, V. Prozheeva, K. Simula, I. Makkonen, V. Callewaert, J. Varley, F. Tuomisto","doi":"10.1103/physrevb.102.195207","DOIUrl":"https://doi.org/10.1103/physrevb.102.195207","url":null,"abstract":"We report a systematic first principles study on positron annihilation parameters in the $beta$-Ga$_2$O$_3$ lattice and Ga mono-vacancy defects complemented with orientation-dependent experiments of the Doppler broadening of the positron-electron annihilation. We find that both the $beta$-Ga$_2$O$_3$ lattice and the considered defects exhibit unusually strong anisotropy in their Doppler broadening signals. This anisotropy is associated with low symmetry of the $beta$-Ga$_2$O$_3$ crystal structure that leads to unusual kind of one-dimensional confinement of positrons even in the delocalized state in the lattice. In particular, the split Ga vacancies recently observed by scanning transmission electron microscopy produce unusually anisotropic positron annihilation signals. We show that in experiments, the positron annihilation signals in $beta$-Ga$_2$O$_3$ samples seem to be often dominated by split Ga vacancies.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76590922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-11-03DOI: 10.1103/PHYSREVMATERIALS.5.013807
X. Ren, F. Merz, Hong Jiang, Yi Yao, M. Rampp, H. Lederer, V. Blum, M. Scheffler
We present an all-electron, periodic {GnWn} implementation within the numerical atomic orbital (NAO) basis framework. A localized variant of the resolution-of-the-identity (RI) approximation is employed to significantly reduce the computational cost of evaluating and storing the two-electron Coulomb repulsion integrals. We demonstrate that the error arising from localized RI approximation can be reduced to an insignificant level by enhancing the set of auxiliary basis functions, used to expand the products of two single-particle NAOs. An efficient algorithm is introduced to deal with the Coulomb singularity in the Brillouin zone sampling that is suitable for the NAO framework. We perform systematic convergence tests and identify a set of computational parameters, which can serve as the default choice for most practical purposes. Benchmark calculations are carried out for a set of prototypical semiconductors and insulators, and compared to independent reference values obtained from an independent $G_0W_0$ implementation based on linearized augmented plane waves (LAPW) plus high-energy localized orbitals (HLOs) basis set, as well as experimental results. With a moderate (FHI-aims textit{tier} 2) NAO basis set, our $G_0W_0$ calculations produce band gaps that typically lie in between the standard LAPW and the LAPW+HLO results. Complementing textit{tier} 2 with highly localized Slater-type orbitals (STOs), we find that the obtained band gaps show an overall convergence towards the LAPW+HLO results. The algorithms and techniques developed in this work pave the way for efficient implementations of correlated methods within the NAO framework.
{"title":"All-electron periodic \u0000G0W0\u0000 implementation with numerical atomic orbital basis functions: Algorithm and benchmarks","authors":"X. Ren, F. Merz, Hong Jiang, Yi Yao, M. Rampp, H. Lederer, V. Blum, M. Scheffler","doi":"10.1103/PHYSREVMATERIALS.5.013807","DOIUrl":"https://doi.org/10.1103/PHYSREVMATERIALS.5.013807","url":null,"abstract":"We present an all-electron, periodic {GnWn} implementation within the numerical atomic orbital (NAO) basis framework. A localized variant of the resolution-of-the-identity (RI) approximation is employed to significantly reduce the computational cost of evaluating and storing the two-electron Coulomb repulsion integrals. We demonstrate that the error arising from localized RI approximation can be reduced to an insignificant level by enhancing the set of auxiliary basis functions, used to expand the products of two single-particle NAOs. An efficient algorithm is introduced to deal with the Coulomb singularity in the Brillouin zone sampling that is suitable for the NAO framework. We perform systematic convergence tests and identify a set of computational parameters, which can serve as the default choice for most practical purposes. Benchmark calculations are carried out for a set of prototypical semiconductors and insulators, and compared to independent reference values obtained from an independent $G_0W_0$ implementation based on linearized augmented plane waves (LAPW) plus high-energy localized orbitals (HLOs) basis set, as well as experimental results. With a moderate (FHI-aims textit{tier} 2) NAO basis set, our $G_0W_0$ calculations produce band gaps that typically lie in between the standard LAPW and the LAPW+HLO results. Complementing textit{tier} 2 with highly localized Slater-type orbitals (STOs), we find that the obtained band gaps show an overall convergence towards the LAPW+HLO results. The algorithms and techniques developed in this work pave the way for efficient implementations of correlated methods within the NAO framework.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87435405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. R. Fast, J. Thibault, V. Sauer, M. Dunsmore, A. Kav, J. Losby, Z. Diao, E. Luber, M. Belov, M. R. Freeman
Measurements of magnetic torque are most commonly preformed about a single axis or component of torque. Such measurements are very useful for hysteresis measurements of thin film structures in particular, where high shape anisotropy yields a near-proportionality of in-plane magnetic moment and the magnetic torque along the perpendicular in-plane axis. A technique to measure the full magnetic torque vector (three orthogonal torque components) on micro- and nano-scale magnetic materials is introduced. The method is demonstrated using a modified, single-paddle silicon-on-insulator resonant torque sensor. The mechanical compliances to all three orthogonal torque components are maximized by clamping the sensor at a single point. Mechanically-resonant AC torques are driven by an RF field containing a frequency component for each fundamental torsional mode of the device, and the resulting displacements read out through optical position-sensitive detection. The measurements are compared with micromagnetic simulations of the mechanical torque to augment the interpretation of the signals. As an application example, simultaneous observations of hysteresis in the net magnetization along with the field-dependent in-plane anisotropy is highly beneficial for studies of exchange bias.
{"title":"Simultaneous three-axis torque measurements of micromagnetism","authors":"K. R. Fast, J. Thibault, V. Sauer, M. Dunsmore, A. Kav, J. Losby, Z. Diao, E. Luber, M. Belov, M. R. Freeman","doi":"10.1063/9.0000106","DOIUrl":"https://doi.org/10.1063/9.0000106","url":null,"abstract":"Measurements of magnetic torque are most commonly preformed about a single axis or component of torque. Such measurements are very useful for hysteresis measurements of thin film structures in particular, where high shape anisotropy yields a near-proportionality of in-plane magnetic moment and the magnetic torque along the perpendicular in-plane axis. A technique to measure the full magnetic torque vector (three orthogonal torque components) on micro- and nano-scale magnetic materials is introduced. The method is demonstrated using a modified, single-paddle silicon-on-insulator resonant torque sensor. The mechanical compliances to all three orthogonal torque components are maximized by clamping the sensor at a single point. Mechanically-resonant AC torques are driven by an RF field containing a frequency component for each fundamental torsional mode of the device, and the resulting displacements read out through optical position-sensitive detection. The measurements are compared with micromagnetic simulations of the mechanical torque to augment the interpretation of the signals. As an application example, simultaneous observations of hysteresis in the net magnetization along with the field-dependent in-plane anisotropy is highly beneficial for studies of exchange bias.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79561588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-11-03DOI: 10.1103/PhysRevX.11.021067
G. Khalsa, N. Benedek, J. Moses
The Raman effect -- inelastic scattering of light by lattice vibrations (phonons) -- is one of the workhorses in optical physics and a ubiquitous tool for characterization of crystalline materials. In the typical experimental frequency range, the Raman effect is dominated by changes to electronic dipoles by Raman-active phonons, but when light is tuned into the mid- and far-infrared, the Raman effect is rich with potential physical pathways due to the presence of additional material dipoles through the lattice. Here we derive symmetry relations and complete expressions for the optical susceptibility including all electronic and lattice mediated pathways for the Raman effect using a perturbative approach. We show that in insulating materials, when light is tuned to resonantly excite infrared active phonons, the Raman effect may be dominated by direct changes to the lattice polarizability induced by Raman-active phonons, a mechanism distinct from the recently investigated ionic Raman scattering. Using first-principles techniques we show that, in an archetypal insulating perovskite SrTiO$_3$, this infrared-resonant Raman effect can induce optical symmetry breaking and giant shifts to the refractive index which are tailored by the incident light polarization and infrared active phonon excited. Additionally, the nonlinear polarization pathway responsible for the infrared-resonant Raman effect contributes to the quasistatic control of crystalline structure that has been the focus of recent nonlinear phononics studies.
{"title":"Ultrafast Control of Material Optical Properties via the Infrared Resonant Raman Effect","authors":"G. Khalsa, N. Benedek, J. Moses","doi":"10.1103/PhysRevX.11.021067","DOIUrl":"https://doi.org/10.1103/PhysRevX.11.021067","url":null,"abstract":"The Raman effect -- inelastic scattering of light by lattice vibrations (phonons) -- is one of the workhorses in optical physics and a ubiquitous tool for characterization of crystalline materials. In the typical experimental frequency range, the Raman effect is dominated by changes to electronic dipoles by Raman-active phonons, but when light is tuned into the mid- and far-infrared, the Raman effect is rich with potential physical pathways due to the presence of additional material dipoles through the lattice. Here we derive symmetry relations and complete expressions for the optical susceptibility including all electronic and lattice mediated pathways for the Raman effect using a perturbative approach. We show that in insulating materials, when light is tuned to resonantly excite infrared active phonons, the Raman effect may be dominated by direct changes to the lattice polarizability induced by Raman-active phonons, a mechanism distinct from the recently investigated ionic Raman scattering. Using first-principles techniques we show that, in an archetypal insulating perovskite SrTiO$_3$, this infrared-resonant Raman effect can induce optical symmetry breaking and giant shifts to the refractive index which are tailored by the incident light polarization and infrared active phonon excited. Additionally, the nonlinear polarization pathway responsible for the infrared-resonant Raman effect contributes to the quasistatic control of crystalline structure that has been the focus of recent nonlinear phononics studies.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80764100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G. P. Zhang, R. Meadows, A. Tamayo, Y. Bai, T. George
Interest in all-optical spin switching (AOS) is growing rapidly. The recent discovery of AOS in Mn$_2$RuGa provides a much needed clean case of crystalline ferrimagnets for theoretical simulations. Here, we attempt to simulate it using the state-of-the-art first-principles method combined with the Heisenberg exchange model. We first compute the spin moments at two inequivalent manganese sites and then feed them into our model Hamiltonian. We employ an ultrafast laser pulse to switch the spins. We find that there is a similar optimal laser field amplitude to switch spins. However, we find that the exchange interaction has a significant effect on the system switchability. Weakening the exchange interaction could make the system unswitchable. This provides a crucial insight into the switching mechanism in ferrimagnets.
{"title":"An attempt to simulate laser-induced all-optical spin switching in a crystalline ferrimagnet","authors":"G. P. Zhang, R. Meadows, A. Tamayo, Y. Bai, T. George","doi":"10.1063/9.0000003","DOIUrl":"https://doi.org/10.1063/9.0000003","url":null,"abstract":"Interest in all-optical spin switching (AOS) is growing rapidly. The recent discovery of AOS in Mn$_2$RuGa provides a much needed clean case of crystalline ferrimagnets for theoretical simulations. Here, we attempt to simulate it using the state-of-the-art first-principles method combined with the Heisenberg exchange model. We first compute the spin moments at two inequivalent manganese sites and then feed them into our model Hamiltonian. We employ an ultrafast laser pulse to switch the spins. We find that there is a similar optimal laser field amplitude to switch spins. However, we find that the exchange interaction has a significant effect on the system switchability. Weakening the exchange interaction could make the system unswitchable. This provides a crucial insight into the switching mechanism in ferrimagnets.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87948701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-30DOI: 10.1103/physrevmaterials.4.113404
J. Park, J. Jo, J. Sears, Young-June Kim, Miyoung Kim, P. Kim, G. Yi
Combining various two-dimensional materials into novel van der Waals (vdW) heterostructures has been shown to lead to new emergent quantum systems. A novel heterostructure composed of a vdW topological insulator (TI) such as Bi$_{2}$Se$_{3}$ with a quantum spin liquid (QSL) such as $alpha$-RuCl$_{3}$ is of great interest for the potential for the chiral Dirac electrons in the TI surface states to interact strongly with the fractionalized fermionic spin excitations in the QSL. We report the heteroepitaxial growth of Bi$_{2}$Se$_{3}$ thin films on $alpha$-RuCl$_{3}$ as well as the characterization of their structural and electrical properties. Bi$_{2}$Se$_{3}$ thin films with an atomically smooth and uniform surface are grown by molecular beam epitaxy. The heterostructure exhibits a preferential epitaxial relationship corresponding to $(5 times 5)-$Bi$_{2}$Se$_{3}/(2sqrt{3} times 2sqrt{3})R30deg-alpha$-RuCl$_{3}$ commensurate supercells with a periodicity of 1.2 nm. The formation of the superlattice despite a lattice mismatch as large as 60% is attributed to the van der Waals heteroepitaxy. Magnetotransport measurements as a function of temperature show Bi$_{2}$Se$_{3}$ films grown on $alpha$-RuCl$_{3}$ are heavily $n$-doped, $n_{e}$ ~10$^{14}$ cm$^{-2}$, with mobility $mu$ ~450 cm$^{2}$ V$^{-1}$ s$^{-1}$ at low temperatures.
将各种二维材料组合成新颖的范德华异质结构(vdW)已被证明可以产生新的涌现量子系统。由vdW拓扑绝缘体(TI)如Bi $_{2}$ Se $_{3}$与量子自旋液体(QSL)如$alpha$ -RuCl $_{3}$组成的新型异质结构对TI表面态中的手性狄拉克电子与QSL中分数化费米子自旋激发强烈相互作用的潜力非常感兴趣。我们报道了Bi $_{2}$ Se $_{3}$薄膜在$alpha$ -RuCl $_{3}$上的异质外延生长，以及其结构和电学性能的表征。采用分子束外延技术制备了具有原子光滑均匀表面的Bi $_{2}$ Se $_{3}$薄膜。异质结构表现出优先外延关系，对应于$(5 times 5)-$ Bi $_{2}$ Se $_{3}/(2sqrt{3} times 2sqrt{3})R30deg-alpha$ -RuCl $_{3}$相称的超细胞，周期为1.2 nm。尽管晶格失配高达60，但仍能形成超晶格% is attributed to the van der Waals heteroepitaxy. Magnetotransport measurements as a function of temperature show Bi$_{2}$Se$_{3}$ films grown on $alpha$-RuCl$_{3}$ are heavily $n$-doped, $n_{e}$ ~10$^{14}$ cm$^{-2}$, with mobility $mu$ ~450 cm$^{2}$ V$^{-1}$ s$^{-1}$ at low temperatures.
{"title":"Bi2Se3\u0000 thin films heteroepitaxially grown on \u0000α−RuCl3","authors":"J. Park, J. Jo, J. Sears, Young-June Kim, Miyoung Kim, P. Kim, G. Yi","doi":"10.1103/physrevmaterials.4.113404","DOIUrl":"https://doi.org/10.1103/physrevmaterials.4.113404","url":null,"abstract":"Combining various two-dimensional materials into novel van der Waals (vdW) heterostructures has been shown to lead to new emergent quantum systems. A novel heterostructure composed of a vdW topological insulator (TI) such as Bi$_{2}$Se$_{3}$ with a quantum spin liquid (QSL) such as $alpha$-RuCl$_{3}$ is of great interest for the potential for the chiral Dirac electrons in the TI surface states to interact strongly with the fractionalized fermionic spin excitations in the QSL. We report the heteroepitaxial growth of Bi$_{2}$Se$_{3}$ thin films on $alpha$-RuCl$_{3}$ as well as the characterization of their structural and electrical properties. Bi$_{2}$Se$_{3}$ thin films with an atomically smooth and uniform surface are grown by molecular beam epitaxy. The heterostructure exhibits a preferential epitaxial relationship corresponding to $(5 times 5)-$Bi$_{2}$Se$_{3}/(2sqrt{3} times 2sqrt{3})R30deg-alpha$-RuCl$_{3}$ commensurate supercells with a periodicity of 1.2 nm. The formation of the superlattice despite a lattice mismatch as large as 60% is attributed to the van der Waals heteroepitaxy. Magnetotransport measurements as a function of temperature show Bi$_{2}$Se$_{3}$ films grown on $alpha$-RuCl$_{3}$ are heavily $n$-doped, $n_{e}$ ~10$^{14}$ cm$^{-2}$, with mobility $mu$ ~450 cm$^{2}$ V$^{-1}$ s$^{-1}$ at low temperatures.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80523112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Electrically driven adiabatic changes of temperature are identified in the archetypal electrocaloric material PbSc0.5Ta0.5O3 by comparing isothermal changes of electrical polarization due to slow variation of electric field, and adiabatic changes of electrical polarization due to fast variation of electric field. By obtaining isothermal (adiabatic) electrical polarization data at measurement (starting) temperatures separated by <0.4 K, we identify a maximum temperature change of ~2 K due to a maximum field change of 26 kV cm-1, for starting temperatures in the range 300 - 315 K. These quasi indirect measurements combine with their direct, indirect and quasi-direct counterparts to complete the set, and could find routine use in future.
{"title":"Quasi-indirect measurement of electrocaloric temperature change in PbSc0.5Ta0.5O3 via comparison of adiabatic and isothermal electrical polarization data","authors":"S. Crossley, R. Whatmore, N. Mathur, X. Moya","doi":"10.1063/5.0037809","DOIUrl":"https://doi.org/10.1063/5.0037809","url":null,"abstract":"Electrically driven adiabatic changes of temperature are identified in the archetypal electrocaloric material PbSc0.5Ta0.5O3 by comparing isothermal changes of electrical polarization due to slow variation of electric field, and adiabatic changes of electrical polarization due to fast variation of electric field. By obtaining isothermal (adiabatic) electrical polarization data at measurement (starting) temperatures separated by <0.4 K, we identify a maximum temperature change of ~2 K due to a maximum field change of 26 kV cm-1, for starting temperatures in the range 300 - 315 K. These quasi indirect measurements combine with their direct, indirect and quasi-direct counterparts to complete the set, and could find routine use in future.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86574877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chris Stanford, M. J. Wilson, B. Cabrera, M. Diamond, N. Kurinsky, R. Moffatt, F. Ponce, B. Krosigk, B. Young
The use of cryogenic silicon as a detector medium for dark matter searches is gaining popularity. Many of these searches are highly dependent on the value of the photoelectric absorption cross section of silicon at low temperatures, particularly near the silicon band gap energy, where the searches are most sensitive to low mass dark matter candidates. While such cross section data has been lacking from the literature, previous dark matter search experiments have attempted to estimate this parameter by extrapolating it from higher temperature data. However, discrepancies in the high temperature data have led to order-of-magnitude differences in the extrapolations. In this paper, we resolve these discrepancies by using a novel technique to make a direct, low temperature measurement of the photoelectric absorption cross section of silicon at energies near the band gap.
{"title":"Photoelectric absorption cross section of silicon near the bandgap from room temperature to sub-Kelvin temperature","authors":"Chris Stanford, M. J. Wilson, B. Cabrera, M. Diamond, N. Kurinsky, R. Moffatt, F. Ponce, B. Krosigk, B. Young","doi":"10.1063/5.0038392","DOIUrl":"https://doi.org/10.1063/5.0038392","url":null,"abstract":"The use of cryogenic silicon as a detector medium for dark matter searches is gaining popularity. Many of these searches are highly dependent on the value of the photoelectric absorption cross section of silicon at low temperatures, particularly near the silicon band gap energy, where the searches are most sensitive to low mass dark matter candidates. While such cross section data has been lacking from the literature, previous dark matter search experiments have attempted to estimate this parameter by extrapolating it from higher temperature data. However, discrepancies in the high temperature data have led to order-of-magnitude differences in the extrapolations. In this paper, we resolve these discrepancies by using a novel technique to make a direct, low temperature measurement of the photoelectric absorption cross section of silicon at energies near the band gap.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85816006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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