Pub Date : 2020-12-14DOI: 10.1103/PhysRevB.103.195436
J. G. Mchugh, P. Mouratidis, K. Jolley
The ripplocation is a crystallographic defect which is unique to layered materials, combining nanocale delamination with the crystallographic slip of a basal dislocation. Here, we have studied basal dislocations and ripplocations using analytical and computational techniques. Expressions for the energetic and structural scaling factors of surface ripplocations are derived, which are in close correspondence to the physics of a classical carpet ruck. Our simulations demonstrate that the lowest-energy structure of dislocation pile-ups in layered materials is the ripplocation, while large dislocation pile-ups in bulk graphite demonstrate multilayer delamination, curvature and voids. This can provide a concise explanation for the large volumetric expansion seen in irradiated graphite.
{"title":"Ripplocations in layered materials: Sublinear scaling and basal climb","authors":"J. G. Mchugh, P. Mouratidis, K. Jolley","doi":"10.1103/PhysRevB.103.195436","DOIUrl":"https://doi.org/10.1103/PhysRevB.103.195436","url":null,"abstract":"The ripplocation is a crystallographic defect which is unique to layered materials, combining nanocale delamination with the crystallographic slip of a basal dislocation. Here, we have studied basal dislocations and ripplocations using analytical and computational techniques. Expressions for the energetic and structural scaling factors of surface ripplocations are derived, which are in close correspondence to the physics of a classical carpet ruck. Our simulations demonstrate that the lowest-energy structure of dislocation pile-ups in layered materials is the ripplocation, while large dislocation pile-ups in bulk graphite demonstrate multilayer delamination, curvature and voids. This can provide a concise explanation for the large volumetric expansion seen in irradiated graphite.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":"22 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81926936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Haidar, H. Mazraati, P. Dürrenfeld, H. Fulara, M. Ranjbar, J. Åkerman
We demonstrate the compositional effect on the magnetodynamic and auto-oscillations properties of Ni100-xFex/Pt (x= 10 to 40) nanoconstriction based spin Hall nano-oscillators. Using spin-torque ferromagnetic resonance (ST-FMR) performed on microstrips, we measure a significant reduction in both damping and spin Hall efficiency with increasing Fe content, which lowers the spin pumping contribution. The strong compositional effect on spin Hall efficiency is primarily attributed to the increased saturation magnetization in Fe-rich devices. As a direct consequence, higher current densities are required to drive spin-wave auto-oscillations at higher microwave frequencies in Fe-rich nano-constriction devices. Our results establish the critical role of the compositional effect in engineering the magnetodynamic and auto-oscillation properties of spin Hall devices for microwav eand magnonic applications.
{"title":"Compositional effect on auto-oscillation behavior of Ni 100 −xFex/Pt spin Hall nano-oscillators","authors":"M. Haidar, H. Mazraati, P. Dürrenfeld, H. Fulara, M. Ranjbar, J. Åkerman","doi":"10.1063/5.0035697","DOIUrl":"https://doi.org/10.1063/5.0035697","url":null,"abstract":"We demonstrate the compositional effect on the magnetodynamic and auto-oscillations properties of Ni100-xFex/Pt (x= 10 to 40) nanoconstriction based spin Hall nano-oscillators. Using spin-torque ferromagnetic resonance (ST-FMR) performed on microstrips, we measure a significant reduction in both damping and spin Hall efficiency with increasing Fe content, which lowers the spin pumping contribution. The strong compositional effect on spin Hall efficiency is primarily attributed to the increased saturation magnetization in Fe-rich devices. As a direct consequence, higher current densities are required to drive spin-wave auto-oscillations at higher microwave frequencies in Fe-rich nano-constriction devices. Our results establish the critical role of the compositional effect in engineering the magnetodynamic and auto-oscillation properties of spin Hall devices for microwav eand magnonic applications.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":"26 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88151102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lead and tin-based chalcogenide semiconductors like PbTe or SnSe have long been known to exhibit an unusually low thermal conductivity that makes them very attractive thermoelectric materials. An apparently unrelated fact is that the excitonic bandgap in these materials increases with temperature, whereas for most semiconductors one observes the opposite trend. These two anomalous features are also seen in a very different class of photovoltaic materials, namely the halide-perovskites such as CsPbBr3. It has been previously proposed that emphanisis, a local symmetry-breaking phenomenon, is the one common origin of these unusual features. Discovered a decade ago, emphanisis is the name given to the observed displacement of the lead or the tin ions from their cubic symmetry ground state to a locally distorted phase at high temperature. This phenomenon has been puzzling because it is unusual for the high-temperature state to be of a lower symmetry than the degenerate ground state. Motivated by the celebrated vibration-inversion resonance of the ammonia molecule, we propose a quantum tunneling-based model for emphanisis where decoherence is responsible for the local symmetry breaking with increasing temperature. From the analytic expression of the temperature dependence of the tunnel splitting (which serves as an order parameter), we provide three-parameter fitting formulae which capture the observed temperature dependence of the ionic displacements as well as the anomalous increase of the excitonic bandgap in all the relevant materials.
{"title":"Dissipation-induced symmetry breaking: Emphanitic transitions in lead- and tin-containing chalcogenides and halide perovskites","authors":"K. Mukhuti, S. Sinha, S. Sinha, B. Bansal","doi":"10.1063/5.0040056","DOIUrl":"https://doi.org/10.1063/5.0040056","url":null,"abstract":"Lead and tin-based chalcogenide semiconductors like PbTe or SnSe have long been known to exhibit an unusually low thermal conductivity that makes them very attractive thermoelectric materials. An apparently unrelated fact is that the excitonic bandgap in these materials increases with temperature, whereas for most semiconductors one observes the opposite trend. These two anomalous features are also seen in a very different class of photovoltaic materials, namely the halide-perovskites such as CsPbBr3. It has been previously proposed that emphanisis, a local symmetry-breaking phenomenon, is the one common origin of these unusual features. Discovered a decade ago, emphanisis is the name given to the observed displacement of the lead or the tin ions from their cubic symmetry ground state to a locally distorted phase at high temperature. This phenomenon has been puzzling because it is unusual for the high-temperature state to be of a lower symmetry than the degenerate ground state. Motivated by the celebrated vibration-inversion resonance of the ammonia molecule, we propose a quantum tunneling-based model for emphanisis where decoherence is responsible for the local symmetry breaking with increasing temperature. From the analytic expression of the temperature dependence of the tunnel splitting (which serves as an order parameter), we provide three-parameter fitting formulae which capture the observed temperature dependence of the ionic displacements as well as the anomalous increase of the excitonic bandgap in all the relevant materials.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81439187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-12-10DOI: 10.1103/PHYSREVB.103.115145
Zhaopeng Guo, D. Yan, Haohao Sheng, S. Nie, Youguo Shi, Zhijun Wang
Quantum spin Hall (QSH) effect with great promise for the potential application in spintronics and quantum computing has attracted extensive research interest from both theoretical and experimental researchers. Here, we predict monolayer Ta$_2$Pd$_3$Te$_5$ can be a QSH insulator based on first-principles calculations. The interlayer binding energy in the layered van der Waals compound Ta$_2$Pd$_3$Te$_5$ is 19.6 meV/A$^2$; thus, its monolayer/thin-film structures could be readily obtained by exfoliation. The band inversion near the Fermi level ($E_F$) is an intrinsic characteristic, which happens between Ta-$5d$ and Pd-$4d$ orbitals without spin-orbit coupling (SOC). The SOC effect opens a global gap and makes the system a QSH insulator. With the $d$-$d$ band-inverted feature, the nontrivial topology in monolayer Ta$_2$Pd$_3$Te$_5$ is characterized by the time-reversal topological invariant $mathbb Z_2=1$, which is computed by the one-dimensional (1D) Wilson loop method as implemented in our first-principles calculations. The helical edge modes are also obtained using surface Green's function method. Our calculations show that the QSH state in Ta$_2M_3$Te$_5$ ($M=$ Pd, Ni) can be tuned by external strain. These monolayers and thin films provide feasible platforms for realizing QSH effect as well as related devices.
{"title":"Quantum spin Hall effect in \u0000Ta2M3Te5\u0000 \u0000(M=Pd,Ni)","authors":"Zhaopeng Guo, D. Yan, Haohao Sheng, S. Nie, Youguo Shi, Zhijun Wang","doi":"10.1103/PHYSREVB.103.115145","DOIUrl":"https://doi.org/10.1103/PHYSREVB.103.115145","url":null,"abstract":"Quantum spin Hall (QSH) effect with great promise for the potential application in spintronics and quantum computing has attracted extensive research interest from both theoretical and experimental researchers. Here, we predict monolayer Ta$_2$Pd$_3$Te$_5$ can be a QSH insulator based on first-principles calculations. The interlayer binding energy in the layered van der Waals compound Ta$_2$Pd$_3$Te$_5$ is 19.6 meV/A$^2$; thus, its monolayer/thin-film structures could be readily obtained by exfoliation. The band inversion near the Fermi level ($E_F$) is an intrinsic characteristic, which happens between Ta-$5d$ and Pd-$4d$ orbitals without spin-orbit coupling (SOC). The SOC effect opens a global gap and makes the system a QSH insulator. With the $d$-$d$ band-inverted feature, the nontrivial topology in monolayer Ta$_2$Pd$_3$Te$_5$ is characterized by the time-reversal topological invariant $mathbb Z_2=1$, which is computed by the one-dimensional (1D) Wilson loop method as implemented in our first-principles calculations. The helical edge modes are also obtained using surface Green's function method. Our calculations show that the QSH state in Ta$_2M_3$Te$_5$ ($M=$ Pd, Ni) can be tuned by external strain. These monolayers and thin films provide feasible platforms for realizing QSH effect as well as related devices.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":"30 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77691352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-12-09DOI: 10.1103/PHYSREVB.103.165101
A. Kutepov
A detailed account of the implementation of equations of the Relativistic Density Functional Theory (RDFT) using basis sets of APW/LAPW type with flexible extensions provided by local orbitals is given. Earlier discoveries of the importance of the High Derivative Local Orbital (HDLO) extension of APW/LAPW basis set for enhancing the accuracy of DFT calculations are confirmed using fully relativistic approach and $alpha$-U as an example. High Energy Local Orbitals (HELO's), however indispensable for GW calculations, are considerably less efficient in enhancing the accuracy of DFT applications. It is shown, that a simplified approach to the relativistic effects, namely, considering them only inside the muffin-tin (MT) spheres, produces basically identical results (as compared to fully relativistic approach) for the electronic free energy of the five materials considered in this work. By comparing the effect of the simplified approach on the electronic free energy with its effect on the electronic kinetic energy we conclude that the insensitivity of the free energy to the way we describe the relativistic effects in the interstitial region is related to the variational property of this quantity.
{"title":"Elimination of the linearization error in APW/LAPW basis set: Dirac-Kohn-Sham equations","authors":"A. Kutepov","doi":"10.1103/PHYSREVB.103.165101","DOIUrl":"https://doi.org/10.1103/PHYSREVB.103.165101","url":null,"abstract":"A detailed account of the implementation of equations of the Relativistic Density Functional Theory (RDFT) using basis sets of APW/LAPW type with flexible extensions provided by local orbitals is given. Earlier discoveries of the importance of the High Derivative Local Orbital (HDLO) extension of APW/LAPW basis set for enhancing the accuracy of DFT calculations are confirmed using fully relativistic approach and $alpha$-U as an example. High Energy Local Orbitals (HELO's), however indispensable for GW calculations, are considerably less efficient in enhancing the accuracy of DFT applications. It is shown, that a simplified approach to the relativistic effects, namely, considering them only inside the muffin-tin (MT) spheres, produces basically identical results (as compared to fully relativistic approach) for the electronic free energy of the five materials considered in this work. By comparing the effect of the simplified approach on the electronic free energy with its effect on the electronic kinetic energy we conclude that the insensitivity of the free energy to the way we describe the relativistic effects in the interstitial region is related to the variational property of this quantity.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89157791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-12-08DOI: 10.1103/PHYSREVB.103.L121403
S. Ono, Honoka Satomi
Using first principles calculations, the energetic stability of two-dimensional (2D) binary alloys $XY$ is investigated, where $X$ and $Y$ indicate the metallic element from Li to Pb in the periodic table, i.e., the total number of 1081 alloys. The formation energy of 2D alloys in the buckled honeycomb (bHC) lattice structure is correlated to that of three-dimensional alloys in the B$_h$ structure. By performing phonon dispersion calculations, we show that if an alloy in the B$_h$ structure has been synthesized experimentally, that in the bHC structure is dynamically stable. In contrast, an alloy in the bHC structure is unstable, that in the B$_h$ structure has not been synthesized yet. The negatively large formation energy is not a necessary and sufficient condition for yielding the dynamical stability of alloys.
{"title":"High-throughput computational search for two-dimensional binary compounds: Energetic stability versus synthesizability of three-dimensional counterparts","authors":"S. Ono, Honoka Satomi","doi":"10.1103/PHYSREVB.103.L121403","DOIUrl":"https://doi.org/10.1103/PHYSREVB.103.L121403","url":null,"abstract":"Using first principles calculations, the energetic stability of two-dimensional (2D) binary alloys $XY$ is investigated, where $X$ and $Y$ indicate the metallic element from Li to Pb in the periodic table, i.e., the total number of 1081 alloys. The formation energy of 2D alloys in the buckled honeycomb (bHC) lattice structure is correlated to that of three-dimensional alloys in the B$_h$ structure. By performing phonon dispersion calculations, we show that if an alloy in the B$_h$ structure has been synthesized experimentally, that in the bHC structure is dynamically stable. In contrast, an alloy in the bHC structure is unstable, that in the B$_h$ structure has not been synthesized yet. The negatively large formation energy is not a necessary and sufficient condition for yielding the dynamical stability of alloys.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":"17 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85427102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I. Breev, A. Poshakinskiy, V. Yakovleva, S. Nagalyuk, E. N. Mokhov, R. Hübner, G. Astakhov, P. Baranov, A. Anisimov
We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerface with spatially-resolved confocal Raman spectroscopy. The zero-field splitting of the V1/V3 and V2 centers in 6H-SiC, measured by optically-detected magnetic resonance, reveal significant changes at the heterointerface compared to the bulk value. This approach allows unambiguous determination of the spin-deformation interaction constant, which turns out to be $0.75 , mathrm{GHz}$ for the V1/V3 centers and $0.5 , mathrm{GHz}$ for the V2 centers. Provided piezoelectricity of AlN, our results offer a strategy to realize the on-demand fine tuning of spin transition energies in SiC by deformation.
{"title":"Stress-controlled zero-field spin splitting in silicon carbide","authors":"I. Breev, A. Poshakinskiy, V. Yakovleva, S. Nagalyuk, E. N. Mokhov, R. Hübner, G. Astakhov, P. Baranov, A. Anisimov","doi":"10.1063/5.0040936","DOIUrl":"https://doi.org/10.1063/5.0040936","url":null,"abstract":"We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerface with spatially-resolved confocal Raman spectroscopy. The zero-field splitting of the V1/V3 and V2 centers in 6H-SiC, measured by optically-detected magnetic resonance, reveal significant changes at the heterointerface compared to the bulk value. This approach allows unambiguous determination of the spin-deformation interaction constant, which turns out to be $0.75 , mathrm{GHz}$ for the V1/V3 centers and $0.5 , mathrm{GHz}$ for the V2 centers. Provided piezoelectricity of AlN, our results offer a strategy to realize the on-demand fine tuning of spin transition energies in SiC by deformation.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":"54 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86177638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-12-08DOI: 10.1021/accountsmr.0c00063
Lei Tang, Junyang Tan, Huiyun Nong, Bilu Liu, Hui‐Ming Cheng
CONSPECTUS: Two-dimensional (2D) compound materials are promising materials for use in electronics, optoelectronics, flexible devices, etc. because they are ultrathin and cover a wide range of properties. Among all methods to prepare 2D materials, chemical vapor deposition (CVD) is promising because it produces materials with a high quality and reasonable cost. So far, much efforts have been made to produce 2D compound materials with large domain size, controllable number of layers, fast-growth rate, and high quality features, etc. However, due to the complicated growth mechanism like sublimation and diffusion processes of multiple precursors, maintaining the controllability, repeatability, and high quality of CVD grown 2D binary and ternary materials is still a big challenge, which prevents their widespread use. Here, taking 2D transition metal dichalcogenides (TMDCs) as examples, we review current progress and highlight some promising growth strategies for the growth of 2D compound materials. The key technology issues which affect the CVD process, including non-metal precursor, metal precursor, substrate engineering, temperature, and gas flow, are discussed. Also, methods in improving the quality of CVD-grown 2D materials and current understanding on their growth mechanism are highlighted. Finally, challenges and opportunities in this field are proposed. We believe this review will guide the future design of controllable CVD systems for the growth of 2D compound materials with good controllability and high quality, laying the foundations for their potential applications.
{"title":"Chemical Vapor Deposition Growth of Two-Dimensional Compound Materials: Controllability, Material Quality, and Growth Mechanism","authors":"Lei Tang, Junyang Tan, Huiyun Nong, Bilu Liu, Hui‐Ming Cheng","doi":"10.1021/accountsmr.0c00063","DOIUrl":"https://doi.org/10.1021/accountsmr.0c00063","url":null,"abstract":"CONSPECTUS: Two-dimensional (2D) compound materials are promising materials for use in electronics, optoelectronics, flexible devices, etc. because they are ultrathin and cover a wide range of properties. Among all methods to prepare 2D materials, chemical vapor deposition (CVD) is promising because it produces materials with a high quality and reasonable cost. So far, much efforts have been made to produce 2D compound materials with large domain size, controllable number of layers, fast-growth rate, and high quality features, etc. However, due to the complicated growth mechanism like sublimation and diffusion processes of multiple precursors, maintaining the controllability, repeatability, and high quality of CVD grown 2D binary and ternary materials is still a big challenge, which prevents their widespread use. Here, taking 2D transition metal dichalcogenides (TMDCs) as examples, we review current progress and highlight some promising growth strategies for the growth of 2D compound materials. The key technology issues which affect the CVD process, including non-metal precursor, metal precursor, substrate engineering, temperature, and gas flow, are discussed. Also, methods in improving the quality of CVD-grown 2D materials and current understanding on their growth mechanism are highlighted. Finally, challenges and opportunities in this field are proposed. We believe this review will guide the future design of controllable CVD systems for the growth of 2D compound materials with good controllability and high quality, laying the foundations for their potential applications.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82440611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-12-06DOI: 10.1103/PhysRevB.103.144107
M. Verezhak, S. Van Petegem, A. Rodriguez-Fernandez, P. Godard, Klaus Wakonig, D. Karpov, V. Jacques, A. Menzel, L. Thilly, A. Diaz
Strain and defects in crystalline materials are responsible for the distinct mechanical, electric and magnetic properties of a desired material, making their study an essential task in material characterization, fabrication and design. Existing techniques for the visualization of strain fields, such as transmission electron microscopy and diffraction, are destructive and limited to thin slices of the materials. On the other hand, non-destructive X-ray imaging methods either have a reduced resolution or are not robust enough for a broad range of applications. Here we present X-ray ptychographic topography, a new method for strain imaging, and demonstrate its use on an InSb micro-pillar after micro-compression, where the strained region is visualized with a spatial resolution of 30 nm. Thereby, X-ray ptychographic topography proves itself as a robust non-destructive approach for the imaging of strain fields within bulk crystalline specimens with a spatial resolution of a few tens of nanometers.
{"title":"X-ray ptychographic topography: A robust nondestructive tool for strain imaging","authors":"M. Verezhak, S. Van Petegem, A. Rodriguez-Fernandez, P. Godard, Klaus Wakonig, D. Karpov, V. Jacques, A. Menzel, L. Thilly, A. Diaz","doi":"10.1103/PhysRevB.103.144107","DOIUrl":"https://doi.org/10.1103/PhysRevB.103.144107","url":null,"abstract":"Strain and defects in crystalline materials are responsible for the distinct mechanical, electric and magnetic properties of a desired material, making their study an essential task in material characterization, fabrication and design. Existing techniques for the visualization of strain fields, such as transmission electron microscopy and diffraction, are destructive and limited to thin slices of the materials. On the other hand, non-destructive X-ray imaging methods either have a reduced resolution or are not robust enough for a broad range of applications. Here we present X-ray ptychographic topography, a new method for strain imaging, and demonstrate its use on an InSb micro-pillar after micro-compression, where the strained region is visualized with a spatial resolution of 30 nm. Thereby, X-ray ptychographic topography proves itself as a robust non-destructive approach for the imaging of strain fields within bulk crystalline specimens with a spatial resolution of a few tens of nanometers.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":"19 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78774134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Isogami, K. Masuda, Y. Miura, N. Rajamanickam, Y. Sakuraba
Ferrimagnetic Mn$_4$N is a promising material for heat flux sensors based on the anomalous Nernst effect (ANE) because of its sizable uniaxial magnetic anisotropy ($K_{rm u}$) and low saturation magnetization ($M_{rm s}$). We experimentally and theoretically investigated the ANE and anomalous Hall effect in sputter-deposited Mn$_4$N films. It was revealed that the observed negative anomalous Hall conductivity ($sigma_{xy}$) could be explained by two different coexisting magnetic structures, that is, a dominant magnetic structure with high $K_{rm u}$ contaminated by another structure with negligible $K_{rm u}$ owing to an imperfect degree of order of nitrogen. The observed transverse thermoelectric power ($S_{rm ANE}$) of $+0.5, mu{rm V/K}$ at $300, {rm K}$ gave a transverse thermoelectric coefficient ($alpha_{xy}$) of $+0.34, {rm A/(m cdot K)}$, which was smaller than the value predicted from first-principles calculation. The interpretation for $alpha_{xy}$ based on the first-principles calculations led us to conclude that the realization of single magnetic structure with high $K_{rm u}$ and optimal adjustment of the Fermi level are promising approaches to enhance $S_{rm ANE}$ in Mn$_4$N through the sign reversal of $sigma_{xy}$ and the enlargement of $alpha_{xy}$ up to a theoretical value of $1.77, {rm A/(m cdot K)}$.
{"title":"Anomalous Hall and Nernst effects in ferrimagnetic Mn4N films: Possible interpretations and prospects for enhancement","authors":"S. Isogami, K. Masuda, Y. Miura, N. Rajamanickam, Y. Sakuraba","doi":"10.1063/5.0039569","DOIUrl":"https://doi.org/10.1063/5.0039569","url":null,"abstract":"Ferrimagnetic Mn$_4$N is a promising material for heat flux sensors based on the anomalous Nernst effect (ANE) because of its sizable uniaxial magnetic anisotropy ($K_{rm u}$) and low saturation magnetization ($M_{rm s}$). We experimentally and theoretically investigated the ANE and anomalous Hall effect in sputter-deposited Mn$_4$N films. It was revealed that the observed negative anomalous Hall conductivity ($sigma_{xy}$) could be explained by two different coexisting magnetic structures, that is, a dominant magnetic structure with high $K_{rm u}$ contaminated by another structure with negligible $K_{rm u}$ owing to an imperfect degree of order of nitrogen. The observed transverse thermoelectric power ($S_{rm ANE}$) of $+0.5, mu{rm V/K}$ at $300, {rm K}$ gave a transverse thermoelectric coefficient ($alpha_{xy}$) of $+0.34, {rm A/(m cdot K)}$, which was smaller than the value predicted from first-principles calculation. The interpretation for $alpha_{xy}$ based on the first-principles calculations led us to conclude that the realization of single magnetic structure with high $K_{rm u}$ and optimal adjustment of the Fermi level are promising approaches to enhance $S_{rm ANE}$ in Mn$_4$N through the sign reversal of $sigma_{xy}$ and the enlargement of $alpha_{xy}$ up to a theoretical value of $1.77, {rm A/(m cdot K)}$.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":"12 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90853317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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